CN108493311A - A kind of deep ultraviolet LED epitaxial chips encapsulating structure and preparation method - Google Patents
A kind of deep ultraviolet LED epitaxial chips encapsulating structure and preparation method Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
Abstract
The invention discloses a kind of deep ultraviolet LED epitaxial chips encapsulating structure and preparation methods, wherein encapsulating structure includes across passivation insulation, conductive film contact layer is to the first groove of heavily doped N-type AlGaN layer and across passivation insulation, second groove of the conductive film contact layer to current extending, in first groove, the first metal layer of bottom is provided in second groove, second metal layer, first separation layer of side wall, second separation layer, and the N-type interior metal contact layer and p-type interior metal contact layer of filling, it is connect with the N-type electrode and P-type electrode for being arranged in table top.It etches to form groove by portion in the chip, reduces the etching to light-emitting zone and damage, increase efficient lighting area；The setting of groove increases the current path inside epitaxial layer, plays the role of shunting, and the setting of metal layer and interior metal contact layer shortens heat-transfer path, reduces thermal resistance, improves radiating efficiency.
Description
Technical field
The present invention relates to semiconductor light emitting element device packaging technique field, more particularly to a kind of deep ultraviolet LED epitaxial chips
Encapsulating structure and preparation method.
Background technology
Ultraviolet light, as one kind of electromagnetic wave, wavelength is less than visible light, and range is between 10-400 nanometers (nm), packet
It includes：UV-V (10-200 nanometers of wavelength), UV-C (200-280 nanometers of wavelength), UV-B (280-315 nanometers of wavelength),
UV-A (320-400 nanometers), medium wavelength is less than 320 nanometers of ultraviolet light, also referred to as " deep UV ".
Currently used deep ultraviolet light source compares, and deep ultraviolet LED light source is a kind of cold light source, reason small with heat radiation
It is long by service life, efficiently, the advantages that energy is high, irradiation brightness is uniform, reliability is high and asepsis environment-protecting, medical treatment detection,
The fields such as sterilizing, printing, biochemistry detection, the storage of highdensity information and secure communication are worth with major application.
But the Sapphire Substrate, each epitaxial layer and contact electrode etc. in existing deep ultraviolet LED epitaxial chips make
With material internal, there are face crack, residual stress and crystal quality caused by lattice mismatch and thermal mismatching, V-type defect are poor
The problems such as.And in the technical process such as follow-up die bond, encapsulation, that there is also deep ultraviolet LED core chip sizes is small, preparation process is complicated
Difficulty is high, resistance to big pulse current impact capacity is weak, voltage surge strike is big, light extraction efficiency is low and static discharge harm etc. is asked
Topic so that deep ultraviolet LED chip yield rate is relatively low, and adaptive capacity to environment is poor, and reliability cannot be guaranteed, and is unfavorable for advising greatly
The application of mould.
Invention content
The present invention provides a kind of deep ultraviolet LED epitaxial chips encapsulating structure and preparation methods, reduce to light-emitting zone
Etching and damage, increase efficient lighting area；The current path inside epitaxial layer is increased, the work of shunting is played
With shortening heat-transfer path, reduce thermal resistance, improve radiating efficiency.
In order to solve the above technical problems, an embodiment of the present invention provides a kind of deep ultraviolet LED epitaxial chip encapsulating structures, packet
It includes Sapphire Substrate, set gradually BN buffer layers, AlN layers, AlN/AlGaN superlattices based on the Sapphire Substrate side
Layer, heavily doped N-type AlGaN layer, lightly doped n type AlGaN layer, AlGaN/AlGaN multi-quantum well active regions, the resistance of p-type AlGaN electronics
Barrier, p-type AlGaN transition zones, p-type GaN contact layers, current extending, reflecting layer, conductive film contact layer and setting are in platform
The passivation insulation in face and side wall further includes across the passivation insulation, the conductive film contact layer to the heavy doping N
First groove of type AlGaN layer and across the passivation insulation, the conductive film contact layer to the current extending
Second groove is provided in the N-type of the first metal layer of bottom, the first separation layer of side wall and filling in first groove
Portion's metal contact layer, the first metal layer is by the N-type interior metal contact layer and the N-type electrode company in table top is arranged
It connects, the p-type interior metal that the second metal layer of bottom, the second separation layer of side wall and filling are provided in second groove connects
Contact layer, the second metal layer are connect by the p-type interior metal contact layer with the P-type electrode for being arranged in the table top.
Wherein, further include be arranged outside the conductive film contact layer connect with the P-type electrode without with the N-type
The metal ring structure of electrode connection.
Wherein, the metal ring structure includes the unclosed endless metal lead frame surrounded by a plurality of plain conductor item,
The plain conductor item is drawn by the P-type electrode from four different directions, and is extended but be not connected to the N-type electrode,
And it is symmetrical about the N-type electrode.
Wherein, the thickness of the plain conductor item is about 15nm~20nm.
Wherein, further include that the gully shape structure for connecting side with the BN buffer layers in the Sapphire Substrate is set.
Wherein, first separation layer, second separation layer thickness be 5nm~10nm.
Wherein, further include the baseplate heat sink structure being arranged in the other side of the Sapphire Substrate.
In addition to this, the embodiment of the present invention additionally provides a kind of deep ultraviolet LED epitaxial structure preparation method, including：
Step 1, deep ultraviolet LED chip main body is prepared, the deep ultraviolet LED chip main body includes Sapphire Substrate, successively
Be arranged BN buffer layers based on the Sapphire Substrate side, AlN layers, AlN/AlGaN superlattice layers, heavily doped N-type AlGaN
Layer, lightly doped n type AlGaN layer, AlGaN/AlGaN multi-quantum well active regions, p-type AlGaN electronic barrier layers, p-type AlGaN transition
Layer, p-type GaN contact layers, current extending, reflecting layer, conductive film contact layer and the passivation that is arranged in table top and side wall are exhausted
Edge layer；
Step 2, the passivation insulation is etched, the conductive film contact layer is formed to the heavily doped N-type AlGaN layer
First groove etches the passivation insulation, the conductive film contact layer to the current extending forms the second groove；
Step 3, in the bottom deposit the first metal layer of first groove, the first separation layer is set in side wall, and in institute
Filling N-type interior metal contact layer in the first groove is stated to set in side wall in the bottom deposit second metal layer of second groove
The first separation layer is set, and fills p-type interior metal contact layer in first groove；
Step 4, being arranged above for first groove connect with the N-type interior metal contact layer on the table top
N-type electrode, second groove is arranged above the P being connect with the p-type interior metal contact layer on the table top
Type electrode.
Wherein, after the step 4, further include：
Step 5, the becket knot being connect with the P-type electrode without being connect with the N-type electrode is set in the table top
Structure.
Wherein, after the step 5, further include：
Step 6, baseplate heat sink is set in the other side of the Sapphire Substrate.
The deep ultraviolet LED epitaxial chips encapsulating structure and preparation method that the embodiment of the present invention is provided, with the prior art
It compares, has the following advantages：
Deep ultraviolet LED epitaxial chips encapsulating structure provided in an embodiment of the present invention and preparation method, by the chip
Portion etches to form the first groove and the second groove, and in the forming process of electrode, only externally prolong layer mesa structure one is small
Subregion carries out performing etching to form groove structure on the negative direction with the epitaxial layer structure direction of growth, instead of tradition
N-type sunk area is formed in etching, is reduced the etching to light-emitting zone and damage, is relatively increased efficient lighting area；
The setting of first groove and the second groove increases the current path inside epitaxial layer, plays the role of shunting so that device
It can bear the current flowing ability of bigger, the ability of anti-high current or high current is promoted, and the reliability of device is carried
It is high；Due to being provided with metal layer and interior metal contact layer, and metal layer and interior metal in the first groove and the second groove
The higher heat-transfer capability of contact layer local shortens heat-transfer path compared with existing chip, reduces thermal resistance, improves
Radiating efficiency.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is the present invention
Some embodiments for those of ordinary skill in the art without creative efforts, can also basis
These attached drawings obtain other attached drawings.
Fig. 1 is a kind of specific implementation mode of deep ultraviolet LED epitaxial chip encapsulating structures provided in an embodiment of the present invention
Structural schematic diagram；
Fig. 2 is a kind of specific implementation mode of deep ultraviolet LED epitaxial chip encapsulating structures provided in an embodiment of the present invention
Circuit equivalent figure；
Fig. 3 is a kind of specific reality of deep ultraviolet LED epitaxial chips encapsulating structure preparation method provided in an embodiment of the present invention
Apply the step flow diagram of mode；
Fig. 4 is a kind of specific reality of deep ultraviolet LED epitaxial chips encapsulating structure preparation method provided in an embodiment of the present invention
Apply the step flow diagram of mode.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
~Fig. 4 is please referred to Fig.1, Fig. 1 is one kind of deep ultraviolet LED epitaxial chip encapsulating structures provided in an embodiment of the present invention
The structural schematic diagram of specific implementation mode；Fig. 2 is the one of deep ultraviolet LED epitaxial chip encapsulating structures provided in an embodiment of the present invention
The circuit equivalent figure of kind specific implementation mode；Fig. 3 is deep ultraviolet LED epitaxial chip encapsulating structure systems provided in an embodiment of the present invention
A kind of step flow diagram of specific implementation mode of Preparation Method；Fig. 4 is deep ultraviolet LED extensions provided in an embodiment of the present invention
A kind of step flow diagram of specific implementation mode of chip-packaging structure preparation method.
In a specific embodiment, the deep ultraviolet LED epitaxial chip encapsulating structures, including Sapphire Substrate 1, according to
The secondary BN buffer layers 2 being arranged based on 1 side of the Sapphire Substrate, AlN layers 3, AlN/AlGaN superlattice layers 4, heavily doped N-type
AlGaN layer 5, lightly doped n type AlGaN layer 6, AlGaN/AlGaN multi-quantum well active regions 7, p-type AlGaN electronic barrier layers 8, p-type
AlGaN transition zones 9, p-type GaN contact layers 10, current extending 11, reflecting layer 12, conductive film contact layer 13 and setting exist
The passivation insulation 14 of table top and side wall further includes across the passivation insulation 14, the conductive film contact layer 13 to institute
State the first groove of heavily doped N-type AlGaN layer 5 and across the passivation insulation 14, the conductive film contact layer 13 to institute
State the second groove of current extending 11, be provided in first groove the first metal layer 15 of bottom, side wall first every
Absciss layer 16 and the N-type interior metal contact layer 17 of filling, the first metal layer 15 pass through the N-type interior metal contact layer
17 connect with the N-type electrode 18 for being arranged in table top, be provided in second groove second metal layer of bottom, side wall second
The p-type interior metal contact layer of separation layer and filling, the second metal layer pass through the p-type interior metal contact layer and setting
It is connected in the P-type electrode 19 of the table top.
It is pointed out that deep ultraviolet LED epitaxial chip encapsulating structures provided by the invention, the wave-length coverage of device are big
About 200nm~280nm.
And in order to further increase the reliability of device, its antistatic capacity is improved, in one embodiment of the present of invention
In, the deep ultraviolet LED epitaxial chip encapsulating structures further include setting in 13 outside of the conductive film contact layer and the p-type
The metal ring structure 20 that electrode 19 is connected without being connect with the N-type electrode 18.
By the setting of metal ring structure, a kind of metal-oxide semiconductor (MOS) electricity with antistatic protection function is formd
Container (MOS) or complementary metal oxide semiconductor capacitor (CMOS) structure.
In the present invention, form antistatic protection function is not limited to metal ring structure 20, can also be other metals
Structure, the present invention do not limit its shape and metal material.
Generally, the metal ring structure 20 includes the unclosed endless metal conducting wire surrounded by a plurality of plain conductor item
Frame, the plain conductor item are drawn by the P-type electrode 19 from four different directions, and to the extension of the N-type electrode 18 but
It is not connected to, and symmetrical about the N-type electrode 18.
The present invention does not limit the type and quantity and size of plain conductor, the thickness of the general plain conductor item
Degree is about 15nm~20nm.
In the present invention, it is contemplated that, can be with preferred design p-type electricity the problems such as chip size, current expansion and thermal diffusivity
The number of pole 19, the arrangement mode of shape and electrode matrix generally use common LED chip in embodiments of the present invention
The number of structure, P-type electrode 19 is preferably one, and the number of N-type electrode 18 is also one, but does not do specific restriction.
The table top and side wall that passivation insulation 14 in the present invention is arranged in the LED chip epitaxial layer structure are respectively provided with
Passivation insulation 14 forms the package to LED epitaxial chip structures surface, it is therefore prevented that the appearance of leaky.The passivation is insulated
The semiconductor oxide nitride layer that layer 14 generally forms, effectively prevents the leakage current pair at outside moisture, table top and mesa sidewall
Influence caused by deep ultraviolet LED chip.The passivation insulation 14, at vertical column structure, changes on epitaxial layer structure growth direction
The current spreading problem of active area 7 in epitaxial layer structure has been apt to it, has reduced electric current pile up effect, has improved the luminous power of device.
The present invention does not limit its thickness and type, depositional mode, and the thickness of the passivation insulation 14 is generally
10nm~20nm.
Crystalline quality when being grown because of internal material in LED light source chip fabrication process to reduce is poor, thermal mismatching is answered
The defects of power and linear dislocation, improves the internal quantum efficiency and light extraction efficiency of LED chip, in one embodiment of the present of invention
In, the deep ultraviolet LED epitaxial chip encapsulating structures further include that setting connects in the Sapphire Substrate 1 and the BN buffer layers 2
Connect the gully shape structure of side.
Specifically, the Sapphire Substrate 1 is handled using miniature nano patterning template first, by mask plate into
After the process such as row etching, the class cylinder pattern that cross section is regular hexagon is formed；Again by local Evoked ptential skill
Art continues to produce nitride epitaxial layer structure in the Sapphire Substrate 1 for processing channel-type, be formed in Sapphire Substrate 1
Gully shape structure, there is certain depth and angle of inclination, and then reduce in LED light source chip fabrication process because of inside
Crystalline quality when Material growth is poor, thermal mismatch stress and the defects of linear dislocation, improves the internal quantum efficiency of LED chip
And light extraction efficiency.
The present invention does not limit Sapphire Substrate 1, the thickness of the general Sapphire Substrate 1 be about 150um~
The thickness of 200um, BN buffer layer 2 is generally 15nm~20nm, and the thickness of AlN layers 3 is generally 850nm~900nm, AlN/
The thickness of AlGaN superlattices is generally 0.75um~1.0um, the thickness of heavily doped N-type AlGaN layer 5 be generally 1.84um~
The thickness of 1.96um, lightly doped n type AlGaN layer 6 are generally 0.04um~0.16um, AlGaN/AlGaN multi-quantum well active regions 7
Thickness be generally 60nm~65nm, the thickness of p-type AlGaN electronic barrier layers 8 is generally 15nm~25nm, p-type AlGaN transition
The thickness of layer 9 is generally 40nm~60nm, and the thickness of p-type GaN contact layers 10 is generally 100nm~150nm, current extending 11
Thickness be generally 0.1um~0.15um, the thickness in reflecting layer 12 is generally 0.1um~0.15um, conductive film contact layer 13
Thickness be generally 10nm~15nm.
The present invention is not specifically limited the thickness of each layer of LED chip epitaxial structure.
During growing N-type AlGaN epitaxial layers, it is ensured that the general thickness of N-type AlGaN layer about maintains 2um's
Meanwhile by extension heavily doped N-type AlGaN layer 5 successively, and continue extraly to be provided with lightly doped n type AlGaN layer 6, and will
The thickness of lightly doped n type AlGaN layer 6 about controls within the scope of 0.04um~0.16um, due to lightly doped n type AlGaN layer 6
In the presence of, hence it is evident that increase the light output intensity of LED chip and the intensity of antistatic harm.
In grown epitaxial layer p-type AlGaN electronic barrier layers 8 successively, p-type AlGaN transition zones 9 and p-type GaN contact layers 10
When, it is grown using cryogenic conditions, can be very good to fill caused by LED light source chip material inherently characteristic
V-type defect delays the residual stress between small epitaxial material, hence it is evident that enhance LED light source core under Human Body Model or Machinery model
The antistatic striking capabilities of piece, and then improve the reliability of the quality and device of LED light source chip.
In addition, growing the reflecting layer 12 of metal material in LED epitaxial layer structures, and located using surface texture technology
The structures such as p-type AlGaN electronic barrier layers 8 are managed, the reflecting effect of light is further enhanced, light extraction efficiency are improved, wherein reflecting
The thickness of layer 12 is generally 0.1um~0.15um, and the thickness of p-type AlGaN electronic barrier layers 8 is preferably 15nm~25nm.
By the way that current extending 11 is arranged, improves the contact type between electrode and epitaxial layer internal material, effectively reduce
Contact resistance so that electron transfer rate is accelerated, and current distribution is more uniform, and then the defects of cut down hot-spot, wherein
The thickness of current extending 11 is generally 0.1um~0.15um.
Compared to more traditional low-power LED chip, LED chip provided in an embodiment of the present invention passes through high density assembled package
Mode, size is larger, the injected current density and luminous flux of LED chip is effectively increased, by greater area of
Novel metallic reflective electrodes structure and reflecting layer 12 are set at epitaxial layer mesa structure, optimize the mode of Ohmic contact
And bond strength.Specifically, the material generally by using antimony Al metal alloy as electrode contact structure, optimizes electrode
Material type between area surface and face increases effective contact area of electrode, reduces contact resistance so that electric current
Distribution and extension are more uniform.Meanwhile by the way that reflecting layer 12 is arranged so that the light sent out on epitaxial layer structure growth direction
Transmitting is concentrated after being reflected, and then improves the light extraction efficiency of LED chip.
Preferably, reflecting layer 12 be argentum reflecting layer 12, by silver atoms reduce the migration near electrode due to electronics with
And the short circuit current of diffusion and formation, and then increase luminous intensity and optical output power, it is thus also avoided that deep ultraviolet LED chip
Quick aging.
Simultaneously in the preparation process of technique, to continuing to grow with the LED epitaxial structure at the table top of epitaxial layer
The processing such as the etching of the negative direction in direction and photoetching first deposit the first gold medal at the bottom for the first groove that N-type electrode 18 connects
Belong to layer 15, then forms N-type interior metal contact layer toward deposit metal electrodes contact material inside electrode groove structure successively respectively
17 and deposition of insulative material formed the first separation layer 16；Wherein, p-type interior metal contact layer and N-type interior metal contact layer
The thickness of the separation layer on 17 surfaces is generally 5nm~10nm, i.e., described first separation layer 16, second separation layer thickness be
5nm~10nm can be prevented between the side wall of metal electrode contact structures and deep ultraviolet LED light source chip interior contact layer surface
Be in direct contact, and then formed current loop and cause short circuit problem.
It should be pointed out that p-type interior metal contact layer and P-type electrode 19 and N-type interior metal contact layer 17 and N-type
The generally meeting global formation of electrode 18, reduces technical process, and the first separation layer 16 is around corresponding internal gold with the second separation layer
Belong to contact layer setting, the present invention does not limit its material and specific deposition process.
It should be pointed out that the present invention is not specifically limited the shape and size of the first groove, the second groove, generally
The diameter of inner contact structure is respectively less than the electrode structure of epitaxial layer table top.
It is described in order to further increase its heat-sinking capability in the main body for foring LED epitaxial structure by above-mentioned processing
Deep ultraviolet LED epitaxial structure further includes the baseplate heat sink being arranged in the other side of the Sapphire Substrate 1.
It is overturn, is tipped upside down on baseplate heat sink by the way that LED epitaxial structure of the above after Passivation Treatment to be inverted,
And then complete the basic encapsulation process of LED chip.
Specifically, include mainly wiring layer, insulating layer, adhesive layer and heat sink in the baseplate heat sink.Wherein, the cloth
Line layer choosing is the eutectic solders such as Ni/Au alloys or Au/Sn, forms metal electrical connection by the solder so that LED core
Piece is coupling on baseplate heat sink；The insulating layer can select the insulating materials such as AlN substrates, Si/AlN ceramics；The bonding
Layer can select the binding materials such as conductive silver paste, silica gel；And the heat sink selection is metal Al substrates.Pass through base described above
The optimization design of plate radiator so that the heat dissipation of LED chip is more efficient.
By the description to above-mentioned deep ultraviolet LED epitaxial chip encapsulating structures provided by the invention it is found that it is with anti-
Electric leakage, luminous efficiency is high, voltage surge is small, anti-electrostatic discharging endangers small and high reliability.
In addition to this, the embodiment of the present invention additionally provides a kind of deep ultraviolet LED epitaxial structure preparation method, such as Fig. 3 and Fig. 4
It is shown, including：
Step 1, deep ultraviolet LED chip main body is prepared, the deep ultraviolet LED chip main body includes Sapphire Substrate, successively
Be arranged BN buffer layers based on the Sapphire Substrate side, AlN layers, AlN/AlGaN superlattice layers, heavily doped N-type AlGaN
Layer, lightly doped n type AlGaN layer, AlGaN/AlGaN multi-quantum well active regions, p-type AlGaN electronic barrier layers, p-type AlGaN transition
Layer, p-type GaN contact layers, current extending, reflecting layer, conductive film contact layer and the passivation that is arranged in table top and side wall are exhausted
Edge layer；
Step 2, the passivation insulation is etched, the conductive film contact layer is formed to the heavily doped N-type AlGaN layer
First groove etches the passivation insulation, the conductive film contact layer to the current extending forms the second groove；
Step 3, in the bottom deposit the first metal layer of first groove, the first separation layer is set in side wall, and in institute
Filling N-type interior metal contact layer in the first groove is stated to set in side wall in the bottom deposit second metal layer of second groove
The first separation layer is set, and fills p-type interior metal contact layer in first groove；
Step 4, being arranged above for first groove connect with the N-type interior metal contact layer on the table top
N-type electrode, second groove is arranged above the P being connect with the p-type interior metal contact layer on the table top
Type electrode.
The present invention does not do specifically the set-up mode of the first groove, the second groove and specific installation position and size
It limits.
And in order to further increase the reliability of device, its antistatic capacity is improved, in one embodiment of the present of invention
In, after the step 4, further include：
Step 5, the becket knot being connect with the P-type electrode without being connect with the N-type electrode is set in the table top
Structure.
By the setting of metal ring structure, a kind of metal-oxide semiconductor (MOS) electricity with antistatic protection function is formd
Container (MOS) or complementary metal oxide semiconductor capacitor (CMOS) structure.
In the present invention, form antistatic protection function is not limited to metal ring structure, can also be other metal knots
Structure, the present invention do not limit its shape and metal material.
Generally, the metal ring structure includes the unclosed endless metal lead frame surrounded by a plurality of plain conductor item,
The plain conductor item is drawn by the P-type electrode from four different directions, and to N-type electrode extension and about described
N-type electrode is symmetrical.
The present invention does not limit the type and quantity and size of plain conductor, the thickness of the general plain conductor item
Degree is about 15nm~20nm.
In the present invention, it is contemplated that, can be with preferred design p-type electricity the problems such as chip size, current expansion and thermal diffusivity
The number of pole, the arrangement mode of shape and electrode matrix generally use common LED chip knot in embodiments of the present invention
The number of structure, P-type electrode is preferably one, and the number of N-type electrode is also one, but does not do specific restriction.
It should be pointed out that in grown epitaxial layer p-type AlGaN electronic barrier layers, p-type AlGaN transition zones and p-type successively
It when GaN contact layers, is grown using cryogenic conditions, can be very good filling since LED light source chip material is inherently special
Property caused by V-type defect, delay the residual stress between small epitaxial material, hence it is evident that enhance under Human Body Model or Machinery model
The antistatic striking capabilities of LED light source chip, and then improve the reliability of the quality and device of LED light source chip.
In order to further increase its heat-sinking capability, the deep ultraviolet LED epitaxial structure preparation method, the step 5 it
Afterwards, further include：
Step 6, baseplate heat sink is set in the other side of the Sapphire Substrate.
It is overturn, is tipped upside down on baseplate heat sink by the way that LED epitaxial structure of the above after Passivation Treatment to be inverted,
And then complete the basic encapsulation process of LED chip.
Specifically, include mainly wiring layer, insulating layer, adhesive layer and heat sink in the baseplate heat sink.Wherein, the cloth
Line layer choosing is the eutectic solders such as Ni/Au alloys or Au/Sn, forms metal electrical connection by the solder so that LED core
Piece is coupling on baseplate heat sink；The insulating layer can select the insulating materials such as AlN substrates, Si/AlN ceramics；The bonding
Layer can select the binding materials such as conductive silver paste, silica gel；And the heat sink selection is metal Al substrates.Pass through base described above
The optimization design of plate radiator so that the heat dissipation of LED chip is more efficient.
Pass through despising it is found that it is with anti-to above-mentioned deep ultraviolet LED epitaxial chip encapsulating structures provided by the invention
Electric leakage, luminous efficiency is high, voltage surge is small, anti-electrostatic discharging endangers small and high reliability.
In conclusion deep ultraviolet LED epitaxial chips encapsulating structure provided in an embodiment of the present invention and preparation method, pass through
Portion etches to form the first groove and the second groove in the chip, in the forming process of electrode, only externally prolongs a layer table top knot
The sub-fraction region of structure carries out performing etching to form groove structure on the negative direction with the epitaxial layer structure direction of growth, takes
For N-type sunk area is formed in conventional etch, the etching to light-emitting zone and damage are reduced, effective hair is relatively increased
Light area；The setting of first groove and the second groove increases the current path inside epitaxial layer, plays the role of shunting,
Allow device to bear the current flowing ability of bigger, the ability of anti-high current or high current is promoted, device it is reliable
Property is improved；Due in the first groove and the second groove be provided with metal layer and interior metal contact layer, and metal layer and
The higher heat-transfer capability of interior metal contact layer local shortens heat-transfer path compared with existing chip, reduces heat
Resistance, improves radiating efficiency.
Detailed Jie has been carried out to deep ultraviolet LED epitaxial chips encapsulating structure provided by the present invention and preparation method above
It continues.Principle and implementation of the present invention are described for specific case used herein, and the explanation of above example is only
It is the method and its core concept for being used to help understand the present invention.It should be pointed out that for those skilled in the art
For, it without departing from the principle of the present invention, can be with several improvements and modifications are made to the present invention, these improve and repair
Decorations are also fallen within the protection scope of the claims of the present invention.
Claims (10)
1. a kind of deep ultraviolet LED epitaxial chip encapsulating structures, which is characterized in that including Sapphire Substrate, set gradually based on institute
State Sapphire Substrate side BN buffer layers, AlN layers, AlN/AlGaN superlattice layers, heavily doped N-type AlGaN layer, lightly doped n type
AlGaN layer, AlGaN/AlGaN multi-quantum well active regions, p-type AlGaN electronic barrier layers, p-type AlGaN transition zones, p-type GaN connect
Contact layer, current extending, reflecting layer, conductive film contact layer and passivation insulation in table top and side wall is set, further includes
Across the passivation insulation, the first groove of the conductive film contact layer to the heavily doped N-type AlGaN layer and across institute
State passivation insulation, the conductive film contact layer to the current extending the second groove, setting in first groove
There are the N-type interior metal contact layer of the first metal layer of bottom, the first separation layer of side wall and filling, the first metal layer
It is connect with the N-type electrode for being arranged in table top by the N-type interior metal contact layer, bottom is provided in second groove
The p-type interior metal contact layer of second metal layer, the second separation layer of side wall and filling, the second metal layer pass through the P
Type interior metal contact layer is connect with the P-type electrode for being arranged in the table top.
2. deep ultraviolet LED epitaxial structure according to claim 1, which is characterized in that further include being arranged in the conductive film
The metal ring structure being connect with the P-type electrode without being connect with the N-type electrode outside contact layer.
3. deep ultraviolet LED epitaxial structure according to claim 2, which is characterized in that the metal ring structure includes by a plurality of
The unclosed endless metal lead frame that plain conductor item surrounds, the plain conductor item is by the P-type electrode from four differences
Direction draw, and extend but be not connected to the N-type electrode, and it is symmetrical about the N-type electrode.
4. deep ultraviolet LED epitaxial structure according to claim 3, which is characterized in that the thickness of the plain conductor item is about
15nm~20nm.
5. deep ultraviolet LED epitaxial structure according to claim 4, which is characterized in that further include that setting is served as a contrast in the sapphire
Bottom connect the gully shape structure of side with the BN buffer layers.
6. deep ultraviolet LED epitaxial structure according to claim 5, which is characterized in that first separation layer, described second every
The thickness of absciss layer is 5nm~10nm.
7. deep ultraviolet LED epitaxial structure according to claim 6, which is characterized in that further include that setting is served as a contrast in the sapphire
The baseplate heat sink of the other side at bottom.
8. a kind of deep ultraviolet LED epitaxial structure preparation method, which is characterized in that including：
Step 1, deep ultraviolet LED chip main body is prepared, the deep ultraviolet LED chip main body includes Sapphire Substrate, sets gradually
BN buffer layers based on the Sapphire Substrate side, AlN layers, it is AlN/AlGaN superlattice layers, heavily doped N-type AlGaN layer, light
Doped N-type AlGaN layer, AlGaN/AlGaN multi-quantum well active regions, p-type AlGaN electronic barrier layers, p-type AlGaN transition zones, P
Type GaN contact layers, current extending, reflecting layer, conductive film contact layer and passivation insulation in table top and side wall is set；
Step 2, the passivation insulation is etched, the conductive film contact layer to the heavily doped N-type AlGaN layer forms first
Groove etches the passivation insulation, the conductive film contact layer to the current extending forms the second groove；
Step 3, in the bottom deposit the first metal layer of first groove, the first separation layer is set in side wall, and described the
N-type interior metal contact layer is filled in one groove, in the bottom deposit second metal layer of second groove, in side wall setting the
One separation layer, and p-type interior metal contact layer is filled in first groove；
Step 4, first groove is arranged above the N being connect with the N-type interior metal contact layer on the table top
Type electrode, second groove is arranged above the p-type electricity being connect with the p-type interior metal contact layer on the table top
Pole.
9. deep ultraviolet LED epitaxial structure preparation method according to claim 8, which is characterized in that after the step 4,
Further include：
Step 5, the metal ring structure being connect with the P-type electrode without being connect with the N-type electrode is set in the table top.
10. deep ultraviolet LED epitaxial structure preparation method according to claim 9, which is characterized in that after the step 5,
Further include：
Step 6, baseplate heat sink is set in the other side of the Sapphire Substrate.
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