CN108471225A - A kind of voltage detecting and controling circuit for by-pass switch - Google Patents
A kind of voltage detecting and controling circuit for by-pass switch Download PDFInfo
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- CN108471225A CN108471225A CN201810382381.2A CN201810382381A CN108471225A CN 108471225 A CN108471225 A CN 108471225A CN 201810382381 A CN201810382381 A CN 201810382381A CN 108471225 A CN108471225 A CN 108471225A
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- pmos tube
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- pmos
- voltage
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
Abstract
A kind of voltage detecting and controling circuit for by-pass switch belongs to electronic circuit technology field.By-pass switch makees main switch using VDMOS power tubes, the body diode conduction voltage drop of VDMOS power tubes is supply voltage, it powers for oscillator and charge pump circuit, oscillator generates clock signal control charge pump circuit and supply voltage pump liter output is generated supply voltage to voltage detecting circuit, for voltage detecting circuit and drive circuitry, the output signal control charge pump circuit and driving circuit of voltage detecting circuit, driving circuit generates the drive signal with bigger driving capability and controls VDMOS power tubes, when output voltage reaches preset upper limit, breaking circuit stops to the first capacitor charging, circuit is opened when the voltage of the first capacitance drops to pre-determined lower limit continues as the first capacitor charging.The present invention have the advantages that average conduction voltage drop be substantially reduced, reversed pressure-resistant higher, leakage current smaller；And voltage detecting circuit uses built-in comparator, has ensured the reliability of predeterminated voltage.
Description
Technical field
The invention belongs to electronic circuit technology fields, are related to a kind of voltage detecting and controling circuit for by-pass switch.
Background technology
The average conduction voltage drop of by-pass switch is direct an important factor for determining by-pass switch module dissipation, compared to tradition
Bypass diode mode, have as by-pass switch main switch that conduction voltage drop is extremely low, power consumption is greatly reduced using VDMOS
Clear superiority.The reversed pressure resistance of by-pass switch module determines the voltage range of commutation system application, such as determines photovoltaic system
The quantity of solar battery cell in parallel in system use.Reversed pressure resistance in conventional schottky design and forward conduction
Pressure drop is an index mutually restricted, the by-pass switch using VDMOS as main switch, in reversed pressure voltage design
It can be more flexible.The leakage current of by-pass switch is also an important indicator, for the solar battery cell of photovoltaic system,
When normal power generation, by-pass switch module is closed, and leakage current also determines the quiescent dissipation of module.Traditional Schottky
Diode leakage is larger, and VDMOS is used to use high-voltage tube as pressure pipe, leakage current as the by-pass switch of main switch
10uA or less can be designed into.Traditional by-pass switch module is changed predeterminated voltage using collector voltage, generally
Input voltage can be converted using charge pump drives VDMOS power tubes into driving voltage, and charge pump pumping voltage is because of fluctuation ratio
It is larger, concussion is susceptible to when voltage is higher so that the predeterminated voltage of by-pass switch causes accidentally to touch because power supply ripple is larger
Question is inscribed.
Invention content
Compared to traditional Schottky bypass diode, a kind of voltage detecting control for by-pass switch proposed by the present invention
Circuit processed, by-pass switch use VDMOS as main switch, there is average conduction voltage drop to be substantially reduced, reversed pressure-resistant higher, leak
Many advantages, such as electric current smaller；For by-pass switch predeterminated voltage because of false triggering problem, this hair caused by power supply ripple is larger
Voltage detecting circuit in bright uses built-in comparator, has ensured the reliability of predeterminated voltage；It is filled by alternately operating realization
Electric stage and discharge regime, charge pump convert input voltage source as driving voltage, drive VDMOS power tubes, to improve bypass
Switch drive efficiency, hence it is evident that reduce average conduction voltage drop.
The technical scheme is that：
A kind of voltage detecting and controling circuit for by-pass switch, the by-pass switch are decided out using VDMOS power tubes
Guan Guan, the voltage detecting and controling circuit include the first capacitance C1 and control module, and the control module includes three control terminals
With an output end, the first control terminal connects the source electrode of the VDMOS power tubes and connects supply voltage VDD, the second control
End processed connects the drain electrode of the VDMOS power tubes, and third control terminal connects the grid of the VDMOS power tubes, output end
Connect one end of the first capacitance C1, the other end ground connection of the first capacitance C1；The conduction voltage drop of the VDMOS power tubes body diode
As the supply voltage VDD；
The control module includes oscillator, charge pump circuit, voltage detecting circuit, driving circuit, first resistor R1,
Two resistance R2 and high voltage PMOS pipe MP40,
Oscillator connects first control terminal with the power end of charge pump circuit, is powered by the supply voltage VDD；
The input terminal of the charge pump circuit connects the output end of the oscillator, and output voltage connects the voltage inspection
The input terminal of slowdown monitoring circuit provides supply voltage VDDH, the supply voltage VDDH connections driving electricity for the voltage detecting circuit
The output end of the power end on road and the control module；
The output end of the voltage detecting circuit connects the input terminal of the driving circuit and the when clock of the oscillator
End processed, and the grid by connecting high voltage PMOS pipe MP40 after second resistance R2；
The output end of the driving circuit connects the third control terminal；
First resistor R1 is connected between first control terminal and the grid of high voltage PMOS pipe MP40；
The drain electrode of high voltage PMOS pipe MP40 connects second control terminal, source electrode ground connection；
The voltage detecting circuit includes detection module, band-gap reference source module and comparator module, the band-gap reference
Source module is used to generate bandgap voltage reference Vref and exports to the first input end of the comparator module,
The detection module includes the first NMOS tube MN1, the second NMOS tube MN2, third NMOS tube MN3, the 4th NMOS tube
MN4, the 5th NMOS tube MN5, the first PMOS tube MP1, the second PMOS tube MP2, third PMOS tube MP3, the 4th PMOS tube MP4,
Five PMOS tube MP5, the 6th PMOS tube MP6, the 7th PMOS tube MP7,3rd resistor R3, the 4th resistance R4 and the 5th resistance R5,
Input terminal of the drain electrode of 7th PMOS tube MP7 as the voltage detecting circuit, source electrode generate the power supply electricity
VDDH, grid is pressed to connect the grid of the 4th NMOS tube MN4, the 5th PMOS tube MP5, the first NMOS tube MN1 and the first PMOS tube MP1
The drain electrode of pole and the 4th PMOS tube MP4 and third NMOS tube MN3；
First PMOS tube MP1, the second PMOS tube MP2, third PMOS tube MP3, the 4th PMOS tube MP4, the 5th PMOS tube MP5
The supply voltage VDDH is connected with the source electrode of the 6th PMOS tube MP6；
4th resistance R4 and the 5th resistance R5 series connection are attempted by the of the supply voltage VDDH and the comparator module
Between two input terminals, 3rd resistor R3 is connected between the second input terminal of the comparator module and ground；
The drain electrode of grid connection the first PMOS tube MP1 and the first NMOS tube MN1 of second PMOS tube MP2, drain electrode pass through
The series connection point of the 4th resistance R4 and the 5th resistance R5 is connected after 6th resistance R6；
The output end of the grid and the comparator module of the grid connection third PMOS tube MP3 of second NMOS tube MN2,
Source electrode connects source electrode and the ground connection of the first NMOS tube MN1, third NMOS tube MN3, the 4th NMOS tube MN4 and the 5th NMOS tube MN5,
The drain electrode of its connection third PMOS tube MP3 that drains, the grid of third NMOS tube MN3 and the 4th PMOS tube MP4；
The grid of 5th NMOS tube MN5 connects grid, the 4th NMOS tube MN4 and the 5th PMOS tube of the 6th PMOS tube MP6
The drain electrode of MP5, drain electrode connect the drain electrode of the 6th PMOS tube MP6 and as the output ends of the voltage detecting circuit.
Specifically, the band-gap reference source module includes the 7th resistance R7, the 8th resistance R8, the first triode Q1, second
Triode Q2, the 8th PMOS tube MP8, the 9th PMOS tube MP9, the tenth PMOS tube MP10 and the 11st PMOS tube MP11,
The grid leak short circuit of tenth PMOS tube MP10 and the grid and the 8th PMOS tube MP8 for connecting the 11st PMOS tube MP11
Source electrode, source electrode connect the source electrode of the 11st PMOS tube MP11 and the supply voltage VDDH；
The grid of 9th PMOS tube MP9 connects the grid and the collection of drain electrode and the second triode Q2 of the 8th PMOS tube MP8
Electrode, source electrode connect the 11st PMOS tube MP11 drain electrode, drain electrode connection the first triode Q1 base stage and collector with
And second triode Q2 base stage and as the output end of the band-gap reference source module；
7th resistance R7 and the 8th resistance R8 series connection are attempted by between the emitter and ground of the second triode Q2, series connection point
Connect the emitter of the first triode Q1.
Specifically, the comparator module includes the 6th NMOS tube MN6, the 7th NMOS tube MN7, the 8th NMOS tube MN8, the
12 PMOS tube MP12, the 13rd PMOS tube MP13, the 14th PMOS tube MP14, the 15th PMOS tube MP15, the 16th PMOS
Pipe MP16 and the 17th PMOS tube MP17,
First input end of the grid of 16th PMOS tube MP16 as the comparator module, source electrode connection the 15th
The drain electrode of PMOS tube MP15 and the source electrode of the 17th PMOS tube MP17, the grid of the 6th NMOS tube MN6 of drain electrode connection and drain electrode
And the 7th NMOS tube MN7 grid；
Second input terminal of the grid of 17th PMOS tube MP17 as the comparator module, drain electrode connection the 7th
The drain electrode of NMOS tube MN7 and the grid of the 8th NMOS tube MN8；6th NMOS tube MN6, the 7th NMOS tube MN7 and the 8th NMOS tube
The source electrode of MN8 is grounded；
The drain electrode of 13rd PMOS tube MP13 connects the drain electrode of the 8th NMOS tube MN8 and as the defeated of the comparator module
Outlet, grid connect the grid of the 15th PMOS tube MP15 and the grid of the 8th PMOS tube MP8 in the band-gap reference source module
Pole, source electrode connect the drain electrode of the 14th PMOS tube MP14；
The grid of 12nd PMOS tube MP12 connects the grid of the 14th PMOS tube MP14 and the band-gap reference source module
In the 8th PMOS tube MP8 source electrode, drain electrode connection the 15th PMOS tube MP15 source electrode, source electrode connect the 14th PMOS tube
The source electrode of MP14 simultaneously connects the supply voltage VDDH.
Beneficial effects of the present invention are：Voltage detecting and controling circuit provided by the invention is decided out for VDMOS power tubes
The by-pass switch for closing pipe, improves by-pass switch drive efficiency, compared with traditional by-pass switch using Schottky diode,
Have the advantages that average conduction voltage drop be substantially reduced, reversed pressure-resistant higher, leakage current smaller；Voltage detecting circuit uses built-in ratio
Compared with device, the reliability of predeterminated voltage has been ensured.
Description of the drawings
Fig. 1 is a kind of structure chart of voltage detecting and controling circuit for by-pass switch proposed by the present invention.
Fig. 2 is that the structure of control module in a kind of voltage detecting and controling circuit for by-pass switch proposed by the present invention is shown
It is intended to.
Fig. 3 is a kind of output waveform figure of voltage detecting and controling circuit for by-pass switch proposed by the present invention.
Fig. 4 is a kind of voltage detecting and controling circuit for by-pass switch proposed by the present invention voltage detecting in embodiment
The structural schematic diagram of circuit.
Fig. 5 is that a kind of voltage detecting circuit of voltage detecting and controling circuit for by-pass switch proposed by the present invention exports
Schematic diagram.
Specific implementation mode
In the following with reference to the drawings and specific embodiments, detailed description of the present invention technical solution.
Voltage detecting and controling circuit proposed by the present invention makees the by-pass switch of main switch suitable for VDMOS power tubes, such as
Shown in Fig. 1, voltage detecting and controling circuit includes the first capacitance C1 and control module, and control module includes three control terminals and one
Output end, the source electrode of the first control terminal connection VDMOS power tubes simultaneously connect supply voltage VDD, the connection of the second control terminal
The drain electrode of VDMOS power tubes, third control terminal connect the grid of VDMOS power tubes, and output end connects the first capacitance C1's
One end, the other end ground connection of the first capacitance C1；The conduction voltage drop of VDMOS power tube body diodes is as supply voltage VDD.
Control module includes oscillator, charge pump circuit, voltage detecting circuit, driving circuit, first resistor R1, the second electricity
Resistance R2 and high voltage PMOS pipe MP40, oscillator connect the first control terminal with the power end of charge pump circuit, are supplied by supply voltage VDD
Electricity；The output end of the input terminal connection oscillator of charge pump circuit, output voltage connect the input terminal of voltage detecting circuit, are
Voltage detecting circuit provides supply voltage VDDH, the output of the power end and control module of supply voltage VDDH connection driving circuits
End；The Clock control end of the input terminal and oscillator of the output end connection driving circuit of voltage detecting circuit, and pass through the second electricity
The grid of connection high voltage PMOS pipe MP40 after resistance R2；The output end of driving circuit connects third control terminal；First resistor R1 is connected on
Between first control terminal and the grid of high voltage PMOS pipe MP40；The drain electrode of high voltage PMOS pipe MP40 connects the second control terminal, source
Pole is grounded.
Wherein voltage detecting circuit includes detection module, band-gap reference source module and comparator module, band gap reference mould
Block is used to generate bandgap voltage reference Vref and exports to the first input end of comparator module, and detection module includes the first NMOS
Pipe MN1, the second NMOS tube MN2, third NMOS tube MN3, the 4th NMOS tube MN4, the 5th NMOS tube MN5, the first PMOS tube MP1,
Second PMOS tube MP2, third PMOS tube MP3, the 4th PMOS tube MP4, the 5th PMOS tube MP5, the 6th PMOS tube MP6, the 7th
PMOS tube MP7,3rd resistor R3, the 4th resistance R4 and the 5th resistance R5, the first NMOS tube MN1 and the first PMOS tube MP1, second
NMOS tube MN2 and third PMOS tube MP3, third NMOS tube MN3 and the 4th PMOS tube MP4, the 4th NMOS tube MN4 and the 5th PMOS
Pipe MP5, the 5th NMOS tube MN5 and the 6th PMOS tube MP6 respectively constitute five phase inverters, and the drain electrode of the 7th PMOS tube MP7 is as electricity
The input terminal of detection circuit, source electrode is pressed to generate supply voltage VDDH, grid connects the 4th NMOS tube MN4, the 5th PMOS tube
The drain electrode of MP5, the grid of the first NMOS tube MN1 and the first PMOS tube MP1 and the 4th PMOS tube MP4 and third NMOS tube MN3；
First PMOS tube MP1, the second PMOS tube MP2, third PMOS tube MP3, the 4th PMOS tube MP4, the 5th PMOS tube MP5 and the 6th
The source electrode connection supply voltage VDDH of PMOS tube MP6；4th resistance R4 and the 5th resistance R5 series connection are attempted by supply voltage VDDH
Between the second input terminal of comparator module, 3rd resistor R3 is connected between the second input terminal of comparator module and ground；The
The drain electrode of grid connection the first PMOS tube MP1 and the first NMOS tube MN1 of two PMOS tube MP2, drain electrode pass through the 6th resistance R6
The series connection point of the 4th resistance R4 and the 5th resistance R5 is connected afterwards；The grid of the grid connection third PMOS tube MP3 of second NMOS tube MN2
The output end of pole and comparator module, source electrode connect the first NMOS tube MN1, third NMOS tube MN3, the 4th NMOS tube MN4 and
The source electrode of 5th NMOS tube MN5 and ground connection, the drain electrode of drain electrode connection third PMOS tube MP3, third NMOS tube MN3 and the 4th
The grid of PMOS tube MP4；The grid of 5th NMOS tube MN5 connects the grid of the 6th PMOS tube MP6, the 4th NMOS tube MN4 and the
The drain electrode of five PMOS tube MP5, the drain electrode of the 6th PMOS tube MP6 of drain electrode connection and the output end as voltage detecting circuit.
Band-gap reference source module is for generating an input signals of the bandgap voltage reference Vref as comparator module, such as
It is a kind of realization circuit structure of band-gap reference source module, including the 7th resistance R7, the 8th resistance R8, the one or three pole shown in Fig. 4
Pipe Q1, the second triode Q2, the 8th PMOS tube MP8, the 9th PMOS tube MP9, the tenth PMOS tube MP10 and the 11st PMOS tube
MP11, wherein the 8th PMOS tube MP8, the 9th PMOS tube MP9, the tenth PMOS tube MP10 and the 11st PMOS tube MP11 form common source
Source common-gate current mirror, the grid leak short circuit of the tenth PMOS tube MP10 and the grid and the 8th PMOS tube for connecting the 11st PMOS tube MP11
The source electrode of MP8, source electrode connect the source electrode and supply voltage VDDH of the 11st PMOS tube MP11；The grid of 9th PMOS tube MP9
The grid and the collector of drain electrode and the second triode Q2 of the 8th PMOS tube MP8 are connected, source electrode connects the 11st PMOS tube
The drain electrode of MP11, the base stage and the base stage of collector and the second triode Q2 and as band of the first triode Q1 of drain electrode connection
The output end of gap benchmark source module；7th resistance R7 and the 8th resistance R8 series connection are attempted by the emitter and ground of the second triode Q2
Between, series connection point connects the emitter of the first triode Q1.
Comparator module can use multilevel comparator, and the gain for ensureing comparator is sufficiently large, prevents comparator defeated
Go out that voltage is stuck in intermediate state, is a kind of realization circuit structure of comparator module as shown in Figure 4, including the 6th NMOS tube MN6,
7th NMOS tube MN7, the 8th NMOS tube MN8, the 12nd PMOS tube MP12, the 13rd PMOS tube MP13, the 14th PMOS tube
MP14, the 15th PMOS tube MP15, the 16th PMOS tube MP16 and the 17th PMOS tube MP17, wherein the 12nd PMOS tube
MP12, the 13rd PMOS tube MP13, the 14th PMOS tube MP14 and the 15th PMOS tube MP15 form common-source common-gate current mirror, the
First input end of the grid of 16 PMOS tube MP16 as comparator module, source electrode connect the leakage of the 15th PMOS tube MP15
The source electrode of pole and the 17th PMOS tube MP17, the grid of the 6th NMOS tube MN6 of drain electrode connection and drain electrode and the 7th NMOS tube
The grid of MN7；Second input terminal of the grid of 17th PMOS tube MP17 as comparator module, the 7th NMOS of drain electrode connection
The drain electrode of pipe MN7 and the grid of the 8th NMOS tube MN8；6th NMOS tube MN6, the 7th NMOS tube MN7 and the 8th NMOS tube MN8's
Source electrode is grounded；The drain electrode of the 8th NMOS tube MN8 of drain electrode connection of 13rd PMOS tube MP13 and the output as comparator module
It holds, the grid of the 8th PMOS tube MP8, source in the grid and band-gap reference source module of the 15th PMOS tube MP15 of grid connection
Pole connects the drain electrode of the 14th PMOS tube MP14；The grid of 12nd PMOS tube MP12 connects the grid of the 14th PMOS tube MP14
With the source electrode of the 8th PMOS tube MP8 in band-gap reference source module, the source electrode of the 15th PMOS tube MP15 of drain electrode connection, source electrode
It connects the source electrode of the 14th PMOS tube MP14 and connects supply voltage VDDH.
The operation principle of the present invention is that：When electric current flows to the second control terminal D- from the first control terminal D+ through VDMOS power tubes
When, the body diode conducting of VDMOS power tubes, if its voltage is VF1, this voltage is that module supplies supply voltage VDD in order to control
Electricity, the oscillator in control module connect supply voltage VDD with the power end of charge pump circuit；Oscillator is by voltage detecting circuit
The clock signal EN controls of output, oscillator is opened when clock signal EN is low, and oscillator turns off when clock signal EN is high；It shakes
Swing device open when generate clock signal clk and CLK_N driving charge pump circuit, charge pump circuit by for its power supply supply voltage
VDD pumps rise, output HIGH voltage CP；Voltage detecting circuit is used to detect the high voltage CP of the output of charge pump circuit, charge pump electricity
It is the first capacitance C1 that the high voltage CP of road output generates supply voltage VDDH by the 7th PMOS tube MP7 in voltage detecting circuit
Charging, when output voltage reaches preset upper limit (preset value that i.e. VDMOS power tubes are opened), output signal EN is high level,
Oscillator is turned off, the output signal of driving circuit is also high level VDDH at this time, and third control terminal G exports high level VDDH, beats
VDMOS power tubes are opened, the both ends pressure drop of VDMOS power tubes drops to VF2, control module is closed, no longer to the first capacitance C1 chargings.
It is consumed with the charge of the first capacitance C1, when the voltage on the first capacitance C1 drops to pre-determined lower limit, (i.e. VDMOS power tubes turn off
Preset value) when, control module exports low level VSS and closes VDMOS power tubes, and VDMOS power tubes both end voltage is again at this time
It is restored to VF1, charge pump circuit continuation the first capacitance of pumping voltage pair C1 chargings.Finally, the pressure drop of VDMOS power tubes both ends is in VF1
With VF2Between switch.Wherein, the preset upper limit of capacitance C1 and pre-determined lower limit are the preset upper limit of VDMOS power tubes and set in advance
Limit, is set by voltage detecting circuit, and the theoretical value of preset upper limit is more than the preset upper limit value of actual setting, pre-determined lower limit
Numerical value will make VDMOS power tubes sufficiently conductive, even if conducting resistance is as small as possible.
The driving capability of bigger is needed due to opening VDMOS power tubes, so using driving circuit by voltage detecting circuit
Output signal driving capability enhancing be connected to VDMOS power tubes grid control VDMOS power tubes.Charge pump circuit includes
Multi stage charge pump unit can be designed the series of charge pump circuit according to the value of default driving voltage, larger when needing
The charge pump of more stages can be designed when driving voltage, CP=VDD* (N+1), N are charge pump series.
It is illustrated in figure 3 a kind of output waveform of voltage detecting and controling circuit for by-pass switch proposed by the present invention
Figure.If a cycle is T, the time that VDMOS power tubes are opened is T1, the VDMOS power tube shut-in times are T2, VDMOS power tubes
The duty ratio of unlatching is as shown by the equation：
T=T1+T2。
The average conduction voltage drop of the voltage detecting and controling circuit of by-pass switch is as shown by the equation：
Vave=m*VF1+(1-m)*VF2
Due to VF1Conduction voltage drop close to diode is much larger than V againF2, and the usual very littles of duty ratio m, therefore average conducting
Pressure drop VaveMuch smaller than the conduction voltage drop of diode.
As shown in figure 5, the voltage detecting circuit for the present invention exports schematic diagram.Voltage V1 and V2 are presetting for capacitance C1
Limit and pre-determined lower limit, as effective driving voltage, the charge pump charging time is T1, discharge time T2.The efficiency of charge pump
For：
In conclusion compared to traditional Schottky bypass diode, voltage detecting and controling circuit provided by the invention is used
Make the by-pass switch of main switch in VDMOS power tubes, there is average conduction voltage drop to be substantially reduced, reversed pressure-resistant higher, leak electricity
The advantages that flowing smaller；The present invention is based on the designs that charge pump carries out by-pass switch module, and charging rank is realized by alternately operating
Section and discharge regime, charge pump convert input voltage source as driving voltage, VDMOS power tubes are driven, to improve by-pass switch
Drive efficiency, hence it is evident that reduce average conduction voltage drop makes by-pass switch control circuit using VDMOS power tubes and high pressure pressure pipe
With higher reversed pressure voltage and realize smaller electric leakage.Traditional by-pass switch module is using collector voltage to default
Voltage is changed, and charge pump pumping voltage is susceptible to concussion when voltage is higher, for bypass because fluctuation is bigger
Switch module predeterminated voltage is because of false triggering problem caused by power supply ripple is larger, built in voltage detecting circuit of the invention use
The structure of comparator has ensured the reliability of predeterminated voltage.
It is understood that the present invention is not limited to the accurate configuration being illustrated above and components.Claims are not being departed from
Protection domain on the basis of, can be to method as described above and structure the step of sequence, details and operation make various modifications and
Optimization.
Claims (3)
1. a kind of voltage detecting and controling circuit for by-pass switch, the by-pass switch makees main switch using VDMOS power tubes
Pipe, the voltage detecting and controling circuit include the first capacitance (C1) and control module, which is characterized in that the control module includes
Three control terminals and an output end, the first control terminal connect the source electrode of the VDMOS power tubes and connect supply voltage
(VDD), the second control terminal connects the drain electrode of the VDMOS power tubes, and third control terminal connects the VDMOS power tubes
Grid, output end connect one end of the first capacitance (C1), the other end ground connection of the first capacitance (C1)；The VDMOS power tubes
The conduction voltage drop of body diode is as the supply voltage (VDD)；
The control module includes oscillator, charge pump circuit, voltage detecting circuit, driving circuit, first resistor (R1), second
Resistance (R2) and high voltage PMOS pipe (MP40),
Oscillator connects first control terminal with the power end of charge pump circuit, is powered by the supply voltage (VDD)；
The input terminal of the charge pump circuit connects the output end of the oscillator, and output voltage connects the voltage detecting electricity
The input terminal on road provides supply voltage (VDDH), supply voltage (VDDH) the connection driving electricity for the voltage detecting circuit
The output end of the power end on road and the control module；
The output end of the voltage detecting circuit connects the Clock control end of the input terminal and the oscillator of the driving circuit,
And connect the grid of high voltage PMOS pipe (MP40) afterwards by second resistance (R2)；
The output end of the driving circuit connects the third control terminal；
First resistor (R1) is connected between first control terminal and the grid of high voltage PMOS pipe (MP40)；
The drain electrode of high voltage PMOS pipe (MP40) connects second control terminal, source electrode ground connection；
The voltage detecting circuit includes detection module, band-gap reference source module and comparator module, the band gap reference mould
Block is used to generate bandgap voltage reference (Vref) and exports to the first input end of the comparator module,
The detection module includes the first NMOS tube (MN1), the second NMOS tube (MN2), third NMOS tube (MN3), the 4th NMOS
Manage (MN4), the 5th NMOS tube (MN5), the first PMOS tube (MP1), the second PMOS tube (MP2), third PMOS tube (MP3), the 4th
PMOS tube (MP4), the 5th PMOS tube (MP5), the 6th PMOS tube (MP6), the 7th PMOS tube (MP7), 3rd resistor (R3), the 4th
Resistance (R4) and the 5th resistance (R5),
Input terminal of the drain electrode of 7th PMOS tube (MP7) as the voltage detecting circuit, source electrode generate the supply voltage
(VDDH), grid connects the 4th NMOS tube (MN4), the 5th PMOS tube (MP5), the first NMOS tube (MN1) and the first PMOS tube
(MP1) drain electrode of grid and the 4th PMOS tube (MP4) and third NMOS tube (MN3)；
First PMOS tube (MP1), the second PMOS tube (MP2), third PMOS tube (MP3), the 4th PMOS tube (MP4), the 5th PMOS
Pipe (MP5) connects the supply voltage (VDDH) with the source electrode of the 6th PMOS tube (MP6)；
4th resistance (R4) and the series connection of the 5th resistance (R5) are attempted by the supply voltage (VDDH) and the comparator module
Between second input terminal, 3rd resistor (R3) is connected between the second input terminal of the comparator module and ground；
The grid of second PMOS tube (MP2) connects the drain electrode of the first PMOS tube (MP1) and the first NMOS tube (MN1), and drain electrode is logical
Cross the series connection point that the 6th resistance (R6) connects the 4th resistance (R4) and the 5th resistance (R5) afterwards；
The output end of the grid and the comparator module of the grid connection third PMOS tube (MP3) of second NMOS tube (MN2),
Source electrode connects the source of the first NMOS tube (MN1), third NMOS tube (MN3), the 4th NMOS tube (MN4) and the 5th NMOS tube (MN5)
Pole is simultaneously grounded, the drain electrode of drain electrode connection third PMOS tube (MP3), the grid of third NMOS tube (MN3) and the 4th PMOS tube (MP4)
Pole；
The grid of 5th NMOS tube (MN5) connects grid, the 4th NMOS tube (MN4) and the 5th PMOS of the 6th PMOS tube (MP6)
The drain electrode of (MP5) is managed, drain electrode connects the drain electrode of the 6th PMOS tube (MP6) and as the output end of the voltage detecting circuit.
2. the voltage detecting and controling circuit according to claim 1 for by-pass switch, which is characterized in that the band gap base
Quasi- source module includes the 7th resistance (R7), the 8th resistance (R8), the first triode (Q1), the second triode (Q2), the 8th PMOS
(MP8), the 9th PMOS tube (MP9), the tenth PMOS tube (MP10) and the 11st PMOS tube (MP11) are managed,
The grid leak short circuit of tenth PMOS tube (MP10) and the grid and the 8th PMOS tube (MP8) for connecting the 11st PMOS tube (MP11)
Source electrode, source electrode connect the 11st PMOS tube (MP11) source electrode and the supply voltage (VDDH)；
The grid of 9th PMOS tube (MP9) connects the grid and drain electrode and the second triode (Q2) of the 8th PMOS tube (MP8)
Collector, source electrode connect the drain electrode of the 11st PMOS tube (MP11), the base stage sum aggregate of drain electrode the first triode of connection (Q1)
The base stage of electrode and the second triode (Q2) and as the output end of the band-gap reference source module；
7th resistance (R7) and the series connection of the 8th resistance (R8) are attempted by between the emitter and ground of the second triode (Q2), are connected
The emitter of point the first triode of connection (Q1).
3. the voltage detecting and controling circuit according to claim 2 for by-pass switch, which is characterized in that the comparator
Module includes the 6th NMOS tube (MN6), the 7th NMOS tube (MN7), the 8th NMOS tube (MN8), the 12nd PMOS tube (MP12), the
13 PMOS tube (MP13), the 14th PMOS tube (MP14), the 15th PMOS tube (MP15), the 16th PMOS tube (MP16) and
17 PMOS tube (MP17),
First input end of the grid of 16th PMOS tube (MP16) as the comparator module, source electrode connection the 15th
The source electrode of the drain electrode of PMOS tube (MP15) and the 17th PMOS tube (MP17), the grid of drain electrode the 6th NMOS tube (MN6) of connection
With drain electrode and the grid of the 7th NMOS tube (MN7)；
Second input terminal of the grid of 17th PMOS tube (MP17) as the comparator module, the 7th NMOS of drain electrode connection
Manage the grid of the drain electrode and the 8th NMOS tube (MN8) of (MN7)；6th NMOS tube (MN6), the 7th NMOS tube (MN7) and the 8th
The source electrode of NMOS tube (MN8) is grounded；
The drain electrode of 13rd PMOS tube (MP13) connects the drain electrode of the 8th NMOS tube (MN8) and as the defeated of the comparator module
Outlet, grid connect the 15th PMOS tube (MP15) grid and the band-gap reference source module in the 8th PMOS tube (MP8)
Grid, source electrode connect the 14th PMOS tube (MP14) drain electrode；
The grid of 12nd PMOS tube (MP12) connects the grid of the 14th PMOS tube (MP14) and the band-gap reference source module
In the 8th PMOS tube (MP8) source electrode, drain electrode connection the 15th PMOS tube (MP15) source electrode, source electrode connection the 14th
The source electrode of PMOS tube (MP14) simultaneously connects the supply voltage (VDDH).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201810382381.2A CN108471225B (en) | 2018-04-26 | 2018-04-26 | voltage detection control circuit for bypass switch |
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| CN201810382381.2A CN108471225B (en) | 2018-04-26 | 2018-04-26 | voltage detection control circuit for bypass switch |
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| CN108471225B CN108471225B (en) | 2019-12-10 |
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| CN201810382381.2A Expired - Fee Related CN108471225B (en) | 2018-04-26 | 2018-04-26 | voltage detection control circuit for bypass switch |
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| CN111490664A (en) * | 2019-01-29 | 2020-08-04 | 合肥格易集成电路有限公司 | Driving circuit |
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| CN114002493A (en) * | 2021-11-01 | 2022-02-01 | 广东省大湾区集成电路与系统应用研究院 | Neutral point voltage detection circuit of motor |
| CN114172363A (en) * | 2020-09-10 | 2022-03-11 | 瑞昱半导体股份有限公司 | Charge pump device |
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