CN108566166B - Low-power consumption ultra-wideband low-noise amplifier - Google Patents

Low-power consumption ultra-wideband low-noise amplifier Download PDF

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CN108566166B
CN108566166B CN201810304685.7A CN201810304685A CN108566166B CN 108566166 B CN108566166 B CN 108566166B CN 201810304685 A CN201810304685 A CN 201810304685A CN 108566166 B CN108566166 B CN 108566166B
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amplifier
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CN108566166A (en
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陈林杰
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National Astronomical Observatories of CAS
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/602—Combinations of several amplifiers
    • H03F3/604—Combinations of several amplifiers using FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45172—A transformer being added at the input of the dif amp

Abstract

A low-power consumption ultra-wideband low-noise amplifier, the low-noise amplifier adopts a symmetrical structure, comprising: the differential signal combination circuit comprises an enhancement type pseudomorphic high electron mobility transistor used as a first-stage amplifier, a current feedback amplifier used as a second-stage amplifier and a balun, wherein an input signal is amplified by the enhancement type pseudomorphic high electron mobility transistor and then is coupled to the current feedback amplifier through alternating current, the output ends of the two current feedback amplifiers are respectively connected with the balun, the balun combines the differential signal into a terminal output, and the enhancement type pseudomorphic high electron mobility transistor realizes biasing through an operational amplifier. The invention reduces the influence of the noise of the post amplifier on the noise performance of the whole LNA, greatly reduces the drain current by reducing the grid voltage and increasing the resistance of the drain, ensures the dynamic range of the amplifier, obviously improves the noise of the whole LNA, and has the power consumption less than one fourth of the LNA of LOFAR.

Description

Low-power consumption ultra-wideband low-noise amplifier
Technical Field
The invention belongs to the technical field of space radio telescopes, and particularly relates to a low-power consumption ultra-wideband low-noise amplifier.
Background
The opening of each new spectral window in the past half century has brought a new revolution to astronomy, with a number of unexpected and significant discoveries, including the stars and pulsar found in the low-frequency radio band in the 50 and 60 th century, the cosmic microwave background radiation found in the microwave band in the 60 s, astronomical studies using X-rays and neutrals in the 80 and 90 s, etc., which have also made it possible to fully understand the new physical processes of cosmic radio sources by observing radiation throughout the electromagnetic spectrum. The very low frequency band (< 30MHz), one of the last few unobserved spectral windows, has made potential scientific findings a hotspot in current radio astronomy research. However, in the frequency range below 30MHz, a large amount of artificial strong radio interference severely limits the observation of cosmic radio radiation, and the reflection and absorption of the earth ionosphere make observation of cosmic radio radiation below 10MHz based on ground-based radio telescopes almost impossible. In order to realize radio observation in this frequency band, a space radio telescope is a necessary choice.
For a space low-frequency radio telescope, an antenna system is used as a basic receiving unit, one of the most important characteristics is low power consumption, and the noise suppression performance on a sky background is another important characteristic, and the noise given by the receiving system is generally required to be less than 10% of the noise of the sky background. In addition, in order to realize certain specific scientific observation, such as the dark-space times and the solar and planet low-frequency radio outbreak, the working frequency band of the low-frequency antenna is required to reach about 80MHz or higher, which has certain overlap with the working frequency band of the ground radio telescope, thereby providing a possibility for the joint observation calibration. If the antenna is to operate at a frequency covering the entire spectrum from about 100kHz to 80MHz, it is required that the Low Noise Amplifier (LNA) connected to the antenna must be able to achieve good Noise and linearity characteristics in this ultra-wide band range. While for the LNA, its main function is to amplify the signal coming from the antenna and reduce its own noise as much as possible. In order to meet the requirements of the low-frequency radio telescope on an antenna system, the design of an LNA capable of meeting the requirements is crucial.
At present, no space radio telescope can work in a Frequency band of 100 KHz-80 MHz internationally, and the ground radio telescope working Frequency band is only close to that of the Low Frequency Array (LOFAR) in the Netherlands and the Long-wavelet Array (LWA) in the United states, and the technologies of the space radio telescope and the LOFAR reflect the highest level of the field. The LOFAR antenna works at 10-90MHz, and adopts a basic dipole antenna; the LWA antenna works at 10-88 MHz, and a butterfly-shaped dipole antenna is adopted. The antennas adopted by the Dutch LOFAR are similar to the spatial low-frequency antennas and are the most basic dipole antennas, so that the LNA of the antenna is the closest in design and can reflect the technology of the future spatial low-frequency radio telescope.
For LNAs, most designs are based on 50 ohm systems, and the input and output of such LNAs are 50 ohm matched. The low-frequency radio telescope covers a wide frequency band range, the radiation impedance of the antenna is changed by 50dB, and power matching and noise matching between the antenna and the LNA are very difficult to realize, so that the general 50-ohm matched LNA is difficult to meet the requirements. In order to achieve ultra-wideband signal amplification, the input impedance of the LNA can only be designed to be small enough (current amplifier) or high enough (voltage amplifier). In this way, the first stage amplifier of the LNA is designed as a voltage amplifier by using a field effect transistor, and the specific design is shown in fig. 1.
In the above design, the first stage of the low noise amplifier employs a low noise Enhancement Mode Pseudomorphic HEMT (E-PHEMT) device ATF 54143. The device has very low equivalent noise current because its current gain is very high and the gate current is almost zero. Characteristic frequency f of field effect transistor for realizing high current gain in frequency bandtMust be much higher than the operating frequency; in order to achieve a low equivalent input voltage, its transconductance must be high; the ATF54143 of agilent meets both of these conditions, so the low noise amplifier of LOFAR adopts it as the first stage amplifier. In the selection of the second stage amplifier, the LNA of the LOFAR adopts a broadband PNP type triode BFG31 to form a voltage feedback amplifying circuit with the first stage, thereby ensuring the gain of the low-noise amplifier and realizing the stability of the whole circuit at the same time.
The central site of LOFAR, although built in a radio protected area, transmits relatively far away because very low frequency radio interference can propagate by ionospheric reflections. Therefore, the LNA of the LOFAR takes this point into consideration at the beginning of the design, and the circuit design focuses on the ability to increase the linear range of the amplifier and suppress the second and third order intermodulation signals, which is finally achieved by increasing the power consumption of the amplifier. In addition, because the antenna of the LOFAR has a simple structure and is inexpensive, the sensitivity thereof can be improved by increasing the number of antennas, and thus the performance of the noise thereof is not the most important consideration. For the above reasons, the LNA of the LOFAR cannot meet the requirements of the future space low-frequency radio telescope in terms of power consumption and noise performance, and particularly, the power consumption of the two polarized low-noise amplifiers is as high as more than 1 watt.
Disclosure of Invention
Aiming at the defects of the LNA of the LOFAR, the invention provides the low-power consumption ultra-wideband low-noise amplifier, and the power consumption and the noise performance of the LNA are improved.
The invention discloses a low-power consumption ultra-wideband low-noise amplifier, which adopts a symmetrical structure and comprises: the device comprises an enhancement type pseudomorphic high electron mobility transistor used as a first-stage amplifier, a current feedback amplifier used as a second-stage amplifier and a balun, wherein an input signal is amplified by the enhancement type pseudomorphic high electron mobility transistor and then is coupled to the current feedback amplifier through alternating current, the output ends of the two current feedback amplifiers are respectively connected with the balun, the balun combines differential signals into a terminal output, the enhancement type pseudomorphic high electron mobility transistor realizes biasing through an operational amplifier, and the operational amplifier realizes control over grid voltage through measurement of voltage of a drain electrode.
Preferably, the output end of the operational amplifier is connected with the grid electrode of the first-stage amplifier through a first resistor and a second resistor which are connected in series; the drain electrode of the first-stage amplifier is connected with the positive voltage stabilizer through a third resistor and a fourth resistor which are connected in series; the input end of the operational amplifier is connected between the third resistor and the fourth resistor; the source electrode of the first-stage amplifier is grounded through a fifth resistor and a sixth resistor which are connected in parallel, and is connected to the non-inverting input end of the second-stage amplifier through a seventh resistor.
Preferably, the antenna is connected to the gate of the first stage amplifier via a first capacitor.
Preferably, one end of the second capacitor is connected between the first resistor and the second resistor, and the other end is grounded.
Preferably, the drain of the first-stage amplifier is grounded through a third capacitor.
Preferably, one end of a fourth capacitor is connected between the third resistor and the fourth resistor, and the other end of the fourth capacitor is connected to the non-inverting input terminal of the second-stage amplifier.
Preferably, the inverting input terminal of the second-stage amplifier is grounded through an eighth resistor; and the output end of the second-stage amplifier is connected with the inverting input end through a ninth resistor and is connected with the balun through a tenth resistor.
Preferably, a positive power supply terminal of the second-stage amplifier is grounded through a fifth capacitor, and the positive power supply terminal is grounded through a sixth capacitor.
Preferably, the enhancement mode pseudomorphic hemt is ATF 54143.
Preferably, the current feedback amplifier is selected from one of EL5162, EL5132, E15134 or EL 5164.
Preferably, the operational amplifier is LMV 321.
Preferably, the positive voltage regulator is a voltage regulation chip XC 6215.
Preferably, the conversion and regulation of the positive and negative voltages of the current feedback amplifier is achieved by a switched capacitive voltage converter, preferably LT1054, or the current feedback amplifier is powered by a single power supply.
Compared with the prior art, the invention has the following beneficial effects:
(1) in order to reduce the noise of the system, the invention selects an amplifier EL5162 with lower noise as the second-stage amplifier, and simultaneously sets the gain of the first-stage amplifier to be higher, so that the influence of the noise of the later-stage amplifier on the noise performance of the whole LNA is reduced. Further, by reducing the gate voltage and increasing the resistance of the drain, the drain current is greatly reduced, and the dynamic range of the amplifier is ensured, so that the equivalent noise current of the first-stage amplifier is reduced, and in addition, the noise from the later-stage amplifier is reduced, and the noise of the whole LNA is obviously improved.
(2) Based on the requirement that the noise of the low-frequency radio telescope low-noise amplifier is 10% less than the sky background noise, the LNA of the LOFAR can only achieve the target between 42 and 68MHz, while the LNA of the invention can achieve the target in the frequency band range of 37 to 76MHz by applying the same antenna of the LOFAR, and the whole frequency band is expanded by 13 MHz. For a spatial radio telescope array this means that the LNA used in the present invention requires a shorter antenna to achieve the performance requirements for the entire low frequency band while reducing the weight of the antenna, which is also critical for the space project. On the other hand, if the same antenna is used for both, the LNA of the present invention has a wider frequency band (the frequency band here is mainly determined by the frequency range satisfying the above noise performance). In addition, in order to isolate noise, the power supply is provided by different voltage regulators for the first stage and the second stage of the low noise amplifier, and the positive power supply and the negative power supply are also realized by different voltage regulators.
(3) To improve the linear range of the system, the LNA of the LOFAR trades off between noise characteristics, linear range, and power consumption. Finally, the current of the drain electrode (the first stage) and the current of the collector electrode (the second stage) are increased, the amplifier is set to be in a proper static working point to improve the linear range, and meanwhile, the noise of the amplifier is ensured to be in a lower level. However, the power consumption of the amplifier is greatly increased as a result, and the overall power consumption reaches 690 mW. In the invention, the first-stage amplifier does not need to increase the drain current too much to improve the linear range, considering that the signal itself is very small and the radio interference in the space is relatively small. The second-stage amplifier adopts a current feedback amplifier, and has extremely low power consumption, good noise characteristic and larger linear range. Finally, under the condition that the input power at the compression point of 1dB is reduced by about 3dB only compared with the LNA of the LOFAR, the power consumption of the whole LNA is 157mW, and is only one fourth or less than the power consumption of the LNA of the LOFAR.
Drawings
FIG. 1 is a circuit diagram of a prior art LNA of a LOFAR;
FIG. 2 is a circuit diagram of an LNA according to an embodiment of the present invention;
FIG. 3 is a +5V voltage regulator circuit in an LNA according to an embodiment of the present invention;
FIG. 4 is a-5V voltage regulator circuit in an LNA according to an embodiment of the present invention;
FIG. 5 shows a biasing circuit of the first stage of the LNA according to an embodiment of the invention.
Detailed Description
In order that the objects, technical solutions and advantages of the present invention will become more apparent, the present invention will be further described in detail with reference to the accompanying drawings in conjunction with the following specific embodiments.
In one embodiment of the present invention, the ATF54143 is used as the first stage of the LNA, and the selection of the bias current is required to meet the noise requirement and to ensure stable operation of the LNA. Moreover, its power consumption needs to be sufficiently low. High linearity of the amplifier is often guaranteed by high power consumption, and here a trade-off has to be made to achieve low noise and high linearity while reducing power consumption, so as to satisfy the requirements of the LNA in both aspects as much as possible.
With respect to the second stage of the low noise amplifier, a low power consumption current feedback amplifier EL5162 is used to amplify the signal and achieve matching to the load. It can reduce the standby power consumption of the amplifier to 100 muA through an enable terminal. The bandwidth of the amplifier has a certain relationship with the gain, and the higher the gain is, the narrower the bandwidth is. Since the signal is amplified mainly by the first stage of the LNA, the amplifier gain here is set to around 1, with a corresponding bandwidth around 500 MHz.
Fig. 2 shows the basic circuit of the LNA of the present invention. Its input signal is amplified by a first stage common source E-PHEMT amplifier (ATF54143), wherein the characteristic frequency f of ATF54143tIs 15.8 GHz. The feedback circuit here is used to improve the stability of the LNA. The signal is ac coupled to the second stage. EL5162 is a low power consumption current feedback amplifier. Finally, the differential signals are combined by a balun to a terminal output, which is optimally matched to 50 ohms.
The output end of the operational amplifier is connected with the grid electrode of the first-stage amplifier through a first resistor (R1, R2) and a second resistor (R3, R4) which are connected in series; the drain electrode of the first-stage amplifier is connected with the positive voltage stabilizer through a third resistor (R5, R6) and a fourth resistor (R7, R8) which are connected in series; the input end of the operational amplifier is connected between the third resistor (R5, R6) and the fourth resistor (R7, R8); the source of the first-stage amplifier is grounded through a fifth resistor (R9, R10) and a sixth resistor (R11, R12) which are connected in parallel, and is connected to the non-inverting input end of the second-stage amplifier through a seventh resistor (R13, R14).
The antenna is connected with the grid of the first stage amplifier through a first capacitor (C1, C2); one end of the second capacitor (C3, C4) is connected between the first resistor (R1, R2) and the second resistor (R3, R4), and the other end is grounded; the drain of the first stage amplifier is grounded through a third capacitor (C5, C6); one end of a fourth capacitor (C7, C8) is connected between the third resistor (R5, R6) and the fourth resistor (R7, R8), and the other end is connected with the non-inverting input end of the second-stage amplifier.
The inverting input terminal of the second stage amplifier is grounded through an eighth resistor (R15, R16); the output end of the second-stage amplifier is connected with the inverting input end through a ninth resistor (R17, R18) and is connected with the balun through a tenth resistor (R19, R20).
The positive power supply end of the second-stage amplifier is grounded through a fifth capacitor (C9, C10), and the positive power supply end is grounded through a sixth capacitor (C11, C12).
It should be noted that the serial numbers of the resistors and the capacitors are only used for distinguishing the resistors and the capacitors, and do not represent any sequence, the parameters in the figures are only one preferred embodiment of the present invention, and all the parameters can be adjusted according to different requirements in practical applications.
For the design of the bias circuit, the voltage regulator chip XC6215 is used to supply voltage to the amplifier, as shown in FIG. 3. The high-precision low-noise low-voltage positive voltage stabilizer is a high-precision low-voltage difference positive voltage stabilizer and is manufactured by adopting a CMOS (complementary metal oxide semiconductor) process. Its feed current is only 0.8 muA, and its output voltage accuracy is 2%, and can drive current of 200 mA. The enable CE allows the voltage regulator to be turned off to stop the power supply when needed, which will further reduce the power consumption of the circuit. In order to realize a stable output of 5V, the minimum input voltage requirement is 5.3V.
Since the amplifier of the second stage of the LNA requires a voltage of-5V, a switched capacitor voltage converter is used to convert and stabilize the positive and negative voltages (LT1054), as shown in fig. 4. It can provide a higher output current with a lower voltage loss.
The first stage of the low noise amplifier is biased by an operational amplifier (LMV321) which controls the gate voltage by measuring the drain voltage, as shown in fig. 5. The terminal FB _ A is connected to the terminal FB _ A1 or FB _ A2 in FIG. 2, and the terminal Bias _ A is connected to the terminal Bias _ A1 or Bias _ A2 in FIG. 2. The gain bandwidth of LM321 is 1MHz, which requires 5V to supply power. The input and output are low pass filtered to achieve a flat response. Since the gate is voltage controlled, its output impedance is large. The configuration of the bias circuit is typically used to achieve a lower gain and phase spread of the amplifier, which requires that fluctuations in temperature, voltage and current have a minimal impact on the performance of the active antenna. Here, the PHEMT gate voltage is fixed at 0.42V and is not affected by temperature variation.
In addition, the LNA second-stage amplifier in the present invention is not limited to the EL5162 device, and may be replaced by EL5132, EL5134 or EL5164, but R15, R16, R17 and R18 in the circuit need to be adjusted accordingly to meet the requirement of gain, but the power consumption and noise performance of the LNA are slightly different. The EL5162 and the circuit configuration shown in the above figure are adopted in the present design in consideration of the requirements of power consumption, noise performance, and stability. Meanwhile, the bias circuit of the second-stage amplifier can be changed from positive and negative double power supplies to single power supply.
The noise figure reflects the noise level of the electronic device. For an LNA with a multi-stage amplifier, the noise figure can be given by:
F＝F1+(F2-1)/G1+(F3-1)/G1G2+... (1)
as can be seen from the above formula, each stage of amplifier has a certain gain, so the noise figure of the LNA formed by the multi-stage amplifiers is mainly determined by the noise figure of the first stage amplifier. In order to reduce the noise of the system, an amplifier EL5162 with lower noise is selected as a second-stage amplifier in the design, and the gain of the first-stage amplifier is set to be higher, so that the influence of the noise of the later-stage amplifier on the noise performance of the whole LNA is reduced. Further, by reducing the gate voltage and increasing the resistance of the drain, the drain current is greatly reduced, and the dynamic range of the amplifier is ensured, so that the equivalent noise current of the first-stage amplifier is reduced, and in addition, the noise from the later-stage amplifier is reduced, and the noise of the whole LNA is obviously improved. Based on the requirement that the noise of the low-frequency radio telescope low-noise amplifier is 10% less than the sky background noise, the LNA of the LOFAR can only achieve the target between 42 and 68MHz, while the LNA of the invention can achieve the target in the frequency band range of 37 to 76MHz by applying the same antenna of the LOFAR, and the whole frequency band is expanded by 13 MHz. For a spatial radio telescope array this means that the LNA used in the present invention requires a shorter antenna to achieve the performance requirements for the entire low frequency band while reducing the weight of the antenna, which is also critical for the space project. On the other hand, if the same antenna is used for both, the LNA of the present invention has a wider frequency band (the frequency band here is mainly determined by the frequency range satisfying the above noise performance).
In addition, in order to isolate noise, power is supplied to the first stage and the second stage of the low noise amplifier by different voltage regulators, and the positive power supply and the negative power supply are also realized by different voltage regulators.
To improve the linear range of the system, the LNA of the LOFAR trades off between noise characteristics, linear range, and power consumption. Finally, the current of the drain electrode (the first stage) and the current of the collector electrode (the second stage) are increased, the amplifier is set to be in a proper static working point to improve the linear range, and meanwhile, the noise of the amplifier is ensured to be in a lower level. However, the power consumption of the amplifier is greatly increased as a result, and the overall power consumption reaches 690 mW. In the invention, the first-stage amplifier does not need to increase the drain current too much to improve the linear range in consideration of the small signal and the less radio interference in the space. The second-stage amplifier adopts a current feedback amplifier, and has extremely low power consumption, good noise characteristic and larger linear range. Finally, under the condition that the input power at the compression point of 1dB is reduced by about 3dB only compared with the LNA of the LOFAR, the power consumption of the whole LNA is 157mW, and is only one fourth or less than the power consumption of the LNA of the LOFAR.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (9)

1. A low-power consumption ultra-wideband low-noise amplifier, the low-noise amplifier adopts a symmetrical structure, comprising: the device comprises an enhancement type pseudomorphic high electron mobility transistor, a current feedback amplifier and a balun, wherein an input signal is amplified by the enhancement type pseudomorphic high electron mobility transistor and then is coupled to the current feedback amplifier through alternating current, the output ends of the two current feedback amplifiers are respectively connected with the balun, the balun combines a differential signal into a terminal output, the enhancement type pseudomorphic high electron mobility transistor realizes biasing through an operational amplifier, and the operational amplifier realizes control over the grid voltage of the enhancement type pseudomorphic high electron mobility transistor by measuring the voltage of the drain electrode of the enhancement type pseudomorphic high electron mobility transistor; the output end of the operational amplifier is connected with the grid electrode of the first-stage amplifier through a first resistor (R1, R2) and a second resistor (R3, R4) which are connected in series; the drain electrode of the first-stage amplifier is connected with the positive voltage stabilizer through a third resistor (R5, R6) and a fourth resistor (R7, R8) which are connected in series; the input end of the operational amplifier is connected between the third resistor (R5, R6) and the fourth resistor (R7, R8); the source of the first-stage amplifier is grounded through a fifth resistor (R9, R10) and a sixth resistor (R11, R12) which are connected in parallel, and is connected to the non-inverting input end of the second-stage amplifier through a seventh resistor (R13, R14).
2. The low power ultra-wideband low noise amplifier of claim 1, wherein the antenna is connected to the gate of said first stage amplifier through a first capacitor (C1, C2).
3. The low power ultra-wideband low noise amplifier of claim 1, wherein a second capacitor (C3, C4) has one end connected between the first resistor (R1, R2) and the second resistor (R3, R4), and the other end connected to ground.
4. The low power ultra-wideband low noise amplifier of claim 1, wherein the drain of the first stage amplifier is connected to ground through a third capacitor (C5, C6).
5. The low power ultra-wideband low noise amplifier of claim 1, wherein a fourth capacitor (C7, C8) has one end connected between said third resistor (R5, R6) and fourth resistor (R7, R8), and the other end connected to the non-inverting input of said second stage amplifier.
6. The low power ultra-wideband low noise amplifier of claim 1, wherein the inverting input of the second stage amplifier is connected to ground through an eighth resistor (R15, R16); the output end of the second-stage amplifier is connected with the inverting input end through a ninth resistor (R17, R18) and is connected with the balun through a tenth resistor (R19, R20).
7. The low power ultra-wideband low noise amplifier of claim 1, wherein the positive power supply terminal of the second stage amplifier is connected to ground through a fifth capacitor (C9, C10), and the positive power supply terminal is connected to ground through a sixth capacitor (C11, C12).
8. The low power ultra-wideband low noise amplifier of claim 1, wherein the enhancement mode pseudomorphic hemt is ATF 54143.
9. The low-power consumption ultra-wideband low-noise amplifier according to claim 1, wherein the current feedback amplifier is selected from one of EL5162, EL5132, EL5134, or EL 5164;
the operational amplifier is LMV 321;
the positive voltage stabilizer is a voltage stabilizing chip XC 6215;
the conversion and voltage stabilization of the positive and negative voltages of the current feedback amplifier are realized by a switched capacitive voltage converter, or the current feedback amplifier is powered by a single power supply, and the switched capacitive voltage converter is LT 1054.
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CN105720942A (en) * 2016-01-22 2016-06-29 西安电子科技大学 Ultra-wide-band low-noise high-balance on-chip active Balun
CN205450860U (en) * 2016-03-16 2016-08-10 深圳市比特原子科技有限公司 Constant -current source circuit with adjustable it is small -size
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