CN111584590A - Display substrate, display device and manufacturing method - Google Patents

Display substrate, display device and manufacturing method Download PDF

Info

Publication number
CN111584590A
CN111584590A CN202010441500.4A CN202010441500A CN111584590A CN 111584590 A CN111584590 A CN 111584590A CN 202010441500 A CN202010441500 A CN 202010441500A CN 111584590 A CN111584590 A CN 111584590A
Authority
CN
China
Prior art keywords
layer
pixel
barrier layer
pit
display substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202010441500.4A
Other languages
Chinese (zh)
Other versions
CN111584590B (en
Inventor
刘杨
许正印
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to CN202010441500.4A priority Critical patent/CN111584590B/en
Publication of CN111584590A publication Critical patent/CN111584590A/en
Application granted granted Critical
Publication of CN111584590B publication Critical patent/CN111584590B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The invention discloses a display substrate, a display device and a manufacturing method, and relates to the technical field of display. The invention solves the problems of pixel shrinkage and influence on display effect caused by gas generated by a pixel defining layer eroding an edge pixel area in the existing OLED display panel, and the main technical scheme of the invention is as follows: the display substrate comprises a TFT substrate, a first electrode layer, a flat layer, a pixel defining layer, an organic layer of an electroluminescent device and a second electrode layer which are sequentially stacked, wherein the pixel defining layer surrounds a plurality of pixel pits on one side of the flat layer, which is far away from the TFT substrate, the side wall of each pixel pit is provided with a partition layer, and the partition layer is arranged between the pixel defining layer in each pixel pit and the organic layer of the electroluminescent device; the partition layer is used for isolating gas. The partition layer partitions an air passage between the pixel defining layer and the pixel pit so as to prevent the pixel defining layer from generating gas permeation through ultraviolet radiation to the pixel pit to corrode an edge pixel area and further improve the problem of pixel shrinkage.

Description

Display substrate, display device and manufacturing method
Technical Field
The invention relates to the technical field of display devices, in particular to a display substrate, a display device and a manufacturing method.
Background
With the progress of display technology, OLED display products are rapidly applied and popularized, in an OLED display panel, a Pixel Definition Layer (PDL) generally surrounds a plurality of pixel pits, and a sub-pixel is disposed in each pixel pit, so that display is achieved.
However, the Pixel Defining Layer (PDL) is usually made of Polyimide (PI) or other materials, which are partially weak in molecular bonding energy, and a small amount of gas is released from the Pixel Defining Layer (PDL) after a long-term ultraviolet radiation, and the gas can penetrate into the pixel region in the pixel pit to cause deterioration and failure of the organic material at the edge of the pixel region, so that the pixel shrinks, the voltage of the device increases, and the display effect is affected.
Disclosure of Invention
Embodiments of the present invention provide a display substrate, a display device and a manufacturing method thereof, and mainly aim to solve the problem of display effect influence caused by pixel shrinkage due to the fact that a gas generated by a pixel defining layer erodes an edge pixel region in an existing OLED display panel.
In order to achieve the purpose, the invention mainly provides the following technical scheme:
in one aspect, an embodiment of the present invention provides a display substrate, which includes a TFT substrate, a first electrode layer, a planarization layer, a pixel defining layer, an organic layer of an electroluminescent device, and a second electrode layer, which are sequentially stacked, where:
the pixel defining layer is formed by enclosing a plurality of pixel pits on one side of the flat layer, which is far away from the TFT substrate, the side wall of each pixel pit is provided with a partition layer, and the partition layer is arranged between the pixel defining layer in each pixel pit and the organic layer of the electroluminescent device;
wherein the partition layer is used for isolating gas so that the gas in the pixel defining layer can not enter the pixel pit.
The purpose and the technical problem to be solved can be further realized by adopting the following technical measures;
optionally, in a display substrate of the foregoing, the partition layer includes at least one photonic crystal layer;
the photonic crystal layer comprises a first blocking layer and a second blocking layer, the first blocking layer and the second blocking layer are sequentially stacked on the side wall of the pixel pit along a first direction, and the first direction is a direction from the side wall of the pixel pit to the center of the pixel pit;
wherein the first barrier layer and the second barrier layer are metal oxides and/or nonmetal oxides.
Optionally, the difference between the refractive index of the second barrier layer material and the refractive index of the first barrier layer material is greater than or equal to 0.5.
Optionally, in an embodiment of the display substrate, the first barrier layer and the second barrier layer have a predetermined thickness, so that a predetermined light with a predetermined wavelength cannot pass through the photonic crystal layer.
Optionally, in an embodiment of the display substrate, the predetermined thickness of the first barrier layer and the predetermined thickness of the second barrier layer satisfy the following formula:
mλ＝2(nHhH+nLhL) (1)
in the formula: m is the number of diffraction; λ is a reflection peak center wavelength, that is, a preset wavelength of the preset light; n isL、nHThe refractive index of the first barrier layer material and the refractive index of the second barrier layer material are respectively set; h isL、hHThe thickness of the first barrier layer and the thickness of the second barrier layer are respectively.
Optionally, the display device further includes an encapsulation layer;
the packaging layer is arranged on one side, away from the TFT substrate, of the second electrode layer.
In another aspect, an embodiment of the present invention provides a display device, which includes any one of the display substrates described above.
On the other hand, the embodiment of the invention provides a manufacturing method of a display substrate based on the display substrate, which includes the following steps:
manufacturing a TFT substrate;
manufacturing a first electrode layer on the TFT substrate;
sequentially arranging a flat layer and a pixel defining layer on one side of the first electrode layer, which is far away from the TFT substrate, and enclosing a plurality of pixel pits;
forming a partition layer on a sidewall of each of the pixel pits;
an organic layer of an electroluminescent device is arranged in each pixel pit;
and manufacturing a second electrode layer on one side of the organic layer of the electroluminescent device, which is far away from the TFT substrate.
Optionally, in the step of forming the partition layer on the sidewall of each of the pixel pits: comprises that
Disposing at least one set of photonic crystal layers on sidewalls of each of the pixel pits;
the photonic crystal layer comprises a first blocking layer and a second blocking layer, the first blocking layer and the second blocking layer are sequentially stacked on the side wall of the pixel pit along a first direction, and the first direction is a direction pointing to the center of the pixel pit from the side wall of the pixel pit;
wherein the first barrier layer and the second barrier layer are metal oxides and/or nonmetal oxides;
the difference between the refractive index of the second barrier layer material and the refractive index of the first barrier layer material is greater than or equal to 0.5.
Optionally, in the step of forming the partition layer on the sidewall of each of the pixel pits: comprises that
According to the formula m λ ═ 2 (n)HhH+nLHL)(1)
Determining preset thicknesses of the first barrier layer and the second barrier layer so that preset light with preset wavelength cannot pass through the photonic crystal layer;
in the formula: m is the number of diffraction; λ is a reflection peak center wavelength, that is, a preset wavelength of the preset light; n isL、nHThe refractive index of the first barrier layer material and the refractive index of the second barrier layer material are respectively set; h isL、hHThe thickness of the first barrier layer material and the thickness of the second barrier layer material, respectively.
By the technical scheme, the display substrate, the display device and the manufacturing method at least have the following advantages: in order to solve the problems of pixel shrinkage and influence on display effect caused by that gas generated by a pixel defining layer erodes an edge pixel area in the existing OLED display panel, the invention provides a display substrate in which a partition layer is arranged on the side wall of a pixel pit formed by the pixel defining layer to partition an air channel between the pixel defining layer and the pixel pit so as to prevent the pixel defining layer from generating gas through ultraviolet radiation to infiltrate into the pixel pit to erode the edge pixel area, thereby improving the problem of pixel shrinkage and ensuring the later display effect; meanwhile, the side wall of the pixel defining layer is isolated, and gas can only be discharged outwards through one side of the pixel defining layer, which is far away from the TFT substrate, so that the organic layer of the electroluminescent device, which is far away from one side of the TFT substrate, of the pixel defining layer is isolated, and the crosstalk problem of adjacent pixels is avoided.
Drawings
Fig. 1 is a schematic structural diagram of a display substrate according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of an organic layer of an electroluminescent device in a display substrate according to an embodiment of the present invention;
fig. 3 is another schematic structural diagram of a display substrate according to an embodiment of the invention;
FIG. 4 is a waveform of reflected wavelengths of a photonic crystal layer in a display substrate according to an embodiment of the present invention;
fig. 5 is a schematic flow chart illustrating a method for manufacturing a display substrate according to an embodiment of the invention;
fig. 6 is a schematic detailed flowchart of a method for manufacturing a display substrate according to an embodiment of the present invention;
in the figure: the organic electroluminescent device comprises a TFT substrate 1, a flat layer 3, a first electrode layer 2, a pixel defining layer 4, a pixel pit 41, an organic electroluminescent device layer 5, a hole injection layer 51, a hole transport layer 52, an electron blocking layer 53, a light emitting layer 54, a hole blocking layer 55, an electron transport layer 56, an electron injection layer 57, a second electrode layer 6, a blocking layer 7, an encapsulation layer 8 and a first direction a.
Detailed Description
To further illustrate the technical means and effects of the present invention adopted to achieve the predetermined objects, the following detailed description will be given to a display substrate, a display device and a manufacturing method thereof according to the present invention, and specific embodiments, structures, features and effects thereof with reference to the accompanying drawings and preferred embodiments. In the following description, different "one embodiment" or "an embodiment" refers to not necessarily the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.
In order to solve the technical problems, the embodiment of the invention has the following general idea:
example 1
Referring to fig. 1, a display substrate according to an embodiment of the present invention includes a TFT substrate 1, a first electrode layer 2, a planarization layer 3, a pixel defining layer 4, an organic layer 5 of an electroluminescent device, and a second electrode layer 6, which are sequentially stacked:
the pixel defining layer 4 encloses a plurality of pixel pits 41 on one side of the flat layer 3, which is far away from the TFT substrate 1, a partition layer 7 is arranged on the side wall of each pixel pit 41, and the partition layer 7 is arranged between the pixel defining layer 4 and the electroluminescent device organic layer 5 in each pixel pit 41;
wherein the partition layer 7 is used for isolating gas so that the gas in the pixel defining layer 4 cannot enter the pixel pit 41.
Specifically, in order to solve the problem that the display effect is affected by pixel shrinkage caused by gas generated by a pixel defining layer eroding an edge pixel region in the conventional OLED display panel, an embodiment of the present invention provides a display substrate, which mainly aims at an OLED display substrate, and includes a TFT substrate 1, a first electrode layer 2, a flat layer 3, a pixel defining layer 4, an organic layer 5 of an electroluminescent device, and a second electrode layer 6, which are sequentially stacked; the partition layer 7 is arranged on the side wall of the pixel pit formed by the pixel defining layer 4, so that gas in the pixel defining layer 4 cannot penetrate into the pixel pit 41, a pixel area cannot be eroded, the problem of pixel shrinkage is solved, and the display effect is improved.
The TFT substrate 1 is a thin film transistor substrate for providing signal driving and scanning signals to the organic layer 3 of the electroluminescent device through the first electrode layer 2, and includes necessary structures such as a gate electrode, a source electrode, and a drain electrode.
Wherein the first electrode layer 2 and the second electrode layer 6 sequentially serve as an anode and a cathode of the organic layer 5 of the electroluminescent device, the first electrode layer 2 is used for electrically connecting the organic layer 5 of the electroluminescent device to the TFT substrate 1, the second electrode layer 6 is used for receiving a cathode voltage, and the first electrode 3 and the second electrode layer 6 jointly act to make the light-emitting layer 54 in the organic layer 5 of the electroluminescent device emit light; the above description refers to the arrangement of the cathode and the anode in the electroluminescent device in the prior art, which is well known to those skilled in the art and is not difficult to understand or to implement, and will not be described herein in detail.
Referring to fig. 2, the organic layer 5 of the electroluminescent device includes a Hole Injection Layer (HIL)51, a Hole Transport Layer (HTL)52, an Electron Blocking Layer (EBL)53, an emission layer (EML)54, a Hole Blocking Layer (HBL)55, an Electron Transport Layer (ETL)56, and an Electron Injection Layer (EIL)57, which are sequentially stacked, where the Hole Injection Layer (HIL)51 is disposed adjacent to the first electrode layer 2 (anode), and the Electron Injection Layer (EIL)57 is disposed adjacent to the second electrode layer 6 (cathode), and the structure is a structure known to those skilled in the art, and will not be described herein. Specifically, referring to fig. 1, the Hole Blocking Layer (HBL)55, the Electron Transport Layer (ETL)56, and the Electron Injection Layer (EIL)57 in the organic layer 5 of the electroluminescent device are located on the light emitting layer 54, and the above structure is arranged in a whole layer without being interrupted or spaced by any other structure, when a voltage is applied between the first electrode layer 2 and the second electrode layer 6 to generate an electric field, holes will move along the electrons laterally along the Electron Transport Layer (ETL)56, that is, electrons in adjacent pixel pits will move mutually, resulting in crosstalk between different pixel regions, which greatly affects the display effect, in the embodiment of the present application, the blocking layer 7 is arranged on the sidewall of the pixel pit 42, so that the gas generated in the pixel defining layer 4 can only be discharged out through the side of the pixel defining layer 4 facing away from the TFT substrate 1 (i.e. directly above the pixel defining layer 4 in fig. 1), further, the external discharge of the gas causes the organic layer 5 of the electroluminescent device on the side of the pixel defining layer 4 away from the TFT substrate 1 to be corroded and failed, that is, the whole layer structure of the Hole Blocking Layer (HBL)55, the Electron Transport Layer (ETL)56 and the Electron Injection Layer (EIL)57 is cut off, so that the lateral movement of electrons is prevented, and the mutual crosstalk of pixels in different pixel pits 41 is avoided; correspondingly, when the first electrode layer 2 and the second electrode layer 6 are exchanged and the cathode is at the lower anode, the whole layer structure of the Hole Injection Layer (HIL)51, the Hole Transport Layer (HTL)52 and the Electron Blocking Layer (EBL)53 is cut off, so that the lateral movement of holes is prevented, and the crosstalk of pixels in different pixel pits 41 can be avoided; the embodiment of the application is through the problem of the shrink of pixel area is mainly solved in the setting of partition layer 7, and the problem of structure pixel crosstalk simultaneously need not to add other structures and can realize.
The pixel defining layer 4 is arranged on one side of the flat layer 3, which is far away from the TFT substrate 1, and the pixel defining layer 4 encloses a plurality of pixel pits 41 to provide accommodating spaces for the sub-pixels; the pixel defining layer 4 in this embodiment is made of a common polyimide material, and the arrangement manner of the pixel defining layer is the same as that of the pixel defining layer in the prior art, which is not described herein in detail.
The partition layer 7 may be made of metal or organic material, and is disposed between the pixel defining layer 4 and the organic layer 5 of the electroluminescent device in the pixel pit 41 to ensure that the gas in the pixel defining layer 4 does not penetrate into the pixel pit 41, thereby preventing the shrinkage of the edge pixels, and also ensuring that the ultraviolet in the environment is radiated onto the pixel defining layer 4 as little as possible to prevent the generation of too much gas in the pixel defining layer 4.
According to the above list, the partition layer 7 is disposed on the sidewall of the pixel pit 41 surrounded by the pixel defining layer 4 in the display substrate provided by the present invention, so as to partition the air channel between the pixel defining layer 4 and the pixel pit 41, so as to prevent the pixel defining layer 4 from generating gas by ultraviolet radiation to permeate into the pixel pit 41 to corrode the edge pixel region, thereby improving the problem of pixel shrinkage and ensuring the later display effect; meanwhile, the side wall of the pixel defining layer 4 is isolated, and gas can only be discharged outwards through one side of the pixel defining layer 4, which is far away from the TFT substrate 1, so that the organic layer 5 of the electroluminescent device, which is far away from one side of the TFT substrate 1, of the pixel defining layer 4 is isolated, and the crosstalk problem of adjacent pixels is avoided.
The term "and/or" herein is merely an associative relationship describing an associated object, meaning that three relationships may exist, e.g., a and/or B, specifically understood as: both a and B may be included, a may exist alone, or B may exist alone, and any of the three cases can be provided.
Further, referring to fig. 1, in the display substrate according to the embodiment of the present invention, the partition layer 7 includes at least one photonic crystal layer;
the photonic crystal layer includes a first blocking layer 71 and a second blocking layer 72, the first blocking layer 71 and the second blocking layer 72 are sequentially stacked on the sidewall of the pixel pit 41 along a first direction a, and the first direction a is a direction from the sidewall of the pixel pit 41 to the center of the pixel pit 4;
wherein the first barrier layer 71 and the second barrier layer 72 are metal oxide and/or nonmetal oxide.
Specifically, in order to realize the gas and ultraviolet ray insulation effect of the partition layer 7, in this embodiment, the partition layer 7 is configured to include at least one set of the photonic crystal layer, and the photonic crystal is a structure formed by alternately stacking two different dielectric materials, that is, one set of the photonic crystal layer includes two film layers, namely, the first barrier layer 71 and the second barrier layer 72, and when a plurality of sets of the photonic crystal layers are disposed on the sidewalls of the pixel pits 41 in this embodiment, each set of the photonic crystal layer is configured by stacking a combination of the first barrier layer 71 and the second barrier layer 72; the first barrier layer 71 and the second barrier layer 72 are both metal oxides, orOne is metal oxide and the other is nonmetal oxide, the oxides are compact and stable, gas permeation can be effectively blocked, and meanwhile, the lattice matching degree is high in the stacking arrangement, so that fracture is not easy to occur; for example: silicon dioxide (SiO)2) And titanium dioxide (TiO)2) Combinations of (A), (B), (C), (2) Is compact and stable, and is prepared by mixing Silica (SiO)2) Titanium dioxide (TiO) as a first barrier layer 71 disposed adjacent to the pixel defining layer 4 is effective for blocking permeation of gas2) Can effectively absorb or shield ultraviolet rays in the environment, and can be used for preparing titanium dioxide (TiO)2) The organic layer is arranged at a position adjacent to the organic layer 5 of the electroluminescent device, and can protect the OLED display substrate; of course, the barrier layer 7 may also be made of other metal oxides or other organic materials, which are not described herein in detail as long as the gas can be isolated; the first direction a is a left-to-right or right-to-left direction of the adjacent pixel defining layer 4 in the drawing with reference to fig. 1.
Further, in an embodiment of the display substrate provided in the present invention, in a specific implementation, a difference between a refractive index of the material of the second barrier layer 72 and a refractive index of the material of the first barrier layer 72 is greater than or equal to 0.5.
Specifically, in order to realize the effect of blocking other metal materials or organic materials by forming a photonic crystal layer, in this embodiment, the difference between the refractive index of the second barrier layer 72 and the refractive index of the material of the first barrier layer 72 is limited to be greater than or equal to 0.5, so that the material with a high refractive index is disposed at a position adjacent to the pixel defining layer 4, the material with a low refractive index is disposed at a position adjacent to the organic layer 5 of the electroluminescent device, that is, the material film layer with a high refractive index is disposed at a side close to the pixel hole 41, and by using the principle of total reflection, the ultraviolet light reflection effect is increased (when light is emitted from the optically denser medium to the optically thinner medium, when the incident angle exceeds a certain angle, that is, a critical angle, the refracted light completely disappears, and only the reflected light remains, which is called total reflection), and the high refractive material such2) Has certain absorption and shielding effects on ultraviolet rays,the photonic crystal layer can also absorb ultraviolet rays at a position close to the pixel pits 41, and weaken the photo-aging effect of the ultraviolet rays on organic materials in the pixel area, so that the blocking effect of the photonic crystal layer on gas and ultraviolet rays can be realized, for example: such as titanium dioxide (TiO)2) Has a refractive index of 2.5 to 2.7 of silicon dioxide (SiO)2) Has a refractive index of 1.4-1.5.
Further, in an embodiment of the display substrate provided by the present invention, in a specific implementation, the first barrier layer 71 and the second barrier layer 72 have a predetermined thickness, so that a predetermined light with a predetermined wavelength cannot pass through the photonic crystal layer. Specifically, in the OLED product, because the microcavity effect of blue light is strongest, then green light is obtained, and the weakest is red light, the attenuation of the intensity of blue light is large along with the increase of the viewing angle, and the attenuation of the intensity of red light is small along with the increase of the viewing angle, when the display substrate is in a well-adjusted white balance state at the vertical angle of a pixel in the large-viewing-angle product, a situation that the red light occupancy ratio is high occurs at the edge of the display substrate when the display substrate is viewed at the large viewing angle, so that the display effect of the OLED display panel is reddened or dispersed under the large viewing angle, and the display effect is affected; in the embodiment of the present application, in order to solve the above problems, the photonic crystal layer is configured, and a forbidden band for a preset light with a preset wavelength is formed by adjusting the refractive index and the thickness of the film layer, that is, the light wavelength and the spectrum width that can be reflected by the photonic crystal layer are controlled, so as to prevent the preset light from passing through the photonic crystal, in this embodiment, a forbidden band for a red light is formed in the photonic crystal layer by adjusting the thicknesses of the first barrier layer 71 and the second barrier layer 72, that is, the red light emitted from the organic layer 5 of the electroluminescent device is reflected when encountering the photonic crystal layer, and the emergent angle deviates toward the inside of the pixel pit 41 and cannot be emitted in the oblique direction, so as to prevent the red light from being emitted in the lateral direction, so that the red light cannot be emitted to the edge, and further improve the problem that the OLED display panel emits red;
specifically, in this embodiment, the Bragg-Snell formula is used
mλ＝2(nHhH+nLhL) (1)
In the formula: m is the number of diffraction; λ is a reflection peak center wavelength, that is, a preset wavelength of the preset light; n isL、nHThe refractive index of the first barrier layer material and the refractive index of the second barrier layer material are respectively set; h isL、hHThe thickness of the first barrier layer material and the thickness of the second barrier layer material are respectively set;
in this embodiment, referring to fig. 4, λ is set to the wavelength of red light, i.e. the wavelength corresponding to the peak in the figure, according to the requirement, and after the materials of the first barrier layer 71 and the second barrier layer 72 are selected, their respective refractive indexes nL、nHIt is also determined, for example: silicon dioxide (SiO)2) Has a refractive index of 1.4-1.5, titanium dioxide (TiO)2) The refractive index of the film is 2.5-2.7, so long as the thickness of the film and the refractive index of the film are substituted into the formula to meet the requirement of the product of the wavelength of red light and the diffraction number, and the determination process can determine one of the two by the thickness of the empirical film and then solve the other one; the two can also be set as uncertain values and determined by substituting a plurality of tests; in order to ensure that the photonic crystal layer can play a role of changing the exit angle of red light, in this embodiment, the thickness of the photonic crystal layer is set to be 100nm to 1000nm, so as to ensure that the photonic crystal layer is not too thin to change the exit angle of red light, for example: silicon dioxide (SiO)2)90nm, titanium dioxide (TiO)2)40 nm; of course, the first barrier layer 71 and the second barrier layer 72 do not have a certain size or proportional relationship in thickness, and the thickness of the first barrier layer 71 may be greater than/less than/equal to the thickness of the second barrier layer 72, which does not affect the technical effect of preventing red light from transmitting through the photonic crystal layer. Of course, the method can also be applied to the case of preventing light of other colors from emitting, and the specific implementation manner is to set λ to the wavelength of light of other colors, and then determine the thickness of the film layer according to the selected material, which is not described in detail herein.
Further, referring to fig. 3, in a specific implementation, the display substrate provided in this embodiment further includes an encapsulation layer 8; the encapsulation layer 8 is arranged on the side of the second electrode layer 6, which faces away from the TFT substrate 1.
Specifically, in order to protect the entire display substrate, in this embodiment, the encapsulation layer 8 is disposed on the entire surface of the second electrode layer 6 away from the TFT substrate 1, so as to ensure the sealing performance and the safety of the entire display substrate; the encapsulation layer 8 is a common encapsulation material in the prior art, and will not be described herein.
Example 2
Further, an embodiment of the present invention provides a display device, which includes the display substrate in the above embodiments.
It can be understood that the display substrate in this embodiment can be the display substrate described in embodiment 1, and the detailed structure thereof refers to the contents of the above embodiments and is not described herein again.
According to the above list, in the display device provided by the present invention, the partition layer 7 is disposed on the sidewall of the pixel pit 41 surrounded by the pixel defining layer 4, and the air channel between the pixel defining layer 4 and the pixel pit 41 is partitioned, so as to prevent the pixel defining layer 4 from generating gas by ultraviolet radiation to permeate into the pixel pit 41 to corrode the edge pixel region, thereby improving the problem of pixel shrinkage and ensuring the later display effect; meanwhile, the side wall of the pixel defining layer 4 is isolated, and gas can only be discharged outside through one side of the pixel defining layer 4, which is far away from the TFT substrate 1, so that the organic layer 5 of the electroluminescent device, which is far away from one side of the TFT substrate 1, of the pixel defining layer 4 is isolated, and the crosstalk problem of adjacent pixels is avoided; furthermore, by providing the partition layer 7 in such a manner that the first barrier layer 71 and the second barrier layer 72 having suitable refractive indexes and thicknesses are coupled, the problem of redness or powdering of the lower edge of the display device in a large viewing angle is improved.
Example 3
Referring to fig. 5, an embodiment of the present invention provides a method for manufacturing a display substrate according to embodiment 1, including the following steps:
101. manufacturing a TFT substrate 1;
specifically, a Thin Film Transistor (TFT) circuit is fabricated on a substrate according to a conventional technique, which is not difficult to implement or understand for those skilled in the art, and will not be described herein in detail.
102. Manufacturing the first electrode layer 2 on the TFT substrate 1;
specifically, the first electrode layer 2 is fabricated on the TFT substrate 1 according to the conventional technology, in this process, the first electrode layer 2 needs to be electrically connected to the TFT substrate 1, which is not difficult to implement or understand for those skilled in the art, and therefore, redundant description is not repeated here.
103. A flat layer 3 and a pixel defining layer 4 are sequentially arranged on one side of the first electrode layer 2, which is far away from the TFT substrate 1, and a plurality of pixel pits 41 are formed by enclosing;
specifically, the flat layer 3 is manufactured at a position of a side of the first electrode layer 2 departing from the TFT substrate 1, and a specific setting position of the flat layer 3 can be easily understood by a person skilled in the art according to a manufacturing process of the OLED display panel, which is not described herein in detail; polyimide (PI) materials are selected as a pixel defining layer 4, and a plurality of pixel pits 21 are formed on the side, away from the TFT substrate 1, of the flat layer 3 and the first electrode layer 2 in a photoetching or ink-jet printing mode.
104. A partition layer 7 is formed on a side wall of each of the pixel pits 41;
105. an electroluminescent device organic layer 5 is provided in each of the pixel pits 41;
specifically, the organic layer 5 of the electroluminescent device may be formed by evaporation or the like.
106. Manufacturing a second electrode layer 6 on one side of the back 5 of the organic layer of the electroluminescent device, which is away from the TFT substrate 1;
specifically, the second electrode layer 6, which is the cathode layer of the organic layer 5 of the electroluminescent device, may be provided by vapor deposition or the like.
Further, referring to fig. 6, in this embodiment, the step 104 specifically includes the following steps:
201. setting the partition layer 7 to at least comprise a group of photonic crystal layers;
the photonic crystal layer includes a first blocking layer 71 and a second blocking layer 72, the first blocking layer 71 and the second blocking layer 72 are sequentially stacked on the sidewall of the pixel pit 41 along a first direction a, and the first direction a is a direction from the sidewall of the pixel pit 41 to the center of the pixel pit 4;
wherein the first barrier layer 71 and the second barrier layer 72 are metal oxides and/or non-metal oxides;
202. selecting the difference between the refractive index of the material of the second barrier layer 72 and the refractive index of the material of the first barrier layer 71 to be more than or equal to 0.5;
according to the formula m λ ═ 2 (n)HhH+nLHL)(1)
Determining a predetermined thickness of the first barrier layer 71 and the second barrier layer 72 so that a predetermined light having a predetermined wavelength cannot pass through the photonic crystal layer;
in the formula: m is the number of diffraction; λ is a reflection peak center wavelength, that is, a preset wavelength of the preset light; n isL、nHThe refractive index of the first barrier layer material and the refractive index of the second barrier layer material are respectively set; h isL、hHThe thickness of the first barrier layer material and the thickness of the second barrier layer material, respectively.
203. A first blocking layer 71 and a second blocking layer 72 are sequentially disposed along the first direction a on sidewalls of each of the pixel pits 41.
Further, referring to fig. 3, in this embodiment, after step 106, the manufacturing method further includes:
107. arranging an encapsulation layer 8 on one side of the second electrode layer 6, which is far away from the TFT substrate 1;
specifically, the encapsulation layer 8 is fabricated by Chemical Vapor Deposition (CVD), Atomic Layer Deposition (ALD), magnetron sputtering (Sputter), inkjet printing (IJP), or the like.
It should be noted that the above-mentioned embodiments are only preferred embodiments of the present invention, and the present invention is not limited in any way, so that the above-mentioned embodiments can be combined, and any simple modification, equivalent change and modification made to the above-mentioned embodiments according to the technical spirit of the present invention still fall within the scope of the technical solution of the present invention.

Claims (10)

1. A display substrate comprises a TFT substrate, a first electrode layer, a flat layer, a pixel defining layer, an organic layer of an electroluminescent device and a second electrode layer which are sequentially stacked, and is characterized in that:
the pixel defining layer is formed by enclosing a plurality of pixel pits on one side of the flat layer, which is far away from the TFT substrate, the side wall of each pixel pit is provided with a partition layer, and the partition layer is arranged between the pixel defining layer in each pixel pit and the organic layer of the electroluminescent device;
wherein the partition layer is used for isolating gas so that the gas in the pixel defining layer can not enter the pixel pit.
2. The display substrate of claim 1, wherein:
the partition layer at least comprises a group of photonic crystal layers;
the photonic crystal layer comprises a first blocking layer and a second blocking layer, the first blocking layer and the second blocking layer are sequentially stacked on the side wall of the pixel pit along a first direction, and the first direction is a direction from the side wall of the pixel pit to the center of the pixel pit;
wherein the first barrier layer and the second barrier layer are metal oxides and/or nonmetal oxides.
3. The display substrate of claim 2, wherein:
the difference between the refractive index of the second barrier layer material and the refractive index of the first barrier layer material is greater than or equal to 0.5.
4. The display substrate of claim 2, wherein:
the first blocking layer and the second blocking layer are provided with preset thicknesses, so that preset light with preset wavelength cannot pass through the photonic crystal layer.
5. The display substrate of claim 4, wherein:
the preset thickness of the first barrier layer and the preset thickness of the second barrier layer satisfy the following formula:
mλ＝2(nHhH+nLhL) (1)
in the formula: m is the number of diffraction; λ is a reflection peak center wavelength, that is, a preset wavelength of the preset light; n isL、nHThe refractive index of the first barrier layer material and the refractive index of the second barrier layer material are respectively set; h isL、hHThe thickness of the first barrier layer and the thickness of the second barrier layer are respectively.
6. The display substrate of claim 1, wherein:
the packaging structure also comprises a packaging layer;
the packaging layer is arranged on one side, away from the TFT substrate, of the second electrode layer.
7. A display device, characterized in that it comprises:
the display substrate of any one of claims 1-6.
8. A method for manufacturing a display substrate according to any one of claims 1 to 6, comprising the steps of:
manufacturing a TFT substrate;
manufacturing a first electrode layer on the TFT substrate;
sequentially arranging a flat layer and a pixel defining layer on one side of the first electrode layer, which is far away from the TFT substrate, and enclosing a plurality of pixel pits;
forming a partition layer on a sidewall of each of the pixel pits;
an organic layer of an electroluminescent device is arranged in each pixel pit;
and manufacturing a second electrode layer on one side of the organic layer of the electroluminescent device, which is far away from the TFT substrate.
9. The method for manufacturing a display substrate according to claim 8, wherein in the step of manufacturing a partition layer on a sidewall of each of the pixel pits: comprises that
Disposing at least one set of photonic crystal layers on sidewalls of each of the pixel pits;
the photonic crystal layer comprises a first blocking layer and a second blocking layer, the first blocking layer and the second blocking layer are sequentially stacked on the side wall of the pixel defining layer along a first direction, and the first direction is a direction from the side wall of the pixel pit to the center of the pixel pit;
wherein the first barrier layer and the second barrier layer are metal oxides and/or nonmetal oxides;
the difference between the refractive index of the second barrier layer material and the refractive index of the first barrier layer material is greater than or equal to 0.5.
10. The method of manufacturing a display substrate according to claim 9, wherein in the step of manufacturing a partition layer on a sidewall of each of the pixel pits: comprises that
According to the formula m λ ═ 2 (n)HhH+nLHL) (1)
Determining preset thicknesses of the first barrier layer and the second barrier layer so that preset light with preset wavelength cannot pass through the photonic crystal layer;
in the formula: m is the number of diffraction; λ is a reflection peak center wavelength, that is, a preset wavelength of the preset light; n isL、nHThe refractive index of the first barrier layer material and the refractive index of the second barrier layer material are respectively set; h isL、hHThe thickness of the first barrier layer material and the thickness of the second barrier layer material, respectively.
CN202010441500.4A 2020-05-22 2020-05-22 Display substrate, display device and manufacturing method Active CN111584590B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010441500.4A CN111584590B (en) 2020-05-22 2020-05-22 Display substrate, display device and manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010441500.4A CN111584590B (en) 2020-05-22 2020-05-22 Display substrate, display device and manufacturing method

Publications (2)

Publication Number Publication Date
CN111584590A true CN111584590A (en) 2020-08-25
CN111584590B CN111584590B (en) 2023-04-11

Family

ID=72113954

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010441500.4A Active CN111584590B (en) 2020-05-22 2020-05-22 Display substrate, display device and manufacturing method

Country Status (1)

Country Link
CN (1) CN111584590B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112531000A (en) * 2020-12-02 2021-03-19 山东傲晟智能科技有限公司 OLED display panel and manufacturing method thereof
CN112542497A (en) * 2020-12-03 2021-03-23 武汉华星光电半导体显示技术有限公司 Display panel and manufacturing method thereof
WO2021249122A1 (en) * 2020-06-08 2021-12-16 京东方科技集团股份有限公司 Oled display substrate and manufacturing method therefor, display panel, and display device
CN114420877A (en) * 2022-01-29 2022-04-29 京东方科技集团股份有限公司 Display substrate, preparation method thereof and display device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140014909A1 (en) * 2012-07-11 2014-01-16 Samsung Display Co. Ltd. Organic light-emitting display apparatus and method of manufacturing the same
CN104538558A (en) * 2014-12-25 2015-04-22 昆山国显光电有限公司 OLED device and method thereof
CN107819080A (en) * 2017-10-23 2018-03-20 京东方科技集团股份有限公司 A kind of array base palte, its preparation method and display device
CN108511621A (en) * 2018-03-08 2018-09-07 京东方科技集团股份有限公司 A kind of display panel and its manufacturing method
CN110224012A (en) * 2019-06-18 2019-09-10 京东方科技集团股份有限公司 Display panel and display device
CN110518053A (en) * 2019-08-29 2019-11-29 合肥鑫晟光电科技有限公司 Display base plate and preparation method thereof, display device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140014909A1 (en) * 2012-07-11 2014-01-16 Samsung Display Co. Ltd. Organic light-emitting display apparatus and method of manufacturing the same
CN104538558A (en) * 2014-12-25 2015-04-22 昆山国显光电有限公司 OLED device and method thereof
CN107819080A (en) * 2017-10-23 2018-03-20 京东方科技集团股份有限公司 A kind of array base palte, its preparation method and display device
CN108511621A (en) * 2018-03-08 2018-09-07 京东方科技集团股份有限公司 A kind of display panel and its manufacturing method
CN110224012A (en) * 2019-06-18 2019-09-10 京东方科技集团股份有限公司 Display panel and display device
CN110518053A (en) * 2019-08-29 2019-11-29 合肥鑫晟光电科技有限公司 Display base plate and preparation method thereof, display device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021249122A1 (en) * 2020-06-08 2021-12-16 京东方科技集团股份有限公司 Oled display substrate and manufacturing method therefor, display panel, and display device
CN112531000A (en) * 2020-12-02 2021-03-19 山东傲晟智能科技有限公司 OLED display panel and manufacturing method thereof
CN112542497A (en) * 2020-12-03 2021-03-23 武汉华星光电半导体显示技术有限公司 Display panel and manufacturing method thereof
CN114420877A (en) * 2022-01-29 2022-04-29 京东方科技集团股份有限公司 Display substrate, preparation method thereof and display device
CN114420877B (en) * 2022-01-29 2024-03-12 京东方科技集团股份有限公司 Display substrate, preparation method thereof and display device

Also Published As

Publication number Publication date
CN111584590B (en) 2023-04-11

Similar Documents

Publication Publication Date Title
CN111584590B (en) Display substrate, display device and manufacturing method
CN111384128B (en) Transparent display device
KR102631878B1 (en) Organic light emitting display device
US8274218B1 (en) Light emitting display
JP4775865B2 (en) Organic EL display device and manufacturing method thereof
US10276833B2 (en) Organic light emitting diode display and manufacturing method thereof
KR101391326B1 (en) Color conversion filter, and process for producing color conversion filter and organic el display
US8102118B2 (en) White organic light emitting device and color display apparatus employing the same
US8587191B2 (en) Organic light emitting device and color display apparatus using the same
US20070103056A1 (en) OLED device having improved light output
EP2017907A2 (en) Display apparatus
KR20140033867A (en) Organic light emitting display panel
CN101137257A (en) Organic electroluminescent element array
JP2011119233A (en) Organic electroluminescent element and display with same
CN112635524A (en) Self-luminous display panel
JP4736284B2 (en) Display device and manufacturing method thereof
KR20110059304A (en) Organic electro-luminescence device
KR102042534B1 (en) Organic light emitting display panel and method for fabricating the same
KR20200029885A (en) Organic light emitting display device and method for manufacturing the same
US7808173B2 (en) Organic light emitting display device and method of fabricating the same
KR102605614B1 (en) Organic light emitting display device
JP2012054091A (en) Multicolor display device
JP2009164049A (en) Organic el device
JP2018190666A (en) Organic electroluminescent element, display device, and lighting system
KR20220143252A (en) Organic light emitting diode display device and manufacturing method thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant