TWI633553B - Flash memory device and refresh method thereof - Google Patents
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- G11C16/06—Auxiliary circuits, e.g. for writing into memory
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Abstract
一種快閃記憶體裝置，包括第一快閃記憶體單元。第一快閃記憶體單元包括第一快閃記憶體晶片與第一加熱元件。第一加熱元件設置於第一快閃記憶體晶片的一側，且位於第一快閃記憶體晶片的外部。A flash memory device includes a first flash memory unit. The first flash memory unit includes a first flash memory chip and a first heating element. The first heating element is disposed on one side of the first flash memory chip and is located outside the first flash memory chip.
Description
本發明是有關於一種記憶體裝置及其更新方法，且特別是有關於一種快閃記憶體裝置及其更新方法。The invention relates to a memory device and a method for updating the same, and more particularly to a flash memory device and a method for updating the same.
由於快閃記憶體具有可多次進行資料的存入、讀取、抹除等動作，且存入的資料在斷電後也不會消失之優點，所以已成為個人電腦和電子設備所廣泛採用的一種非揮發性記憶體元件。Flash memory has the advantages of storing, reading, and erasing data multiple times, and the stored data will not disappear after power failure, so it has become widely used in personal computers and electronic devices. A non-volatile memory element.
然而，在對快閃記憶體進行一定次數的程式化/抹除循環(program/erase cycle，P/E cycle)之後，由於電荷(電子或電洞)會被捕捉(trap)在記憶胞中，因此會降低快閃記憶體的可使用次數與使用壽命，進而大幅地降低快閃記憶體的耐用性(endurance)。However, after a certain number of program / erase cycles (P / E cycles) are performed on the flash memory, the charges (electrons or holes) are trapped in the memory cells. Therefore, the usable times and service life of the flash memory are reduced, and the endurance of the flash memory is greatly reduced.
本發明提供一種快閃記憶體裝置，其具有較佳的耐用性。The invention provides a flash memory device, which has better durability.
本發明提供一種快閃記憶體裝置的更新方法，其可大幅地提升快閃記憶體裝置的耐用性。The invention provides a method for updating a flash memory device, which can greatly improve the durability of the flash memory device.
本發明提出一種快閃記憶體裝置，包括第一快閃記憶體單元。第一快閃記憶體單元包括第一快閃記憶體晶片與第一加熱元件。第一加熱元件設置於第一快閃記憶體晶片的一側，且位於第一快閃記憶體晶片的外部。The invention provides a flash memory device including a first flash memory unit. The first flash memory unit includes a first flash memory chip and a first heating element. The first heating element is disposed on one side of the first flash memory chip and is located outside the first flash memory chip.
依照本發明的一實施例所述，在上述快閃記憶體裝置中，更可包括第二快閃記憶體單元。第二快閃記憶體單元設置於第一快閃記憶體單元的一側，且與第一快閃記憶體單元熱隔離。第二快閃記憶體單元包括第二快閃記憶體晶片與第二加熱元件。第二快閃記憶體晶片耦接於第一快閃記憶體晶片。第二加熱元件設置於第二快閃記憶體晶片的一側，且位於第二快閃記憶體晶片外部。According to an embodiment of the present invention, the flash memory device may further include a second flash memory unit. The second flash memory unit is disposed on one side of the first flash memory unit and is thermally isolated from the first flash memory unit. The second flash memory unit includes a second flash memory chip and a second heating element. The second flash memory chip is coupled to the first flash memory chip. The second heating element is disposed on one side of the second flash memory chip and is located outside the second flash memory chip.
依照本發明的一實施例所述，在上述快閃記憶體裝置中，更可包括隔熱層。隔熱層設置於第一快閃記憶體單元與第二快閃記憶體單元之間。According to an embodiment of the present invention, the flash memory device may further include a thermal insulation layer. The thermal insulation layer is disposed between the first flash memory unit and the second flash memory unit.
依照本發明的一實施例所述，在上述快閃記憶體裝置中，第一快閃記憶體單元與第二快閃記憶體單元可彼此分離設置或封裝成一體。According to an embodiment of the present invention, in the above-mentioned flash memory device, the first flash memory unit and the second flash memory unit may be separately disposed from each other or packaged as a whole.
依照本發明的一實施例所述，在上述快閃記憶體裝置中，第一快閃記憶體晶片與第二快閃記憶體晶片可經由控制器進行耦接。According to an embodiment of the present invention, in the above flash memory device, the first flash memory chip and the second flash memory chip may be coupled via a controller.
本發明提出一種快閃記憶體裝置的更新方法，包括以下步驟。提供快閃記憶體裝置。快閃記憶體裝置包括第一快閃記憶體單元。第一快閃記憶體單元包括第一快閃記憶體晶片與第一加熱元件。第一加熱元件設置於第一快閃記憶體晶片的一側，且位於第一快閃記憶體晶片的外部。對第一快閃記憶體晶片進行第一操作步驟。在第一操作步驟的操作次數達到第一快閃記憶體晶片的程式化/抹除循環(program/erase cycle，P/E cycle)次數上限值之前，藉由第一加熱元件對第一快閃記憶體晶片進行第一加熱步驟。The invention provides a method for updating a flash memory device, which includes the following steps. Provide flash memory device. The flash memory device includes a first flash memory unit. The first flash memory unit includes a first flash memory chip and a first heating element. The first heating element is disposed on one side of the first flash memory chip and is located outside the first flash memory chip. The first operation step is performed on the first flash memory chip. Before the operation number of the first operation step reaches the upper limit of the program / erase cycle (P / E cycle) number of the first flash memory chip, the first flash memory chip The flash memory wafer undergoes a first heating step.
依照本發明的一實施例所述，在上述快閃記憶體裝置的更新方法中，更可包括在進行第一操作步驟之後且在進行第一加熱步驟之前，對第一快閃記憶體晶片進行第一抹除操作。According to an embodiment of the present invention, in the method for updating a flash memory device, the method may further include performing the first flash memory chip after the first operation step and before the first heating step. First erase operation.
依照本發明的一實施例所述，在上述快閃記憶體裝置的更新方法中，更可包括重覆進行第一操作步驟與第一加熱步驟。According to an embodiment of the present invention, in the flash memory device updating method, the method may further include repeatedly performing the first operation step and the first heating step.
依照本發明的一實施例所述，在上述快閃記憶體裝置的更新方法中，快閃記憶體裝置更可包括第二快閃記憶體單元。第二快閃記憶體單元設置於第一快閃記憶體單元的一側，且與第一快閃記憶體單元熱隔離。第二快閃記憶體單元包括第二快閃記憶體晶片與第二加熱元件。第二快閃記憶體晶片耦接於第一快閃記憶體晶片。第二加熱元件設置於第二快閃記憶體晶片的一側，且位於第二快閃記憶體晶片外部。According to an embodiment of the present invention, in the method for updating a flash memory device, the flash memory device may further include a second flash memory unit. The second flash memory unit is disposed on one side of the first flash memory unit and is thermally isolated from the first flash memory unit. The second flash memory unit includes a second flash memory chip and a second heating element. The second flash memory chip is coupled to the first flash memory chip. The second heating element is disposed on one side of the second flash memory chip and is located outside the second flash memory chip.
依照本發明的一實施例所述，在上述快閃記憶體裝置的更新方法中，更可包括在進行第一操作步驟之後且在進行第一加熱步驟之前，進行將第一快閃記憶體晶片的資料複製到第二快閃記憶體晶片的第一複製步驟。According to an embodiment of the present invention, in the method for updating a flash memory device, the method may further include, after performing the first operation step and before performing the first heating step, performing the first flash memory chip. The first copying step of copying the data to the second flash memory chip.
依照本發明的一實施例所述，在上述快閃記憶體裝置的更新方法中，更可包括以下步驟。對第二快閃記憶體晶片進行第二操作步驟。進行將第二快閃記憶體晶片的資料複製到第一快閃記憶體晶片的第二複製步驟。在第二操作步驟的操作次數達到第二快閃記憶體晶片的程式化/抹除循環次數上限值之前，藉由第二加熱元件對第二快閃記憶體晶片進行第二加熱步驟。According to an embodiment of the present invention, in the method for updating a flash memory device, the method may further include the following steps. The second operation step is performed on the second flash memory chip. A second copying step of copying the data of the second flash memory chip to the first flash memory chip is performed. Before the operation number of the second operation step reaches the upper limit of the number of programming / erase cycles of the second flash memory chip, the second heating step is performed on the second flash memory chip by the second heating element.
依照本發明的一實施例所述，在上述快閃記憶體裝置的更新方法中，更可包括在進行第二複製步驟之後且在進行第二加熱步驟之前，對第二快閃記憶體晶片進行第二抹除操作。According to an embodiment of the present invention, in the method for updating a flash memory device, the method may further include performing the second flash memory chip after the second copying step and before the second heating step. Second erase operation.
依照本發明的一實施例所述，在上述快閃記憶體裝置的更新方法中，更可包括重覆進行第一操作步驟、第一複製步驟、第一加熱步驟、第二操作步驟、第二複製步驟與第二加熱步驟、重覆進行該第一操作步驟、該第一複製步驟、該第一加熱步驟、或重覆進行該第二操作步驟、該第二複製步驟與該第二加熱步驟。According to an embodiment of the present invention, in the flash memory device updating method, the method may further include repeatedly performing the first operation step, the first copying step, the first heating step, the second operation step, and the second Copying step and second heating step, repeating the first operation step, the first copying step, the first heating step, or repeating the second operation step, the second copying step and the second heating step .
依照本發明的一實施例所述，在上述快閃記憶體裝置的更新方法中，第一快閃記憶體晶片與第二快閃記憶體晶片可經由控制器進行耦接。According to an embodiment of the present invention, in the above flash memory device updating method, the first flash memory chip and the second flash memory chip may be coupled via a controller.
基於上述，在本發明所提出的快閃記憶體裝置中，由於快閃記憶體單元具有位於快閃記憶體晶片外部的加熱元件，因此可藉由加熱元件對快閃記憶體晶片進行加熱，以清除被捕捉在記憶胞中的電荷，而可將快閃記憶體晶片更新成具有接近出廠時效能的產品(fresh device)，進而大幅地提升快閃記憶體裝置的可使用次數與使用壽命。如此一來，快閃記憶體裝置可具有較佳的耐用性。Based on the above, in the flash memory device proposed by the present invention, since the flash memory unit has a heating element located outside the flash memory chip, the flash memory chip can be heated by the heating element to The charge trapped in the memory cell is cleared, and the flash memory chip can be updated to a fresh device with near-factory performance, thereby greatly increasing the usable times and service life of the flash memory device. In this way, the flash memory device can have better durability.
此外，在本發明所提出的快閃記憶體裝置的更新方法中，由於在快閃記憶體晶片的操作次數達到快閃記憶體晶片的程式化/抹除循環次數上限值之前，藉由加熱元件對快閃記憶體晶片進行加熱，因此可有效地清除被捕捉在記憶胞中的電荷，而對快閃記憶體晶片進行更新，進而可大幅地提升快閃記憶體裝置的耐用性。In addition, in the method for updating a flash memory device provided by the present invention, since the number of operations of the flash memory chip reaches the upper limit of the number of programming / erasing cycles of the flash memory chip by heating, The component heats the flash memory chip, so it can effectively remove the charge trapped in the memory cell, and the flash memory chip is updated, which can greatly improve the durability of the flash memory device.
為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。In order to make the above features and advantages of the present invention more comprehensible, embodiments are hereinafter described in detail with reference to the accompanying drawings.
圖1為本發明一實施例的快閃記憶體裝置的示意圖。FIG. 1 is a schematic diagram of a flash memory device according to an embodiment of the present invention.
請參照圖1，快閃記憶體裝置100包括第一快閃記憶體單元102。第一快閃記憶體單元102包括第一快閃記憶體晶片104與第一加熱元件106。第一快閃記憶體晶片104可用以儲存資料。Referring to FIG. 1, the flash memory device 100 includes a first flash memory unit 102. The first flash memory unit 102 includes a first flash memory chip 104 and a first heating element 106. The first flash memory chip 104 can be used to store data.
第一加熱元件106設置於第一快閃記憶體晶片104的一側，且位於第一快閃記憶體晶片104的外部。第一加熱元件106可對第一快閃記憶體晶片104進行加熱，以清除被捕捉在記憶胞中的電荷。第一加熱元件106例如是陶瓷加熱元件或金屬加熱元件。The first heating element 106 is disposed on one side of the first flash memory chip 104 and is located outside the first flash memory chip 104. The first heating element 106 can heat the first flash memory chip 104 to clear the charges trapped in the memory cells. The first heating element 106 is, for example, a ceramic heating element or a metal heating element.
基於上述實施例可知，由於第一快閃記憶體單元102具有位於第一快閃記憶體晶片104外部的第一加熱元件106，因此可藉由第一加熱元件106對第一快閃記憶體晶片104進行加熱，以清除被捕捉在記憶胞中的電荷，而可將第一快閃記憶體晶片104更新成具有接近出廠時效能的產品，進而大幅地提升快閃記憶體裝置100的可使用次數與使用壽命。如此一來，快閃記憶體裝置100可具有較佳的耐用性。Based on the above embodiments, it can be known that, because the first flash memory unit 102 has the first heating element 106 located outside the first flash memory chip 104, the first flash memory chip can be aligned by the first heating element 106. The 104 is heated to clear the charge trapped in the memory cells, and the first flash memory chip 104 can be updated to a product with near-factory performance, thereby greatly increasing the usable times of the flash memory device 100 And service life. In this way, the flash memory device 100 can have better durability.
圖2為本發明另一實施例的快閃記憶體裝置的示意圖。FIG. 2 is a schematic diagram of a flash memory device according to another embodiment of the present invention.
請同時參照圖1與圖2，圖2的快閃記憶體裝置200與圖1的快閃記憶體裝置100的差異在於：快閃記憶體裝置200更包括第二快閃記憶體單元202。圖2與圖1中相同的構件使用相同的符號表示並省略其說明。Please refer to FIG. 1 and FIG. 2 at the same time. The difference between the flash memory device 200 in FIG. 2 and the flash memory device 100 in FIG. 1 is that the flash memory device 200 further includes a second flash memory unit 202. The same components in FIG. 2 as those in FIG. 1 are denoted by the same symbols, and descriptions thereof are omitted.
第二快閃記憶體單元202設置於第一快閃記憶體單元102的一側，且與第一快閃記憶體單元102熱隔離。第一快閃記憶體單元102與第二快閃記憶體單元202可彼此分離設置或封裝成一體。在此實施例中，第一快閃記憶體單元102與第二快閃記憶體單元202是以彼此分離設置為例來進行說明，且第一快閃記憶體單元102與第二快閃記憶體單元202可藉由分離設置而進行熱隔離。The second flash memory unit 202 is disposed on one side of the first flash memory unit 102 and is thermally isolated from the first flash memory unit 102. The first flash memory unit 102 and the second flash memory unit 202 may be disposed separately from each other or packaged into one body. In this embodiment, the first flash memory unit 102 and the second flash memory unit 202 are described as an example of being separated from each other, and the first flash memory unit 102 and the second flash memory The unit 202 can be thermally isolated by a separate arrangement.
第二快閃記憶體單元202包括第二快閃記憶體晶片204與第二加熱元件206。第二快閃記憶體晶片204耦接於第一快閃記憶體晶片104。由於第一快閃記憶體晶片104與第二快閃記憶體晶片204相互耦接，因此可將第一快閃記憶體晶片104的資料複製到第二快閃記憶體晶片204，且亦可將第二快閃記憶體晶片204的資料複製到第一快閃記憶體晶片104，以進行備份。第一快閃記憶體晶片104與第二快閃記憶體晶片204可藉由控制器207與導線208進行耦接，但第一快閃記憶體晶片104與第二快閃記憶體晶片204的耦接方式與控制方式並不以此為限。The second flash memory unit 202 includes a second flash memory chip 204 and a second heating element 206. The second flash memory chip 204 is coupled to the first flash memory chip 104. Since the first flash memory chip 104 and the second flash memory chip 204 are coupled to each other, the data of the first flash memory chip 104 can be copied to the second flash memory chip 204, and the The data of the second flash memory chip 204 is copied to the first flash memory chip 104 for backup. The first flash memory chip 104 and the second flash memory chip 204 can be coupled with the lead 208 by the controller 207, but the coupling of the first flash memory chip 104 and the second flash memory chip 204 The connection mode and control mode are not limited to this.
第二加熱元件206設置於第二快閃記憶體晶片204的一側，且位於第二快閃記憶體晶片204外部。第二加熱元件206可對第二快閃記憶體晶片204進行加熱，以清除被捕捉在記憶胞中的電荷。第二加熱元件206例如是陶瓷加熱元件或金屬加熱元件。The second heating element 206 is disposed on one side of the second flash memory chip 204 and is located outside the second flash memory chip 204. The second heating element 206 can heat the second flash memory chip 204 to clear the charge trapped in the memory cells. The second heating element 206 is, for example, a ceramic heating element or a metal heating element.
基於上述實施例可知，在快閃記憶體裝置200中，可藉由第一加熱元件106與第二加熱元件206分別對第一快閃記憶體晶片104與第二快閃記憶體晶片204進行加熱，以進行更新。如此一來，快閃記憶體裝置200可具有較佳的耐用性。Based on the above embodiment, it can be known that in the flash memory device 200, the first flash memory chip 104 and the second flash memory chip 204 can be heated by the first heating element 106 and the second heating element 206, respectively. To update. In this way, the flash memory device 200 can have better durability.
此外，在快閃記憶體裝置200中，由於第一快閃記憶體單元102與第二快閃記憶體單元202彼此熱隔離，因此在對第一快閃記憶體晶片104與第二快閃記憶體晶片204中的一者進行加熱時，可避免另一者因受熱而產生資料清除的情況。In addition, in the flash memory device 200, since the first flash memory unit 102 and the second flash memory unit 202 are thermally isolated from each other, the first flash memory chip 104 and the second flash memory are being isolated. When one of the body wafers 204 is heated, it is possible to avoid the situation where data is cleared due to the other heat.
圖3為本發明另一實施例的快閃記憶體裝置的示意圖。FIG. 3 is a schematic diagram of a flash memory device according to another embodiment of the present invention.
請同時參照圖2與圖2，圖3的快閃記憶體裝置300與圖2的快閃記憶體裝置200的差異在於熱隔離方式不同。快閃記憶體裝置300更包括隔熱層210。隔熱層210設置於第一快閃記憶體單元102與第二快閃記憶體單元202之間，以將第一快閃記憶體單元102與第二快閃記憶體單元202之間進行熱隔離。隔熱層210的材料例如是陶瓷材料。在此實施例中，第一快閃記憶體單元102與第二快閃記憶體單元202之間是以堆疊設置為例來進行說明，但本發明並不以此為限。此外，圖3的快閃記憶體裝置300與圖2的快閃記憶體裝置200中的其他相似構件使用相同的符號表示並省略其說明。Please refer to FIG. 2 and FIG. 2 at the same time. The difference between the flash memory device 300 in FIG. 3 and the flash memory device 200 in FIG. 2 lies in the thermal isolation method. The flash memory device 300 further includes a thermal insulation layer 210. The thermal insulation layer 210 is disposed between the first flash memory unit 102 and the second flash memory unit 202 to thermally isolate the first flash memory unit 102 from the second flash memory unit 202. . The material of the heat insulation layer 210 is, for example, a ceramic material. In this embodiment, the first flash memory unit 102 and the second flash memory unit 202 are described by taking a stacked arrangement as an example, but the present invention is not limited thereto. In addition, the flash memory device 300 in FIG. 3 and other similar components in the flash memory device 200 in FIG. 2 are denoted by the same symbols, and descriptions thereof are omitted.
基於上述實施例可知，在快閃記憶體裝置300中，可藉由第一加熱元件106與第二加熱元件206分別對第一快閃記憶體晶片104與第二快閃記憶體晶片204進行加熱，以進行更新。如此一來，快閃記憶體裝置200可具有較佳的耐用性。Based on the above embodiment, it can be known that in the flash memory device 300, the first flash memory chip 104 and the second flash memory chip 204 can be heated by the first heating element 106 and the second heating element 206, respectively. To update. In this way, the flash memory device 200 can have better durability.
此外，在快閃記憶體裝置300中，由於第一快閃記憶體單元102與第二快閃記憶體單元202彼此進行熱隔離，因此在對第一快閃記憶體晶片104與第二快閃記憶體晶片204中的一者進行加熱時，可避免另一者因受熱而產生資料清除的情況。In addition, in the flash memory device 300, since the first flash memory unit 102 and the second flash memory unit 202 are thermally isolated from each other, the first flash memory chip 104 and the second flash memory When one of the memory chips 204 is heated, it is possible to avoid the situation where data is cleared due to the other heat.
圖4為本發明一實施例的快閃記憶體裝置的更新方法的流程圖。在此實施例中，快閃記憶體裝置是以圖1的快閃記憶體裝置100為例來進行說明，但本發明並不以此為限。FIG. 4 is a flowchart of a method for updating a flash memory device according to an embodiment of the present invention. In this embodiment, the flash memory device is described by taking the flash memory device 100 of FIG. 1 as an example, but the present invention is not limited thereto.
請同時參照圖4與圖1，進行步驟S100，提供快閃記憶體裝置100。快閃記憶體裝置100中的各構件的材料、設置方式與功效等已於上述圖1的實施例中進行詳盡地說明，故於此不再重覆說明。Referring to FIG. 4 and FIG. 1 at the same time, step S100 is performed to provide a flash memory device 100. The materials, setting methods, and functions of the components in the flash memory device 100 have been described in detail in the embodiment of FIG. 1 described above, so they will not be repeated here.
進行步驟S102，對第一快閃記憶體晶片104進行第一操作步驟。第一操作步驟例如是進行程式化操作、抹除操作、讀取操作或其組合。Go to step S102 to perform a first operation step on the first flash memory chip 104. The first operation step is, for example, performing a programming operation, an erasing operation, a reading operation, or a combination thereof.
可選擇性地進行步驟S104，對第一快閃記憶體晶片104進行第一抹除操作。藉由第一抹除操作可先清除記憶胞中的電荷，後續再對第一快閃記憶體晶片104進行加熱，有助於更完整地清除電荷。Optionally, step S104 may be performed to perform a first erase operation on the first flash memory chip 104. The first erase operation can first clear the charge in the memory cell, and then heat the first flash memory chip 104 later, which helps to clear the charge more completely.
進行步驟S106，在第一操作步驟的操作次數達到第一快閃記憶體晶片104的程式化/抹除循環次數上限值之前，藉由第一加熱元件106對第一快閃記憶體晶片104進行第一加熱步驟。藉此，可有效地清除被捕捉在記憶胞中的電荷。此外，第一快閃記憶體晶片104的程式化/抹除循環次數上限值需視產品規格而定。Go to step S106, before the number of operations of the first operation step reaches the upper limit of the number of programming / erasing cycles of the first flash memory chip 104, the first flash memory chip 104 is subjected to the first heating element 106 A first heating step is performed. This can effectively clear the charge trapped in the memory cell. In addition, the upper limit of the number of programming / erasing cycles of the first flash memory chip 104 depends on the product specifications.
此外，在進行步驟S106之後，可重覆進行上述步驟S102至步驟S106，以重覆進行更新處理。In addition, after step S106 is performed, the above steps S102 to S106 may be repeatedly performed to repeatedly perform the update process.
基於上述實施例可知，由於在第一快閃記憶體晶片104的操作次數達到第一快閃記憶體晶片104的程式化/抹除循環次數上限值之前，藉由第一加熱元件106對第一快閃記憶體晶片104進行加熱，因此可有效地清除被捕捉在記憶胞中的電荷，而對第一快閃記憶體晶片104進行更新，進而可大幅地提升快閃記憶體裝置100的耐用性。Based on the above embodiment, it can be known that, before the number of operations of the first flash memory chip 104 reaches the upper limit of the number of programming / erasing cycles of the first flash memory chip 104, A flash memory chip 104 is heated, so the charge trapped in the memory cells can be effectively removed, and the first flash memory chip 104 can be updated, which can greatly improve the durability of the flash memory device 100 Sex.
圖5為本發明另一實施例的快閃記憶體裝置的更新方法的流程圖。在此實施例中，快閃記憶體裝置是以圖2的快閃記憶體裝置200為例來進行說明，但本發明並不以此為限。圖3的快閃記憶體裝置300亦可採用圖5的方法進行更新。FIG. 5 is a flowchart of a method for updating a flash memory device according to another embodiment of the present invention. In this embodiment, the flash memory device is described by taking the flash memory device 200 of FIG. 2 as an example, but the present invention is not limited thereto. The flash memory device 300 of FIG. 3 can also be updated by using the method of FIG. 5.
請同時參照圖5與圖2，進行步驟S200，提供快閃記憶體裝置200。快閃記憶體裝置200中的各構件的材料、設置方式與功效等已於上述圖1的實施例中進行詳盡地說明，故於此不再重覆說明。Referring to FIG. 5 and FIG. 2 at the same time, step S200 is performed to provide a flash memory device 200. The materials, installation methods, and functions of the components in the flash memory device 200 have been described in detail in the embodiment of FIG. 1 described above, so they will not be repeated here.
進行步驟S202，對第一快閃記憶體晶片104進行第一操作步驟。第一操作步驟例如是進行程式化操作、抹除操作、讀取操作或其組合。Go to step S202 to perform a first operation step on the first flash memory chip 104. The first operation step is, for example, performing a programming operation, an erasing operation, a reading operation, or a combination thereof.
進行步驟S204，進行將第一快閃記憶體晶片104的資料複製到第二快閃記憶體晶片204的第一複製步驟。藉由第一複製步驟，可將儲存於第一快閃記憶體晶片104的資料備份到第二快閃記憶體晶片204。Go to step S204, and perform the first copying step of copying the data of the first flash memory chip 104 to the second flash memory chip 204. Through the first copying step, the data stored in the first flash memory chip 104 can be backed up to the second flash memory chip 204.
可選擇性地進行步驟S206，對第一快閃記憶體晶片104進行第一抹除操作。藉由第一抹除操作可先清除記憶胞中的電荷，後續再對第一快閃記憶體晶片104進行加熱，有助於更完整地清除電荷。Optionally, step S206 may be performed to perform a first erase operation on the first flash memory chip 104. The first erase operation can first clear the charge in the memory cell, and then heat the first flash memory chip 104 later, which helps to clear the charge more completely.
進行步驟S208，在第一操作步驟的操作次數達到第一快閃記憶體晶片104的程式化/抹除循環次數上限值之前，藉由第一加熱元件106對第一快閃記憶體晶片104進行第一加熱步驟。藉此，可有效地清除被捕捉在記憶胞中的電荷。此外，第一快閃記憶體晶片104的程式化/抹除循環次數上限值需視產品規格而定。Go to step S208, before the number of operations of the first operation step reaches the upper limit of the number of programming / erasing cycles of the first flash memory chip 104, the first flash memory chip 104 is aligned by the first heating element 106 A first heating step is performed. This can effectively clear the charge trapped in the memory cell. In addition, the upper limit of the number of programming / erasing cycles of the first flash memory chip 104 depends on the product specifications.
進行步驟S210，對第二快閃記憶體晶片204進行第二操作步驟。第二操作步驟例如是進行程式化操作、抹除操作、讀取操作或其組合。Go to step S210 to perform a second operation step on the second flash memory chip 204. The second operation step is, for example, performing a program operation, an erase operation, a read operation, or a combination thereof.
進行步驟S212，進行將第二快閃記憶體晶片204的資料複製到第一快閃記憶體晶片104的第二複製步驟。藉由第二複製步驟，可將儲存於第二快閃記憶體晶片204的資料備份到第一快閃記憶體晶片104。Go to step S212 to perform a second copying step of copying the data of the second flash memory chip 204 to the first flash memory chip 104. By the second copying step, the data stored in the second flash memory chip 204 can be backed up to the first flash memory chip 104.
可選擇性地進行步驟S214，對第二快閃記憶體晶片204進行第二抹除操作。藉由第二抹除操作可先清除記憶胞中的電荷，後續再對第二快閃記憶體晶片204進行加熱，有助於更完整地清除電荷。Optionally, step S214 may be performed to perform a second erase operation on the second flash memory chip 204. The second erase operation can first clear the charge in the memory cell, and then heat the second flash memory chip 204 later, which helps to clear the charge more completely.
進行步驟S216，在第二操作步驟的操作次數達到第二快閃記憶體晶片204的程式化/抹除循環次數上限值之前，藉由第二加熱元件206對第二快閃記憶體晶片204進行第二加熱步驟。藉此，可有效地清除被捕捉在記憶胞中的電荷。此外，第二快閃記憶體晶片204的程式化/抹除循環次數上限值需視產品規格而定。Go to step S216, before the number of operations of the second operation step reaches the upper limit of the number of programming / erasing cycles of the second flash memory chip 204, the second flash memory chip 204 is subjected to the second heating element 206 A second heating step is performed. This can effectively clear the charge trapped in the memory cell. In addition, the upper limit of the number of programming / erase cycles of the second flash memory chip 204 depends on the product specifications.
此外，在進行步驟S216之後，可依照需求重覆進行上述步驟S202至步驟S216、重覆進行上述步驟S202至步驟S208、或重覆進行上述步驟S210至步驟S216，以重覆進行更新處理。In addition, after step S216 is performed, the above steps S202 to S216 may be repeated, the above steps S202 to S208 may be repeated, or the above steps S210 to S216 may be repeated to perform update processing repeatedly.
基於上述實施例可知，由於在達到第一快閃記憶體晶片104與第二快閃記憶體晶片204的程式化/抹除循環次數上限值之前，分別對第一快閃記憶體晶片104與第二快閃記憶體晶片204進行加熱，因此可有效地清除被捕捉在記憶胞中的電荷，而分別對第一快閃記憶體晶片104與第二快閃記憶體晶片204進行更新，進而可大幅地提升快閃記憶體裝置200的耐用性。Based on the above embodiments, it is known that the first flash memory chip 104 and the second flash memory chip 204 are The second flash memory chip 204 is heated, so the charges trapped in the memory cells can be effectively removed, and the first flash memory chip 104 and the second flash memory chip 204 can be updated respectively, which can further The durability of the flash memory device 200 is greatly improved.
此外，由於第一快閃記憶體晶片104與第二快閃記憶體晶片204相互耦接，因此可將第一快閃記憶體晶片104中的資料複製到第二快閃記憶體晶片204，且亦可將第二快閃記憶體晶片204中的資料複製到第一快閃記憶體晶片104，以進行備份。In addition, since the first flash memory chip 104 and the second flash memory chip 204 are coupled to each other, the data in the first flash memory chip 104 can be copied to the second flash memory chip 204, and The data in the second flash memory chip 204 can also be copied to the first flash memory chip 104 for backup.
在上述實施例中，快閃記憶體裝置雖然是以包括一個或兩個快閃記憶體單元為例來進行說明，但本發明並不以此為限。在其他實施例中，快閃記憶體裝置亦可包括三個以上的快閃記憶體單元，其中多個快閃記憶體單元可藉由各自的加熱元件對各自的快閃記憶體晶片進行更新。此外，在快閃記憶體裝置具有多個快閃記憶體單元的情況下，由於多個快閃記憶體晶片彼此耦接，因此可在對其中一個快閃記憶體晶片進行更新之前，將儲存於其中的資料複製到其他快閃記憶體晶片。In the above embodiment, although the flash memory device is described by using one or two flash memory units as an example, the present invention is not limited thereto. In other embodiments, the flash memory device may also include three or more flash memory units, wherein a plurality of flash memory units may update their respective flash memory chips by their respective heating elements. In addition, in the case where the flash memory device has a plurality of flash memory units, since the plurality of flash memory chips are coupled to each other, it can be stored in the flash memory chip before updating one of the flash memory chips. The data is copied to other flash memory chips.
綜上所述，在上述實施例的快閃記憶體裝置中，由於快閃記憶體單元具有位於快閃記憶體晶片外部的加熱元件，因此可藉由加熱元件對快閃記憶體晶片進行加熱，以清除被捕捉在記憶胞中的電荷，而可將快閃記憶體晶片更新成具有接近出廠時效能的產品，進而大幅地提升快閃記憶體裝置的可使用次數與使用壽命。如此一來，快閃記憶體裝置可具有較佳的耐用性。In summary, in the flash memory device of the above embodiment, since the flash memory unit has a heating element located outside the flash memory chip, the flash memory chip can be heated by the heating element. In order to clear the charge trapped in the memory cell, the flash memory chip can be updated to a product with near-factory performance, thereby greatly improving the usable times and service life of the flash memory device. In this way, the flash memory device can have better durability.
此外，在上述實施例的快閃記憶體裝置的更新方法中，由於在快閃記憶體晶片的操作次數達到快閃記憶體晶片的程式化/抹除循環次數上限值之前，藉由加熱元件對快閃記憶體晶片進行加熱，因此可有效地清除被捕捉在記憶胞中的電荷，而對快閃記憶體晶片進行更新，進而可大幅地提升快閃記憶體裝置的耐用性。In addition, in the flash memory device updating method of the above embodiment, since the number of operations of the flash memory chip reaches the upper limit of the programming / erase cycle number of the flash memory chip, the heating element is used The flash memory chip is heated, so the charge trapped in the memory cells can be effectively removed, and the flash memory chip can be updated, which can greatly improve the durability of the flash memory device.
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed as above with the examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some modifications and retouching without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be determined by the scope of the attached patent application.
100、200‧‧‧快閃記憶體裝置100, 200‧‧‧flash memory devices
102‧‧‧第一快閃記憶體單元102‧‧‧The first flash memory unit
104‧‧‧第一快閃記憶體晶片104‧‧‧The first flash memory chip
106‧‧‧第一加熱元件106‧‧‧First heating element
202‧‧‧第二快閃記憶體單元202‧‧‧Second flash memory unit
204‧‧‧第二快閃記憶體晶片204‧‧‧Second flash memory chip
206‧‧‧第二加熱元件206‧‧‧Second heating element
207‧‧‧控制器207‧‧‧Controller
208‧‧‧導線208‧‧‧Wire
210‧‧‧隔熱層210‧‧‧ Insulation
S100、S102、S104、S106、S200、S202、S204、S206、S208、S210、S212、S214、S216‧‧‧步驟S100, S102, S104, S106, S200, S202, S204, S206, S208, S210, S212, S214, S216‧‧‧ steps
圖1為本發明一實施例的快閃記憶體裝置的示意圖。 圖2為本發明另一實施例的快閃記憶體裝置的示意圖。 圖3為本發明另一實施例的快閃記憶體裝置的示意圖。 圖4為本發明一實施例的快閃記憶體裝置的更新方法的流程圖。 圖5為本發明另一實施例的快閃記憶體裝置的更新方法的流程圖。FIG. 1 is a schematic diagram of a flash memory device according to an embodiment of the present invention. FIG. 2 is a schematic diagram of a flash memory device according to another embodiment of the present invention. FIG. 3 is a schematic diagram of a flash memory device according to another embodiment of the present invention. FIG. 4 is a flowchart of a method for updating a flash memory device according to an embodiment of the present invention. FIG. 5 is a flowchart of a method for updating a flash memory device according to another embodiment of the present invention.
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| US8755227B2 (en) * | 2012-01-30 | 2014-06-17 | Phison Electronics Corp. | NAND flash memory unit, NAND flash memory array, and methods for operating them |
| TWI506642B (en) * | 2012-12-07 | 2015-11-01 | Phison Electronics Corp | Memory repairing method, and memory controller and memory storage apparatus using the same |
| JP2017011123A (en) * | 2015-06-23 | 2017-01-12 | ルネサスエレクトロニクス株式会社 | Semiconductor device and driving method of semiconductor device |
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| US20100306583A1 (en) * | 2009-05-26 | 2010-12-02 | Yong-June Kim | Memory Systems and Defective Block Management Methods Related Thereto |
| US20150114946A1 (en) * | 2011-05-05 | 2015-04-30 | Micron Technology, Inc. | Thermal treatment of flash memories |
| US20140006688A1 (en) * | 2012-07-02 | 2014-01-02 | Super Talent Technology, Corp. | Endurance and Retention Flash Controller with Programmable Binary-Levels-Per-Cell Bits Identifying Pages or Blocks as having Triple, Multi, or Single-Level Flash-Memory Cells |
| TW201441818A (en) * | 2013-04-16 | 2014-11-01 | Innodisk Corp | Flash memory device capable of regulating temperature |
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| CN108573731B (en) | 2020-12-18 |
| CN108573731A (en) | 2018-09-25 |
| TW201833932A (en) | 2018-09-16 |
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