CN112332797B - Lamb wave resonator and method of manufacturing the same - Google Patents
Lamb wave resonator and method of manufacturing the same Download PDFInfo
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- 235000019687 Lamb Nutrition 0.000 title claims abstract description 109
- 238000004519 manufacturing process Methods 0.000 title claims description 20
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- 229910052751 metal Inorganic materials 0.000 claims description 10
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- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 5
- 229910013641 LiNbO 3 Inorganic materials 0.000 claims description 5
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 5
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- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
Abstract
The lamb wave resonator of the present invention includes: a substrate; a piezoelectric layer laminated on the substrate, the first main surface of the piezoelectric layer being parallel to the propagation direction of the lamb wave; and an interdigital electrode having a plurality of electrode fingers provided on a first main surface of the piezoelectric layer, wherein a direction in which the plurality of electrode fingers extend on the first main surface of the piezoelectric layer is perpendicular to a propagation direction of the lamb wave, wherein a plurality of grooves aligned in the extension direction of the electrode fingers are provided between every 2 adjacent electrode fingers on the first main surface of the piezoelectric layer, wherein the grooves are aligned with each other with the electrode fingers interposed therebetween, wherein a dimension of the grooves in the propagation direction of the lamb wave, that is, a width of the grooves is the same as a pitch between the adjacent 2 electrode fingers sandwiching the grooves, wherein a ratio r1 of a length of the grooves in the extension direction of the electrode fingers to a wavelength of the lamb wave is in a range of 0.4 to 0.6, and wherein a dimension of the grooves in the thickness direction of the piezoelectric layer, that is, a ratio r2 of a depth of the grooves to a thickness of the piezoelectric layer is in a range of 0.4 to 0.6.
Description
Technical Field
The invention relates to a lamb wave resonator and a manufacturing method thereof, and the lamb wave resonator can be used for a filter or a mobile phone radio frequency front end.
Background
With the rapid development of mobile communication and the requirement for high-speed transmission in the current market, the development of 5G mobile phone filters requires lower loss, higher frequency and larger bandwidth, which presents serious challenges for the existing Surface Acoustic Wave (SAW) and Bulk Acoustic Wave (BAW) technologies.
The lamb wave resonator has a structure adopting a plate wave mode, has higher sound velocity, can realize high-frequency transmission signals, can realize frequency modulation on the same wafer, has small volume and can be compatible with an IC process. The sound velocity of the lamb wave resonator adopting the lithium niobate or lithium tantalate single crystal sheet material can reach over 14000m/s, and the lamb wave resonator has great application advantages in sub-6GHz and millimeter wave mobile communication, so that the lamb wave resonator becomes a new round of research hot spot in the radio frequency field. Lamb wave resonators have many unresolved drawbacks, although they have many advantages. For example, signals of modes other than the main wave become clutter, so that interference can be generated to the main wave, and the parasitic mode of the lamb wave resonator generated by the clutter can seriously affect the performance of the device, and particularly, a plurality of ripples are generated around the resonance peak of the impedance curve, so that the quality of signal transmission is affected.
In view of the above, patent document 1 (CN 105337586A) discloses a structure that can significantly eliminate parasitic modes of a lamb wave resonator. As shown in fig. 8, the lamb wave resonator of patent document 1 has a plurality of convex structures provided on the side walls of the piezoelectric layer or the surfaces of the interdigital electrodes, thereby remarkably eliminating parasitic modes in the lamb wave resonator.
Further, as in patent document 2, there have been many patents which mention the application of phonon crystal structures to resonators to suppress spurious modes of spurious signals. The phononic crystal is a novel composite artificial acoustic material, and the periodic structure of the phononic crystal can strongly scatter and block the transmission of sound waves in a specific frequency band to form an acoustic forbidden band.
Prior art literature
Patent literature
Patent document 1: CN 105337586A
Patent document 2: CN201310210349.3
Disclosure of Invention
Technical problem to be solved by the invention
Patent document 1 discloses a method of suppressing parasitic modes in a lamb wave resonator by providing a plurality of bump structures on the side walls of a piezoelectric layer or on the surfaces of interdigital electrodes, but the process of providing bumps on the side walls of a piezoelectric layer or on the surfaces of electrodes in patent document 1 is complicated, and the suppressing effect is reduced due to process errors.
Patent document 2 discloses a surface acoustic wave resonator in which, as shown in fig. 9, phonon crystals are provided on a metal interdigital transducer, the phonon crystals are periodically distributed in the x direction and randomly distributed in the y direction, so that efficient passage of the surface acoustic wave in the x direction is realized, and effective reflection of energy in the y direction is realized, and finally, bound energy propagates in the x direction, thereby eliminating the influence of a high-order transverse wave mode on the frequency characteristic of the resonator, and improving the frequency response performance of the SAW resonator. However, the phonon crystal structure of patent document 2 is used for a surface acoustic wave resonator, and is not applicable to a lamb wave resonator. The lamb wave is a dispersion wave which only propagates along the horizontal direction, and the propagation mode is different from that of the surface acoustic wave and the bulk acoustic wave, so that the arrangement mode of the phonon crystal structure of the lamb wave resonator is different from that of the prior surface acoustic wave resonator.
The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a lamb wave resonator having a phonon crystal structure, which has not only a good clutter suppression effect but also a high resonance frequency, a high bandwidth, and a high electromechanical coupling coefficient.
Technical proposal for solving the technical problems
The present invention has been made in view of the above-mentioned problems, and an object thereof is to provide a lamb wave resonator including:
a substrate;
a piezoelectric layer stacked on the substrate, a first main surface of the piezoelectric layer being parallel to a propagation direction of lamb waves, the piezoelectric layer having a phonon crystal structure; and
an interdigital electrode having a plurality of electrode fingers provided on the first main surface of the piezoelectric layer, the plurality of electrode fingers extending in a direction perpendicular to a propagation direction of the lamb wave on the first main surface of the piezoelectric layer,
by providing a plurality of grooves aligned in the extending direction of the electrode fingers between every 2 adjacent electrode fingers on the first main surface of the piezoelectric layer, the adjacent grooves are aligned with each other across the electrode fingers,
the dimension of the groove in the propagation direction of the lamb wave, that is, the width of the groove is the same as the pitch between the adjacent 2 electrode fingers sandwiching the groove,
the dimension of the groove in the extending direction of the electrode finger, that is, the ratio of the length of the groove to the wavelength of lamb wave is r1, r1 is in the range of 0.4 to 0.6,
the dimension of the groove in the thickness direction of the piezoelectric layer, that is, the ratio of the depth of the groove to the thickness of the piezoelectric layer is r2, and r2 is in the range of 0.4 to 0.6.
Further, in the lamb wave resonator, the thickness of the piezoelectric layer is 0.4 to 0.5 times the lamb wave wavelength.
Further, in the lamb wave resonator, r1 and r2 satisfy a relationship of r1=r2.
Further, in the lamb wave resonator, in the extending direction of the electrode fingers, the grooves are spaced apart from each other by a distance equal to the length of the grooves.
Further, in the lamb wave resonator
A piezoelectric insulator (POI) structure is formed by forming an intermediate layer between the substrate and the piezoelectric layer.
Further, the material of the substrate in the lamb wave resonator is 4H-SiC.
Further, the material of the intermediate layer in the lamb wave resonator is SiO 2 。
Further, the piezoelectric layer in the lamb wave resonator is made of lithium niobate or lithium tantalate.
Further, the piezoelectric layer in the lamb wave resonator is made of 30 degrees YX-LiNbO 3 。
Further, in the lamb wave resonator, the interdigital electrode is formed of Ti, al, cu, au, pt, ag, pd, ni metal or alloy, or a laminate of these metals or alloys.
The invention also provides a manufacturing method of the lamb wave resonator, which is the manufacturing method of the lamb wave resonator,
the manufacturing method of the lamb wave resonator comprises the following steps:
a step of forming the substrate;
forming the piezoelectric layer on the substrate;
a step of forming the interdigital electrode on the first main surface of the piezoelectric layer such that an electrode finger of the interdigital electrode extends in a direction perpendicular to a propagation direction of the lamb wave on the first main surface of the piezoelectric layer; and
a step of grooving the piezoelectric layer such that a plurality of grooves aligned in the extending direction of the electrode fingers are formed between each 2 adjacent electrode fingers on the first main surface of the piezoelectric layer so that the piezoelectric layer has a photonic crystal structure, the adjacent grooves are aligned with each other across the electrode fingers,
the dimension of the groove in the propagation direction of the lamb wave, that is, the width of the groove is the same as the pitch between the adjacent 2 electrode fingers sandwiching the groove,
the dimension of the groove in the extending direction of the electrode finger, that is, the ratio of the length of the groove to the wavelength of lamb wave is r1, r1 is in the range of 0.4 to 0.6,
the dimension of the groove in the thickness direction of the piezoelectric layer, that is, the ratio of the depth of the groove to the thickness of the piezoelectric layer is r2, and r2 is in the range of 0.4 to 0.6.
Effects of the invention
According to the invention, the lamb wave resonator has a good clutter suppression effect, a high resonant frequency, a high bandwidth and a high electromechanical coupling coefficient.
Drawings
Fig. 1a is a plan view of a lamb wave resonator having a grooved piezoelectric layer surface according to embodiment 1 of the present invention.
Fig. 1b is a side view of the structure of a lamb wave resonator in which the surface of the piezoelectric layer is grooved according to embodiment 1 of the present invention.
Fig. 2 is a perspective view of the structure of a lamb wave resonator in which the surface of a piezoelectric layer is grooved according to embodiment 1 of the present invention.
Fig. 3 is a flow chart of manufacturing a lamb wave resonator according to embodiment 1 of the present invention.
Fig. 4 is a graph of admittance without grooves in the surface of the piezoelectric layer.
Fig. 5 is an admittance graph in the case where the ratio of the groove depth to the piezoelectric layer thickness on the surface of the piezoelectric layer according to embodiment 1 of the present invention is 0.4 and the ratio of the groove length to the wavelength of lamb wave is 0.4.
Fig. 6 is an admittance graph in the case where the ratio of the groove depth to the piezoelectric layer thickness on the surface of the piezoelectric layer according to embodiment 1 of the present invention is 0.5 and the ratio of the groove length to the wavelength of lamb wave is 0.5.
Fig. 7 is an admittance graph in the case where the ratio of the groove depth to the piezoelectric layer thickness on the surface of the piezoelectric layer according to embodiment 1 of the present invention is 0.6 and the ratio of the groove length to the wavelength of lamb wave is 0.6.
Fig. 8 is a schematic structural view of a lamb wave resonator with a piezoelectric layer surface free of grooves.
Fig. 9 is a schematic structural view of a surface acoustic wave resonator having a photonic crystal structure.
Detailed Description
The lamb wave resonator and the method of manufacturing the same according to the present invention will be described in detail below with reference to the accompanying drawings. In the specification, the same or similar reference numerals denote the same or similar components. The following description of embodiments of the present invention with reference to the accompanying drawings is intended to illustrate the general inventive concept and should not be taken as limiting the invention.
Embodiments of the present invention will be described below. In the description of the drawings below, the same or similar parts are denoted by the same or similar reference numerals. It should be noted that the drawings are only schematic, and the relationship between the thickness and the planar dimension, the ratio of the thicknesses of the respective layers, and the like are different from the actual ones. Accordingly, for a particular thickness or dimension, reference should be made to the following description for determination. In the description of the present invention, it should be understood that the directions or positional relationships indicated by the terms "upper", "lower", "front", "rear", "left", "right", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the apparatus to be referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.
In describing the present invention, an embodiment may be provided with a plurality of drawings, and reference numerals of the same components in the same embodiment are not necessarily labeled in each of the drawings, but it should be understood by those skilled in the art that when describing a certain drawing or drawings in the embodiment, it may be understood with reference to other drawings in the embodiment, it may be understood by those skilled in the art that when not specifying which drawing the text specifically corresponds to, it may be understood with reference to all the drawings in the embodiment.
Embodiment 1
[ basic Structure of lamb wave resonator ]
Fig. 1a is a plan view of a lamb wave resonator having a grooved piezoelectric layer surface according to embodiment 1 of the present invention. Fig. 1b is a side view of the structure of a lamb wave resonator in which the surface of the piezoelectric layer is grooved according to embodiment 1 of the present invention. Fig. 2 is a perspective view showing the structure of a lamb wave resonator having a groove formed in the surface of the piezoelectric layer 1 according to embodiment 1 of the present invention.
Referring to fig. 1a and 1b, a cartesian coordinate system is established, the propagation direction of lamb waves, i.e., the electrode width direction (i.e., the left-right direction in fig. 1a and 1 b) is the x-axis, the electrode length direction (i.e., the up-down direction in fig. 1 a) is the y-axis, and the thickness direction of the piezoelectric layer 1 (i.e., the up-down direction in fig. 1 b) is the z-axis.
The lamb wave resonator of the present invention has a piezoelectric thin film structure, and a substrate 4, an intermediate layer 3, a piezoelectric layer 1, and an interdigital electrode composed of a plurality of electrode fingers 2 are laminated in this order from bottom to top. Wherein the substrate 4 is made of single crystal 4H-SiC, and the intermediate layer 3 is made of SiO laminated on the substrate 4 2 The composition is formed. The piezoelectric layer 1 is composed of 30 YX-LiNbO laminated on the intermediate layer 3 3 The single crystal thin film is constituted by a first principal surface a of the piezoelectric layer 1 perpendicular to the z-axis direction, and a photonic crystal structure is formed on the first principal surface a, and a specific case of the photonic crystal structure will be described later. The interdigital electrode has a plurality of aluminum electrode fingers 2 provided on the first main surface a of the piezoelectric layer 1. The plurality of electrode fingers 2 are arranged on the first main surface a of the piezoelectric layer 1 at intervals in the x-axis direction and extend in the y-axis direction.
As shown in fig. 1a and 1b, on the first main surface a of the piezoelectric layer 1, between the adjacent 2 electrode fingers 2A plurality of grooves 6 extending in the y-axis direction are provided for the grooved portions in FIGS. 1a and 1bAnd (3) representing.
In fig. 1a and 1b, the number of electrode fingers 2 is 10, and 5 grooves 6 are arranged at intervals between every 2 adjacent electrode fingers 2, so that the total number of grooves is 45 in 5 rows and 9 columns. The specific values of the number of electrode fingers 2 and the number of slots herein are just one example and may vary depending on the actual situation.
As shown in fig. 1a, the grooves 6 are periodically arranged in a lattice shape between the electrode fingers 2 in a plan view, and the grooves 6 of each row and each column are aligned in the x-axis direction and the y-axis direction, respectively. In the x-axis direction, the width of each groove 6 is equal to w1 (as shown in fig. 1 b), and the intervals between the grooves 6 are equal to each other, and the width of the electrode finger 2 in the x-axis direction is equal to each other. In the y-axis direction, lengths L1 of the grooves 6 in the y-axis direction are equal to each other, and intervals between the respective grooves 6 are also equal to L2. In the example shown in fig. 1a and 1b, the interval L2 between 2 grooves 6 adjacent in the y-axis direction is equal to the length L1 of the groove 6 in the y-axis direction.
As shown in fig. 1b, in side view, the grooved region is seen to be the piezoelectric layer directly under the region between two adjacent electrode fingers 2, without grooves directly under the electrode fingers 2. The 2 sides perpendicular to the x-axis direction, i.e., the 2 sides parallel to the y-axis direction (left and right sides in the drawing) of the groove 6 are aligned with the sides of the electrode fingers 2 located on the left and right sides of the groove 6 so that the width w1 of the groove 6 in the x-axis direction is equal to the pitch w2 between the 2 electrode fingers 2 sandwiching the groove 6.
By forming the above-described grooved structure on the piezoelectric layer 1, the piezoelectric layer 1 is provided with a photonic crystal structure with the piezoelectric layer 1 as a base and the grooves 6 as a scatterer. In the present embodiment, air is used as the diffuser material, and other low sound velocity materials may be filled in the groove 6 instead of air, if necessary.
The inventors found that by providing the piezoelectric layer 1 with a specific phonon crystal structure by providing the piezoelectric layer 1 with appropriate slot length, depth, width and slot position, the lamb wave resonator can have an excellent forbidden band effect, and the clutter can be kept away from the operating frequency band, so that the clutter can be effectively suppressed. Next, referring to fig. 4 to 7, description will be made of the effect of embodiment 1 on noise suppression at different grooving depths and different grooving lengths (assuming that the ratio of the length L1 of the groove 6 to the wavelength of the lamb wave is r1, and assuming that the ratio of the depth d of the groove 6 to the thickness t of the piezoelectric layer 1, which is the dimension of the groove 6 in the z-axis direction, is r2, for example, r1=r2=0.4, r1=r2=0.5, and r1=r2=0.6).
Fig. 4 is a graph of admittance of a prior art piezoelectric layer 1 without grooves (d=0) on its surface. As can be seen from FIG. 4, there is significant clutter s2 interference around 2.75GHz, the electromechanical coupling coefficient k 2 36.51% was calculated according to the following formula (1).
Coefficient of electromechanical coupling k 2 ＝(π 2 /8)(f p 2 -f s 2 )/f s 2 (1)
Here, f s : frequency of resonance peak, f s1 ＝2.71GHz，f s2： Clutter frequency, f s2 ＝2.755GHz；f p1 : anti-resonance peak frequency, f p1 ＝3.085GHz。
The resonance bandwidth, i.e. the frequency difference f between the resonance peak s1 and the antiresonance peak p1 in the resonance curve p1 －f s1 =0.375 GHz, spur frequency f s2 The difference between the frequency of the resonant peak s1 and the frequency of the resonant peak s1 is Deltaf=f s2 －f s1 ＝0.045GHz。
FIG. 5 is a graph of admittance when the ratio of the groove depth to the thickness of the piezoelectric layer is 0.4, and the ratio of the length of the groove to the wavelength of the lamb wave is 0.4. As can be seen from FIG. 5, the electromechanical coupling coefficient k 2 =20.20% resonant peak frequency f s1 = 2.285GHz, spur frequency f s2 =2.675 GHz, antiresonant peak frequency f p1 =2.465 GHz, resonance bandwidth f p1 －f s1 =0.18 GHz, spur frequency f s2 The difference between the frequency of the resonant peak s1 and the frequency of the resonant peak s1 is Deltaf=f s2 －f s1 =0.39 GHz. In FIG. 5, the clutter s2 becomes far from the resonance peak s1 compared with FIG. 4, so that the clutter s2 interference is significantly reduced, the resonance frequency, the electromechanical coupling coefficient and the resonance bandThe width is maintained within an acceptable range.
Fig. 6 is an admittance graph when the ratio of the groove depth of the piezoelectric layer surface to the thickness of the piezoelectric layer is 0.5, and the ratio of the length of the groove to the wavelength of the lamb wave is 0.5. As can be seen from FIG. 6, the electromechanical coupling coefficient k 2 =16.96%, resonance peak frequency f s1 =2.105 GHz, spur frequency f s2 =2.615 GHz, antiresonance peak frequency f p1 = 2.245GHz, resonance bandwidth f p1 －f s1 =0.14 GHz, spur frequency f s2 The difference between the frequency of the resonant peak s1 and the frequency of the resonant peak s1 is Deltaf=f s2 －f s1 In fig. 6, clutter s2 is further away from resonance peak s1 compared to fig. 4, so that clutter s2 interference is further reduced, and the resonance frequency, electromechanical coupling coefficient and resonance bandwidth remain within acceptable ranges.
Fig. 7 is an admittance graph when the ratio of the groove depth of the piezoelectric layer surface to the thickness of the piezoelectric layer is 0.6, and the ratio of the length of the groove to the wavelength of the lamb wave is 0.6. As can be seen from FIG. 7, the electromechanical coupling coefficient k 2 =13.26% resonant peak frequency f s1 =1.91 GHz, spur frequency f s2 =2.53 GHz, antiresonance peak frequency f p1 =2.01 GHz, resonance bandwidth f p1 －f s1 =0.1 GHz, spur frequency f s2 The difference between the frequency of the resonant peak s1 and the frequency of the resonant peak s1 is Deltaf=f s2 －f s1 Compared to fig. 4, clutter s2 is further away from resonance peak s1 in fig. 7, so that clutter s2 interference is further reduced, and the resonance frequency, electromechanical coupling coefficient and resonance bandwidth remain within acceptable ranges.
Table 1 below shows clutter suppression, electromechanical coupling coefficients, and the like in the case where the ratio r2 of the depth d of the groove 6 to the thickness t of the piezoelectric layer and the ratio r1 of the length L1 of the groove to the wavelength of the lamb wave are different values.
TABLE 1
As can be seen from fig. 4 to 7 and table 1, when the thickness t of the piezoelectric layer 1 is the same, the piezoelectric layer 1 has a photonic crystal structure by grooving the surface of the piezoelectric layer 1, and thus the piezoelectric layer 1 can have a forbidden band effect. Along with the increase of the slotting depth d and the increase of the slotting length L1, the clutter s2 can be far away from the working frequency band, so that clutter interference is reduced, and the resonance bandwidth, the electromechanical coupling coefficient and the resonance frequency can be reduced, but still can be kept large enough to meet the working requirements of the resonator. The ratio r2 of the depth d of the surface groove 6 of the piezoelectric layer 1 to the thickness t of the piezoelectric layer is preferably in the range of 0.4 to 0.6, of which 0.5 is most preferred; the ratio r1 of the length L1 of the surface groove of the piezoelectric layer 1 to the wavelength of the lamb wave is preferably in the range of 0.4 to 0.6, with 0.5 being most preferred. When r1=r2=0.5, not only can clutter be kept away from the operating frequency band and clutter interference can be suppressed to be small enough, but also a sufficiently large resonance bandwidth, electromechanical coupling coefficient and resonance frequency can be maintained.
In embodiment 1 described above, the width w1 of the groove 6 may be changed for lamb waves of different frequencies. The widths w1 of the grooves 6 on the same piezoelectric layer 1 may be different from each other, but by making the widths w1 of the grooves 6 the same, the noise suppression effect can be optimally achieved.
In embodiment 1, the grooves 6 on the same piezoelectric layer have the same depth d, but may be set to different depths d. It is also possible to minimize manufacturing complexity and cost by making the depth d of each groove 6 identical to enlarge the applicable frequency range of the lamb wave resonator, so that it is most preferable to make each groove 6 have the same depth.
In embodiment 1, the grooves 6 on the same piezoelectric layer have the same length L1, but may be set to have different lengths L1. It is most preferable to have the respective slots 6 have the same length by making the lengths L1 of the respective slots 6 the same so that the lamb wave resonator has the best noise suppressing effect and also the manufacturing complexity and cost can be minimized.
In embodiment 1 described above, the adjacent two grooves 6 on the same piezoelectric layer have the same pitch L2 in the y-axis direction, but may be set to different pitches L2. It is most preferable to have the same spacing between the individual slots 6, since it is possible to provide the lamb wave resonator with the best noise rejection effect, and it is also possible to minimize manufacturing complexity and cost.
In embodiment 1 described above, the material of the substrate 4 is 4H-SiC, and Si may be used as the material of the substrate 4, but since 4H-SiC is a high acoustic velocity material, a lamb wave resonator using a 4H-SiC substrate has high acoustic impedance, can prevent leakage of energy to the substrate, and has a high Q value, the material of the substrate is preferably 4H-SiC.
In embodiment 1, the material of the piezoelectric layer 1 is 30 ° yx—linbo 3 The material of the piezoelectric layer 1 may be lithium niobate or lithium tantalate, but since 30 YX-LiNbO is used 3 As the material of the piezoelectric layer 1, a lamb wave resonator can obtain an extremely high electromechanical coupling coefficient, and therefore, the material of the piezoelectric layer 1 is preferably 30 YX-LiNbO 3 。
In embodiment 1 described above, the thickness of the piezoelectric layer 1 may be in the range of 0.05 to 1 times the lamb wave wavelength, but when the ratio of the thickness t of the piezoelectric layer 1 to the lamb wave wavelength is in the range of 0.4 to 0.5, a higher electromechanical coupling coefficient and a higher resonance frequency can be obtained, and therefore the thickness t of the piezoelectric layer 1 is preferably in the range of 0.4 to 0.5 times the lamb wave wavelength.
In embodiment 1, the interdigital electrode may be composed of Ti, al, cu, au, pt, ag, pd, ni metal or alloy, or a laminate of these metals or alloys.
In embodiment 1 described above, the intermediate layer 3 is formed between the substrate 4 and the piezoelectric layer 1, and the intermediate layer 3 may not be formed between the substrate 4 and the piezoelectric layer 1. However, by forming the intermediate layer 3, a piezoelectric insulator (POI) structure can be formed in the lamb wave resonator, and the lamb wave resonator has a high Q value, so that it is preferable to form the intermediate layer 3 between the substrate 4 and the piezoelectric layer 1. The material of the intermediate layer 3 may be SiO 2 But may be a low sound speed material of other oxides, but the material of the intermediate layer 3 is SiO 2 In this case, a high Q value can be obtained, and therefore the material of the intermediate layer 3 is preferably SiO 2 。
In addition, in embodiment 1 described above, the cross-sectional shape of the groove 6 may be a rectangle, an arc, an inverted trapezoid, an octagon, or other polygon.
[ manufacturing Process of lamb wave resonator ]
Fig. 3 is a flow chart of manufacturing a lamb wave resonator according to embodiment 1 of the present invention.
As shown in fig. 3, the present embodiment further provides a method for manufacturing a lamb wave resonator, including the steps of:
step S11: a substrate of single crystal 4H-SiC is selected as a substrate 1, and the substrate 1 is immersed and washed sequentially with a mixed solution of acetone, sulfuric acid and hydrogen peroxide, and after the washing is completed, the substrate is immersed and washed in N 2 Drying the monocrystalline Si substrate in the atmosphere, and then mechanically polishing the substrate 1;
step S12: deposition of SiO on a clean substrate 1 by means of metal organic chemical vapor deposition 2 An intermediate layer 3 of (a);
step S13: 30 degree YX-LiNbO is stripped and bonded by ion beam 3 Transfer of piezoelectric film to SiO 2 Forming a piezoelectric layer 1 on the intermediate layer 3, and then purging with nitrogen to remove reaction residues and gaseous byproducts;
step S14: at a temperature of 30 degrees YX-LiNbO 3 Electrode patterns made of Al are deposited on the piezoelectric layer 1 formed by the piezoelectric film, and redundant metal materials are removed by wet etching, so that 10 patterned electrodes, namely electrode fingers 2, are formed, and the electrode fingers 2 extend along the y-axis direction on the first main surface a of the piezoelectric layer 1;
step S15:
the grooves 6 are formed in the first main surface a of the piezoelectric layer 1 by wet etching such that 5 grooves 6 extending in the y-axis direction are arranged at intervals between every 2 adjacent electrode fingers 2 on the first main surface a of the piezoelectric layer 1, and the total number of grooves is 45 in total of 5 rows and 9 columns. The grooves 6 are arranged periodically in a lattice shape between the electrode fingers 2 in a plan view, and the grooves 6 of each row and each column are aligned along the x-axis direction and the y-axis direction, respectively. In the x-axis direction, the width of each groove 6 is equal to w1, the intervals between the grooves 6 are equal to each other, and the widths of the electrode fingers 2 in the x-axis direction are equal to each other. In the y-axis direction, lengths L1 of the grooves 6 in the y-axis direction are equal to each other, and intervals between the respective grooves 6 are also equal to L2, and intervals L2 between 2 grooves 6 adjacent in the y-axis direction are equal to lengths L1 of the grooves 6 in the y-axis direction. In side view, the grooved region is seen to be the piezoelectric layer directly under the region between two adjacent electrode fingers 2, without grooves directly under the electrode fingers 2. The width w1 of the groove 6 on the piezoelectric layer 1 in the x-axis direction is set by photolithography such that 2 sides of the groove 6 perpendicular to the x-axis direction, i.e., 2 sides parallel to the y-axis direction are aligned with the sides of the electrode fingers 2 located on the left and right sides of the groove 6, so that the width w1 of the groove 6 in the x-axis direction is equal to the pitch w2 between the 2 electrode fingers 2 sandwiching the groove 6. The depth d of each groove 6 is set to 0.5 times the thickness t of the piezoelectric layer 1. By forming the above-described grooved structure on the piezoelectric layer 1, with the piezoelectric layer 1 as a base and the grooves 6 as a scatterer, a phonon crystal structure is formed on the first main surface a of the piezoelectric layer 1,
thereafter, the preparation of the lamb wave resonator is ended.
According to the manufacturing process of the lamb wave resonator, the lamb wave resonator can be manufactured, and has the advantages of good clutter suppression effect, high resonant frequency, high bandwidth and high electromechanical coupling coefficient.
In step S11 of the above-described manufacturing process of the lamb wave resonator, a substrate of single crystal SiC may be selected as the substrate 1 instead of the substrate of single crystal 4H-SiC.
In the above step S12, a low sound velocity material of other oxides may be used instead of SiO 2 The intermediate layer 3 may be formed by omitting step S12, and the piezoelectric layer 1 may be directly formed on the substrate 4 without forming the intermediate layer 3.
In the above step S13, a lithium tantalate piezoelectric film or a lithium niobate piezoelectric film may be used instead of 30 YX-LiNbO 3 The piezoelectric film forms the piezoelectric layer 1.
In the above step S14, an electrode pattern composed of Ti, cu, au, pt, ag, pd, ni metal or alloy, or a laminate of these metals or alloys, may be deposited on the piezoelectric layer 1.
In the above step S15, the grooves 6 may be opened by other methods such as dry etching, the lengths L1 of the respective grooves 6 in the y-axis direction may be unequal to each other, the intervals L2 between the adjacent 2 grooves 6 in the y-axis direction may be unequal to the lengths L1 of the grooves 6, the widths w1 of the grooves 6 may be unequal to the intervals w2 between the 2 electrode fingers 2 sandwiching the grooves 6, and the depths d of the respective grooves 6 may be unequal.
It should be noted that the above-mentioned embodiments only illustrate the present invention in detail, and should not be taken as limiting the invention. While specific embodiments of the invention have been described above, it will be appreciated by those skilled in the art that this is by way of example only, and the scope of the invention is defined by the appended claims. Various changes and modifications to these embodiments may be made by those skilled in the art without departing from the principles and spirit of the invention, but such changes and modifications fall within the scope of the invention.
Industrial applicability
According to the lamb wave resonator and the method for manufacturing the lamb wave resonator of the present invention, it is possible to provide a lamb wave resonator having a good clutter suppression effect while having a high electromechanical coupling coefficient and a high resonance frequency. By applying such a lamb wave resonator to a device such as a filter, the performance of the device can be advantageously improved.
Description of the reference numerals
1. Piezoelectric layer
2. Electrode finger
3. Intermediate layer
4. Substrate and method for manufacturing the same
6. A groove.
Claims (11)
1. A lamb wave resonator, comprising:
a substrate;
a piezoelectric layer stacked on the substrate, a first main surface of the piezoelectric layer being parallel to a propagation direction of lamb waves, the piezoelectric layer having a phonon crystal structure; and
an interdigital electrode having a plurality of electrode fingers provided on the first main surface of the piezoelectric layer, the plurality of electrode fingers extending in a direction perpendicular to a propagation direction of the lamb wave on the first main surface of the piezoelectric layer,
by providing a plurality of grooves aligned in the extending direction of the electrode fingers between every 2 adjacent electrode fingers on the first main surface of the piezoelectric layer, the adjacent grooves are aligned with each other across the electrode fingers,
the dimension of the groove in the propagation direction of the lamb wave, that is, the width of the groove is the same as the pitch between the adjacent 2 electrode fingers sandwiching the groove,
the dimension of the groove in the extending direction of the electrode finger, that is, the ratio of the length of the groove to the wavelength of lamb wave is r1, r1 is in the range of 0.4 to 0.6,
the dimension of the groove in the thickness direction of the piezoelectric layer, that is, the ratio of the depth of the groove to the thickness of the piezoelectric layer is r2, and r2 is in the range of 0.4 to 0.6.
2. A lamb wave resonator according to claim 1, wherein,
the thickness of the piezoelectric layer is 0.4 to 0.5 times the lamb wave wavelength.
3. A lamb wave resonator according to claim 1, wherein,
r1 and r2 satisfy the relationship r1=r2.
4. A lamb wave resonator according to claim 1, wherein,
the grooves are spaced apart from each other by a distance equal to the length of the grooves in the extending direction of the electrode fingers.
5. A lamb wave resonator according to claim 1 to 4,
a piezoelectric insulator (POI) structure is formed by forming an intermediate layer between the substrate and the piezoelectric layer.
6. A lamb wave resonator according to claim 5, wherein,
the material of the substrate is 4H-SiC.
7. A lamb wave resonator according to claim 5, wherein,
the material of the intermediate layer is SiO 2 。
8. A lamb wave resonator according to claim 5, wherein,
the piezoelectric layer is made of lithium niobate or lithium tantalate.
9. A lamb wave resonator according to claim 8,
the piezoelectric layer is made of 30 degrees YX-LiNbO 3 。
10. A lamb wave resonator according to claim 1, wherein,
the interdigital electrode is composed of Ti, al, cu, au, pt, ag, pd, ni metal or alloy, or a laminate of these metals or alloys.
11. A method for manufacturing a lamb wave resonator according to any one of claims 1 to 10, characterized in that,
the manufacturing method of the lamb wave resonator comprises the following steps:
a step of forming the substrate;
forming the piezoelectric layer on the substrate;
a step of forming the interdigital electrode on the first main surface of the piezoelectric layer such that an electrode finger of the interdigital electrode extends in a direction perpendicular to a propagation direction of the lamb wave on the first main surface of the piezoelectric layer; and
a step of grooving the piezoelectric layer so that a plurality of grooves aligned in the extending direction of the electrode fingers are formed between each 2 adjacent electrode fingers on the first main surface of the piezoelectric layer to thereby form a photonic crystal structure in the piezoelectric layer, the adjacent grooves being aligned with each other across the electrode fingers,
the dimension of the groove in the propagation direction of the lamb wave, that is, the width of the groove is the same as the pitch between the adjacent 2 electrode fingers sandwiching the groove,
the dimension of the groove in the extending direction of the electrode finger, that is, the ratio of the length of the groove to the wavelength of lamb wave is r1, r1 is in the range of 0.4 to 0.6,
the dimension of the groove in the thickness direction of the piezoelectric layer, that is, the ratio of the depth of the groove to the thickness of the piezoelectric layer is r2, and r2 is in the range of 0.4 to 0.6.
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| CN113794458B (en) * | 2021-09-16 | 2023-09-29 | 无锡市好达电子股份有限公司 | Surface acoustic wave device with composite film layer |
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| CN113810014A (en) * | 2021-09-23 | 2021-12-17 | 武汉敏声新技术有限公司 | Interdigital bulk acoustic wave resonator and filter |
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