TW201441818A - Flash memory device capable of regulating temperature - Google Patents

Abstract

The invention provides a Flash memory device capable of regulating temperature, including a temperature sensor, a switch module, at least a flash memory element, and a control module wherein the temperature sensor is used for sensing environment temperature. When environment temperature is lower than a floor temperature value or higher than a ceiling temperature value, the control module controls the conduction of the switch module so that an operational power supplier supplies power to a heating fin or a cooling plate through the switch module. The environment temperature of the flash memory device is regulated by heating or cooling the heating fin or the cooling plate, increasing the accuracy of data reading for the flash memory device or avoiding possibility of high temperature damage for device elements from being destroyed by high temperature.

Description

Adjustable temperature flash memory device

The invention relates to a temperature-adjustable flash memory device for adjusting the ambient temperature of a flash memory device.

The rapid development of semiconductor process technology has made the memory capacity of flash memory devices relatively higher, and has been widely used in data backup.

For flash memory devices, temperature changes often affect the reading of data. For example, if the flash memory device operates below a critical temperature (eg, 0 ° C), the data read error will increase relatively, making it easier to read more erroneous data. Here, in order to read the correct data from the flash memory device at extreme temperatures, the error correction codes (ECC) can only be used to ensure the correctness of the data. Therefore, the ECC code must be relatively increased. The length, which is very disadvantageous for the production cost of the flash memory device.

An object of the present invention is to provide a temperature-adjustable flash memory device, wherein a temperature sensor and a heater chip are provided in the device, when the temperature sensor detects that the ambient temperature is lower than a lower limit temperature value. The flash memory device will control the heating sheet with a periodic pulse signal or a single level signal to heat the ambient temperature, and prevent the flash memory device from operating in a low temperature environment, which may cause damage to the device components. Or accelerate aging and ensure the correct reading and writing of data in low temperature environments.

An object of the present invention is to provide a temperature-adjustable flash memory device, wherein a temperature sensor and a uniform cold chip are provided in the device, when the temperature sensor detects that the ambient temperature is higher than an upper limit temperature value. The flash memory device will control the cooling of the cooling plate by a periodic pulse signal or by a single level signal to cool the ambient temperature, and avoid the operation of the flash memory device in a high temperature environment. Damage or accelerate aging and ensure correct reading and writing of data in high temperature environments. In order to achieve the above object, the present invention provides a temperature-adjustable flash memory device comprising: a temperature sensor for sensing an ambient temperature; and a heater chip disposed on at least one of the flash memory components a switch module disposed between a working power supply and a heating sheet; and a control module connected to the temperature sensor and the switch module, wherein the control module controls when the ambient temperature is lower than a first lower limit temperature value The switch module is turned on to supply the working power to the heater chip via the switch module.

In an embodiment of the invention, when the ambient temperature is higher than a second lower limit temperature value, the control module controls the switch module to be turned off, so that the working power supply stops supplying power to the heating sheet.

In an embodiment of the invention, the second lower limit temperature value is set to be higher than the first lower limit temperature value.

The invention further provides a temperature-adjustable flash memory device, comprising: a temperature sensor for sensing an ambient temperature; a uniform cold chip disposed on at least one of the flash memory components; and a switch module And a control module is connected between the temperature sensor and the switch module. When the ambient temperature is higher than a first upper limit temperature, the control module controls the switch module to be turned on. So that the working power is supplied to the cooling piece via the switch module.

In an embodiment of the invention, when the ambient temperature is lower than a second upper limit temperature value, the control module controls the switch module to be turned off, so that the working power supply stops supplying power to the cooling plate.

In an embodiment of the invention, the second upper limit temperature value is set to be lower than the first upper limit temperature value.

In an embodiment of the invention, the control module is a microcontroller or a control circuit.

In one embodiment of the invention, the cooling fins are disposed over all of the components of the flash memory device.

In an embodiment of the invention, the control module controls the on or off of the switch module by using a periodic pulse signal or a single level voltage signal.

100. . . Flash memory device

101. . . Flash memory device

102. . . Flash memory device

103. . . Flash memory device

10. . . Pulse signal

11. . . Control module

111. . . First lower limit temperature value

112. . . Second lower limit temperature value

113. . . First upper limit temperature value

114. . . Second upper limit temperature value

12. . . Temperature sensor

130. . . Switch module

131. . . Switch module

1310. . . Transistor switching element

1311. . . Resistor

1312. . . Capacitor

1313. . . First node

15. . . Heating sheet

16. . . Cooling film

17. . . Flash memory component

Figure 1 is a block diagram showing a preferred embodiment of a flash memory device of the present invention.
Fig. 2 is a schematic view showing the structure of still another embodiment of the flash memory device of the present invention.
Figure 3 is a block diagram showing another embodiment of the flash memory device of the present invention.
Figure 4 is a block diagram showing another embodiment of the flash memory device of the present invention.

Please refer to FIG. 1 , which is a schematic structural diagram of a flash memory device according to a preferred embodiment of the present invention. As shown, the flash memory device 100 includes a control module 11, a temperature sensor 12, a switch module 130, a heater chip 15, and a plurality of flash memory components 17.

The switch module 130 according to an embodiment of the present invention may be a transistor switching component, such as a BJT or MOS transistor, and an input terminal (such as a collector terminal) is connected to a working power supply (VCC), and the control terminal (such as a base terminal) The control module 11 is connected, and the output end (such as the emitter end) is connected to the heating piece 15. The control module 11 is configured to receive a pulse signal 10, one end of which is connected to the switch module 130, and the other end of which is connected to the temperature sensor 12. The heater chip 15 is disposed on the flash memory component 17 or disposed on all components of the flash memory device 100.

In this embodiment, the control module 11 is configured with a first lower limit temperature value 111 (for example, 0 ° C), and the control module 11 will sense the ambient temperature through the temperature sensor 12 . When the temperature sensor 12 senses that the ambient temperature is lower than the first lower limit temperature value 111, the control module 11 directly controls whether the switch module 130 is turned on or off by using the periodic pulse wave signal 10 of a certain frequency. Next, the operating power supply (VCC) is supplied to the heater chip 15 via the turned-on switch module 130 to cause the heater chip 15 to start operating. The heating sheet 15 in operation will heat the environment so that the ambient temperature can be raised. Then, the flash memory device 100 will be able to avoid operating in a low temperature environment to reduce the probability of data reading errors.

In this embodiment, the control module 11 is further configured with a second lower limit temperature value 112 (eg, 30 ° C), and the second lower limit temperature value 112 is set to be higher than the first lower limit temperature value 111. When the heating sheet 15 is heated and raised to make the ambient temperature exceed the second lower limit temperature value 112, the control module 11 controls the switch module 130 to be turned off, and the operating power source (VCC) will not be able to supply power to the heating sheet 15 to make the heating sheet 15 Stop the heating action.

Please refer to FIG. 2 , which is a structural diagram of still another embodiment of the flash memory device of the present invention. As shown in the figure, the switch module 131 of the flash memory device 101 of the present embodiment can be a switch circuit including a transistor switching element 1310, a resistor 1311 and a capacitor 1312. The input end of the transistor switching element 1310 is connected to the working voltage (VCC), and the output end is connected to the heating piece 15. The control end is connected to one end of the resistor 1311 and one end of the capacitor 1312 to a first node 1313. The resistor 1311 The other end is connected to the control module 11, and the first node 1313 will generate a voltage signal V1.

In an embodiment of the invention, the control module 11 senses the temperature change of the environment through the temperature sensor 12, and selects a Pulse Density Modulation (PDM) modulation pulse signal 10 according to the temperature change. The pulse wave density (that is, the frequency of the pulse wave is changed), so that the level of the voltage signal V1 can be relatively adjusted following the modulation of the pulse wave density.

For example, when the temperature sensor 12 senses that the ambient temperature is at a lower condition, the control module 11 will relatively modulate a higher frequency pulse signal 10. The higher frequency pulse signal 10 will generate a higher level DC voltage signal V1 on the first node 1313. Thereafter, using the higher level DC voltage signal V1 to drive the transistor switching element 1310 to conduct, the heater chip 15 will provide a higher operating temperature to heat the ambient temperature. Conversely, when the temperature sensor 12 senses that the ambient temperature is at a higher condition, the control module 11 will modulate a lower frequency pulse signal 10. The lower frequency pulse signal 10 will generate a lower level DC voltage signal V1 on the first node 1313. Thereafter, the lower-level DC voltage signal V1 may not be able to drive the transistor switching element 1310 to conduct, and the heating sheet 15 may stop heating.

Alternatively, in another embodiment of the present invention, the control module 11 senses the temperature change of the environment through the temperature sensor 12, and selects a Pulse Width Modulation (PWM) modulation pulse according to the temperature change. The pulse width of the wave signal 10 (that is, the duty cycle of the pulse wave is changed), so that the level of the voltage signal V1 can be relatively adjusted following the modulation of the pulse width.

For example, when the temperature sensor 12 senses that the ambient temperature is at a lower condition, the control module 11 will be relatively modified to have a wider duty cycle (for example, a Duty Cycle). Pulse time signal 10 of operation time). The pulse signal 10 of the wider duty cycle will generate a higher level DC voltage signal V1 on the first node 1313. Thereafter, using the higher level DC voltage signal V1 to drive the transistor switching element 1310 to conduct, the heater chip 15 will provide a higher operating temperature to heat the ambient temperature. Conversely, when the temperature sensor 12 senses that the ambient temperature is at a higher condition, the control module 11 will modulate a pulse signal 10 having a narrow duty cycle. The lower frequency pulse signal 10 will generate a lower level DC voltage signal V1 on the first node 1313. Thereafter, the lower-level DC voltage signal V1 may not be able to drive the transistor switching element 1310 to conduct, and the heating sheet 15 may stop heating.

According to the above method, when the environment is at a relatively low temperature, the flash memory device 100/101 can control the heating sheet 15 to perform a heating process to raise the ambient temperature to avoid the flash memory device 100/ The operation of 101 in a low temperature environment is likely to cause damage or accelerated aging of the device components and ensure correct reading and writing of data in a low temperature environment.

Please refer to FIG. 3 , which is a schematic structural diagram of still another embodiment of the flash memory device of the present invention. As shown in the figure, the circuit structure of the flash memory device 102 of the present embodiment is similar to that of the flash memory device 100 of the above embodiment, and the difference between the two is only that a heating is provided in the flash memory device 100 of the above embodiment. The sheet 15 is heated by a heating sheet 152 for a low temperature environment. In the flash memory device 102 of the present embodiment, a uniform cold sheet 16 is disposed, and the cooling sheet 16 is used to perform a cooling process for a high temperature environment. .

In this embodiment, the output end of the switch module 130 is connected to the uniform cold plate 16, and the cooling plate 16 is disposed on the flash memory component 17 or further disposed on all components of the flash memory device 102. Moreover, the control module 11 is set to have a first upper limit temperature value 113 (for example, 90 ° C).

When the temperature sensor 12 senses that the ambient temperature is higher than the first upper limit temperature value 113, the control module 11 directly controls whether the switch module 130 is turned on or off by using the periodic pulse wave signal 10 of a certain frequency. Next, the operating power supply (VCC) is supplied to the cooling fins 16 via the turned-on switching module 130 to cause the cooling fins 16 to start operating. The working cooling fins 16 will cool the environment so that the ambient temperature can be lowered, so as to avoid the possibility that the flash memory device 102 operates in a high temperature environment, which may cause damage to the device components or the probability of data reading errors. .

In this embodiment, the control module 11 is further configured with a second upper limit temperature value 114 (for example, 50 ° C), and the second upper limit temperature value 114 is set lower than the first upper limit temperature value 113. When the cooling plate 16 is cooled and cooled to make the ambient temperature lower than the second upper limit temperature value 114, the control module 11 controls the switch module 130 to be turned off, and the operating power supply (VCC) will not be able to supply power to the cooling fins 16 so that The action of the cooling sheet 16 to stop cooling.

Please refer to FIG. 4 , which is a structural diagram of still another embodiment of the flash memory device of the present invention. As shown in the figure, the switch module 131 of the flash memory device 103 of the present embodiment can be a switch circuit including a transistor switching element 1310, a resistor 1311 and a capacitor 1312. The input end of the transistor switching element 1310 is connected to the working voltage (VCC), the output end is connected to the cooling fin 16, and the control end is connected to one end of the resistor 1311 and one end of the capacitor 1312 to a first node 1313. The resistor 1311 The other end is connected to the control module 11, and the first node 1313 will generate a voltage signal V1.

In an embodiment of the invention, the control module 11 senses the temperature change of the environment through the temperature sensor 12, and selects a Pulse Density Modulation (PDM) modulation pulse signal 10 according to the temperature change. The pulse wave density (that is, the frequency of the pulse wave is changed), so that the level of the voltage signal V1 can be relatively adjusted following the modulation of the pulse wave density.

For example, when the temperature sensor 12 senses that the ambient temperature is at a higher condition, the control module 11 will relatively modulate a pulse signal 10 having a higher frequency. The higher frequency pulse signal 10 will generate a higher level DC voltage signal V1 on the first node 1313. Thereafter, the transistor switching element 1310 is driven to conduct using the higher level DC voltage signal V1, and the fins 16 will provide a lower operating temperature to cool the ambient temperature. Conversely, when the temperature sensor 12 senses that the ambient temperature is at a higher condition, the control module 11 will modulate a lower frequency pulse signal 10. The lower frequency pulse signal 10 will generate a lower level DC voltage signal V1 on the first node 1313. Thereafter, the DC voltage signal V1 of the lower level may not be able to drive the transistor switching element 1310 to conduct, and the cooling sheet 16 stops the cooling operation.

Alternatively, in another embodiment of the present invention, the control module 11 senses the temperature change of the environment through the temperature sensor 12, and selects a Pulse Width Modulation (PWM) modulation pulse according to the temperature change. The pulse width of the wave signal 10 (that is, the duty cycle of the pulse wave is changed), so that the level of the voltage signal V1 can be relatively adjusted following the modulation of the pulse width.

For example, when the temperature sensor 12 senses that the ambient temperature is at a higher condition, the control module 11 will modulate a pulse signal 10 having a wider duty cycle. The pulse signal 10 of the wider duty cycle will generate a higher level DC voltage signal V1 on the first node 1313. Thereafter, the transistor switching element 1310 is driven to conduct with a higher level of the DC voltage signal V1, and the heater chip 15 will provide a higher operating temperature to heat the ambient temperature. Conversely, when the temperature sensor 12 senses that the ambient temperature is at a higher condition, the control module 11 will modulate a pulse signal 10 having a narrow duty cycle. The lower frequency pulse signal 10 will generate a lower level DC voltage signal V1 on the first node 1313. Thereafter, the lower-level DC voltage signal V1 may not be able to drive the transistor switching element 1310 to conduct, and the heating sheet 15 may stop heating.

As described above, when the environment is at a relatively high temperature, the flash memory device 102/103 can control the cooling sheet 16 to perform a cooling process to cool the ambient temperature to avoid the flash memory device 102. /103 Operating in a high temperature environment is likely to cause damage or accelerated aging of the device components and ensure correct reading and writing of data in high temperature environments.

As described above, the heater chip 15 and the cooling fin 16 of the present invention are respectively disposed in a respective separate flash memory device 100, 101, 102, 103. However, in practical application design, the heating sheet 15 and the cooling sheet 16 may also be selected as a combined component and disposed in a single flash memory device 100/101/102/103 to enable the flash memory device. 100/101/102/103 has the effect of heating and cooling, so that the flash memory device 100/101/102/103 can operate in a predetermined temperature range, and the flash memory device 100/101/102/103 is added. The stability of reading and writing.

The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, which is equivalent to the changes in shape, structure, features and spirit of the present invention. Modifications are intended to be included in the scope of the patent application of the present invention.

100. . . Flash memory device

10. . . Pulse signal

11. . . Control module

111. . . First lower limit temperature value

112. . . Second lower limit temperature value

12. . . Temperature sensor

130. . . Switch module

15. . . Heating sheet

17. . . Flash memory component

Claims (12)

A temperature-adjustable flash memory device includes: a temperature sensor for sensing an ambient temperature; a heater chip disposed on at least one of the flash memory components; and a switch module disposed in the Between the working power source and the heating sheet; and a control module, connected to the temperature sensor and the switch module, when the ambient temperature is lower than a first lower limit temperature value, the control module controls the switch module to be turned on, so that the working power source Power is supplied to the heater chip via the switch module. The flash memory device of claim 1, wherein the control module controls the switch module to be turned off when the ambient temperature is higher than a second lower limit temperature value, so that the working power supply stops supplying power to the Heat the sheet. The flash memory device of claim 2, wherein the second lower limit temperature value is set to be higher than the first lower limit temperature value. The flash memory device of claim 1, wherein the control module is a microcontroller or a control circuit. The flash memory device of claim 1, wherein the heater chip is disposed on all components of the flash memory device. The flash memory device of claim 1, wherein the control module controls the turn-on or turn-off of the switch module by using a periodic pulse signal or a single level voltage signal. A temperature-adjustable flash memory device includes: a temperature sensor for sensing an ambient temperature; a uniform cold chip disposed on at least one of the flash memory components; and a switch module disposed in the Between the working power source and the cooling piece; and a control module, connected to the temperature sensor and the switch module, when the ambient temperature is higher than a first upper limit temperature value, the control module controls the switch module to be turned on to make the work The power is supplied to the cooling fin via the switch module. The flash memory device of claim 7, wherein the control module controls the switch module to be turned off when the ambient temperature is lower than a second upper limit temperature, so that the working power supply stops supplying power to the Cooling film. The flash memory device of claim 8, wherein the second upper limit temperature value is set lower than the first upper limit temperature value. The flash memory device of claim 7, wherein the control module is a microcontroller or a control circuit. The flash memory device of claim 7, wherein the refrigerating sheet is disposed on all components of the flash memory device. The flash memory device of claim 7, wherein the control module controls the turn-on or turn-off of the switch module by using a periodic pulse signal or a single level voltage signal.