CN1812004A - Method for producing multi-circuit element wafer with salient pole - Google Patents
Method for producing multi-circuit element wafer with salient pole Download PDFInfo
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- CN1812004A CN1812004A CN 200510002893 CN200510002893A CN1812004A CN 1812004 A CN1812004 A CN 1812004A CN 200510002893 CN200510002893 CN 200510002893 CN 200510002893 A CN200510002893 A CN 200510002893A CN 1812004 A CN1812004 A CN 1812004A
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Abstract
This invention relates to a manufacturing method for multiple circuit element wafers with project end electrodes, which forms an insulation layer covering the top, bottom surfaces and internal walls of a through hole, in which, the base board has many matrixes arrayed in matrixes with several parallel conduction blocks arrayed in gaps on the top surface, through holes through the up and down surfaces of the matrixes are set on the right and left ends of adjacent conduction blocks, then the base board is divided longitudinally into multiple strips and the right and left side faces of which are sputtered to form side electrodes then the strips are divided into independent matrixes to be plated to form end electrodes on their side electrodes.
Description
Technical field
The present invention relates to a kind of manufacture method of multicircuit element wafer, particularly relate to the manufacture method of a kind of tool protruding end electrode multicircuit element wafer.
Background technology
The multicircuit element wafer is to be set up in parallel a plurality of circuit elements, for example many resistance wafer, many electric capacity wafer in single wafer.These circuit elements do not electrically connect each other and have separately in order to connect two extraneous electrodes, make the multicircuit element wafer have a plurality of electrodes.
As Fig. 1 and Fig. 2, many resistance wafer was formed on the ceramic substrate 1 in the past.Ceramic substrate 1 planning has many vertical cut-off rules 11 and horizontal partition line 12, with the ceramic matrix 13 that separates into a plurality of arranged.Each ceramic matrix 13 upper surface is provided with the conductive area that multicomponent places both sides, and every group of conductive area is two top electrodes 131, and the resistive film 132 of two top electrodes 131 in the corresponding group of a plurality of bridge joint.In addition, previous methods more can run through on ceramic substrate 1 a plurality of perforation 133 are set, and each is bored a hole 133 is to be positioned at 131 of adjacent top electrodes, keeps a determining deviation to guarantee 131 of two adjacent top electrodes.Again, be formed with a plurality of bottom electrodes 131 ' at the lower surface of ceramic substrate 1, its position each top electrode 131 with each ceramic matrix 13 respectively is corresponding.
Then, as Fig. 3, on resistive film 132, form a protective layer 134.And then, as Fig. 4, earlier ceramic substrate 1 longitudinally cut-off rule 11 be divided into many, be stained with elargol in the two ends of each bar ceramic substrate 1 again, as Fig. 5, form a plurality of upper and lower electrode 131, side electrodes 135 of 131 ' of connecting with two sides.In being stained with the elargol process, the side of elargol except that between the upper and lower electrode 131 that is formed at ceramic matrix 13,131 ', more can the cover part upper and lower electrode 131,131 ' and the part wall of perforation 133 adjacent side face electrodes 135 on.
After this, after again each bar ceramic substrate 1 being divided into single ceramic matrix 13 along horizontal partition line 12, as Fig. 6 and Fig. 7, carry out and electroplate, form to cover upper and lower electrode 131,131 ' and the termination electrode 136 of side electrode 135, be used as connecting electrode to other electronic installation such as circuit board.
During general the plating, metal can deposit on conducting surface.Yet, as previously mentioned, many resistance wafer was to form side electrode 135 to be stained with elargol in the past, make and be stained with the elargol scope and can't do accurate effectively control, and can be formed on the part wall of perforation 133 adjacent side face electrodes 135, cause in termination electrode 136 electroplating processs, metal except that be deposited on upper and lower electrode 131,131 ' and side electrode 135, more can be deposited on the wall of perforation 133, make the shape of termination electrode 136 side direction to form similar mushroom head towards the extension of perforation 133 parts.So, termination electrode 136 also can be grown up on the wall of perforation 133, causes the spacing distance of 136 at abutting end electrode to dwindle, and in 136 transmission of two abutting end electrodes data cross-talk (cross talk) situation takes place easily, and can't operate as normal.Again, microminiaturization trend along with electronic component, the also inevitable volume microminiaturization of multicircuit element wafer such as many resistance wafer, make the volume of each member on the multicircuit element wafer dwindle thereupon, perforation 133 sizes that two end electrodes is 136 also are contracted to thereupon approaches insulation distance, refers to can not produce the insulation distance of cross-talk.Yet in termination electrode 136 forming processes of many resistance wafer, metal level can side direction extend towards perforation 133 parts again in the past, and limited perforation 133 spacings are dwindled again, cause the generation probability of defective products to improve again.
Summary of the invention
Therefore, this case inventor thinks and forms insulating barrier and change by sputtering way and form side electrode between upper and lower electrode in the perforation internal face, formation position with effective control side electrode, and then when guaranteeing that termination electrode is electroplated, distance between two end electrodes can not descend with the formation of termination electrode, to solve foregoing problems.
A purpose of the present invention is to provide a kind of manufacture method that improves the tool protruding end electrode multicircuit element wafer of product yield.
Another purpose of the present invention is to provide a kind of manufacture method that keeps the tool protruding end electrode multicircuit element wafer of two interelectrode distances.
A further object of the present invention is to provide a kind of manufacture method of effectively avoiding the tool protruding end electrode multicircuit element wafer of short circuit and cross-talk generation.
The manufacture method of tool of the present invention protruding end electrode multicircuit element wafer comprises following steps:
Step 1 a: substrate is provided, this substrate defines many x wires and many vertical lines to separate into a plurality of matrixes that are arranged, respectively the upper surface of this matrix also extends several conductive area in the right side column-spacingly by a left side, and respectively this matrix is provided with a perforation that runs through the upper and lower surface of this matrix respectively at the left and right two ends of the interval region in the two adjacent conductive area in this conductive area respectively, and these perforation more are positioned on this correspondence vertical line;
Step 2: the insulating barrier that forms upper surface, lower surface and these perforation internal faces of this substrate of covering;
Step 3: cut apart this substrate along these vertical lines and become a plurality of strip shape bodies;
Step 4: sputter does not form in the left and right side wall of this strip shape body on the residue wall of this insulating barrier, to form a plurality of side electrodes that connect the left and right end of corresponding conductive area;
Step 5: cut apart these strip shape bodies along these x wires and become these separate substrates; And
Step 6: electroplate these matrixes, on this side electrode respectively, to form a termination electrode.
The manufacture method of tool of the present invention protruding end electrode multicircuit element wafer, be to apply the negative pressure suction in this step 2 in the upper and lower surface printing insulation material of this substrate and respectively at opposed surface, make this insulation material overflow in the internal face of this perforation, to form this insulating barrier.
The manufacture method of tool of the present invention protruding end electrode multicircuit element wafer; in this step 1, respectively this conductive area conductive film and of containing top electrode that two compartment of terrains are formed at the left and right two ends of this matrix, this top electrode of bridge joint covers this conductive film and is close to the protective layer of the part of this conductive film with this top electrode.
The manufacture method of tool of the present invention protruding end electrode multicircuit element wafer, this vertical line are pre-indentations, and in this step 2, this insulating barrier covers this protective layer and makes this top electrode exposed in abutting connection with the part of this vertical line.
The manufacture method of tool of the present invention protruding end electrode multicircuit element wafer, in this step 1, to should more forming a plurality of bottom electrodes in the top electrode position, and this insulating barrier is to make this bottom electrode exposed in abutting connection with the part of this vertical line to this substrate in this substep two in lower surface.
The manufacture method of tool of the present invention protruding end electrode multicircuit element wafer, respectively this termination electrode is to be positioned on this corresponding side surface electrode, top electrode and the bottom electrode.
The manufacture method of tool of the present invention protruding end electrode multicircuit element wafer more comprises a step 7 that is positioned between this step 4 and this step 5, removes this insulating barrier.
The manufacture method of tool of the present invention protruding end electrode multicircuit element wafer, this insulating barrier is a glass paste, and this step 7 is soaked in this matrix respectively among the Mei Shakelong, and applies ultrasonic waves for cleaning and remove this insulating barrier.
The manufacture method of tool of the present invention protruding end electrode multicircuit element wafer, respectively this conductive film is a resistive film.
The manufacture method of tool of the present invention protruding end electrode multicircuit element wafer, this substrate is a ceramic substrate.
The manufacture method of tool of the present invention protruding end electrode multicircuit element wafer, the material of this metal film is any in nichrome, monel, titanium-tungsten and the copper in this step 4.
The manufacture method of tool of the present invention protruding end electrode multicircuit element wafer can reach the effect of keeping two adjacent interelectrode distances, and then can avoid cross-talk and short-circuit conditions to take place, to promote the yield of product.Simultaneously, can make product more can dwindle, to meet the trend of product microminiaturization.
Description of drawings
Fig. 1～Fig. 7 is a kind of manufacturing process schematic diagram of the wafer of many resistance in the past;
Fig. 8 is the flow chart of preferred embodiment of the manufacture method of tool of the present invention protruding end electrode multicircuit element wafer;
Fig. 9 is the partial schematic diagram of the substrate of present embodiment;
Figure 10 is the generalized section along the hatching 71-71 ' of Fig. 9;
Figure 11 is the schematic diagram that the upper surface of present embodiment substrate forms vertical insulation strip;
Figure 12 is the generalized section along the hatching 72-72 ' of Figure 11;
Figure 13 is the schematic diagram that the lower surface of present embodiment substrate forms down vertical insulation strip;
Figure 14 is the generalized section along the hatching 73-73 ' of Figure 13;
Figure 15 is the generalized section along the hatching 74-74 ' of Figure 13;
Figure 16 is the schematic diagram that the substrate of present embodiment is divided into strip shape body;
Figure 17 is the schematic diagram that the strip shape body of present embodiment piles up;
Figure 18 is that the left and right side of strip shape body of present embodiment is through the schematic diagram of sputter;
Figure 19 is the generalized section along the hatching 75-75 ' of Figure 18;
Figure 20 is the generalized section that removes in the present embodiment behind the insulating barrier;
Figure 21 is the schematic diagram that the strip shape body of present embodiment is divided into separate substrates;
Figure 22 is the schematic diagram of the matrix of this enforcement through the plating termination electrode;
Figure 23 is the generalized section along the hatching 76-76 ' of Figure 22.
Embodiment
For avoiding problem in the past, the manufacture method of tool of the present invention protruding end electrode multicircuit element wafer is to cover the internal face of perforation with the insulation material earlier, with when sputter forms side electrode, two interelectrode perforation walls are not exposed, plated metal from can't be the time in follow-up plating termination electrode, and then can guarantee interelectrode insulation distance.
Hereinafter, cooperate Fig. 8 that the method for making the multicircuit element wafer in the present embodiment is described.
At first, in step 21, provide a substrate 3.As Fig. 9 and Figure 10, the upper surface of substrate 3 extends many vertically pre-indentations 31 (referring to vertical line) and many laterally pre-indentations 32 (referring to x wire) with vertically pre-indentation 31 quadratures, to be separated into a plurality of matrixes 4 that are arranged.Again, for ease of dividing cutting board 3 one-tenth separate substrates in the successive process, the pre-indentation the 31, the 32nd of present embodiment forms a V-type indentation in substrate 3, but also can be the indentation of other shape, also can as flat bottomed recess.Yet, have the knack of this skill person when knowing, can omit pre-indentation 31,32 and in successive process, directly divide cutting board 3.
The upper surface of each matrix 4 is laid side by side a plurality of conductive area, and the conductive film 42 and that each conductive area contains top electrode 41 that two compartment of terrains are arranged in the upper surface two ends of matrix 4, a bridge joint two top electrodes 41 covers these conductive films 42 and is close to the protective layer 43 of the part of corresponding conductive film 42 with these top electrodes 41.Substrate 3 is ceramic substrates in this example, and conductive film 42 is resistive films.Again, the lower surface of each matrix 4 and top electrode 41 relative positions also are formed with bottom electrode 44, and the multicircuit element wafer can surface adhering (SMT) mode be connected to other electronic installation.Moreover, running through being provided with a plurality of perforation 33 on the ceramic substrate 3, each is bored a hole and 33 is positioned at 41 of two adjacent top electrodes.In this example protective layer 43 act as the insulation and anti-welding, its material is epoxy resin (Epoxy), as Epoxy Molding Compounds (Fused Silica).
Thereafter, before sputter forms side electrode, prior to forming the insulating barrier of upper surface, lower surface and perforation 33 internal faces of a covered substrate 3 in the step 22.
Specifically; as Figure 11 and Figure 12; prior to the upper surface of substrate 3 with many vertical insulation strip 45 of press printing; vertical insulation strip 45 is the parts that cover contiguous protective layer 43 in protection layer corresponding 43 and the top electrode 41 in two adjacent 31 extensions of vertically pre-indentations on each; still make these top electrodes 41 exposed away from the part of conductive film 42, promptly each on vertical side of vertical insulation strip 45 with vertically pre-indentation 31 maintenances, one segment distance but still covering is respectively bored a hole the part of 33 contiguous protective layer 43.The material that goes up vertical insulation strip 45 in the present embodiment is that glass paste and its print thickness are about 60 μ m.When glass paste prints to the substrate 3, glass paste can be near liquid, and present embodiment is placed in a suction vacuum table to substrate 3 earlier, inhales vacuum from top to bottom, makes the glass paste overflow to boring a hole 33 internal face, then carries out drying procedure through stove again.
Thereafter; as Figure 13 and Figure 14; lower surface in substrate 3 descends vertical insulation strip 46 with many of press printings again; the position of the vertical insulation strip 46 of each time is relative with corresponding last vertical insulation strip 45 respectively; and down vertical side of vertical insulation strip 46 also keeps certain distances with vertically pre-indentation 31 and covers the part of the 33 contiguous protective layers 43 of respectively boring a hole, with the part that covers each bottom electrode 44 adjacent central and make its part away from central authorities exposed.Then, the material of following vertical insulation strip 46 of present embodiment is a glass paste also, and during manufacturing, vacuum is inhaled after substrate 3 lower surfaces are put the suction vacuum table up from top to bottom by elder generation, makes the glass paste overflow to 33 internal faces of boring a hole, and carries out drying procedure through stove again.So, as Figure 15, each 33 internal face of boring a hole is covered with glass paste and is the extension of insulation strip 45,46.Thereby insulating barrier has the oven dry glass paste of going up on vertical insulation strip 45, down vertical insulation strip 46 and perforation 33 internal faces.
After forming insulating barrier, execution in step 23, as Figure 16, longitudinally pre-earlier 3 one-tenth many strip shape bodies 34 of 31 fens cutting boards of indentation thereafter, as Figure 17, are piling up these strip shape bodies 34, and the left and right side that makes each strip shape body 34 is outwardly.
Secondly, in step 24, jet-plating metallization is carried out in left and right side in each strip shape body 34, so that the exposed wall plated metal of insulating barrier not to be arranged in each strip shape body 34, thereby as Figure 18 and Figure 19, side electrode 47 can be formed at that exposed wall (side wall surface that refers to 33 of two adjacent perforation) in the left and right wall of strip shape body 34 is gone up, on the exposed part of the exposed part of top electrode 41 and bottom electrode 44, be electrically conducted supreme, bottom electrode 41,44 to guarantee side electrode 47.In this example, side electrode 47 is about 1000 and is about 5000 in the thickness of the upper and lower electrode part 41,44 of substrate 3 in the thickness of the left and right wall of strip shape body 34, the material that reaches sputter is a nichrome, but also can be in monel, titanium-tungsten and the copper any.
After side electrode 47 forms, in step 25,, remove the insulating barrier (partial insulative layer that refers to upper and lower vertical insulation strip 45,46 and each 33 internal face of boring a hole) that no longer needs as Figure 20.In the present embodiment, be soaked in strip shape body 34 among the Mei Shakelong and apply ultrasonic wave and remove insulating barrier.
And then, in step 26, cutting apart 34 one-tenth separate substrates 4 of each strip shape body as Figure 21 along laterally pre-score 32.This moment, the internal face of the perforation 33 that two adjacent side electrodes of each matrix 4 left and right side are 47 because of the covering of insulating barrier in the sputter step 24 and sputter after step 25 remove the step of insulating barrier, on it from not having because of forming the metal film that side electrode step 24 is deposited.
Thereby last, in step 27, electroplating each matrix 4 such as the barrel plating mode, metal can be deposited on the exposed part of side electrode 47, top electrode 41, bottom electrode 44 of each matrix 4, to form termination electrode 48.So, termination electrode 48 in electroplating process except that plated metal on upper and lower electrode 41,44, only can be on side electrode 47 plated metal, perforation 33 internal faces that make 47 at two sides electrode are exposed and plated metal not causes termination electrode 48 to become the protruding end electrode.In this example in termination electrode 48 electroplating processs, first electronickelling re-plating tin, and be two-layer metal structure.
According to preceding described, the present invention is earlier with on the insulating barrier covered substrate 3, the internal face of lower surface and each perforation 33, impose sputter and form side electrode 47, then again insulating barrier is removed, to guarantee that the wall that only staggers with perforation 33 positions forms metal film in matrix 4 left and right sides walls, formation position with effective restriction side electrode 47, and then perforation 33 walls of guaranteeing 47 at two sides electrode do not have any metal, thereby plating termination electrode 48 certainly can not be in the wall plated metal of 47 at two sides electrode, to guarantee that termination electrode 48 can vertically (not refer to the direction of cut-off rule longitudinally) when growing up and develop, make the distance of 48 at two abutting end electrodes can not change with the formation of termination electrode 48, to reach the effect that to keep two adjacent interelectrode distances, and then can avoid cross-talk and short-circuit conditions to take place, to promote the yield of product.Simultaneously,, when design, can make between the two spacing distance more near insulation distance, even equal insulation distance, make product more can dwindle, to meet the trend of product microminiaturization because the spacing distance of 48 at two abutting end electrodes can not dwindle with manufacture process.
Moreover, though previous embodiment illustrate to make a plurality of multicircuit element wafer flow processs simultaneously, yet have the knack of this skill person when knowing that the present invention also can only make single multicircuit element wafer, should not be subject to present embodiment and disclose.
Claims (11)
1, the manufacture method of a kind of tool protruding end electrode multicircuit element wafer is characterized in that the method includes the steps of:
Step 1 a: substrate is provided, this substrate defines many x wires and many vertical lines to separate into a plurality of matrixes that are arranged, respectively the upper surface of this matrix also extends several conductive area in the right side column-spacingly by a left side, and respectively this matrix is provided with a perforation that runs through this upper and lower surface of matrix respectively at the left and right two ends of interval region of two adjacent conductive area in this conductive area respectively, and this perforation more is positioned on this correspondence vertical line;
Step 2: the insulating barrier that forms upper surface, lower surface and this perforation internal face of this substrate of covering;
Step 3: cut apart this substrate along this vertical line and become a plurality of strip shape bodies;
Step 4: sputter does not form in the left and right side wall of this strip shape body on the residue wall of this insulating barrier, to form a plurality of side electrodes that connect the left and right end of corresponding conductive area;
Step 5: cut apart this strip shape body along this x wire and become this separate substrates; And
Step 6: electroplate this matrix, on this side electrode respectively, to form a termination electrode.
2, the manufacture method of tool as claimed in claim 1 protruding end electrode multicircuit element wafer is characterized in that:
Be to apply the negative pressure suction in this step 2, make this insulation material overflow in the internal face of this perforation, to form this insulating barrier in the upper and lower surface printing insulation material of this substrate and respectively at opposed surface.
3, the manufacture method of tool as claimed in claim 2 protruding end electrode multicircuit element wafer is characterized in that:
In this step 1, respectively this conductive area conductive film and of containing top electrode that two compartment of terrains are formed at the left and right two ends of this matrix, this top electrode of bridge joint covers this conductive film and is close to the protective layer of the part of this conductive film with this top electrode.
4, the manufacture method of tool as claimed in claim 3 protruding end electrode multicircuit element wafer is characterized in that:
This vertical line is a pre-indentation, and in this step 2, this insulating barrier covers this protective layer and makes this top electrode exposed in abutting connection with the part of this vertical line.
5, the manufacture method of tool as claimed in claim 4 protruding end electrode multicircuit element wafer is characterized in that:
In this step 1, to should more forming a plurality of bottom electrodes in the top electrode position, and this insulating barrier is to make this bottom electrode exposed in abutting connection with the part of this vertical line to this substrate in this substep two in lower surface.
6, the manufacture method of tool as claimed in claim 5 protruding end electrode multicircuit element wafer is characterized in that:
Respectively this termination electrode is to be positioned on this corresponding side surface electrode, top electrode and the bottom electrode.
7, the manufacture method of tool as claimed in claim 3 protruding end electrode multicircuit element wafer is characterized in that this method more comprises:
One is positioned at the step 7 between this step 4 and this step 5, removes this insulating barrier.
8, the manufacture method of tool as claimed in claim 7 protruding end electrode multicircuit element wafer is characterized in that:
This insulating barrier is a glass paste, and this step 7 is soaked in this matrix respectively among the Mei Shakelong, and applies ultrasonic waves for cleaning and remove this insulating barrier.
9, the manufacture method of tool as claimed in claim 3 protruding end electrode multicircuit element wafer is characterized in that:
Respectively this conductive film is a resistive film.
10, the manufacture method of tool as claimed in claim 1 protruding end electrode multicircuit element wafer is characterized in that:
This substrate is a ceramic substrate.
11, the manufacture method of tool as claimed in claim 1 protruding end electrode multicircuit element wafer, it is characterized in that: the material of this metal film is any in nichrome, monel, titanium-tungsten and the copper in this step 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100028934A CN100505114C (en) | 2005-01-28 | 2005-01-28 | Method for producing multi-circuit element wafer with salient pole |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100028934A CN100505114C (en) | 2005-01-28 | 2005-01-28 | Method for producing multi-circuit element wafer with salient pole |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1812004A true CN1812004A (en) | 2006-08-02 |
| CN100505114C CN100505114C (en) | 2009-06-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100028934A Expired - Fee Related CN100505114C (en) | 2005-01-28 | 2005-01-28 | Method for producing multi-circuit element wafer with salient pole |
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| CN (1) | CN100505114C (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102873791A (en) * | 2012-10-11 | 2013-01-16 | 东莞劲胜精密组件股份有限公司 | Plastic piece and steel sheet separation process |
| CN103579010A (en) * | 2012-08-08 | 2014-02-12 | 深南电路有限公司 | Method for manufacturing packaging product with metalized side wall |
| CN108513456A (en) * | 2018-03-22 | 2018-09-07 | 广东风华高新科技股份有限公司 | Substrate through holes technique |
-
2005
- 2005-01-28 CN CNB2005100028934A patent/CN100505114C/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103579010A (en) * | 2012-08-08 | 2014-02-12 | 深南电路有限公司 | Method for manufacturing packaging product with metalized side wall |
| CN103579010B (en) * | 2012-08-08 | 2016-12-21 | 深南电路有限公司 | A kind of manufacture method of sidewall metallization encapsulating products |
| CN102873791A (en) * | 2012-10-11 | 2013-01-16 | 东莞劲胜精密组件股份有限公司 | Plastic piece and steel sheet separation process |
| CN108513456A (en) * | 2018-03-22 | 2018-09-07 | 广东风华高新科技股份有限公司 | Substrate through holes technique |
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| Publication number | Publication date |
|---|---|
| CN100505114C (en) | 2009-06-24 |
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Granted publication date: 20090624 Termination date: 20140128 |