CN112427814A - Laser pre-segmentation device and laser pre-segmentation method - Google Patents
Laser pre-segmentation device and laser pre-segmentation method Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
Abstract
The invention relates to the technical field of laser processing, in particular to a laser pre-segmentation device and a laser pre-segmentation method. The laser pre-segmentation device is used for processing an LED wafer of a sapphire substrate and comprises a processing platform, a motion control mechanism, a visual detection mechanism and an optical mechanism, wherein the processing platform is used for fixing the LED wafer of the sapphire substrate, the motion control mechanism can drive the processing platform or the optical mechanism to move, and the visual detection mechanism is used for detecting the relative position of the processing platform and the optical mechanism; the optical mechanism comprises a laser, a non-diffraction beam generation module and a beam shaping module, the laser can emit initial laser beams, the initial laser beams can form initial non-diffraction beams after passing through the non-diffraction beam generation module, the initial non-diffraction beams can form shaping non-diffraction beams after passing through the beam shaping module, and the energy of the shaping non-diffraction beams is uniformly distributed along the propagation direction. The section of the LED wafer of the sapphire substrate after the splitting is formed regularly, and the oblique splitting angle can be reduced.
Description
Technical Field
The invention relates to the technical field of laser processing, in particular to a laser pre-segmentation device and a laser pre-segmentation method.
Background
The LED is widely applied to a plurality of fields of national life by the characteristics of energy conservation, environmental protection, high efficiency and low energy consumption, and in order to prepare more chips by using LED round wafers with the same area, new products for reducing the width of a cutting path (the distance between adjacent chips) or the size of a single chip are continuously emerged in the market at present. However, in order to ensure that the individual chips formed by separating the products with smaller dicing streets can meet the application requirements, the level of the manufacturing process needs to be improved.
As a main substrate material adopted by the existing LED wafer, certain oblique fracture is easy to occur after sapphire is vertically cut in two directions, and although the oblique fracture is a problem frequently occurring when the LED wafer with the sapphire substrate is processed, the oblique fracture becomes a key for restricting the reduction of the width of a cutting path. At present, the width of a cutting track of a sapphire substrate is basically larger than 15 micrometers, so that the requirement on a diagonal crack angle is lower, and an electrode surface is not easily damaged when a larger diagonal crack angle exists. However, the sapphire substrate with the reduced scribe line width requires a smaller bevel angle under the same conditions to ensure the performance of the divided chips. In addition, due to the smaller size of individual devices in some products, the oblique angle is too large to be a good package for near-oblique cube applications. Moreover, the smaller scribe line width and chip size also means that a focused beam with more concentrated energy distribution is required to ensure that the electrode area is not damaged during the dicing process.
The laser internal modification scribing technology has already occupied the processing market of the LED by virtue of the advantages of small scribing defects such as edge breakage, microcrack and the like. Gaussian beams are the mainstream of laser wafer scribing at present, but after scribing, the section has more expanded lines, the oblique crack angle is large (larger than 4 degrees), and the electrode surface of a narrow cutting channel product is easily damaged by a focusing mode.
Disclosure of Invention
The invention aims to provide a laser pre-segmentation device and a laser pre-segmentation method, and aims to solve the problem that the width of a cutting path cannot be reduced because a larger oblique fracture angle is generated after an LED wafer with a sapphire substrate is cut.
In order to solve the problems, the invention provides a laser pre-segmentation device which is used for processing an LED wafer of a sapphire substrate and comprises a processing platform, a motion control mechanism, a visual detection mechanism and an optical mechanism, wherein the processing platform is used for fixing the LED wafer of the sapphire substrate, the motion control mechanism can drive the processing platform or the optical mechanism to move, and the visual detection mechanism is used for detecting the relative position of the processing platform and the optical mechanism;
the optical mechanism comprises a laser, a non-diffraction beam generation module and a beam shaping module, the laser can emit an initial laser beam, the initial laser beam can form an initial non-diffraction beam after passing through the non-diffraction beam generation module, the initial non-diffraction beam can form a shaped non-diffraction beam after passing through the beam shaping module, and the energy of the shaped non-diffraction beam is uniformly distributed along the propagation direction.
Optionally, the beam shaping module comprises a shaping member provided with a circular hole, and the refractive index of the shaping member increases in a radially outward direction of the circular hole.
Optionally, the initial non-diffractive beam generation module comprises an axicon, a combination lens, or a spatial light modulator.
Optionally, the pulse width of the initial laser beam is less than 50 picoseconds and the single pulse energy is greater than or equal to 10 microjoules.
Optionally, the spot diameter of the undiffracted beam is less than 10 microns.
Optionally, the optical mechanism further includes a focusing module, the focusing module includes a field lens and an objective lens, a magnification of the objective lens is greater than 30, and a numerical aperture of the objective lens is greater than 0.3.
Optionally, the motion control mechanism is capable of driving the processing stage or the optical mechanism to move in a direction in which the shaped non-diffracted beam illuminates the LED wafer of the sapphire substrate.
In addition, the invention also provides a laser pre-segmentation method for processing the LED wafer of the sapphire substrate, which comprises the following steps:
providing a laser pre-segmentation apparatus as described in any one of the above;
fixing the LED wafer of the sapphire substrate on the processing platform, and adjusting the relative position of the optical mechanism and the LED wafer of the sapphire substrate through the motion control mechanism and the visual detection mechanism;
the laser generates the initial laser beam, and the initial laser beam sequentially passes through the non-diffraction beam generation module and the beam shaping module to form the shaped non-diffraction beam; and
and changing the relative position of the optical mechanism and the LED wafer of the sapphire substrate through the motion control mechanism, and enabling the shaped diffraction-free beam to move relative to the LED wafer of the sapphire substrate, so that a modified layer is formed inside the LED wafer of the sapphire substrate along a cutting path.
Optionally, the modified layer has a size greater than one third of a size of the LED wafer of the sapphire substrate in a direction in which the shaped, diffraction-free beam illuminates the LED wafer of the sapphire substrate.
In addition, the invention also provides an LED wafer of the sapphire substrate, wherein the LED wafer of the sapphire substrate is provided with a cutting channel, and the width of the cutting channel is less than 12 microns.
The embodiment of the invention has the following beneficial effects:
the optical mechanism of the laser pre-segmentation device comprises a laser, a non-diffraction beam generation module and a beam shaping module, wherein an initial laser beam generated by the laser can form an initial non-diffraction beam after passing through the non-diffraction beam generation module, the initial non-diffraction beam can form a shaped non-diffraction beam with energy uniformly distributed along the propagation direction after passing through the beam shaping module, and a modified layer can be formed inside an LED wafer of a sapphire substrate when the shaped non-diffraction beam irradiates the LED wafer of the sapphire substrate so as to form a cutting path. The initial non-diffraction light beam is basically not diverged when being transmitted, and the central light spot is extremely small, so that the modified layer is more regular, and the smaller central light spot can be used for forming a narrower cutting channel. Meanwhile, the energy of the shaped diffraction-free beam is uniformly distributed along the propagation direction, so that the width of the modified layer is uniformly distributed in the thickness direction of the wafer. Therefore, the section of the LED wafer of the sapphire substrate after splitting is formed regularly, the oblique splitting angle caused by laser cutting can be effectively reduced, the electrode surface is protected, and possibility is provided for reducing the width of a cutting path.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Wherein:
FIG. 1 is a schematic diagram of a laser pre-segmentation apparatus in one embodiment;
FIG. 2 is a diagram showing the effect of the initial laser beam on the cross section and the bevel angle after the initial laser beam directly cuts the LED wafer of the sapphire substrate;
FIG. 3 is a diagram showing the effect of the laser pre-dividing apparatus of FIG. 1 on the cross section and the bevel angle of an LED wafer with a sapphire substrate cut;
FIG. 4 is an effect diagram of the cross section and the bevel angle after cutting an LED wafer of a sapphire substrate by using different laser pre-cutting devices and laser pre-cutting methods;
fig. 5 is an effect diagram of a chip processed by the laser pre-dividing device in fig. 1.
The reference numbers in the specification are as follows:
10. a non-diffracted beam generating module;
20. a beam shaping module;
30. a field lens;
40. an objective lens;
50. a sapphire substrate LED wafer.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that all the directional indicators (such as up, down, left, right, front, and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the movement situation, etc. in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indicator is changed accordingly.
In addition, the descriptions related to "first", "second", etc. in the present invention are for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
An embodiment of the invention provides a laser pre-segmentation device, which comprises a processing platform, a motion control mechanism, a visual detection mechanism and an optical mechanism. The processing platform is used for fixing the LED wafer 50 of the sapphire substrate, the motion control mechanism can drive the processing platform or the optical mechanism to move, and the visual detection mechanism is used for detecting the relative position of the processing platform and the optical mechanism.
As shown in fig. 1, the optical mechanism includes a laser, a non-diffractive beam generating module 10, and a beam shaping module 20. The laser is capable of emitting an initial laser beam, and the initial laser beam is capable of forming an initial undiffracted beam after passing through the undiffracted beam generating module 10. The initial non-diffracted beam is not substantially divergent during propagation, so that the modified layer is more regular. Moreover, the central spot of the initial non-diffracted beam is extremely small, within 10 microns, and the width of the cutting path can be reduced to a certain extent. The initial undiffracted beam can form a shaped undiffracted beam after passing through the beam shaping module 20, and the energy of the shaped undiffracted beam is uniformly distributed along the propagation direction. Therefore, the section of the LED wafer 50 with the sapphire substrate after splitting is formed regularly, the oblique splitting caused by laser cutting can be effectively avoided, the electrode surface is protected, and the possibility of reducing the width of a cutting channel is provided
In this embodiment, the pulse width of the initial laser beam is less than 50 picoseconds, the single pulse energy is greater than or equal to 10 microjoules, and the wavelength can meet the requirement of focusing inside the sapphire substrate for modification processing, such as 532, 800, or 1030 nm. The beam shaping module 20 comprises an axicon, and diffracted light formed after the initial laser beam passes through the axicon generates an initial undiffracted beam by wavefront interference. In other embodiments, the beam shaping module 20 may also be a combination lens, spatial light modulator, or other element capable of producing a non-diffracted beam.
As can be seen from fig. 1, the energy of the initial undiffracted beam is non-uniformly distributed along the propagation direction, and the energy at the front end and the rear end is much smaller than that in the middle area. Moreover, in practical situations, the energy at the back end is smaller than the energy at the front end. The initial non-diffracted light beam is easy to damage the electrode surface due to uneven energy distribution, and the cut wafer is easy to break randomly (break along the cutting path or break irregularly completely). Therefore, the initial undiffracted beam needs to be shaped.
In this embodiment, the beam shaping module 20 includes a shaping member provided with a circular hole, and the refractive index of the shaping member increases in a radially outward direction of the circular hole. When the initial non-diffraction light beam passes through the shaping piece, the shaping piece can converge the energy of the outer ring of the initial non-diffraction light beam, so that the energy distribution of the outer ring is more uniform.
It is noted that by varying the index of refraction of the shaping element and the diameter of the circular aperture, the focusing effect of the shaping element on the energy of the outer ring of the initial undiffracted beam will be different. Thus, by selecting different sizes of shaping members, the thickness of the modified layer (i.e., the dimension of the modified layer in the direction in which the shaped non-diffracted beam irradiates the LED wafer 50 of the sapphire substrate) can be varied. When a profile with a larger gradient of refractive index change is used, the thickness of the modified layer is reduced, whereas the thickness of the modified layer is increased.
In the present embodiment, the visual inspection mechanism includes a CCD, a present reflection and semi-transparent mirror, and an objective lens 40 capable of realizing coaxial imaging. When a user controls the machining platform or the optical mechanism to move through the motion control mechanism, the relative position of the machining platform and the optical mechanism can be observed through the visual detection device, so that the focus searching and cutting positioning in the cutting process are realized, and the cutting of different parameters can be realized under the regulation of the control system.
In addition, the optical mechanism further includes a focusing module, which is located on a side of the beam shaping module 20 away from the non-diffracted beam generating module 10 to focus and shape the non-diffracted beam, so as to further reduce the width of the scribe line. In this embodiment, the beam shaping module 20 is located between the non-diffraction beam generating module 10 and the focusing module, and in other embodiments, the beam shaping module 20 may also be attached to the surface of the optical element of the focusing module. Moreover, in this embodiment, the focusing module includes a field lens 30 and an objective lens 40, the magnification of the objective lens 40 is greater than 30, and the numerical aperture of the objective lens 40 is greater than 0.3, so that the focusing effect of shaping the diffraction-free beam is better, the spot diameter is further reduced, and the width of the scribe line is reduced.
The pre-dividing method and effect will be described below with reference to the LED wafer 50 of sapphire substrate having a thickness of 90 microns and a length and width of a single chip of 225 microns and 125 microns, respectively, and in this embodiment, the pulse width of the initial laser beam of gaussian energy distribution generated by the laser is 3 picoseconds, the wavelength is 1030 nanometers, and the maximum pulse energy is 100 microjoules.
Before processing, the LED wafer 50 of the sapphire substrate is fixed on a processing platform, and the relative position of the optical mechanism and the LED wafer 50 of the sapphire substrate is adjusted through the motion control mechanism and the visual detection mechanism so as to determine the initial processing position. Then, the laser is turned on, the laser generates an initial laser beam, the initial laser beam forms a non-diffracted beam through the non-diffracted beam generating module 10, the non-diffracted beam forms a shaped non-diffracted beam through the beam shaping module 20, and the shaped non-diffracted beam irradiates the sapphire substrate to form a modified layer inside the sapphire substrate. Then, the relative position of the optical mechanism and the sapphire substrate LED wafer 50 is changed by the motion control mechanism, so that the shaped non-diffracted beam moves relative to the sapphire substrate LED wafer 50, and a modified layer is formed inside the sapphire substrate along the scribe lines. In view of the process for manufacturing the LED wafer 50 of sapphire substrate, the pitches of the processing points in the horizontal direction and the vertical direction are 6 micrometers and 12 micrometers, respectively.
The initial non-diffraction light beam is basically not diverged when being transmitted, and the central light spot is extremely small, so that the modified layer is more regular, and the smaller central light spot can be used for forming a narrower cutting channel. Meanwhile, the energy of the shaped diffraction-free beam is uniformly distributed along the propagation direction, so that the width of the modified layer is uniformly distributed in the thickness direction of the wafer. Therefore, the section of the LED wafer 50 with the sapphire substrate after splitting is formed regularly, the oblique splitting angle caused by laser cutting can be effectively reduced, the electrode surface is protected, and the possibility of reducing the width of a cutting path is provided.
Referring also to fig. 2, as shown in fig. 2, if the LED wafer 50 of sapphire substrate is directly processed by the initial laser beam generated by the laser, the scribed section has more extended lines and larger oblique crack angle (greater than 4 °), and the electrode surface is damaged.
Referring to fig. 3 together, fig. 3 is a diagram illustrating an effect of completely separating the LED wafer 50 of the sapphire substrate into a plurality of chips by using the laser pre-dividing apparatus and the laser pre-dividing method. As can be seen from the figure, after the laser pre-segmentation device and the pre-segmentation method are adopted to form the cutting lines on the LED wafer 50 of the sapphire substrate, the LED wafer 50 of the sapphire substrate is cut along the cutting lines without damage to the electrode surface, the straightness of the cut cracks is high, and the cutting lines in the two directions are kept perpendicular. Meanwhile, the section of a single chip after splitting in two directions is well formed, and basically no crack exists except the modified area. Thus, the increase of the fracture surface cracks after cutting can be avoided, and the subsequent splitting treatment which is caused by the disordered splitting of the LED wafer 50 of the whole sapphire substrate after multiple times of cutting at small intervals can be avoided. It is worth mentioning that the oblique crack angle in fig. 3 is smaller than 1.5 °, which is greatly improved compared with the oblique crack angle in fig. 2, and the subsequent application performance of the separated chip can be ensured.
For clearly showing the effect of the LED wafer 50 of sapphire substrate processed by the laser pre-dividing apparatus and the laser pre-dividing method of the present invention after splitting, refer to the effect of the chip formed by different laser pre-dividing apparatuses and laser pre-dividing methods in fig. 4.
In fig. 4a, the short modified layer is used for cutting, and after cutting, the oblique crack angle will be large and easily extend to the electrode surface; FIG. 4b shows the effect of the modified layer after cutting by using an appropriate optical system to lengthen the Gaussian beam, and the method still has a large oblique fracture angle due to the non-uniformity of the modified layer, and can refer to FIG. 2; FIG. 4c is a schematic diagram of an initial non-diffraction beam cutting method, which can greatly reduce the oblique crack angle, but the uneven energy distribution is easy to damage the electrode surface and easily causes the LED wafer after cutting to be randomly cracked; FIG. 4d is a schematic diagram of the cutting effect of the present invention using the shaped non-diffracted beam, the processed focal depth can reduce the oblique splitting angle, and the focused beam after energy shaping will not damage the electrode surface during the processing.
It should be noted that in this embodiment, the motion control mechanism can drive the processing platform or the optical mechanism to move along the direction of the shaped diffraction-free beam irradiating the LED wafer 50 of the sapphire substrate, so as to change the position of the modified layer.
In this embodiment, the size of the modified layer is greater than one third of the size of the sapphire substrate in the direction of the LED wafer 50 where the shaped diffraction-free beam irradiates the sapphire substrate. In this case, cracking is ensured, and the modified layer is prevented from affecting the electrode surface.
As shown in fig. 5, the effect diagram of the LED wafer 50 with sapphire substrate pre-divided by using the laser pre-dividing apparatus and the laser pre-dividing method is shown, in which the width of the cutting line is 10 micrometers, and the narrowest position is only about 5 micrometers, so as to produce more chips by fully utilizing the LED wafer 50 with sapphire substrate.
The above disclosure is only for the purpose of illustrating the preferred embodiments of the present invention, and it is therefore to be understood that the invention is not limited by the scope of the appended claims.
Claims (10)
1. A laser pre-segmentation device is used for processing an LED wafer of a sapphire substrate and is characterized by comprising a processing platform, a motion control mechanism, a visual detection mechanism and an optical mechanism, wherein the processing platform is used for fixing the LED wafer of the sapphire substrate, the motion control mechanism can drive the processing platform or the optical mechanism to move, and the visual detection mechanism is used for detecting the relative position of the processing platform and the optical mechanism;
the optical mechanism comprises a laser, a non-diffraction beam generation module and a beam shaping module, the laser can emit an initial laser beam, the initial laser beam can form an initial non-diffraction beam after passing through the non-diffraction beam generation module, the initial non-diffraction beam can form a shaped non-diffraction beam after passing through the beam shaping module, and the energy of the shaped non-diffraction beam is uniformly distributed along the propagation direction.
2. The laser pre-dividing apparatus of claim 1, wherein the beam shaping module comprises a shaping member having a circular aperture, and wherein the shaping member has a refractive index that increases in a radially outward direction of the circular aperture.
3. The laser pre-segmentation apparatus of claim 1, wherein the initial non-diffractive beam generation module comprises an axicon, a combining lens, or a spatial light modulator.
4. The laser pre-segmentation apparatus as set forth in claim 1, wherein the pulse width of the initial laser beam is less than 50 picoseconds and the single pulse energy is greater than or equal to 10 microjoules.
5. The laser pre-dividing apparatus of claim 1, wherein the spot diameter of the non-diffracted beam is less than 10 microns.
6. The laser pre-segmentation apparatus as claimed in claim 1, wherein the optical mechanism further comprises a focusing module, the focusing module comprises a field lens and an objective lens, a magnification of the objective lens is greater than 30, and a numerical aperture of the objective lens is greater than 0.3.
7. The laser pre-segmentation apparatus as claimed in claim 1, wherein the motion control mechanism is capable of driving the processing stage or the optical mechanism to move in a direction in which the shaped non-diffracted beam irradiates the LED wafer of the sapphire substrate.
8. A laser pre-segmentation method is used for processing an LED wafer of a sapphire substrate, and is characterized by comprising the following steps:
providing a laser pre-segmentation apparatus as claimed in any one of claims 1 to 7;
fixing the LED wafer of the sapphire substrate on the processing platform, and adjusting the relative position of the optical mechanism and the LED wafer of the sapphire substrate through the motion control mechanism and the visual detection mechanism;
the laser generates the initial laser beam, and the initial laser beam sequentially passes through the non-diffraction beam generation module and the beam shaping module to form the shaped non-diffraction beam; and
and changing the relative position of the optical mechanism and the LED wafer of the sapphire substrate through the motion control mechanism, and enabling the shaped diffraction-free beam to move relative to the LED wafer of the sapphire substrate, so that a modified layer is formed inside the LED wafer of the sapphire substrate along a cutting path.
9. The laser pre-segmentation method of claim 8, wherein the modified layer has a dimension greater than one-third of a dimension of the sapphire substrate in a direction in which the shaped, diffraction-free beam impinges on the LED wafer of the sapphire substrate.
10. The LED wafer of the sapphire substrate is characterized in that a cutting channel is formed in the LED wafer of the sapphire substrate, and the width of the cutting channel is smaller than 12 microns.
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| CN113644035A (en) * | 2021-08-06 | 2021-11-12 | 广东工业大学 | Semiconductor wafer and laser processing method and system thereof |
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| CN103760673A (en) * | 2014-01-06 | 2014-04-30 | 华侨大学 | Optical system for generating approximate diffraction-free zero-order Mathieu beam |
| US20160159679A1 (en) * | 2014-12-04 | 2016-06-09 | Corning Incorporated | Glass cutting systems and methods using non-diffracting laser beams |
| CN109613712A (en) * | 2018-12-24 | 2019-04-12 | 山东大学 | A kind of method and its realization device generating salt free ligands speckle using axicon phase distribution and azimuth Stochastic Modulation |
| CN109623172A (en) * | 2019-01-31 | 2019-04-16 | 大族激光科技产业集团股份有限公司 | A kind of laser cutting method and device of optical filter |
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| CN113644035A (en) * | 2021-08-06 | 2021-11-12 | 广东工业大学 | Semiconductor wafer and laser processing method and system thereof |
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