CN104201212A - Floating junction silicon carbide SBD device with block-shaped groove and buried layer - Google Patents
Floating junction silicon carbide SBD device with block-shaped groove and buried layer Download PDFInfo
- Publication number
- CN104201212A CN104201212A CN201410166403.3A CN201410166403A CN104201212A CN 104201212 A CN104201212 A CN 104201212A CN 201410166403 A CN201410166403 A CN 201410166403A CN 104201212 A CN104201212 A CN 104201212A
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- groove
- floating junction
- buried regions
- ion implanted
- implanted region
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 58
- 238000007667 floating Methods 0.000 title claims abstract description 57
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 19
- 150000002500 ions Chemical class 0.000 abstract description 48
- 230000015556 catabolic process Effects 0.000 abstract description 6
- 238000002347 injection Methods 0.000 abstract 6
- 239000007924 injection Substances 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- -1 nitrogen ion Chemical class 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 206010020843 Hyperthermia Diseases 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000036031 hyperthermia Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
- H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
Abstract
The invention relates to a floating junction silicon carbide SBD device with a block-shaped groove and a buried layer. The floating junction silicon carbide SBD device is characterized by comprising a metal, a SiO2 spacer medium, a groove, a primary N- epitaxial layer, a P+ ion injection region, a secondary N- epitaxial layer, an N+ substrate region and an ohmic contact region, wherein the P+ ion injection region is located on the surface of the secondary N- epitaxial layer, the groove is flush with the P+ ion injection region up and down and the groove and the P+ ion injection region are shaped as the same; or a circular, hexagonal or square block-shaped buried layer is taken as a floating junction is flush with the P+ ion injection region up and down and shaped the same as the P+ ion injection region. The floating junction silicon carbide SBD device with the block-shaped groove and the buried layer has either the advantages of large Schottky contact area and large forward on current of a groove-shaped silicon carbide SBD or the advantage of high breakdown voltage of a floating junction silicon carbide SBD.
Description
Technical field
The present invention relates to microelectronics technology, relate in particular to a kind of floating junction carborundum SBD device with block groove and buried regions.
Background technology
There is in the past huge leap decades in semi-conducting material, semiconductor material with wide forbidden band is the third generation semi-conducting material taking the material such as carborundum, gallium nitride as representative, wherein especially famous with carbofrax material at this, carbofrax material is just starting to enter into people's research sight line twentieth century the 80s and 90s, and especially occurs development at full speed with the nearly more than ten years.It is ripe that carborundum technology is tending towards gradually, enters into the market, a lot of all industrialization of carborundum technology.Carbofrax material has better electric property than Si, and this makes it extremely be suitable for the fields such as high pressure, high-power and high frequency.And its developing steps have exceeded other wide bandgap semiconductors, there is application widely than other wide bandgap semiconductors.
SiC material energy gap is large, more than can reaching 3eV.More than critical breakdown electric field can reach 2MV/cm, than.SiC material thermal conductivity high (4.9W/cm.K left and right), and device is high temperature resistant, is more suitable in high-current device than Si.SiC carrier lifetime is short, only has several nanoseconds to hundreds of nanosecond.The radiation-resisting performance of SiC material is also very outstanding, and the electron-hole contrast Si material that radiation is introduced is wanted much less.Therefore, the good physical characteristic of SiC makes SiC device at Aero-Space electronics, the fields such as hyperthermia radiation adverse circumstances, military electronic wireless communication, radar, automotive electronics, high-power phase array thunder, radio frequency are widely used, and have extremely good application prospect at following new energy field.
Floating junction structure can improve the puncture voltage of the device under identical doping content nearly one times, and SiC floating junction device is manufactured successfully by people such as T Hatakeyama first in laboratory.In Schottky diode because its low pressure drop and large electric current are widely used in power device.In order to realize larger electric current, the nineties, just someone proposed the Schottky diode (TSBD) of SiC plough groove type.The Schottky diode of plough groove type has increased the area of Schottky contacts greatly, has realized lower pressure drop and larger electric current.
But floating junction silicon carbide schottky diode (SiC FJ-SBD), the buried regions of introducing in the epitaxial loayer of device, the narrowed conducting channel of forward conduction electric current, the forward conduction electric current of device diminishes, and conventional bar shaped buried regions makes the duty ratio of conducting channel at floating junction place not high.And the trench corner place of plough groove type SiC SBD has caused device to introduce peak value electric field under the effect of reverse voltage, reduce the puncture voltage of device.
In view of above-mentioned defect, creator of the present invention has obtained this creation finally through long research and practice.
Summary of the invention
The object of the present invention is to provide a kind of floating junction carborundum SBD device with block groove and buried regions, in order to overcome above-mentioned technological deficiency.
For achieving the above object, the invention provides a kind of floating junction carborundum SBD device with block groove and buried regions, it comprises metal, SiO
2spacer medium, groove, a N
-epitaxial loayer, P
+ion implanted region, secondary N
-epitaxial loayer, N
+substrate zone and ohmic contact regions,
Described P+ ion implanted region is in secondary N
-the surface of epitaxial loayer, groove and P
+ion implanted region consistency from top to bottom, shape is identical, or and P
+ion implanted region consistency from top to bottom, shape is identical, and floating junction adopts the block buried regions of circle, ellipse or six prismatics.
Further, described groove and P
+ion implanted region shape is identical, and area equates, and the groove block P of beneath trenches therewith
+the justified margin of ion implanted region.
Further, described groove and non-P
+ion implanted region shape is identical, and area equates, and the groove non-P of beneath trenches therewith
+the justified margin of ion implanted region.
Further, described P
+ion implanted region adopts circular or oval-shaped block buried regions, and circular or oval-shaped arrangement mode comprises circular or ellipse, the staggered circle of multirow or the ellipse that multirow is arranged in parallel.
Further, described P
+ion implanted region adopts the block buried regions of six prismatics, and the arrangement mode of six prismatics comprises six prismatics, multirow that multirow is arranged in parallel be staggered six prismatics and and six prismatics arranged of honeycomb.
Further, described P+ ion implanted region adopts square block buried regions, and it is square, non-conterminous staggered square and adjacent staggered square that square arrangement mode comprises that multirow is arranged in parallel.
Further, the degree of depth of described groove is 1～3 μ m.
Further, P
+the doping content of ion implanted region is 1x10
17cm
-3～1x10
19cm
-3, thickness is 0.4～0.6 μ m.
Further, described N
-epitaxial loayer is topmost 20 μ m to the thickness of bottom surface, and wherein doping content is 1x10
15cm
-3～1x10
16cm
-3, a N
-the thickness of epitaxial loayer is 5～15 μ m.
Further, described metal and SiO
2spacer medium is positioned at secondary N
-epitaxial loayer top; Metal and SiO
2spacer medium is adjacent.
Beneficial effect of the present invention is compared with prior art: the present invention has the floating junction carborundum SBD device of block groove and buried regions, the existing plough groove type carborundum of this device SBD Schottky contacts area is large, the advantage that forward conduction electric current is large, has again the large advantage of floating junction carborundum SBD puncture voltage.
Device provided by the invention has been introduced circle, six prismatics or square block buried regions, and with respect to traditional strip buried regions, conducting channel is wide, and forward conduction electric current is larger.
Device provided by the invention has short, the advantage such as capability of resistance to radiation is strong switching time, can be widely used in field of power electronics.
Brief description of the drawings
Fig. 1 a is the generalized section of the plough groove type floating junction carborundum SBD device of groove of the present invention and P+ ion implanted region consistency from top to bottom;
Fig. 1 b is the present invention while working as groove and P+ ion implanted region consistency from top to bottom, has the vertical view of the plough groove type floating junction carborundum SBD device of the block buried regions of circle that multirow is arranged in parallel;
Fig. 2 is the generalized section of the plough groove type floating junction carborundum SBD device of groove of the present invention and non-P+ ion implanted region consistency from top to bottom;
Fig. 3 is the present invention while working as groove and non-P+ ion implanted region consistency from top to bottom, has the vertical view of the plough groove type floating junction carborundum SBD device of the block buried regions of circle that multirow is arranged in parallel;
Fig. 4 is the present invention while working as groove and P+ ion implanted region consistency from top to bottom, has the vertical view of the plough groove type floating junction carborundum SBD device of the block buried regions of the staggered circle of multirow;
Fig. 5 is the present invention while working as groove and P+ ion implanted region consistency from top to bottom, has the vertical view of the plough groove type floating junction carborundum SBD device of the block buried regions of six prismatics that multirow is arranged in parallel;
Fig. 6 is the present invention while working as groove and non-P+ ion implanted region consistency from top to bottom, has the vertical view of the plough groove type floating junction carborundum SBD device of the block buried regions of six prismatics that multirow is arranged in parallel;
Fig. 7 is the present invention while working as groove and P+ ion implanted region consistency from top to bottom, has the be staggered vertical view of plough groove type floating junction carborundum SBD device of the block buried regions of six prismatics of multirow;
Fig. 8 is the present invention while working as groove and P+ ion implanted region consistency from top to bottom, has the vertical view of the plough groove type floating junction carborundum SBD device that is the block buried regions of six prismatics that six prismatics arrange.
Fig. 9 is the present invention while working as groove and P+ ion implanted region consistency from top to bottom, has the vertical view of the plough groove type floating junction carborundum SBD device of the square block buried regions that multirow is arranged in parallel;
Figure 10 is the present invention while working as groove and non-P+ ion implanted region consistency from top to bottom, has the vertical view of the plough groove type floating junction carborundum SBD device of the square block buried regions that multirow is arranged in parallel;
Figure 11 is the present invention while working as groove and P+ ion implanted region consistency from top to bottom, has the vertical view of the plough groove type floating junction carborundum SBD device of non-conterminous staggered square block buried regions;
Figure 12 is the present invention while working as groove and P+ ion implanted region consistency from top to bottom, has the vertical view of the plough groove type floating junction carborundum SBD device of adjacent staggered square block buried regions.
Embodiment
Below in conjunction with accompanying drawing, technical characterictic and the advantage with other above-mentioned to the present invention are described in more detail.
Refer to as shown in Figure 1a, the device architecture that floating junction carborundum SBD device of the present invention adopts comprises: metal 1, SiO
2spacer medium 2, groove 3, a N
-epitaxial loayer 4, P
+ion implanted region 5, secondary N
-epitaxial loayer 6, N
+substrate zone 7, ohmic contact regions 8.
Shown in Fig. 1 b, described N
+substrate 7 is N-type SiC substrate slices, a N
-epitaxial loayer 4 is positioned on N+ substrate 7, and thickness is 5～15 μ m, and wherein the doping content of nitrogen ion is that doping content is 1x10
15cm
-3～1x10
16cm
-3.
Described P
+ion implanted region 5 is positioned at N one time
-epitaxial loayer 4 surfaces, doping content is 1x10
17cm
-3～1x10
19cm-3, the Implantation degree of depth is 0.4～0.6 μ m, secondary N
-epitaxial loayer 6 is positioned at N one time
-epitaxial loayer 4 tops, thickness is that 5～15 μ m doping contents are 1x10
15cm
-3～1x10
16cm
-3.A N
-epitaxial loayer 4 and secondary N
-the gross thickness of epitaxial loayer 6 is 20 μ m.
Described metal 1 and SiO
2spacer medium 2 is positioned at secondary N
-epitaxial loayer 6 tops.Metal 1 and SiO
2spacer medium 2 is adjacent, and metal and and SiO
2spacer medium 2 part 12 that coincides.The degree of depth of groove 3 is 1～3 μ m, is positioned at metal 1 below, and described groove 3 and metal 1 arrange overlapping position 13, secondary N
-the surface of epitaxial loayer 6.
Refer to shown in Fig. 1 b, Fig. 3, Fig. 7, Fig. 8 groove 3 and P in Fig. 1 b and Fig. 7
+ion implanted region 5 shapes are identical, consistency from top to bottom.Groove 3 and P in Fig. 3 and Fig. 8
+stagger make groove 3 and non-P completely in ion implanted region 5
+ion implanted region 5 shapes are identical, consistency from top to bottom, on the puncture voltage of device without impact, and and the forward conduction electric current difference of device.
Refer to shown in Fig. 1 b, Fig. 5 and Fig. 7, the present invention has adopted circle, six prismatics or square block buried regions, circular, ellipse does not have corner, the angle of six prismatic corners is very large, and in actual process corner produce can be very round and smooth, these several shapes are in the time that duty ratio is identical, and forward conduction electric current is identical, but reverse breakdown voltage is different.
The arrangement mode of circular block buried regions can have Fig. 1 b and two kinds of different ways of Fig. 4, the circular circle being arranged in parallel for multirow in Fig. 1 b, and in Fig. 4, circle is staggered for multirow.In these two kinds of arrangement modes, the area of floating junction is constant, has only changed the arrangement mode of floating junction.The forward current size of device can not change, and reverse breakdown voltage is different.
The arrangement mode of the block buried regions of six prismatics can have Fig. 5, Fig. 7 and tri-kinds of different ways of Fig. 8, and in Fig. 5, six prismatics are that multirow is arranged in parallel, and in Fig. 7, six prismatics are that multirow is staggered; In these two kinds of arrangement modes, the area of floating junction is constant, has only changed the arrangement mode of floating junction, and the forward current size of device can not change, and reverse breakdown voltage is different; In Fig. 8, six prismatics are six prismatics arrangements, the area of the each six prismatic floating junctions in Fig. 8 in other two figure of the area of each six prismatic floating junctions is identical, floating junction is arranged and is become tightr, more even, and to carving cover deviation, to obtain susceptibility lower than overlapping deviation susceptibility the quarter in other two figure.
The arrangement mode of square block buried regions can have Fig. 9, Figure 11 and tri-kinds of different ways of Figure 12; Wherein, square for multirow is arranged in parallel in Fig. 9, Figure 11 is square is non-conterminous being staggered, and square in Figure 12 is adjacent being staggered; Wherein, in Fig. 9 and Figure 11, the area of floating junction is constant, has only changed the arrangement mode of floating junction; The forward current size of device can not change, and reverse breakdown voltage difference.And the area of the each floating junction in other two figure of the area of each floating junction is identical in Figure 12.Floating junction is arranged and is become tightr, and to carving cover deviation, to obtain susceptibility lower than the susceptibility in other two figure.
Embodiment mono-:
With reference to Fig. 1 a and Fig. 1 b, the structure of plough groove type floating junction carborundum SBD device in the present invention with circle or six prismatics and oval block buried regions is as follows:
N
+substrate is N-type SiC substrate slice, a N
-epitaxial loayer is positioned at N
+on substrate, P
+ion implanted region is positioned at N one time
-epi-layer surface, secondary N
-epitaxial loayer is positioned at N one time
-epitaxial loayer top.
Metal and SiO
2spacer medium is positioned at secondary N
-epitaxial loayer top, metal and SiO
2spacer medium is adjacent, and metal and and SiO
2the spacer medium part that coincides.Groove is positioned at metal below, secondary N
-the surface of epitaxial loayer.
A N
-the thickness of epitaxial loayer is 5 μ m, and wherein the doping content of nitrogen ion is that doping content is 1x10
16cm
-3.P
+the doping content of ion implanted region is 7x10
17cm
-3, the Implantation degree of depth is 0.6 μ m.Secondary N
-epitaxy layer thickness is that 15 μ m doping contents are 1x10
16cm
-3.
The degree of depth of groove is 1 μ m.
The groove of Schottky contact region and P
+ion implanted region shape is identical, consistency from top to bottom.P
+ion implanted region is the block buried regions of circle that multirow is arranged in parallel.
Embodiment bis-:
With reference to Fig. 1 a and Fig. 5, the structure of plough groove type floating junction carborundum SBD device in the present invention with circle or six prismatics and oval or block buried regions is as follows:
N
+substrate is N-type SiC substrate slice, a N
-epitaxial loayer is positioned at N
+on substrate, P
+ion implanted region is positioned at N one time
-epi-layer surface, secondary N
-epitaxial loayer is positioned at N one time
-epitaxial loayer top.
Metal and SiO
2spacer medium is positioned at secondary N
-epitaxial loayer top.Metal and SiO
2spacer medium is adjacent, and metal and and SiO
2the spacer medium part that coincides.Groove is positioned at metal below, secondary N
-the surface of epitaxial loayer.
A N
-the thickness of epitaxial loayer is 10 μ m, and wherein the doping content of nitrogen ion is that doping content is 5x10
15cm
-3.P
+the doping content of ion implanted region is 3x10
18cm
-3, the Implantation degree of depth is μ m O.5.Secondary N
-epitaxy layer thickness is 10 μ m, and doping content is 5x10
15cm
-3.
The degree of depth of groove is 2 μ m.
The groove of Schottky contact region and P
+ion implanted region shape is identical, consistency from top to bottom.P
+ion implanted region is the perpendicular not staggered square block buried regions of adjacent row.
Embodiment tri-:
With reference to Fig. 2 and Fig. 8, the structure of plough groove type floating junction carborundum SBD device in the present invention with circle or six prismatics and oval block buried regions is as follows:
N
+substrate is N-type SiC substrate slice, a N
-epitaxial loayer is positioned at N
+on substrate, P
+ion implanted region is positioned at N one time
-epi-layer surface, secondary N
-epitaxial loayer is positioned at N one time
-epitaxial loayer top.
Metal and SiO
2spacer medium is positioned at secondary N
-epitaxial loayer top.Metal and SiO
2spacer medium is adjacent, and metal and and SiO
2the spacer medium part that coincides.Groove is positioned at metal below, secondary N
-the surface of epitaxial loayer.
A N
-the thickness of epitaxial loayer is 5 μ m, and wherein the doping content of nitrogen ion is that doping content is 3x10
15cm
-3.P
+the doping content of ion implanted region is 1x10
19cm-3, the Implantation degree of depth is 0.4 μ m.Secondary N
-epitaxy layer thickness is that 15 μ m doping contents are 3x10
15cm
-3.
The degree of depth of groove is 3 μ m.
The groove of Schottky contact region and non-P
+ion implanted region shape is identical, consistency from top to bottom.P
+ion implanted region is the block buried regions of six prismatics that multirow is arranged in parallel.
The foregoing is only preferred embodiment of the present invention, is only illustrative for invention, and nonrestrictive.Those skilled in the art is understood, and in the spirit and scope that limit, can carry out many changes to it in invention claim, amendment, and even equivalence, but all will fall within the scope of protection of the present invention.
Claims (10)
1. a floating junction carborundum SBD device with block groove and buried regions, is characterized in that, it comprises metal, SiO
2spacer medium, groove, a N
-epitaxial loayer, P
+ion implanted region, secondary N
-epitaxial loayer, N
+substrate zone and ohmic contact regions,
Described P+ ion implanted region is in secondary N
-the surface of epitaxial loayer, groove and P
+ion implanted region consistency from top to bottom, shape is identical, or and P
+ion implanted region consistency from top to bottom, shape is identical, and floating junction adopts circle, six prismatics or square block buried regions.
2. the floating junction carborundum SBD device with block groove and buried regions according to claim 1, is characterized in that described groove and P
+ion implanted region shape is identical, and area equates, and the groove block P of beneath trenches therewith
+the justified margin of ion implanted region.
3. the floating junction carborundum SBD device with block groove and buried regions according to claim 1 and 2, is characterized in that described groove and non-P
+ion implanted region shape is identical, and area equates, and the groove non-P of beneath trenches therewith
+the justified margin of ion implanted region.
4. the floating junction carborundum SBD device with block groove and buried regions according to claim 3, is characterized in that described P
+ion implanted region adopts circular block buried regions, and the arrangement mode of circular shape comprises the staggered circle of circle, multirow that multirow is arranged in parallel.
5. the floating junction carborundum SBD device with block groove and buried regions according to claim 3, is characterized in that described P
+ion implanted region adopts the block buried regions of six prismatics, and the arrangement mode of six prismatics comprises six prismatics that are staggered six prismatics, multirow that multirow is arranged in parallel six prismatics and honeycomb arrange.
6. the floating junction carborundum SBD device with block groove and buried regions according to claim 3, is characterized in that described P
+ion implanted region adopts square block buried regions, and it is square, non-conterminous staggered square and adjacent staggered square that square arrangement mode comprises that multirow is arranged in parallel.
7. the floating junction carborundum SBD device with block groove and buried regions according to claim 3, is characterized in that, the degree of depth of described groove is 1～3 μ m.
8. the floating junction carborundum SBD device with block groove and buried regions according to claim 1 and 2, is characterized in that P
+the doping content of ion implanted region is 1x10
17cm
-3～1x10
19cm
-3, thickness is 0.4～0.6 μ m.
9. the floating junction carborundum SBD device with block groove and buried regions according to claim 7, is characterized in that described N
-epitaxial loayer is topmost 20 μ m to the thickness of bottom surface,
Wherein doping content is 1x10
15cm
-3～1x10
16cm
-3, a N
-the thickness of epitaxial loayer is 5～15 μ m.
10. the floating junction carborundum SBD device with block groove and buried regions according to claim 7, is characterized in that described metal and SiO
2spacer medium is positioned at secondary N
-epitaxial loayer top; Metal and SiO
2spacer medium is adjacent.
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