CN107452846A - A kind of ultraviolet LED flip-chip - Google Patents
A kind of ultraviolet LED flip-chip Download PDFInfo
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- CN107452846A CN107452846A CN201710873273.0A CN201710873273A CN107452846A CN 107452846 A CN107452846 A CN 107452846A CN 201710873273 A CN201710873273 A CN 201710873273A CN 107452846 A CN107452846 A CN 107452846A
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- ultraviolet led
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- led flip
- electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
Abstract
The invention discloses a kind of ultraviolet LED flip-chip, including：Substrate；Epitaxial layer structure over the substrate is set；The epitaxial layer structure includes：Buffering and nucleating layer, superlattice structure, highly doped n-type AlGaN layer, lightly doped n-type AlGaN layer, Quantum well active district, electronic barrier layer, P-type conduction layer, reflecting layer, current extending, insulating barrier and the conductive membrane layer set gradually in a first direction.Wherein, the first direction points to the epitaxial layer structure perpendicular to the substrate, and by the substrate.The ultraviolet LED flip-chip have anticreep, luminous efficiency is high, voltage surge is small, antistatic release harm, rapid heat dissipation and high reliability.
Description
Technical field
The present invention relates to semiconductor light emitting element device arts, more specifically, more particularly to a kind of ultraviolet LED upside-down mounting
Chip.
Background technology
With the continuous development of group iii nitride semiconductor material and epitaxy technique, the output intensity of ultraviolet LED also exists
Improve constantly.Compared with traditional ultraviolet source, ultraviolet LED have low energy-conservation, long lifespan, operating voltage, efficiency high and
The advantages that green；There is particularly important status in the fields such as sterilizing, printing lithographic and communication detecting.
But existing ultraviolet LED epitaxial chip is in preparation process, because semi-conducting material doping efficiency is low, extension
The problems such as second-rate and carrier concentration is not high causes light efficiency low；Also, the growth course of the materials such as substrate, epitaxial layer
In, itself having that face crack, crystal mass are poor, structural material design difficulty is big, complex process, required precision are high etc. lacks
Fall into；In follow-up flip chip bonding, die bond and encapsulation process, there is also power-type chip size is big, heat production is more, weak heat-dissipating, quarter
Erosion area causes greatly the problems such as light-emitting area is small, brightness is not high and static discharge endangers.
In the prior art, by using compatible manufacturing process, in combination with the epitaxy technique of high quality, LED is reduced
The generation of rudimentary defect in chip, also by being encapsulated in LED during introduce diode structure so that LED chip is extra
Surge voltage or pulse current discharging path are formed, reduces harm of the electrostatic to LED chip to a certain extent.
But by above-mentioned improved procedure, high degree adds the packaging cost of LED chip, and increases work
The enforcement difficulty of skill and the yield rate for reducing LED chip.
The content of the invention
To solve the above problems, the invention provides a kind of ultraviolet LED flip-chip, the ultraviolet LED flip-chip has
It is anticreep, luminous efficiency is high, voltage surge is small, antistatic release harm, rapid heat dissipation and high reliability.
To achieve the above object, the present invention provides following technical scheme：
A kind of ultraviolet LED flip-chip, the ultraviolet LED flip-chip include：
Substrate；
Epitaxial layer structure over the substrate is set；The epitaxial layer structure includes：Set gradually in a first direction
Buffering and nucleating layer, superlattice structure, highly doped n-type AlGaN layer, lightly doped n-type AlGaN layer, Quantum well active district, electronics
Barrier layer, P-type conduction layer, reflecting layer, current extending, insulating barrier and conductive membrane layer；
Wherein, the first direction points to the epitaxial layer structure perpendicular to the substrate, and by the substrate.
Preferably, in above-mentioned ultraviolet LED flip-chip, the insulating barrier is arranged at the current extending middle area
Domain, and the current extending and the insulating barrier contact with the reflecting layer respectively.
Preferably, in above-mentioned ultraviolet LED flip-chip, the ultraviolet LED flip-chip also includes：
Through the lightly doped n-type AlGaN layer, the Quantum well active district, the electronic barrier layer, the P-type conduction
Layer, the reflecting layer, the first electrode groove structure of the current extending and the conductive membrane layer；
Through the current extending and the second electrode groove structure of the conductive membrane layer；
Through the lightly doped n-type AlGaN layer, the Quantum well active district, the electronic barrier layer, the P-type conduction
Layer, the reflecting layer, the insulating barrier and the conductive membrane layer setting shape the 3rd groove structure.
Preferably, in above-mentioned ultraviolet LED flip-chip, the ultraviolet LED flip-chip also includes：
It is respectively arranged at the first electrode groove structure internal side wall and the second electrode groove structure private side
The separation layer of wall；
It is respectively arranged at the first electrode groove structure internal side wall and the second electrode groove structure private side
Wall deviates from the interior contact layer of the separation layer side.
Preferably, in above-mentioned ultraviolet LED flip-chip, the ultraviolet LED flip-chip also includes：
It is arranged in the conductive film layer surface and the n-electrode of connection is contacted with the first electrode groove structure；
It is arranged in the conductive film layer surface and the p-electrode of connection is contacted with the second electrode groove structure.
Preferably, in above-mentioned ultraviolet LED flip-chip, the ultraviolet LED flip-chip also includes：
The SiO being arranged inside the 3rd groove structure2Layer, and the SiO2The thickness of layer is less than the first direction
On since the highly doped n-type AlGaN layer the distance between to the insulating barrier；
It is arranged at the SiO2Metal circular layer on layer, the metal circular layer be unclosed structure the structure of falling E, for pair
The epitaxial layer structure region of the n-electrode is wrapped up, and is not connected to the n-electrode.
Preferably, in above-mentioned ultraviolet LED flip-chip, the ultraviolet LED flip-chip also includes：Board structure；
Wherein, the board structure includes：The metal wiring layer that sets gradually in said first direction, AlN layers, conduction
Silver slurry layer and substrate.
Preferably, in above-mentioned ultraviolet LED flip-chip, the P-type conduction layer includes：P-type AlGaN layer and p-type GaN
Layer；
Wherein, the p-type AlGaN layer and p-type GaN layer are set in turn in the electronic blocking in said first direction
Between layer and the reflecting layer.
Preferably, in above-mentioned ultraviolet LED flip-chip, the thickness of the highly doped n-type AlGaN layer is 1.7um-
1.9um, including endpoint value.
Preferably, in above-mentioned ultraviolet LED flip-chip, the thickness of the lightly doped n-type AlGaN layer is 0.1um-
0.3um, including endpoint value.
By foregoing description, ultraviolet LED flip-chip provided by the invention is by setting gradually highly doped n-type
AlGaN layer and lightly doped n-type AlGaN layer, the traditional n-type AlGaN layer of thickness identical is instead of, and be lightly doped by optimization
The thickness of n-type AlGaN layer, the equivalent series resistance on first direction in LED chip epitaxial structure can be directly increased so that
Current expansion of the LED chip epitaxial structure on vertical first direction is more efficient.
Also, electronic barrier layer and reflecting layer are set respectively in the both sides of P-type conduction layer, and high degree improves purple
The luminous efficiency of outer LED chip.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the required accompanying drawing used in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
The embodiment of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can also basis
The accompanying drawing of offer obtains other accompanying drawings.
Fig. 1 is a kind of schematic cross-section of ultraviolet LED flip-chip provided in an embodiment of the present invention；
Fig. 2 is a kind of top view of ultraviolet LED flip-chip provided in an embodiment of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of creative work is not made
Embodiment, belong to the scope of protection of the invention.
In order to facilitate the understanding of the purposes, features and advantages of the present invention, it is below in conjunction with the accompanying drawings and specific real
Applying mode, the present invention is further detailed explanation.
With reference to figure 1, Fig. 1 is a kind of schematic cross-section of ultraviolet LED flip-chip provided in an embodiment of the present invention.
In embodiments of the present invention, as shown in figure 1, the ultraviolet LED flip-chip includes：
Substrate 1.
The epitaxial layer structure being arranged on the substrate 1；The epitaxial layer structure includes：Set gradually in a first direction
Buffering and nucleating layer 2, superlattice structure 3, highly doped n-type AlGaN layer 4, lightly doped n-type AlGaN layer 5, Quantum well active district
6th, electronic barrier layer 7, P-type conduction layer 8, reflecting layer 9, current extending 10, insulating barrier 11 and conductive membrane layer 12.
Wherein, the first direction points to the epitaxial layer structure perpendicular to the substrate 1, and by the substrate 1.
Further, the P-type conduction layer 8 includes：P-type AlGaN layer 81 and p-type GaN layer 82.
Wherein, the p-type AlGaN layer 81 and p-type GaN layer 82 are set in turn in the electronics in said first direction
Between barrier layer 7 and the reflecting layer 9.
Specifically, the substrate 1 includes but is not limited to Sapphire Substrate because Sapphire Substrate have it is relatively low anti-
Coefficient is penetrated, and using the Sapphire Substrate that graphics-optimized designs as template, with reference to the PROCESS FOR TREATMENT shape such as etching and corrosion
Into the class cylinder volume graphic that a kind of cross section is Magen David, and use non-polar plane sapphire.
Wherein, the thickness of the substrate 1 is chosen as 150um, buffers and the thickness of nucleating layer 2 is chosen as 0.1um, superlattices knot
The thickness of structure 3 is chosen as 0.2um, and the thickness of highly doped n-type AlGaN layer 4 is chosen as 1.7um-1.9um, lightly doped n-type AlGaN
The thickness of layer 5 is chosen as 0.1um-0.3um, and the thickness of Quantum well active district 6 is chosen as 1um, and the thickness of electronic barrier layer 7 is optional
For 0.1um, the thickness of p-type AlGaN layer 81 is chosen as 50nm, and the thickness of p-type GaN layer 82 is chosen as 0.1um, the thickness in reflecting layer 9
Degree is chosen as 50nm, and the thickness of current extending 10 is chosen as 0.2um, and the thickness of insulating barrier 11 is chosen as 0.2um, conductive film
The thickness of layer 12 is chosen as 0.1um.
Based on the above-mentioned epitaxial layer structure of the present invention, the insulating barrier 11 is arranged at the intermediate region of current extending 10,
And the current extending 10 and the insulating barrier 11 contact with the reflecting layer 9 respectively.That is, in the first party
Upwards, after current extending 10 have been grown, processing is performed etching to the intermediate region of the current extending 10, until
The reflecting layer 9 is exposed, the insulating barrier 11 is deposited in the etch areas.
It should be noted that the insulating barrier 11 can contact setting with the current extending 10, can not also contact
Set；, can also be different and the insulating barrier 11 can be with identical with the thickness of the current extending 10, pass through the techniques such as photoetching
Continuous membrane structure or discontinuous membrane structure are formed after processing, it is ensured that current extending 10 is located at same surface with insulating barrier 11.Its
In, the material of current extending 10 includes but is not limited to ITO materials, and the material of insulating barrier 11 includes but is not limited to Si3N4Material
Material.
The structure setting of the current extending 10 and insulating barrier 11, when applying voltage in LED chip, positioned at n-electrode
At regional location, the conductive membrane layer 12 corresponding with insulating barrier 11 can also be applied in negative voltage simultaneously so that positioned at insulation
The concentration of the local carrier in LED chip epitaxial layer structure above layer 11 is enhanced, and current expansion is more uniform, is lighted
Also high degree is improved efficiency.
Wherein, specific epitaxial layer structure growth course is as follows：
Using MOCVD device before LED chip outer layer growth, it is filled with hydrogen as protective gas to reflection equipment
In, substrate 1 is carried out under 1000 DEG C of hot environments the pretreatment such as to toast, for removing the pollutant on the surface of substrate 1；In low temperature
Under the conditions of growing AIN nucleating layer, then the temperature in reacting furnace is brought rapidly up to 1200 DEG C, growing AIN delays in high temperature environments
Rush layer；Afterwards in the AlN/AlGaN superlattice structures 3 in five cycles of its surface extension, wherein, the AlN/AlGaN in each cycle
The AlN layers of 15nm thickness and the AlGaN layer of 25nm thickness are contained in superlattice structure again；Grow highly doped n-type successively again
AlGaN layer 4 and lightly doped n-type AlGaN layer 5；Temperature is slowly lowered to 600 DEG C, the AlGaN quantum in 20 cycles of epitaxial growth
Trap active area 6, wherein, include the AlGaN well layer and 15nm thickness of 35nm thickness in the Quantum well active district in each cycle again
Barrier layer；Continue epitaxial growth electronic barrier layer 7, p-type AlGaN layer 81, p-type GaN layer 82 and reflecting layer 9 successively；Using
Magnetron sputtering apparatus, deposition current extension layer 10 and insulating barrier 11；Regrow conductive membrane layer 12.
For the prior art that compares, ultraviolet LED flip-chip provided by the invention is in traditional LED epitaxial layer structures
N-type AlGaN layer improved, it is specific improve it is as follows：
In the case that the thickness of ensuring n-type AlGaN layer is constant, Mr. between superlattice structure 3 and Quantum well active district 6
Long thickness is 1.8um highly doped n-type AlGaN layer 4, then is grown between highly doped n-type AlGaN layer 4 and Quantum well active district 6
Thickness is 0.2um lightly doped n-type AlGaN layer 5；And ensure the carrier concentration in highly doped n-type AlGaN layer 4 up to extremely
3*1019cm-3While, the carrier concentration in lightly doped n-type AlGaN layer 5 is maintained 1017Order of magnitude scope or so.
Due to consideration that there is the reflection and absorption to light in LED chip material itself, also by with reference to epitaxy layer thickness
While reduction processing technology, thickening processing is optimized to the thickness of lightly doped n-type AlGaN layer 5, this is just directly increased
Equivalent series resistance in LED chip epitaxial layer structure in a first direction, and then cause LED epitaxial layers in vertical first direction
On current expansion it is more efficient, not only increase the output intensity of LED chip, also enhance LED chip anti-electrostatic discharging electricity
Pressure strike, the ability of Antisurge current impact, avoid super-high-current and the pn-junction in LED chip structure are caused damage.
Meanwhile by deviating from the side deposition of reflective layer 9 of p-type AlGaN layer 81 in the p-type GaN layer 82, and to this
Reflecting layer 9 carries out the processing of the special process such as surface coarsening so that and light can farthest be reflected, and be exported again,
Effectively raise the reflecting effect of light, it is clear that the luminous flux for enhancing LED chip.Wherein, the material in reflecting layer
Including but not limited to argent or Ni/Ag/Al alloy material structures.
Based on the above embodiment of the present invention, as shown in figure 1, the ultraviolet LED flip-chip also includes：
Led through the lightly doped n-type AlGaN layer 5, the Quantum well active district 6, the electronic barrier layer 7, the p-type
Electric layer 8, the reflecting layer 9, the first electrode groove structure of the current extending 10 and the conductive membrane layer 12.
Through the current extending 10 and the second electrode groove structure of the conductive membrane layer 12.
It should be noted that in embodiments of the present invention, it is provided with multiple first electrode groove structures and second electrode is recessed
Slot structure, and during etching, strictly control etch rate, it is ensured that simply small part is performed etching, reduces etching
Damage to epitaxial layer light-emitting zone, and then improve the light output intensity of LED chip.
Further, the ultraviolet LED flip-chip also includes：It is respectively arranged inside the first electrode groove structure
The separation layer 13 of side wall and the second electrode groove structure internal side wall.
It is respectively arranged at the first electrode groove structure internal side wall and the second electrode groove structure private side
Wall deviates from the interior contact layer 14 of the separation layer side.
Specifically, first electrode groove structure internal side wall and second electrode groove structure internal side wall be provided with every
Absciss layer 13, the separation layer 13 preferably resolve the formation of leakage current, prevent the sidewall surfaces of metal electrode contact layer structure with
LED chip interior contact layer 14 directly form current loop and caused by short circuit, the thickness of wherein separation layer 13 is chosen as 10nm.
Also, deviate from institute in first electrode groove structure internal side wall and the second electrode groove structure internal side wall
It is optional to use Ti/Al metal alloys to contact material as electrode during stating the side of separation layer 13 formation interior contact layer 14
Material so that the aluminium of electrode surface enhances the reflecting effect of light, reduces absorption and increase of the electrode edge to some light
Extraction of the Sapphire Substrate to marginal ray.
That is, when applying larger external voltage to LED chip, the big pulse current formed is flowing through LED
While chip epitaxial layer structure, the interior contact layer 14 can also be flowed through faster, preferable shunting action is played, avoids
LED chip epitaxial layer is influenceed by big pulse current.
It should be noted that in Fig. 1, the separation layer in second electrode groove structure and interior contact layer are not entered
Line label.
Further, the ultraviolet LED flip-chip also includes：
It is arranged on the surface of conductive membrane layer 12 and the n-electrode of connection is contacted with the first electrode groove structure
15；
It is arranged on the surface of conductive membrane layer 12 and the p-electrode of connection is contacted with the second electrode groove structure
16。
Based on the above embodiment of the present invention, as shown in figure 1, the ultraviolet LED flip-chip also includes：
Led through the lightly doped n-type AlGaN layer 5, the Quantum well active district 6, the electronic barrier layer 7, the p-type
Electric layer 8, the reflecting layer 9, the insulating barrier 11 and the conductive membrane layer 12 setting shape the 3rd groove structure.
With reference to figure 2, Fig. 2 is a kind of top view of ultraviolet LED flip-chip provided in an embodiment of the present invention.
In embodiments of the present invention, the 3rd groove structure for setting shape as E shape structure, wherein, the 3rd
The width of groove structure is chosen as 20.2um.
Further, the ultraviolet LED flip-chip also includes：
The SiO being arranged inside the 3rd groove structure2Layer 17, and the SiO2The thickness of layer 17 is less than described first
The distance between to the insulating barrier 11 since the highly doped n-type AlGaN layer 4 on direction；
It is arranged at the SiO2Metal circular layer 18 on layer 17, the metal circular layer 18 are the structure of falling E of unclosed structure,
It is not connected to for wrapping up the epitaxial layer structure region of the n-electrode 15, and with the n-electrode 15.
Optionally, the metal circular layer 18 is located at the SiO2The middle position of layer 17, and material is chosen as Cr/Au materials
Material, it is a kind of floating, unclosed ring-type extension Rotating fields.
As shown in Fig. 2 the metal circular layer 18 is carried out around n-electrode region to the epitaxial layer structure region of n-electrode 15
Annular parcel, and be not connected to n-electrode 15.
Specifically, because the electric-field intensity inside the pn-junction close to n-electrode 15 is stronger relative to other semiconductor regions,
Becket Rotating fields 18 by setting a kind of this floating, unclosed, there is electrostatic induction and metal between n-electrode 15
The electron screening effect of circular layer 18, the peak electric field strength close to n-electrode 15pn tie regions is effectively reduced, is added in air
Electrostatic capacitance, avoid the violent increase of reverse current caused by when electric-field intensity reaches maximum, reduce to LED chip
Damage, hence it is evident that improve the intensity of the antistatic strike of LED chip.
Based on the above embodiment of the present invention, as shown in figure 1, the ultraviolet LED flip-chip also includes：Passivation layer 19.
Wherein, the passivation layer 19 surrounds the epitaxial layer structure, to reduce influence of the leakage current to LED chip, and it is anti-
Only external environment improves the current spreading problem of active area in LED chip epitaxial layer, reduced to the corrosion impact of LED chip
Electric current pile up effect, improve the optical output power of LED chip.
Based on the above embodiment of the present invention, as shown in figure 1, the ultraviolet LED flip-chip also includes：Board structure.
Wherein, wherein, the board structure includes：Metal wiring layer 20, the AlN set gradually in said first direction
Layer 21, conductive silver slurry layer 22 and substrate 23；The thickness of metal wiring layer 20 is chosen as 20um, and the thickness of AlN layers 21 is chosen as
0.5mm, the thickness of conductive silver slurry layer 22 is chosen as 10um and the thickness of substrate 23 is chosen as 1mm.
Specifically, carry out the die bond in LED chip later stage using crystal column surface bonding techniques, inverse bonding is filled with and encapsulated and waited
Journey, LED chip epitaxial layer structure upside-down mounting eutectic is welded on by n-electrode 15 and the structure of p-electrode 16 and is provided with metal line
On the substrate 23 of layer 20, and then complete the preliminary encapsulation to LED chip.
Wherein, substrate 23 preferably uses the substrate of SiC material, with reference to highdensity metal wiring layer 20 so that LED chip
The hot path between Quantum well active district 6 and substrate 23 in inverted structure is shorter, and radiating is faster；And need metal line
The centre position of layer 20 performs etching disconnection, short to prevent from occurring in LED chip to separate p-electrode region and n-electrode region
Road phenomenon.
Based on the above-mentioned whole embodiments of the present invention, a kind of ultraviolet LED flip-chip provided by the invention has anticreep, hair
Light efficiency is high, voltage surge is small, antistatic discharges harm, rapid heat dissipation and high reliability.
The foregoing description of the disclosed embodiments, professional and technical personnel in the field are enable to realize or using the present invention.
A variety of modifications to these embodiments will be apparent for those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, it is of the invention
The embodiments shown herein is not intended to be limited to, and is to fit to and principles disclosed herein and features of novelty phase one
The most wide scope caused.
Claims (10)
1. a kind of ultraviolet LED flip-chip, it is characterised in that the ultraviolet LED flip-chip includes：
Substrate；
Epitaxial layer structure over the substrate is set；The epitaxial layer structure includes：What is set gradually in a first direction is slow
Punching and nucleating layer, superlattice structure, highly doped n-type AlGaN layer, lightly doped n-type AlGaN layer, Quantum well active district, electronic blocking
Layer, P-type conduction layer, reflecting layer, current extending, insulating barrier and conductive membrane layer；
Wherein, the first direction points to the epitaxial layer structure perpendicular to the substrate, and by the substrate.
2. ultraviolet LED flip-chip according to claim 1, it is characterised in that the insulating barrier is arranged at the electric current
Extension layer intermediate region, and the current extending and the insulating barrier contact with the reflecting layer respectively.
3. ultraviolet LED flip-chip according to claim 2, it is characterised in that the ultraviolet LED flip-chip also wraps
Include：
Through the lightly doped n-type AlGaN layer, the Quantum well active district, the electronic barrier layer, the P-type conduction layer, institute
State the first electrode groove structure in reflecting layer, the current extending and the conductive membrane layer；
Through the current extending and the second electrode groove structure of the conductive membrane layer；
Through the lightly doped n-type AlGaN layer, the Quantum well active district, the electronic barrier layer, the P-type conduction layer, institute
State the 3rd groove structure of the setting shape in reflecting layer, the insulating barrier and the conductive membrane layer.
4. ultraviolet LED flip-chip according to claim 3, it is characterised in that the ultraviolet LED flip-chip also wraps
Include：
It is respectively arranged at the first electrode groove structure internal side wall and the second electrode groove structure internal side wall
Separation layer；
It is respectively arranged at the first electrode groove structure internal side wall and the second electrode groove structure internal side wall back of the body
From the interior contact layer of the separation layer side.
5. ultraviolet LED flip-chip according to claim 3, it is characterised in that the ultraviolet LED flip-chip also wraps
Include：
It is arranged in the conductive film layer surface and the n-electrode of connection is contacted with the first electrode groove structure；
It is arranged in the conductive film layer surface and the p-electrode of connection is contacted with the second electrode groove structure.
6. ultraviolet LED flip-chip according to claim 5, it is characterised in that the ultraviolet LED flip-chip also wraps
Include：
The SiO being arranged inside the 3rd groove structure2Layer, and the SiO2Layer thickness be less than the first direction on from
The highly doped n-type AlGaN layer the distance between starts to the insulating barrier；
It is arranged at the SiO2Metal circular layer on layer, the metal circular layer is the structure of falling E of unclosed structure, for the n
The epitaxial layer structure region of electrode is wrapped up, and is not connected to the n-electrode.
7. ultraviolet LED flip-chip according to claim 5, it is characterised in that the ultraviolet LED flip-chip also wraps
Include：Board structure；
Wherein, the board structure includes：Metal wiring layer, AlN layers, the conductive silver paste set gradually in said first direction
Layer and substrate.
8. ultraviolet LED flip-chip according to claim 1, it is characterised in that the P-type conduction layer includes：P-type
AlGaN layer and p-type GaN layer；
Wherein, the p-type AlGaN layer and p-type GaN layer be set in turn in said first direction the electronic barrier layer with
Between the reflecting layer.
9. ultraviolet LED flip-chip according to claim 1, it is characterised in that the thickness of the highly doped n-type AlGaN layer
Spend for 1.7um-1.9um, including endpoint value.
10. ultraviolet LED flip-chip according to claim 1, it is characterised in that the thickness of the lightly doped n-type AlGaN layer
Spend for 0.1um-0.3um, including endpoint value.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710873273.0A CN107452846A (en) | 2017-09-25 | 2017-09-25 | A kind of ultraviolet LED flip-chip |
| PCT/CN2017/112257 WO2019056539A1 (en) | 2017-09-25 | 2017-11-22 | Ultraviolet led flip chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710873273.0A CN107452846A (en) | 2017-09-25 | 2017-09-25 | A kind of ultraviolet LED flip-chip |
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|---|---|
| CN107452846A true CN107452846A (en) | 2017-12-08 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710873273.0A Pending CN107452846A (en) | 2017-09-25 | 2017-09-25 | A kind of ultraviolet LED flip-chip |
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| CN (1) | CN107452846A (en) |
| WO (1) | WO2019056539A1 (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108493311A (en) * | 2018-05-11 | 2018-09-04 | 广东工业大学 | A kind of deep ultraviolet LED epitaxial chips encapsulating structure and preparation method |
| CN108598228A (en) * | 2018-06-29 | 2018-09-28 | 广东工业大学 | Outer LED vertical chip encapsulating structure of a kind of high-power purple and preparation method thereof |
| CN108666397A (en) * | 2018-06-29 | 2018-10-16 | 广东工业大学 | A kind of ultraviolet LED thin-film LED and preparation method thereof |
| CN110534623A (en) * | 2019-09-03 | 2019-12-03 | 厦门乾照光电股份有限公司 | LED chip and preparation method thereof |
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