CN108550622A - A kind of gallium nitride schottky barrier diode and its manufacturing method - Google Patents
A kind of gallium nitride schottky barrier diode and its manufacturing method Download PDFInfo
- Publication number
- CN108550622A CN108550622A CN201810218852.6A CN201810218852A CN108550622A CN 108550622 A CN108550622 A CN 108550622A CN 201810218852 A CN201810218852 A CN 201810218852A CN 108550622 A CN108550622 A CN 108550622A
- Authority
- CN
- China
- Prior art keywords
- epitaxial layer
- gallium nitride
- schottky
- barrier diode
- schottky barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 49
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 25
- 230000004888 barrier function Effects 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 35
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 29
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 20
- 229910000480 nickel oxide Inorganic materials 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 19
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 9
- 229910052786 argon Inorganic materials 0.000 claims abstract description 6
- 239000012298 atmosphere Substances 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims abstract description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 13
- 239000010936 titanium Substances 0.000 claims description 13
- 229910052719 titanium Inorganic materials 0.000 claims description 13
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 239000004411 aluminium Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 5
- 238000005477 sputtering target Methods 0.000 claims 1
- 239000000463 material Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 3
- 238000011017 operating method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
- H01L21/28581—Deposition of Schottky electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
- H01L29/475—Schottky barrier electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The present invention discloses a kind of gallium nitride schottky barrier diode and its manufacturing method, include the epitaxial layer of substrate and growth on substrate, it is provided with Ohmic electrode and Schottky electrode on the epitaxial layer, invention additionally discloses its manufacturing methods, in nitrogen and argon gas atmosphere, nickel oxide film layer is formed using reactive magnetron sputtering method on the Schottky electrode region on epitaxial layer, then stripping method is used, form Schottky contacts, as Schottky electrode, by replacing nickel metal to be used as Schottky contacts by nickel oxide film layer, it is not good enough that the present invention solves diode stability in the prior art, the larger technical problem of reverse leakage current.
Description
Technical field
The present invention relates to technical field of semiconductors more particularly to a kind of gallium nitride schottky barrier diode and its manufacturers
Method.
Background technology
Schottky-barrier diode (SBD) is the Primary Component of antenna rectifier (RECTIFYING ANTENNA) circuit, is widely used in
In microwave wireless transmission system, including electric powered motor charging, energy acquisition, ubiquitous power supply, and in building
Wireless power distribution.However traditional GaAs and Si base commercialized Schottky barrier diodes cannot meet microwave wireless transmission technology
The requirement of high conversion efficiency is needed under high-frequency and high-voltage.And GaN base material has big band gap, high breakdown fields, the movement of high electronics
Property and the features such as high electron saturation velocities, therefore, GaN base SBD obtains wide in terms of the efficiency for improving microwave wireless transmission system
General concern；In the prior art, diode is usually all that nickel metal is contacted with epitaxial layer, and such stability is not good enough, and lets out
Leakage current is larger, to influence the efficiency of commutation system.
Invention content
The object of the present invention is to provide a kind of gallium nitride schottky barrier diode and its manufacturing methods, solve existing skill
Diode stability in art is not good enough, and reverse leakage current is larger, thus the technical issues of influencing the efficiency of commutation system.
A kind of gallium nitride schottky barrier diode includes the epitaxial layer of substrate and growth on substrate, which is characterized in that
It is provided with Ohmic electrode and Schottky electrode on the epitaxial layer.
Based on the above technical solution, the present invention can also be improved as follows：
Further, the epitaxial layer is n-GaN layers, and the advantageous effect using this step, which is gallium nitride-based material, to be had greatly
The characteristics of band gap, high breakdown fields, high electron mobility and high electron saturation velocities, this gallium nitride material surface and nickel oxide shape
At Schottky barrier constitute the present invention device, the efficiency of microwave wireless transmission system can be improved using this device.
Further, the Schottky electrode includes nickel oxide film layer, and the advantageous effect using this step is to pass through nitridation
Nickel film layer replaces nickel metal as Schottky contacts, can improve stability in this way and reduce leakage current.
The present invention also provides a kind of manufacturing methods of gallium nitride schottky barrier diode, include the following steps：
S1：The epitaxial layer of n-GaN is formed using Metalorganic Chemical Vapor Deposition growth substrates surface；
S2：Titanium/aluminium/titanium/gold multiple layer metal is sequentially formed on epitaxial layer using magnetron sputtering method, then uses stripping side
Method is by the metal-stripping on epitaxial layer outside Ohmic electrode region to be formed, and in nitrogen atmosphere, carries out thermal anneal process, is formed
Ohmic contact；
S3：Nickel oxide film layer is formed using reactive magnetron sputtering method on the Schottky electrode region on epitaxial layer,
Schottky contacts are formed, Schottky electrode is become.
In the manufacturing method, n-GaN layers of the doping concentration is 5.0*1015-6.0*1017cm-3。
Further, the reactive magnetron sputtering method in the step S3 is that nitrogen progress is poured in argon gas atmosphere
's.
Beneficial effects of the present invention：
A kind of Schottky-barrier diode of present invention offer and its manufacturing method replace nickel metal by nickel oxide film layer
Layer is used as Schottky contacts, has higher stability and lower leakage current in this way, can simultaneously be effectively improves rectification
The efficiency of system is more suitable for harsh environment；Diode produced by the invention compares more conventional diode, reverse leakage electricity
Stream reduces two orders of magnitude, can effectively improve the efficiency of commutation system in this way.
Description of the drawings
It, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution in the prior art
Embodiment or attached drawing needed to be used in the description of the prior art are briefly described, it should be apparent that, in being described below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
It puts, other drawings may also be obtained based on these drawings.
Fig. 1 is a kind of structural schematic diagram of gallium nitride schottky barrier diode described in the specific embodiment of the invention；
Fig. 2 shows current-voltage (I-V) characteristic of NiN/n-GaN and Ni/n-GaN Schottky diodes.
1- substrates；2- epitaxial layers；3- Ohmic electrodes；4- Schottky electrodes.
Specific implementation mode
The embodiment of technical solution of the present invention is described in detail below in conjunction with attached drawing.Following embodiment is only used for
Clearly illustrate technical scheme of the present invention, therefore be only used as example, and the protection model of the present invention cannot be limited with this
It encloses.
It should be noted that unless otherwise indicated, technical term or scientific terminology used in this application should be this hair
The ordinary meaning that bright one of ordinary skill in the art are understood.
In the description of the present application, it is to be understood that the orientation or positional relationship of the instructions such as term "upper", "lower" is base
It in orientation or positional relationship shown in the drawings, is merely for convenience of description of the present invention and simplification of the description, rather than indicates or imply
Signified device or element must have a particular orientation, with specific azimuth configuration and operation, therefore should not be understood as to this
The limitation of invention.
Embodiment 1：
As shown in Figure 1, a kind of gallium nitride schottky barrier diode provided by the present invention, including substrate and it is grown in lining
Epitaxial layer on bottom is provided with Ohmic electrode and Schottky electrode on the epitaxial layer, and the Schottky electrode in the present embodiment can
Think circle, or other arbitrary shapes.
For the substrate used in the present invention for sapphire substrates, epitaxial layer is n-GaN layers, and the Ohmic electrode on epitaxial layer is
Multiple layer metal is followed successively by titanium/aluminium/titanium/gold from bottom to top, and the titanium layer is contacted with epitaxial layer, and Ohmic electrode is located at Schottky electricity
The periphery of pole.
Wherein, the Schottky electrode includes nickel oxide film layer, and the present invention replaces nickel metal by nickel oxide film layer
As Schottky contacts, stability can be improved in this way and reduces leakage current.
Wherein, the epitaxial layer is n-GaN layers, because gallium nitride-based material has big band gap, high breakdown fields, high electronics
The Schottky barrier that the characteristics of mobility and high electron saturation velocities, this gallium nitride material surface and nickel oxide are formed constitutes
The device of the present invention, the efficiency of microwave wireless transmission system can be improved using this device.
The present invention also provides the manufacturing methods of above-mentioned gallium nitride schottky barrier diode, include the following steps：
S1：The epitaxial layer of n-GaN is formed using Metalorganic Chemical Vapor Deposition growth substrates surface；
S2：Titanium/aluminium/titanium/gold multiple layer metal is sequentially formed on epitaxial layer using magnetron sputtering method, then uses stripping side
Method is by the metal-stripping on epitaxial layer outside Ohmic electrode region to be formed, and in nitrogen atmosphere, carries out thermal anneal process, is formed
Ohmic contact；
S3：Nickel oxide film layer is formed using reactive magnetron sputtering method on the Schottky electrode region on epitaxial layer,
Schottky contacts are formed, Schottky electrode is become.
Wherein, in step S1, n-GaN layers of doping concentration is 5.0*1015。
Wherein, the reactive magnetron sputtering method in the step S3 is to pour nitrogen in argon gas atmosphere to carry out, this
The NiN film layers formed in inventive step S3 can be NiN, Ni2N and Ni3The mixing of N.
Fig. 2 shows current-voltage (I-V) characteristic of NiN/n-GaN and Ni/n-GaN Schottky diodes.With Ni Schottky
Diode is compared, and the anti-leakage current of NiN Schottky diodes is reduced by about two orders of magnitude.
The operating methods such as Metalorganic Chemical Vapor Deposition, magnetron sputtering method, stripping method in the present invention are existing
Technology, details are not described herein again.
Embodiment 2
A kind of gallium nitride schottky barrier diode provided by the present invention includes the extension of substrate and growth on substrate
Layer, it is provided with Ohmic electrode and Schottky electrode on the epitaxial layer, the Schottky electrode in the present embodiment can be circle,
Can be other arbitrary shapes.
Wherein, the Schottky electrode includes nickel oxide film layer, and the present invention replaces nickel metal by nickel oxide film layer
As Schottky contacts, stability can be improved in this way and reduces leakage current.
Wherein, the epitaxial layer is n-GaN layers.
The present invention also provides a kind of manufacturing methods of gallium nitride schottky barrier diode, include the following steps：
S1：The epitaxial layer of n-GaN is formed using Metalorganic Chemical Vapor Deposition growth substrates surface；
S2：Titanium/aluminium/titanium/gold multiple layer metal is sequentially formed on epitaxial layer using magnetron sputtering method, then uses stripping side
Method is by the metal-stripping on epitaxial layer outside Ohmic electrode region to be formed, and in nitrogen atmosphere, carries out thermal anneal process, is formed
Ohmic contact；
S3：Nickel oxide film layer is formed using reactive magnetron sputtering method on the Schottky electrode region on epitaxial layer,
Schottky contacts are formed, Schottky electrode is become.
Wherein, in step S1, n-GaN layers of doping concentration is 6.0*1017cm-3。
Wherein, the reactive magnetron sputtering method in the step S3 is to pour nitrogen in argon gas atmosphere to carry out, this
The NiN film layers formed in inventive step S3 can be NiN, Ni2N and Ni3The mixing of N.
The operating methods such as Metalorganic Chemical Vapor Deposition, magnetron sputtering method, stripping method in the present invention are existing
Technology, details are not described herein again.
Embodiment 3：
A kind of gallium nitride schottky barrier diode provided by the present invention includes the extension of substrate and growth on substrate
Layer, it is provided with Ohmic electrode and Schottky electrode on the epitaxial layer, the Schottky electrode in the present embodiment can be circle,
Can be other arbitrary shapes.
Wherein, the Schottky electrode includes nickel oxide film layer, and the present invention replaces nickel metal by nickel oxide film layer
As Schottky contacts, stability can be improved in this way and reduces leakage current.
Wherein, the epitaxial layer is n-GaN layers.
The present invention also provides a kind of manufacturing methods of gallium nitride schottky barrier diode, include the following steps：
S1：The epitaxial layer of n-GaN is formed using Metalorganic Chemical Vapor Deposition growth substrates surface；
S2：Titanium/aluminium/titanium/gold multiple layer metal is sequentially formed on epitaxial layer using magnetron sputtering method, then uses stripping side
Method is by the metal-stripping on epitaxial layer outside Ohmic electrode region to be formed, and in nitrogen atmosphere, carries out thermal anneal process, is formed
Ohmic contact；
S3：Nickel oxide film layer is formed using reactive magnetron sputtering method on the Schottky electrode region on epitaxial layer,
Schottky contacts are formed, Schottky electrode is become.
Wherein, in step S1, n-GaN layers of doping concentration is 6.0*1016cm-3。
Wherein, the reactive magnetron sputtering method in the step S3 is to pour nitrogen in argon gas atmosphere to carry out, this
The NiN film layers formed in inventive step S3 can be NiN, Ni2N and Ni3The mixing of N.
Fig. 2 shows current-voltage (I-V) characteristic of NiN/n-GaN and Ni/n-GaN Schottky diodes.With Ni Schottky
Diode is compared, and the anti-leakage current of NiN Schottky diodes is reduced by about two orders of magnitude.
The operating methods such as Metalorganic Chemical Vapor Deposition, magnetron sputtering method, stripping method in the present invention are existing
Technology, details are not described herein again.
In the specification of the present invention, numerous specific details are set forth.It is to be appreciated, however, that the embodiment of the present invention can be with
It puts into practice without these specific details.In some instances, well known method, structure and skill is not been shown in detail
Art, so as not to obscure the understanding of this description.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means specific features, structure, material or spy described in conjunction with this embodiment or example
Point is included at least one embodiment or example of the invention.In the present specification, schematic expression of the above terms are not
It must be directed to identical embodiment or example.Moreover, particular features, structures, materials, or characteristics described can be in office
It can be combined in any suitable manner in one or more embodiments or example.In addition, without conflicting with each other, the skill of this field
Art personnel can tie the feature of different embodiments or examples described in this specification and different embodiments or examples
It closes and combines.
Finally it should be noted that：The above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Present invention has been described in detail with reference to the aforementioned embodiments for pipe, it will be understood by those of ordinary skill in the art that：Its according to
So can with technical scheme described in the above embodiments is modified, either to which part or all technical features into
Row equivalent replacement；And these modifications or replacements, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The range of scheme should all cover in the claim of the present invention and the range of specification.
Claims (7)
1. a kind of gallium nitride schottky barrier diode includes the epitaxial layer of substrate and growth on substrate, which is characterized in that institute
It states and is provided with Ohmic electrode and Schottky electrode on epitaxial layer.
2. a kind of gallium nitride schottky barrier diode according to claim 1, which is characterized in that the epitaxial layer is n-
GaN layer.
3. a kind of gallium nitride schottky barrier diode according to claim 1, which is characterized in that the Schottky electrode
Including nickel oxide film layer, the nickel oxide film layer is contacted with the epitaxial layer.
4. a kind of manufacturing method of any gallium nitride schottky barrier diodes of claim 1-3, which is characterized in that packet
Include following steps：
S1：The epitaxial layer of n-GaN is formed in substrate surface using Metalorganic Chemical Vapor Deposition；
S2：Titanium/aluminium/titanium/gold multiple layer metal is sequentially formed on epitaxial layer using magnetron sputtering method, then uses stripping means will
Metal-stripping on epitaxial layer outside Ohmic electrode region to be formed carries out thermal anneal process in nitrogen atmosphere, forms ohm
Contact；
S3：Nickel oxide film layer is formed using reactive magnetron sputtering method on the Schottky electrode region on epitaxial layer, is formed
Schottky contacts become Schottky electrode.
5. a kind of manufacturing method of gallium nitride schottky barrier diode according to claim 4, which is characterized in that step
N-GaN layers of doping concentration is 5.0*10 in S115-6.0*1017cm-3。
6. a kind of manufacturing method of gallium nitride schottky barrier diode according to claim 4, which is characterized in that described
The sputtering target that reactive magnetron sputtering method in step S3 uses is nickel target.
7. a kind of manufacturing method of gallium nitride schottky barrier diode according to claim 5, which is characterized in that described
Reactive magnetron sputtering method in step S3 is to pour nitrogen in argon gas atmosphere to carry out.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810218852.6A CN108550622A (en) | 2018-03-16 | 2018-03-16 | A kind of gallium nitride schottky barrier diode and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810218852.6A CN108550622A (en) | 2018-03-16 | 2018-03-16 | A kind of gallium nitride schottky barrier diode and its manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108550622A true CN108550622A (en) | 2018-09-18 |
Family
ID=63516517
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810218852.6A Pending CN108550622A (en) | 2018-03-16 | 2018-03-16 | A kind of gallium nitride schottky barrier diode and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108550622A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110931570A (en) * | 2019-12-13 | 2020-03-27 | 西安电子科技大学 | Gallium nitride Schottky barrier diode and manufacturing method thereof |
| CN111293173A (en) * | 2018-12-10 | 2020-06-16 | 黄山学院 | Silicon-based gallium nitride enhanced HEMT device and preparation method thereof |
| CN111293179A (en) * | 2018-12-10 | 2020-06-16 | 黄山学院 | Silicon-based gallium nitride Schottky diode and preparation method thereof |
| CN111987814A (en) * | 2019-05-23 | 2020-11-24 | 国立大学法人德岛大学 | Medical microwave power supply system, power receiving circuit, and schottky barrier diode |
| CN114335169A (en) * | 2021-11-25 | 2022-04-12 | 江西誉鸿锦材料科技有限公司 | Gallium nitride Schottky barrier diode and manufacturing method thereof |
| CN115360235A (en) * | 2022-08-09 | 2022-11-18 | 江南大学 | Gallium nitride Schottky barrier diode and manufacturing method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1675775A (en) * | 2002-06-17 | 2005-09-28 | 日本电气株式会社 | Semiconductor device having Schottky junction electrode |
| CN100373634C (en) * | 2001-07-23 | 2008-03-05 | 美商克立股份有限公司 | Gallium nitride based diodes with low forward voltage and low reverse current operation |
| CN101351898A (en) * | 2005-12-27 | 2009-01-21 | 三星电子株式会社 | Group-III nitride-based light emitting device |
| CN102097492A (en) * | 2010-12-24 | 2011-06-15 | 中山大学 | Hetetrostructure field effect diode and manufacturing method thereof |
| CN107221565A (en) * | 2017-05-23 | 2017-09-29 | 江南大学 | The preparation method of high-gain gallium nitride Schottky diode is realized based on ion implanting fluorine |
-
2018
- 2018-03-16 CN CN201810218852.6A patent/CN108550622A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100373634C (en) * | 2001-07-23 | 2008-03-05 | 美商克立股份有限公司 | Gallium nitride based diodes with low forward voltage and low reverse current operation |
| CN1675775A (en) * | 2002-06-17 | 2005-09-28 | 日本电气株式会社 | Semiconductor device having Schottky junction electrode |
| CN101351898A (en) * | 2005-12-27 | 2009-01-21 | 三星电子株式会社 | Group-III nitride-based light emitting device |
| CN102097492A (en) * | 2010-12-24 | 2011-06-15 | 中山大学 | Hetetrostructure field effect diode and manufacturing method thereof |
| CN107221565A (en) * | 2017-05-23 | 2017-09-29 | 江南大学 | The preparation method of high-gain gallium nitride Schottky diode is realized based on ion implanting fluorine |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111293173A (en) * | 2018-12-10 | 2020-06-16 | 黄山学院 | Silicon-based gallium nitride enhanced HEMT device and preparation method thereof |
| CN111293179A (en) * | 2018-12-10 | 2020-06-16 | 黄山学院 | Silicon-based gallium nitride Schottky diode and preparation method thereof |
| CN111987814A (en) * | 2019-05-23 | 2020-11-24 | 国立大学法人德岛大学 | Medical microwave power supply system, power receiving circuit, and schottky barrier diode |
| CN111987814B (en) * | 2019-05-23 | 2021-07-06 | 国立大学法人德岛大学 | Medical microwave power supply system, power receiving circuit, and schottky barrier diode |
| CN110931570A (en) * | 2019-12-13 | 2020-03-27 | 西安电子科技大学 | Gallium nitride Schottky barrier diode and manufacturing method thereof |
| CN110931570B (en) * | 2019-12-13 | 2021-05-18 | 西安电子科技大学 | Gallium nitride Schottky barrier diode and manufacturing method thereof |
| CN114335169A (en) * | 2021-11-25 | 2022-04-12 | 江西誉鸿锦材料科技有限公司 | Gallium nitride Schottky barrier diode and manufacturing method thereof |
| CN115360235A (en) * | 2022-08-09 | 2022-11-18 | 江南大学 | Gallium nitride Schottky barrier diode and manufacturing method thereof |
| CN115360235B (en) * | 2022-08-09 | 2024-04-09 | 江南大学 | Gallium nitride Schottky barrier diode and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108550622A (en) | A kind of gallium nitride schottky barrier diode and its manufacturing method | |
| CN110265486B (en) | Gallium oxide SBD terminal structure and preparation method | |
| CN110931570B (en) | Gallium nitride Schottky barrier diode and manufacturing method thereof | |
| CN106024914A (en) | GaN-based schottky diode having hybrid anode electrode structure and preparation method thereof | |
| CN110112207B (en) | Gallium oxide-based mixed PiN Schottky diode and preparation method thereof | |
| CN103904135B (en) | Schottky diode and its manufacture method | |
| CN103579375B (en) | A kind of SiC Schottky diode and preparation method thereof | |
| CN110518074B (en) | Cathode-anode alternating high-current GaN Schottky diode and manufacturing method thereof | |
| CN109545842A (en) | Silicon carbide device terminal structure and preparation method thereof | |
| CN107978642A (en) | A kind of GaN base heterojunction diode and preparation method thereof | |
| CN110504330B (en) | Schottky diode and preparation method thereof | |
| CN113594234B (en) | Preparation method of gallium oxide Schottky diode with low turn-on voltage | |
| CN115377224A (en) | Gallium oxide Schottky diode with high-breakdown bipolar field limiting ring structure and preparation method thereof | |
| CN105428235A (en) | Method for reducing GaN device current leakage | |
| CN103904112B (en) | Depletion type insulated gate AlGaN/GaN device architecture and preparation method thereof | |
| CN115312605A (en) | Gallium oxide Schottky diode for improving terminal edge peak value electric field and preparation method thereof | |
| CN110197854A (en) | Gallium oxide SBD terminal structure and preparation method | |
| CN116093143A (en) | Gallium nitride Schottky diode integrating MISFET gate control function and field plate function and manufacturing method thereof | |
| CN110808292B (en) | GaN-based complete vertical Schottky varactor based on metal eave structure and preparation method thereof | |
| CN108598147A (en) | Graded component drift layer vertical-type power diode and preparation method thereof | |
| CN112825330B (en) | GaN transistor device with high-linearity composite gate structure and preparation method thereof | |
| CN114927576A (en) | Low-leakage high-temperature-resistant gallium oxide heterojunction diode and preparation method thereof | |
| CN113659013A (en) | Schottky diode with p-type oxide dielectric composite mixed anode and manufacturing method thereof | |
| CN216528896U (en) | Gallium oxide-based semiconductor device | |
| CN205911315U (en) | GaN base schottky diode who mixes positive pole electrode structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20210310 Address after: 518000 Room 301, building 9, Nangang No.2 Industrial Park, 1026 Songbai Road, sunshine community, Xili street, Nanshan District, Shenzhen City, Guangdong Province Applicant after: Shenzhen yuhongjin Technology Co.,Ltd. Address before: Room 504, 8 / F, block B, Zhigu, 186 Yangzijiang Middle Road, Yangzhou Economic Development Zone, Jiangsu Province 225000 Applicant before: YANGZHOU KEXUNWEI SEMICONDUCTOR Co.,Ltd. |
|
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20220810 Address after: Building 7, Semiconductor Technology Park, Gaoxin 5th Road, Fuzhou High-tech Industrial Development Zone, Fuzhou City, Jiangxi Province, 344000 Applicant after: Jiangxi Yuhongjin Chip Technology Co., Ltd. Address before: 518000 Room 301, building 9, Nangang No.2 Industrial Park, 1026 Songbai Road, sunshine community, Xili street, Nanshan District, Shenzhen City, Guangdong Province Applicant before: Shenzhen yuhongjin Technology Co.,Ltd. |
|
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180918 |