CN108538925A - A kind of silicon carbide junction barrier schottky diodes - Google Patents
A kind of silicon carbide junction barrier schottky diodes Download PDFInfo
- Publication number
- CN108538925A CN108538925A CN201810622789.2A CN201810622789A CN108538925A CN 108538925 A CN108538925 A CN 108538925A CN 201810622789 A CN201810622789 A CN 201810622789A CN 108538925 A CN108538925 A CN 108538925A
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- Prior art keywords
- type ion
- octagon
- ion implantation
- square
- implantation doping
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 16
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 16
- 230000004888 barrier function Effects 0.000 title claims abstract description 15
- 238000005468 ion implantation Methods 0.000 claims abstract description 38
- 150000002500 ions Chemical class 0.000 claims description 7
- 230000015556 catabolic process Effects 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a kind of silicon carbide junction barrier schottky diodes, it is characterised in that：P-type ion implantation doping area (2) with octagon and square, also, octagon p-type ion implantation doping area (21) and square p-type ion implantation doping area (22) are equidistantly alternately arranged.SIC JBS devices provided by the invention, it is square by designing its p-type ion implantation doping area and octagon, while alternately equidistant arrangement design, so that the area utilization higher in device chip area, the area factor for obtaining bigger, so that the forward current density bigger of device.
Description
Technical field
The present invention relates to semiconductor devices, more particularly, to a kind of silicon carbide of improvement p-type ion implantation doping area design
Junction barrier schottky diode.
Background technology
In SIC JBS (silicon carbide junction barrier schottky diodes) device, Pgrid (p-type ion implantation doping area) is
Prevent electric current by region, in the mainstream device of current SIC JBS, the structure of Pgrid be designed to mostly it is as shown in Figure 1 just
Hexagon and elongate in shape as shown in Figure 2, however the design of both mainstreams is still weak in the utilization of area, area because
Son is to be improved.
The disclosure of background above technology contents is only used for inventive concept and the technical solution that auxiliary understands the present invention, not
The prior art for necessarily belonging to present patent application, no tangible proof show the above present patent application the applying date
Before have disclosed in the case of, above-mentioned background technology should not be taken to evaluation the application novelty and creativeness.
Invention content
It is a kind of by improving the design of p-type ion implantation doping plot structure it is a primary object of the present invention to propose, to improve
The silicon carbide junction barrier schottky diodes of area factor, to overcome the problems, such as that existing structure design area utilization is not high.
The present invention proposes following technical scheme for the above-mentioned purpose：
A kind of silicon carbide junction barrier schottky diodes, the p-type ion implantation doping area with octagon and square,
Also, octagon p-type ion implantation doping area and square p-type ion implantation doping area are equidistantly alternately arranged.
Further, the longitudinal thickness in each p-type ion implantation doping area is identical.
Further, the octagon p-type ion implantation doping area and the square p-type ion implantation doping area
It equidistantly is alternately arranged to form symmetrical pattern, the symmetrical pattern meets central symmetry and axial symmetry simultaneously.
Further, it is mixed per a pair of adjacent square p-type ion implantation doping area and octagon p-type ion implanting
The two of which parallel edges of miscellaneous area, square two of which parallel edges and octagon is mutually parallel.
Further, the institute between octagon p-type ion implantation doping area and square p-type ion implantation doping area
State nearest the distance between two parallel edges of distance between square and octagon that spacing is adjacent.
Further, the length of side phase in square p-type ion implantation doping area and octagon p-type ion implantation doping area
Together.
Further, the spacing is arranged according to forward conduction electric current and breakdown reverse voltage.
SIC JBS devices provided by the invention are square and positive eight side by designing its p-type ion implantation doping area
Shape, while alternately equidistant arrangement design, so that the area utilization higher in device chip area, obtains the area factor of bigger,
So that the forward current density bigger of device.
Description of the drawings
Fig. 1 is the regular hexagon Pgrid structural schematic diagrams of existing SIC JBS devices；
Fig. 2 is the strip Pgrid structural schematic diagrams of existing SIC JBS devices；
Fig. 3 is the Pgrid structural schematic diagrams of the SIC JBS devices of one embodiment of the present invention；
Fig. 4 is the sectional view of the chip region of the SIC JBS devices with Pgrid structures shown in Fig. 3.
Specific implementation mode
The invention will be further described with specific embodiment below in conjunction with the accompanying drawings.
Silicon carbide junction barrier schottky diodes (or being " SIC JBS devices ") have the chip regions cell and terminal
Termination environment.Wherein, the p-type ion implantation doping area (can referred to as " Pgrid ") of chip region be prevent electric current by region, in device
When part reversely turns off, Pgrid can widen PN junction width of depletion region because of the reason of PN junction adds backward voltage, to turn off electricity
Stream realizes device reverse current cut-off characteristics；Other regions of chip region are current lead-through region.Area factor is characterization device
One of parameter of performance, identical in other parameters, area factor is bigger, represents area utilization height, forward current
Density is bigger.Area factor=(the chip region gross area-Pgrid gross areas)/chip region gross area.
The specific implementation mode of the present invention provides a kind of area factor bigger, the silicon carbide knot gesture of forward current density bigger
Schottky diode is built, as shown in figure 3, the shape in its p-type ion implantation doping area has square and octagon, positive eight side
XingPXing ion implantation dopings area 21 and square p-type ion implantation doping area 22 are equidistantly alternately arranged.Adjacent two
Spacing between Pgrid is S, and the width in octagon p-type ion implantation doping area 21 is W.
Be illustrated in figure 4 the sectional view of the chip region of the SIC JBS devices with Pgrid structures shown in Fig. 3, each p-type from
2 longitudinal thickness h having the same of son injection doped region.As the chip regions Fig. 4 are followed successively by Ni/Ti/Al metal layers 1, p-type from top to bottom
Ion implantation doping area 2, SIC n- drift layers 3, SIC n+ buffer layers 4,4H-SIC substrates 5, Ni/Ti/Ag metal layers 6.
As shown in figure 3, in a kind of preferred embodiment, the octagon p-type ion implantation doping area 21 and described
Square p-type ion implantation doping area 22 equidistantly is alternately arranged to form symmetrical pattern, and the symmetrical pattern meets center simultaneously
Symmetrical and axial symmetry (symmetry axis is as shown in phantom in Figure 3).
With continued reference to Fig. 3, per a pair of adjacent square p-type ion implantation doping area 22 and octagon p-type ion note
Enter doped region 21, the two of which parallel edges of square two of which parallel edges and octagon is mutually parallel.
It is two adjacent Pgrid for example, the square 22 marked in Fig. 3 and octagon 21, square two
Two of which parallel edges c, d of parallel edges a, b and octagon are mutually parallel.21 He of octagon p-type ion implantation doping area
The interval S between square p-type ion implantation doping area 22 is that distance is nearest between adjacent square and octagon
The distance between two parallel edges, such as while a and while the distance between c be the spacing.
The interval S can specifically require (such as need of forward conduction electric current and breakdown reverse voltage according to properties of product
Ask) design suitable spacing.The more big then forward current of interval S is bigger, but breakdown reverse voltage can reduce, need to take into account this two
It is a because usually designing suitable interval S.
In more preferred embodiment, square p-type ion implantation doping area 22 and octagon p-type ion implanting are mixed
The length of side in miscellaneous area 21 is identical.
Compared with the structure design of traditional hexagon Pgrid and strip Pgrid, in width W and the identical feelings of interval S
Under condition, the Pgrid structure designs of octagon combination square arrangement of the invention combination can effectively improve SIC JBS devices
Area factor, to improve the forward current density of device, and do not cause the degeneration of other electrology characteristics of device.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that
The specific implementation of the present invention is confined to these explanations.For those skilled in the art to which the present invention belongs, it is not taking off
Under the premise of from present inventive concept, several equivalent substitute or obvious modifications can also be made, and performance or use is identical, all answered
When being considered as belonging to protection scope of the present invention.
Claims (7)
1. a kind of silicon carbide junction barrier schottky diodes, it is characterised in that：P-type ion note with octagon and square
Enter doped region (2), also, octagon p-type ion implantation doping area (21) and square p-type ion implantation doping area (22) etc.
Spacing is alternately arranged.
2. silicon carbide junction barrier schottky diodes as described in claim 1, it is characterised in that：Each p-type ion implanting
The longitudinal thickness (h) of doped region (2) is identical.
3. silicon carbide junction barrier schottky diodes as described in claim 1, it is characterised in that：The octagon p-type from
Son injection doped region (21) and the square p-type ion implantation doping area (22) equidistantly are alternately arranged to form symmetrical pattern,
The symmetrical pattern meets central symmetry and axial symmetry simultaneously.
4. silicon carbide junction barrier schottky diodes as claimed in claim 3, it is characterised in that：Per a pair of adjacent square
P-type ion implantation doping area (22) and octagon p-type ion implantation doping area (21), square two of which parallel edges with
The two of which parallel edges of octagon is mutually parallel.
5. silicon carbide junction barrier schottky diodes as claimed in claim 4, it is characterised in that：Octagon p-type ion is noted
It is adjacent square and just to enter the spacing (S) between doped region (21) and square p-type ion implantation doping area (22)
Nearest the distance between two parallel edges of distance between octagon.
6. silicon carbide junction barrier schottky diodes as claimed in claim 4, it is characterised in that：Square p-type ion implanting
Doped region (22) is identical with the length of side in octagon p-type ion implantation doping area (21).
7. silicon carbide junction barrier schottky diodes as claimed in claim 4, it is characterised in that：The spacing (S) is according to just
It is arranged to conducting electric current and breakdown reverse voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810622789.2A CN108538925B (en) | 2018-06-15 | 2018-06-15 | Silicon carbide junction barrier Schottky diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810622789.2A CN108538925B (en) | 2018-06-15 | 2018-06-15 | Silicon carbide junction barrier Schottky diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108538925A true CN108538925A (en) | 2018-09-14 |
| CN108538925B CN108538925B (en) | 2024-05-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810622789.2A Active CN108538925B (en) | 2018-06-15 | 2018-06-15 | Silicon carbide junction barrier Schottky diode |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111261723A (en) * | 2018-11-30 | 2020-06-09 | 全球能源互联网研究院有限公司 | SiC JBS device |
| CN111261724A (en) * | 2018-11-30 | 2020-06-09 | 全球能源互联网研究院有限公司 | Layout method of SiC JBS device |
| CN114284344A (en) * | 2021-12-23 | 2022-04-05 | 电子科技大学 | Silicon carbide junction barrier Schottky diode for optimizing current distribution |
| CN114284343A (en) * | 2021-12-23 | 2022-04-05 | 电子科技大学 | Silicon carbide junction barrier Schottky diode suitable for high temperature environment |
Citations (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09129867A (en) * | 1995-10-27 | 1997-05-16 | Nec Corp | Semiconductor device |
| JPH09213951A (en) * | 1996-01-30 | 1997-08-15 | Toshiba Corp | Semiconductor device |
| US6340836B1 (en) * | 1999-04-26 | 2002-01-22 | Rohm Co., Ltd. | Semiconductor device for rectifying |
| JP2005045212A (en) * | 2003-07-04 | 2005-02-17 | Matsushita Electric Ind Co Ltd | Schottky barrier diode and manufacturing method thereof |
| US20090224354A1 (en) * | 2008-03-05 | 2009-09-10 | Cree, Inc. | Junction barrier schottky diode with submicron channels |
| JP2010003841A (en) * | 2008-06-19 | 2010-01-07 | Toyota Motor Corp | Vertical type schottky diode |
| EP2154726A2 (en) * | 2008-08-14 | 2010-02-17 | Acreo AB | A method for producing a JBS diode |
| DE102012219510A1 (en) * | 2011-10-28 | 2013-05-02 | Hitachi, Ltd. | Semiconductor device |
| KR20130049916A (en) * | 2011-11-07 | 2013-05-15 | 현대자동차주식회사 | Silicon carbide schottky barrier diode and manufacturing method for the same |
| JP2013115394A (en) * | 2011-12-01 | 2013-06-10 | Hitachi Ltd | Junction barrier schottky diode |
| CN103545382A (en) * | 2013-11-12 | 2014-01-29 | 株洲南车时代电气股份有限公司 | Junction-barrier controlled Schottky diode and manufacturing method thereof |
| US20140175559A1 (en) * | 2012-12-20 | 2014-06-26 | Industrial Technology Research Institute | Integrated device having mosfet cell array embedded with barrier schottky diode |
| CN104201212A (en) * | 2014-04-21 | 2014-12-10 | 西安电子科技大学 | Floating junction silicon carbide SBD device with block-shaped groove and buried layer |
| US20150255544A1 (en) * | 2014-03-10 | 2015-09-10 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor device and manufacturing method of the same |
| US20150380570A1 (en) * | 2014-06-25 | 2015-12-31 | Synaptics Display Devices Gk | Junction barrier schottky diode and method for manufacturing the same |
| US20160005883A1 (en) * | 2014-07-02 | 2016-01-07 | Hestia Power Inc. | Silicon carbide semiconductor device |
| US20160315203A1 (en) * | 2015-04-22 | 2016-10-27 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor device having barrier region and edge termination region enclosing barrier region |
| US20160351560A1 (en) * | 2015-05-27 | 2016-12-01 | Toyota Jidosha Kabushiki Kaisha | Schottky barrier diode |
| US9887285B1 (en) * | 2016-09-21 | 2018-02-06 | Kabushiki Kaisha Toshiba | Semiconductor device |
| CN208521942U (en) * | 2018-06-15 | 2019-02-19 | 深圳基本半导体有限公司 | A kind of silicon carbide junction barrier schottky diodes |
-
2018
- 2018-06-15 CN CN201810622789.2A patent/CN108538925B/en active Active
Patent Citations (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09129867A (en) * | 1995-10-27 | 1997-05-16 | Nec Corp | Semiconductor device |
| JPH09213951A (en) * | 1996-01-30 | 1997-08-15 | Toshiba Corp | Semiconductor device |
| US6340836B1 (en) * | 1999-04-26 | 2002-01-22 | Rohm Co., Ltd. | Semiconductor device for rectifying |
| JP2005045212A (en) * | 2003-07-04 | 2005-02-17 | Matsushita Electric Ind Co Ltd | Schottky barrier diode and manufacturing method thereof |
| US20090224354A1 (en) * | 2008-03-05 | 2009-09-10 | Cree, Inc. | Junction barrier schottky diode with submicron channels |
| JP2010003841A (en) * | 2008-06-19 | 2010-01-07 | Toyota Motor Corp | Vertical type schottky diode |
| EP2154726A2 (en) * | 2008-08-14 | 2010-02-17 | Acreo AB | A method for producing a JBS diode |
| DE102012219510A1 (en) * | 2011-10-28 | 2013-05-02 | Hitachi, Ltd. | Semiconductor device |
| KR20130049916A (en) * | 2011-11-07 | 2013-05-15 | 현대자동차주식회사 | Silicon carbide schottky barrier diode and manufacturing method for the same |
| JP2013115394A (en) * | 2011-12-01 | 2013-06-10 | Hitachi Ltd | Junction barrier schottky diode |
| US20140175559A1 (en) * | 2012-12-20 | 2014-06-26 | Industrial Technology Research Institute | Integrated device having mosfet cell array embedded with barrier schottky diode |
| CN103545382A (en) * | 2013-11-12 | 2014-01-29 | 株洲南车时代电气股份有限公司 | Junction-barrier controlled Schottky diode and manufacturing method thereof |
| US20150255544A1 (en) * | 2014-03-10 | 2015-09-10 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor device and manufacturing method of the same |
| CN104201212A (en) * | 2014-04-21 | 2014-12-10 | 西安电子科技大学 | Floating junction silicon carbide SBD device with block-shaped groove and buried layer |
| US20150380570A1 (en) * | 2014-06-25 | 2015-12-31 | Synaptics Display Devices Gk | Junction barrier schottky diode and method for manufacturing the same |
| US20160005883A1 (en) * | 2014-07-02 | 2016-01-07 | Hestia Power Inc. | Silicon carbide semiconductor device |
| US20160315203A1 (en) * | 2015-04-22 | 2016-10-27 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor device having barrier region and edge termination region enclosing barrier region |
| US20160351560A1 (en) * | 2015-05-27 | 2016-12-01 | Toyota Jidosha Kabushiki Kaisha | Schottky barrier diode |
| US9887285B1 (en) * | 2016-09-21 | 2018-02-06 | Kabushiki Kaisha Toshiba | Semiconductor device |
| CN208521942U (en) * | 2018-06-15 | 2019-02-19 | 深圳基本半导体有限公司 | A kind of silicon carbide junction barrier schottky diodes |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111261723A (en) * | 2018-11-30 | 2020-06-09 | 全球能源互联网研究院有限公司 | SiC JBS device |
| CN111261724A (en) * | 2018-11-30 | 2020-06-09 | 全球能源互联网研究院有限公司 | Layout method of SiC JBS device |
| CN114284344A (en) * | 2021-12-23 | 2022-04-05 | 电子科技大学 | Silicon carbide junction barrier Schottky diode for optimizing current distribution |
| CN114284343A (en) * | 2021-12-23 | 2022-04-05 | 电子科技大学 | Silicon carbide junction barrier Schottky diode suitable for high temperature environment |
| CN114284343B (en) * | 2021-12-23 | 2023-04-07 | 电子科技大学 | Silicon carbide junction barrier Schottky diode suitable for high temperature environment |
| CN114284344B (en) * | 2021-12-23 | 2023-04-28 | 电子科技大学 | Silicon carbide junction barrier Schottky diode for optimizing current distribution |
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| Publication number | Publication date |
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| CN108538925B (en) | 2024-05-14 |
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