CN108511621A - A kind of display panel and its manufacturing method - Google Patents
A kind of display panel and its manufacturing method Download PDFInfo
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- CN108511621A CN108511621A CN201810189580.1A CN201810189580A CN108511621A CN 108511621 A CN108511621 A CN 108511621A CN 201810189580 A CN201810189580 A CN 201810189580A CN 108511621 A CN108511621 A CN 108511621A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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Abstract
A kind of display panel of embodiment of the disclosure offer and its manufacturing method.The display panel includes:Substrate;Thin film transistor (TFT), patterning flatness layer and the display device layer being sequentially formed on substrate, display device layer includes the pixel confining layer for limiting multiple pixel regions, display device is provided in each pixel region, each display device includes the second electrode on the opposite side of the first electrode close to the side of the thin film transistor (TFT), middle layer and thin film transistor (TFT);And thin-film encapsulation layer, for encapsulating multiple display devices, wherein the thin-film encapsulation layer setting is on the second electrode, inorganic barrier layer is provided between pixel defining layer and each display device, inorganic barrier layer is configured as stopping that the aqueous vapor from pixel defining layer invades the display device.The display panel can realize the efficient water oxygen barriering effect of pixel scale, take into account good resolution;Good flexibility can also be kept while ensuring that water oxygen hinders effect and good resolution.
Description
Technical field
This disclosure relates to a kind of display panel, in particular to a kind of display panel and its encapsulation and manufacturing method.
Background technology
With the rapid development of display technology, various frivolous panel display boards are had been incorporated into.Device lifetime is such as
The important consideration index of the industrialization of display panels such as LCD, Organic Light Emitting Diode (OLED), and it is by steam and oxygen
Adverse effect.If steam and oxygen can be obstructed effectively, the generation of stain can be inhibited, to substantially extend the longevity of display panel
Life, and this depends on effective encapsulation to device.
In addition, flexible display panels are also developed and increasingly attract attention in recent years.
Existing display panel may include thin film encapsulation layer, to stop the infiltration from external moisture, oxygen etc..Traditional
Thin film encapsulation layer has the construction that inorganic layer and organic layer are alternately stacked.However, usually thin film encapsulation layer and display panel is whole
Ground is formed, for example, thin film encapsulation layer can by substrate buffer layer, thin film transistor (TFT), patterning flatness layer and such as LCD and
Multiple display devices of OLED (pay attention in being encapsulated in together:Technical term " display device " mentioned in this article indicates to correspond to
The display device of single sub-pixel), this whole encapsulating can be such that the flexible of display panel deteriorates, and thin film encapsulation layer can be
The shape of display panel is damaged when changing, in addition, the material of the thin film encapsulation layer of consumption is also more.
Thin film encapsulation layer is usually to entire panel in the prior art, including the layer where substrate and above-mentioned component thereon into
Row one encapsulating, and usually not to individual monitor part and its corresponding buffer layer, thin film transistor (TFT) and patterning flatness layer into
Row is separately packaged, because this can result in the need for larger envelope space so that the resolution of display panel deteriorates, and can also increase aobvious
Show the size of panel.And resolution and size are also the important consideration index of the application of display panel.
Invention content
Therefore, it is necessary to a kind of display panels, can realize the efficient water oxygen barriering effect of pixel scale, take into account good
Resolution.Such a display panel is also needed to, ensuring water oxygen can hinder effect and while good resolution,
Keep the good flexibility of display panel.
For the above-mentioned technical problems in the prior art, first scheme according to the present invention, the embodiment of the present invention
A kind of display panel is provided, the display panel includes:Substrate;Sequentially form thin film transistor (TFT), figure on the substrate
Case flatness layer and display device layer, the display device layer includes pixel confining layer, and the pixel confining layer limits multiple pictures
Plain region, display device is provided in each pixel region, and each display device includes close to the side of the thin film transistor (TFT)
First electrode, middle layer and the thin film transistor (TFT) opposite side on second electrode;And thin-film encapsulation layer, for encapsulating
Multiple display devices, wherein the thin-film encapsulation layer is arranged in the second electrode, in the pixel defining layer and respectively
Inorganic barrier layer is provided between a display device, the inorganic barrier layer is configured as stopping from the pixel defining layer
Aqueous vapor invades the display device.
Optionally, the substrate includes showing supporting part and the stretchable bridge part for that will show supporting part interconnection,
The display supporting part is configured as sequentially forming the thin film transistor (TFT), patterning flatness layer and display device layer on it.
Optionally, it is formed with discontinuous buffer layer on the substrate, the thin film transistor (TFT) is formed in the buffering
On layer.
Optionally, the thin-film encapsulation layer independently encapsulates the second electrode of the display device in each pixel region.
Optionally, the thin-film encapsulation layer encapsulates the second electrode of multiple display devices therein across multiple pixel regions.
Optionally, the display device includes organic light emitting diode device.
Optionally, the adjacent inorganic barrier layer is continuously formed.
Optionally, what the inorganic barrier layer at least coated the middle layer and the second electrode is exposed to the pixel
Define the surface of layer.
Alternative plan according to the present invention, the embodiment of the present invention also provide a kind of manufacturing method of display panel, including:
Buffer layer is formed on flexible substrates;
Thin film transistor (TFT) is formed on the buffer layer;
Patterning flatness layer is formed on the thin film transistor (TFT);
The display device in each pixel region of pixel confining layer and its restriction is formed on the patterning flatness layer,
Each display device includes on the opposite side of the first electrode close to the side of thin film transistor (TFT), middle layer and thin film transistor (TFT)
Second electrode;And
Thin-film encapsulation layer is formed in the second electrode of the display device, which is characterized in that
The step of formation buffer layer includes on flexible substrates:Form the buffering in a discontinuous manner on flexible substrates
Layer, and
Include in the step of forming pixel confining layer and display device on the patterning flatness layer:
The first electrode of each display device is formed on the patterning flatness layer;
The coating photoresist layer on the patterning flatness layer is provided with through-hole by exposure imaging formation
Pixel confining layer, and the first electrode is made to be located at the bottom of the through-hole;
Nothing is formed in the side wall of the through-hole of the pixel confining layer and the upper surface of the pixel confining layer
Machine barrier layer;Then
Middle layer and the second electrode are sequentially formed on the first electrode.
Optionally, in the step of forming thin-film encapsulation layer in the second electrode of the display device, the thin-film package
In the corresponding second electrode of through-hole that is independently formed in the pixel confining layer of layer or the thin-film encapsulation layer across
Multiple through-holes in the pixel confining layer are formed in multiple second electrodes corresponding to it.
Using the display panel and its manufacturing method of multiple embodiments of the disclosure, following Advantageous effect can be realized
Fruit:By the way that inorganic barrier layer is arranged in the pixel defining layer and corresponding between the display device of single sub-pixel, can hinder
The aqueous vapor for keeping off (such as pixel defining layer) from below invades the display device, while by thin-film encapsulation layer to the display device
Second electrode encapsulation, can stop that the aqueous vapor come from above invades the display device, to realize to the display device
Effective water oxygen of pixel scale (rank of the rank of one or several sub-pixels or one or several pixels) obstructs, inorganic
The configuration of barrier layer and thin-film encapsulation layer can ensure good resolution, and make the compact dimensions of display panel;By upper
The water oxygen barrier encapsulating for stating pixel scale, coordinates the discontinuous buffer layer for bearing film transistor formed on substrate,
The extension for making it possible to adapt to substrate stretches, the structure without destroying encapsulating effect and various elements and functional layer.
Description of the drawings
In the attached drawing being not drawn necessarily to scale, identical reference numeral can be similar described in different views
Component.Same reference numerals with letter suffix or different letter suffix can indicate the different instances of similar component.Attached drawing
Generally through citing rather than the mode of limitation shows various embodiments, and is reinstated with specification and claims one
It is illustrated in the disclosed embodiments.In due course, make to be referred to identical reference in all the appended drawings same
One or similar part.Such embodiment is limit or exclusive that is illustrative, and being not intended as the present apparatus or method
Embodiment.
Fig. 1 is the section according to the part corresponding to single sub-pixel of the display panel of first embodiment of the present disclosure
Figure;
Fig. 2 (a) is according to the schematic diagram of the substrate of the display panel of second embodiment of the present disclosure, and the substrate includes aobvious
Show supporting part and the stretchable bridge part for that will show supporting part interconnection;
Fig. 2 (b) is the expansion diagram of the stretchable bridge part in substrate shown in Fig. 2 (a), wherein the bridge part
And it is non-stretched;
Fig. 2 (c) is diagram of the stretchable bridge part in the state of stretching 50% shown in Fig. 2 (b);
Fig. 2 (d) is diagram of the stretchable bridge part in the state of stretching 150% shown in Fig. 2 (b);
Fig. 3 shows the partial section view of the display panel according to third embodiment of the present disclosure, wherein each pixel region
In display device independently encapsulated by thin-film encapsulation layer;
Fig. 4 shows the partial section view of the display panel according to fourth embodiment of the present disclosure, wherein multiple pixel regions
In multiple display devices encapsulated together across multiple pixel regions by thin-film encapsulation layer;
Fig. 5 shows a kind of flow chart of the manufacturing method of display panel according to fifth embodiment of the present disclosure.
Specific implementation mode
To make those skilled in the art be better understood from technical scheme of the present invention, below in conjunction with the accompanying drawings and specific embodiment party
Formula elaborates to the present invention.Embodiment of the disclosure work is further retouched in detail in the following with reference to the drawings and specific embodiments
It states, but not as the restriction to the disclosure.
" first ", " second " and the similar word used in the disclosure is not offered as any sequence, quantity or again
The property wanted, and be used only to distinguish different parts.The similar word such as " comprising " or "comprising" means the element before the word
Cover the element enumerated after the word, it is not excluded that be also covered by the possibility of other element."upper", "lower", "left", "right" etc. are only used
In indicating relative position relation, after the absolute position for being described object changes, then the relative position relation may also be correspondingly
Change.
In the disclosure, when being described to certain device between the first device and the second device, in the certain device
There may be devices between two parties between the first device or the second device, can not also there is device between two parties.When being described to specific device
When part connects other devices, which can be directly connected to the other devices without device between two parties, can also
It is not directly connected to the other devices and there is device between two parties.
All terms (including technical term or scientific terminology) that the disclosure uses are common with disclosure fields
The meaning that technical staff understands is identical, unless otherwise specifically defined.It is also understood that in term such as defined in the general dictionary
The meaning consistent with their meanings in the context of the relevant technologies should be interpreted as having, without application idealization or
The meaning of extremely formalization explains, unless being clearly defined herein.
Technology, method and apparatus known to person of ordinary skill in the relevant may be not discussed in detail, but suitable
In the case of, the technology, method and apparatus should be considered as part of specification.
Fig. 1 is the section according to the part corresponding to single sub-pixel of the display panel of first embodiment of the present disclosure
Figure.Technical term " display device " mentioned in this article indicates the display device corresponding to single sub-pixel, such as display device
Can be emit feux rouges, blue and green light or white light an organic luminescent device 300, thus can form a sub-pixel, it is several
Sub-pixel, for example, respectively emit feux rouges, blue and green light three organic luminescent devices 300, a pixel can be collectively formed.Such as
Shown in Fig. 1, the display panel includes:Substrate 101;Thin film transistor (TFT) 200, the patterning sequentially formed on the substrate is flat
Smooth layer 209 and display device layer, the display device layer include in pixel confining layer 304 and its each pixel region limited
Display device 300, each display device 300 are included in the first electrode 301 of 200 side of thin film transistor (TFT), middle layer 300 and thin
Second electrode 303 on 200 opposite side of film transistor;And thin-film encapsulation layer 400, encapsulate the multiple display device 300
Second electrode 303, inorganic barrier layer 305, institute are provided between the pixel defining layer 304 and each display device 300
Inorganic barrier layer 305 is stated to be configured as blocking such as the aqueous vapor of the pixel defining layer 304 invades the display from below
Part 300.
In some embodiments, the substrate 101 can be made of a variety of materials.For example, substrate 101 can by such as glass,
Any type material of metal or organic material is made.For example, substrate 101 can pass through the design of structure and/or the choosing of material
It selects and has flexibility, to help to realize the tensility of display panel.For example, substrate 101 may include flexible material, it is all
The material that such as can be easily bent, fold or batch.The soft of such as ultra-thin glass, metal or plastics can be used in substrate 100 flexible
Property material.When substrate 100 includes plastics, polyimides (PI) material etc. can be used in substrate 100.
Fig. 2 (a) is according to the schematic diagram of the substrate 101 of the display panel of second embodiment of the present disclosure, the substrate packet
The stretchable bridge part 103 for including display supporting part 102 and being interconnected for that will show supporting part 102, wherein the display carrying
Portion 102 is configured as carrying and shows relevant component, including buffer layer 202, thin film transistor (TFT) 200 and display device thereon
300, pixel confining layer 304 etc..The bridge part 103 has flexible, strain when being stretched in order to provide display panel, and as possible
Effect of the stress to the various relevant components of display is reduced, and then avoids the destruction to it;Optionally, adjacent display supporting part
Flexible wiring, such as the wiring of waveform shown in Fig. 2 (b) can also be equipped between the component carried on 102, wherein should
Bridge part 103 is simultaneously non-stretched.As shown in Fig. 2 (c), stretchable bridge part is stretched 50%, meanwhile, the wiring carried thereon
Waveform is also opened by respective extension;As shown in Fig. 2 (d), stretchable bridge part is stretched 150%, meanwhile, the wiring carried thereon
Waveform also opened by respective extension.
In some embodiments, buffer layer 202 is formed on the substrate 101.For example, buffer layer 202 can be by inorganic material (example
Such as, silica, silicon nitride, silicon oxynitride, aluminium oxide, aluminium nitride, titanium oxide and titanium nitride), organic material is (for example, polyamides is sub-
Amine, polyester and acrylic) or stack inorganic material and organic material formed.For example, buffer layer 202 can be formed in display
On supporting part 102, it can also be formed in display supporting part 102 and 103 the two of bridge part.Optionally, buffer layer 202 can be with shape
At on display supporting part 102, the adverse effect of the strain to bridge part 103 is thus reduced.Optionally, buffer layer 202 can be with
It is formed in a discontinuous manner on display supporting part 102, as long as it is gentle to provide carrying enough for thin film transistor (TFT) 200 thereon
Punching, such as shown in Figure 1, buffer layer 202 can be formed in corresponding to for the upper surface of substrate 101 in a discontinuous manner
, so can be when display panel stretches on the part of thin film transistor (TFT) 200 so that deformation be happened at its disconnection distance it
Between, and keep thin film transistor (TFT) 200 thereon and display device 300 indeformable, to reduce the damage stretched to the two,
The adverse effect of the strain to bridge part 103 can also be further reduced.
Thin film transistor (TFT) 200 includes active layer 203, gate electrode 205, source electrode 207 and drain electrode 208.Fig. 1 has been instantiated
The top gate type thin film that active layer 203, gate electrode 205, source electrode 207 and drain electrode 208 are formed with the order of order stated is brilliant
The case where body pipe.However, the present embodiment is without being limited thereto, various types of films that such as bottom gate thin film transistor can be used are brilliant
Body pipe.
As shown in Figure 1, gate insulating layer 204 may be formed on active layer 203.For example, gate insulating layer 204 can be by such as
The inorganic material of silica and/or silicon nitride is formed with multilayered structure or single layer structure.Gate insulating layer 204 makes active layer 203
It insulate with gate electrode 205.
Gate electrode 205 can be formed on gate insulating layer 204, with stacked with active layer 203, and can connect application switch
The grid line of signal.
Interlayer dielectric layer 206 may be formed on gate electrode 205 and gate insulating layer 204, be configured as making 207 He of source electrode
Drain electrode 208 insulate with gate electrode 205.Interlayer dielectric layer 206 can be formed by inorganic material with multilayered structure or single layer structure.Example
Such as, inorganic material can be metal oxide or metal nitride.In detail, inorganic material may include silica, silicon nitride, nitrogen
Silica, aluminium oxide, titanium oxide, tantalum oxide, zirconium oxide etc..In some embodiments, interlayer dielectric layer 206 can be by organic
The single layer that material is formed, or can be the multilayered structure for including multiple organic material layers.Organic material may include such as poly- first
The commercial polymer of base methyl acrylate (pMMA) or polystyrene (PS), the polymer derivant with phenol group, third
Alkene acyl Type of Collective object, acid imide polymer, acryloyl ether polymer, acylamide polymer, fluorine-based polymer, paraxylene
Type of Collective object, vinyl alcohol polymer or their mixture etc..Optionally, interlayer dielectric layer 206 can be the inorganic of stacking
Insulating layer and organic insulator.
In some embodiments, buffer layer 202, gate insulating layer 204 and 206 three of interlayer dielectric layer function together as display
The lower section water oxygen barrier layer of device 300, which can be used different materials, for example, by using different inorganic material, Huo Zhejiao
Inorganic and organic materials are alternately used, the defect to reduce inorganic layer replicates, and forms the dislocation of the defects of multilayered structure so that
Water oxygen seepage distance is significantly increased, and infiltration rate significantly reduces.
Source electrode 207 and drain electrode 208 are formed on interlayer dielectric layer 206, in gate insulating layer 204 and interlayer dielectric layer
The through-hole of connection is provided in 206, to allow source electrode 207 and drain electrode 208 to contact active layer 203 via it.
Patterning flatness layer 209 is formed usually on thin film transistor (TFT) 200, to prevent the display device arranged thereon 300
Property is damaged because of uneven surface.Hole can be opened in patterning flatness layer 209, so as to the first electrode 301 of display device 300
Corresponding one be electrically connected to via it in source electrode 207 and drain electrode 208.
The display device 300 can be various luminescent devices, including but not limited to organic luminescent device, liquid crystal display
Part etc..
For by taking display device 300 is organic light emission (OLED) device as an example, which includes close to film
First electrode 301, middle layer 302 and the second electrode on the opposite side of thin film transistor (TFT) 200 of the side of transistor 200
303.When using just OLED device is set, first electrode 301 is anode, and second electrode 303 is cathode;And when using inversion OLED
When device, first electrode 301 is cathode, and second electrode 303 is anode.The middle layer 302 includes luminescent layer, and optionally
Including functional layers such as electron injecting layer, electron transfer layer, hole injection layer and hole transmission layers, this will not be repeated here.
In some embodiments, using OLED device is just set, anode 301 is located at close to the side of thin film transistor (TFT) 200, can
The water oxygen isolation preferable material of stability can be used in selection of land, anode, such as Ag, ITO, IZO, ZnO etc., anode itself can as a result,
The water oxygen barrier layer of lower section as the OLED device.
In some embodiments, stacked pixel confining layers 304, the picture in first electrode 301 and patterning flatness layer 209
Through-hole can be provided in plain confining layers 304 for limiting each pixel region, for accommodating each display device 300.Such as institute in Fig. 1
Show, as an example, can be provided with the through-hole of upside-down trapezoid in pixel confining layer 304, first electrode 301 is arranged in its bottom.
The inorganic resistance that can be arranged in many ways between the pixel defining layer 304 and each display device 300
Barrier 305.
For example, in the case that first electrode 301 itself can be used as water oxygen barrier layer, the inorganic barrier layer 305 to
The surface for being exposed to the pixel defining layer 304 for coating the middle layer 302 and the second electrode 303 less, thus, it is possible to
Fully aqueous vapor of the blocking from the pixel defining layer 304 invades the display device 300.For example, in pixel confining layer 304
In the case of the through-hole for being provided with upside-down trapezoid, it can be waited for along the side wall and upper wall in hole above the first electrode 301 of its bottom
It arranges on the part of second electrode 303 and forms inorganic barrier layer 305.
For another example in the case that first electrode 301 itself is not used as water oxygen barrier layer, the inorganic barrier layer 305
In addition to the foregoing, the exposed surface of cladding first electrode 301 is also needed, such as is exposed to pixel defining layer 304 and patterns flat
The surface of smooth layer 209, to ensure the water oxygen barriering effect for the lower section of entire OLED device 300.
Optionally, adjacent inorganic barrier layer 305 can be continuously formed, and thus, it is possible to simplification to be used to form inorganic resistance
The technique of barrier 305.
As shown in fig. 1, thin-film encapsulation layer 400 is coated in the second electrode 303 of each OLED device 300, it is right as a result,
Each OLED device 300 is respectively equipped with the water oxygen barrier layer up and down including thin-film encapsulation layer 400 and inorganic barrier layer 305, to
Realize the other targetedly water oxygen barrier of as low as sub-pixel-level.Even if water oxygen is via discontinuously arranged buffer layer 202, grid
The gap of insulating layer 204 and interlayer dielectric layer 206 intrusion patterning flatness layer 209 and pixel confining layer 304, this sub-pixel level
Other water oxygen barrier can still ensure the sufficient water oxygen barriering effect to each OLED device 300.
Only act on OLED device in view of the upper and lower water oxygen barrier layer, can while ensuring water oxygen barriering effect,
The spacing between sub-pixel (pixel) is effectively reduced, to realize the high-res of display panel, and makes the structure of display panel
It is compact.
Various ways may be used to be sealed to the second electrode 303 of each OLED device 300 with thin-film encapsulation layer 400
Dress.For example, as shown in figure 3, the display device 300 in each pixel region can independently be encapsulated by thin-film encapsulation layer 400.It can
Selection of land, as shown in figure 4, multiple display devices 300 in multiple pixel regions can be by thin-film encapsulation layer 400 across multiple pixel regions
Domain encapsulates together.In this way, the flexible encapsulation of various pixel scales can be realized according to demand, especially have strictly to display panel
In the case that size limits, the flexible encapsulation of this pixel scale can adapt to the demand of the various sizes of display panel.In addition,
The encapsulation of this pixel scale is less susceptible to because thin-film encapsulation layer 400 is arranged on the scale of pixel scale because of display panel
It stretches and is damaged, and smaller is hindered for the stretching of display panel, contribute to the tensility for improving display panel.
It is illustrated above using OLED device as display device 300 as example, in the variation example of the disclosure, this is aobvious
Show that device 300 can also use LCD display part, above-mentioned structure shown in figure that need to be adjusted correspondingly, for example, the first electricity
Pole 301 is shared electrode, and second electrode 303 is pixel electrode, and middle layer 302 includes liquid crystal layer, and thin film transistor (TFT) 200 then needs
Lattice structure is formed, those skilled in the art may be implemented, to the adjustment of shown structure, not go to live in the household of one's in-laws on getting married herein based on guidance above
It states.In the case of using different display devices 300, the advantageous effects in embodiments described above can still be realized,
This will not be repeated here.
Fig. 5 shows a kind of flow chart of the manufacturing method of display panel according to fifth embodiment of the present disclosure.Such as Fig. 5 institutes
Show, the manufacturing method of the display panel includes the following steps.
In step 501, buffer layer 202 is formed in a discontinuous manner on flexible base board 101.
In step 502, thin film transistor (TFT) 200 is formed on the buffer layer 202.
In step 503, patterning flatness layer 209 is formed on the thin film transistor (TFT) 200.In step 504, in the figure
The display device 300, Ge Gexian in each pixel region of pixel confining layer 304 and its restriction is formed on case flatness layer 209
Show that device 300 includes first electrode 301, middle layer 302 and the thin film transistor (TFT) 200 close to the side of thin film transistor (TFT) 200
Second electrode 302 on opposite side.
Particularly, in step 503, each display device 300 is formed on the patterning flatness layer 209 first
The first electrode 301.It is anode as example using first electrode 301.Optionally, when the first electrode 301 uses ITO materials
When material, it can be formed by carrying out patterned process to the substrate 101 with transparent ITO layer.For another example working as first electrode
When 301 use metal material, it can be formed by technologies such as plating, photoetching.It then, for example, can be flat in the patterning
Coating photoresist layer on smooth layer 209, by exposure imaging, to form the pixel confining layer 304 for being provided with through-hole;By suitably covering
Film is arranged, and the first electrode 301 can be made to be located at the bottom of the through-hole.Then, in the logical of the pixel confining layer 304
The side wall in hole and upper formation inorganic barrier layer 305.It is alternatively possible at least in the side wall of the through-hole of the pixel confining layer 304
(second electrode 302 is arranged with the part corresponding to the second electrode 303 of the upper surface of the pixel confining layer 304
Part) on form inorganic barrier layer 305.Optionally, adjacent inorganic barrier layer 305 can be continuously formed, thus, it is possible to
Simplify the technique for being used to form inorganic barrier layer 305.
Various modes may be used to be formed in the inorganic barrier layer 305, including but not limited to chemical vapor deposition method, splash
Penetrate technique etc..Then, middle layer 302 and the second electrode 303 are sequentially formed in the first electrode 301.In described
Various modes may be used to be formed in interbed 302 and second electrode 303, it is alternatively possible to the two together by whole face vapor deposition come
It is formed, can so avoid the coating process of later layer to the film such as inorganic barrier layer 305 and centre that had previously been formed
The influence of layer 302.
Then, in step 505, thin-film encapsulation layer 400 is formed in the second electrode 302 of the display device 300.
Optionally, in step 505, the thin-film encapsulation layer 400 is independently formed in the pixel confining layer 304
(as shown in Figure 3) or the thin-film encapsulation layer 400 are across the pixel confining layer in the corresponding second electrode 304 of through-hole
Multiple through-holes in 304 are formed in (as shown in Figure 4) in multiple second electrodes 304 corresponding to it.
The above manufacturing method only carries out step 501 and step 503 compared to the manufacturing method of common display panel
Adjustment, it is simple for process, it is relatively low to the improvement cost of prior art and manufacturing equipment to the of less demanding of material, it is adapted to produce
Industry is promoted.
In addition, although exemplary embodiment has been described herein, range includes any and all based on this public affairs
That opens has equivalent element, modification, omission, combination (for example, scheme that various embodiments are intersected), reorganization or the implementation changed
Example.Element in claims will be construed broadly as based on the language used in claim, however it is not limited in this explanation
Described example, example are to be interpreted as nonexcludability in book or during the implementation of the application.Therefore, this specification and
Example is intended to be to be considered only as example, and real scope and spirit are by following following claims and the full scope of its equivalent institute
Instruction.
Above description is intended to illustrative rather than restrictive.For example, above-mentioned example (or one or more side
Case) it can be in combination with one another.Such as those of ordinary skill in the art can use other embodiments when reading foregoing description.
In addition, in above-mentioned specific implementation mode, various features can be grouped together to simplify the disclosure.This should not be construed as
A kind of not claimed disclosed feature is necessary intention for any claim.On the contrary, subject of the present invention can be with
Less than whole features of specific disclosed embodiment.To which following claims is incorporated to herein as example or embodiment
In specific implementation mode, wherein each claim is independently as individual embodiment, and consider that these embodiments can be with
It is combined with each other with various combinations or arrangement.The scope of the present invention should refer to appended claims and these claims are entitled
The full scope of equivalent form determines.
Above example is only exemplary embodiment of the present invention, is not used in the limitation present invention, protection scope of the present invention
It is defined by the claims.Those skilled in the art can within the spirit and scope of the present invention make respectively the present invention
Kind modification or equivalent replacement, this modification or equivalent replacement also should be regarded as being within the scope of the present invention.
Claims (10)
1. a kind of display panel, the display panel include:
Substrate;
Sequentially form thin film transistor (TFT), patterning flatness layer and display device layer on the substrate, the display device layer
Including pixel confining layer, the pixel confining layer limits multiple pixel regions, is provided with display device in each pixel region, often
A display device includes the opposite of the first electrode close to the side of the thin film transistor (TFT), middle layer and the thin film transistor (TFT)
Second electrode on side;
And thin-film encapsulation layer, for encapsulating multiple display devices, which is characterized in that the thin-film encapsulation layer is arranged in institute
It states in second electrode, inorganic barrier layer, the inorganic barrier is provided between the pixel defining layer and each display device
Layer is configured as stopping that the aqueous vapor from the pixel defining layer invades the display device.
2. display panel according to claim 1, which is characterized in that the substrate includes showing supporting part and for that will show
Show the stretchable bridge part of portion's interconnection, the display supporting part be configured as sequentially forming on it the thin film transistor (TFT),
Pattern flatness layer and display device layer.
3. display panel according to claim 2, which is characterized in that be formed with discontinuous buffering on the substrate
Layer, the thin film transistor (TFT) are formed on the buffer layer.
4. according to the display panel described in any one of claim 1-3, which is characterized in that the thin-film encapsulation layer is independently
Encapsulate the second electrode of the display device in each pixel region.
5. according to the display panel described in any one of claim 1-3, which is characterized in that the thin-film encapsulation layer is across multiple
Pixel region encapsulates the second electrode of multiple display devices therein.
6. according to the display panel described in any one of claim 1-3, which is characterized in that the display device includes organic
LED device.
7. according to the display panel described in any one of claim 1-3, which is characterized in that the adjacent inorganic barrier layer
It is continuously formed.
8. according to the display panel described in any one of claim 1-3, which is characterized in that the inorganic barrier layer at least wraps
Cover the surface for being exposed to the pixel defining layer of the middle layer and the second electrode.
9. a kind of manufacturing method of display panel, including:
Buffer layer is formed on flexible substrates;
Thin film transistor (TFT) is formed on the buffer layer;
Patterning flatness layer is formed on the thin film transistor (TFT);
The display device in each pixel region of pixel confining layer and its restriction is formed on the patterning flatness layer, it is each
Display device includes the opposite side of the first electrode of the side of the close thin film transistor (TFT), middle layer and the thin film transistor (TFT)
On second electrode;And
Thin-film encapsulation layer is formed in the second electrode of the display device, which is characterized in that
The step of formation buffer layer includes on flexible substrates:Form the buffer layer in a discontinuous manner on flexible substrates,
And
Include in the step of forming pixel confining layer and display device on the patterning flatness layer:
The first electrode of each display device is formed on the patterning flatness layer;
The coating photoresist layer on the patterning flatness layer forms the pixel confining layer for being provided with through-hole by exposure imaging, and
So that the first electrode is located at the bottom of the through-hole;
Inorganic barrier layer is formed in the side wall of the through-hole of the pixel confining layer and the upper surface of the pixel confining layer;
Middle layer and the second electrode are sequentially formed on the first electrode.
10. manufacturing method according to claim 9, which is characterized in that formed in the second electrode of the display device
In the step of thin-film encapsulation layer, the through-hole that the thin-film encapsulation layer is independently formed in the pixel confining layer is corresponding described
In second electrode or the thin-film encapsulation layer be formed in across multiple through-holes in the pixel confining layer it is multiple corresponding to it
In second electrode.
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