CN112152579B - Reflection-free amplifier - Google Patents
Reflection-free amplifier Download PDFInfo
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- CN112152579B CN112152579B CN202011036651.8A CN202011036651A CN112152579B CN 112152579 B CN112152579 B CN 112152579B CN 202011036651 A CN202011036651 A CN 202011036651A CN 112152579 B CN112152579 B CN 112152579B
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- amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/4508—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The embodiment of the application discloses a reflectionless amplifier, which is characterized in that the reflectionless amplifier is a single-ended or differential reflectionless amplifier, and comprises a high-frequency signal absorption network, a low-frequency signal absorption network and a passband signal amplifier; the passband signal is a signal amplified by the amplifier according to the design; the high-frequency signal absorption network is used for absorbing high-frequency signals in input signals, and the high-frequency signals are input signals with signal frequencies higher than those of the passband signals; the low-frequency signal absorption network is used for absorbing low-frequency signals in input signals, and the low-frequency input signals are input signals with signal frequencies lower than those of the passband signals. The scheme provided by the embodiment of the application can realize the broadband reflection-free design of the amplifier and the miniaturized design of the reflection-free amplifier.
Description
Technical Field
The application relates to the technical field of communication, in particular to a reflectionless amplifier.
Background
Conventional amplifier circuits reflect an input signal outside of their passband back to the pre-stage circuit or source, which can create additional intermodulation distortion in the pre-stage circuit, particularly in the mixer and high gain amplifier, and reduce overall stability of the communication system. With the development of high data rate wireless transmission technology, the operating frequency of the communication system is higher and higher, and the requirement of system stability is also more stringent. The non-reflection circuit will not reflect the out-of-band signal back to the pre-stage circuit or the signal source, so the above problems can be avoided.
Fig. 1 is a schematic diagram of a prior art reflectionless amplifier, IN fig. 1, IN represents a signal input terminal, OUT represents a signal output terminal, isolator represents an Isolator, and BPF represents a bandpass filter. The scheme is characterized in that an isolator is added in front of a circuit with a band-pass response, an out-of-band reflection signal of the band-pass filter is reversely isolated by the isolator and cannot be reflected back to a signal source, and an in-band signal of the band-pass filter reaches an output end. However, the non-reflection performance of the solution depends on the performance of the isolator, so that in order to realize broadband non-reflection, the isolator must meet the requirements of broadband and high isolation, and the design difficulty is greatly increased. Meanwhile, the scheme is complex, has large loss and is inconvenient for miniaturization integration.
FIG. 2 is a schematic diagram of another reflectionless amplifier provided IN the prior art, IN FIG. 1, IN represents a signal input, OUT represents a signal output, lambda/4 represents a quarter-wavelength impedance transformation line, BPF represents a bandpass filter, BSF represents a bandstop filter, Z L Representing the load resistance. The scheme uses an extra signal branch to conduct and dissipate the out-of-band reflected signal to the load resistor Z L . The signal branch is routed by quarter wavelength impedance transformation line lambda/4 and load resistor Z L And the band stop filter BSF. The center frequency of the BSF stop band of the band-stop filter is the same as the center frequency of the passband of the main signal path, and the bandwidths are the same. Therefore, under the passband of the main signal, the BSF theoretically presents zero impedance characteristics, and after passing through the quarter-wavelength impedance transformation line λ/4, the signal branch presents high impedance characteristics, and at this time, the branch has no influence on the passband signal of the main signal path. In the stop band of the main signal path, a band stop filter BSF and a load resistor Z L The network of the common components exhibits matching characteristics, in which case the out-of-band signal is conducted via the branch and dissipated in the load resistor Z L . Thus, the passband signal is transmitted to the signal output, and the stopband signal is dissipated at the load resistor rather than being reflected back to the pre-stage circuit. However, this solution is complex and the quarter-wavelength impedance transformation line λ/4 is difficult to integrate. Meanwhile, the scheme requires that the band-pass filter characteristic of the main signal path and the band-stop filter characteristic of the branch circuit are the same (the same center frequency and the same bandwidth), is difficult to realize under the wide-frequency working condition, and is difficult to apply in a broadband system due to the inherent narrow-band working characteristic of the quarter impedance transformation line lambda/4.
Disclosure of Invention
The embodiment of the application provides a reflectionless amplifier, which is beneficial to solving the problem that the reflectionless amplifier in the prior art cannot realize broadband and miniaturization.
In a first aspect, an embodiment of the present application provides a reflectionless amplifier, where the reflectionless amplifier is a single-ended reflectionless amplifier, and the single-ended reflectionless amplifier includes a high-frequency signal absorption network, a low-frequency signal absorption network, and a passband signal amplifier;
the passband signal amplifier is used for amplifying passband signals, the passband signals are signals which are amplified by the amplifier according to the design, and the passband signal amplifier further comprises a passband signal frequency selection network, wherein the passband signal frequency selection network is used for selecting frequencies and filtering the amplified passband signals;
the high-frequency signal absorption network is used for absorbing high-frequency signals in input signals, and the high-frequency input signals are input signals with signal frequencies higher than those of the passband signals;
the low-frequency signal absorption network is used for absorbing low-frequency signals in input signals, and the low-frequency input signals are input signals with signal frequencies lower than those of the passband signals.
Preferably, the high frequency signal absorbing network comprises an inductance L 1 -L n Transistor M 1 -M n And a blocking capacitor C, the inductance L 1 -L n In series in turn, the inductance L 1 Away from inductance L 2 One end of (2) is connected with the signal input end, inductance L k The output terminal of (a) is connected with the transistor M k Gate of the transistor M k The source of the transistor M is grounded k The drain electrode of the capacitor is separated from the direct current power supply through the blocking capacitor C, wherein k is more than or equal to 1 and less than or equal to n, and n is more than or equal to 2;
the passband signal amplifier comprises an inductance L m And transistor M m The inductance L m Is connected with one end of the inductor L n Connected with the inductor L m Is connected to the other end of the transistor M m A gate, the transistor M m The source of the transistor M is grounded m Is connected with the signal output end by the drain electrode of the transistor,the signal output end and the blocking capacitor C are far away from the transistor M 1 -M n Is connected to one end of
The low-frequency signal absorption network comprises an inductor L connected in series z And a load resistance Z L The inductance L z Away from the load resistor Z L One end of (a) is connected with the inductance L m Away from the inductance L n Is provided.
Preferably, the inductance L m Through inductance with said transistor M m Is connected to the gate of (c).
Preferably, the blocking capacitor C is connected to the dc power supply through an inductance, and the inductance is configured to achieve passband signal frequency selection.
Preferably, the inductance L z Is configured to isolate the passband signal.
Preferably, n.gtoreq.5.
In a second aspect, embodiments of the present application provide a reflectionless amplifier, which is a differential reflectionless amplifier, comprising two single-ended reflectionless amplifiers according to any one of claims 1-6 for processing positive and negative differential signals, respectively.
Preferably, the signal output ends of the two single-ended reflectionless amplifiers are further provided with a differential transformer as a passband signal frequency selection network.
The scheme provided by the embodiment of the application can realize the broadband reflection-free design of the amplifier and the miniaturized design of the reflection-free amplifier, and can realize the frequency selection function of the passband signal.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are required to be used in the description of the embodiments or the prior art will be briefly described below, and it will be obvious to those skilled in the art that other drawings can be obtained from these drawings without inventive effort.
FIG. 1 is a schematic diagram of a prior art reflectionless amplifier;
FIG. 2 is a schematic diagram of another reflectionless amplifier provided in the prior art;
FIG. 3 is a schematic diagram of a reflectionless amplifier according to an embodiment of the present application;
FIG. 4 is a schematic diagram of a single-ended reflectionless amplifier according to an embodiment of the present application;
FIG. 5 is a schematic diagram of a differential reflectionless amplifier according to an embodiment of the present application;
FIG. 6 is a schematic diagram of simulation results of a single-ended reflectionless amplifier according to an embodiment of the present application;
fig. 7 is a schematic diagram of a simulation result of a differential reflectionless amplifier according to an embodiment of the present application.
Detailed Description
In order to make the technical solution of the present application better understood by those skilled in the art, the technical solution of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present application without making any inventive effort, shall fall within the scope of the present application.
Aiming at the problem that the reflectionless amplifier in the prior art cannot realize broadband and miniaturization, the embodiment of the application provides the reflectionless amplifier. Fig. 3 is a schematic diagram of a reflectionless amplifier according to an embodiment of the present application, and as shown in fig. 3, the reflectionless amplifier according to an embodiment of the present application includes a high-frequency signal absorption network, a low-frequency signal absorption network, and a passband signal amplifier; the passband signal amplifier is used for amplifying passband signals, and the passband signals are signals which are amplified by the amplifier according to the design; the high-frequency signal absorption network is used for eliminating high-frequency signals in input signals, and the high-frequency input signals are input signals with signal frequencies higher than those of the passband signals; the low-frequency signal absorption network is used for eliminating low-frequency signals in input signals, and the low-frequency input signals are input signals with signal frequencies lower than those of the passband signals.
In order to facilitate a better understanding of the present technical solution, a detailed description is provided below in conjunction with specific circuit diagrams.
Fig. 4 is a schematic diagram of a single-ended reflectionless amplifier according to an embodiment of the present application, as shown in fig. 4, in an alternative embodiment of the present application, the high-frequency signal absorption network includes an inductance L 1 -L n Transistor M 1 -M n And a blocking capacitor C, the inductance L 1 -L n In series in turn, the inductance L 1 Away from inductance L 2 One end of (2) is connected with the signal input end, inductance L k The output terminal of (a) is connected with the transistor M k Gate of the transistor M k The source of the transistor M is grounded k The drain electrode of the capacitor is separated from the direct current power supply through the blocking capacitor C, wherein k is more than or equal to 1 and less than or equal to n, and n is more than or equal to 2.
The passband signal amplifier comprises an inductance L m And transistor M m The inductance L m Is connected with one end of the inductor L n Connected with the inductor L m Is connected to the other end of the transistor M m A gate, the transistor M m The source of the transistor M is grounded m A drain electrode of the capacitor is connected with a signal output end which is far away from the transistor M with the blocking capacitor C 1 -M n Is connected to one end of the housing.
The low-frequency signal absorption network comprises an inductor L connected in series z And a load resistance Z L The inductance L z Away from the load resistor Z L One end of (a) is connected with the inductance L m Away from the inductance L n Is provided.
It should be noted that the inductance L 1 -L n Representing a plurality of inductances, transistor M 1 -M n Representing a plurality of transistors. For example, when n=2, two inductors and two transistors are represented, respectively, as inductor L 1 、L 2 Transistor M 1 、M 2 The method comprises the steps of carrying out a first treatment on the surface of the When n=3, three inductors and three transistors are represented, respectively, as inductorsL 1 、L 2 、L 3 Transistor M 1 、M 2 、M 3 . In the embodiment of the application, the reflection-free effect with different characteristics can be realized by adjusting the number of stages n and the sizes of the transistors and the inductors in each stage, wherein the larger n is, the higher the reflection-free coverage frequency is. It should be noted that the embodiment of the present application is directed to the inductor L 1 -L n And transistor M 1 -M n The number of (3) is not particularly limited, and those skilled in the art can select according to actual needs, and they should fall within the scope of the present application. In an embodiment of the application, n is not less than 2, preferably n is not less than 5.
In the embodiment of the application, the signal input end inputs a signal, and the low-frequency signal in the input signal can pass through the inductor L 1 -L n Inductance L m And inductance L z Composed of inductive chains and dissipated in the load resistor Z L On the other hand, therefore, the inductance L z Is configured to isolate the passband signal. At the same time, the high-frequency signal in the input signal is transmitted and dissipated in the inductor L 1 -L n And transistor M 1 -M n In the high-frequency signal absorption network, the transistor M 1 -M n The drain electrode of the capacitor is isolated from the direct current power supply through a blocking capacitor C, so that no power consumption is generated and no amplification effect is generated on signals. Those skilled in the art can connect the drains of the transistors M1-Mn to ground according to actual needs, or replace the transistors M1-Mn with capacitors, resistors or a combination thereof to realize the high-frequency signal absorption function, which falls within the protection scope of the present application. In an embodiment of the application, n is not less than 2, preferably n is not less than 5. Passband signal in the input signal is passed through transistor M m The amplified signal reaches the signal output end, and the center frequency of the passband is determined by the transistor size and the corresponding input matching network.
In an alternative embodiment, the inductance L m Through inductance with said transistor M m The grid electrode of the DC blocking capacitor C is connected with a DC power supply through an inductor so as to achieve better amplification effect and frequency selection characteristic.
The scheme provided by the embodiment of the application can realize the broadband reflection-free design of the amplifier and the miniaturized design of the reflection-free amplifier.
Based on the single-ended reflectionless amplifier 100, the embodiment of the present application further provides a differential reflectionless amplifier, and fig. 5 is a schematic diagram of the differential reflectionless amplifier according to the embodiment of the present application, as shown in fig. 5, the differential reflectionless amplifier includes two single-ended reflectionless amplifiers 100, and the two single-ended reflectionless amplifiers 100 are used for respectively processing positive and negative differential signals. In an alternative embodiment, the signal outputs of the two single-ended reflectionless amplifiers 100 are also configured with a differential transformer 200 to further reduce the physical size of the circuit.
For convenience of explanation, in fig. 5, input+ and input-represent input ports of positive and negative differential signals, respectively, and output+ and output-represent output ports of positive and negative differential signals, respectively. For convenience of distinction, on the input + side, all components are added with "+", e.g., L 1 +、M 1 ++, c+, etc.; on the input side, all components add "-", e.g., L 1 -、M 1 -, C-, etc.
Based on the technical scheme, the single-ended and differential broadband reflectionless amplifier is realized by using a CMOS process design, and the simulation results are shown in fig. 6 and 7. As can be seen in fig. 6 and 7, the single-ended, differential, reflectionless amplifier designed using this scheme has a passband center frequency of 7.5GHz, and can achieve return loss (|s11|) lower than-15 dB and-10 dB at DC-51GHz and DC-60GHz, respectively, effectively reducing out-of-band reflected signals.
It should be noted that in this document, relational terms such as "first" and "second" and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The foregoing is only a specific embodiment of the application to enable those skilled in the art to understand or practice the application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
The same or similar parts between the various embodiments in this specification are referred to each other. In particular, for the terminal embodiment, since it is substantially similar to the method embodiment, the description is relatively simple, and reference should be made to the description in the method embodiment for relevant points.
The embodiments of the present application described above do not limit the scope of the present application.
Claims (6)
1. A reflectionless amplifier, characterized in that the reflectionless amplifier is a single-ended reflectionless amplifier, and the single-ended reflectionless amplifier comprises a high-frequency signal absorption network, a low-frequency signal absorption network and a passband signal amplifier;
the passband signal amplifier is used for amplifying passband signals, the passband signals are signals which are amplified by the amplifier according to the design, and the passband signal amplifier further comprises a passband signal frequency selection network, wherein the passband signal frequency selection network is used for selecting frequencies and filtering the amplified passband signals;
the high-frequency signal absorption network is used for absorbing high-frequency signals in input signals, and the high-frequency signals are input signals with signal frequencies higher than those of the passband signals;
the low-frequency signal absorption network is used for absorbing low-frequency signals in input signals, and the low-frequency signals are input signals with signal frequencies lower than those of the passband signals;
the high-frequency signal absorption network comprises an inductance L 1 -L n Transistor M 1 -M n And a blocking capacitor C, the inductance L 1 -L n In series in turn, the inductance L 1 Away from inductance L 2 One end of (2) is connected with the signal input end, inductance L k The output terminal of (a) is connected with the transistor M k Gate of the transistor M k The source of the transistor M is grounded k The drain electrode of the capacitor is separated from the direct current power supply through the blocking capacitor C, wherein k is more than or equal to 1 and less than or equal to n, and n is more than or equal to 2;
the passband signal amplifier comprises an inductance L m And transistor M m The inductance L m Is connected with one end of the inductor L n Connected with the inductor L m Is connected to the other end of the transistor M m A gate, the transistor M m The source of the transistor M is grounded m A drain electrode of the capacitor is connected with a signal output end which is far away from the transistor M with the blocking capacitor C 1 -M n Is connected with one end of the connecting rod;
the low-frequency signal absorption network comprises an inductor L connected in series z And a load resistance Z L The inductance L z Away from the load resistor Z L One end of (a) is connected with the inductance L m Away from the inductance L n Is provided.
2. The reflectionless amplifier of claim 1, wherein the inductance L m Through inductance with said transistor M m Is connected to the gate of (c).
3. The reflectionless amplifier of claim 1, wherein the dc blocking capacitor C is connected to a dc power supply through an inductance sized to achieve passband signal frequency selection.
4. The reflectionless amplifier of claim 1, wherein the inductance L z Is configured to isolate the passband signal.
5. A reflectionless amplifier, characterized in that it is a differential reflectionless amplifier comprising two reflectionless amplifiers according to any one of claims 1-4 for processing respectively positive and negative differential signals.
6. The reflectionless amplifier of claim 5, wherein the signal outputs of the two reflectionless amplifiers are further configured with a differential transformer configured to perform a passband signal frequency selection function.
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| CN202011036651.8A CN112152579B (en) | 2020-09-27 | 2020-09-27 | Reflection-free amplifier |
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| CN202011036651.8A CN112152579B (en) | 2020-09-27 | 2020-09-27 | Reflection-free amplifier |
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| CN112152579B true CN112152579B (en) | 2023-10-10 |
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