CN110405361A - A kind of wafer laser grooving apparatus and its working method - Google Patents
A kind of wafer laser grooving apparatus and its working method Download PDFInfo
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- CN110405361A CN110405361A CN201910718488.4A CN201910718488A CN110405361A CN 110405361 A CN110405361 A CN 110405361A CN 201910718488 A CN201910718488 A CN 201910718488A CN 110405361 A CN110405361 A CN 110405361A
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- 238000000034 method Methods 0.000 title claims abstract description 19
- 238000006073 displacement reaction Methods 0.000 claims abstract description 25
- 230000008859 change Effects 0.000 claims abstract description 12
- 230000010287 polarization Effects 0.000 claims description 8
- 230000004313 glare Effects 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 description 13
- 230000000694 effects Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 206010037660 Pyrexia Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
- B23K26/0673—Dividing the beam into multiple beams, e.g. multifocusing into independently operating sub-beams, e.g. beam multiplexing to provide laser beams for several stations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
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- Laser Beam Processing (AREA)
Abstract
A kind of wafer laser grooving apparatus and its working method, the device includes laser, first diaphragm, beam-expanding collimation mirror, second diaphragm, reflecting mirror, diffraction spectroscope, electronic rotation displacement platform, focus lamp and motion platform, laser launches laser beam, laser beam successively passes through the first diaphragm, beam-expanding collimation mirror, second diaphragm, reflecting mirror and diffraction spectroscope, diffraction spectroscope exports the identical laser beam of two bundle natures, using focus lamp, two beam laser beam focus form two focal beam spots in placing on wafer to be processed on the moving platform, the rotation angle of diffraction spectroscope is controlled by rotary electric swing offset platform, change the angle of two focal beam spots and Cutting Road direction, and then two focal beam spots are controlled in the distance in vertical Cutting Road direction, the spacing of i.e. changeable Cutting Road.
Description
Technical field
The present invention relates to technical field of laser processing more particularly to a kind of wafer laser grooving apparatus and its working methods.
Background technique
In manufacture of semiconductor, by reducing the dielectric constant of dielectric material used in integrated circuit, collection can be reduced
At the leakage current of circuit, the capacity effect between conducting wire is reduced, reduces integrated circuit fever etc., such material is referred to as
Low-K material.Using traditional diamond break bar processing material containing Low-K wafer when, it may appear that the splashing of Low-K material and
Bad order, to influence subsequent process.In order to solve this problem, it needs first to remove the Low-K layer of crystal column surface, then makes
It is processed with diamond break bar.
Prior art discloses a kind of laser processing device of Low-k material and method (application number:
201610326961.0), which launches laser beam using laser, successively divides after half-wave plate and the first polarizing film
At light beam A and light beam B；Light beam A is successively passed through after the one 45 degree of reflecting mirror, the first optical gate and the 2nd 45 degree of reflecting mirror, is passed through
Second optical gate is simultaneously selectively entered beam shaping, after sequentially entering the second polarizing film and the 3rd 45 degree of reflecting mirror later, most
It is focused on machined material after entering focus lamp afterwards；Light beam B is successively after third optical gate, prism, the second polarizing film and
After 45 degree of reflecting mirrors, also focused on machined material after finally entering focus lamp.Low-k is cut along Cutting Road using laser
Layer guarantees that laser does not influence silicon substrate while Cutting Road forms a groove, removes Low-k material, and processing effect is good,
The problems such as groove after processing is uniform, without obvious chipping, ripple glaze.
The Low-K removing method of mainstream is that laser is focused on to the Low-K of crystal column surface using laser slotting technology at present
On material, fusing or gasification Low-K material are final to remove on Cutting Road Low-K layers, but in the above-mentioned technical solutions, light beam
Spacing regulative mode is complicated, and cannot continuously adjust spacing, and grooving processes process not enough simplifies.
Summary of the invention
Shortcoming present in view of the above technology, the present invention provide a kind of wafer laser grooving apparatus and its work side
Laser beam is divided into two bundles the laser with consistent energy, hot spot form, polarization state using diffraction spectroscope by method, the device
Two beam laser are focused on formation Cutting Road focal beam spot on machined material by focus lamp by beam；And diffraction spectroscope is peace
On electronic rotation displacement platform, the rotation angle of diffraction spectroscope can be adjusted by electronic rotation displacement platform, changes two
Distance between focal beam spot, and then the spacing of Cutting Road is continuously adjusted, mode of operation is simple and convenient.
To achieve the above object, the present invention is implemented as follows:
A kind of wafer laser grooving apparatus, it is characterised in that it includes laser, the first diaphragm, beam-expanding collimation mirror, second
Diaphragm, reflecting mirror, diffraction spectroscope, electronic rotation displacement platform, focus lamp and motion platform, the laser, expand the first diaphragm
Beam collimating mirror, the second diaphragm and reflecting mirror are coaxially disposed in the horizontal direction, and the diffraction spectroscope, gathers electronic rotation displacement platform
The lower section of reflecting mirror is from top to bottom sequentially coaxially arranged in burnt mirror and motion platform, and the diffraction spectroscope is mounted on electronic rotation
In indexable moving stage, wafer to be processed is placed on motion platform；
Laser launches laser beam, and laser beam successively passes through the first diaphragm, beam-expanding collimation mirror, the second diaphragm, reflecting mirror
And diffraction spectroscope, diffraction spectroscope export the identical laser beam of two bundle natures, using focus lamp, two beam laser beam focus in
It places and forms two focal beam spots on wafer to be processed on the moving platform, diffraction is controlled by rotary electric swing offset platform
Spectroscopical rotation angle changes the angle of two focal beam spots and Cutting Road direction, and then controls two focal beam spots along vertical
The distance in straight Cutting Road direction, i.e., the spacing of changeable Cutting Road.
The present apparatus is not to be directly changed the spacing of two focal beam spots, but change indirectly by rotating diffraction spectroscope
For two focal beam spots along the distance in vertical Cutting Road direction, mode of operation is simple and convenient；And two focal beam spots of the present apparatus
Center remains unchanged, and by the rotation angle of adjusting electronic rotation displacement platform, the rotation angle of diffraction spectroscope is adjusted,
The angle for changing two focal beam spots and Cutting Road direction, changes two focal beam spots along the distance in vertical Cutting Road direction,
Achieve the effect that change Cutting Road spacing, this mode changes Cutting Road spacing, and faster, effect is more stable for speed, and can
Product with consecutive variations, suitable for various width.
Further, the diffraction spectroscope center is overlapped with the rotation center of electronic rotation displacement platform.
Further, the reflecting mirror is 45 ° of total reflection mirrors.
A kind of working method of wafer laser grooving apparatus, it is characterised in that itself the following steps are included:
S1: wafer to be processed is placed on the moving platform, electronic rotation displacement platform is rotated to initial position；
S2: laser launches laser beam, after the veiling glare that the first diaphragm filters out edge enters beam-expanding collimation mirror, swashs
Light beam filters out edge veiling glare after reflecting mirror reflects by the second diaphragm, is incident in diffraction spectroscope and is beamed into two beams and has
The laser beam of consistent energy, hot spot form, polarization state, using focus lamp, two beam laser beam focus are flat in being placed on movement
Two focal beam spots are formed on wafer to be processed on platform；
S3: by rotary electric swing offset platform control diffraction spectroscope rotation angle, change two focal beam spots with
The angle in Cutting Road direction, and then two focal beam spots are controlled along the distance in vertical Cutting Road direction, it is cut required for being adapted to
Road spacing；
S4: motion platform is moved along a straight line, and focal beam spot forms the parallel Cutting Road of twice on wafer to be processed；
S5: repeating step S3, S4, until the Cutting Road on wafer to be processed uniformly fills the slot for foring required width.
Further, distance of described two focal beam spots on wafer to be processed is Dmax, and described two focal beam spots exist
Distance on wafer to be processed along vertical Cutting Road direction is D, and two focal beam spots and the angle in Cutting Road direction are θ, rotation
Diffraction spectroscope changes the angle of two focal beam spots and Cutting Road direction, so that two focal beam spots are along vertical Cutting Road side
To the available control of distance D, variation range is 0~Dmax, and can consecutive variations.
Further, when electronic rotation displacement platform is rotated to initial position, two focal beam spots are on wafer to be processed at this time
Cutting Road direction distance it is maximum, i.e., Cutting Road spacing is maximum, when rotating diffraction spectroscope, changes two focal beam spots and cuts
The angle in direction is cut, distance of two focal beam spots along vertical Cutting Road direction becomes smaller.
Further, it is 50um that the spacing of two focal beam spots, which is Dmax, and the scribing line cutting width of single focal beam spot is
10um。
It is an advantage of the present invention that laser beam is divided into two bundles with consistent energy by the device using diffraction spectroscope
Two beam laser are focused on formation Cutting Road on machined material by focus lamp and gathered by the laser beam of amount, hot spot form, polarization state
Burnt hot spot；And diffraction spectroscope is mounted on electronic rotation displacement platform, can adjust diffraction point by electronic rotation displacement platform
The rotation angle of light microscopic, changes the angle of two focal beam spots and Cutting Road direction, changes two focal beam spots along vertical cutting
The distance in road direction, and then the spacing of Cutting Road is continuously adjusted, mode of operation is simple and convenient.And the present apparatus utilizes diffraction spectroscope
Laser beam is divided into two bundles the laser beam with consistent energy, hot spot form, polarization state, process velocity is compared to existing skill
Art is promoted at double.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of wafer laser grooving apparatus in the specific embodiment of the invention.
Fig. 2 is to focus on to be formed on wafer to be processed by two beam laser by focus lamp in the specific embodiment of the invention to cut
The schematic diagram of road focal beam spot.
Fig. 3 is that two focal beam spot positions of the electronic rotation displacement platform in initial position show in the specific embodiment of the invention
It is intended to.
Fig. 4 is two when two focal beam spots and the angle in Cutting Road direction are θ angle in the specific embodiment of the invention
Focal beam spot position view.
Fig. 5 is that two focal beam spots are focused along the distance D in vertical Cutting Road direction and two in the specific embodiment of the invention
The relational graph that hot spot and the angle in Cutting Road direction are θ.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
Referring to Fig.1-5.
A kind of wafer laser grooving apparatus, it is characterised in that it includes laser 1, the first diaphragm 2, beam-expanding collimation mirror 3,
Two diaphragms 4, reflecting mirror 5, diffraction spectroscope 6, electronic rotation displacement platform 7, focus lamp 8 and motion platform 9, the laser 1,
First diaphragm 2, beam-expanding collimation mirror 3, the second diaphragm 4 and reflecting mirror 5 are coaxially disposed in the horizontal direction, the diffraction spectroscope 6, electricity
The lower section of reflecting mirror 5 is from top to bottom sequentially coaxially arranged in dynamic swing offset platform 7, focus lamp 8 and motion platform 9, and described spreads out
It penetrates spectroscope 6 to be mounted on electronic rotation displacement platform 7, wafer 10 to be processed is placed on motion platform 9；
Laser 1 launches laser beam, and laser beam successively passes through the first diaphragm 2, beam-expanding collimation mirror 3, the second diaphragm 4, anti-
Mirror 5 and diffraction spectroscope 6 are penetrated, diffraction spectroscope 6 exports the identical laser beam of two bundle natures, using focus lamp 8, two beam laser
Beam focuses on two focal beam spots 20 of formation on the wafer to be processed 10 being placed on motion platform 9, is rotated by rotary electric
Displacement platform 7 controls the rotation angle of diffraction spectroscope 6, changes the angle of two focal beam spots 20 and Cutting Road direction, and then control
Two focal beam spots 20 are made along the distance in vertical Cutting Road direction, that is, the spacing of Cutting Road can be changed.
The present apparatus is not to be directly changed the spacing of two focal beam spots 20, but it is indirect to pass through rotating diffraction spectroscope 6
Change two focal beam spots 20 along the distance in vertical Cutting Road direction, mode of operation is simple and convenient；And two focusing of the present apparatus
The center of hot spot 20 remains unchanged, and by adjusting the rotation angle of electronic rotation displacement platform 7, diffraction spectroscope 6 is adjusted
Rotation angle, change the angle of two focal beam spots 20 and Cutting Road direction, change two focal beam spots 20 along vertically cutting
The distance for cutting direction has achieved the effect that change Cutting Road spacing, this mode change Cutting Road spacing, and speed faster, is imitated
Fruit is more stable, and can product with consecutive variations, suitable for various width.
In the present embodiment, 6 center of diffraction spectroscope is overlapped with the rotation center of electronic rotation displacement platform 7.
In the present embodiment, the reflecting mirror 5 is 45 ° of total reflection mirrors.
A kind of working method of wafer laser grooving apparatus, it is characterised in that itself the following steps are included:
S1: wafer to be processed is placed on the moving platform, electronic rotation displacement platform is rotated to initial position；
S2: laser launches laser beam, after the veiling glare that the first diaphragm filters out edge enters beam-expanding collimation mirror, swashs
Light beam filters out edge veiling glare after reflecting mirror reflects by the second diaphragm, is incident in diffraction spectroscope and is beamed into two beams and has
The laser beam of consistent energy, hot spot form, polarization state, using focus lamp, two beam laser beam focus are flat in being placed on movement
Two focal beam spots are formed on wafer to be processed on platform；
S3: by rotary electric swing offset platform control diffraction spectroscope rotation angle, change two focal beam spots with
The angle in Cutting Road direction, and then two focal beam spots are controlled along the distance in vertical Cutting Road direction, it is cut required for being adapted to
Road spacing；
S4: motion platform is moved along a straight line, and focal beam spot forms the parallel Cutting Road of twice on wafer to be processed；
S5: repeating step S3, S4, until the Cutting Road on wafer to be processed uniformly fills the slot for foring required width.
Further, distance of two focal beam spots on wafer to be processed is Dmax, and two focal beam spots are in crystalline substance to be processed
Distance on circle along vertical Cutting Road direction is D, and the angle in two focal beam spots and Cutting Road direction is θ, rotating diffraction light splitting
Mirror changes the angle of two focal beam spots and Cutting Road direction, so that distance D of two focal beam spots along vertical Cutting Road direction
Available control, variation range are 0~Dmax, and can consecutive variations.
Further, when electronic rotation displacement platform is rotated to initial position, two focal beam spots are on wafer to be processed at this time
Cutting Road direction distance it is maximum, i.e., Cutting Road spacing is maximum, when rotating diffraction spectroscope, changes two focal beam spots and cuts
The angle in direction is cut, distance of two focal beam spots along vertical Cutting Road direction becomes smaller.
Further, it is 50um that the spacing of two focal beam spots, which is Dmax, and the scribing line cutting width of single focal beam spot is
10um。
It is an advantage of the present invention that laser beam is divided into two bundles with consistent energy by the device using diffraction spectroscope
Two beam laser are focused on formation Cutting Road on machined material by focus lamp and gathered by the laser beam of amount, hot spot form, polarization state
Burnt hot spot；And diffraction spectroscope is mounted on electronic rotation displacement platform, can adjust diffraction point by electronic rotation displacement platform
The rotation angle of light microscopic, changes the angle of two focal beam spots and Cutting Road direction, changes two focal beam spots along vertical cutting
The distance in road direction, and then the spacing of Cutting Road is continuously adjusted, mode of operation is simple and convenient.And the present apparatus utilizes diffraction spectroscope
Laser beam is divided into two bundles the laser beam with consistent energy, hot spot form, polarization state, process velocity is compared to existing skill
Art is promoted at double.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (7)
1. a kind of wafer laser grooving apparatus, it is characterised in that it includes laser, the first diaphragm, beam-expanding collimation mirror, the second light
Door screen, reflecting mirror, diffraction spectroscope, electronic rotation displacement platform, focus lamp and motion platform, the laser, expand the first diaphragm
Collimating mirror, the second diaphragm and reflecting mirror are coaxially disposed in the horizontal direction, and the diffraction spectroscope, focuses electronic rotation displacement platform
The lower section of reflecting mirror is from top to bottom sequentially coaxially arranged in mirror and motion platform, and the diffraction spectroscope is mounted on electronic rotation
On displacement platform, wafer to be processed is placed on motion platform；
Laser launches laser beam, and laser beam successively passes through the first diaphragm, beam-expanding collimation mirror, the second diaphragm, reflecting mirror and spreads out
Spectroscope is penetrated, diffraction spectroscope exports the identical laser beam of two bundle natures, and using focus lamp, two beam laser beam focus are in placement
Two focal beam spots are formed on wafer to be processed on the moving platform, and diffraction light splitting is controlled by rotary electric swing offset platform
The rotation angle of mirror changes the angle of two focal beam spots and Cutting Road direction, and then controls two focal beam spots edges and vertically cut
Cut the distance in direction, i.e., the spacing of changeable Cutting Road.
2. a kind of wafer laser grooving apparatus as described in claim 1, it is characterised in that the diffraction spectroscope center and electricity
The rotation center of dynamic swing offset platform is overlapped.
3. a kind of wafer laser grooving apparatus as described in claim 1, it is characterised in that the reflecting mirror is 45 ° of total reflections
Mirror.
4. a kind of working method of wafer laser grooving apparatus, it is characterised in that itself the following steps are included:
S1: wafer to be processed is placed on the moving platform, electronic rotation displacement platform is rotated to initial position；
S2: laser launches laser beam, after the veiling glare that the first diaphragm filters out edge enters beam-expanding collimation mirror, laser beam
Edge veiling glare is filtered out after reflecting mirror reflects by the second diaphragm, is incident in diffraction spectroscope and is beamed into two beams with consistent
Energy, hot spot form, polarization state laser beam, using focus lamp, two beam laser beam focus are in placing on the moving platform
Wafer to be processed on formed two focal beam spots；
S3: controlling the rotation angle of diffraction spectroscope by rotary electric swing offset platform, changes two focal beam spots and cutting
The angle in road direction, and then two focal beam spots are controlled between the distance in vertical Cutting Road direction, Cutting Road required for being adapted to
Away from；
S4: motion platform is moved along a straight line, and focal beam spot forms the parallel Cutting Road of twice on wafer to be processed；
S5: repeating step S3, S4, until the Cutting Road on wafer to be processed uniformly fills the slot for foring required width.
5. a kind of working method of wafer laser grooving apparatus as claimed in claim 4, it is characterised in that described two focusing
Distance of the hot spot on wafer to be processed is Dmax, and described two focal beam spots are on wafer to be processed along vertical Cutting Road direction
Distance be D, the angle in two focal beam spots and Cutting Road direction is θ, rotating diffraction spectroscope, change two focal beam spots with
The angle in Cutting Road direction, so that distance D available control of two focal beam spots along vertical Cutting Road direction, variation range
It is 0~Dmax, and can consecutive variations.
6. a kind of working method of wafer laser grooving apparatus as claimed in claim 5, it is characterised in that when electronic rotation position
Moving stage is rotated to initial position, and the distance in Cutting Road direction of two focal beam spots on wafer to be processed is maximum at this time, that is, is cut
Cut spacing maximum；When rotating diffraction spectroscope, change the angle of two focal beam spots and Cutting Road direction, two focal beam spots
Spacing become smaller.
7. a kind of working method of wafer laser grooving apparatus as claimed in claim 4, it is characterised in that two focal beam spots
Spacing be Dmax be 50um, the scribing line cutting width of single focal beam spot is 10um.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910718488.4A CN110405361A (en) | 2019-08-05 | 2019-08-05 | A kind of wafer laser grooving apparatus and its working method |
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| CN201910718488.4A CN110405361A (en) | 2019-08-05 | 2019-08-05 | A kind of wafer laser grooving apparatus and its working method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112676707A (en) * | 2020-12-31 | 2021-04-20 | 深圳盛方科技有限公司 | Laser marking machine and light path adjusting method of laser |
| CN114029610A (en) * | 2022-01-06 | 2022-02-11 | 苏州迈为科技股份有限公司 | Wafer processing device and processing method |
| CN116673604A (en) * | 2023-07-10 | 2023-09-01 | 武汉元禄光电技术有限公司 | Method and device for increasing single laser etching line width and improving efficiency |
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| CN112676707A (en) * | 2020-12-31 | 2021-04-20 | 深圳盛方科技有限公司 | Laser marking machine and light path adjusting method of laser |
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| CN116673604A (en) * | 2023-07-10 | 2023-09-01 | 武汉元禄光电技术有限公司 | Method and device for increasing single laser etching line width and improving efficiency |
| CN116673604B (en) * | 2023-07-10 | 2024-03-26 | 武汉元禄光电技术有限公司 | Method and device for increasing single laser etching line width and improving efficiency |
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