CN114284344A - Silicon carbide junction barrier Schottky diode for optimizing current distribution - Google Patents
Silicon carbide junction barrier Schottky diode for optimizing current distribution Download PDFInfo
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Abstract
The invention provides a silicon carbide junction barrier Schottky diode with optimized current distribution, which comprises an ohmic contact electrode, a silicon carbide N + substrate, a silicon carbide N-epitaxial layer, a Schottky contact electrode and a plurality of ion implantation area units, wherein the ion implantation area units are periodically arranged on the upper layer in the silicon carbide N-epitaxial layer; the upper part of the silicon carbide N-type epitaxial layer is a current diffusion area, the current of the current diffusion area is optimally distributed through the arrangement of the ion injection area, and the specific principle is that the current is diffused in more directions in the diffusion area, so that the current is more uniformly distributed, the thermal power distribution caused by current conduction is more uniform, the forward conduction temperature of the device is reduced, and the reliability of the device is improved.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a silicon carbide junction barrier Schottky diode with optimized current distribution.
Background
The third-generation semiconductor silicon carbide (SiC) belongs to a wide-bandgap semiconductor material, has the characteristics of high saturated electron drift velocity, high breakdown electric field intensity, high thermal conductivity, high dielectric constant radiation resistance and the like, has the thermal conductivity which is three times that of GaN compared with gallium nitride (GaN) which is also the same as the third-generation semiconductor material, and can reach the breakdown voltage higher than that of the GaN, so the third-generation semiconductor silicon carbide (SiC) has more advantages in the high-temperature and high-voltage fields, is suitable for the high-temperature and high-power field of 600V or even more than 1200V, such as new energy automobiles, automobile quick-charging piles, photovoltaics and power grids.
Silicon carbide junction barrier schottky diodes (JBS) have found wide application in power rectification, inverter freewheeling, and Power Factor Correction (PFC) systems due to their advantages of good heat dissipation, high breakdown voltage, low on-resistance, and near-zero switching loss.
For large current SiC JBS (rated current above 50A), conduction loss is dominant in forward operation, and due to self-heating effect, the chip temperature rises, causing severe thermal management limitation of the device. In each JBS cell, the current is usually concentrated near the edge of the ion implantation area, while the current density is the lowest at the center of the Schottky junction, and the phenomenon of uneven current distribution becomes more obvious as the cell is increased, so that the temperature of the chip in forward conduction is increased. Shrinking the cell is an effective way to optimize the current distribution, but the cell has a minimum width due to the limitation of the depth of the ion implantation region. Therefore, a new layout is desired to further optimize the current distribution in the cells, thereby reducing the overall temperature of the JBS.
Disclosure of Invention
The invention aims to solve the defects in the existing technical problem, provides a layout of a SiC JBS device for optimizing current distribution, and relieves the phenomenon of uneven current distribution in JBS cells.
In order to achieve the purpose, the technical scheme of the invention is as follows:
the invention provides a first silicon carbide junction barrier Schottky diode with optimized current distribution, which comprises an ohmic contact electrode 1, a silicon carbide N + substrate 2, a silicon carbide N-epitaxial layer 3, a Schottky contact electrode 4 and a plurality of ion injection region units 5;
the ohmic contact electrode 1, the silicon carbide N + substrate 2 and the silicon carbide N-epitaxial layer 3 are sequentially stacked from bottom to top; a plurality of ion implantation area units 5 are periodically arranged on the upper layer in the silicon carbide N-epitaxial layer 3; the Schottky contact electrode 4 is positioned above the plurality of ion implantation region units 5;
each ion implantation region unit 5 includes: 4 square injection regions 9, wherein the 4 square injection regions 9 are positioned at four corners of the rectangle, and a central square injection region 91 is arranged at the center of the rectangle; the length of the long side of the rectangle is 2a, the length of the short side of the rectangle is a, the transverse strip-shaped injection region 6 transversely penetrates through the centers of each square injection region 9 and the central square injection region 91, and the longitudinal strip-shaped injection region 7 longitudinally penetrates through the centers of each square injection region 9 and the central square injection region 91. And the region defined by the square injection region 9, the central square injection region 91, the transverse strip injection region 6 and the longitudinal strip injection region 7 is a Schottky contact region 8.
The invention provides a second silicon carbide junction barrier Schottky diode with optimized current distribution, which comprises an ohmic contact electrode 1, a silicon carbide N + substrate 2, a silicon carbide N-epitaxial layer 3, a Schottky contact electrode 4 and a plurality of ion injection region units 5;
the ohmic contact electrode 1, the silicon carbide N + substrate 2 and the silicon carbide N-epitaxial layer 3 are sequentially stacked from bottom to top; a plurality of ion implantation area units 5 are periodically arranged on the upper layer in the silicon carbide N-epitaxial layer 3; the Schottky contact electrode 4 is positioned on the plurality of ion implantation regions 5;
each ion implantation region unit 5 includes: 4 square injection regions 9, wherein the 4 square injection regions 9 are positioned at four corners of the rectangle, and a central square injection region 91 is arranged at the center of the rectangle; the length of the long side of the rectangle is 2a, the length of the short side of the rectangle is a, and the centers of the square injection regions 9 positioned at the four corners of the rectangle are penetrated by the transverse strip-shaped injection region 6 and the longitudinal strip-shaped injection region 7 which are arranged longitudinally; an annular injection region 10 is arranged outside the central square injection region 91, and the annular injection region 10 is a rectangle superposed with the center of the central square injection region 91; the region enclosed by the square injection region 9, the transverse strip injection region 6, the longitudinal strip injection region 7 arranged longitudinally and the outside of the annular injection region 10 is a first Schottky contact region 11, and the region between the inside of the annular injection region 10 and the outside of the central square injection region 91 is a second Schottky contact region 12.
Preferably, the side length of the square implantation region 9 is 4 μm; and/or the sides of the central square implant 91 are 4 μm.
Preferably, the pitch a between adjacent square implant regions 9 in the longitudinal direction is 6 μm.
Preferably, the stripe widths of the lateral stripe-shaped implantation regions 6 and the longitudinal stripe-shaped implantation regions 7 are 1 μm.
Preferably, each side of the annular implant region 10 has a width of 1 μm.
Preferably, the doping concentration of the square implantation region 9, the central square implantation region 91, the transverse strip implantation region 6, the longitudinal strip implantation region 7 and the annular implantation region 10 is 5E19cm-3The implantation depth was 0.6 μm.
Preferably, the material of the ohmic contact electrode 1 is a nickel alloy, and the material of the schottky contact electrode 4 is titanium.
Preferably, the doping concentration of the silicon carbide N-epitaxial layer 3 is 8.5E15cm-3～1.35E16cm-3And the thickness is 5-11 microns.
Preferably, the doping concentration of the silicon carbide N + substrate 2 is 1E20cm-3The thickness is 180-380 microns.
Compared with the prior art, the invention has the following beneficial effects:
(1) according to the invention, the concentration of current density in the P + ion injection region is slowed down through the unit arrangement of the ion injection region with optimized layout, so that the current is more uniformly distributed in the JBS unit cells.
(2) According to the invention, through optimizing the current distribution, the thermal power generated by the current is more uniformly dissipated in the cells, so that the temperature of the device during working is reduced.
(3) The invention reduces the temperature caused by current distribution optimization, reduces the thermal management limit of the device, improves the reliability of the device during operation and further prolongs the service life of the device.
Drawings
Fig. 1 is a plan view layout structure of embodiment 1 of the present invention;
fig. 2 is a plan view layout structure according to embodiment 2 of the present invention;
fig. 3 is a front view of a silicon carbide junction barrier schottky diode with optimized current distribution as provided in embodiments 1 and 2 of the present invention.
1 is ohmic contact electrode, 2 is carborundum N + substrate, 3 is carborundum N-epitaxial layer, 4 is schottky contact electrode, 5 is ion implantation district unit, 6 is horizontal bar injection zone, 7 is vertical bar injection zone, 8 is the schottky contact zone, 9 is square injection zone, 91 is central square injection zone, 10 is the annular injection zone, 11 is first schottky contact zone, 12 is the second schottky contact zone.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Example 1
As shown in fig. 3, the present embodiment provides a silicon carbide junction barrier schottky diode with optimized current distribution, which includes an ohmic contact electrode 1, a silicon carbide N + substrate 2, a silicon carbide N-epitaxial layer 3, a schottky contact electrode 4, and a plurality of ion implantation region units 5;
the ohmic contact electrode 1, the silicon carbide N + substrate 2 and the silicon carbide N-epitaxial layer 3 are sequentially stacked from bottom to top; a plurality of ion implantation area units 5 are periodically arranged on the upper layer in the silicon carbide N-epitaxial layer 3; the Schottky contact electrode 4 is positioned above the plurality of ion implantation region units 5;
as shown in fig. 1, each ion implantation area unit 5 includes: 4 square injection regions 9, wherein the 4 square injection regions 9 are positioned at four corners of the rectangle, and a central square injection region 91 is arranged at the center of the rectangle; the length of the long side of the rectangle is 2a, the length of the short side of the rectangle is a, the transverse strip-shaped injection region 6 transversely penetrates through the centers of each square injection region 9 and the central square injection region 91, and the longitudinal strip-shaped injection region 7 longitudinally penetrates through the centers of each square injection region 9 and the central square injection region 91. And the region defined by the square injection region 9, the central square injection region 91, the transverse strip injection region 6 and the longitudinal strip injection region 7 is a Schottky contact region 8.
Preferably, the side length of the square implantation region 9 is 4 μm; and/or the sides of the central square implant 91 are 4 μm.
Preferably, the longitudinal distance a between adjacent square implant regions 9 is 6 μm.
Preferably, the stripe widths of the lateral stripe-shaped implantation regions 6 and the longitudinal stripe-shaped implantation regions 7 are 1 μm.
Preferably, the doping concentration of the square implantation region 9, the central square implantation region 91, the transverse strip implantation region 6 and the longitudinal strip implantation region 7 is 5E19cm-3The implantation depth was 0.6 μm.
Preferably, the material of the ohmic contact electrode 1 is nickel alloy, and the material of the schottky contact electrode 4 is titanium.
Preferably, the doping concentration of the silicon carbide N-epitaxial layer 3 is 8.5E15cm-3～1.35E16cm-3And the thickness is 5-11 microns.
Preferably, the doping concentration of the silicon carbide N + substrate 2 is 1E20cm-3The thickness is 180-380 microns.
Specifically, in the present embodiment, a SiC junction barrier schottky diode with a forward rated current of 50A and a reverse breakdown voltage of 650V is used as a specific embodiment, the thickness of the silicon carbide N-epitaxial layer 3 is 6 μm, and the doping concentration is 1.35E16cm-3；
The width, length and size of all the ion implantation regions can be adjusted according to actual needs to balance forward performance and reverse performance of the device.
When the device is turned on in the forward direction, only the schottky contact region conducts current due to the inherent characteristics of the device, forming a current spreading region, i.e., the schottky contact region 8. The square Schottky contact region 8 is formed by enclosing the square injection region 9, the central square injection region 91, the transverse strip injection region 6 and the longitudinal strip injection region 7, current has four transverse diffusion directions, the problem that the current is concentrated around the ion injection region is solved, and the current is more uniformly distributed in the current diffusion region, so that the thermal power generated by current conduction is more dispersed, and the temperature of a device is reduced.
Example 2
As shown in fig. 3, the present embodiment provides a silicon carbide junction barrier schottky diode with optimized current distribution, which includes an ohmic contact electrode 1, a silicon carbide N + substrate 2, a silicon carbide N-epitaxial layer 3, a schottky contact electrode 4, and a plurality of ion implantation region units 5;
the ohmic contact electrode 1, the silicon carbide N + substrate 2 and the silicon carbide N-epitaxial layer 3 are sequentially stacked from bottom to top; a plurality of ion implantation area units 5 are periodically arranged on the upper layer in the silicon carbide N-epitaxial layer 3; the Schottky contact electrode 4 is positioned on the plurality of ion implantation regions 5;
as shown in fig. 2, each ion implantation area unit 5 includes: 4 square injection regions 9, wherein the 4 square injection regions 9 are positioned at four corners of the rectangle, and a central square injection region 91 is arranged at the center of the rectangle; the length of the long side of the rectangle is 2a, the length of the short side of the rectangle is a, and the centers of the square injection regions 9 positioned at the four corners of the rectangle are penetrated by the transverse strip-shaped injection region 6 and the longitudinal strip-shaped injection region 7 which are arranged longitudinally; an annular injection region 10 is arranged outside the central square injection region 91, and the annular injection region 10 is a rectangle superposed with the center of the central square injection region 91; the region enclosed by the square injection region 9, the transverse strip injection region 6, the longitudinal strip injection region 7 arranged longitudinally and the outside of the annular injection region 10 is a first Schottky contact region 11, and the region between the inside of the annular injection region 10 and the outside of the central square injection region 91 is a second Schottky contact region 12.
Preferably, each side of the annular implant region 10 has a width of 1 μm.
The doping concentration of the annular implantation region 10 is 5E19cm-3The implantation depth was 0.6 μm.
The width, length and size of all the ion implantation regions can be adjusted according to actual needs to balance forward performance and reverse performance of the device.
Similar to embodiment 1, the current has eight lateral diffusion directions in the first schottky contact region 11 and the second schottky contact region 12, which further alleviates the problem of current concentration around the ion implantation region, and achieves or even exceeds the optimization effect of embodiment 1. In addition, the tetragonal cells used in examples 1 and 2 also ensure excellent reverse performance of the device.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (10)
1. A silicon carbide junction barrier Schottky diode with optimized current distribution comprises an ohmic contact electrode (1), a silicon carbide N + substrate (2), a silicon carbide N-epitaxial layer (3), a Schottky contact electrode (4) and a plurality of ion implantation area units (5);
the ohmic contact electrode (1), the silicon carbide N + substrate (2) and the silicon carbide N-epitaxial layer (3) are sequentially stacked from bottom to top; a plurality of ion implantation area units (5) are periodically arranged on the upper layer in the silicon carbide N-epitaxial layer (3); the Schottky contact electrode (4) is positioned on the plurality of ion implantation area units (5);
the method is characterized in that: each ion implantation area unit (5) includes: 4 square injection regions (9), wherein the 4 square injection regions (9) are positioned at four corners of the rectangle, and a central square injection region (91) is arranged at the center of the rectangle; the length of the long side of the rectangle is 2a, the length of the short side of the rectangle is a, the transverse strip-shaped injection region (6) transversely penetrates through the centers of each square injection region (9) and the central square injection region (91), and the longitudinal strip-shaped injection region (7) longitudinally penetrates through the centers of each square injection region (9) and the central square injection region (91); and the region defined by the square injection region (9), the central square injection region (91), the transverse strip injection region (6) and the longitudinal strip injection region (7) is a Schottky contact region (8).
2. A silicon carbide junction barrier Schottky diode with optimized current distribution comprises an ohmic contact electrode (1), a silicon carbide N + substrate (2), a silicon carbide N-epitaxial layer (3), a Schottky contact electrode (4) and a plurality of ion implantation area units (5);
the ohmic contact electrode (1), the silicon carbide N + substrate (2) and the silicon carbide N-epitaxial layer (3) are sequentially stacked from bottom to top; a plurality of ion implantation area units (5) are periodically arranged on the upper layer in the silicon carbide N-epitaxial layer (3); the Schottky contact electrode (4) is positioned above the ion implantation regions (5);
the method is characterized in that: each ion implantation area unit (5) includes: 4 square injection regions (9), wherein the 4 square injection regions (9) are positioned at four corners of the rectangle, and a central square injection region (91) is arranged at the center of the rectangle; the length of the long side of the rectangle is 2a, the length of the short side of the rectangle is a, and the centers of the square injection regions (9) positioned at the four corners of the rectangle are penetrated by the transverse strip-shaped injection region (6) and the longitudinal strip-shaped injection region (7) which are longitudinally arranged; an annular injection region (10) is arranged outside the central square injection region (91), and the annular injection region (10) is a rectangle superposed with the center of the central square injection region (91); the region enclosed by the square injection region (9), the transverse strip injection region (6), the longitudinal strip injection region (7) arranged longitudinally and the outer part of the annular injection region (10) is a first Schottky contact region (11), and the region between the inner part of the annular injection region (10) and the outer part of the central square injection region (91) is a second Schottky contact region (12).
3. A current-profile optimized silicon carbide junction barrier schottky diode as in claim 1 or 2 wherein: the side length of the square injection region (9) is 4 mu m; and/or the side length of the central square implantation region (91) is 4 μm.
4. A current-profile optimized silicon carbide junction barrier schottky diode as in claim 1 or 2 wherein: the longitudinal distance a between adjacent square injection regions (9) is 6 mu m.
5. A current-profile optimized silicon carbide junction barrier schottky diode as in claim 1 or 2 wherein: the strip width of the transverse strip-shaped injection region (6) and the longitudinal strip-shaped injection region (7) is 1 mu m.
6. A current-profile optimized silicon carbide junction barrier schottky diode as in claim 1 or 2 wherein: the width of each side of the annular injection region (10) is 1 μm.
7. A current-profile optimized silicon carbide junction barrier schottky diode as in claim 1 or 2 wherein: the doping concentration of the square injection region (9), the central square injection region (91), the transverse strip injection region (6), the longitudinal strip injection region (7) and the annular injection region (10) is 5E19cm-3The implantation depth was 0.6 μm.
8. A current-profile optimized silicon carbide junction barrier schottky diode as in claim 1 or 2 wherein: the material of the ohmic contact electrode (1) is nickel alloy, and the material of the Schottky contact electrode (4) is titanium.
9. A current-profile optimized silicon carbide junction barrier schottky diode as in claim 1 or 2 wherein: the doping concentration of the silicon carbide N-epitaxial layer (3) is 8.5E15cm-3～1.35E16cm-3And the thickness is 5-11 microns.
10. A current-profile optimized silicon carbide junction barrier schottky diode as in claim 1 or 2 wherein: the doping concentration of the silicon carbide N + substrate (2) is 1E20cm-3The thickness is 180-380 microns.
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