CN108515273B - Cutting device and cutting method for LED wafer - Google Patents
Cutting device and cutting method for LED wafer Download PDFInfo
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- CN108515273B CN108515273B CN201810271897.XA CN201810271897A CN108515273B CN 108515273 B CN108515273 B CN 108515273B CN 201810271897 A CN201810271897 A CN 201810271897A CN 108515273 B CN108515273 B CN 108515273B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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Abstract
The invention relates to a cutting device of an LED wafer, which comprises: a laser to emit a laser beam; the beam expanding element is arranged on a propagation light path of the laser beam and is used for collimating and expanding the laser beam; the diffraction optical element is used for splitting the collimated and expanded laser beam to obtain two sub-beams; the focusing mirror is used for focusing the two sub-beams to obtain two focusing light spots; the processing platform is used for placing the LED wafer to be cut and driving the LED wafer to move; the control system is used for controlling the laser to emit laser beams and controlling the motion state of the processing platform; the two sub-beams are focused inside the LED wafer through the focusing lens, and the processing platform drives the LED wafer to move so that the focused light spots form explosion points in the LED wafer. The diffraction optical element is adopted, two rows of mutually staggered explosion points are formed in the wafer cutting channel, the cross section of the cut core particles is an inclined plane, the light emitting area is increased, meanwhile, the diffraction optical element is also convenient for adjusting the position of light spots, and the processing precision is improved.
Description
Technical Field
The invention relates to the technical field of laser processing, in particular to a cutting device and a cutting method for an LED wafer.
Background
The LED wafer is generally made of sapphire as a substrate material, a light emitting area is prepared on the sapphire substrate through a chemical vapor deposition method, and then the LED wafer is cut into single small core particles. In the laser cutting method of the LED wafer, laser beams are incident from the surface of one side of sapphire of the wafer to form a focusing spot in a certain depth in the wafer, meanwhile, a carrying platform is moved to form a series of explosion points in a cutting channel of the wafer, and a substrate material at the explosion points is cracked under the action of stress, so that the aim of separating core grains by laser cutting is fulfilled.
With the increasing application of LEDs, the requirements of customers on the LED brightness are gradually increased, and the front-end process technologies in the LED industry, including epitaxy, photolithography, and film plating, are also continuously improved to increase the brightness of the LED chip. At present, a cutting mode of forming a laser explosion point in a wafer substrate is adopted to gradually replace a laser surface ablation cutting method so as to improve the luminous brightness of an LED, but with the continuous improvement of customer requirements, a better laser processing method needs to be developed so as to further improve the luminous brightness of an LED chip.
Disclosure of Invention
Based on the above, the invention provides a cutting device and a cutting method for an LED wafer, aiming at improving the luminous brightness of an LED chip made of core particles obtained after cutting through laser cutting.
An LED wafer cutting device comprises: a laser to emit a laser beam; the beam expanding element is arranged on a propagation light path of the laser beam emitted by the laser and is used for collimating and expanding the laser beam emitted by the laser; the diffraction optical element is used for splitting the collimated and expanded laser beam to obtain two sub-beams; the focusing mirror is used for focusing the two sub-beams to obtain two focusing light spots; the processing platform is used for placing an LED wafer to be cut and driving the LED wafer to move; the control system is used for controlling the laser to emit laser beams and controlling the motion state of the processing platform; the two sub-beams pass through the focusing lens to form two focusing light spots inside the LED wafer, and the processing platform drives the LED wafer to move so that the focusing light spots form a cutting track in the LED wafer.
According to the cutting device for the LED wafer, the precisely designed Diffractive Optical Element (DOE) is adopted to split the laser beam emitted by the laser to obtain two sub-beams, the special diffractive Optical Element is customized according to the processing requirement, and the transmission angle and the energy distribution of the two sub-beams can be adjusted, so that focusing light spots formed by the two sub-beams in the LED wafer through the focusing mirror are mutually staggered, the distance between the two focusing light spots can be accurately controlled, the cutting success rate of the LED wafer is improved, and meanwhile, the core particles are effectively prevented from being damaged due to the deviation of the positions of the focusing light spots; in addition, the diffractive optical element can be customized according to the processing requirement, and the application range of the cutting device of the LED wafer is expanded.
In one embodiment, the cutting device further comprises a mirror for changing the propagation direction of the sub-beams emitted by the diffractive optical element so that the sub-beams enter the focusing mirror.
In one embodiment, the laser is a narrow pulse width picosecond laser or a femtosecond laser.
In one embodiment, the laser beam has a wavelength of 1064 nm.
In one embodiment, the two sub-beams have equal energy and the polarization directions are the same.
A method for cutting an LED wafer comprises the following steps:
s1: laser beams emitted by a laser enter a diffraction optical element after being expanded and collimated, and a first sub-beam and a second sub-beam are obtained after beam splitting;
s2: the first sub-beam and the second sub-beam pass through a focusing lens to form a first focusing light spot and a second focusing light spot in the LED wafer;
s3: the processing platform drives the LED wafer to move along the X direction, a first row of explosion points and a second row of explosion points are respectively formed in each X-direction cutting channel of the LED wafer in sequence, the distance between the first row of explosion points and the second row of explosion points along the Y-axis direction is larger than zero, and the distance along the Z-axis direction is larger than zero;
s4: the processing platform drives the LED wafer to move along the Y direction, a third row of explosion points and a fourth row of explosion points are respectively formed in each Y-direction cutting channel of the LED wafer in sequence, the distance between the third row of explosion points and the fourth row of explosion points along the X-axis direction is larger than zero, and the distance along the Z-axis direction is larger than zero;
s5: the LED wafer is cleaved to form a plurality of individual core particles.
In one embodiment, the first row of the explosive points and the second row of the explosive points which are positioned in the same X-direction cutting path have a distance range of 10-30 μm along the Y direction and a distance range of 10-80 μm along the Z direction.
In one embodiment, the pitch of the third row of the frying points and the fourth row of the frying points in the same cutting path in the Y direction is 10-30 μm along the X direction, and the pitch of the third row of the frying points and the fourth row of the frying points along the Z direction is 10-80 μm.
In one embodiment, the core particle has a parallelogram or trapezoid cross-section.
In one embodiment, the distance between the projection of the first row of explosion points and the projection of the second row of explosion points on the surface of the LED wafer, which are positioned in the same X-direction cutting channel, and the central line of the X-direction cutting channel is not more than 20 μm; and the distance between the projection of the third row of explosion points and the fourth row of explosion points positioned in the same Y-direction cutting channel on the surface of the LED wafer and the central line of the Y-direction cutting channel is not more than 20 mu m.
Drawings
FIG. 1 is a schematic diagram illustrating an exemplary embodiment of an apparatus for cutting an LED wafer;
FIG. 2 is a schematic diagram of an embodiment of an LED wafer before being diced;
FIG. 3 is a schematic cross-sectional view of the LED wafer shown in FIG. 2;
FIG. 4 is a schematic diagram of the cutting apparatus shown in FIG. 1 after cutting the LED wafer;
FIG. 5 is a schematic cross-sectional view of an LED wafer after being cut in an embodiment;
fig. 6 is a schematic view showing a structure of a core pellet cut by the cutting apparatus shown in fig. 1.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the detailed description and specific examples, while indicating the scope of the invention, are intended for purposes of illustration only and are not intended to limit the scope of the invention.
Referring to fig. 1, an apparatus 100 for cutting an LED wafer includes a laser 10, a beam expander 20, a diffractive optical element 30, a reflector 40, a focusing mirror 50, a processing platform 60, and a control system 70. The laser 10, the beam expanding element 20, the diffractive optical element 30, the reflecting mirror 40, the focusing mirror 50 and the processing platform 60 are sequentially arranged, and the laser 10 and the processing platform 60 are respectively in communication connection with the control system 70.
The cutting device 100 for the LED wafer adopts the precisely designed diffractive Optical Element 30 (DOE) to split the laser beam emitted by the laser 10 to obtain two sub-beams, and the special diffractive Optical Element 30 is customized according to the processing requirement, so that the transmission angles and the energy distribution of the two sub-beams can be adjusted, so that the focused light spots formed by the two sub-beams passing through the focusing lens 50 in the LED wafer 200 are mutually staggered, the distance between the two focused light spots can be precisely controlled, the cutting success rate of the LED wafer is improved, and meanwhile, the damage to the core particles caused by the deviation of the positions of the focused light spots is effectively prevented; in addition, the diffractive optical element 30 can be customized according to the processing requirements, and the application range of the cutting device 100 for the LED wafer is expanded.
The working process of the cutting device 100 for the LED wafer of the invention is as follows: placing the LED wafer 200 to be cut on the processing platform 60; the control system 70 controls the laser 10 to be turned on, and the laser beam emitted by the laser 10 enters the beam expanding element 20; the beam expanding element 20 collimates and expands the laser beam so as to obtain smaller focused light spots in the subsequent processing process; the diffractive optical element 30 splits the collimated and expanded laser beam to obtain two sub-beams; a mirror 40 for changing the propagation direction of the two sub-beams emitted from the diffractive optical element 30 so that the two sub-beams enter the focusing mirror 50; the focusing lens 50 focuses the two sub-beams to form two focused light spots inside the LED wafer 200; control system 70 controls processing stage 60 to move LED wafer 200 such that the focused light spot forms a cutting track within LED wafer 200.
Specifically, the beam expanding element 20 may be a beam expander, such as a fixed beam expander, an adjustable beam expander, etc., for adjusting the spot size of the laser beam.
The laser 10 is a narrow pulse width picosecond laser 10 or a femtosecond laser 10, and the reduction of the pulse width can effectively improve the single pulse energy of a focusing light spot, so that the material is fully acted, and a better cutting effect is achieved.
The wavelength of the laser beam is 1064nm, and the sapphire substrate adopted by the LED wafer has high absorption rate to the laser with the wavelength of 1064nm, so that the cutting time is shortened, and the cutting efficiency is improved.
The two sub-beams obtained by splitting the beams by the diffractive optical element 30 have equal energy and same polarization direction, so that two rows of explosion points formed in the same X-direction cutting channel (or Y-direction cutting channel) in the same time are the same, the processing effect is consistent, and the separation efficiency of the core particles is improved.
A method for cutting an LED wafer comprises the following steps:
s1: laser beams emitted by the laser 10 enter the diffractive optical element 30 after being expanded and collimated, and a first sub-beam and a second sub-beam are obtained after beam splitting;
s2: the first sub-beam and the second sub-beam pass through the focusing lens 50 to form a first focusing light spot and a second focusing light spot in the LED wafer;
s3: the processing platform 60 drives the LED wafer to move along the X direction, and a first row of explosion points and a second row of explosion points are respectively formed in each X-direction cutting channel of the LED wafer in sequence, wherein the distance between the first row of explosion points and the second row of explosion points along the Y-axis direction is greater than zero, and the distance along the Z-axis direction is greater than zero;
s4: the processing platform 60 drives the LED wafer to move along the Y direction, and a third row of explosion points and a fourth row of explosion points are respectively formed in each Y-direction cutting track of the LED wafer in sequence, where the distance between the third row of explosion points and the fourth row of explosion points along the X-axis direction is greater than zero, and the distance along the Z-axis direction is greater than zero;
s5: the LED wafer cracks to form a plurality of individual core particles.
According to the method for cutting the LED wafer, the laser beam is split by the diffractive optical element 30 to obtain two sub-beams, the two sub-beams are focused inside the LED wafer by the focusing lens 50 to form two focusing light spots, when the processing platform drives the LED wafer to move, a first row of explosion points and a second row of explosion points are formed in each X-direction cutting channel of the two focusing light spots, the two rows of explosion points are staggered in the Y direction and the Z direction, a third row of explosion points and a fourth row of explosion points are also formed in each Y-direction cutting channel, and the two rows of explosion points are staggered in the X direction and the Z direction.
Meanwhile, due to the adoption of the diffractive optical element 30, the transmission angle and the energy distribution of the two sub-beams can be accurately adjusted, so that the positions of the two focusing light spots can be accurately adjusted, the cutting precision can be effectively improved during cutting, the core grains can be prevented from being damaged by the position offset of the focusing light spots, and the cutting yield is improved.
Specifically, referring to fig. 2, the LED wafer 200 includes a sapphire substrate 210 and core grains 220 attached to the sapphire substrate 210, wherein each core grain 220 is separated by an X-direction scribe line 230 and a Y-direction scribe line 240. Referring to fig. 3, the core particle 220 includes a light emitting layer 221, a positive electrode 222, and a negative electrode 223.
Referring to FIG. 4, the distance L between the first row of the explosive dots and the second row of the explosive dots in the same X-direction cutting path along the Y direction is 10-30 μm, and the distance H along the Z direction is 10-80 μm. The distance L between the first row of explosion points and the second row of explosion points in the same X-direction cutting channel along the Y direction is more than 10 micrometers, and the distance h along the Z direction is more than 10 micrometers, so that the section formed by breaking the cutting channel of the sapphire substrate 210 along the X direction has a larger area, and the light-emitting area of the core particle 220 is increased; and the distance L between the first row of explosive dots and the second row of explosive dots in the same X-direction cutting path along the Y direction is less than 30 μm, and the distance h along the Z direction is less than 80 μm, so that the sapphire substrate 210 is prevented from being easily broken due to overlarge distance between the first row of explosive dots and the second row of explosive dots, and the segmentation efficiency of the core particles 220 is prevented from being influenced.
In one embodiment, the first row of fire spots and the second row of fire spots in the same X-direction scribe line have a distance L of 20 μm along the Y-direction.
The distance range of the third row of the frying points and the fourth row of the frying points in the cutting path in the same Y direction along the X direction is 10-30 mu m, and the distance range along the Z direction is 10-80 mu m. The distance between the third row of explosive dots and the fourth row of explosive dots in the cutting channel in the same Y direction is more than 10 micrometers, and the distance along the X direction is more than 10 micrometers, so that the section formed by breaking the cutting channel along the Y direction of the core particle has a larger area, and the light-emitting area of the core particle is increased; and the distance between the third row of the frying points and the fourth row of the frying points in the same cutting path in the Y direction along the X direction is less than 30 mu m, and the distance between the third row of the frying points and the fourth row of the frying points along the Z direction is less than 80 mu m, so that the situation that the core particles are not easy to separate due to overlarge distance between the third row of the frying points and the fourth row of the frying points is avoided.
In one embodiment, the third row of frying points and the fourth row of frying points in the same Y-direction cutting path have a spacing of 20 μm along the X-direction.
Referring to fig. 5, the cross section of the core particle 220 is a parallelogram or trapezoid, and when the offset directions of the adjacent cutting lanes (the X-direction cutting lane 230 or the Y-direction cutting lane 240) are the same, the cross section of the obtained core particle 220 is a parallelogram; when the offset directions of the adjacent cutting lanes are not uniform, the obtained core particle 220 has a trapezoidal cross section.
The distance between the projection of the first row of explosion points and the projection of the second row of explosion points on the surface of the LED wafer in the same X-direction cutting way and the central line of the X-direction cutting way is not more than 20 mu m; the distance between the projection of the third row of explosion points and the fourth row of explosion points in the same Y-direction cutting channel on the surface of the LED wafer and the central line of the Y-direction cutting channel is not more than 20 mu m, so that the damage to the surface of the core particle caused by the fact that a focused light spot irradiates on the core particle is avoided.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (8)
1. A method for cutting an LED wafer is characterized by comprising the following steps:
s1: laser beams emitted by a laser enter a diffraction optical element after being expanded and collimated, and a first sub-beam and a second sub-beam are obtained after beam splitting;
s2: the first sub-beam and the second sub-beam pass through a focusing lens to form a first focusing light spot and a second focusing light spot in the LED wafer;
s3: the processing platform drives the LED wafer to move along the X direction, a first row of explosion points and a second row of explosion points are respectively formed in each X-direction cutting channel of the LED wafer in sequence, the distance between the first row of explosion points and the second row of explosion points along the Y-axis direction is larger than zero, and the distance along the Z-axis direction is larger than zero;
s4: the processing platform drives the LED wafer to move along the Y direction, a third row of explosion points and a fourth row of explosion points are respectively formed in each Y-direction cutting channel of the LED wafer in sequence, the distance between the third row of explosion points and the fourth row of explosion points along the X-axis direction is larger than zero, and the distance along the Z-axis direction is larger than zero;
s5: the LED wafer is cleaved to form a plurality of individual core particles.
2. The method for cutting the LED wafer as claimed in claim 1, wherein the first row of the explosion points and the second row of the explosion points in the same X-direction cutting path have a distance range of 10-30 μm along the Y-direction and a distance range of 10-80 μm along the Z-direction.
3. The method for cutting the LED wafer as claimed in claim 1, wherein the pitch of the third row of the burst points and the fourth row of the burst points in the same Y-direction cutting channel along the X-direction is 10-30 μm, and the pitch along the Z-direction is 10-80 μm.
4. The method for cutting the LED wafer as claimed in claim 1, wherein the cross section of the core particles is parallelogram or trapezoid.
5. The method for cutting the LED wafer as claimed in claim 1, wherein the distance between the projection of the first row of the explosion points and the projection of the second row of the explosion points on the surface of the LED wafer, which are located in the same X-direction cutting line, and the center line of the X-direction cutting line is not more than 20 μm; and the distance between the projection of the third row of explosion points and the fourth row of explosion points positioned in the same Y-direction cutting channel on the surface of the LED wafer and the central line of the Y-direction cutting channel is not more than 20 mu m.
6. The method for cutting LED wafers as claimed in claim 1, wherein the laser is a narrow pulse width picosecond laser or a femtosecond laser.
7. The method for cutting the LED wafer as set forth in claim 1, wherein the wavelength of the laser beam is 1064 nm.
8. The method as claimed in claim 1, wherein the first sub-beam and the second sub-beam have the same energy and the same polarization direction.
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| CN109175728B (en) * | 2018-09-30 | 2021-02-23 | 大族激光科技产业集团股份有限公司 | Device and method for laser cutting of low-temperature co-fired ceramic |
| JP7108517B2 (en) * | 2018-10-30 | 2022-07-28 | 浜松ホトニクス株式会社 | Laser processing equipment |
| JP7096841B2 (en) * | 2019-01-30 | 2022-07-06 | ハンズ レーザー テクノロジー インダストリー グループ カンパニー リミテッド | Laser cutting heads and laser cutting equipment for cutting hard and brittle material products |
| WO2020210959A1 (en) * | 2019-04-15 | 2020-10-22 | 厦门市三安光电科技有限公司 | Led chiplet and invisible cutting method for led chip |
| CN110026678A (en) * | 2019-04-30 | 2019-07-19 | 深圳信息职业技术学院 | A kind of ultrafast laser multi-beam parallel processing unit (plant) and method |
| CN110082376B (en) * | 2019-05-20 | 2024-01-30 | 中国人民大学 | Double-row monocrystalline neutron analyzer unit |
| CN110405361A (en) * | 2019-08-05 | 2019-11-05 | 深圳泰研半导体装备有限公司 | A kind of wafer laser grooving apparatus and its working method |
| CN112234029B (en) * | 2020-09-14 | 2023-06-02 | 佛山市国星半导体技术有限公司 | Cutting method of mini LED chip |
| WO2022205082A1 (en) * | 2021-03-31 | 2022-10-06 | Yangtze Memory Technologies Co., Ltd. | Laser system for dicing semiconductor structure and operation method thereof |
| CN114012249A (en) * | 2021-10-19 | 2022-02-08 | 江苏大学 | Device for longitudinally and invisibly cutting brittle material by multifocal laser and processing method |
| CN114346478A (en) * | 2022-02-17 | 2022-04-15 | 苏州科韵激光科技有限公司 | Method, system and equipment for cutting LED wafer |
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| CN201516540U (en) * | 2009-09-16 | 2010-06-30 | 苏州德龙激光有限公司 | Novel LED wafer three-beam laser scribing apparatus |
| CN105171235B (en) * | 2014-06-23 | 2018-06-01 | 大族激光科技产业集团股份有限公司 | A kind of double focus laser micromachining device and its processing method |
| CN104174994B (en) * | 2014-07-31 | 2016-06-01 | 北京万恒镭特机电设备有限公司 | light-dividing device and method thereof |
| CN205764450U (en) * | 2016-05-27 | 2016-12-07 | 扬州乾照光电有限公司 | A kind of LED wafer laser aid |
| CN106216856B (en) * | 2016-08-22 | 2019-04-16 | 大族激光科技产业集团股份有限公司 | Double focus laser system of processing and its processing method |
| CN106410573A (en) * | 2016-11-02 | 2017-02-15 | 国神光电科技（上海）有限公司 | Laser |
| CN107252982B (en) * | 2017-07-14 | 2019-03-15 | 中国科学院微电子研究所 | A kind of method and device laser machining wafer |
| CN107214420B (en) * | 2017-07-14 | 2018-11-09 | 中国科学院微电子研究所 | A kind of method and device of laser processing wafer |
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