CN108513456A - Substrate through holes technique - Google Patents
Substrate through holes technique Download PDFInfo
- Publication number
- CN108513456A CN108513456A CN201810242801.7A CN201810242801A CN108513456A CN 108513456 A CN108513456 A CN 108513456A CN 201810242801 A CN201810242801 A CN 201810242801A CN 108513456 A CN108513456 A CN 108513456A
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- CN
- China
- Prior art keywords
- substrate
- electrode layer
- layer
- holes technique
- mask layer
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/425—Plated through-holes or plated via connections characterised by the sequence of steps for plating the through-holes or via connections in relation to the conductive pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
- H05K3/16—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation by cathodic sputtering
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
Abstract
The present invention relates to circuit board manufacturing areas, and in particular to a kind of substrate through holes technique includes the following steps：(1), one layer of mask layer is respectively printed in the front and back of the substrate with datum hole, the substrate other than a diameter of 0.1mm around datum hole is all covered；(2), it is sputtered by magnetron vacuum, respectively sputters one layer of metal electrode layer in the front and back for the substrate for having printed mask layer, be respectively formed via electrode layer, front electrode layer and back electrode layer；(3), the front and back mask layer of substrate is removed；(4), substrate is electroplated, sequentially forms nickel coating and tin coating from inside to outside on the surface of via electrode layer, front electrode layer and back electrode layer, the remaining part of datum hole forms via.The present invention realizes the via technique that the deeply smaller hole of extra small type hole and diameter is realized on substrate, and obtains preferable porosity excessively.
Description
Technical field
The present invention relates to circuit board manufacturing areas, and in particular to a kind of substrate through holes technique.
Background technology
Conductive silver glue or silver paste are printed on ceramic base by existing ceramic wafer via technology generally by screen printing technique
On the hole of plate, then by the way that vacuum absorption device is arranged in bottom, adsorb the slurry above hole to form via, in order to protect
The qualification rate for demonstrate,proving via, generally requires and respectively does one-step print and via process in ceramic substrate front and back.
The advantages of this via technology be it is simple for process, realize difficulty it is little, cost is relatively low；But this via skill
There is also many disadvantages for art, for example, due to the limitation of slurry viscosity, this via technology applies in general to the holes 0.2mm or more
The hole of diameter often because slurry crosses slurry difficulty, causes via qualification rate low in the hole in the apertures 0.2mm or less, especially for
The hole in the apertures 0.1mm or less cannot achieve via using this via technology；In addition, deep than (aperture and hole depth for the diameter of via
Ratio) be less than 1:5 hole, existing via technology are difficult to realize good via, it is bad usually to will appear via.
Invention content
The object of the present invention is to provide a kind of to realize the via technique in the deeply smaller hole of extra small type hole and diameter on substrate,
And it can get preferable porosity excessively.
To solve the above-mentioned problems, the present invention provides a kind of substrate through holes technique, include the following steps：
(1), one layer of mask layer is respectively printed in the front and back of the substrate with datum hole, it will be a diameter of around datum hole
Substrate other than 0.1mm all covers；
(2), it is sputtered by magnetron vacuum, one layer of metal electricity is respectively sputtered in the front and back for the substrate for having printed mask layer
Pole layer, is respectively formed via electrode layer, front electrode layer and back electrode layer；
(3), the front and back mask layer of substrate is removed；
(4), substrate is electroplated, the surface of via electrode layer, front electrode layer and back electrode layer from inside to outside
Nickel coating and tin coating are sequentially formed, the remaining part of datum hole forms via.
Preferably, the material of mask layer is water-soluble or alkali soluble resins in step (1).
Preferably, the thickness of the mask layer is 15-35um.
Preferably, in step (2), the sputtering power of magnetron vacuum sputtering is 500-5000W, and sputtering rate is
10-100cm/min。
Preferably, the thickness of the via electrode layer, front electrode layer and back electrode layer is 100-1000nm.
Preferably, in step (4), the thickness of nickel coating is 3-12um, and the thickness of tin coating is 4-12um.
Preferably, the substrate is ceramic substrate.
Preferably, the material of the via electrode layer, front electrode layer and back electrode layer is that titanium or titanium tungsten are closed
Gold.
The substrate through holes technique of the present invention is sputtered on substrate using magnetron vacuum, and via electrode layer, front electricity are sputtered
Pole layer and back electrode layer as substrate, using electroplating technology via electrode layer, front electrode layer and back electrode layer table
Face sequentially forms nickel coating and tin coating from inside to outside, forms via, realizes and realize extra small type hole and diameter depth ratio on substrate
The via technique in smaller hole, and obtain it is preferable cross porosity, and the via electrode layer to be formed, just is sputtered using magnetron vacuum
Face electrode layer and back electrode layer are combined with substrate than stronger, with preferable corrosion resistance characteristic.
Description of the drawings
Fig. 1 is the schematic diagram that mask layer is printed out on substrate of the substrate through holes technique of one embodiment of the present invention；
Fig. 2 is formation via electrode layer, the front electricity on substrate of the substrate through holes technique of one embodiment of the present invention
The schematic diagram of pole layer and back electrode layer；
Fig. 3 is the schematic diagram of the removal mask layer of the substrate through holes technique of one embodiment of the present invention；
Fig. 4 is the schematic diagram by forming via after plating of the substrate through holes technique of one embodiment of the present invention.
Wherein, 1, substrate；2, mask layer；3, via electrode layer；4, front electrode layer；5, back electrode layer；6, nickel coating；
7, tin coating；8, via；9, datum hole.
Specific implementation mode
With reference to the accompanying drawings and examples, the specific implementation mode of the present invention is described in further detail.Implement below
Example is not limited to the scope of the present invention for illustrating the present invention.
The embodiment of the invention discloses a kind of substrate through holes techniques, include the following steps：
(1), it as shown in Figure 1, the front and back in the substrate 1 with datum hole 9 respectively prints one layer of mask layer 2, prints out
Mask layer 2 substrate 1 other than a diameter of 0.1mm around datum hole 9 is all covered, wherein substrate 1 is ceramic substrate；
(2), it as shown in Fig. 2, being sputtered by magnetron vacuum, is respectively splashed in the front and back for the substrate 1 for having printed mask layer 2
One layer of metal electrode layer is penetrated, via electrode layer 3, front electrode layer 4 and back electrode layer 5 are respectively formed；
(3), as shown in figure 3, the front and back mask layer 2 of substrate 1 is removed, only retain the sputtering on 9 hole wall of datum hole
Via electrode layer 3 and datum hole 9 around front electrode layer 4 and back electrode layer 5；
(4), as shown in figure 4, substrate 1 is electroplated, in via electrode layer 3, front electrode layer 4 and back electrode layer 5
Surface sequentially form nickel coating 6 and tin coating 7 from inside to outside, 9 remaining part of datum hole forms via 8；Wherein, nickel coating
6 be intermediate buffer layer, and tin coating 7 is used to weld with other outer members.
The substrate through holes technique of the embodiment of the present invention realizes realizes extra small type hole (aperture 0.05- on substrate 1
0.1mm) and (diameter is deeply than being less than 1 in diameter deeply smaller hole:5) via technique, and preferable porosity excessively is obtained, and use magnetic
Via electrode layer, front electrode layer and the back electrode layer that control vacuum sputtering is formed are combined with substrate than stronger, with preferable
Corrosion resistance characteristic.
Preferably, the material of mask layer 2 is water-soluble or alkali soluble resins in step (1), so that on substrate 1
Be easier to print out mask layer 2, and water solubility resin can be removed with water, and alkali soluble resins may be used alkalinity it is molten
Liquid, such as sodium hydroxide removal；In addition, the thickness of mask layer 2 is 15-35um, to obtain preferable shade effect, mask layer 2
It is too thin, the electrode layer subsequently sputtered can be caused directly to be contacted with substrate 1, and preferable shade effect is not had, mask layer 2 is too
It is thick then mask layer 2 can be caused to be not easy to remove, influence the via quality of substrate 1.
Preferably, in step (2), the sputtering power of magnetron vacuum sputtering is 500-5000W, sputtering rate 10-
100cm/min can ensure that the electrode layers thickness of sputtering is relatively uniform, improve the quality of sputtering electrode layer in this way；Cross pore electrod
The material of layer 3, front electrode layer 4 and back electrode layer 5 is titanium or titanium-tungsten, it is ensured that the hole wall with the datum hole 9 of substrate 1
Binding force it is more preferable, and have preferable corrosion resistance；The thickness of via electrode layer 3, front electrode layer 4 and back electrode layer 5
Degree is 100-1000nm, film layer consistency difference and resistivity can be caused excessive this is because electrode layer is too thin, make to be conductively connected effect
Fruit is deteriorated, and electrode layer is too thick, and low production efficiency, cost can be caused excessively high.
Preferably, in step (4), the thickness of nickel coating is 3-12um, and the thickness of tin coating is 4-12um, this is because
Nickel coating is too thin to be not achieved the effect for improving mechanical strength, and tin coating is too thin, is not achieved preferable welding performance, and nickel coating
With tin coating is too thick can cause low production efficiency, cost excessively high.
The via technique of the embodiment of the present invention and the existing via using screen printing technique are obtained by Experimental Comparison
Technique, for the via effect in the hole of different diameter depth ratios, table specific as follows：
Table one
From the data of table one can be seen that the substrate through holes technique of the embodiment of the present invention the hole of 8 groups of difference diameter depth ratios all
It can realize good via effect, and use the via technique of silk-screen printing, in diameter deeply than being less than 1:The mistake porosity of 5 several sets of apertures
All it is decreased obviously.
In conclusion the substrate through holes technique of the embodiment of the present invention realizes realizes that (aperture is extra small type hole on substrate 1
0.05-0.1mm) and (diameter is deeply than being less than 1 in diameter deeply smaller hole:5) via technique, and preferable porosity excessively is obtained, and
Pore electrod layer, front electrode layer and the back electrode layer to be formed are sputtered using magnetron vacuum to be combined with substrate than stronger, are had
Preferable corrosion resistance characteristic.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, without departing from the technical principles of the invention, several improvement and replacement can also be made, these improve and replace
Also it should be regarded as protection scope of the present invention.
Claims (8)
1. a kind of substrate through holes technique, which is characterized in that include the following steps：
(1), the front and back of the substrate with datum hole respectively printing one layer of mask layer, by a diameter of 0.1mm around datum hole with
Outer substrate all covers；
(2), it is sputtered by magnetron vacuum, one layer of metal electrode is respectively sputtered in the front and back for the substrate for having printed mask layer
Layer, is respectively formed via electrode layer, front electrode layer and back electrode layer；
(3), the front and back mask layer of substrate is removed；
(4), substrate is electroplated, the surface of via electrode layer, front electrode layer and back electrode layer from inside to outside successively
Nickel coating and tin coating are formed, the remaining part of datum hole forms via.
2. substrate through holes technique according to claim 1, which is characterized in that the material of mask layer is water-soluble in step (1)
Property or alkali soluble resins.
3. substrate through holes technique according to claim 1 or 2, which is characterized in that the thickness of the mask layer is 15-
35um。
4. substrate through holes technique according to claim 1, which is characterized in that in step (2), the sputtering of magnetron vacuum sputtering
Power is 500-5000W, sputtering rate 10-100cm/min.
5. substrate through holes technique according to claim 1 or 4, which is characterized in that the via electrode layer, front electrode layer
And the thickness of back electrode layer is 100-1000nm.
6. substrate through holes technique according to claim 1, which is characterized in that in step (4), the thickness of nickel coating is 3-
The thickness of 12um, tin coating are 4-12um.
7. substrate through holes technique according to claim 1, which is characterized in that the substrate is ceramic substrate.
8. substrate through holes technique according to claim 1, which is characterized in that the via electrode layer, front electrode layer and
The material of back electrode layer is titanium or titanium-tungsten.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810242801.7A CN108513456A (en) | 2018-03-22 | 2018-03-22 | Substrate through holes technique |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810242801.7A CN108513456A (en) | 2018-03-22 | 2018-03-22 | Substrate through holes technique |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108513456A true CN108513456A (en) | 2018-09-07 |
Family
ID=63378237
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810242801.7A Pending CN108513456A (en) | 2018-03-22 | 2018-03-22 | Substrate through holes technique |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108513456A (en) |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4402998A (en) * | 1982-01-04 | 1983-09-06 | Western Electric Co., Inc. | Method for providing an adherent electroless metal coating on an epoxy surface |
| CN1527656A (en) * | 2003-09-19 | 2004-09-08 | 波 曹 | Magnetically controlled sputtering process of making printed circuit board |
| CN1597333A (en) * | 2003-09-19 | 2005-03-23 | 希毕克斯影像有限公司 | Process for forming a patterned thin film structure for in-mold decoration |
| CN1812004A (en) * | 2005-01-28 | 2006-08-02 | 大毅科技股份有限公司 | Method for producing multi-circuit element wafer with salient pole |
| CN101268524A (en) * | 2005-09-15 | 2008-09-17 | 松下电器产业株式会社 | Chip-shaped electronic component |
| CN101448364A (en) * | 2007-11-26 | 2009-06-03 | 同欣电子工业股份有限公司 | Method for producing small-pore-diameter copper-plated through hole on ceramic substrate |
| CN201576518U (en) * | 2010-01-19 | 2010-09-08 | 南京萨特科技发展有限公司 | High power precise chip resistor |
| CN103943291A (en) * | 2014-02-21 | 2014-07-23 | 南京萨特科技发展有限公司 | Static suppressor with overcurrent protection functions, and manufacturing method thereof |
| CN105304326A (en) * | 2014-06-11 | 2016-02-03 | 阿维科斯公司 | Low noise capacitors |
| CN105899003A (en) * | 2015-11-06 | 2016-08-24 | 武汉光谷创元电子有限公司 | Single layer circuit board, multilayer circuit board and manufacture method for single layer circuit board and multilayer circuit board |
| CN106535502A (en) * | 2016-10-17 | 2017-03-22 | 奥士康精密电路（惠州）有限公司 | Electroplating method of high-aspect ratio circuit board |
-
2018
- 2018-03-22 CN CN201810242801.7A patent/CN108513456A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4402998A (en) * | 1982-01-04 | 1983-09-06 | Western Electric Co., Inc. | Method for providing an adherent electroless metal coating on an epoxy surface |
| CN1527656A (en) * | 2003-09-19 | 2004-09-08 | 波 曹 | Magnetically controlled sputtering process of making printed circuit board |
| CN1597333A (en) * | 2003-09-19 | 2005-03-23 | 希毕克斯影像有限公司 | Process for forming a patterned thin film structure for in-mold decoration |
| CN1812004A (en) * | 2005-01-28 | 2006-08-02 | 大毅科技股份有限公司 | Method for producing multi-circuit element wafer with salient pole |
| CN101268524A (en) * | 2005-09-15 | 2008-09-17 | 松下电器产业株式会社 | Chip-shaped electronic component |
| CN101448364A (en) * | 2007-11-26 | 2009-06-03 | 同欣电子工业股份有限公司 | Method for producing small-pore-diameter copper-plated through hole on ceramic substrate |
| CN201576518U (en) * | 2010-01-19 | 2010-09-08 | 南京萨特科技发展有限公司 | High power precise chip resistor |
| CN103943291A (en) * | 2014-02-21 | 2014-07-23 | 南京萨特科技发展有限公司 | Static suppressor with overcurrent protection functions, and manufacturing method thereof |
| CN105304326A (en) * | 2014-06-11 | 2016-02-03 | 阿维科斯公司 | Low noise capacitors |
| CN105899003A (en) * | 2015-11-06 | 2016-08-24 | 武汉光谷创元电子有限公司 | Single layer circuit board, multilayer circuit board and manufacture method for single layer circuit board and multilayer circuit board |
| CN106535502A (en) * | 2016-10-17 | 2017-03-22 | 奥士康精密电路（惠州）有限公司 | Electroplating method of high-aspect ratio circuit board |
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| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180907 |