CN108570661A - Substrate repair apparatus - Google Patents
Substrate repair apparatus Download PDFInfo
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- CN108570661A CN108570661A CN201810180229.6A CN201810180229A CN108570661A CN 108570661 A CN108570661 A CN 108570661A CN 201810180229 A CN201810180229 A CN 201810180229A CN 108570661 A CN108570661 A CN 108570661A
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- Prior art keywords
- work department
- side connector
- tank
- supply
- substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1306—Details
- G02F1/1309—Repairing; Testing
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/179—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/861—Repairing
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- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
A kind of substrate repair apparatus, can omit the replacement operation of work department side tank, and be easy to carry out the supply of the processing gas for the repairing treatment of repairing substrate.Work department (3) has：Small gas tank (5) stores processing gas and to laser CVD processing unit (4) supply processing gas；And work department side connector (6), unstrpped gas can be imported to small gas tank (5), it is equipped with large capacity high-pressure gas tank (7) in the position for not interfering work department (3) and the supply of large capacity high-pressure gas tank (7) is connected to tank side connector (9) with pipeline (8) by supply, work department side connector (6) can be combined and be released with supply tank side connector (9) and combine.
Description
Technical field
The present invention relates to the substrate repair apparatus that the defect of wiring pattern to being formed in substrate surface etc. is repaired.
Background technology
Liquid crystal display panel, organic EL (Electro-Luminescence：Electroluminescent) display panel of panel etc. has shape
At the substrate for having wiring pattern, insulating film etc..In the manufacturing process of display panel, need to wiring pattern, insulating film etc.
The repair process that defect is repaired.As repair process, there is the cut-out for the short position that wiring pattern is carried out by laser
Removal processing, pass through laser CVD (Chemical Vapor Deposition：Chemical vapor deposition) technology progress wiring diagram
The so-called CVD of the film forming of case, insulating film etc. is processed.Patent document 1 discloses the surface for having the substrate along display device
The repair apparatus of mobile work department.In work department equipped be removed processing laser processing processing unit, carry out CVD add
The CVD processing units of work.The laser processing processing unit, CVD processing units move together with work department along the surface of substrate, are somebody's turn to do
The repair process of the rejected region of substrate.
Above-mentioned CVD processing units need to form a film the processing gas of required unstrpped gas etc..It is supplied as to CVD processing units
To the method for unstrpped gas etc., there are following two methods.First method is, as shown in Figure 5, using with pliability
Connection flexible pipe 101, the method that CVD mechanisms 102 are connect with the large-scale gas tank 104 being set to except device 103.Second party
Method is the method that gas receiver is equipped on work department.
Existing technical literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2010-78899 bulletins
Invention content
Problems to be solved by the invention
But in above-mentioned first method, there are problems in the durability of connection flexible pipe 101, mobility and coiling.
In first method, connection flexible pipe 101 is easy to become short life.In first method, maintenance when connection flexible pipe 101 consumes becomes
It obtains troublesome.In first method, therefore, to assure that the coiling space of connection flexible pipe 101 may lead to the enlargement of device 103.
In first method, when connection flexible pipe 101 is moved with work department, need for preventing connection flexible pipe 101 from falling to substrate
Bearing unit (not shown), the enlargement and complication of device 103 may be caused.
In above-mentioned second method, since the carrying weight to work department can not be increased, the weight and appearance of gas receiver
Amount is restricted.Therefore, in the second approach, the replacement frequency that there is the gas receiver for being equipped on work department gets higher, production efficiency
Decline this problem.As the replacement operation of gas receiver, the operation for carrying out following complexity is needed：Gas storage is removed from work department
Cylinder, which is conveyed to outside device, and the gas receiver of new replacement of the conveying filled with unstrpped gas is simultaneously installed on work
Portion.
The present invention makes in view of the above subject, and its purpose is to provide a kind of substrate repair apparatus, can omit work
The replacement operation of portion side tank can easily be done the supply of the processing gas for the repairing treatment of repairing substrate.
Means for solving the problems
Reached purpose in order to solve the above problems, embodiments of the present invention are characterized in that substrate repair apparatus has
It is standby：Main part；Work department, being arranged with respect to the main part can move；And repairing treatment portion, it is set to the work
Portion, the substrate repair apparatus is by the repairing treatment portion and using processing gas to the defect on the surface of repairing substrate
It is repaired, wherein the work department has：Work department side tank stores processing gas and is supplied to the repairing treatment portion
The processing gas；And work department side connector, processing gas can be imported to work department side tank, not interfere institute
The position for stating main part and the work department is fixed with through pipeline and supply tank connected supply tank side connector, the work
The portion side connector of work can be combined or be released combination with tank side connector with the supply.
As the above embodiment, preferably, by making the work department be moved towards the supply tank side connector, institute
It states work department side connector to be combined with the supply with tank side connector, by making the work department be directed away from supply tank side
The direction of connector is moved, and the work department side connector is released with tank side connector with the supply and combined.
As the above embodiment, preferably, the work department is carried out according to the residue gas scale of construction of work department side tank
The action for making the work department side connector be combined with tank side connector with the supply.
As the above embodiment, preferably, the main part planer-type workbench, the planer-type workbench is that have
The repairing for configuring the repairing substrate configures platform with substrate, and the work department can be made to configure platform along the repairing substrate
X-Y axis directions movement.
As the above embodiment, preferably, open and close valve is equipped in the pipeline, the work department side connector is built-in with
Automatic on/off valve, when the work department side connector and the supply are released from the combination of tank side connector, the automatic shutter
Valve closes internal flow path.
As the above embodiment, preferably, the substrate repair apparatus is also equipped with control unit, and the control unit carries out such as
Lower control：According to the information of the residue gas scale of construction of work department side tank, main part and the work department described in drive control and
So that the work department side connector is combined with the supply with tank side connector, and releases the work department side connector and the confession
When to the combination of tank side connector, the open and close valve is closed.
As the above embodiment, preferably, the repairing treatment portion forms a film to the surface of repairing substrate
Processing, the processing gas are the unstrpped gas for film forming.
Invention effect
It is low and be easy to carry out for handling to be capable of providing a kind of frequency of maintenance for substrate repair apparatus according to the present invention
With the substrate repair apparatus of the supply of the processing gas of the repairing treatment of substrate.
Description of the drawings
Fig. 1 is the stereogram of the outline for the substrate repair apparatus for showing embodiment of the present invention.
Fig. 2 is the work department side connector and supply tank side connector for the substrate repair apparatus for showing to make embodiment of the present invention
In conjunction with action definition graph.
Fig. 3 be work department side connector and the supply tank side connector of the substrate repair apparatus for showing embodiment of the present invention
In conjunction with state definition graph.
Fig. 4 is the flow chart of the control method for the substrate repair apparatus for showing embodiment of the present invention.
Fig. 5 is the approximate stereogram of existing substrate repair apparatus.
Reference sign：
1：Substrate repair apparatus；2：Planer-type workbench (main part)；3：Work department；4：Laser CVD processing unit (mend
Reason portion)；5：Small gas tank (work department side tank)；6：Work department side connector；6A：Front end insertion section；6B：Pipe mounting portion；6C：From
Dynamic open and close valve；6D：Internal flow path；7：Large capacity high-pressure gas tank (supply tank)；8：Supply pipeline (pipeline)；8A、8B、
8C：Supply pipeline；9：Supply tank side connector；9A：Pipe installing portion；9B：Front end is inserted into portion；9C：Fastener；10：It opens
Valve closing；11：Control unit；12：Planer-type workbench driving portion；13：Repairing substrate；14、15：In conjunction with pipe；21：Platform (use by repairing
Substrate configures platform)；22、23：Y direction guide portion；24：X-direction guide portion.
Specific implementation mode
Hereinafter, being described in detail to the substrate repair apparatus of embodiments of the present invention based on attached drawing.Wherein, attached drawing
It is only illustrative, it should be noted that the size of each component, the ratio of size, shape etc. and practical difference.In addition, further including each attached
The relationship of mutual size, ratio, variform part between figure.
Here, before illustrating embodiment, repairing treatment is briefly described bright.In embodiments described below
In, as an example of repairing treatment, for apply laser CVD method film process example.As the film process, specifically
It can enumerate：By laser CVD method is formed a film connect up mutual connection the insulating films such as processing, silicon nitride film shape
At.In the case where carrying out repairing treatment by laser CVD method, processing gas is used.It should be noted that the present invention can
Applied to the various repairing units for consuming gas in the repairing treatment of repairing substrate.
It can be applied as repairing substrate and constitute various FPD (Flat Panel Display：Flat-panel monitor) base
Plate.As repairing substrate, can specifically enumerate：For example, the formation of the TFT substrate of liquid crystal display panel, organic EL panel has electricity
The substrate etc. of the various wiring patterns such as son/hole injecting electrode.
[embodiment]
(structure of substrate repair apparatus)
Hereinafter, illustrating the structure of the substrate repair apparatus 1 of embodiment of the present invention using Fig. 1 to Fig. 3.As shown in Figure 1, base
Plate repair apparatus 1 has：As the planer-type workbench 2 of main part, work department 3, as the laser CVD processing in repairing treatment portion
Portion 4, the small gas tank 5 as work department side tank, work department side connector 6, as being connected to the large capacity for making tank for the supply
The supply of the pipeline of high-pressure gas tank 7 pipeline 8, supply tank side connector 9, open and close valve 10, control unit 11 and planer-type work
Make platform driving portion 12.It should be noted that small gas tank 5 has the pressure sensor (not shown) of the detection residue gas scale of construction.
The supply source for the unstrpped gas that large capacity high-pressure gas tank 7 is consumed by laser CVD processing unit 4.Planer-type workbench 2, which has, to be made
For the function of detent mechanism.
Work department 3 is equipped on planer-type workbench 2.The planer-type workbench 2 has configures platform as repairing substrate
Platform 21, the aftermentioned repairing substrate 13 of the mounting of this 21.Planer-type workbench 2 can make work department 3 in the top of platform 21, scheme
It is moved in Y direction in X-direction and figure represented by middle Xg represented by Yg.
Planer-type workbench 2 has a pair of of Y direction guide portion 22,23 and X-direction guide portion 24.A pair of of Y-axis side
To the configuration of guide portion 22,23 on the both sides of the X-direction of platform 21, extend respectively along Y direction.X-direction guide portion 24
It is set up in a pair of of Y direction guide portion 22,23, is extended along X-direction.X-direction guide portion 24 is supported to relative to a pair of of Y
Axis direction guide portion 22,23 can move in the Y direction represented by arrow Yg.X-direction guide portion 24 is based on come automatic control
The drive signal in portion 11 processed is simultaneously moved by planer-type workbench driving portion 12 in the Y direction represented by arrow Yg.
In the present embodiment, work department 3 is made of rectangular slab.It should be noted that the shape, structure of work department 3 is not
It is limited to this.Work department 3 is supported to move in the X-axis direction relative to X-direction guide portion 24.Work department 3 is based on coming
In X-direction from the drive signal of control unit 11 and by X-direction driving mechanism (not shown) represented by arrow Xg
It is mobile.X-direction guide portion 24 is moved along Y direction guide portion 22,23, and thus work department 3 moves in the Y-axis direction.Therefore,
In the top of platform 21, work department 3 can be moved to any position of X-Y axis directions.
As shown in Figure 1, laser CVD processing unit 4 is formed a film by using laser CVD method and to being configured at repairing on platform 21
Benefit is repaired with the defect on the surface of substrate 13.Laser CVD processing unit 4 has laser light source (not shown), various optical systems
System etc..
Small gas tank 5 is configured to abut in the X-axis direction with laser CVD processing unit 4.Also, small gas tank 5 with
The mode that laser CVD processing unit 4 is connected in conjunction with pipe 14 by being connected to laser CVD processing unit 4.Small gas tank 5 accumulates conduct
The unstrpped gas of processing gas, as needed to 4 base feed gas of laser CVD processing unit.Small gas tank 5 is set to
The weight and capacity of the degree of work department 3 smoothly moved are not influenced.
Work department side connector 6 is configured to be adjacent to the side opposite with laser CVD processing unit 4 of small gas tank 5.Work
Make portion's side connector 6 in a manner of being connected to small gas tank 5 by being connected to small gas tank 5 in conjunction with pipe 15.It needs to illustrate
It is, it is preferred that in conjunction with pipe 15 there is rigidity, work department side connector 6 to be supported to not shake.
As shown in Figures 1 and 2, the front end insertion section 6A of work department side connector 6 is configured to from work department 3 the Xr institutes table into figure
The side for the X-direction shown protrudes.Preferably, which is passed through in a manner of not shaken relative to work department 3
Fixed cell (not shown) is fixed on work department 3.
As shown in Fig. 2, there is work department side connector 6 base end side in above-mentioned front end insertion section 6A to be installed in conjunction with pipe 15
Pipe mounting portion 6B.Pipe mounting portion 6B is built-in with automatic on/off valve 6C, when work department side connector 6 is not tied with supply with tank side connector 9
When conjunction, automatic on/off valve 6C closes internal flow path 6D.
The position relationship of laser CVD processing unit 4, small gas tank 5 and work department side connector 6 can not also be above-mentioned knot
Structure.In short, if the front end insertion section 6A of work department side connector 6 is highlightedly configured in X direction from work department 3, and can be with confession
It is combined to tank side connector 9.
As shown in Figure 1, in the present embodiment, large capacity high-pressure gas tank 7 is set to the device of substrate repair apparatus 1
Outside.Supply pipeline 8 is connected to large capacity high-pressure gas tank 7.It should be noted that in the present embodiment, supply pipeline 8
Including supply these three parts pipeline 8A, 8B, 8C.Supply is removably connected to large capacity high-pressure gas tank 7 with pipeline 8A.
In supply the valve 16 used when tank is replaced is equipped with the downstream of pipeline 8A.Supply pipeline 8A and supply pipeline 8B sandwich valves
16 and connect.Above-mentioned open and close valve 10 is set to the downstream of supply pipeline 8B.Supply is pressed from both sides with pipeline 8B and supply pipeline 8C
It valve 10 and connects.Also, supply tank side connector 9 is set to the downstream of supply pipeline 8C.
As shown in Figure 1, supply tank side connector 9 is fixed in outside device.Specifically, supply tank side connector 9 can
It is fixed on the side wall etc. of the cover component (not shown) of the motion space of covering substrate repair apparatus 1.It should be noted that supply is used
The fixation object of tank side connector 9 is without being limited thereto.As shown in Fig. 2, supply tank side connector 9 has：It is installed on supply pipeline 8C
The Pipe installing portion 9A in downstream side, front end be inserted into portion 9B and fastener 9C.The front end of above-mentioned work department side connector 6 is inserted into
Portion 6A is inserted into front end and is inserted into portion 9B and in combination.Fastener 9C, which has, to be locked in the front end of above-mentioned work department side connector 6
The locking sphere for the slot that the peripheral surface of insertion section 6A is formed.
Therefore, as shown in Fig. 2, by making work department 3 be moved towards supply tank side connector 9 (towards the directions arrow Xr in figure)
Dynamic, the front end insertion section 6A of work department side connector 6 is inserted into portion 9B with the front end of tank side connector 9 with supply and is combined.It is tied releasing
When conjunction, by making work department 3 be directed away from from state shown in Fig. 3 direction (the arrow side XI in figure of supply tank side connector 9
To) mobile, it is combined to be released with tank side connector 9 with supply.
(action and effect of substrate repair apparatus)
Hereinafter, being illustrated to the functions and effects of substrate repair apparatus 1 of the present embodiment.In present embodiment
In, work department 3 has：Small gas tank 5, storage of raw materials gas simultaneously supply stored unstripped gas to laser CVD processing unit 4
Body；And work department side connector 6.In addition, in the present embodiment, the supply tank of large capacity high-pressure gas tank 7 will be connected to
Side connector 9 is fixedly configured at the position of not countermeasure set action.According to this structure, only make 24 He of X-direction guide portion
Work department 3 drives, and can be combined and be released the combination with supply tank side connector 9 by work department side connector 6.
In substrate repair apparatus 1 of the present embodiment, according to the residue gas scale of construction of small gas tank 5, control unit
11 drive control X-direction guide portions 24 and work department 3.Work department 3 makes X-axis side by X-direction driving mechanism (not shown)
It is moved in the X-axis direction to guide portion 24.The drive signal from control unit 11 is received by planer-type workbench driving portion 12,
X-direction guide portion 24 moves in the Y-axis direction.
In the present embodiment, it is built-in in work department side connector 6 when releasing and the combination of supply tank side connector 9
The automatic on/off valve 6C of internal flow path 6D is closed, therefore, work department side connector 6 is without being provided additionally with open and close control mechanism.
In the present embodiment, control unit 11 controls gantry according to the information-driven of the residue gas scale of construction of small gas tank 5
Formula workbench 2 and work department 3 make work department side connector 6 be incorporated into supply tank side connector 9.In addition, being connect releasing work department side
First 6 and when the supply combination of tank side connector 9, control unit 11 close the control of open and close valve 10.
(control method of substrate repair apparatus)
Then, using flow chart shown in Fig. 4, the control method of the substrate repair apparatus 1 of present embodiment is said
It is bright.
First, in the present embodiment, it is set as, small gas is inputted from pressure sensor (not shown) to control unit 11
The information of the residue gas scale of construction of tank 5.Control unit 11 judges whether the residue gas scale of construction of small gas tank 5 is predetermined amount or less (step
Rapid S1).
In step sl, if the residue gas scale of construction be predetermined amount hereinafter, if so that X-direction guide portion 24 is moved to specified position
(step S2).The specified position is for work department side connector 6 relative to the supply tank side connector 9 fixedly configured in X-axis side
Mutually opposed position upwards.
Then, make work department 3 mobile to X-direction (directions arrow Xr shown in Fig. 2), make work department side connector 6 and supply
(step S3) is combined to tank side connector 9.
In above-mentioned steps S3, in work department side connector 6 and supply under 9 bound state of tank side connector, control unit
The drive signal of open and close valve 10 is opened in 11 outputs, opens open and close valve 10.Then, for example, by open and close valve 10 open certain time and
After unstrpped gas is filled in small gas tank 5, open and close valve 10 (step S4) is closed.
In above-mentioned steps S4, after completing the filling to the unstrpped gas of small gas tank 5, make work department 3 to Fig. 3
In arrow X1 shown in direction movement, extract work department side connector 6 from supply tank side connector 9, release and combine (step S5).
It can when the residue gas scale of construction of small gas tank 5 drops to predetermined amount or less by using above-mentioned control method
Automatically to be fed from large capacity high-pressure gas tank 7.In such manner, it is possible to swimmingly to 5 base feed gas of small gas tank.
(effect of substrate repair apparatus)
In the substrate repair apparatus 1 of present embodiment, by be set as having moveable work department side connector 6 and by
It is fixed on the structure of the supply tank side connector 9 of the not position of countermeasure set, has the effect of being easy to be controlled.Therefore, have
There is the effect of the significantly operating time of the operator of reduction operation substrate repair apparatus 1.
The substrate repair apparatus 1 of present embodiment is the structure for having work department side connector 6 and supply tank side connector 9,
Therefore, it is possible to realize the equipment of work department 3 and the simplification of structure, lightweight.
Substrate repair apparatus 1 of the present embodiment need not have the flexible company relative to small gas tank 5
Hose is connect, therefore, it is possible to improve durability.In addition, in substrate repair apparatus 1 of the present embodiment, by working
The small gas tank 5 that need not be replaced is set in portion 3, and mechanism without setting gas receiver replacement etc. is spread inside and outside device
Replacement mechanism, simplification, cost effective and upkeep operation summary therefore, it is possible to realization device.In addition, in this reality
In the substrate repair apparatus 1 that the mode of applying is related to, for the supply of the processing gas of unstrpped gas etc., reduce human factor,
Have the effect of easily realizing automation.In the present embodiment, the supply of unstrpped gas is realized by control unit 11 etc.
Automation, but the supply step of unstrpped gas can also be manually carried out by operator.
(other embodiment)
Embodiment is illustrated above, it is to be understood that constitute a disclosed part for the above embodiment
It discusses and attached drawing does not limit the invention.It to those skilled in the art, can be from content disclosed above
Clearly learn various replacement embodiments, embodiment and application technology.
For example, in the above-described embodiment, to planer-type workbench 2 is illustrated as main part, but at this
In invention, other than planer-type workbench 2, additionally it is possible to using various mechanisms such as various detent mechanisms, robots arms.
In addition, in the above-described embodiment, to laser CVD processing unit 4 is illustrated as repairing treatment portion, but
The various repairing treatment units of consumption processing gas can be applied.Therefore, as processing gas, also it is not limited to CVD use
Unstrpped gas.Therefore, the gas of base-plate cleaning can be used gas with dealing with by the present invention.
In the substrate repair apparatus 1 of the above embodiment, the shift action of work department 3 is controlled by control unit 11, is opened
The on-off action of valve closing 10.But in the present invention, operator also can manually operate, it is such by manually into
The structure of row operation is also the application range of the present invention.In this case, it is preferred that have such as lower structure：Work as small gas
When the residue gas scale of construction of tank 5 drops to specified amount or less, operator is notified using the recognition unit of lamp flicker etc..
In the substrate repair apparatus 1 that the above embodiment is related to, be set as Fig. 2 and as shown in Figure 3 by plug with insert
The combining unit for the type that seat combines, but the structure of work department side connector 6 and supply tank side connector 9 is without being limited thereto, and can
Use the various connectors (combining unit) that can be combined, release.
Claims (7)
1. a kind of substrate repair apparatus, has：Main part；Work department, being arranged with respect to the main part can move；And
Repairing treatment portion is set to the work department, and the substrate repair apparatus is by the repairing treatment portion and uses processing gas
Body repairs the defect on the surface of repairing substrate, which is characterized in that
The work department has：Work department side tank stores processing gas and supplies the processing to the repairing treatment portion and uses
Gas；And work department side connector, processing gas can be imported to work department side tank,
It is used by pipeline and the tank connected supply of supply not interfering the position of the main part and the work department to be fixed with
Tank side connector,
The work department side connector can be combined or be released combination with tank side connector with the supply.
2. substrate repair apparatus according to claim 1, which is characterized in that
By making the work department be moved towards the supply tank side connector, the work department side connector and the supply tank
Side connector combines,
By making the work department be directed away from the direction movement of the supply tank side connector,
The work department side connector is released with tank side connector with the supply and is combined.
3. substrate repair apparatus according to claim 1, which is characterized in that
The work department is according to the residue gas scale of construction of work department side tank, into exercising the work department side connector and the supply
The action combined with tank side connector.
4. substrate repair apparatus according to claim 1, which is characterized in that
The main part is planer-type workbench, and the planer-type workbench has to be used for configuring the repairing of the repairing substrate
Substrate configures platform, and the X-Y axis directions that the work department can be made to configure platform with substrate along the repairing move.
5. substrate repair apparatus according to claim 1, which is characterized in that
Open and close valve is equipped in the pipeline,
The work department side connector is built-in with automatic on/off valve, when the work department side connector and supply tank side connector
When in conjunction with being released from, the automatic on/off valve closes internal flow path.
6. substrate repair apparatus according to claim 5, which is characterized in that
The substrate repair apparatus is also equipped with control unit,
The control unit carries out control as follows：
According to the information of the residue gas scale of construction of work department side tank, main part and the work department described in drive control and make institute
It states work department side connector to be combined with the supply with tank side connector, and is used with the supply releasing the work department side connector
When the combination of tank side connector, the open and close valve is closed.
7. substrate repair apparatus according to any one of claim 1 to 6, which is characterized in that
The repairing treatment portion carries out film process to the surface of repairing substrate,
The processing gas is the unstrpped gas for film forming.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017-042505 | 2017-03-07 | ||
| JP2017042505A JP2018146826A (en) | 2017-03-07 | 2017-03-07 | Substrate repair apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108570661A true CN108570661A (en) | 2018-09-25 |
Family
ID=63576754
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810180229.6A Withdrawn CN108570661A (en) | 2017-03-07 | 2018-03-05 | Substrate repair apparatus |
| CN201820303084.XU Expired - Fee Related CN207918950U (en) | 2017-03-07 | 2018-03-05 | Substrate repair apparatus |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820303084.XU Expired - Fee Related CN207918950U (en) | 2017-03-07 | 2018-03-05 | Substrate repair apparatus |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2018146826A (en) |
| KR (1) | KR20180102497A (en) |
| CN (2) | CN108570661A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006058269A (en) * | 2004-08-24 | 2006-03-02 | Matsushita Electric Ind Co Ltd | Lighting inspection device for display panel |
| JP2009092850A (en) * | 2007-10-05 | 2009-04-30 | Micronics Japan Co Ltd | Circuit defect repairing method and device of liquid crystal display |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3082716B2 (en) * | 1997-08-08 | 2000-08-28 | 日本電気株式会社 | Laser CVD apparatus and method |
| JP2005300940A (en) * | 2004-04-13 | 2005-10-27 | Sharp Corp | Substrate repairing method and repairing device, and substrate repaired by using the same |
| KR100822223B1 (en) * | 2006-08-16 | 2008-04-17 | 참앤씨(주) | Repair Apparatus For Flat Panel Display |
| JP2011219215A (en) * | 2010-04-08 | 2011-11-04 | Mitsubishi Electric Corp | Elevator device |
| JP2014019937A (en) * | 2012-07-23 | 2014-02-03 | Omron Corp | Laser processing device |
| JP2016112687A (en) * | 2014-12-10 | 2016-06-23 | キヤノン株式会社 | Inkjet recording apparatus |
| KR101738982B1 (en) * | 2015-06-08 | 2017-05-26 | 참엔지니어링(주) | Apparatus and Method for Repairing Substrate |
-
2017
- 2017-03-07 JP JP2017042505A patent/JP2018146826A/en active Pending
-
2018
- 2018-02-28 KR KR1020180024141A patent/KR20180102497A/en unknown
- 2018-03-05 CN CN201810180229.6A patent/CN108570661A/en not_active Withdrawn
- 2018-03-05 CN CN201820303084.XU patent/CN207918950U/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006058269A (en) * | 2004-08-24 | 2006-03-02 | Matsushita Electric Ind Co Ltd | Lighting inspection device for display panel |
| JP2009092850A (en) * | 2007-10-05 | 2009-04-30 | Micronics Japan Co Ltd | Circuit defect repairing method and device of liquid crystal display |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20180102497A (en) | 2018-09-17 |
| CN207918950U (en) | 2018-09-28 |
| JP2018146826A (en) | 2018-09-20 |
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| PB01 | Publication | ||
| PB01 | Publication | ||
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| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20180925 |
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| WW01 | Invention patent application withdrawn after publication |