JP2018146826A - Substrate repair apparatus - Google Patents
Substrate repair apparatus Download PDFInfo
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- JP2018146826A JP2018146826A JP2017042505A JP2017042505A JP2018146826A JP 2018146826 A JP2018146826 A JP 2018146826A JP 2017042505 A JP2017042505 A JP 2017042505A JP 2017042505 A JP2017042505 A JP 2017042505A JP 2018146826 A JP2018146826 A JP 2018146826A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1306—Details
- G02F1/1309—Repairing; Testing
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/179—Interconnections, e.g. wiring lines or terminals
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/861—Repairing
Abstract
Description
本発明は、基板表面に形成された配線パターンなどの欠陥を修正する基板修正装置に関する。 The present invention relates to a substrate correcting apparatus that corrects defects such as wiring patterns formed on a substrate surface.
液晶パネルや有機ＥＬ（Electro-Luminescence）パネルなどのディスプレイパネルは、配線パターンや絶縁膜などが形成された基板を備える。ディスプレイパネルの製造工程では、配線パターンや絶縁膜などの欠陥を修正するリペア処理が必要である。リペア処理としては、レーザ光により配線パターンのショート箇所の切断を行う除去加工や、レーザＣＶＤ（Chemical Vapor Deposition）技術により配線パターンや絶縁膜などの成膜を行う所謂ＣＶＤ加工がある。特許文献１には、表示装置の基板の表面に沿って移動する稼働部を備えた修正装置が開示されている。その稼働部には、除去加工を行うレーザ加工処理部やＣＶＤ加工を行うＣＶＤ処理部が搭載されている。これらレーザ加工処理部やＣＶＤ処理部は、稼働部とともに基板の表面に沿って移動して、この基板の欠陥箇所のリペア処理を行う。 A display panel such as a liquid crystal panel or an organic EL (Electro-Luminescence) panel includes a substrate on which a wiring pattern, an insulating film, and the like are formed. In the display panel manufacturing process, a repair process for correcting defects such as wiring patterns and insulating films is required. As the repair process, there are a removal process in which a short portion of a wiring pattern is cut by a laser beam, and a so-called CVD process in which a wiring pattern or an insulating film is formed by a laser CVD (Chemical Vapor Deposition) technique. Patent Document 1 discloses a correction device including an operation unit that moves along the surface of a substrate of a display device. A laser processing unit that performs removal processing and a CVD processing unit that performs CVD processing are mounted on the operation unit. The laser processing unit and the CVD processing unit move along the surface of the substrate together with the operating unit, and repair the defective portion of the substrate.
上記のＣＶＤ処理部は、成膜に必要な原料ガスなどの処理用ガスが必要である。ＣＶＤ処理部へ原料ガスなどを供給する方法としては、以下の二つの方法がある。第１の方法は、図５に示すように、可撓性を有する接続ホース１０１を用いて、ＣＶＤ機構１０２と、装置１０３の外に設置された大型のガスタンク１０４と、を接続する方法である。第２の方法は、ガスカートリッジを稼働部に搭載する方法である。 The above-described CVD processing unit requires a processing gas such as a source gas necessary for film formation. There are the following two methods for supplying a source gas or the like to the CVD processing unit. As shown in FIG. 5, the first method is a method of connecting the CVD mechanism 102 and a large gas tank 104 installed outside the apparatus 103 using a flexible connection hose 101. . The second method is a method of mounting the gas cartridge on the operating part.
しかしながら、上記第１の方法では、接続ホース１０１の耐久性、可動性、ならびに取り回しに問題がある。第1の方法では、接続ホース１０１が短寿命となり易い。第１の方法では、接続ホース１０１が消耗したときのメンテナンスが煩雑となる。第1の方法では、接続ホース１０１の取り回し空間を確保する必要があり、装置１０３の大型化を招く虞がある。第1の方法では、接続ホース１０１が稼働部に追従する際に、接続ホース１０１が基板上に落下することを防止するための図示しない支持手段が必要となり、装置１０３の大型化ならびに複雑化を招く虞がある。 However, the first method has problems in durability, mobility and handling of the connection hose 101. In the first method, the connection hose 101 tends to have a short life. In the first method, maintenance when the connection hose 101 is consumed becomes complicated. In the first method, it is necessary to secure a handling space for the connection hose 101, which may increase the size of the device 103. In the first method, when the connection hose 101 follows the operating part, a support means (not shown) for preventing the connection hose 101 from falling on the substrate is required, which increases the size and complexity of the apparatus 103. There is a risk of inviting.
上記第２の方法では、稼働部への搭載重量を大きくできないため、ガスカートリッジの重量ならびに容量が制限される。このため、第２の方法では、稼働部に搭載したガスカートリッジの交換頻度が高くなり、生産性を低下させるという課題がある。ガスカートリッジの交換作業としては、稼働部からガスカートリッジを取り外し、そのガスカートリッジを装置の外へ搬送し、原料ガスを充填した新たな交換用のガスカートリッジを搬送して稼働部に取り付けるという煩雑な作業を要する。 In the second method, the weight and capacity of the gas cartridge are limited because the weight mounted on the operating part cannot be increased. For this reason, in the 2nd method, the exchange frequency of the gas cartridge mounted in the operation part becomes high, and there exists a subject that productivity falls. The replacement of the gas cartridge is a complicated process of removing the gas cartridge from the operating section, transporting the gas cartridge out of the apparatus, transporting a new replacement gas cartridge filled with source gas, and attaching it to the operating section. Requires work.
本発明は、上記の課題に鑑みてなされたものであって、稼働部側タンクの交換作業を省略でき、修正用基板の修正処理に用いる処理用ガスの供給を容易に行える基板修正装置を提供することを目的とする。 The present invention has been made in view of the above problems, and provides a substrate correction apparatus that can omit the operation of replacing the working part side tank and can easily supply the processing gas used for the correction processing of the correction substrate. The purpose is to do.
上述した課題を解決し、目的を達成するために、本発明の態様は、本体部と、この本体部に対して移動可能に設けられた稼働部と、この稼働部に設けられた修正処理部と、を備え、上記修正処理部で処理用ガスを用いて修正用基板の表面の欠陥を修正する基板修正装置であって、上記稼働部は、処理用ガスを貯留して上記修正処理部へ供給する稼働部側タンクと、この稼働部側タンクへ処理用ガスを導入可能な稼働部側継ぎ手と、を備え、本体部と稼働部に干渉しない位置に、供給用タンクに配管で接続された供給用タンク側継ぎ手を固定し、上記稼働部側継ぎ手は、上記供給用タンク側継ぎ手に対して結合および結合解除が可能であることを特徴とする。 In order to solve the above-described problems and achieve the object, an aspect of the present invention includes a main body, an operating unit that is movable with respect to the main body, and a correction processing unit that is provided in the operating unit. And the correction processing unit corrects defects on the surface of the correction substrate using the processing gas, wherein the operating unit stores the processing gas and supplies the correction processing unit to the correction processing unit. The working part side tank to be supplied and the working part side joint capable of introducing the processing gas into the working part side tank are connected to the supply tank by piping at a position not interfering with the main body part and the working part. The supply tank side joint is fixed, and the operating part side joint is capable of being coupled and uncoupled to the supply tank side joint.
上記態様として、上記稼働部側継ぎ手は、稼働部を上記供給用タンク側継ぎ手に向けて移動させることにより、供給用タンク側継ぎ手に結合し、稼働部を供給用タンク側継ぎ手から遠ざかる方向に移動させることにより、供給用タンク側継ぎ手から結合が解除される構成とすることが好ましい。 As the above aspect, the operating part side joint is coupled to the supplying tank side joint by moving the operating part toward the supplying tank side joint, and the operating part is moved away from the supplying tank side joint. It is preferable that the coupling is released from the supply tank side joint.
上記態様として、稼働部は、稼働部側タンクの残留ガス量に応じて、稼働部側継ぎ手を供給用タンク側継ぎ手に結合させる動作を行うことが好ましい。 As said aspect, it is preferable that an operation part performs the operation | movement which couple | bonds an operation part side joint with a supply tank side joint according to the residual gas amount of an operation part side tank.
上記態様として、本体部は、修正用基板を配置する修正用基板配置テーブルを備え、稼働部を修正用基板配置テーブルのＸ−Ｙ軸方向に移動可能にするガントリステージであることが好ましい。 As the above aspect, it is preferable that the main body portion is a gantry stage that includes a correction substrate arrangement table on which the correction substrate is arranged, and that allows the operating unit to move in the XY axis direction of the correction substrate arrangement table.
上記態様として、配管に開閉バルブを設け、稼働部側継ぎ手は、供給用タンク側継ぎ手との結合が解除されたときに、内部流路を閉じる自動開閉バルブを内蔵する構成が好ましい。 As the above aspect, it is preferable that an open / close valve is provided in the pipe, and the operating part side joint has a built-in automatic open / close valve that closes the internal flow path when the connection with the supply tank side joint is released.
上記態様として、制御部を備え、この制御部は、稼働部側タンクの残留ガス量の情報に応じて本体部および稼働部を駆動制御して、稼働部側継ぎ手を供給用タンク側継ぎ手に結合させ、稼働部側継ぎ手と供給用タンク側継ぎ手との結合を解除させるときに、上記開閉バルブを閉じる制御を行うことが好ましい。 As the above aspect, a control unit is provided, and the control unit drives and controls the main body unit and the operating unit according to the information on the residual gas amount of the operating unit side tank, and couples the operating unit side joint to the supply tank side joint. It is preferable to perform control to close the opening / closing valve when releasing the connection between the operating part side joint and the supply tank side joint.
上記態様として、修正処理部は、修正用基板の表面に成膜処理を行い、処理用ガスは成膜に用いる原料ガスであることが好ましい。 As the above aspect, the correction processing unit preferably performs a film forming process on the surface of the correction substrate, and the processing gas is preferably a raw material gas used for film forming.
本発明に係る基板修正装置によれば、メンテナンスの頻度が低く、処理用基板の修正処理に用いる処理用ガスの供給を容易に行える基板修正装置を提供することができる。 According to the substrate correction apparatus of the present invention, it is possible to provide a substrate correction apparatus that can be supplied with the processing gas used for the correction processing of the processing substrate with low frequency of maintenance.
以下に、本発明の実施の形態に係る基板修正装置の詳細を図面に基づいて説明する。但し、図面は模式的なものであり、各部材の寸法や寸法の比率や形状などは現実のものと異なることに留意すべきである。また、図面相互間においても互いの寸法の関係や比率や形状が異なる部分が含まれている。 Below, the detail of the board | substrate correction apparatus which concerns on embodiment of this invention is demonstrated based on drawing. However, it should be noted that the drawings are schematic, and the dimensions, ratios and shapes of the members are different from actual ones. In addition, the drawings include portions having different dimensional relationships, ratios, and shapes.
ここで、実施の形態の説明に先駆けて、修正処理について簡単に説明する。以下に説明する実施の形態では、修正処理の一例としてレーザＣＶＤ法による成膜処理を適用した例である。この成膜処理として、具体的には、レーザＣＶＤ法により成膜を行って配線同士の接続を行う加工や、窒化シリコン膜などの絶縁膜の形成を挙げることができる。レーザＣＶＤ法により修正処理を行う場合、処理用ガスを用いる。なお、本発明は、修正用基板の修正処理にガスを消費する各種の修正手段に適用可能である。 Here, prior to the description of the embodiment, the correction process will be briefly described. In the embodiment described below, a film forming process by a laser CVD method is applied as an example of a correction process. Specific examples of the film forming process include a process of forming a film by a laser CVD method and connecting wirings, and forming an insulating film such as a silicon nitride film. When the correction process is performed by the laser CVD method, a processing gas is used. The present invention can be applied to various correction means that consume gas in the correction processing of the correction substrate.
修正用基板としては、各種のＦＰＤ（Flat Panel Display）を構成する基板を適用できる。修正用基板として、具体的には、例えば、液晶パネルのＴＦＴ基板や、有機ＥＬパネルの、電子・正孔注入電極などの各種配線パターンが形成された基板などを挙げることができる。 As the correction substrate, substrates constituting various FPDs (Flat Panel Displays) can be applied. Specific examples of the correction substrate include a TFT substrate of a liquid crystal panel and a substrate on which various wiring patterns such as an electron / hole injection electrode of an organic EL panel are formed.
［実施の形態］
（基板修正装置の構成）
以下、図１〜図３を用いて、本発明の実施の形態に係る基板修正装置１の構成を説明する。図１に示すように、基板修正装置１は、本体部としてのガントリステージ（位置決め機構）２と、稼働部３と、修正処理部としてのレーザＣＶＤ処理部４と、稼働部側タンクとしての小型ガスタンク５と、稼働部側継ぎ手６と、供給用タンクとしての大容量高圧ガスタンク７に接続された配管としての供給用配管８と、供給用タンク側継ぎ手９と、開閉バルブ１０と、制御部１１と、ガントリステージ駆動部１２と、を備える。なお、小型ガスタンク５は、残留ガス量を検知する図示しない圧力センサを備えている。大容量高圧ガスタンク７は、レーザＣＶＤ処理部４で消費する原料ガスの供給源である。
[Embodiment]
(Configuration of substrate correction device)
Hereinafter, the structure of the board | substrate correction apparatus 1 which concerns on embodiment of this invention is demonstrated using FIGS. 1-3. As shown in FIG. 1, a substrate correction apparatus 1 includes a gantry stage (positioning mechanism) 2 as a main body, an operating unit 3, a laser CVD processing unit 4 as a correction processing unit, and a compact as an operating unit side tank. Gas tank 5, working part side joint 6, supply pipe 8 connected to a large-capacity high-pressure gas tank 7 as a supply tank, supply tank side joint 9, opening / closing valve 10, and control part 11 And a gantry stage drive unit 12. The small gas tank 5 includes a pressure sensor (not shown) that detects the amount of residual gas. The large-capacity high-pressure gas tank 7 is a supply source for the source gas consumed by the laser CVD processing unit 4.
稼働部３は、ガントリステージ２に搭載されている。このガントリステージ２は、後述する修正用基板１３を載せる、修正用基板配置テーブルとしてのテーブル２１を備えている。ガントリステージ２は、稼働部３を、テーブル２１の上方において、図中Ｘｇで示すＸ軸方向と図中Ｙｇで示すＹ軸方向に移動させることができる。 The operating unit 3 is mounted on the gantry stage 2. The gantry stage 2 includes a table 21 as a correction substrate arrangement table on which a correction substrate 13 described later is placed. The gantry stage 2 can move the operating unit 3 above the table 21 in the X-axis direction indicated by Xg in the figure and the Y-axis direction indicated by Yg in the figure.
ガントリステージ２は、一対のＹ軸方向ガイド部２２，２３と、Ｘ軸方向ガイド部２４と、を備える。一対のＹ軸方向ガイド部２２，２３は、テーブル２１のＸ軸方向の両側部上に配置され、それぞれがＹ軸方向に沿って延びる。Ｘ軸方向ガイド部２４は、一対のＹ軸方向ガイド部２２，２３に対して架け渡され、Ｘ軸方向に沿って延びる。Ｘ軸方向ガイド部２４は、一対のＹ軸方向ガイド部２２，２３に対して、矢印Ｙｇで示すＹ軸方向に移動可能に支持されている。Ｘ軸方向ガイド部２４は、制御部１１からの駆動信号に基づいてガントリステージ駆動部１２により矢印Ｙｇで示すＹ軸方向に移動する。 The gantry stage 2 includes a pair of Y-axis direction guide portions 22 and 23 and an X-axis direction guide portion 24. The pair of Y-axis direction guide portions 22 and 23 are disposed on both side portions of the table 21 in the X-axis direction, and each extend along the Y-axis direction. The X-axis direction guide portion 24 is bridged over the pair of Y-axis direction guide portions 22 and 23 and extends along the X-axis direction. The X-axis direction guide portion 24 is supported so as to be movable in the Y-axis direction indicated by the arrow Yg with respect to the pair of Y-axis direction guide portions 22 and 23. The X-axis direction guide unit 24 is moved in the Y-axis direction indicated by the arrow Yg by the gantry stage drive unit 12 based on the drive signal from the control unit 11.
本実施の形態では、稼働部３は矩形のプレートで構成されている。なお、稼働部３の形状、構造はこれに限定されるものではない。稼働部３は、Ｘ軸方向ガイド部２４に対して、Ｘ軸方向に移動可能に支持されている。稼働部３は、制御部１１からの駆動信号に基づいて、図示しないＸ軸方向駆動機構により、矢印Ｘｇで示すようにＸ軸方向に移動される。稼働部３は、Ｘ軸方向ガイド部２４がＹ軸方向ガイド部２２，２３に沿って移動することにより、Ｙ軸方向に移動する。したがって、テーブル２１の上方において、稼働部３は、Ｘ−Ｙ軸方向の任意の位置に移動可能である。 In the present embodiment, the operating unit 3 is configured by a rectangular plate. In addition, the shape and structure of the operation part 3 are not limited to this. The operating unit 3 is supported so as to be movable in the X-axis direction with respect to the X-axis direction guide unit 24. The operating unit 3 is moved in the X-axis direction as indicated by an arrow Xg by an X-axis direction driving mechanism (not shown) based on a drive signal from the control unit 11. The operating unit 3 moves in the Y-axis direction when the X-axis direction guide unit 24 moves along the Y-axis direction guide units 22 and 23. Therefore, above the table 21, the operating part 3 can be moved to any position in the XY axis direction.
図１に示すように、レーザＣＶＤ処理部４は、テーブル２１上に配置された修正用基板１３の表面の欠陥を、レーザＣＶＤ法にて成膜することにより修正を行う。レーザＣＶＤ処理部４は、図示しない、レーザ光源、各種光学系などを備える。 As shown in FIG. 1, the laser CVD processing unit 4 corrects a defect on the surface of the correction substrate 13 disposed on the table 21 by forming a film using a laser CVD method. The laser CVD processing unit 4 includes a laser light source, various optical systems, and the like (not shown).
小型ガスタンク５は、レーザＣＶＤ処理部４に対してＸ軸方向に隣接するように配置されている。そして、小型ガスタンク５は、レーザＣＶＤ処理部４に連通するように結合パイプ１４で接続されている。小型ガスタンク５は、処理用ガスとしての原料ガスを蓄積し、必要に応じてレーザＣＶＤ処理部４へ原料ガスを供給する。小型ガスタンク５は、稼働部３の円滑な移動を低下させない程度の重さならびに容量が設定されている。 The small gas tank 5 is disposed adjacent to the laser CVD processing unit 4 in the X-axis direction. The small gas tank 5 is connected by a coupling pipe 14 so as to communicate with the laser CVD processing unit 4. The small gas tank 5 accumulates a source gas as a processing gas, and supplies the source gas to the laser CVD processing unit 4 as necessary. The small gas tank 5 is set to have a weight and capacity that do not reduce the smooth movement of the operating unit 3.
稼働部側継ぎ手６は、小型ガスタンク５におけるレーザＣＶＤ処理部４と反対側に隣接するように配置されている。稼働部側継ぎ手６は、小型ガスタンク５に連通するように結合パイプ１５で接続されている。なお、結合パイプ１５は剛性を有し稼働部側継ぎ手６が揺動しないように支持することが好ましい。 The operating part side joint 6 is arranged so as to be adjacent to the side opposite to the laser CVD processing part 4 in the small gas tank 5. The operating part side joint 6 is connected by a coupling pipe 15 so as to communicate with the small gas tank 5. In addition, it is preferable that the coupling pipe 15 has rigidity and is supported so that the operating part side joint 6 does not swing.
図１および図２に示すように、稼働部側継ぎ手６の先端挿入部６Ａは、稼働部３から、図中Ｘｒで示すＸ軸方向の一方側に向けて突出するように配置されている。この稼働部側継ぎ手６は、稼働部３に対して揺動しないように、図示しない固定手段で稼働部３に固定することが好ましい。 As shown in FIGS. 1 and 2, the distal end insertion portion 6A of the working portion side joint 6 is disposed so as to protrude from the working portion 3 toward one side in the X-axis direction indicated by Xr in the drawing. The operating part side joint 6 is preferably fixed to the operating part 3 by a fixing means (not shown) so as not to swing with respect to the operating part 3.
図２に示すように、稼働部側継ぎ手６は、上記先端挿入部６Ａの基部側で結合パイプ１５に装着されるパイプ装着部６Ｂを有する。パイプ装着部６Ｂは、稼働部側継ぎ手６が供給用タンク側継ぎ手９と結合していないときに、内部流路６Ｄを閉じる自動開閉バルブ６Ｃが内蔵されている。 As shown in FIG. 2, the working part side joint 6 has a pipe attachment part 6B attached to the coupling pipe 15 on the base side of the tip insertion part 6A. The pipe mounting portion 6B includes an automatic open / close valve 6C that closes the internal flow path 6D when the operating portion side joint 6 is not coupled to the supply tank side joint 9.
レーザＣＶＤ処理部４と小型ガスタンク５と稼働部側継ぎ手６との位置関係は、上述の構成でなくともよい。要は、稼働部側継ぎ手６の先端挿入部６Ａが稼働部３からＸ方向に沿って突出して配置され、供給用タンク側継ぎ手９と結合可能であればよい。 The positional relationship among the laser CVD processing unit 4, the small gas tank 5, and the working unit side joint 6 may not be the above-described configuration. In short, it is only necessary that the distal end insertion portion 6A of the working portion side joint 6 is arranged so as to protrude from the working portion 3 along the X direction and can be coupled to the supply tank side joint 9.
図１に示すように、本実施の形態では、大容量高圧ガスタンク７は、基板修正装置１の装置外に設置する。大容量高圧ガスタンク７には、供給用配管８が接続されている。なお、本実施の形態では、供給用配管８は、供給用配管８Ａ，８Ｂ，８Ｃの３つの部分を含む。供給用配管８Ａは、大容量高圧ガスタンク７に着脱可能に接続されている。供給用配管８Ａの下流端には、タンク交換時に用いるバルブ１６が設けられている。供給用配管８Ａには、バルブ１６を挟んで供給用配管８Ｂが接続されている。供給用配管８Ｂの下流端には、上記開閉バルブ１０が設けられている。供給用配管８Ｂには、開閉バルブ１０を挟んで供給用配管８Ｃが接続されている。そして、供給用配管８Ｃの下流端には、供給用タンク側継ぎ手９が設けられている。 As shown in FIG. 1, in this embodiment, the large-capacity high-pressure gas tank 7 is installed outside the substrate correction apparatus 1. A supply pipe 8 is connected to the large-capacity high-pressure gas tank 7. In the present embodiment, the supply pipe 8 includes three portions of supply pipes 8A, 8B, and 8C. The supply pipe 8 </ b> A is detachably connected to the large-capacity high-pressure gas tank 7. A valve 16 used for tank replacement is provided at the downstream end of the supply pipe 8A. A supply pipe 8B is connected to the supply pipe 8A with a valve 16 interposed therebetween. The opening / closing valve 10 is provided at the downstream end of the supply pipe 8B. A supply pipe 8C is connected to the supply pipe 8B with the opening / closing valve 10 interposed therebetween. A supply tank side joint 9 is provided at the downstream end of the supply pipe 8C.
図１に示すように、供給用タンク側継ぎ手９は、装置外に固定されている。具体的には、供給用タンク側継ぎ手９は、基板修正装置１の動作空間を覆う、図示しないカバー部材の側壁などに固定することができる。なお、供給用タンク側継ぎ手９の固定先はこれに限定されるものではない。図２に示すように、供給用タンク側継ぎ手９は、供給用配管８Ｃの下流端に装着する配管装着部９Ａと、先端被挿入部９Ｂと、係止部９Ｃと、を有している。先端被挿入部９Ｂには、上記稼働部側継ぎ手６の先端挿入部６Ａが挿入して結合する。係止部９Ｃは、上記稼働部側継ぎ手６の先端挿入部６Ａの外周面に形成された溝に係止される係止用球体を有する。 As shown in FIG. 1, the supply tank side joint 9 is fixed outside the apparatus. Specifically, the supply tank side joint 9 can be fixed to a side wall of a cover member (not shown) that covers the operation space of the substrate correction apparatus 1. The fixing destination of the supply tank side joint 9 is not limited to this. As shown in FIG. 2, the supply tank side joint 9 has a pipe mounting portion 9A to be mounted on the downstream end of the supply piping 8C, a tip insertion portion 9B, and a locking portion 9C. The tip insertion portion 6A of the operating portion side joint 6 is inserted and joined to the tip insertion portion 9B. The locking portion 9 </ b> C has a locking sphere that is locked in a groove formed on the outer peripheral surface of the distal end insertion portion 6 </ b> A of the operating portion side joint 6.
したがって、図２に示すように、稼働部側継ぎ手６は、稼働部３を供給用タンク側継ぎ手９に向けて（図中矢印Ｘｒ方向に向けて）移動させることにより、先端挿入部６Ａが供給用タンク側継ぎ手９の先端被挿入部９Ｂに結合する。結合を解除するには、図３に示す状態から、稼働部３を供給用タンク側継ぎ手９から遠ざかる方向（図中矢印Ｘｌ方向）に移動させることにより、供給用タンク側継ぎ手９から結合が解除される。 Therefore, as shown in FIG. 2, the operating portion side joint 6 is supplied by the distal end insertion portion 6A by moving the operating portion 3 toward the supply tank side joint 9 (in the direction of the arrow Xr in the figure). The tank side joint 9 is coupled to the tip insertion portion 9B. To release the coupling, the coupling is released from the supply tank side joint 9 by moving the operating part 3 away from the supply tank side joint 9 (in the direction of the arrow Xl in the figure) from the state shown in FIG. Is done.
（基板修正装置の動作および作用）
以下、本実施の形態に係る基板修正装置１の作用および効果について説明する。本実施の形態では、稼働部３が、原料ガスを貯留してレーザＣＶＤ処理部４へ供給する小型ガスタンク５と稼働部側継ぎ手６とを備える。また、この実施の形態では、大容量高圧ガスタンク７に接続された供給用タンク側継ぎ手９を、装置動作を干渉しない位置に固定配置している。このような構成により、Ｘ軸方向ガイド部２４と稼働部３を駆動させるだけで、稼働部側継ぎ手６と供給用タンク側継ぎ手９とを結合し、その結合を解除することができる。
(Operation and action of the board correction device)
Hereinafter, the operation and effect of the substrate correcting apparatus 1 according to the present embodiment will be described. In the present embodiment, the operating unit 3 includes a small gas tank 5 that stores the raw material gas and supplies it to the laser CVD processing unit 4 and an operating unit side joint 6. In this embodiment, the supply tank side joint 9 connected to the large-capacity high-pressure gas tank 7 is fixedly arranged at a position where the operation of the apparatus does not interfere. With such a configuration, the operating part side joint 6 and the supply tank side joint 9 can be coupled and released by simply driving the X-axis direction guide part 24 and the working part 3.
本実施の形態に係る基板修正装置１では、小型ガスタンク５の残留ガス量に応じて、制御部１１が、Ｘ軸方向ガイド部２４と稼働部３を駆動制御する。稼働部３は、図示しないＸ軸方向駆動機構により、Ｘ軸方向ガイド部２４をＸ軸方向に移動する。Ｘ軸方向ガイド部２４は、制御部１１からの駆動信号をガントリステージ駆動部１２が受けることにより、Ｙ軸方向に移動する。 In the substrate correction apparatus 1 according to the present embodiment, the control unit 11 drives and controls the X-axis direction guide unit 24 and the operating unit 3 in accordance with the residual gas amount in the small gas tank 5. The operating unit 3 moves the X-axis direction guide unit 24 in the X-axis direction by an X-axis direction drive mechanism (not shown). The X-axis direction guide unit 24 moves in the Y-axis direction when the gantry stage drive unit 12 receives a drive signal from the control unit 11.
本実施の形態では、稼働部側継ぎ手６に、供給用タンク側継ぎ手９との結合が解除されたときに、内部流路６Ｄを閉じる自動開閉バルブ６Ｃを内蔵するため、稼働部側継ぎ手６に別途開閉制御機構を備える必要がない。 In the present embodiment, since the automatic opening / closing valve 6C that closes the internal flow path 6D when the connection with the supply tank side joint 9 is released is connected to the working part side joint 6, the working part side joint 6 includes There is no need to provide a separate opening / closing control mechanism.
本実施の形態では、制御部１１が、小型ガスタンク５の残留ガス量の情報に応じてガントリステージ２および稼働部３を駆動制御して、稼働部側継ぎ手６を供給用タンク側継ぎ手９に結合させる。また、制御部１１は、稼働部側継ぎ手６と供給用タンク側継ぎ手９との結合を解除させるときに、開閉バルブ１０を閉じる制御を行う。 In the present embodiment, the control unit 11 drives and controls the gantry stage 2 and the operating unit 3 according to the information on the residual gas amount in the small gas tank 5, and couples the operating unit side joint 6 to the supply tank side joint 9. Let In addition, the control unit 11 performs control for closing the opening / closing valve 10 when the coupling between the working unit side joint 6 and the supply tank side joint 9 is released.
（基板修正装置の制御方法）
次に、図４に示すフローチャートを用いて、本実施の形態に係る基板修正装置１の制御方法について説明する。
(Control method of substrate correction device)
Next, the control method of the board | substrate correction apparatus 1 which concerns on this Embodiment is demonstrated using the flowchart shown in FIG.
まず、本実施の形態では、小型ガスタンク５の残留ガス量の情報が図示しない圧力センサから制御部１１に入力されるように設定されている。制御部１１は、小型タンク５の残留ガス量が所定量以下である否かを判定する（ステップＳ１）。 First, in the present embodiment, it is set so that information on the residual gas amount in the small gas tank 5 is input to the control unit 11 from a pressure sensor (not shown). The control part 11 determines whether the residual gas amount of the small tank 5 is below a predetermined amount (step S1).
ステップＳ１で残留ガス量が所定量以下である場合は、Ｘ軸方向ガイド部２４を定位置に移動させる（ステップＳ２）。この定位置は、稼働部側継ぎ手６が、固定配置された供給用タンク側継ぎ手９に対して、Ｘ軸方向において互いに対峙するような位置である。 If the residual gas amount is less than or equal to the predetermined amount in step S1, the X-axis direction guide portion 24 is moved to a fixed position (step S2). This fixed position is a position where the operating part side joint 6 faces each other in the X-axis direction with respect to the supply tank side joint 9 fixedly arranged.
次に、稼働部３をＸ軸方向（図２に示す矢印Ｘｒ方向）に移動させて、稼働部側継ぎ手６を供給用タンク側継ぎ手９に結合させる（ステップＳ３）。 Next, the operating part 3 is moved in the X-axis direction (arrow Xr direction shown in FIG. 2), and the operating part side joint 6 is coupled to the supply tank side joint 9 (step S3).
上記ステップＳ３で稼働部側継ぎ手６と供給用タンク側継ぎ手９とが結合した状態で、制御部１１は開閉バルブ１０を開ける駆動信号を出力して開閉バルブ１０を開ける。そして、例えば、開閉バルブ１０を一定時間開けて小型ガスタンク５に原料ガスを充填した後、開閉バルブ１０を閉じる（ステップＳ４）。 In the state where the operating part side joint 6 and the supply tank side joint 9 are coupled in step S3, the control unit 11 outputs a drive signal for opening the opening / closing valve 10 to open the opening / closing valve 10. Then, for example, the opening / closing valve 10 is opened for a certain time to fill the small gas tank 5 with the raw material gas, and then the opening / closing valve 10 is closed (step S4).
上記ステップＳ４で小型ガスタンク５への原料ガスの充填が終了した後、図３に矢印Ｘｌで示す方向に稼働部３を移動させて、稼働部側継ぎ手６を供給用タンク側継ぎ手９から抜いて結合を解除させる（ステップＳ５）。 After the filling of the source gas into the small gas tank 5 is completed in step S4, the operating part 3 is moved in the direction indicated by the arrow Xl in FIG. 3, and the operating part side joint 6 is removed from the supply tank side joint 9. The connection is released (step S5).
上述した制御方法を用いることにより、小型ガスタンク５の残留ガス量が所定量以下に低下した場合は、自動的に大容量高圧ガスタンク７からの補給が可能である。このようにして、小型ガスタンク５へ原料ガスを円滑に供給できる。 By using the control method described above, when the amount of residual gas in the small gas tank 5 falls below a predetermined amount, replenishment from the large-capacity high-pressure gas tank 7 is possible automatically. In this way, the raw material gas can be smoothly supplied to the small gas tank 5.
（基板修正装置の効果）
本実施の形態に係る基板修正装置１では、移動可能な稼働部側継ぎ手６と、装置に干渉しない位置に固定された供給用タンク側継ぎ手９と、を備える構成としたことにより、制御を容易にする効果がある。したがって、基板修正装置１を操作するオペレータの手間を大幅に削減する効果がある。
(Effect of the board correction device)
In the substrate correction apparatus 1 according to the present embodiment, control is facilitated by the configuration including the movable working side joint 6 and the supply tank side joint 9 fixed at a position not interfering with the apparatus. Has the effect of Therefore, there is an effect that the labor of the operator who operates the substrate correcting apparatus 1 is greatly reduced.
本実施の形態に係る基板修正装置１は、稼働部側継ぎ手６と供給用タンク側継ぎ手９を備える構成であるため、稼働部３の装備ならびに構造の簡素化、軽量化を達成できる。 Since the substrate correction apparatus 1 according to the present embodiment is configured to include the operating part side joint 6 and the supply tank side joint 9, it is possible to achieve simplification and weight reduction of the equipment and structure of the operating part 3.
本実施の形態に係る基板修正装置１は、小型ガスタンク５に対して可撓性を有する接続ホースを必要としないため、耐久性を向上できる。また、本実施の形態に係る基板修正装置１では、稼働部３に交換を要しない小型ガスタンク５を設置したことにより、カートリッジ交換用の機構など装置の内外に亘る交換機構を設けることがないため、装置の簡素化、低コスト化、および保守作業の簡易化を達成できる。さらに、本実施の形態に係る基板修正装置１では、原料ガスなどの処理用ガスの供給の人的要因を低減させ、自動化することを容易にする効果がある。本実施の形態では、制御部１１などにより、原料ガスの供給の自動化を図ったが、原料ガスの供給工程をオペレータによる手動で行うことも勿論可能である。 Since the board | substrate correction apparatus 1 which concerns on this Embodiment does not require the connection hose which has flexibility with respect to the small gas tank 5, it can improve durability. Further, in the substrate correcting apparatus 1 according to the present embodiment, since the small gas tank 5 that does not need to be replaced is installed in the operating unit 3, there is no exchange mechanism that extends inside and outside the apparatus, such as a mechanism for cartridge replacement. Therefore, simplification of the apparatus, cost reduction, and simplification of maintenance work can be achieved. Furthermore, the substrate correction apparatus 1 according to the present embodiment has an effect of facilitating automation by reducing human factors for supplying processing gas such as raw material gas. In the present embodiment, the supply of the source gas is automated by the control unit 11 or the like, but it is of course possible to manually perform the source gas supply process by an operator.
（その他の実施の形態）
以上、実施の形態について説明したが、これら実施の形態の開示の一部をなす論述および図面はこの発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施の形態、実施例および運用技術が明らかとなろう。
(Other embodiments)
Although the embodiments have been described above, it should not be understood that the descriptions and drawings constituting a part of the disclosure of these embodiments limit the present invention. From this disclosure, various alternative embodiments, examples and operational techniques will be apparent to those skilled in the art.
例えば、上記した実施の形態では、本体部としてガントリステージ２を適用して説明したが、本発明では、ガントリステージ２以外に各種の位置決め機構、ロボットアームなど各種の機構を採用できる。 For example, in the above-described embodiment, the gantry stage 2 is applied as the main body. However, in the present invention, various mechanisms such as various positioning mechanisms and robot arms can be employed in addition to the gantry stage 2.
また、上記した実施の形態では、修正処理部としてレーザＣＶＤ処理部４を適用して説明したが、処理用ガスを消費する各種の修正処理手段を適用することができる。このため、処理用ガスとしてもＣＶＤ用の原料ガスに限定されるものではない。したがって、本発明は、処理用ガスとして、基板洗浄用のガスを適用することも可能である。 In the above-described embodiment, the laser CVD processing unit 4 is applied as the correction processing unit. However, various correction processing units that consume processing gas can be applied. Therefore, the processing gas is not limited to the CVD source gas. Therefore, the present invention can also apply a substrate cleaning gas as the processing gas.
上記した実施の形態に係る基板修正装置１では、制御部１１で稼働部３の移動動作、開閉バルブ１０の開閉動作を制御する。しかし、本発明ではオペレータが手動で操作することもでき、このような手動により操作を行う構成も本発明の適用範囲である。この場合、小型ガスタンク５の残留ガス量が所定量以下に低下したときに、ランプ点灯などの認識手段を用いてオペレータに知らせる構成を備えることが好ましい。 In the substrate correction apparatus 1 according to the above-described embodiment, the control unit 11 controls the movement operation of the operation unit 3 and the opening / closing operation of the opening / closing valve 10. However, in the present invention, an operator can also manually operate, and such a configuration in which the operation is performed manually is also within the scope of the present invention. In this case, it is preferable to provide a configuration in which when the residual gas amount in the small gas tank 5 falls below a predetermined amount, the operator is notified using recognition means such as lamp lighting.
上記した実施の形態に係る基板修正装置１では、図２および図３に示すようなプラグとソケットを結合するタイプの結合手段としたが、稼働部側継ぎ手６および供給用タンク側継ぎ手９の構成はこれらに限定されるものでなく、各種の結合、解除の可能な継ぎ手（結合手段）を用いることができる。 In the substrate correcting apparatus 1 according to the above-described embodiment, the connecting means of the type for connecting the plug and the socket as shown in FIGS. 2 and 3 is used. However, the configuration of the working part side joint 6 and the supply tank side joint 9 is used. However, the present invention is not limited to these, and various types of couplings (coupling means) capable of coupling and releasing can be used.
１ 基板修正装置
２ ガントリステージ（本体部）
３ 稼働部
４ レーザＣＶＤ処理部（修正処理部）
５ 小型ガスタンク（稼働部側タンク）
６ 稼働部側継ぎ手
６Ａ 先端挿入部
６Ｂ パイプ装着部
６Ｃ 自動開閉バルブ
６Ｄ 内部流路
７大容量高圧ガスタンク（供給用タンク）
８ 供給用配管（配管）
８Ａ，８Ｂ，８Ｃ 供給用配管
９ 供給用タンク側継ぎ手
９Ａ 配管装着部
９Ｂ 先端被挿入部
９Ｃ 係止部
１０ 開閉バルブ
１１ 制御部
１２ ガントリステージ駆動部
１３ 修正用基板
１４，１５ 結合パイプ
２１ テーブル（修正基板配置テーブル）
２２，２３ Ｙ軸方向ガイド部
２４ Ｘ軸方向ガイド部
1 Substrate correction device 2 Gantry stage (main part)
3 Operating section 4 Laser CVD processing section (correction processing section)
5 Small gas tank (working part side tank)
6 Working part side joint 6A Tip insertion part 6B Pipe mounting part 6C Automatic open / close valve 6D Internal flow path 7 Large capacity high pressure gas tank (supply tank)
8 Supply piping (piping)
8A, 8B, 8C Supply piping 9 Supply tank side joint 9A Piping mounting portion 9B Tip inserted portion 9C Locking portion
DESCRIPTION OF SYMBOLS 10 On-off valve 11 Control part 12 Gantry stage drive part 13 Correction board | substrates 14 and 15 Connection pipe 21 Table (correction board arrangement | positioning table)
22, 23 Y-axis direction guide part 24 X-axis direction guide part
Claims (7)
前記稼働部は、処理用ガスを貯留して前記修正処理部へ供給する稼働部側タンクと、前記稼働部側タンクへ処理用ガスを導入可能な稼働部側継ぎ手と、を備え、
前記本体部と前記稼働部に干渉しない位置に、供給用タンクに配管で接続された供給用タンク側継ぎ手を固定し、
前記稼働部側継ぎ手は、前記供給用タンク側継ぎ手に対して結合および結合解除が可能である、
基板修正装置。 A main body, an operating section provided movably with respect to the main body, and a correction processing section provided in the operating section, wherein the correction processing section uses a processing gas to correct the correction substrate. A substrate correction device for correcting surface defects,
The operating part includes an operating part side tank that stores the processing gas and supplies the correction gas to the correction processing part, and an operating part side joint that can introduce the processing gas into the operating part side tank,
Fix the supply tank side joint connected by piping to the supply tank at a position that does not interfere with the main body part and the operating part,
The operating part side joint can be coupled and decoupled to the supply tank side joint,
Substrate correction device.
前記稼働部を前記供給用タンク側継ぎ手に向けて移動させることにより、前記供給用タンク側継ぎ手に結合し、
前記稼働部を前記供給用タンク側継ぎ手から遠ざかる方向に移動させることにより、前記供給用タンク側継ぎ手から結合が解除される、
請求項１に記載の基板修正装置。 The operating part side joint is
By moving the operating part toward the supply tank side joint, coupled to the supply tank side joint,
The coupling is released from the supply tank side joint by moving the operating part in a direction away from the supply tank side joint.
The board | substrate correction apparatus of Claim 1.
請求項１または請求項２に記載の基板修正装置。 The operating part performs an operation of coupling the operating part side joint to the supply tank side joint according to the residual gas amount of the operating part side tank.
The board | substrate correction apparatus of Claim 1 or Claim 2.
請求項１乃至請求項３のいずれか一項に記載の基板修正装置。 The main body portion is a gantry stage that includes a correction substrate arrangement table on which the correction substrate is arranged, and that allows the operating unit to move in the XY axis direction of the correction substrate arrangement table.
The board | substrate correction apparatus as described in any one of Claims 1 thru | or 3.
前記稼働部側継ぎ手は、前記供給用タンク側継ぎ手との結合が解除されたときに、内部流路を閉じる自動開閉バルブを内蔵する、
請求項１乃至請求項４のいずれか一項に記載の基板修正装置。 An open / close valve is provided in the pipe,
The operating part side joint incorporates an automatic opening / closing valve that closes an internal flow path when the coupling with the supply tank side joint is released,
The board | substrate correction apparatus as described in any one of Claims 1 thru | or 4.
前記制御部は、
前記稼働部側タンクの残留ガス量の情報に応じて前記本体部および前記稼働部を駆動制御して、前記稼働部側継ぎ手を前記供給用タンク側継ぎ手に結合させ、前記稼働部側継ぎ手と前記供給用タンク側継ぎ手との結合を解除させるときに、前記開閉バルブを閉じる制御を行う、
請求項５に記載の基板修正装置。 With a control unit,
The controller is
Drive control of the main body and the operating unit according to information on the residual gas amount of the operating unit side tank, the operating unit side joint is coupled to the supply tank side joint, the operating unit side joint and the When the coupling with the supply tank side joint is released, the opening and closing valve is controlled to be closed.
The board | substrate correction apparatus of Claim 5.
前記処理用ガスは成膜に用いる原料ガスである、
請求項１乃至請求項６のいずれか一項に記載の基板修正装置。 The correction processing unit performs a film forming process on the surface of the correction substrate,
The processing gas is a source gas used for film formation.
The board | substrate correction apparatus as described in any one of Claims 1 thru | or 6.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017042505A JP2018146826A (en) | 2017-03-07 | 2017-03-07 | Substrate repair apparatus |
| KR1020180024141A KR20180102497A (en) | 2017-03-07 | 2018-02-28 | Apparatus for correction of substrate defects |
| CN201810180229.6A CN108570661A (en) | 2017-03-07 | 2018-03-05 | Substrate repair apparatus |
| CN201820303084.XU CN207918950U (en) | 2017-03-07 | 2018-03-05 | Substrate repair apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017042505A JP2018146826A (en) | 2017-03-07 | 2017-03-07 | Substrate repair apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2018146826A true JP2018146826A (en) | 2018-09-20 |
Family
ID=63576754
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017042505A Pending JP2018146826A (en) | 2017-03-07 | 2017-03-07 | Substrate repair apparatus |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2018146826A (en) |
| KR (1) | KR20180102497A (en) |
| CN (2) | CN108570661A (en) |
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2017
- 2017-03-07 JP JP2017042505A patent/JP2018146826A/en active Pending
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2018
- 2018-02-28 KR KR1020180024141A patent/KR20180102497A/en unknown
- 2018-03-05 CN CN201810180229.6A patent/CN108570661A/en not_active Withdrawn
- 2018-03-05 CN CN201820303084.XU patent/CN207918950U/en not_active Expired - Fee Related
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| JPH1161413A (en) * | 1997-08-08 | 1999-03-05 | Nec Corp | Laser cvd device and method |
| JP2005300940A (en) * | 2004-04-13 | 2005-10-27 | Sharp Corp | Substrate repairing method and repairing device, and substrate repaired by using the same |
| JP2006058269A (en) * | 2004-08-24 | 2006-03-02 | Matsushita Electric Ind Co Ltd | Lighting inspection device for display panel |
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| JP2009092850A (en) * | 2007-10-05 | 2009-04-30 | Micronics Japan Co Ltd | Circuit defect repairing method and device of liquid crystal display |
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Also Published As
| Publication number | Publication date |
|---|---|
| KR20180102497A (en) | 2018-09-17 |
| CN207918950U (en) | 2018-09-28 |
| CN108570661A (en) | 2018-09-25 |
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