CN108573731A - Flash memory device and updating method thereof - Google Patents
Flash memory device and updating method thereof Download PDFInfo
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- CN108573731A CN108573731A CN201710272346.0A CN201710272346A CN108573731A CN 108573731 A CN108573731 A CN 108573731A CN 201710272346 A CN201710272346 A CN 201710272346A CN 108573731 A CN108573731 A CN 108573731A
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- 238000000034 method Methods 0.000 title claims description 30
- 238000010438 heat treatment Methods 0.000 claims abstract description 72
- 238000011017 operating method Methods 0.000 claims description 29
- 238000009413 insulation Methods 0.000 claims description 7
- 238000005538 encapsulation Methods 0.000 claims description 3
- 230000005055 memory storage Effects 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
- G11C16/3495—Circuits or methods to detect or delay wearout of nonvolatile EPROM or EEPROM memory devices, e.g. by counting numbers of erase or reprogram cycles, by using multiple memory areas serially or cyclically
Abstract
A flash memory device includes a first flash memory cell. The first flash memory unit includes a first flash memory chip and a first heating element. The first heating element is disposed at one side of the first flash memory chip and outside the first flash memory chip.
Description
Technical field
The present invention relates to a kind of memory device and its update methods, and more particularly to a kind of flash memory device and its
Update method.
Background technology
Since flash memory has the actions such as the deposit, reading, erasing that can repeatedly carry out data, and the data being stored in exist
The advantages of will not disappearing after power-off, thus have become personal computer and electronic equipment it is widely used one kind it is non-volatile
Memory component.
However, recycling (program/erase cycle, P/ in the program/erase for carrying out certain number to flash memory
E cycle) after, since charge (electronics or hole) can be captured (trap) in the memory unit, flash memory can be reduced
The usable number and service life of reservoir, and then the durability (endurance) of flash memory is greatly reduced.
Invention content
The present invention provides a kind of flash memory device, with preferable durability.
The present invention provides a kind of update method of flash memory device, can significantly promote flash memory device
Durability.
The present invention proposes a kind of flash memory device, including the first flash memory cells.First flash memory list
Member includes the first flash memory chip and the first heating element.First heating element is set to the first flash memory chip
Side, and positioned at the outside of the first flash memory chip.
Described in the embodiment of the present invention, in above-mentioned flash memory device, it may also include the second flash memory
Unit.Second flash memory cells are set to the side of the first flash memory cells, and with the first flash memory cells
It is thermally isolated.Second flash memory cells include the second flash memory chip and the second heating element.Second flash memory
Chip is coupled to the first flash memory chip.Second heating element is set to the side of the second flash memory chip, and position
Outside the second flash memory chip.
Described in the embodiment of the present invention, in above-mentioned flash memory device, it may also include thermal insulation layer.Thermal insulation layer is set
It is placed between the first flash memory cells and the second flash memory cells.
Described in the embodiment of the present invention, in above-mentioned flash memory device, the first flash memory cells and
Two flash memory cells can be separated from each other setting or encapsulation is integral.
Described in the embodiment of the present invention, in above-mentioned flash memory device, the first flash memory chip and
Two flash memory chips can be coupled via controller.
The present invention proposes a kind of update method of flash memory device, includes the following steps.Flash memory dress is provided
It sets.Flash memory device includes the first flash memory cells.First flash memory cells include the first flash memory
Chip and the first heating element.First heating element is set to the side of the first flash memory chip, and is located at the first quick flashing
The outside of memory chip.First operating procedure is carried out to the first flash memory chip.In the operation time of the first operating procedure
Number reaches on program/erase cycle (program/erase cycle, P/E cycle) number of the first flash memory chip
Before limit value, the first heating stepses are carried out by first the first flash memory chip of heating element pair.
Described in the embodiment of the present invention, in the update method of above-mentioned flash memory device, may additionally include into
After the first operating procedure of row and before carrying out the first heating stepses, the first erasing is carried out to the first flash memory chip and is grasped
Make.
Described in the embodiment of the present invention, in the update method of above-mentioned flash memory device, it may also include repetition
Carry out the first operating procedure and the first heating stepses.
Described in the embodiment of the present invention, in the update method of above-mentioned flash memory device, flash memory dress
It sets and may also include the second flash memory cells.Second flash memory cells are set to the one of the first flash memory cells
Side, and be thermally isolated with the first flash memory cells.Second flash memory cells include the second flash memory chip and the
Two heating elements.Second flash memory chip is coupled to the first flash memory chip.Second heating element is set to second
The side of flash memory chip, and outside the second flash memory chip.
Described in the embodiment of the present invention, in the update method of above-mentioned flash memory device, may additionally include into
After the first operating procedure of row and before carrying out the first heating stepses, replicated into the data for being about to the first flash memory chip
To the first copy step of the second flash memory chip.
Described in the embodiment of the present invention, in the update method of above-mentioned flash memory device, it may also include following
Step.Second operating procedure is carried out to the second flash memory chip.It is replicated into the data for being about to the second flash memory chip
To the second copy step of the first flash memory chip.Reach the second flash memory in the number of operations of the second operating procedure
Before the program/erase cycle-index upper limit value of chip, the is carried out by second the second flash memory chip of heating element pair
Two heating stepses.
Described in the embodiment of the present invention, in the update method of above-mentioned flash memory device, may additionally include into
After the second copy step of row and before carrying out the second heating stepses, the second erasing is carried out to the second flash memory chip and is grasped
Make.
Described in the embodiment of the present invention, in the update method of above-mentioned flash memory device, it may also include repetition
The first operating procedure, the first copy step, the first heating stepses, the second operating procedure, the second copy step and second is carried out to add
Hot step, repeat first operating procedure, first copy step, first heating stepses or repeat this second
Operating procedure, second copy step and second heating stepses.
Described in the embodiment of the present invention, in the update method of above-mentioned flash memory device, the first flash
Device chip can be coupled with the second flash memory chip via controller.
Based on above-mentioned, in flash memory device proposed by the invention, it is located at since flash memory cells have
Heating element outside flash memory chip, therefore flash memory chip can be heated by heating element, with clear
Except the charge being captured in the memory unit, and flash memory chip can be updated to the product close to efficiency when manufacture
(fresh device), and then significantly promote the usable number and service life of flash memory device.Thus, fast
Flash memory devices can have preferable durability.
In addition, in the update method of flash memory device proposed by the invention, due in flash memory chip
Number of operations reach flash memory chip program/erase cycle-index upper limit value before, by heating element to quick flashing
Memory chip is heated, therefore can effectively remove the charge being captured in the memory unit, and to flash memory core
Piece is updated, and then can significantly promote the durability of flash memory device.
To make the foregoing features and advantages of the present invention clearer and more comprehensible, special embodiment below, and it is detailed to coordinate attached drawing to make
Carefully it is described as follows.
Description of the drawings
Fig. 1 is the schematic diagram of the flash memory device of one embodiment of the invention.
Fig. 2 is the schematic diagram of the flash memory device of another embodiment of the present invention.
Fig. 3 is the schematic diagram of the flash memory device of another embodiment of the present invention.
Fig. 4 is the flow chart of the update method of the flash memory device of one embodiment of the invention.
Fig. 5 is the flow chart of the update method of the flash memory device of another embodiment of the present invention.
Symbol description
100、200：Flash memory device
102：First flash memory cells
104：First flash memory chip
106：First heating element
202：Second flash memory cells
204：Second flash memory chip
206：Second heating element
207：Controller
208：Conducting wire
210：Thermal insulation layer
S100、S102、S104、S106、S200、S202、S204、S206、S208、S210、S212、S214、S216：Step
Specific implementation mode
Fig. 1 is the schematic diagram of the flash memory device of one embodiment of the invention.
Fig. 1 is please referred to, flash memory device 100 includes the first flash memory cells 102.First flash memory list
Member 102 includes the first flash memory chip 104 and the first heating element 106.First flash memory chip 104 can be used to store up
Deposit data.
First heating element 106 is set to the side of the first flash memory chip 104, and is located at the first flash memory
The outside of chip 104.First heating element 106 can heat the first flash memory chip 104, be trapped in removing
Charge in storage unit.First heating element 106 is, for example, ceramic heating element or metallic heating element.
Based on above-described embodiment it is found that being located at the first flash memory core since the first flash memory cells 102 have
The first heating element 106 outside piece 104, thus can by the first heating element 106 to the first flash memory chip 104 into
First flash memory chip 104 to remove the charge being captured in the memory unit, and can be updated to have and connect by row heating
The product of efficiency when nearly manufacture, and then significantly promote the usable number and service life of flash memory device 100.So
One, flash memory device 100 can have preferable durability.
Fig. 2 is the schematic diagram of the flash memory device of another embodiment of the present invention.
Referring to Fig. 1 and Fig. 2, the difference of the flash memory device 200 of Fig. 2 and the flash memory device 100 of Fig. 1
It is different to be：Flash memory device 200 further includes the second flash memory cells 202.Identical component uses in Fig. 2 and Fig. 1
Simultaneously the description thereof will be omitted for identical symbolic indication.
Second flash memory cells 202 are set to the side of the first flash memory cells 102, and with the first flash memory
Storage unit 102 is thermally isolated.First flash memory cells 102 and the second flash memory cells 202 can be separated from each other setting
Or encapsulation is integral.In this embodiment, the first flash memory cells 102 and the second flash memory cells 202 are with that
It is illustrated for this is separately positioned, and the first flash memory cells 102 can pass through with the second flash memory cells 202
It is separately positioned and be thermally isolated.
Second flash memory cells 202 include the second flash memory chip 204 and the second heating element 206.Second
Flash memory chip 204 is coupled to the first flash memory chip 104.Due to the first flash memory chip 104 and second
Flash memory chip 204 is mutually coupled, therefore can the data of the first flash memory chip 104 be copied to the second flash memory
Memory chip 204, and also the data of the second flash memory chip 204 can be copied to the first flash memory chip 104, with
It is backed up.First flash memory chip 104 and the second flash memory chip 204 can pass through controller 207 and conducting wire 208
It is coupled, but the coupling mode of the first flash memory chip 104 and the second flash memory chip 204 and control mode are simultaneously
It is not limited.
Second heating element 206 is set to the side of the second flash memory chip 204, and is located at the second flash memory
Outside chip 204.Second heating element 206 can heat the second flash memory chip 204, be deposited with removing to be trapped in
Charge in storage unit.Second heating element 206 is, for example, ceramic heating element or metallic heating element.
Based on above-described embodiment it is found that in flash memory device 200, the first heating element 106 and second can be passed through
Heating element 206 respectively heats the first flash memory chip 104 and the second flash memory chip 204, to carry out
Update.Thus, which flash memory device 200 can have preferable durability.
In addition, in flash memory device 200, due to the first flash memory cells 102 and the second flash memory
Unit 202 is thermally isolated from each other, therefore to one in the first flash memory chip 104 and the second flash memory chip 204
When person heats, the case where another one generates data dump because heated can avoid.
Fig. 3 is the schematic diagram of the flash memory device of another embodiment of the present invention.
Referring to Fig. 2 and Fig. 2, the difference of the flash memory device 300 of Fig. 3 and the flash memory device 200 of Fig. 2
It is different to be that mode difference is thermally isolated.Flash memory device 300 further includes thermal insulation layer 210.Thermal insulation layer 210 is set to the first quick flashing
Between memory cell 102 and the second flash memory cells 202, by the first flash memory cells 102 and the second quick flashing
It is thermally isolated between memory cell 202.The material of thermal insulation layer 210 is, for example, ceramic material.In this embodiment, first is fast
It is to be illustrated for stacking setting between flash memory cell 102 and the second flash memory cells 202, but the present invention
It is not limited thereto.In addition, the flash memory device 300 of Fig. 3 in the flash memory device 200 of Fig. 2 other are similar
Component is using identical symbolic indication and the description thereof will be omitted.
Based on above-described embodiment it is found that in flash memory device 300, the first heating element 106 and second can be passed through
Heating element 206 respectively heats the first flash memory chip 104 and the second flash memory chip 204, to carry out
Update.Thus, which flash memory device 200 can have preferable durability.
In addition, in flash memory device 300, due to the first flash memory cells 102 and the second flash memory
Unit 202 is thermally isolated each other, therefore in the first flash memory chip 104 and the second flash memory chip 204
One of when being heated, can avoid the case where another one generates data dump because heated.
Fig. 4 is the flow chart of the update method of the flash memory device of one embodiment of the invention.In this embodiment, soon
Flash memory devices are to illustrate by taking the flash memory device 100 of Fig. 1 as an example, but the present invention is not limited thereto.
Referring to Fig. 4 and Fig. 1, step S100 is carried out, flash memory device 100 is provided.Flash memory device
Material, set-up mode and effect of each component in 100 etc. at large illustrated in the embodiment of above-mentioned Fig. 1, therefore in
This is not repeated to illustrate.
Step S102 is carried out, the first operating procedure is carried out to the first flash memory chip 104.First operating procedure is for example
It is to be programmed operation, erasing operation, read operation or combinations thereof.
Step S104 is optionally carried out, the first erasing operation is carried out to the first flash memory chip 104.Pass through
One erasing operation can first remove the charge in storage unit, subsequently heat, help to the first flash memory chip 104 again
In more completely removing charge.
Carry out step S106, the number of operations of the first operating procedure reach the programming of the first flash memory chip 104/
Before wiping cycle-index upper limit value, the first heating is carried out to the first flash memory chip 104 by the first heating element 106
Step.Thereby, the charge being captured in the memory unit can effectively be removed.In addition, the volume of the first flash memory chip 104
Journey/erasing cycle-index upper limit value need to be depending on product specification.
In addition, after carrying out step S106, above-mentioned steps S102 to step S106 is may be repeated, to repeat more
New processing.
Based on above-described embodiment it is found that due to reaching the first quick flashing in the number of operations of the first flash memory chip 104
Before the program/erase cycle-index upper limit value of memory chip 104, by the first heating element 106 to the first flash
Device chip 104 is heated, therefore can effectively remove the charge being captured in the memory unit, and to the first flash memory
Chip 104 is updated, and then can significantly promote the durability of flash memory device 100.
Fig. 5 is the flow chart of the update method of the flash memory device of another embodiment of the present invention.In this embodiment,
Flash memory device is to illustrate by taking the flash memory device 200 of Fig. 2 as an example, but the present invention is not limited thereto.
The method that Fig. 5 also can be used in the flash memory device 300 of Fig. 3 is updated.
Referring to Fig. 5 and Fig. 2, step S200 is carried out, flash memory device 200 is provided.Flash memory device
Material, set-up mode and effect of each component in 200 etc. at large illustrated in the embodiment of above-mentioned Fig. 1, therefore in
This is not repeated to illustrate.
Step S202 is carried out, the first operating procedure is carried out to the first flash memory chip 104.First operating procedure is for example
It is to be programmed operation, erasing operation, read operation or combinations thereof.
Step S204 is carried out, the second flash memory core is copied into the data for being about to the first flash memory chip 104
First copy step of piece 204.It, can be standby by the data for being stored in the first flash memory chip 104 by the first copy step
Part to the second flash memory chip 204.
Step S206 is optionally carried out, the first erasing operation is carried out to the first flash memory chip 104.Pass through
One erasing operation can first remove the charge in storage unit, subsequently heat, help to the first flash memory chip 104 again
In more completely removing charge.
Carry out step S208, the number of operations of the first operating procedure reach the programming of the first flash memory chip 104/
Before wiping cycle-index upper limit value, the first heating is carried out to the first flash memory chip 104 by the first heating element 106
Step.Thereby, the charge being captured in the memory unit can effectively be removed.In addition, the volume of the first flash memory chip 104
Journey/erasing cycle-index upper limit value need to be depending on product specification.
Step S210 is carried out, the second operating procedure is carried out to the second flash memory chip 204.Second operating procedure is for example
It is to be programmed operation, erasing operation, read operation or combinations thereof.
Step S212 is carried out, the first flash memory core is copied into the data for being about to the second flash memory chip 204
Second copy step of piece 104.It, can be standby by the data for being stored in the second flash memory chip 204 by the second copy step
Part to the first flash memory chip 104.
Step S214 is optionally carried out, the second erasing operation is carried out to the second flash memory chip 204.Pass through
Two erasing operations can first remove the charge in storage unit, subsequently heat, help to the second flash memory chip 204 again
In more completely removing charge.
Carry out step S216, the number of operations of the second operating procedure reach the programming of the second flash memory chip 204/
Before wiping cycle-index upper limit value, the second heating is carried out to the second flash memory chip 204 by the second heating element 206
Step.Thereby, the charge being captured in the memory unit can effectively be removed.In addition, the volume of the second flash memory chip 204
Journey/erasing cycle-index upper limit value need to be depending on product specification.
In addition, after carrying out step S216, above-mentioned steps S202 to step S216 can be repeated according to demand, repeated
It carries out above-mentioned steps S202 to step S208 or repeats above-mentioned steps S210 to step S216, to repeat at update
Reason.
Based on above-described embodiment it is found that due to reaching the first flash memory chip 104 and the second flash memory core
Before the program/erase cycle-index upper limit value of piece 204, respectively to the first flash memory chip 104 and the second flash
Device chip 204 is heated, therefore can effectively remove the charge being captured in the memory unit, and respectively to the first flash memory
Memory chip 104 is updated with the second flash memory chip 204, and then can significantly promote flash memory device 200
Durability.
Further, since the first flash memory chip 104 is mutually coupled with the second flash memory chip 204, therefore can
Data in first flash memory chip 104 are copied into the second flash memory chip 204, and also can be by the second flash memory
Data in memory chip 204 copy to the first flash memory chip 104, to be backed up.
In the above-described embodiments, although flash memory device is for including one or two flash memory cells
It illustrates, but the present invention is not limited thereto.In other embodiments, flash memory device also may include three or more
Flash memory cells, plurality of flash memory cells can be by respective heating element to respective flash memory
Chip is updated.In addition, in the case where flash memory device has multiple flash memory cells, due to multiple quick flashings
Memory chip is coupled to each other, therefore can will be stored in wherein before being updated to one of flash memory chip
Data copy to other flash memory chips.
In conclusion in the flash memory device of above-described embodiment, it is located at soon since flash memory cells have
The heating element of flash memory chip exterior, therefore flash memory chip can be heated by heating element, to remove
The charge being captured in the memory unit, and flash memory chip can be updated to the product close to efficiency when manufacture,
And then significantly promote the usable number and service life of flash memory device.Thus, which flash memory device can
With preferable durability.
In addition, in the update method of the flash memory device of above-described embodiment, due in flash memory chip
Before number of operations reaches the program/erase cycle-index upper limit value of flash memory chip, by heating element to flash memory
Memory chip is heated, therefore can effectively remove the charge being captured in the memory unit, and to flash memory chip
It is updated, and then can significantly promote the durability of flash memory device.
Although the present invention is disclosed as above with embodiment, it is not limited to the present invention, any affiliated technology neck
Technical staff in domain, without departing from the spirit and scope of the present invention, should can make it is a little change and retouch, therefore this hair
Subject to bright protection domain ought be defined depending on appended claims.
Claims (14)
1. a kind of flash memory device, including the first flash memory cells, wherein first flash memory cells include：
First flash memory chip；And
First heating element is set to the side of first flash memory chip, and is located at first flash memory chip
Outside.
2. flash memory device as described in claim 1 further includes the second flash memory cells, it is first fast to be set to this
The side of flash memory cell, and being thermally isolated with first flash memory cells, wherein the second flash memory cells packet
It includes：
Second flash memory chip is coupled to first flash memory chip；And
Second heating element is set to the side of second flash memory chip, and is located at second flash memory chip
It is external.
3. flash memory device as claimed in claim 2 further includes thermal insulation layer, it is set to first flash memory cells
Between second flash memory cells.
4. flash memory device as claimed in claim 2, wherein first flash memory cells and second flash memory
Storage unit is separated from each other setting or encapsulation is integral.
5. flash memory device as claimed in claim 2, wherein first flash memory chip and second flash memory
Memory chip is coupled via controller.
6. a kind of update method of flash memory device, including：
Flash memory device is provided, the wherein flash memory device includes the first flash memory cells, and this is first fast
Flash memory cell includes：
First flash memory chip；And
First heating element is set to the side of first flash memory chip, and is located at first flash memory chip
Outside；
First operating procedure is carried out to first flash memory chip；And
Reach the program/erase cycle-index upper limit of first flash memory chip in the number of operations of first operating procedure
Before value, the first heating stepses are carried out to first flash memory chip by first heating element.
7. the update method of flash memory device as claimed in claim 6, further include carry out first operating procedure it
Afterwards and before carrying out first heating stepses, the first erasing operation is carried out to first flash memory chip.
8. the update method of flash memory device as claimed in claim 6 further includes repeating first operating procedure
With first heating stepses.
9. the update method of flash memory device as claimed in claim 6, the wherein flash memory device further include
Two flash memory cells, second flash memory cells are set to the side of first flash memory cells, and with this
First flash memory cells are thermally isolated, and second flash memory cells include：
Second flash memory chip is coupled to first flash memory chip；And
Second heating element is set to the side of second flash memory chip, and is located at second flash memory chip
It is external.
10. the update method of flash memory device as claimed in claim 9, further include carry out first operating procedure it
Afterwards and before carrying out first heating stepses, second quick flashing is copied into the data for being about to first flash memory chip
First copy step of memory chip.
11. the update method of flash memory device as claimed in claim 10, further includes：
Second operating procedure is carried out to second flash memory chip；
The second copy step of first flash memory chip is copied into the data for being about to second flash memory chip；
And
Reach the program/erase cycle-index upper limit of second flash memory chip in the number of operations of second operating procedure
Before value, the second heating stepses are carried out to second flash memory chip by second heating element.
12. the update method of flash memory device as claimed in claim 11 further includes carrying out second copy step
Later and before carrying out second heating stepses, the second erasing operation is carried out to second flash memory chip.
13. the update method of flash memory device as claimed in claim 11 further includes repeating the first operation step
Suddenly, first copy step, first heating stepses, second operating procedure, second copy step and second heating walk
Suddenly, repeat first operating procedure, first copy step, first heating stepses or repeat second operation
Step, second copy step and second heating stepses.
14. the update method of flash memory device as claimed in claim 9, wherein first flash memory chip with should
Second flash memory chip is coupled via controller.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW106108326A TWI633553B (en) | 2017-03-14 | 2017-03-14 | Flash memory device and refresh method thereof |
| TW106108326 | 2017-03-14 |
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| CN108573731B CN108573731B (en) | 2020-12-18 |
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| TW201833932A (en) | 2018-09-16 |
| TWI633553B (en) | 2018-08-21 |
| CN108573731B (en) | 2020-12-18 |
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