CN112152579A - Non-reflection amplifier - Google Patents
Non-reflection amplifier Download PDFInfo
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- CN112152579A CN112152579A CN202011036651.8A CN202011036651A CN112152579A CN 112152579 A CN112152579 A CN 112152579A CN 202011036651 A CN202011036651 A CN 202011036651A CN 112152579 A CN112152579 A CN 112152579A
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- amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/4508—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The embodiment of the application discloses a reflection-free amplifier, which is characterized in that the reflection-free amplifier is a single-ended or differential reflection-free amplifier, and comprises a high-frequency signal absorption network, a low-frequency signal absorption network and a passband signal amplifier; the passband signal is a signal which is amplified by an amplifier according to design requirements; the high-frequency signal absorption network is used for absorbing high-frequency signals in input signals, and the high-frequency signals are input signals with signal frequency higher than the passband signals; the low-frequency signal absorption network is used for absorbing low-frequency signals in input signals, and the low-frequency input signals are input signals with signal frequency lower than the passband signals. By adopting the scheme provided by the embodiment of the application, the broadband reflection-free design of the amplifier and the miniaturization design of the reflection-free amplifier can be realized.
Description
Technical Field
The present application relates to the field of communications technologies, and in particular, to a reflectionless amplifier.
Background
Conventional amplifier circuits reflect input signals outside their passband back to the front-end circuitry or signal source, which reflected signals can cause additional intermodulation distortion in the front-end circuitry, particularly mixers and high-gain amplifiers, and reduce the overall stability of the communication system. With the development of high data rate wireless transmission technology, the operating frequency of a communication system is higher and higher, and the requirement for system stability is more and more stringent. The non-reflection circuit will not reflect the out-of-band signal back to the front stage circuit or the signal source, so the above problem can be avoided.
Fig. 1 is a schematic diagram of a prior art reflectionless amplifier, IN which IN fig. 1 denotes a signal input terminal, OUT denotes a signal output terminal, Isolator denotes an Isolator, and BPF denotes a band pass filter. According to the scheme, an isolator is additionally arranged at the front stage of a circuit with a band-pass response, an out-of-band reflected signal of a band-pass filter is reversely isolated by the isolator and cannot be reflected back to a signal source, and an in-band signal of the band-pass filter reaches an output end. However, the non-reflection performance of the solution depends on the performance of the isolator, and in order to achieve broadband non-reflection, the isolator must meet the requirements of broadband and high isolation, which greatly increases the design difficulty. Meanwhile, the scheme is complex, high in loss and inconvenient to miniaturize and integrate.
FIG. 2 is a schematic diagram of another reflectionless amplifier provided IN the prior art, IN FIG. 1, IN denotes a signal input terminal, OUT denotes a signal output terminal, λ/4 denotes a quarter-wave impedance transformation line, BPF denotes a band-pass filter, BSF denotes a band-stop filter, ZLRepresenting the load resistance. The scheme utilizes an additional signal branch to conduct and dissipate the out-of-band reflected signal to the load resistor ZL. The signal branch is connected with a quarter-wavelength impedance transformation line lambda/4 and a load resistor ZLAnd a band stop filter BSF. The center frequency of the stop band of the BSF is the same as the center frequency of the pass band of the main signal channel, and the bandwidth is also the same. Therefore, in the main signal pass band, theoretically, the band-stop filter BSF presents a zero impedance characteristic, and after passing through the quarter-wavelength impedance transformation line λ/4, the signal branch presents a high impedance characteristic, and at this time, the branch has no influence on the pass band signal of the main signal pass band. At the stop band of the main signal path, the band stop filter BSF and the load resistor ZLThe networks formed by the two circuits exhibit matching characteristics, and the out-of-band signal is conducted through the branch circuit and dissipated to the load resistor ZL. Therefore, the passband signal can be transmitted to the signal output end, and the stopband signal is dissipatedThe load resistance is not reflected back to the front stage circuit. However, this solution is complex and the quarter-wave impedance transformation line λ/4 is difficult to integrate. Meanwhile, the scheme requires that the bandpass filter characteristic of the main signal path is the same as the bandstop filter characteristic of the branch path (the same center frequency and the same bandwidth), and is difficult to realize under the broadband working condition, and the scheme is difficult to apply in a broadband system due to the inherent narrow-band working characteristic of the quarter impedance transformation line lambda/4.
Disclosure of Invention
The embodiment of the application provides a non-reflection amplifier, which is beneficial to solving the problem that the non-reflection amplifier in the prior art cannot realize broadband and miniaturization.
In a first aspect, an embodiment of the present application provides a reflectionless amplifier, where the reflectionless amplifier is a single-ended reflectionless amplifier, and the single-ended reflectionless amplifier includes a high-frequency signal absorption network, a low-frequency signal absorption network, and a passband signal amplifier;
the passband signal amplifier is used for amplifying passband signals, the passband signals are signals which are amplified by the amplifier according to design requirements, the passband signal amplifier further comprises a passband signal frequency selection network, and the passband signal frequency selection network is used for performing frequency selection and filtering on the amplified passband signals;
the high-frequency signal absorption network is used for absorbing high-frequency signals in input signals, and the high-frequency input signals are input signals with signal frequency higher than the passband signals;
the low-frequency signal absorption network is used for absorbing low-frequency signals in input signals, and the low-frequency input signals are input signals with signal frequency lower than the passband signals.
Preferably, the high frequency signal absorbing network comprises an inductance L1-LnTransistor M1-MnAnd a DC blocking capacitor C, the inductor L1-LnAre sequentially connected in series, the inductor L1Away from the inductance L2One end of which is connected with a signal input end and an inductor LkIs connected with the transistor MkThe transistor M, the transistor MkIs connected to ground and is,the transistor MkThe drain electrode of the capacitor is separated from the direct current power supply through the blocking capacitor C, wherein k is more than or equal to 1 and less than or equal to n, and 2 is more than or equal to n;
the passband signal amplifier comprises an inductor LmAnd a transistor MmSaid inductance LmAnd the inductance LnAre connected with the inductor LmIs connected to the transistor MmA gate electrode of the transistor MmIs grounded, the transistor MmIs connected with a signal output end, the signal output end and the blocking capacitor C are far away from the transistor M1-MnIs connected to one end of
The low-frequency signal absorption network comprises inductors L connected in serieszAnd a load resistance ZLSaid inductance LzAway from the load resistance ZLOne end of is connected with the inductor LmAway from the inductor LnTo one end of (a).
Preferably, the inductance LmIs connected with the transistor M through an inductormAre connected.
Preferably, the dc blocking capacitor C is connected to the dc power supply through an inductor, and the inductor is configured to implement passband signal frequency selection.
Preferably, the inductance LzIs configured to isolate passband signals.
Preferably, n.gtoreq.5.
In a second aspect, embodiments of the present application provide a reflectionless amplifier, which is a differential reflectionless amplifier, and which includes two single-ended reflectionless amplifiers as claimed in any of claims 1 to 6, for processing positive and negative differential signals, respectively.
Preferably, the signal output ends of the two single-ended reflection-free amplifiers are further provided with differential transformers as passband signal frequency selection networks.
By adopting the scheme provided by the embodiment of the application, the broadband reflection-free design of the amplifier and the miniaturization design of the reflection-free amplifier can be realized, and meanwhile, the passband signal frequency selection function can be realized.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic diagram of a prior art reflectionless amplifier;
FIG. 2 is a schematic diagram of another reflectionless amplifier provided in the prior art;
fig. 3 is a schematic diagram of a reflectionless amplifier according to an embodiment of the present application;
fig. 4 is a schematic diagram of a single-ended reflectionless amplifier according to an embodiment of the present application;
fig. 5 is a schematic diagram of a differential reflectionless amplifier according to an embodiment of the present application;
fig. 6 is a schematic diagram of simulation results of a single-ended reflectionless amplifier according to an embodiment of the present application;
fig. 7 is a schematic diagram of simulation results of a differential reflectionless amplifier according to an embodiment of the present application.
Detailed Description
In order to make those skilled in the art better understand the technical solutions in the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The embodiment of the application provides a non-reflection amplifier, aiming at the problem that the non-reflection amplifier in the prior art cannot realize broadband and miniaturization. Fig. 3 is a schematic diagram of a reflection-free amplifier according to an embodiment of the present disclosure, and as shown in fig. 3, the reflection-free amplifier according to the embodiment of the present disclosure includes a high-frequency signal absorbing network, a low-frequency signal absorbing network, and a passband signal amplifier; the passband signal amplifier is used for amplifying passband signals, and the passband signals are signals which are amplified by the amplifier according to design requirements; the high-frequency signal absorption network is used for eliminating a high-frequency signal in an input signal, and the high-frequency input signal is an input signal with a signal frequency higher than the passband signal; the low-frequency signal absorption network is used for eliminating low-frequency signals in input signals, and the low-frequency input signals are input signals with signal frequency lower than the passband signals.
In order to facilitate a better understanding of the present solution for a person skilled in the art, the following detailed description is given with reference to specific circuit diagrams.
Fig. 4 is a schematic diagram of a single-ended reflectionless amplifier according to an embodiment of the present application, and as shown in fig. 4, in an alternative embodiment of the present application, the high-frequency signal absorbing network includes an inductor L1-LnTransistor M1-MnAnd a DC blocking capacitor C, the inductor L1-LnAre sequentially connected in series, the inductor L1Away from the inductance L2One end of which is connected with a signal input end and an inductor LkIs connected with the transistor MkThe transistor M, the transistor MkIs grounded, the transistor MkThe drain electrode of the capacitor is separated from the direct current power supply through the blocking capacitor C, wherein k is more than or equal to 1 and less than or equal to n, and 2 is more than or equal to n.
The passband signal amplifier comprises an inductor LmAnd a transistor MmSaid inductance LmAnd the inductance LnAre connected with the inductor LmIs connected to the transistor MmA gate electrode of the transistor MmIs grounded, the transistor MmIs connected with a signal output end, the signal output end and the blocking capacitor C are far away from the transistor M1-MnAre connected at one end.
The low-frequency signal absorption network comprises inductors L connected in serieszAnd a load resistance ZLSaid inductance LzAway from the loadResistance ZLOne end of is connected with the inductor LmAway from the inductor LnTo one end of (a).
It is noted that the inductance L1-LnRepresenting a plurality of inductors, transistors M1-MnA plurality of transistors is shown. For example, when n is 2, two inductors and two transistors, each of which is an inductor L, are provided1、L2Transistor M1、M2(ii) a When n is 3, three inductors and three transistors, each inductor L, are shown1、L2、L3Transistor M1、M2、M3. In the embodiment of the application, the non-reflection effect with different characteristics can be realized by adjusting the number n of the stages and the sizes of the transistors and the inductors in each stage, wherein the larger n is, the higher the non-reflection covering frequency is. It should be noted that the embodiments of the present application are directed to the inductor L1-LnAnd a transistor M1-MnThe number of the above-mentioned components is not particularly limited, and those skilled in the art can select the components according to actual needs, and all the components should fall within the scope of the present application. In the embodiments of the present application, n.gtoreq.2, preferably n.gtoreq.5.
In the embodiment of the application, the signal input end inputs signals, and low-frequency signals in the input signals can pass through the inductor L1-LnInductor LmAnd an inductance LzThe inductance chain is formed and dissipated in a load resistance ZLUpper, therefore, the inductance LzIs configured to isolate passband signals. Meanwhile, high-frequency signals in the input signals are transmitted and dissipated in the inductor L1-LnAnd a transistor M1-MnIn a built-up high-frequency signal sink network, a transistor M1-MnThe drain electrode of the switch is isolated from the direct current power supply through a direct current blocking capacitor C, so that no power consumption is generated and no amplification effect is generated on signals. Those skilled in the art can connect the drain of the transistor M1-Mn to ground or replace the transistor M1-Mn with a capacitor, a resistor or a combination thereof to achieve the high frequency signal absorption function according to actual requirements, which all fall within the scope of the present application. In the embodiment of the present application,n.gtoreq.2, preferably n.gtoreq.5. Pass band signal in input signal passes through transistor MmAfter amplification, the signal reaches the signal output end, and the center frequency of the pass band is determined by the size of the transistor and the corresponding input matching network.
In an alternative embodiment, the inductance LmIs connected with the transistor M through an inductormThe blocking capacitor C is connected with a direct current power supply through an inductor so as to realize better amplification effect and frequency selection characteristic.
By adopting the scheme provided by the embodiment of the application, the broadband reflection-free design of the amplifier and the miniaturization design of the reflection-free amplifier can be realized.
Based on the single-ended reflectionless amplifier 100, an embodiment of the present application further provides a differential reflectionless amplifier, and fig. 5 is a schematic diagram of a differential reflectionless amplifier provided in an embodiment of the present application, as shown in fig. 5, the differential reflectionless amplifier includes two single-ended reflectionless amplifiers 100, where the two single-ended reflectionless amplifiers 100 are configured to process positive and negative differential signals, respectively. In an alternative embodiment, the signal outputs of the two single-ended reflectionless amplifiers 100 are further configured with a differential transformer 200 to further reduce the physical size of the circuit.
For convenience of explanation, in fig. 5, input + and input-represent input ports of positive and negative differential signals, respectively, and output + and output-represent output ports of the positive and negative differential signals, respectively. For ease of distinction, on the + input side, all components are added with a "+", e.g., L1+、M1+, C +, etc.; on the input-side, all components are added with "-", e.g., L1-、M1-, C-, etc.
Based on the technical scheme, the single-ended and differential broadband reflection-free amplifiers are realized by using CMOS process design, and simulation results are shown in FIGS. 6 and 7. As can be seen in FIGS. 6 and 7, the single-ended, differential reflectionless amplifier designed by using the scheme has a passband center frequency of 7.5GHz, and can achieve return loss (| S11|) lower than-15 dB and-10 dB at DC-51GHz and DC-60GHz respectively, and effectively reduce out-of-band reflection signals.
It is noted that, in this document, relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The foregoing are merely exemplary embodiments of the present invention, which enable those skilled in the art to understand or practice the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
The same and similar parts in the various embodiments in this specification may be referred to each other. Especially, for the terminal embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant points can be referred to the description in the method embodiment.
The above-described embodiments of the present application do not limit the scope of the present application.
Claims (7)
1. A reflectionless amplifier, wherein the reflectionless amplifier is a single-ended reflectionless amplifier, the single-ended reflectionless amplifier comprising a high frequency signal absorbing network, a low frequency signal absorbing network, and a passband signal amplifier;
the passband signal amplifier is used for amplifying passband signals, the passband signals are signals which are amplified by the amplifier according to design requirements, the passband signal amplifier further comprises a passband signal frequency selection network, and the passband signal frequency selection network is used for performing frequency selection and filtering on the amplified passband signals;
the high-frequency signal absorption network is used for absorbing high-frequency signals in input signals, and the high-frequency input signals are input signals with signal frequency higher than the passband signals;
the low-frequency signal absorption network is used for absorbing low-frequency signals in input signals, and the low-frequency input signals are input signals with signal frequency lower than the passband signals.
2. The reflectionless amplifier of claim 1,
the high-frequency signal absorbing network comprises an inductor L1-LnTransistor M1-MnAnd a DC blocking capacitor C, the inductor L1-LnAre sequentially connected in series, the inductor L1Away from the inductance L2One end of which is connected with a signal input end and an inductor LkIs connected with the transistor MkThe transistor M, the transistor MkIs grounded, the transistor MkThe drain electrode of the capacitor is separated from the direct current power supply through the blocking capacitor C, wherein k is more than or equal to 1 and less than or equal to n, and 2 is more than or equal to n;
the passband signal amplifier comprises an inductor LmAnd a transistor MmSaid inductance LmAnd the inductance LnAre connected with the inductor LmIs connected to the transistor MmA gate electrode of the transistor MmIs grounded, the transistor MmIs connected with a signal output end, the signal output end and the blocking capacitor C are far away from the transistor M1-MnOne end of the two ends are connected;
the low-frequency signal absorption network comprises inductors L connected in serieszAnd a load resistance ZLSaid inductance LzAway from the load resistance ZLOne end of is connected with the inductor LmAway from the inductor LnTo one end of (a).
3. The reflectionless amplifier of claim 2, wherein the inductance LmIs connected with the transistor M through an inductormAre connected.
4. The reflectionless amplifier of claim 2, wherein the dc blocking capacitor C is coupled to a dc power supply via an inductor sized to enable passband signal frequency selection.
5. The reflectionless amplifier of claim 2, wherein the inductance LzIs configured to isolate passband signals.
6. A reflectionless amplifier, wherein the reflectionless amplifier is a differential reflectionless amplifier comprising two single-ended reflectionless amplifiers of any of claims 1-5, the two single-ended reflectionless amplifiers configured to process positive and negative differential signals, respectively.
7. The reflectionless amplifier of claim 6, wherein the signal outputs of the two single-ended reflectionless amplifiers are further configured with differential transformers configured to implement passband signal selection.
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Cited By (1)
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| CN112953399A (en) * | 2021-01-27 | 2021-06-11 | 电子科技大学 | Power amplifier with high back-off efficiency |
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