CN108511538B - 光电模块 - Google Patents

光电模块 Download PDF

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Publication number
CN108511538B
CN108511538B CN201810433193.8A CN201810433193A CN108511538B CN 108511538 B CN108511538 B CN 108511538B CN 201810433193 A CN201810433193 A CN 201810433193A CN 108511538 B CN108511538 B CN 108511538B
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China
Prior art keywords
light
wafer
transparent
substrate
wavelength
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CN201810433193.8A
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English (en)
Chinese (zh)
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CN108511538A (zh
Inventor
哈特穆特·拉德曼
亚历山大·比特斯
苏珊·韦斯藤赫费尔
西蒙·古布斯尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ames Osram Asia Pacific Pte Ltd
Sensors Singapore Private Ltd
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Heptagang Shiguang Co ltd
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Publication of CN108511538A publication Critical patent/CN108511538A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
    • G01S17/04—Systems determining the presence of a target
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4811—Constructional features, e.g. arrangements of optical elements common to transmitter and receiver
    • G01S7/4813—Housing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H10F55/255—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/407—Optical elements or arrangements indirectly associated with the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Electromagnetism (AREA)
  • Led Device Packages (AREA)
  • Light Receiving Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Optical Radar Systems And Details Thereof (AREA)
CN201810433193.8A 2012-04-05 2013-04-03 光电模块 Active CN108511538B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261620605P 2012-04-05 2012-04-05
US61/620,605 2012-04-05
US13/827,264 US8791489B2 (en) 2012-04-05 2013-03-14 Opto-electronic module
US13/827,264 2013-03-14
CN201380018959.1A CN104303077B (zh) 2012-04-05 2013-04-03 光电模块

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201380018959.1A Division CN104303077B (zh) 2012-04-05 2013-04-03 光电模块

Publications (2)

Publication Number Publication Date
CN108511538A CN108511538A (zh) 2018-09-07
CN108511538B true CN108511538B (zh) 2021-09-21

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
CN201380018959.1A Active CN104303077B (zh) 2012-04-05 2013-04-03 光电模块
CN201810433193.8A Active CN108511538B (zh) 2012-04-05 2013-04-03 光电模块

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201380018959.1A Active CN104303077B (zh) 2012-04-05 2013-04-03 光电模块

Country Status (8)

Country Link
US (2) US8791489B2 (enExample)
EP (1) EP2834683B1 (enExample)
JP (2) JP2015519545A (enExample)
KR (1) KR20140147119A (enExample)
CN (2) CN104303077B (enExample)
SG (2) SG11201405660VA (enExample)
TW (2) TWI587491B (enExample)
WO (1) WO2013151507A1 (enExample)

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Also Published As

Publication number Publication date
CN104303077B (zh) 2018-05-29
EP2834683A4 (en) 2015-12-30
CN104303077A (zh) 2015-01-21
KR20140147119A (ko) 2014-12-29
JP2017152698A (ja) 2017-08-31
US8975108B2 (en) 2015-03-10
TW201349467A (zh) 2013-12-01
US8791489B2 (en) 2014-07-29
US20140291703A1 (en) 2014-10-02
SG10201508450UA (en) 2015-11-27
TW201709491A (zh) 2017-03-01
TWI567954B (zh) 2017-01-21
SG11201405660VA (en) 2014-11-27
CN108511538A (zh) 2018-09-07
TWI587491B (zh) 2017-06-11
EP2834683A1 (en) 2015-02-11
JP2015519545A (ja) 2015-07-09
US20130264586A1 (en) 2013-10-10
EP2834683B1 (en) 2020-03-25
WO2013151507A1 (en) 2013-10-10

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Address after: Shinka ha

Patentee after: Ames Osram Asia Pacific Pte. Ltd.

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Patentee before: Sensors Singapore Private Ltd.

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Patentee before: HEPTAGON MICRO OPTICS Pte. Ltd.

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