CN102109863B - Temperature control circuit - Google Patents

Temperature control circuit Download PDF

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Publication number
CN102109863B
CN102109863B CN200910312445.2A CN200910312445A CN102109863B CN 102109863 B CN102109863 B CN 102109863B CN 200910312445 A CN200910312445 A CN 200910312445A CN 102109863 B CN102109863 B CN 102109863B
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China
Prior art keywords
temperature
electronic switch
microprocessor
signal
electronic equipment
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Expired - Fee Related
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CN200910312445.2A
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Chinese (zh)
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CN102109863A (en
Inventor
谢明志
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Beijing Zhongcai Wyse Education Technology Co ltd
State Grid Corp of China SGCC
Xinyang Power Supply Co of State Grid Henan Electric Power Co Ltd
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Priority to CN200910312445.2A priority Critical patent/CN102109863B/en
Publication of CN102109863A publication Critical patent/CN102109863A/en
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Abstract

The invention discloses a temperature control circuit, which comprises a microprocessor, a circuit protection module, a heating module and a temperature detection module, wherein the temperature detection module is used for detecting the internal temperature of electronic equipment and outputting a detection signal to the microprocessor and the circuit protection module; the circuit protection module is used for receiving the detection signal and a locking signal from the microprocessor and outputting a reset signal to the microprocessor according to the detection signal and the locking signal, so that the microprocessor is in a reset state all the time before the internal temperature of the electronic equipment reaches a preset operating temperature; and the microprocessor is used for outputting a heating signal to the heating module according to the detection signal and the reset signal, so that the heating module starts heating to raise the internal temperature of the electronic equipment. By the temperature control circuit, the electronic equipment can be normally started in a low-temperature environment and can keep the normal operation after being started.

Description

Temperature-control circuit
Technical field
The present invention relates to a kind of temperature-control circuit.
Background technology
Most of elements of existing electronic equipment are all could normally to work in the environment of 0-70 ℃, and this causes electronic equipment cannot to start or normally work in the environment of low temperature.
Summary of the invention
In view of above content, be necessary to provide a kind of temperature-control circuit that makes electronic equipment normal operation in low temperature environment.
A temperature-control circuit, comprising:
One microprocessor;
One circuit protection module;
One heating module; And
One temperature detecting module, for detecting the internal temperature of electronic equipment and exporting a detection signal to described microprocessor and described circuit protection module, described circuit protection module receive described detection signal and a locking signal from described microprocessor and according to detection signal and described locking signal export a reset signal to described microprocessor make described microprocessor before the internal temperature of described electronic equipment reaches a default working temperature always in reset mode, described heating module before the internal temperature of described electronic equipment reaches default working temperature always in heated condition, when the internal temperature of described electronic equipment reaches default working temperature, described microprocessor starts and then described electronic equipment is started, and described heating module stops heating, after described electronic equipment starts, described microprocessor is exported a heating signal during lower than default working temperature and to described heating module, is made the internal temperature of its described electronic equipment that heats to raise at the internal temperature of described electronic equipment according to described detection signal and reset signal.
Temperature-control circuit of the present invention by described thermistor control described circuit protection module before the internal temperature of described electronic equipment reaches described working temperature always described in the reset enable signal of output low level microprocessor in reset mode, control described electronic equipment always and cannot start shooting, and after the correct start of described electronic equipment, by described microprocessor, described circuit protection module is locked the reset signal that makes its control that is not subject to described temperature detecting module continue output low level, simultaneously described microprocessor is controlled described in described heating module heating and stops heating according to described detection signal and reset signal, make the described electronic equipment can normal boot-strap in low temperature environment, and after start, keep normal work.
Accompanying drawing explanation
In conjunction with embodiment, the invention will be further described with reference to the accompanying drawings.
Fig. 1 is the circuit diagram of the better embodiment of temperature-control circuit of the present invention.
Main element symbol description
Temperature-control circuit 20
Temperature detecting module 22
Circuit protection module 24
Heating module 26
Resistance R 1-R6
Triode Q1
Field effect transistor Q2-Q4
Thermistor NTC
Microprocessor U1
Well heater U2
Diode D
Keyswitch SW1
Capacitor C
Power Vcc
Embodiment
Please refer to Fig. 1, temperature-control circuit 20 of the present invention can make an electronic equipment normally operation in low temperature environment, and described temperature-control circuit 20 is installed in described electronic equipment.The better embodiment of described temperature-control circuit 20 comprises a microprocessor U1, a temperature detecting module 22, a circuit protection module 24 and a heating module 26.Described microprocessor U1 is also a part for other functional circuits of described electronic equipment simultaneously, when described microprocessor U1 normally starts, described electronic equipment could normally move, for example microprocessor U1 is the CPU of a computer system, described microprocessor U1 is both for controlling described temperature-control circuit 20, also for controlling north and south bridge, only have after the normal startup of described microprocessor U1, computer system could normal boot-strap simultaneously.
Described temperature detecting module 22 comprises thermistor NTC and a triode Q1 of a negative temperature coefficient.The base stage of described triode Q1 is connected to a power Vcc by a resistance R 1, after described thermistor NTC is in parallel with a resistance R 2, is serially connected between the base stage and ground of described triode Q1.The grounded emitter of described triode Q1, the signal input pin IN that the collector of described triode Q1 is connected to described microprocessor U1 is connected to described power Vcc by a resistance R 3 simultaneously, is also connected to described circuit protection module 24.
Described circuit protection module 24 comprises metal oxide semiconductor field effect tube (the Metal Oxide Semiconductor Field Effect Transistor of two N channel enhancement, MOSFET) Q2, Q3 and a keyswitch SW1, the grid of described field effect transistor Q2 is connected to the collector of described triode Q1, the source ground of described field effect transistor Q2, the drain electrode of described field effect transistor Q2 is connected to the grid of described field effect transistor Q3 and a data pin LCH of described microprocessor U1, the grid of described field effect transistor Q3 is also connected to described power Vcc by a resistance R 4, the source ground of described field effect transistor Q3, the drain electrode of described field effect transistor Q3 is connected to the reset pin RST of described microprocessor U1, one capacitor C is in parallel with described keyswitch SW1 to be serially connected between described reset pin RST and ground, one diode D is in parallel with a resistance R 5 to be serially connected between described reset pin RST and described power Vcc, the negative electrode of described diode D is connected to described power Vcc, described diode D is for the protection of described field effect transistor Q3.
Described heating module 26 comprises a well heater U2 and a field effect transistor Q4.The grid of described field effect transistor Q4 is connected to the signal output pin OUT of described microprocessor U1, is connected to described power Vcc by a resistance R 6 simultaneously.The source ground of described field effect transistor Q4, the drain electrode of described field effect transistor Q4 is connected to the negative supply input end of described well heater U2.The positive supply input end of described well heater U2 is connected to described power Vcc.
Described well heater U2 is a positive temperature coefficient heater, can in low temperature environment, work.Described field effect transistor Q2-Q4 is also the transistor that can work in low temperature environment, and its model can be FDD8447, and its temperature range is-55~150 ℃.
Below the principle of work of temperature-control circuit 20 of the present invention is described.
First, can control described electronic equipment by the power switch on described electronic equipment powers on, after described electronic equipment powers on, just started the internal temperature of described electronic equipment when a working temperature (as 10 ℃) is following, described microprocessor U1 does not work, the data pin LCH of described microprocessor U1 is drawn in described resistance R 4 as high level, described signal output pin OUT are drawn as high level in described resistance R 6, and described data pin LCH and signal output pin OUT export respectively the locking signal of a high level and the heating signal of a high level.Described field effect transistor Q4 conducting, described well heater U2 starts heating, and the internal temperature of described electronic equipment raises gradually.The resistance of described thermistor NTC reduces along with the rising of the internal temperature of described electronic equipment, ratio between the resistance that described thermistor NTC is in parallel with described resistance R 2 and the resistance of described resistance R 1 reduces gradually, and the pressure drop at the two ends of described thermistor NTC reduces gradually.
Before the internal temperature of described electronic equipment reaches described default working temperature, the pressure drop at the two ends of described thermistor NTC is enough to make described triode Q1 conducting, the collector of described triode Q1 is exported a low level detection signal to the grid of described field effect transistor Q2, described field effect transistor Q2 cut-off, because the locking signal of the data pin LCH output of described microprocessor U1 is now high level, so the drain electrode of field effect transistor Q2 is also high level, described field effect transistor Q3 conducting, the reset signal of the drain electrode output low level of described field effect transistor Q3 is given the reset pin RST of described microprocessor U1, described microprocessor U1 is always in reset mode.
When the internal temperature of described electronic equipment reaches described working temperature, the pressure drop at described thermistor NTC two ends reduces makes described triode Q1 cut-off, the collector of described triode Q1 is exported the detection signal of a high level, described field effect transistor Q2 conducting, the drain electrode output low level of described field effect transistor Q2 is given the grid of described field effect transistor Q3, described field effect transistor Q3 cut-off, the drain electrode output high level of described field effect transistor Q3, described microprocessor U1 stops resetting and correct startup, the locking signal of the data pin LCH output of described microprocessor U1 all becomes low level, the grid that is described field effect transistor Q3 is locked into low level, now, described field effect transistor Q3 is in cut-off state, the homing action of described microprocessor U1 is controlled by described keyswitch SW1 only, the level that described microprocessor U1 detects described signal input pin IN is high level, the heating signal of described signal output pin OUT output is become to low level, described field effect transistor Q4 cut-off, and described well heater U2 stops heating.After described microprocessor U1 starts, described electronic equipment starts working, and the internal component of described electronic equipment also starts heating.
At described well heater U2, stop after heating, if the heat that the electronic component in a default time t on described electronic equipment produces is identical with described electronic equipment dispersed heat, the temperature of described electronic equipment remains unchanged, and described well heater U2 is in idle state; If the heat that the electronic component in described default time t on described electronic equipment produces is less than described electronic equipment dispersed heat, the temperature of described electronic equipment will reduce gradually.
When the internal temperature of described electronic equipment is during again lower than described default working temperature, the ratio of the resistance after described thermistor NTC is in parallel with described resistance R 2 and the resistance of this resistance R 1 will increase, after this thermistor NTC is in parallel with described resistance R 2, the dividing potential drop of gained increases to and is enough to described triode Q1 conducting, it is low level that described microprocessor U1 detects described signal input pin IN, the signal output pin OUT of described microprocessor U1 is become to high level, described field effect transistor Q4 conducting, described well heater U2 starts again heating, the internal temperature bottom out of described electronic equipment, until the internal temperature of described electronic equipment is higher than described default working temperature, the dividing potential drop obtaining after described thermistor NTC is in parallel with described resistance R 2 is reduced to and cannot makes described triode Q1 conducting, the level that described microprocessor U1 detects described signal input pin IN is high level, the heating signal of described signal output pin OUT output is become to low level, described field effect transistor Q4 cut-off, described well heater U2 stops again heating.So repeatedly, make described microprocessor U1 after correct startup, keep normal work, thereby make described electronic equipment after correct startup, keep normal work.
Temperature-control circuit 20 of the present invention heats described electronic equipment before the correct start of described electronic equipment by described well heater U2, and by described thermistor NTC control described circuit protection module 24 before the internal temperature of described electronic equipment reaches described default working temperature always described in the reset enable signal of output low level microprocessor U1 cannot normally start, control described electronic equipment and cannot correctly start shooting; When the internal temperature of described electronic equipment reaches described default working temperature, circuit protection module 24 stops microprocessor U1 described in the reset enable signal of output low level and stops resetting and normal startup, controls described electronic equipment and correctly starts shooting; After the correct start of described electronic equipment; by the described low level locking signal of described microprocessor U1 output, described circuit protection module 24 is locked and makes its control that is not subject to described thermistor NTC and the reset signal of output low level; described microprocessor U1 controls described well heater U2 heating and stops heating according to the height of the level of described signal input pin IN simultaneously; make the described electronic equipment can normal boot-strap in low temperature environment, and after start, keep normal work.

Claims (7)

1. a temperature-control circuit, comprising:
One microprocessor;
One circuit protection module;
One heating module; And
One temperature detecting module, for detecting the internal temperature of electronic equipment and exporting a detection signal to described microprocessor and described circuit protection module, described circuit protection module receive described detection signal and a locking signal from described microprocessor and according to detection signal and described locking signal export a reset signal to described microprocessor make described microprocessor before the internal temperature of described electronic equipment reaches a default working temperature always in reset mode, described heating module before the internal temperature of described electronic equipment reaches default working temperature always in heated condition, when the internal temperature of described electronic equipment reaches default working temperature, described microprocessor starts and then described electronic equipment is started, and described heating module stops heating, after described electronic equipment starts, described microprocessor is exported a heating signal during lower than default working temperature and to described heating module, is made the internal temperature of its described electronic equipment that heats to raise at the internal temperature of described electronic equipment according to described detection signal and reset signal.
2. temperature-control circuit as claimed in claim 1, it is characterized in that: described temperature detecting module comprises thermistor and one first electronic switch of a negative temperature coefficient, the first end of described the first electronic switch is connected to a power supply by one first resistance, after described thermistor is in parallel with one second resistance, be serially connected between the first end and ground of described the first electronic switch, the second end ground connection of described the first electronic switch, the signal input pin that the 3rd end of described the first electronic switch is connected to described microprocessor is connected to described power supply by one the 3rd resistance simultaneously, the 3rd end of described the first electronic switch is used for exporting described detection signal, when the first end of described the first electronic switch is high level, the second end of described the first electronic switch and the 3rd end conducting.
3. temperature-control circuit as claimed in claim 2, it is characterized in that: described circuit protection module comprises one second electronic switch, one the 3rd electronic switch and a keyswitch, the first end of described the second electronic switch is connected to the 3rd end of described the first electronic switch, the second end ground connection of described the second electronic switch, the 3rd end of described the second electronic switch is connected to described the 3rd first end of electronic switch and the data pin of described microprocessor, the first end of described the 3rd electronic switch is also connected to described power supply by one the 4th resistance, the second end ground connection of described the 3rd electronic switch, the 3rd end of described the 3rd electronic switch is connected to the reset pin of described microprocessor, one electric capacity is in parallel with described keyswitch to be serially connected between described reset pin and ground, one the 5th resistance is serially connected between described reset pin and described power supply, the first end of described the second electronic switch is used for receiving described detection signal, the first end of described the 3rd electronic switch is used for receiving described locking signal, the 3rd end of described the 3rd electronic switch is used for exporting described reset signal, described first and second electronic switch is all its second end and the 3rd end conductings when its first end is high level.
4. temperature-control circuit as claimed in claim 3, it is characterized in that: described heating module comprises a well heater and a quadrielectron switch, the signal output pin that the first end of described quadrielectron switch is connected to described microprocessor is connected to a power supply by one the 6th resistance simultaneously, the second end ground connection of described quadrielectron switch, the 3rd end of described quadrielectron switch is connected to the first power input of described well heater, the second source input end of described well heater is connected to described power supply, the first end of described quadrielectron switch is used for receiving described heating signal, when the first end of described quadrielectron switch is high level, second and third end conducting of described quadrielectron switch.
5. temperature-control circuit as claimed in claim 4, it is characterized in that: the signal input pin of described microprocessor is used for receiving described detection signal, described reset pin is used for exporting described reset signal, described data pin is used for exporting described locking signal, and described signal output pin is used for exporting described heating signal.
6. temperature-control circuit as claimed in claim 5, is characterized in that: described circuit protection module also comprises a diode, and the anode of described diode is connected with the reset pin of described microprocessor, and the negative electrode of described diode is connected with described power supply.
7. temperature-control circuit as claimed in claim 6, it is characterized in that: the first electronic switch is a triode, the first to the 3rd end of described the first electronic switch is respectively base stage, emitter and the collector of triode, described second to quadrielectron switch be the N channel field-effect pipe of three enhancement mode, the first to the 3rd end of described the second electronic switch is respectively grid, source electrode and the drain electrode of field effect transistor.
CN200910312445.2A 2009-12-28 2009-12-28 Temperature control circuit Expired - Fee Related CN102109863B (en)

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Application Number Priority Date Filing Date Title
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CN102109863B true CN102109863B (en) 2014-04-30

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CN104597942A (en) * 2013-10-31 2015-05-06 鸿富锦精密工业(深圳)有限公司 Temperature control circuit
CN108574265A (en) * 2017-03-13 2018-09-25 鸿富锦精密工业(深圳)有限公司 Temperature protection circuit
CN107291122A (en) * 2017-07-31 2017-10-24 南京理工大学 Frigid zone target range Intersection Measuring System temperature control modules
CN107360501B (en) * 2017-08-24 2024-02-13 东莞精恒电子有限公司 Pulse width modulation 350W+65W power amplifier module
CN109393700A (en) * 2018-11-22 2019-03-01 秦杨钧 Heat-preservation hamper
CN112399649B (en) * 2019-08-15 2023-12-26 北京小米移动软件有限公司 Heating control circuit and terminal equipment
CN110806765B (en) * 2019-11-07 2021-06-15 国电联合动力技术(保定)有限公司 Low-temperature starting protection device for control system of wind generating set
CN110839305B (en) * 2019-12-04 2022-07-19 上海闻泰信息技术有限公司 Temperature control circuit and method
CN114281124B (en) * 2021-11-23 2023-05-26 盛景智能科技(嘉兴)有限公司 Heating control circuit, heating control method and working machine for vehicle-mounted electronic equipment
CN114035667B (en) * 2021-11-23 2024-11-01 深圳市华图测控系统有限公司 Portable paperless recorder
CN115436549B (en) * 2022-09-16 2023-06-06 华电智控(北京)技术有限公司 Protection device and method for chromatograph temperature control

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5183039A (en) * 1991-08-23 1993-02-02 Baxter International Inc. Temperature control device for fluid filled pad
US6928379B2 (en) * 2002-06-21 2005-08-09 Emerson Electric Co. Apparatus and method for sensing temperature
CN101097472A (en) * 2006-06-30 2008-01-02 联想(北京)有限公司 Control device for starting host under low temperature environment and method thereof
CN201315029Y (en) * 2008-12-02 2009-09-23 苏州岱诺信息技术有限公司 Heating control device for electronic equipment
CN101539879A (en) * 2009-02-02 2009-09-23 山东超越数控电子有限公司 Automatic warming method of computer under low temperature

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5183039A (en) * 1991-08-23 1993-02-02 Baxter International Inc. Temperature control device for fluid filled pad
US6928379B2 (en) * 2002-06-21 2005-08-09 Emerson Electric Co. Apparatus and method for sensing temperature
CN101097472A (en) * 2006-06-30 2008-01-02 联想(北京)有限公司 Control device for starting host under low temperature environment and method thereof
CN201315029Y (en) * 2008-12-02 2009-09-23 苏州岱诺信息技术有限公司 Heating control device for electronic equipment
CN101539879A (en) * 2009-02-02 2009-09-23 山东超越数控电子有限公司 Automatic warming method of computer under low temperature

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