CN108540105A - Rf-resonator structure - Google Patents
Rf-resonator structure Download PDFInfo
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- CN108540105A CN108540105A CN201810319927.XA CN201810319927A CN108540105A CN 108540105 A CN108540105 A CN 108540105A CN 201810319927 A CN201810319927 A CN 201810319927A CN 108540105 A CN108540105 A CN 108540105A
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- interdigital electrode
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- 235000019687 Lamb Nutrition 0.000 claims description 42
- 238000010276 construction Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 4
- 230000008878 coupling Effects 0.000 abstract description 17
- 238000010168 coupling process Methods 0.000 abstract description 17
- 238000005859 coupling reaction Methods 0.000 abstract description 17
- 238000010586 diagram Methods 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000004088 simulation Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 229910017083 AlN Inorganic materials 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010361 irregular oscillation Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H9/02433—Means for compensation or elimination of undesired effects
- H03H9/02448—Means for compensation or elimination of undesired effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Rf-resonator structure disclosed by the invention, including a certain number of top interdigital electrodes for being respectively configured of piezoelectric layer and piezoelectric layer upper and lower surface and bottom interdigital electrode；Position of the piezoelectric layer upper surface between adjacent top interdigital electrode is equipped with the groove along top interdigital electrode length direction；Meanwhile position of the piezoelectric layer lower surface between adjacent base interdigital electrode is equipped with the groove along bottom interdigital electrode length direction.The present invention, along the groove of interdigital electrode length direction, to substantially eliminate the spurious mode of resonator, and promotes the electromechanical coupling factor of resonator by the piezoelectric layer setting between adjacent inter-digital electrodes；And easily implement, implementation cost is low.
Description
Technical field
The present invention relates to resonator technologies field, more particularly to one kind can effectively reduce spurious mode and can elevator thermocouple
The rf-resonator structure of collaboration number.
Background technology
MEMS sensor device plays extremely important effect in field of wireless communication.Wherein, SAW resonator
(Surface Acoustic Wave Resonator) and bulk acoustic wave resonator (Bulk Acoustic Wave Resonator)
By its distinctive advantage, leading position is occupied in mainstream market.SAW resonator is simple for process, makes maturation, but
Be since there are reflecting gratings in its own structure, it is in comparison bulky, cannot be unfavorable for being miniaturized with IC process compatibles
Development.Bulk acoustic wave resonator occupies leading position in high frequency field by its excellent performance, however its resonant frequency is by piezoelectricity
The thickness of layer determines, and single process processing can be only done a kind of deposition of thickness thin film, this is also meaned that, in single-wafer
On, it cannot achieve the bulk acoustic wave device of multi-frequency.
With the fast development of wireless communication, the width of wireless signal is more crowded, this filter to front end band pass filters
Higher requirements are also raised for wave energy.Radio frequency front-end devices must satisfy integrated, micromation, low-power consumption, high-performance, it is low at
The requirement of this grade.Therefore, it is badly in need of wanting a kind of more efficient resonator to realize these functions.Lamb wave resonator comes into being.
Lamb wave resonator is the research hotspot for the novel MEMS sensor risen in recent years, has both FBAR and SAW is humorous
Shake device the advantages of, there are higher quality factor, the moderate coefficient of coup, low dispersion, the high velocity of sound, low-power consumption, the spies such as small
Sign, can realize the design of much frequency resonance device on same wafer.Since the Lamb wave syntonizer has advantage as above, so can
To be widely used in multiband filter, duplexer, antenna duplexer, multipath conversion filter etc..
The structure of traditional aluminium nitride Lamb wave resonator is as shown in Fig. 1~2, in about 2 piezoelectric layer that aluminium nitride is constituted
A certain number of top interdigital electrodes 1 and bottom interdigital electrode 3 is respectively configured.When in the interdigital electricity of top interdigital electrode 1 and bottom
When applying driving voltage on pole 3, the Lamb wave for being parallel to inter-digital electrode width direction can be generated in piezoelectric layer 2, in Lamb wave
Standing wave can be reflected to form when the free boundary for arriving at both sides, the strongest electrical response pattern thus caused is known as main mould.However,
When sound wave is with non-perpendicular angular spread, the transverse mode for being parallel to interdigital electrode length direction is will produce, this kind of sound wave
When arriving at boundary and reflecting, burr, i.e. spurious mode can be generated on the position close to main mould, it is humorous to reduce
It shakes the quality and efficiency of device.
Lamb wave resonator is influenced, spurious mode is always existed since its structure feature is limited by its direction of wave travel
And it is difficult to effectively eliminate.Spurious mode shows that the resonance peak of holotype can nearby exist and is caused by the sound wave laterally propagated
Spurious resonance peak, as shown in Figure 3.This has the performance of resonator crucial influence, can greatly reduce electronic product
For the efficiency of signal transmission.On the other hand, the presence of spurious mode can make the electromechanical coupling factor of Lamb wave resonator not
It can significantly improve, generally, electromechanical coupling factor maintains 2% or so.
So far, many researchers are dedicated to improving the quality factor (Quality of Lamb wave filter
Factor), good method is but never had for how to reduce and eliminate the spurious mode of Lamb wave.Currently, only Tianjin is big
Notification number is the Chinese patent of 105337586 A of CN, it is proposed that by the side wall of piezoelectric layer or the surface of interdigital electrode
The method of multiple bulge-structures is set, to eliminate the spurious mode in Lamb wave resonator, to avoid being generated in filter
Ripple and burr improve the quality of filter afterwards.However this structure is excessively complicated, for resonator that micron order requires
Speech, enforcement difficulty is high, and implementation cost is also very high.
Invention content
The object of the present invention is to provide a kind of radio frequency for effectively reducing spurious mode and electromechanical coupling factor can be improved is humorous
It shakes device structure.
In order to achieve the above objectives, rf-resonator structure provided by the invention, including：
(1) rf-resonator structure provided by the invention is Lamb wave filter construction, including piezoelectric layer and pressure
The a certain number of top interdigital electrodes and bottom interdigital electrode that electric layer upper and lower surface is respectively configured；Piezoelectric layer upper surface is located at phase
Position between adjacent top interdigital electrode is equipped with the groove along top interdigital electrode length direction；Meanwhile piezoelectric layer lower surface
Position between adjacent base interdigital electrode is equipped with the groove along bottom interdigital electrode length direction.
Preferably, piezoelectric layer upper surface is located at the position between interdigital electrode and piezoelectric layer corresponding edge at the top of outermost
It also is provided with the groove along top interdigital electrode length direction；Meanwhile piezoelectric layer lower surface be located at outermost side bottom interdigital electrode and
Position between piezoelectric layer corresponding edge also is provided with the groove along bottom interdigital electrode length direction.
(2) rf-resonator structure provided by the invention is Lamb wave filter construction, including piezoelectric layer and pressure
The a certain number of top interdigital electrodes and bottom interdigital electrode that electric layer upper and lower surface is respectively configured；Piezoelectric layer upper surface is located at most
Position between outside top interdigital electrode and piezoelectric layer corresponding edge is equipped with the groove along top interdigital electrode length direction；Together
When, position of the piezoelectric layer lower surface between outermost side bottom interdigital electrode and piezoelectric layer corresponding edge also is provided with pitching along bottom
Refer to the groove in electrode length direction.
(3) rf-resonator structure provided by the invention is bulk acoustic resonator structure, including piezoelectric layer, piezoelectric layer
A certain number of top interdigital electrodes of upper surface configuration and the bottom electrode plate of piezoelectric layer lower surface configuration；On piezoelectric layer
Position of the surface between adjacent top interdigital electrode is equipped with the groove along top interdigital electrode length direction.
Preferably, piezoelectric layer upper surface is located at the position between interdigital electrode and piezoelectric layer corresponding edge at the top of outermost
It also is provided with the groove along top interdigital electrode length direction.
(4) rf-resonator structure provided by the invention is bulk acoustic resonator structure, including piezoelectric layer, piezoelectric layer
A certain number of top interdigital electrodes of upper surface configuration and the bottom electrode plate of piezoelectric layer lower surface configuration；On piezoelectric layer
Surface is located at the position at the top of outermost between interdigital electrode and piezoelectric layer corresponding edge and is equipped with along top interdigital electrode length side
To groove.
In above-mentioned four classes rf-resonator structure, the cross sectional shape of the groove is arc, trapezoidal, rectangle or triangle.
A kind of preferred embodiment of above-mentioned four classes rf-resonator structure is：Negative temperature coefficient material is filled in groove, with
Improve the temperature compensation capability of resonator.
To Lamb wave resonator, by alternately applying generating positive and negative voltage in top interdigital electrode and bottom interdigital electrode, to
Lamb wave is generated inside piezoelectric layer.At this point, all interdigital electrodes all should be at the vibrational state of vertical rule, generation
Lamb wave just will not be disorderly, is in particular in impulse- free robustness phenomenon in logarithm impedance curve.However, under working condition, traditional structure
Lamb wave resonator in, only intermediate interdigital electrode can be in the perpendicular of rule because bearing the uniform stress in both sides
Straight vibrational state；The Stress non-homogeneity that outermost two interdigital electrodes are born due to the left and right sides, during vertical vibrating
Generation horizontal vibration that can also be additional, this has resulted in the transverse mode of Lamb wave propagation, has been in particular in logarithm impedance curve
In there are rough burr phenomenas.
For this phenomenon, the present invention is arranged by the piezoelectric layer between adjacent inter-digital electrodes along interdigital electrode length side
To groove, to balance non-uniform stress at left and right sides of interdigital electrode, while reducing resonator spurious mode, and also
The electromechanical coupling factor of resonator can be improved.From fig. 6, it can be seen that the present invention can be by the electromechanical coupling factor of Lamb wave resonator
It is promoted from 7.05% to 7.81%, electromechanical coupling factor improves 10.8%.
Therefore, the invention has the advantages that and advantageous effect：
By the way that the groove along interdigital electrode length direction is arranged between adjacent interdigital electrode, to substantially eliminate resonator
Spurious mode, and promote the electromechanical coupling factor of resonator；And easily implement, implementation cost is low.
Description of the drawings
Fig. 1 is the structural schematic diagram of conventional nitridation aluminium Lamb wave resonator；
Fig. 2 is the schematic cross-section of conventional nitridation aluminium Lamb wave resonator；
Fig. 3 is the logarithm impedance plot of the conventional nitridation aluminium Lamb wave resonator obtained using finite element simulation；
Fig. 4 is the schematic cross-section of the first specific Lamb wave filter construction of the invention；
Fig. 5 is the logarithm impedance plot of Lamb wave resonator shown in Fig. 4 for being obtained using finite element simulation；
Fig. 6 is the logarithm impedance curve comparison diagram of the Lamb wave resonator of Fig. 1 and Fig. 4；
Fig. 7 is the schematic cross-section of second of specific Lamb wave filter construction of the invention；
Fig. 8 is the schematic cross-section of traditional bulk acoustic resonator structure；
Fig. 9 is the schematic cross-section of the first specific bulk acoustic resonator structure of the invention；
Figure 10 is the schematic cross-section of second of specific bulk acoustic resonator structure of the invention；
Figure 11 is the logarithm impedance curve comparison diagram of the bulk acoustic resonator structure of Fig. 8 and Figure 10.
In figure, interdigital electrode at the top of 1-；2- piezoelectric layers, the bottoms 3- interdigital electrode, 4- arcuate furrows, 5- trapezoidal grooves, 6-
Bottom electrode plate.
Specific implementation mode
In order to illustrate more clearly of the present invention and/or technical solution in the prior art, below originally by control description of the drawings
Inventive embodiments.It should be evident that the accompanying drawings in the following description is only the section Example of the present invention, it is common for this field
For technical staff, without creative efforts, other drawings may also be obtained based on these drawings, and obtains
Obtain other embodiments.
Fig. 1~2 show the structural schematic diagram of conventional nitridation aluminium Lamb wave resonator.As shown, what aluminium nitride was constituted
A certain number of top interdigital electrodes 1 and bottom interdigital electrode 3 is respectively configured in about 2 piezoelectric layer.Interdigital electrode 1 and bottom at top
After applying driving voltage in portion's interdigital electrode 3, the Lamb wave for being parallel to electrode width direction, Lamb can be generated in piezoelectric layer 2
Wave can reflect to form standing wave when wave arrives at the free boundary of both sides, and the strongest electrical response pattern thus caused is known as leading
Mould.However, when sound wave is with non-perpendicular angular spread, the transverse mode for being parallel to interdigital electrode length direction is will produce, this
A kind of sound wave can generate burr, i.e. spurious mode when arriving at boundary and reflecting on the position close to main mould, from
And reduce the quality and efficiency of resonator.
Fig. 3 is the logarithm impedance plot of the conventional nitridation aluminium Lamb wave resonator obtained using finite element simulation.Such as figure
It is shown, burr phenomena is had at 2.6GHz, shows as the left and right irregular oscillation of electrode.This is because the transverse mode of wave causes
Artifacts.The presence of artifacts not only reduces the quality and efficiency of Lamb wave resonator, also limits its electromechanical coupling
Collaboration number further increases.The tradition Lamb wave resonator, series resonance frequency fs are 2.721GHz, parallel resonance frequency
Fp is 2.801GHz, electromechanical coupling factorIt is 7.05%.
Fig. 4 is the schematic cross-section of the first specific Lamb wave filter construction of the invention.As shown, piezoelectric layer 2
Position of the upper surface between adjacent top interdigital electrode 1 is equipped with the arcuate furrow 4 along top interdigital electrode length direction；
Meanwhile position of 2 lower surface of piezoelectric layer between adjacent base interdigital electrode 3 is equipped with along bottom interdigital electrode length direction
Arcuate furrow 4.The cross sectional shape of 4 dactylotome slot of the arcuate furrow is arc.By the way that arc is arranged between adjacent inter-digital electrodes
Shape groove 4, to be obviously improved influence of the transverse mode to resonator, specific visible Fig. 5.
Fig. 5 is the logarithm impedance plot of Lamb wave resonator shown in Fig. 4 for being obtained using finite element simulation.As schemed
Show, logarithm impedance curve is very smooth, and burr phenomena disappears at 2.6GHz, completely eliminates the influence of spurious mode.The Lamb
Wave resonator, series resonance frequency fs are 2.721GHz, and parallel resonance frequency fp is 2.810GHz, electromechanical coupling factor
It is 7.81%.
Fig. 6 is the logarithm impedance curve comparison diagram of the Lamb wave resonator of Fig. 1 and Fig. 4, and in figure, traditional resonator refers to Fig. 1
Shown Lamb wave resonator improves resonator and refers to Lamb wave resonator shown in Fig. 4.From the graph, it is apparent that of the invention
Lamb wave resonator not only eliminates the burr phenomena of spurious mode, has also been obviously improved electromechanical coupling factor, electromechanical coupling
Number is promoted to 7.81% from 7.05%.
Fig. 7 is the schematic cross-section of second of specific Lamb wave filter construction of the invention.As shown, piezoelectric layer 2
Position of the upper surface between adjacent top interdigital electrode 1 is equipped with the trapezoidal groove 5 along top interdigital electrode length direction；
Meanwhile position of 2 lower surface of piezoelectric layer between adjacent base interdigital electrode 3 is equipped with along bottom interdigital electrode length direction
Trapezoidal groove 5.The cross sectional shape of 5 dactylotome slot of the trapezoidal groove is trapezoidal.
It is not limited to arc mentioned by embodiment, trapezoidal about trench cross section shape, the groove of Arbitrary Shape Cross Section is all
Non-uniform stress at left and right sides of interdigital electrode can be balanced.That is, for the purpose of the present invention, the groove of Arbitrary Shape Cross Section
All it is feasible.
Fig. 8 is the schematic cross-section of traditional bulk acoustic resonator structure.As shown, the difference of itself and Lamb wave resonator
It is only that and has changed bottom interdigital electrode 3 into bottom electrode plate 6, the manufacture difficulty of resonator can be reduced in this way.Fig. 9 and Figure 10 points
It is not the schematic cross-section of two kinds of specific bulk acoustic resonator structures of the invention, is only located at adjacent top in 2 upper surface of piezoelectric layer
Position between portion's interdigital electrode 1 is equipped with the groove along top interdigital electrode length direction, and set groove is respectively arc
Groove 4 and trapezoidal groove 5.
Figure 11 is the logarithm impedance curve comparison diagram of the bulk acoustic resonator structure of Fig. 8 and Figure 10, logarithm impedance curve profit
It is obtained with finite element simulation, wherein block curve indicates that the logarithm impedance curve of the bulk acoustic resonator structure of Fig. 8, dotted line are bent
Line indicates the logarithm impedance curve of the bulk acoustic resonator structure of Figure 10.As shown, traditional bulk acoustic resonator structure, string
It is 2.605GHz to join resonant frequency fs, and parallel resonance frequency fp is 2.654GHz, electromechanical coupling factorIt is 4.56%；This hair
Bright bulk acoustic resonator structure, series resonance frequency fs are 2.588GHz, and parallel resonance frequency fp is 2.650GHz, electromechanical coupling
Collaboration numberIt is 5.78%, electromechanical coupling factor improves 26.8%.Bulk acoustic resonator structure of the present invention can promote resonance
The electromechanical coupling factor of device, and not will produce additional spurious mode.
The present invention is also based on above-described embodiment and does further improvement.For example, in outermost interdigital electrode and piezoelectric layer
Position between corresponding edge is also provided with the groove along interdigital electrode length direction, and interdigital electrode here includes the interdigital electricity in top
Pole and bottom interdigital electrode.Here piezoelectric layer corresponding edge is understood that：When outermost interdigital electrode is rightmost side interdigital electrode
When, piezoelectric layer corresponding edge then finger pressure electric layer right side edge；When outermost interdigital electrode is leftmost side interdigital electrode, piezoelectric layer
Corresponding edge then finger pressure electric layer left side edge.
To improve the temperature compensation capability of resonator, negative temperature coefficient material, such as titanium dioxide can be also filled in the trench
Silicon.The negative temperature coefficient feature of negative temperature coefficient material and the ptc characteristics of piezoelectricity layer material mutually compensate for, and can avoid
Ambient temperature variation leads to larger resonance frequency shift, to can ensure that the quality and efficiency of resonator.
Be described in above-described embodiment illustrate the present invention, though text in illustrated by specific term, not
Protection scope of the present invention can be limited with this, be familiar with this technical field personage can understand the present invention spirit with it is right after principle
It changes or changes and reaches equivalent purpose, and this equivalent change and modification, should all be covered by right institute circle
Determine in scope.
Claims (10)
1. rf-resonator structure, the rf-resonator structure is Lamb wave filter construction, it is characterized in that：
The interdigital electricity of a certain number of top interdigital electrodes and bottom being respectively configured including piezoelectric layer and piezoelectric layer upper and lower surface
Pole；
Position of the piezoelectric layer upper surface between adjacent top interdigital electrode is equipped with along top interdigital electrode length direction
Groove；Meanwhile position of the piezoelectric layer lower surface between adjacent base interdigital electrode is equipped with along bottom interdigital electrode length
The groove in direction.
2. rf-resonator structure as described in claim 1, it is characterized in that：
The position that piezoelectric layer upper surface is located at the top of outermost between interdigital electrode and piezoelectric layer corresponding edge also is provided with along top
The groove of interdigital electrode length direction；Meanwhile piezoelectric layer lower surface is located at outermost side bottom interdigital electrode and piezoelectric layer corresponding sides
Position between edge also is provided with the groove along bottom interdigital electrode length direction.
3. rf-resonator structure, the rf-resonator structure is Lamb wave filter construction, it is characterized in that：
The interdigital electricity of a certain number of top interdigital electrodes and bottom being respectively configured including piezoelectric layer and piezoelectric layer upper and lower surface
Pole；
Piezoelectric layer upper surface is located at the position at the top of outermost between interdigital electrode and piezoelectric layer corresponding edge and is equipped with along top fork
Refer to the groove in electrode length direction；Meanwhile piezoelectric layer lower surface is located at outermost side bottom interdigital electrode and piezoelectric layer corresponding edge
Between position also be provided with the groove along bottom interdigital electrode length direction.
4. the rf-resonator structure as described in claims 1 or 2 or 3, it is characterized in that：
The cross sectional shape of the groove is arc, trapezoidal, rectangle or triangle.
5. the rf-resonator structure as described in claims 1 or 2 or 3, it is characterized in that：
Negative temperature coefficient material is filled in the groove.
6. rf-resonator structure, the rf-resonator structure is bulk acoustic resonator structure, it is characterized in that：
The a certain number of top interdigital electrodes configured including piezoelectric layer, piezoelectric layer upper surface and the configuration of piezoelectric layer lower surface
Bottom electrode plate；
Position of the piezoelectric layer upper surface between adjacent top interdigital electrode is equipped with along top interdigital electrode length direction
Groove.
7. rf-resonator structure as claimed in claim 6, it is characterized in that：
The position that piezoelectric layer upper surface is located at the top of outermost between interdigital electrode and piezoelectric layer corresponding edge also is provided with along top
The groove of interdigital electrode length direction.
8. rf-resonator structure, the rf-resonator structure is bulk acoustic resonator structure, it is characterized in that：
The a certain number of top interdigital electrodes configured including piezoelectric layer, piezoelectric layer upper surface and the configuration of piezoelectric layer lower surface
Bottom electrode plate；
Piezoelectric layer upper surface is located at the position at the top of outermost between interdigital electrode and piezoelectric layer corresponding edge and is equipped with along top fork
Refer to the groove in electrode length direction.
9. the rf-resonator structure as described in claim 6 or 7 or 8, it is characterized in that：
The cross sectional shape of the groove is arc, trapezoidal, rectangle or triangle.
10. the rf-resonator structure as described in claim 6 or 7 or 8, it is characterized in that：
Negative temperature coefficient material is filled in the groove.
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109639255A (en) * | 2018-12-25 | 2019-04-16 | 天津大学 | A kind of duplexer |
| CN110113026A (en) * | 2019-05-22 | 2019-08-09 | 武汉大学 | A kind of two dimension lamb wave resonator |
| CN110635778A (en) * | 2019-09-17 | 2019-12-31 | 武汉大学 | Monolithic integrated duplexer |
| CN112260656A (en) * | 2020-10-19 | 2021-01-22 | 广东广纳芯科技有限公司 | Lamb wave resonator and method for manufacturing the same |
| CN112332795A (en) * | 2020-11-17 | 2021-02-05 | 华中科技大学 | Lamb wave resonator with grooved surface |
| CN112332797A (en) * | 2020-10-29 | 2021-02-05 | 广东广纳芯科技有限公司 | Lamb wave resonator and method for manufacturing the same |
| CN112821878A (en) * | 2021-01-06 | 2021-05-18 | 武汉大学 | Pseudo-mode suppression type radio frequency resonator structure |
| CN112968685A (en) * | 2021-02-05 | 2021-06-15 | 武汉大学 | Bulk acoustic wave resonator with trench structure |
| CN112994647A (en) * | 2021-02-05 | 2021-06-18 | 武汉大学 | Ultrahigh frequency resonator with ring electrode structure |
| CN113726307A (en) * | 2021-08-18 | 2021-11-30 | 武汉大学 | Ultra-high frequency resonator with adjustable effective electromechanical coupling coefficient |
| CN113783547A (en) * | 2021-09-16 | 2021-12-10 | 武汉敏声新技术有限公司 | Resonator |
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