CN111459409A - Optimized flash memory solid-state disk heating method and flash memory solid-state disk - Google Patents
Optimized flash memory solid-state disk heating method and flash memory solid-state disk Download PDFInfo
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- CN111459409A CN111459409A CN202010205061.7A CN202010205061A CN111459409A CN 111459409 A CN111459409 A CN 111459409A CN 202010205061 A CN202010205061 A CN 202010205061A CN 111459409 A CN111459409 A CN 111459409A
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/0614—Improving the reliability of storage systems
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0638—Organizing or formatting or addressing of data
- G06F3/064—Management of blocks
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
- G06F3/0673—Single storage device
- G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
Abstract
The invention discloses an optimized flash memory solid-state disk heating method and a flash memory solid-state disk, and belongs to the field of flash memory storage equipment. The method comprises the following steps: recording the average residence time DT of the end of the service life of each flash memory block in the flash memory solid-state diskavgCalculating the actual reliability RBER of the flash memory block according to the average residence time of the flash memory block; comparing the RBER and CBER sizes of the flash blocks, according to DTavgAdding the values into proper positions in the corresponding list in sequence; when the flash memory solid-state disk reaches the end of the service life, only the flash memory blocks in the flash memory block list with short residence time are heated, and the flash memory blocks in the flash memory block list with long residence time are not heated. According to the invention, by considering the influence of the average residence time of the flash memory block on the reliability recovery of the flash memory, a part of unnecessary high-delay and high-energy-consumption heating operation can be reduced under the condition of not influencing the reliability of the solid state disk, and the heating efficiency of the solid state disk is improved.
Description
Technical Field
The invention belongs to the field of flash memory storage devices, and particularly relates to an optimized flash memory solid-state disk heating method and a flash memory solid-state disk.
Background
Flash memory solid state disks are a type of non-volatile storage device that employs flash memory as a storage medium, and are widely used in computer storage systems. Flash solid state disks have many different inherent characteristics compared to mechanical hard disks. For example, the read/write speed is asymmetric, the data is updated in different places, the flash memory chip has a fixed erasing frequency (P/E), and the like. When the erasing times of the flash memory chip in the flash memory solid-state disk reach a preset threshold value given by a manufacturer, the flash memory solid-state disk cannot ensure the validity of the stored data information, so that the service life of the flash memory solid-state disk is prolonged.
In order to prolong the service life of the flash memory solid-state disk, a built-in heating device can be added in the flash memory solid-state disk to realize the self-heating recovery technology. Through the flash memory chip structure with the built-in heating plate, the flash memory solid-state disk can recover the storage capacity of the flash memory chip to a certain extent through a heating method, and the service life of the flash memory solid-state disk is prolonged. When the P/E threshold value preset by a manufacturer is reached, the service life of the flash memory solid-state disk is prolonged, and the failed flash memory blocks are heated, so that the erasing times of extra quantity can be increased.
Since the heating operation is time-consuming, for example, approximately one second, each time the heating operation is performed, the normally performed I/O read/write operation is adversely affected, and the performance of the flash memory solid-state disk fluctuates. Furthermore, performing the heating operation in these chip structures requires a continuous amount of electrical and energy consumption. Particularly, when a large number of heating operations are performed within a certain period of time, great performance fluctuation and increased power consumption are caused, and thus a stable flash memory solid-state disk cannot be realized.
Disclosure of Invention
Aiming at the problems of high delay and high energy consumption of the heating method in the prior art, the invention provides an optimized flash memory solid-state disk heating method and a flash memory solid-state disk, and aims to reduce unnecessary heating operation and improve the heating efficiency of a solid-state hard disk.
To achieve the above object, according to a first aspect of the present invention, there is provided an optimized flash memory solid state disk heating method, comprising the steps of:
s1, recording the average residence time DT of the service life terminal of each flash memory block in the flash memory solid-state diskavgCalculating the actual reliability RBER of the flash memory block according to the average residence time of the flash memory block;
s2, comparing the actual reliability RBER of each flash block with the correctable bit error rate CBER of the built-in error correcting code of the flash solid-state disk, adding the flash block into a flash block list L DT with long residence time when RBER is less than CBER, or adding a flash block list SDT with short residence time when adding the list, according to DT when adding the listavgThe size of the value is sequentially added to the appropriate position in the corresponding list;
and S3, when the flash memory solid-state disk reaches the service life end, only heating the flash memory blocks in the flash memory block list with short residence time, and not heating the flash memory blocks in the flash memory block list with long residence time.
Preferably, step S1 includes the following sub-steps:
s11, tracking current erasing and writing times PE of flash memory blocks in healthy flash memory block listcurrentObtaining the upper limit PE of the erasing times of the flash memory blocklimitWherein, PElimitInitialization as manufacturer-defined upper limit of erase-write times PEinitWhen a PE of a flash blockcurrent＝PElimit-PE*When, PE*If it is the number of times of erasing that can affect the reliability recovery of the flash memory block, the process proceeds to step S12;
s12, recording the flash memory block in PElimit-PE*And PElimit-PE*+1 dwell time between two erase times
S13, when the erasing frequency of the flash memory block reaches PElimitFirst, the dwell time between two successive erase and write times is recorded cyclically
When PE of the flash blockcurrent＝PElimitThen, the process proceeds to step S14;
s14, calculating the average residence time DT of the flash memory block according to the plurality of recorded residence times of the flash memory blockavg；
S15, average residence according to flash memory blocksTime DTavgAnd calculating the actual reliability RBER of the flash memory block.
Preferably, the calculation formula of the actual reliability RBER of the flash block is as follows:
RBER＝RBERinit+a*(PEcurrent+b)*ln(1+RTmax/(c+d*DTavg))
wherein, RBERinitIs the raw bit error rate, PE, at the completion of the data programmingcurrentIs the current erase-write times, RTmaxIs the time required to be maintained after the data programming, DT, required by the manufactureravgIs the average residence time of the flash block and a, b, c, d are the four formula correlation coefficients.
Preferably, PE*Is 20.
Preferably, step S3 includes the following sub-steps:
s31, when the flash memory solid-state disk reaches the service life end, the step S32 is carried out;
s32, judging whether the SDT has a flash memory block, if so, selecting the flash memory block with the shortest residence time from a flash memory block list with short residence time, and entering the step S33, otherwise, ending;
s33, heating the flash memory block once, then deleting the flash memory block from the SDT and putting the flash memory block into a healthy flash memory block list, and entering the step S32.
To achieve the above object, according to a second aspect of the present invention, there is provided a flash solid state disk comprising a control module, wherein the control module heats a failed flash block by using the optimized flash solid state disk heating method according to the first aspect.
Preferably, the data allocation of the flash memory solid state disk comprises the following steps:
(1) if healthy flash memory blocks exist in the flash memory solid-state disk, selecting one flash memory block with the least heating times as an active flash memory block, and putting newly arrived data into the active flash memory block for storage; otherwise, entering the step (2);
(2) if there is a list L DT of flash blocks with long residence time in the flash solid state disk, the flash block with the longest residence time is preferentially selected from the listThe block is used as an active flash block, in which case the upper limit of the number of erase cycles of the flash block is PElimitWill increase PE (DT)avg) Wherein, PE (DT)avg) Denotes a dwell time of DTavgUnder the condition of increased erasing and writing cycle times, newly arrived data is put into an active flash memory block for storage; otherwise, entering the step (3);
(3) if a flash memory block list SDT with short residence time exists in the flash memory solid-state disk, preferentially selecting the flash memory block with the shortest residence time from the list as an active flash memory block, and when the RBER of the flash memory block is more than or equal to CBER, firstly executing a heating operation, and putting newly arrived data into the active flash memory block for storage.
Generally, by the above technical solution conceived by the present invention, the following beneficial effects can be obtained:
(1) aiming at the problems that a large number of flash memory blocks are heated in a short time when a flash memory solid-state disk fails, and heating time is long and energy consumption is high due to excessive heating operation in the traditional heating method, the flash memory blocks in a flash memory block list with short residence time are preferentially heated when the flash memory solid-state disk reaches the end of the service life, the flash memory blocks in the flash memory block list with long residence time are not heated, the influence of the average residence time of the flash memory blocks on the reliability recovery of the flash memory is considered, a part of unnecessary high-delay and high-energy-consumption heating operation can be reduced under the condition that the reliability of the solid-state disk is not influenced, and the heating efficiency of the solid-state disk is improved.
(2) Aiming at the problem that the traditional data allocation strategy does not consider the flash memory blocks which do not need to execute the heating operation, the invention solves the data allocation problem after the optimized flash memory solid-state disk heating method by enhancing the priority of the allocated flash memory blocks during data allocation.
Drawings
FIG. 1 is a flow chart of an optimized flash memory solid-state disk heating method according to an embodiment of the present invention;
fig. 2 is a schematic diagram of an improved data allocation provided by an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
First, terms related to the present invention are explained as follows:
residence time of flash block: the time between two consecutive erase and write times of the flash block.
As shown in fig. 1, the present invention provides an optimized flash memory solid state disk heating method, which includes the following steps:
step S1, recording the average residence time DT of the end of the service life of each flash memory block in the flash memory solid-state diskavgAnd calculating the actual reliability RBER of the flash memory block according to the average residence time of the flash memory block.
Step S1 includes the following substeps:
s11, tracking current erasing and writing times PE of flash memory blocks in healthy flash memory block listcurrentObtaining the upper limit PE of the erasing times of the flash memory blocklimitWherein, PElimitInitialization as manufacturer-defined upper limit of erase-write times PEinitWhen a PE of a flash blockcurrent＝PElimit-PE*When, PE*The number of times of erasing indicating that the reliability recovery of the flash block can be affected proceeds to step S12.
The flash blocks in the healthy flash block list are initialized to all flash blocks in the flash solid state disk, and as processing proceeds, a portion of the flash blocks are added to either the long-dwell flash block list L DT or the short-dwell flash block list SDT.
PE has a value ranging from 1 to PEinitPreferably, this embodiment is 20.
S12, recording the flash memory block in PElimit-PE*And PElimit-PE*+1 dwell time between two erase times
PE when flash blockcurrent＝PElimitAt-20, the controller recording the flash solid state disk allocates the flash block as an active block to store the start time T of the newly arrived data1. When PE of the flash blockcurrent＝PElimit19, the controller of the recording flash memory solid state disk allocates the flash memory block as an active block to store the starting time T of the newly arrived data2. Calculating the residence time DT according to the above two times20＝T2-T1。
S13, when the erasing frequency of the flash memory block reaches PElimitFirst, the dwell time between two successive erase and write times is recorded cyclically
When PE of the flash blockcurrent＝PElimitThen, the process proceeds to step S14.
Separately calculate PElimit-19 and PElimit-18、PElimit-18 and PElimit-17......PElimit-1 and PElimitBetween the dwell time DT19、DT18......DT1。
S14, calculating the average residence time DT of the flash memory block according to the plurality of recorded residence times of the flash memory blockavg。
S15, according to the average residence time DT of the flash memory blocksavgAnd calculating the actual reliability RBER of the flash memory block.
The calculation formula of the actual reliability RBER of the flash memory block is as follows:
RBER＝RBERinit+a*(PEcurrent+b)*ln(1+RTmax/(c+d*DTavg))
wherein, RBERinitIs the original bit error code at the completion of data programmingRate, PEcurrentIs the current erase-write times, RTmaxIndicating the time required to maintain after programming the data, DT, required by the manufactureravgIs the average residence time of the flash block and a, b, c, d are the four formula correlation coefficients.
S2, comparing the actual reliability RBER of each flash block with the correctable bit error rate CBER of the built-in error correcting code of the flash solid-state disk, adding the flash block into a flash block list L DT with long residence time when RBER is less than CBER, or adding a flash block list SDT with short residence time when corresponding list is added, according to DTavgThe size of the value is sequentially added to the appropriate position in the corresponding list.
The longer the dwell time, the more the reliability of the flash memory is restored, and therefore, the invention focuses on heating the short dwell time flash blocks for recovery.
And S3, when the flash memory solid-state disk reaches the service life end, only heating the flash memory blocks in the flash memory block list with short residence time, and not heating the flash memory blocks in the flash memory block list with long residence time.
S31, when the flash memory solid-state disk reaches the service life end, the step S32 is carried out.
The judgment standard of the flash memory solid-state disk reaching the service life end is that 80% of flash memory blocks fail. When the flash solid state disk reaches the end of life, most of PE of flash blocks is used because of the wear leveling strategycurrentAll reach the PElimit. At this time, the flash memory block having the shortest residence time is preferentially selected from the SDT to determine whether or not the heating operation is performed.
S32, judging whether the SDT has the flash memory block, if so, selecting the flash memory block with the shortest residence time from the flash memory block list with the short residence time, and entering the step S33, otherwise, ending.
The next flash block with the shortest dwell time is selected from the SDT to be heated up cyclically until all flash blocks in the SDT have been detected.
S33, heating the flash memory block once, then deleting the flash memory block from the SDT and putting the flash memory block into a healthy flash memory block list, and entering the step S32.
At this time, the upper limit PE of the erasing cycle number of the flash memory blocklimitWill increase PEiWherein, PEiIndicating the number of erase-write cycles increased after the ith heating.
The invention also provides a flash memory solid-state disk which comprises a control module, wherein the control module adopts the optimized flash memory solid-state disk heating method to heat the failed flash memory blocks.
As shown in fig. 2, the data allocation of the flash memory solid state disk includes the following steps:
(1) if the flash memory solid-state disk has healthy flash memory blocks, selecting one flash memory block with the least heating times as an active flash memory block, and putting newly arrived data into the active flash memory block for storage; otherwise, entering the step (2);
(2) if a flash block list L DT with long residence time exists in the flash solid state disk, the flash block with the longest residence time is preferentially selected from the list as the 'active' flash block, and the upper limit PE of the erasing and writing cycle times of the flash block is realized at the momentlimitWill increase PE (DT)avg) Wherein, PE (DT)avg) Denotes a dwell time of DTavgUnder the condition of increased erasing and writing cycle times, newly arrived data is put into an active flash memory block for storage; otherwise, entering the step (3);
(3) if a flash memory block list SDT with short residence time exists in the flash memory solid-state disk, preferentially selecting the flash memory block with the shortest residence time from the list as an active flash memory block, and when the RBER of the flash memory block is more than or equal to CBER, firstly executing a heating operation, and putting newly arrived data into the active flash memory block for storage.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (7)
1. An optimized flash memory solid state disk heating method is characterized by comprising the following steps:
s1, recording the average residence time DT of the service life terminal of each flash memory block in the flash memory solid-state diskavgCalculating the actual reliability RBER of the flash memory block according to the average residence time of the flash memory block;
s2, comparing the actual reliability RBER of each flash block with the correctable bit error rate CBER of the built-in error correcting code of the flash solid-state disk, adding the flash block into a flash block list L DT with long residence time when RBER is less than CBER, or adding a flash block list SDT with short residence time when adding the list, according to DT when adding the listavgThe size of the value is sequentially added to the appropriate position in the corresponding list;
and S3, when the flash memory solid-state disk reaches the service life end, only heating the flash memory blocks in the flash memory block list with short residence time, and not heating the flash memory blocks in the flash memory block list with long residence time.
2. The method of claim 1, wherein step S1 includes the sub-steps of:
s11, tracking current erasing and writing times PE of flash memory blocks in healthy flash memory block listcurrentObtaining the upper limit PE of the erasing times of the flash memory blocklimitWherein, PElimitInitialization as manufacturer-defined upper limit of erase-write times PEinitWhen a PE of a flash blockcurrent＝PElimit-PE*When, PE*If it is the number of times of erasing that can affect the reliability recovery of the flash memory block, the process proceeds to step S12;
s12, recording the flash memory block in PElimit-PE*And PElimit-PE*+1 dwell time between two erase times
S13, when the erasing frequency of the flash memory block reaches PElimitFront, cyclically recording two successive rubsDwell time between writes
When PE of the flash blockcurrent＝PElimitThen, the process proceeds to step S14;
s14, calculating the average residence time DT of the flash memory block according to the plurality of recorded residence times of the flash memory blockavg；
S15, according to the average residence time DT of the flash memory blocksavgAnd calculating the actual reliability RBER of the flash memory block.
3. Method according to claim 1 or 2, characterized in that the actual reliability RBER of a flash block is calculated by the formula:
RBER＝RBERinit+a*(PEcurrent+b)*ln(1+RTmax/(c+d*DTavg))
wherein, RBERinitIs the raw bit error rate, PE, at the completion of the data programmingcurrentIs the current erase-write times, RTmaxIs the time required to be maintained after the data programming, DT, required by the manufactureravgIs the average residence time of the flash block and a, b, c, d are the four formula correlation coefficients.
4. A method according to claim 2 or 3, characterised in that PE*Is 20.
5. The method according to any of claims 1 to 4, characterized in that step S3 comprises the sub-steps of:
s31, when the flash memory solid-state disk reaches the service life end, the step S32 is carried out;
s32, judging whether the SDT has a flash memory block, if so, selecting the flash memory block with the shortest residence time from a flash memory block list with short residence time, and entering the step S33, otherwise, ending;
s33, heating the flash memory block once, then deleting the flash memory block from the SDT and putting the flash memory block into a healthy flash memory block list, and entering the step S32.
6. A flash memory solid state disk, characterized in that the flash memory solid state disk comprises a control module, the control module adopts the optimized heating method of the flash memory solid state disk as claimed in any one of claims 1 to 5 to heat the failed flash memory block.
7. The flash memory solid state disk of claim 6, wherein the data allocation of the flash memory solid state disk comprises the steps of:
(1) if healthy flash memory blocks exist in the flash memory solid-state disk, selecting one flash memory block with the least heating times as an active flash memory block, and putting newly arrived data into the active flash memory block for storage; otherwise, entering the step (2);
(2) if a flash block list L DT with long residence time exists in the flash solid state disk, the flash block with the longest residence time is preferentially selected from the list as the active flash block, and at the moment, the upper limit PE of the erasing and writing cycle times of the flash blocklimitWill increase PE (DT)avg) Wherein, PE (DT)avg) Denotes a dwell time of DTavgUnder the condition of increased erasing and writing cycle times, newly arrived data is put into an active flash memory block for storage; otherwise, entering the step (3);
(3) if a flash memory block list SDT with short residence time exists in the flash memory solid-state disk, preferentially selecting the flash memory block with the shortest residence time from the list as an active flash memory block, and when the RBER of the flash memory block is more than or equal to CBER, firstly executing a heating operation, and putting newly arrived data into the active flash memory block for storage.
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