CN108520854A - A method of the glass and other materials placed using UV activation bonding superposing type - Google Patents
A method of the glass and other materials placed using UV activation bonding superposing type Download PDFInfo
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- CN108520854A CN108520854A CN201810380617.9A CN201810380617A CN108520854A CN 108520854 A CN108520854 A CN 108520854A CN 201810380617 A CN201810380617 A CN 201810380617A CN 108520854 A CN108520854 A CN 108520854A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
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- Condensed Matter Physics & Semiconductors (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Cleaning Or Drying Semiconductors (AREA)
- Joining Of Glass To Other Materials (AREA)
Abstract
The invention discloses a kind of methods for the glass and other materials placed using UV activation bonding superposing type, and steps are as follows for the method：Treat bonding material surface clean → place wedged plate → placement chip glass → activation chip to be bonded it is right → extraction wedge shape → manual pressure completes bonding.The method that the present invention activates the surface to be bonded of underlying materials by using ultraviolet light-transmissive chip glass, implement the in situ bonding in activation process, absorption of the contaminant particle in the hydrophilic surface on surface can be reduced, also the interference of human factor can be reduced to a certain extent, the bonding quality of glass and other materials can be effectively improved, the defects of bonding process is reduced.
Description
Technical field
The invention belongs to wafer bond techniques fields, are related to a kind of side that glass is bonded with other functional materials
Method, and in particular to a method of the glass and other functional materials placed using UV activation method bonding superposing type.
Background technology
Wafer bonding refers to the surface that Atomically clean is realized after crystal column surface is cleaned and activated, then by the two
Fitting, the process of the covalent linkage by room temperature or process annealing both to realize.Glass is a kind of good photopermeability
Material, almost in all wave bands, its light transmittance is all up even more than 90%.Further, since its coefficient of thermal expansion is smaller（0.56
× 10-6/K）, there is good thermal stability, be the substrate material of many photoelectric devices, microfluidic device and laser.In order to
Realize the performance of above-mentioned device, it usually needs to glass and other functional materials（Such as：Silicon, silicon carbide etc.）It is bonded.
Ultraviolet light is a kind of electromagnetic wave that wavelength is located at 100 ~ 400nm, and it is organic can to cut off crystal column surface because it is with higher energy
The covalent bond of object and matrix, to have the function that cleaning and activation.When being bonded to wafer using UV activation method, lead to
It is often placed in surface to be bonded is parallel below light source, bonding is completed in irradiation after a certain period of time.But permitted due to existing in air
More size micropollutants particles, the hydrophilic surface being easily adsorbed on after UV activation, to induce bonding defects
It generates.In addition, this method usually needs large-sized wafer bonding larger light source area so that the body of bonding apparatus
Product and cost can also correspondingly improve.It, usually can be due to artificial behaviour and during being bonded the surface of activation
Make that the surface of activation is caused to receive pollution, to generate the region not being bonded.
Invention content
It is above-mentioned low using activation efficiency existing for ultraviolet light bonding method in order to solve, it is vulnerable to human factor in bonding process
Interference the problems such as, the present invention provides it is a kind of using UV activation bonding superposing type place glass and other materials side
Method.This method can not only effectively improve the activation efficiency of ultraviolet light, reduce the volume and cost of device, and can be one
The interference for determining reduction human factor in degree, effectively improves the bonding quality of chip glass and other materials.
The purpose of the present invention is what is be achieved through the following technical solutions：
A method of the glass and other materials placed using UV activation bonding superposing type are realized high according to the following steps
The bonding of effect：The surface for treating bonding material carries out cleaning → placing wedged plate → placement chip glass → activation crystalline substance to be bonded
Piece is right → and extraction wedge shape → manual pressure completes bonding, and specific implementation step is as follows：
One, chip glass material and non-glass wafer material and several pieces of wedged plates to be bonded are cleaned, the tool
Body cleaning process is：Chip glass material and non-glass wafer material and several pieces of wedged plates to be bonded are placed in deionization
In water, it is cleaned by ultrasonic 5 ~ 15min at room temperature；The thickness of the chip glass material and non-glass wafer material to be bonded is
0.1~0.5mm；The thickness of the wedged plate is 0.1 ~ 1mm, and length and width is 5 ~ 15mm, and quantity should be according to sample to be bonded
Size and choose 2 ~ 4 pieces the crystal column surface for being fond of bonding is isolated；
Two, several pieces of wedged plates is taken to be uniformly placed in the edge on non-glass wafer material surface to be bonded；
Three, chip glass material to be bonded is placed in the top of wedged plate so that chip glass material surface to be bonded with
Another non-glass wafer material surface to be bonded is opposite；
Four, the chip to be bonded placed is opposite to immediately below ultraviolet source and is irradiated activation, the ultraviolet source
Wavelength be 100 ~ 400nm；Distance of the chip glass material upper surface to be bonded apart from ultraviolet source be 0.5 ~
2mm；The soak time can be according to the different controls of material to be bonded in 0.5 ~ 30min；
Five, after completing activation, wedged plate is pumped in situ so that surface to be bonded is bonded to each other；
Six, ultraviolet source is closed, the chip pair of surface fitting is taken out, applies pressure manually and completes bonding.
The bonding principle of the present invention is as follows：
Since chip glass has preferable permeability compared to other materials to ultraviolet light, ultraviolet light can be to parallel
The chip glass both sides of placement are carried out at the same time cleaning and activation.Ultraviolet light itself has high energy, when acting on material table
When face, the covalent bond in material surface organic pollution on the one hand can be interrupted, it is made to become CO2、H2The gases such as O and volatilize, from
And have the function that cleaning；On the other hand, ultraviolet light can interrupt the chemical bond on material matrix surface, its surface is made to be in high living
Character state hangs more-OH functional groups so that surface is more hydrophilic, to achieve the purpose that activation.When chip glass with
When another material laminate to be bonded is placed, the surface of glass can be activated due to ultraviolet light and waited for another through glass
The surface of bonding material interacts so that the surface of the two all generates more-OH functional groups.When pumping material table to be bonded
When wedged plate between face, surface to be bonded can pass through Si-OH+HO-Si → Si-O-Si+H2The dehydration of O is realized
It is covalently attached.
Compared with the prior art, the present invention has the following advantages：
（1）More crystal column surfaces can be activated under identical ultraviolet source area, improve the activation efficiency of ultraviolet light；
（2）By using ultraviolet light to the two-sided cleaning of chip glass and activation, improve the hydrophily on surface so that hydrophilic
Bonding is prone to；
（3）By using the method that ultraviolet light-transmissive chip glass activates the surface to be bonded of underlying materials, implement
In situ bonding in activation process can reduce absorption of the contaminant particle in the hydrophilic surface on surface, also can be in certain journey
The interference that human factor is reduced on degree, can effectively improve the bonding quality of glass and other materials, reduce in bonding process
Defect.
Description of the drawings
Fig. 1 is the bonding method process flow chart of the present invention；
Fig. 2 is the angle of wetting using the silicon and silicon carbide obtained before and after the vacuum ultraviolet photoactivation of 172nm in embodiment 1；
Fig. 3 is that the bonding image of obtained carbonization silicon/glass after the vacuum ultraviolet photoactivation of 172nm is utilized in embodiment 1；
Fig. 4 is that the bonding image of obtained silicon/glass after the vacuum ultraviolet photoactivation of 172nm is utilized in embodiment 2；
In figure：1 is wedged plate, and 2 be non-glass wafer material to be bonded, and 3 be ultraviolet source, and 4 be chip glass, and 5 be carbon
SiClx piece, 6 be water droplet.
Specific implementation mode
Technical scheme of the present invention is further described with reference to embodiment, however, it is not limited to this, every right
Technical solution of the present invention is modified or replaced equivalently, and without departing from the spirit of the technical scheme of the invention and range, should all be contained
It covers in protection scope of the present invention.
Embodiment 1：
A kind of method for the glass and other materials placed using UV activation method bonding superposing type is present embodiments provided, such as
Shown in Fig. 1, specific implementation step is as follows：
（1）Material to be bonded and wedged plate are cleaned：
It is 15mm by chip glass, silicon carbide wafer and two pieces of length that size is 10 × 10 × 0.5mm, width 5mm, thickness
Degree is that the wedged plate of 0.5mm is soaked in deionized water, carries out ultrasonic cleaning 10min, is dried up using nitrogen stream after taking-up.
（2）Place wedged plate：
The wedge shape of two pieces of above-mentioned sizes is taken to be placed on the edge of silicon carbide wafer.
（3）Place chip glass：
The chip glass for the side to be bonded cleaned is opposite with the silicon carbide wafer of side to be bonded, and it is positioned over wedged plate
Top.
（4）Activate chip pair to be bonded：
By the silicon carbide wafer and chip glass to be bonded placed at the 1mm distances that are positioned over immediately below ultraviolet source
（The upper surface of sheet glass is 1mm apart from light source distance）, wavelength is used to irradiate 15min for the vacuum-ultraviolet light of 172nm.From Fig. 2
In as can be seen that after vacuum-ultraviolet light irradiates, the angle of wetting on silicon and silicon carbide surface to be bonded is equal<2o becomes extremely hydrophilic,
Be conducive to the hydrophilic bonding of the two.
（5）Extract wedged plate out：
Ultraviolet source is not closed, extracts the wedged plate between silicon carbide wafer and chip glass out so that bonding surface is bonded to each other.
（6）Manual pressure completes bonding：
Ultraviolet source is closed, the chip pair of surface fitting is taken out, carbon is completed by the way of manual pressure to non-bond area
The bonding of SiClx chip and chip glass.As can be seen from Figure 3 bonding effect is ideal, almost without hole.
Embodiment 2：
Present embodiments provide a kind of method for the glass and other materials placed using UV activation method bonding superposing type, tool
Body implementation steps are as follows：
（1）Material to be bonded and wedged plate are cleaned：
By chip glass, silicon wafer and two pieces of length that size is 10 × 10 × 0.5mm be 15mm, width 5mm, thickness are
The wedged plate of 0.5mm is soaked in deionized water, carries out ultrasonic cleaning 10min, is dried up using nitrogen stream after taking-up.
（2）Place wedged plate：
The wedge shape of two pieces of above-mentioned sizes is taken to be placed on the edge of silicon wafer.
（3）Place chip glass：
The chip glass for the side to be bonded cleaned is opposite with the silicon wafer of side to be bonded, and be positioned on wedged plate
Side.
（4）Activate chip pair to be bonded：
By the silicon wafer and chip glass to be bonded placed at the 1mm distances that are positioned over immediately below ultraviolet source（Glass
The upper surface of glass piece is 1mm apart from light source distance）, wavelength is used to irradiate 15min for the vacuum-ultraviolet light of 172nm.
（5）Extract wedged plate out：
Ultraviolet source is not closed, extracts the wedged plate between silicon wafer and chip glass out so that obtains bonding surface and is bonded to each other；
（6）Manual pressure completes bonding：
Ultraviolet source is closed, the chip pair of surface fitting is taken out, silicon is completed by the way of manual pressure to non-bond area
The bonding of chip and chip glass.As can be seen from Figure 4 bonding effect is ideal, almost without hole.
Claims (8)
1. a kind of method for the glass and other materials placed using UV activation bonding superposing type, it is characterised in that the side
Method specific implementation step is as follows：
One, chip glass material and non-glass wafer material and several pieces of wedged plates to be bonded are cleaned；
Two, several pieces of wedged plates is taken to be uniformly placed in the edge on non-glass wafer material surface to be bonded；
Three, chip glass material to be bonded is placed in the top of wedged plate so that chip glass material surface to be bonded with
Another non-glass wafer material surface to be bonded is opposite；
Four, the chip to be bonded placed is opposite to immediately below ultraviolet source and is irradiated activation；
Five, after completing activation, wedged plate is pumped in situ so that surface to be bonded is bonded to each other；
Six, ultraviolet source is closed, the chip pair of surface fitting is taken out, applies pressure manually and completes bonding.
2. the method for the glass and other materials according to claim 1 placed using UV activation bonding superposing type,
It is characterized in that the cleaning process is：By chip glass material and non-glass wafer material and several pieces of wedge shapes to be bonded
Piece is placed in deionized water, is cleaned by ultrasonic 5 ~ 15min at room temperature.
3. the side of the glass and other materials according to claim 1 or 2 placed using UV activation bonding superposing type
Method, it is characterised in that the thickness of the chip glass material and non-glass wafer material to be bonded is 0.1 ~ 0.5mm.
4. the side of the glass and other materials according to claim 1 or 2 placed using UV activation bonding superposing type
Method, it is characterised in that the thickness of the wedged plate is 0.1 ~ 1mm, and length and width is 5 ~ 15mm.
5. the side of the glass and other materials according to claim 1 or 2 placed using UV activation bonding superposing type
Method, it is characterised in that the quantity of the wedged plate is 2 ~ 4 pieces.
6. the method for the glass and other materials according to claim 1 placed using UV activation bonding superposing type,
It is characterized in that the wavelength of the ultraviolet source is 100 ~ 400nm.
7. the method for the glass and other materials according to claim 1 placed using UV activation bonding superposing type,
It is characterized in that distance of the chip glass material upper surface to be bonded apart from ultraviolet source is 0.5 ~ 2mm.
8. the method for the glass and other materials according to claim 1 placed using UV activation bonding superposing type,
It is characterized in that the soak time can be according to the different controls of material to be bonded in 0.5 ~ 30min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810380617.9A CN108520854B (en) | 2018-04-25 | 2018-04-25 | Method for activating, bonding and stacking glass and other materials by utilizing ultraviolet light |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810380617.9A CN108520854B (en) | 2018-04-25 | 2018-04-25 | Method for activating, bonding and stacking glass and other materials by utilizing ultraviolet light |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108520854A true CN108520854A (en) | 2018-09-11 |
| CN108520854B CN108520854B (en) | 2020-03-31 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810380617.9A Active CN108520854B (en) | 2018-04-25 | 2018-04-25 | Method for activating, bonding and stacking glass and other materials by utilizing ultraviolet light |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109449172A (en) * | 2018-10-16 | 2019-03-08 | 德淮半导体有限公司 | Wafer bonding method |
| CN113105104A (en) * | 2020-01-13 | 2021-07-13 | 维达力实业(深圳)有限公司 | Glass welding method and composite glass product |
| CN114536934A (en) * | 2022-03-10 | 2022-05-27 | 云南大学 | Bonding equipment and bonding method |
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| CN102909474B (en) * | 2012-10-24 | 2015-05-13 | 天津大学 | Method for welding transparent material |
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| JP2017126416A (en) * | 2016-01-12 | 2017-07-20 | ウシオ電機株式会社 | Method for manufacturing light guide device |
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| JP2017177519A (en) * | 2016-03-30 | 2017-10-05 | 株式会社トプコン | Method for joining member and optical element produced by the method |
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| CN101553340A (en) * | 2006-09-22 | 2009-10-07 | 国立大学法人大阪大学 | Substance joining method, substance joining device, joined body, and its manufacturing method |
| CN102909474B (en) * | 2012-10-24 | 2015-05-13 | 天津大学 | Method for welding transparent material |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113105104A (en) * | 2020-01-13 | 2021-07-13 | 维达力实业(深圳)有限公司 | Glass welding method and composite glass product |
| CN114536934A (en) * | 2022-03-10 | 2022-05-27 | 云南大学 | Bonding equipment and bonding method |
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| Publication number | Publication date |
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| CN108520854B (en) | 2020-03-31 |
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