CN108509749B - Design method of dual-passband power amplifier - Google Patents
Design method of dual-passband power amplifier Download PDFInfo
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- CN108509749B CN108509749B CN201810349503.8A CN201810349503A CN108509749B CN 108509749 B CN108509749 B CN 108509749B CN 201810349503 A CN201810349503 A CN 201810349503A CN 108509749 B CN108509749 B CN 108509749B
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Abstract
The invention discloses a design method of a dual-passband power amplifier, which comprises the following steps: determining working parameters of the band-pass filter according to design indexes of the dual-band power amplifier; the working bandwidth of the band-pass filter comprises two working frequency bands of a dual-band; determining the working frequency band and the order of the low-pass prototype filter according to the working parameters of the band-pass filter; performing norton transformation on the output impedance of the low-pass prototype filter to 50 omega; inserting a transmission zero into the pass band of the low-pass prototype filter after the norton transformation; and converting the low-pass prototype filter inserted with the transmission zero into a microstrip line form. According to the design method of the dual-passband power amplifier, the transmission zero is inserted into the single-passband matched filter, so that the dual-passband output circuit with the functions of matching and filtering fused is obtained, the design method is simple and effective, the design is relatively simple and convenient, and the size of the circuit cannot be increased due to the introduction of the transmission zero.
Description
Technical Field
The invention relates to the field of microwave communication, in particular to a design method of a dual-passband power amplifier.
Background
The dual-passband or multi-passband is more and more widely applied to modern communication systems, and the dual-passband amplifier can simultaneously work (for short, in a concurrent mode) in two different frequency bands, so that the method adapts to the diversification trend of modern wireless communication systems. In the radio frequency front end, the amplifier is used as a module occupying the largest space, and the dual-mode or multi-mode amplifier can avoid designing an additional amplifying circuit, so that the size is greatly reduced. The structure and performance of the matching circuit, which is an indispensable part of the amplifier, directly determine whether the amplifier is in an ideal operating state.
There are many ways to design dual-passband amplifier matching networks, and the most common way is to analyze the impedance characteristics of the amplifier to achieve matching in two operating bandsAnd (6) matching. The method has the defects of more complicated design process, larger final circuit size and the like because different impedance characteristics of the transistors are considered. A second, more common approach is to use switches such as micro-electromechanical systems (MEMS), PIN-switched diodes, etc. This design approach increases insertion loss due to the introduction of the switch and cannot be designed as a concurrent dual-passband system, which limits the use of the switch in dual-passband systems. Recently, a method for designing a concurrent dual-passband amplifier is proposed, in which a branch load line is connected in series behind a single-passband matching network, so that the single-passband matching network is changed into a dual-passband, and the dual-passband amplifier is realized. When designing the dual-passband amplifier, firstly, a single-passband power amplifier is designed, and the working frequency band of the power amplifier simultaneously comprises f1And f2Then, a stub load line is connected in series after the matching circuit, and the length of transmission line can be at the frequency f1And f2A transmission zero is generated, thereby realizing the effect of dual-passband. However, the original single pass band matching circuit requires an additional increase in size due to the introduction of a series load line. Although the design method is simple and easy to implement, the defect of large circuit size exists, and the design requirement of miniaturization of modern communication systems is not met. The schematic diagram and the overall structure are shown in fig. 1.
In a conventional dual-band amplifier, the amplifier can be divided into two types of concurrent amplifier and non-concurrent amplifier. Concurrent mode amplifiers may operate in different frequency bands simultaneously, while non-concurrent mode amplifiers may not operate in different frequency bands simultaneously. For a concurrent mode amplifier, the most common method for designing a matching circuit is to obtain model impedance through simulation analysis of an amplifier model, and then realize matching in two frequency bands respectively. The process should ensure the matching of the working frequency band and consider the out-of-band suppression effect, so the design process is often complex. Another concurrent dual-passband matching technique solves the complex design process of the traditional matching, and a load resonator is directly cascaded behind a single-passband amplifier, so that a transmission zero is generated in the single passband, and dual-band amplification is realized (the structure is shown in fig. 1). This approach is simple and effective, but because of the extra cascaded network, the overall size of the matching circuit becomes much larger, which is not conducive to miniaturized designs. For non-concurrent mode amplifiers, this is often achieved by the introduction of radio frequency switches (MEMS, PIN-switched diodes, etc.), which makes this mode of operation suffer from large insertion losses due to the introduction of radio frequency switches.
Research conditions show that for a matching circuit of an amplifier, a traditional design method of a concurrent dual-passband matching circuit is complicated or the circuit size is large, and a non-concurrent matching circuit based on a radio frequency switch has large insertion loss. The design methods are difficult to realize that the system is a concurrent system, has smaller insertion loss and also meets the design requirement of miniaturization.
Disclosure of Invention
The technical problem to be solved by the invention is that for a matching circuit of an amplifier, the traditional design method of a concurrent dual-passband matching circuit is complicated or the circuit size is large, a non-concurrent matching circuit based on a radio frequency switch has large insertion loss, and the design methods are difficult to realize that the circuit is a concurrent system and has small insertion loss.
The invention is realized by the following technical scheme:
a design method of a dual-passband power amplifier comprises the following steps: s1: determining working parameters of the band-pass filter according to design indexes of the dual-band power amplifier; the working bandwidth of the band-pass filter comprises two working frequency bands of a dual-band; s2: determining the working frequency band and the order of the low-pass prototype filter according to the working parameters of the band-pass filter; s3: performing norton transformation on the output impedance of the low-pass prototype filter to 50 omega; s4: inserting a transmission zero into the pass band of the low-pass prototype filter after the norton transformation; s5: converting the low-pass prototype filter inserted with the transmission zero point into a micro-strip line form; s6: and matching the filter as output to obtain a dual-passband power amplifier.
In the prior art, for a matching circuit of an amplifier, a traditional design method of a concurrent dual-passband matching circuit is complicated or the circuit size is large, a non-concurrent matching circuit based on a radio frequency switch has large insertion loss, and the design methods are difficult to realize that the circuit is a concurrent system and has small insertion loss.
When the method is applied, firstly, the working parameters of the band-pass filter are determined according to the design indexes of the dual-passband power amplifier; the working bandwidth of the band-pass filter comprises two working frequency bands of a dual-band; and determining the cutoff frequency of the band-pass filter to be designed according to the design index of the dual-band-pass power amplifier. Because the invention adopts the mode of inserting the transmission zero, the working bandwidth of the single passband contains the dual-passband frequency to be designed, and the two working frequency bands are required to be in the passband, thus the matching circuit can be ensured to work in the appointed frequency band after the transmission zero is inserted to construct a stop band. And then determining the working frequency band and the order of the low-pass prototype filter according to the working parameters of the band-pass filter. Then, performing norton transformation on the output impedance of the low-pass prototype filter to 50 omega; in order to make the output impedance of the matched band-pass filter 50 Ω, R is converted by using a Norton converter4And converted to 50 omega.
The generated matching circuit is a single-passband matching circuit, and a transmission zero point is inserted into the passband of the low-pass prototype filter after the Nonton conversion, so that the single-passband matching circuit forms a double-passband matching circuit; the double-passband matching circuit is formed by inserting transmission zeros in a passband on the basis of a single passband. The method is simple and easy to realize, can enable the matching circuit to simultaneously complete the filtering function, and is a new method for the traditional dual-passband PA (power amplifier) with the matching circuit and the filtering circuit designed separately.
And then converting the low-pass prototype filter inserted with the transmission zero into a microstrip line form, wherein in a radio frequency circuit, distributed parameter elements are often adopted to replace lumped parameter elements, so that the matching circuit needs to be converted into the microstrip line form, and the design is finished. The invention obtains the dual-passband output circuit with the functions of matching and filtering fused by inserting the transmission zero point into the single-passband matching filter, can omit the matching circuit to directly connect the amplifier with the filter and simultaneously complete the matching function, and simultaneously takes the microstrip line converted by the output matching circuit inductor as a part of the matching and biasing circuit, thereby being simple and effective, having relatively simple and convenient design, and not increasing the circuit size due to the introduction of the transmission zero point.
Further, step S4 includes the following sub-steps: and inserting transmission zero in the pass band by connecting an inductor in series in a parallel capacitor of the low-pass prototype filter after the Norton conversion.
Further, step S4 includes the following sub-steps: and inserting transmission zero into the pass band by connecting capacitors in parallel in the parallel inductor of the low-pass prototype filter after the Norton conversion.
Further, step S4 includes the following sub-steps: and (3) inserting transmission zero in the pass band by connecting inductors in parallel in the series capacitor of the low-pass prototype filter after the Norton conversion.
Further, step S4 includes the following sub-steps: and realizing insertion of transmission zero in a pass band by connecting capacitors in parallel in series inductors of the low-pass prototype filter after the Norton conversion.
When the invention is applied, in order to obtain the transmission zero point, for the parallel resonator, one transmission zero point is obtained by connecting an inductor in series in a parallel capacitor or connecting a capacitor in series in the parallel inductor. For a series resonator, a transmission zero is obtained by connecting an inductance in parallel with a series capacitance or a capacitance in parallel with a series inductance.
Further, step S5 includes the following sub-steps: s51: replacing the series inductor in the low-pass prototype filter inserted with the transmission zero with a high-impedance line; s52: replacing the parallel inductor in the low-pass prototype filter inserted with the transmission zero by a short circuit line; s53: and replacing the parallel capacitor in the low-pass prototype filter after the transmission zero point is inserted by an open circuit, and reserving the blocking capacitor and the capacitor generated when the transmission zero point is inserted.
When the invention is applied, in a radio frequency circuit, distributed parameter elements are often adopted to replace lumped parameter elements, so that the matching circuit needs to be converted into a microstrip line form. And after the capacitor generated when the transmission zero point is inserted is reserved, the transmission zero point can be formed, and the effect of partially removing power supply ripples can be achieved.
Further, step S2 includes the following sub-steps: s21: the output impedance of a transistor in the band-pass filter is equivalent to the series connection of a capacitor and a resistor, and the output impedance is connected into a low-pass prototype filter; s22: and obtaining the parameters of the low-pass prototype filter according to the output impedance of the transistor.
When the invention is applied, the output impedance Z of the transistors＝R0The jX can be replaced by a parallel connection of a resistor and a capacitor, where X ═ 1/ω C0. And calculating a g value in the low-pass prototype in a closed solution mode, then obtaining the lumped element parameter of the band-pass filter through the g value, converting the parallel capacitor into a parallel resonator, and converting the series inductor into a series resonator. After the conversion, the input impedance is obtained to be Zs *The matched band pass filter of (1).
Compared with the prior art, the invention has the following advantages and beneficial effects:
1. the invention relates to a design method of a dual-passband power amplifier, which is characterized in that a transmission zero is inserted into a single-passband matched filter to obtain a dual-passband output circuit with the functions of matching and filtering fused, the method can omit a matching circuit to directly connect the amplifier with the filter and simultaneously complete the matching function, and a microstrip line converted by an output matching circuit inductor is simultaneously used as a part of a matching and biasing circuit, so that the design is simple and effective, the design is relatively simple and convenient, the circuit size cannot be increased due to the introduction of the transmission zero;
2. according to the design method of the dual-passband power amplifier, after the capacitor generated when the transmission zero point is inserted is reserved, the transmission zero point can be formed, and the effect of partially removing power supply ripples can be achieved;
3. according to the design method of the dual-passband power amplifier, the output impedance of the transistor is introduced into the low-pass prototype filter, so that the low-pass prototype filter can be effectively subjected to impedance matching.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the principles of the invention. In the drawings:
FIG. 1 is a schematic diagram of a prior art principle and overall structure;
FIG. 2 is a schematic diagram of a third order low pass prototype filter;
FIG. 3 is a schematic diagram of a third order low pass prototype filter after conversion;
FIG. 4 is a schematic diagram of a Noton process;
FIG. 5 is a schematic diagram of a matching circuit incorporating transmission zeros;
FIG. 6 is a schematic diagram of a single pass band matching circuit;
FIG. 7 is a schematic diagram of a dual passband matching circuit;
FIG. 8 is a simulation diagram of a single-pass band matching circuit;
FIG. 9 is a simulation diagram of a dual passband matching circuit;
FIG. 10 is a schematic diagram of a dual band amplifier;
fig. 11 is a simulation diagram of a dual band pass amplifier.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to examples and accompanying drawings, and the exemplary embodiments and descriptions thereof are only used for explaining the present invention and are not meant to limit the present invention.
Examples
The invention discloses a design method of a dual-passband power amplifier, which comprises the following steps: s1: determining working parameters of the band-pass filter according to design indexes of the dual-band power amplifier; the working bandwidth of the band-pass filter comprises two working frequency bands of a dual-band; s2: determining the working frequency band and the order of the low-pass prototype filter according to the working parameters of the band-pass filter; s3: performing norton transformation on the output impedance of the low-pass prototype filter to 50 omega; s4: inserting a transmission zero into the pass band of the low-pass prototype filter after the norton transformation; s5: converting the low-pass prototype filter inserted with the transmission zero point into a micro-strip line form; s6: and matching the filter as output to obtain a dual-passband power amplifier.
In this embodiment, as shown in fig. 2, the third-order low-pass prototype design is adopted to output the matched filter network.
As shown in fig. 2 and 3, g of the filter0Is a transistor output resistor R0Normalized impedance of, output impedance Z of, transistors＝R0The jX can be replaced by a parallel connection of a resistor and a capacitor, where X ═ 1/ω C0. And calculating a g value in the low-pass prototype in a closed solution mode, then obtaining the lumped element parameter of the band-pass filter through the g value, converting the parallel capacitor into a parallel resonator, and converting the series inductor into a series resonator. After the conversion, the input impedance is obtained to be Zs *Matched band pass filter of (2) load R at this time4＝g4R0Is not equal to 50 omega.
As shown in FIG. 4, in order to make the output impedance of the matched band-pass filter 50 Ω, R is converted by using a Norton conversion4And converted to 50 omega. Wherein the input impedance is ZiUnchanged, output impedance Z0Converted to n after norton conversion2X is n of2＝50Ω/Z0. After the above design steps, an input impedance is conjugate-matched with the transistor impedance, and the output impedance of the bandpass filter is 50 Ω.
As shown in fig. 5, C is the capacitance in series. By connecting appropriate values of C in series, a transmission zero is generated in a single passband, thereby forming a dual passband characteristic. Here, R0And C0As transistor impedances. Wherein, C1＝C1'+C0. The A matrix is used for analyzing the dual-passband matching circuit to obtain the transmission function of the dual-passband matching circuit, and the zero position of the dual-passband matching circuit is analyzed.
As shown in fig. 6 to 9, the present invention shows the design effect by one example through the above design process. Taking the transistor impedance as ZsEach center frequency was designed to be 1.5G (25-j × 11.7) ΩHz/2.45GHz dual-passband matching circuit. Firstly, a broadband matching filter capable of working at 1GHz-2.8GHz is designed. Then, without changing any parameter of the single-passband matching circuit, a 4.2pF capacitor is connected in series with the parallel inductor of the parallel resonator, thereby generating a transmission zero. The simulation results of fig. 6 are shown in fig. 8, and the simulation results of fig. 7 are shown in fig. 9.
As shown in fig. 10 and 11, C2' is reserved as a dc blocking capacitance. Also retained is C, since retention of the capacitance C in later designs allows for easy debugging of the circuit. And finally, optimizing to reach the final design target. Through the design steps, the invention finally designs the dual-passband power amplifier. The transistor of the amplifier adopts CGH40010-F of CREE company, and the output power of the transistor can reach 10W. As shown in fig. 10, the whole structure of the amplifier is implemented by microstrip lines, the input matching network is implemented by a single-passband matching filter, the output matching network is implemented by a dual-passband matching network provided by the present invention, and the input and the output are all implemented by third-order matching networks. As a result of the simulation shown in FIG. 11, it can be seen that the maximum output efficiency of the dual passband 1.5GHz/2.45GHz is 70% or more and the gain is about 13dB at an input power of 28 dBm.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are merely exemplary embodiments of the present invention, and are not intended to limit the scope of the present invention, and any modifications, equivalent substitutions, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (3)
1. A design method of a dual-passband power amplifier is characterized by comprising the following steps:
s1: determining working parameters of the band-pass filter according to design indexes of the dual-band power amplifier; the working bandwidth of the band-pass filter comprises two working frequency bands of a dual-band;
s2: determining the working frequency band and the order of the low-pass prototype filter according to the working parameters of the band-pass filter;
s3: performing norton transformation on the output impedance of the low-pass prototype filter to 50 omega;
s4: inserting an output zero point into the pass band of the low-pass prototype filter after the Norton conversion;
s5: converting the low-pass prototype filter inserted with the output zero point into a micro-strip line form;
s6: matching the filter as output to obtain a dual-passband power amplifier;
wherein, step S4 includes the following substeps:
inserting an output zero point into a pass band by connecting an inductor in series in a parallel capacitor of the low-pass prototype filter after the Norton conversion; or
Inserting an output zero point into a pass band by connecting capacitors in parallel in an inductor of the low-pass prototype filter after the Noton conversion; or
The parallel connection of an inductor in a series capacitor of the low-pass prototype filter after the Noton conversion is realized to insert an output zero point in a pass band; or
And realizing the insertion of an output zero point in a pass band by connecting a capacitor in parallel in a series inductor of the low-pass prototype filter after the Norton conversion.
2. A method for designing a dual passband power amplifier according to claim 1, wherein step S5 comprises the following sub-steps:
s51: replacing the series inductor in the low-pass prototype filter inserted with the output zero point with a high-impedance line;
s52: replacing the parallel inductor in the low-pass prototype filter inserted with the output zero point by a short circuit line;
s53: and replacing the parallel capacitor in the low-pass prototype filter after the output zero point is inserted by an open circuit, and reserving the blocking capacitor and the capacitor generated when the output zero point is inserted.
3. A method for designing a dual passband power amplifier according to claim 1, wherein step S2 comprises the following sub-steps:
s21: the output impedance of a transistor in the band-pass filter is equivalent to the series connection of a capacitor and a resistor, and the output impedance is connected into a low-pass prototype filter;
s22: and obtaining the parameters of the low-pass prototype filter according to the output impedance of the transistor.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109474247A (en) * | 2018-11-14 | 2019-03-15 | 电子科技大学 | A kind of dual-passband power amplifier that filtering is integrated |
| CN111200406A (en) * | 2020-01-17 | 2020-05-26 | 电子科技大学 | Dual-passband power amplifier based on three-frequency impedance matching |
| CN111654256B (en) * | 2020-05-22 | 2022-03-29 | 华南理工大学 | Double-frequency filtering power amplifier |
| CN116317983B (en) * | 2023-05-22 | 2024-04-05 | 南方科技大学 | Broadband gallium nitride power amplifier and chip based on mixed band-pass low-pass network |
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