CN204859594U - System on chip/SOC's electromagnetic heating control system - Google Patents

Abstract

The utility model discloses a system on chip/SOC's electromagnetic heating control system, this system include mains supply input, resonance circuit, IGBT drive circuit, MCU, switching power supply circuit, first rectification filter circuit and second rectification filter circuit, resonance circuit includes the IGBT pipe, it produces the circuit to be equipped with IGBT voltage extreme value detection circuitry and PWM in the MCU, first rectification filter circuit is the resonance circuit power supply, second rectification filter circuit is the switching power supply circuit power supply, switching power supply circuit's output is connected with MCU's power end and IGBT drive circuit's power end respectively, IGBT drive circuit connects between the output of PWM production circuit and resonance circuit's drive control input, IGBT voltage extreme value detection circuitry's the test input end and the collecting electrode of IGBT pipe are connected, and it detects the output and is connected with the input that PWM produced the circuit. The utility model discloses excellent that the loss is hanged down and the reliability is high have.

Description

The electromagnetic heating control system of SOC (system on a chip)

Technical field

The utility model relates to control field, particularly a kind of electromagnetic heating control system of SOC (system on a chip).

Background technology

Electromagnetic heating control system of the prior art, to in system for the normally synchronous triggering and conducting mode of the triggering and conducting mode of the IGBT pipe of control system heated condition, and the defect that this synchronous triggering and conducting mode exists is: when this electromagnetic heating control system is in low-power heated condition (when the conducting pulsewidth of IGBT pipe is less) or line voltage is higher time, IGBT pipe conducting under certain voltage (firmly open-minded) can be made, and when IGBT pipe is under certain voltage during conducting, its turn-on consumption is larger; Further, when IGBT pipe is under certain voltage during conducting, the temperature rise of IGBT pipe is higher, thus can cause decline the useful life of IGBT pipe.

With reference to Fig. 1, Fig. 1 is the electrical block diagram of electromagnetic heating control system one embodiment in prior art, and this electromagnetic heating control system comprises power input 101, IGBT drive circuit 102, MCUA11, heater coil disc LH1, IGBT pipe Q1, electric capacity C1, electric capacity C2, electric capacity C3, resonant capacitance C4, resistance R11, resistance R12, resistance R13, resistance R14, resistance R15, resistance R16, resistance R17, resistance R18, resistance R19, resistance R20, resistance RK1 and diode D11.Wherein, MCUA11 inside comprises voltage comparator A11-U1 and PWM generation module A11-U2, and the power supply that power input 101 inputs is the mains supply after rectification.Particularly, the first end OUT11 of heater coil disc LH1 and the first end of resonant capacitance C4 are all connected with power input 101, and second end of resonant capacitance C4 is connected with the second end OUT12 of heater coil disc LH1 and the collector electrode C of IGBT pipe Q1 respectively; The first end of resistance R11 is connected with the first end of resonant capacitance C4, and the resistance R12 of the second end through being connected in series of resistance R11, resistance R13 and resistance R14 are connected with the first end of resistance R15, and second end of resistance R15 is through resistance R16 ground connection; The first end of electric capacity C1 is connected with the first end of resistance R15, the second end ground connection of electric capacity C1; The first end of resistance R15 is also connected with the in-phase input end of the voltage comparator A11-U1 of MCUA11 inside; The first end of resistance R17 is connected with second end of resonant capacitance C4, and second end of resistance R17 is connected with the first end of resistance R19 through resistance R18, and second end of resistance R19 is through resistance R20 ground connection; The first end of electric capacity C3 is connected with the first end of resistance R19, the second end ground connection of electric capacity C3; The first end of electric capacity C2 is connected with the first end of resistance R15, and second end of electric capacity C2 is connected with the first end of resistance R19; The anode of diode D11 is connected with the first end of resistance R19, the minus earth of diode D11; The first end of resistance R19 is also connected with the inverting input of the voltage comparator A11-U1 of MCUA11 inside; The output of the voltage comparator A11-U1 of MCUA11 inside is connected with the input of PWM generation module A11-U2, and the output of PWM generation module A11-U2 is connected with the input of IGBT drive circuit 102; The output of IGBT drive circuit 102 is connected with the gate pole G of IGBT pipe Q1; The emitter E of IGBT pipe Q1 is through resistance RK1 ground connection.

Electromagnetic heating control system shown in Fig. 1, be exactly synchronous triggering and conducting mode to the triggering and conducting mode of IGBT pipe Q1, its operation principle is as follows: when the Q1 conducting of IGBT pipe, heater coil disc LH1 has electric current to flow to the second end OUT12 of heater coil disc LH1 from the first end OUT11 of heater coil disc LH1, now first end (lower end) voltage of resonant capacitance C4 is through resistance R11, resistance R12, resistance R13, resistance R14, voltage signal Va after resistance R15 and resistance R16 dividing potential drop inputs the in-phase input end of the voltage comparator A11-U1 of MCUA11 inside, second end (upper end) voltage of resonant capacitance C4 is through resistance R17, resistance R18, voltage signal Vb after resistance R19 and resistance R20 dividing potential drop inputs the inverting input of the voltage comparator A11-U1 of MCUA11 inside, now under resonant capacitance C4, terminal voltage is clamped at the voltage (i.e. line voltage) of power input 101, and the upper terminal voltage of resonant capacitance C4 is moved to ground level by IGBT pipe Q1, i.e. now voltage Va> voltage Vb, when IGBT pipe Q1 turns off, due to the inductive effect of heater coil disc LH1, the electric current of heater coil disc LH1 can not suddenly change, electric current continues the second end OUT12 flowing to heater coil disc LH1 from the first end OUT11 of heater coil disc LH1, and charge to resonant capacitance C4, the upper terminal voltage of resonant capacitance C4 is constantly raised, until the electric current release on heater coil disc LH1 is complete.When the electric current of heater coil disc LH1 is 0, on resonant capacitance C4, terminal voltage reaches the highest, now voltage Va< voltage Vb.As voltage Va< voltage Vb, resonant capacitance C4 starts to discharge to heater coil disc LH1, now electric current flows to the first end OUT11 of heater coil disc LH1 from the second end OUT12 of heater coil disc LH1, until the electric energy release of resonant capacitance C4 complete (when the electric energy release of resonant capacitance C4 is complete, the lower terminal voltage of resonant capacitance C4 equals terminal voltage on it).When the electric energy release of resonant capacitance C4 is complete, heater coil disc LH1 still also have electric current flow from upper end to lower end, now the lower terminal voltage of resonant capacitance C4 is clamped at line voltage, the upper terminal voltage of resonant capacitance C4 is constantly dragged down, until during voltage Vb< voltage Va, produce the pulse signal of a rising edge at the output of voltage comparator A11-U1, the pulse signal of this rising edge triggers PWM generation module A11-U2 and produces the conducting pulsewidth that makes IGBT pipe Q1 conducting.After this, above-mentioned steps is repeated.Electromagnetic heating control system shown in Fig. 1, owing to being synchronous triggering and conducting mode to the triggering and conducting mode of IGBT pipe Q1, therefore, when this electromagnetic heating control system is in low-power heated condition or when line voltage is higher, IGBT pipe Q1 turn-on consumption can be made larger, meanwhile, can cause decline the useful life of IGBT pipe Q1.

Utility model content

Main purpose of the present utility model is to provide a kind of low in energy consumption and electromagnetic heating control system of the SOC (system on a chip) that reliability is high.

For achieving the above object, the utility model provides a kind of electromagnetic heating control system of SOC (system on a chip), the electromagnetic heating control system of this SOC (system on a chip) is the resonance heating work for controlling electromagnetic heater, it is characterized in that, the electromagnetic heating control system of described SOC (system on a chip) comprises mains input, for carrying out the resonant circuit of resonance heating to described electromagnetic heater, for driving the IGBT drive circuit of described resonant circuit work, for controlling the MCU of the heating work of described resonant circuit, for the switching power circuit of powering for described MCU and described IGBT drive circuit, for carrying out rectifying and wave-filtering to described mains supply and first current rectifying and wave filtering circuit of powering for described resonant circuit, for carrying out rectifying and wave-filtering to described mains supply and second current rectifying and wave filtering circuit of powering for described switching power circuit, described resonant circuit comprises the IGBT pipe of the heated condition for controlling described resonant circuit, the inside of described MCU is provided with IGBT voltage extremity testing circuit that the voltage extremity for the collector electrode to described IGBT pipe detects and produces circuit to described IGBT drive circuit with the PWM controlling the switch motion of described IGBT pipe for exporting corresponding pwm signal according to the testing result of described IGBT voltage extremity testing circuit, wherein,

The input of described first current rectifying and wave filtering circuit and the input of described second current rectifying and wave filtering circuit are all connected with described mains input, the output of described first current rectifying and wave filtering circuit is connected with the power input of described resonant circuit, and the output of described second current rectifying and wave filtering circuit is connected with the input of described switching power circuit; The output of described switching power circuit is connected with the power end of described MCU and the power end of described IGBT drive circuit respectively; The output that input and the described PWM of described IGBT drive circuit produce circuit is connected, and the output of described IGBT drive circuit is connected with the drived control input of described resonant circuit; The detection input of described IGBT voltage extremity testing circuit is connected with the collector electrode of described IGBT pipe, and the detection output of described IGBT voltage extremity testing circuit is connected with the input that described PWM produces circuit.

Preferably, the electromagnetic heating control system of described SOC (system on a chip) also comprises the civil power zero cross detection circuit for detecting the zero crossing of described mains supply; The detection input of described civil power zero cross detection circuit is connected with the output of described second current rectifying and wave filtering circuit, the detection output of described civil power zero cross detection circuit is connected with first signal input part of described MCU, described MCU when described civil power zero cross detection circuit detects the zero passage of described mains supply, shield described IGBT voltage extremity testing circuit detection output function and control described PWM produce circuit preset time period in export preset duty when predeterminated frequency pwm signal to described IGBT drive circuit to control the switch motion of described IGBT pipe.

Preferably, the detection input of described IGBT voltage extremity testing circuit is connected with the collector electrode of the described IGBT pipe in described resonant circuit, the detection output of described IGBT voltage extremity testing circuit is connected with the input that described PWM produces circuit, described IGBT voltage extremity testing circuit, when the voltage of the collector electrode described IGBT pipe being detected is minimum point voltage, controls described PWM generation circuit and exports the conducting pulsewidth that makes the conducting of described IGBT pipe.

Preferably, described IGBT voltage extremity testing circuit comprises bleeder circuit unit and active differentiator unit; Wherein,

The input of described bleeder circuit unit is connected with the collector electrode of described IGBT pipe, and the output of described bleeder circuit unit is connected with the input of described active differentiator unit; The input that output and the described PWM of described active differentiator unit produce circuit is connected.

Preferably, described active differentiator unit comprises the first voltage comparator of the first operating voltage input, the first resistance, the second resistance, the 3rd resistance, the 4th resistance, the first electric capacity, the second electric capacity and described MCU205 inside; Wherein,

The first end of described first electric capacity is connected with the output of described bleeder circuit unit, and the second end of described first electric capacity is connected through the first end of the first resistance with the second resistance; Second end of described second resistance is connected with the output of described first voltage comparator; The input that the output of described first voltage comparator also produces circuit with described PWM is connected; Described second electric capacity and described second resistor coupled in parallel; The first end of described second resistance is also connected with the inverting input of described first voltage comparator; The in-phase input end of described first voltage comparator is connected with the first end of described 3rd resistance and the first end of described 4th resistance respectively; Second end of described 3rd resistance is connected with described first operating voltage input; Second end ground connection of described 4th resistance.

Preferably, described PWM produce circuit comprise the 5th resistance, the 6th resistance, the second voltage comparator of described MCU205 inside, described MCU205 inside with the PWM generation module of door and described MCU205 inside; Wherein,

The in-phase input end of described second voltage comparator is connected with the output of described first voltage comparator, and the inverting input of described second voltage comparator is connected with the first end of described 5th resistance and the first end of described 6th resistance respectively; Second end of described 5th resistance is connected with described first operating voltage input; Second end ground connection of described 6th resistance; The output of described second voltage comparator is connected with the first input end of door with described; Describedly to be connected with the output of described PWM generation module with the first input end of door; Describedly to be connected with the input of described PWM generation module with the output of door; The output of described PWM generation module is also connected with the input of described IGBT drive circuit.

Preferably, the electromagnetic heating control system of described SOC (system on a chip) also comprises the line voltage testing circuit for detecting the voltage of described mains supply; The detection input of described line voltage testing circuit is connected with the output of described second current rectifying and wave filtering circuit, and the detection output of described line voltage testing circuit is connected with the secondary signal input of described MCU.

Preferably, the electromagnetic heating control system of described SOC (system on a chip) also comprises IGBT current detection circuit for detecting the electric current of described IGBT pipe and the IGBT over-voltage detection circuit for the collector voltage whether overvoltage that detects described IGBT pipe; The detection input of described IGBT current detection circuit is connected with the current output terminal of described IGBT pipe, and the detection output of described IGBT current detection circuit is connected with the 3rd signal input part of described MCU; The detection input of described IGBT over-voltage detection circuit is connected with the collector electrode of described IGBT pipe, and the detection output of described IGBT over-voltage detection circuit is connected with the 4th signal input part of described MCU.

Preferably, the electromagnetic heating control system of described SOC (system on a chip) also comprises the keypad communication interface circuit of the set value of the power for inputting described electromagnetic heater and the civil power surge testing circuit for detecting the surge of described mains supply; The power end of described keypad communication interface circuit is connected with described switching power circuit, and the output of described keypad communication interface circuit is connected with the 5th signal input part of described MCU; The detection input of described civil power surge testing circuit is connected with the output of described second current rectifying and wave filtering circuit, and the detection output of described civil power surge testing circuit is connected with the 6th signal input part of described MCU.

Preferably, the collector voltage that the electromagnetic heating control system of described SOC (system on a chip) is also included in the described IGBT pipe that the electric current that line voltage is greater than default line voltage value, described IGBT current detection circuit detects is greater than default current value, described IGBT over-voltage detection circuit detects that described line voltage testing circuit detects is greater than the civil power surge that default collector voltage value or described civil power surge testing circuit detect and is greater than default surge value, for sending the warning device of alarm sound; The power end of described warning device is connected with described switching power circuit, and the control input end of described warning device is connected with described MCU.

The electromagnetic heating control system of the SOC (system on a chip) that the utility model provides, for controlling the resonance heating work of electromagnetic heater, the electromagnetic heating control system of described SOC (system on a chip) comprises mains input, for carrying out the resonant circuit of resonance heating to described electromagnetic heater, for driving the IGBT drive circuit of described resonant circuit work, for controlling the MCU of the heating work of described resonant circuit, for the switching power circuit of powering for described MCU and described IGBT drive circuit, for carrying out rectifying and wave-filtering to mains supply and first current rectifying and wave filtering circuit of powering for described resonant circuit, for carrying out rectifying and wave-filtering to mains supply and second current rectifying and wave filtering circuit of powering for described switching power circuit, described resonant circuit comprises the IGBT pipe of the heated condition for controlling described resonant circuit, the inside of described MCU is provided with IGBT voltage extremity testing circuit that the voltage extremity for the collector electrode to described IGBT pipe detects and produces circuit to described IGBT drive circuit with the PWM controlling the switch motion of described IGBT pipe for exporting corresponding pwm signal according to the testing result of described IGBT voltage extremity testing circuit, the input of described first current rectifying and wave filtering circuit and the input of described second current rectifying and wave filtering circuit are all connected with described mains input, the output of described first current rectifying and wave filtering circuit is connected with the power input of described resonant circuit, and the output of described second current rectifying and wave filtering circuit is connected with the input of described switching power circuit, the output of described switching power circuit is connected with the power end of described MCU and the power end of described IGBT drive circuit respectively, the output that input and the described PWM of described IGBT drive circuit produce circuit is connected, and the output of described IGBT drive circuit is connected with the drived control input of described resonant circuit, the detection input of IGBT voltage extremity testing circuit is connected with the collector electrode of described IGBT pipe, and the input that detection output and the described PWM of GBT voltage extremity testing circuit produce circuit is connected.The electromagnetic heating control system of this SOC (system on a chip) that the utility model provides has the advantage that power loss is low and reliability is high; Meanwhile, the electromagnetic heating control system of the utility model SOC (system on a chip) also has circuit structure advantage that is simple and that easily realize.

Accompanying drawing explanation

Fig. 1 is the electrical block diagram of electromagnetic heating control system one embodiment in prior art;

Fig. 2 is the modular structure schematic diagram of electromagnetic heating control system one embodiment of the utility model SOC (system on a chip);

Fig. 3 is IGBT voltage extremity testing circuit in electromagnetic heating control system one embodiment of the utility model SOC (system on a chip), the circuit connection structure schematic diagram of PWM generation between circuit, resonant circuit and IGBT drive circuit.

The realization of the utility model object, functional characteristics and advantage will in conjunction with the embodiments, are described further with reference to accompanying drawing.

Embodiment

Should be appreciated that specific embodiment described herein only in order to explain the utility model, and be not used in restriction the utility model.

The utility model provides a kind of electromagnetic heating control system of SOC (system on a chip).

With reference to the modular structure schematic diagram that Fig. 2, Fig. 2 are electromagnetic heating control system one embodiments of the utility model SOC (system on a chip).

In the present embodiment, the electromagnetic heating control system of this SOC (system on a chip) is the resonance heating work for controlling electromagnetic heater.The electromagnetic heating control system of the present embodiment SOC (system on a chip) comprises mains input 201, first current rectifying and wave filtering circuit 202, second current rectifying and wave filtering circuit 203, resonant circuit 204, MCU205, switching power circuit 206 and IGBT drive circuit 207.

Wherein, described mains input 201, for inputting mains supply, the electromagnetic heating control system for the present embodiment SOC (system on a chip) provides power supply electric energy;

Described first current rectifying and wave filtering circuit 202, the mains supply for inputting described mains input 201 carries out rectifying and wave-filtering and provides supply power voltage for described resonant circuit 204;

Described second current rectifying and wave filtering circuit 203, the mains supply for inputting described mains input 201 carries out rectifying and wave-filtering and provides supply power voltage for described switching power circuit 206;

Described resonant circuit 204, for carrying out resonance heating to described electromagnetic heater;

Described MCU205, for controlling the heating work of described resonant circuit 204;

Described switching power circuit 206, for providing supply power voltage for the electromagnetic heating control system of the present embodiment SOC (system on a chip), namely the supply power voltage of described MCU205 and the supply power voltage of described IGBT drive circuit 207 provide by described switching power circuit 206;

Described IGBT drive circuit 207, works for driving described resonant circuit 204.

In the present embodiment, described resonant circuit 204 comprises the IGBT pipe (not shown) of the heated condition for controlling described resonant circuit 204; The inside of described MCU205 is provided with IGBT voltage extremity testing circuit 2051 that the voltage extremity for the collector electrode to described IGBT pipe detects and produces circuit 2052 to described IGBT drive circuit 207 with the PWM controlling the switch motion of the described IGBT pipe in described resonant circuit 204 for exporting corresponding pwm signal according to the testing result of described IGBT voltage extremity testing circuit 2051.

Particularly, in the present embodiment, the input of described first current rectifying and wave filtering circuit 202 and the input of described second current rectifying and wave filtering circuit 203 are all connected with described mains input 201, the output of described first current rectifying and wave filtering circuit 202 is connected with the power input of described resonant circuit 204, and the output of described second current rectifying and wave filtering circuit 203 is connected with the input of described switching power circuit 206; The output of described switching power circuit 206 is connected with the power end of described MCU205 and the power end of described IGBT drive circuit 207 respectively; The output that input and the described PWM of described IGBT drive circuit 207 produce circuit 2052 is connected, and the output of described IGBT drive circuit 206 is connected with the drived control input of described resonant circuit 204; The detection input of described IGBT voltage extremity testing circuit 2051 is connected with the collector electrode of the described IGBT pipe in described resonant circuit 204, and the detection output of described IGBT voltage extremity testing circuit 2051 is connected with the input that described PWM produces circuit 2052.

Further, the electromagnetic heating control system of the present embodiment SOC (system on a chip) also comprises civil power zero cross detection circuit 208, and described civil power zero cross detection circuit 208 is for detecting the zero crossing of mains supply.Particularly, the detection input of described civil power zero cross detection circuit 208 is connected with the output of described second current rectifying and wave filtering circuit 203, and the detection output of described civil power zero cross detection circuit 208 is connected with first signal input part of described MCU205.

Further, the electromagnetic heating control system of the present embodiment SOC (system on a chip) also comprises line voltage testing circuit 209, and described line voltage testing circuit 209 is for detecting the voltage of described mains supply.Particularly, the detection input of described line voltage testing circuit 209 is connected with the output of described second current rectifying and wave filtering circuit 203, and the detection output of described line voltage testing circuit 209 is connected with the secondary signal input of described MCU205.

Further, the electromagnetic heating control system of the present embodiment SOC (system on a chip) also comprises IGBT current detection circuit 210 and IGBT over-voltage detection circuit 211;

Wherein, described IGBT current detection circuit 210, for detecting the electric current of IGBT pipe described in described resonant circuit 204;

Described IGBT over-voltage detection circuit 211, for detecting the collector voltage whether overvoltage of described IGBT pipe.

Particularly, the detection input of described IGBT current detection circuit 210 is connected with the current output terminal of the described IGBT pipe in described resonant circuit 204, and the detection output of described IGBT current detection circuit 210 is connected with the 3rd signal input part of described MCU205; The detection input of described IGBT over-voltage detection circuit 211 is connected with the collector electrode of the described IGBT pipe in described resonant circuit 204, and the detection output of described IGBT over-voltage detection circuit 211 is connected with the 4th signal input part of described MCU205.

Further, the electromagnetic heating control system of the present embodiment SOC (system on a chip) also comprises key board communications interface circuit 215, and described key board communications interface circuit 215 is for inputting the set value of the power of described electromagnetic heater.The power end of described keypad communication interface circuit 215 is connected with described switching power circuit 206 (namely the supply power voltage of described keypad communication interface circuit 215 is provided by described switching power circuit 206), and the output of described keypad communication interface circuit 215 is connected with the 5th signal input part of described MCU205.

Further, the electromagnetic heating control system of the present embodiment SOC (system on a chip) also comprises civil power surge testing circuit 216, and described civil power surge testing circuit 216 is for detecting the surge of mains supply.The detection input of described civil power surge testing circuit 216 is connected with the output of described second current rectifying and wave filtering circuit 203, and the detection output of described civil power surge testing circuit 216 is connected with the 6th signal input part of described MCU205.

Further, the electromagnetic heating control system of the present embodiment SOC (system on a chip) also comprises IGBT temperature detection circuit 212, furnace temperature testing circuit 213 and fan drive circuit 214;

Wherein, described IGBT temperature detection circuit 212, for detecting the temperature of the described IGBT pipe in described resonant circuit 205;

Described furnace temperature testing circuit 213, for detecting the furnace temperature of described electromagnetic heater;

Described fan drive circuit 214, for controlling the rotating speed of described electromagnetic heater fan according to the testing result of described IGBT temperature detection circuit 212 and described furnace temperature testing circuit 213, to regulate the temperature of described electromagnetic heater.

Particularly, the power end of described IGBT temperature detection circuit 212, the power end of described furnace temperature testing circuit 213 and the power end of described fan drive circuit 214 are all connected with described switching power circuit 206 (the i.e. supply power voltage of described IGBT temperature detection circuit 212, the supply power voltage of described furnace temperature testing circuit 213 and the supply power voltage of described fan drive circuit 214 provide by described switching power circuit 206), the detection output of described IGBT temperature detection circuit 212 is connected with the 7th signal input part of described MCU205, the detection output of described furnace temperature testing circuit 213 is connected with the 8th signal input part of described MCU205, the input of described fan drive circuit 214 is connected with the control signal output of described MCU205, and the output of described fan drive circuit 214 is connected with the control input end of described electromagnetic heater fan.

Further, the electromagnetic heating control system of the present embodiment SOC (system on a chip) also comprises warning device 217.In the present embodiment, when the civil power surge that collector voltage is greater than default collector voltage value, described civil power surge testing circuit 216 detects of the described IGBT pipe that the electric current that the line voltage that described line voltage testing circuit 209 detects is greater than default line voltage value, described IGBT current detection circuit 210 detects is greater than default current value, described IGBT over-voltage detection circuit 211 detects be greater than furnace temperature temperature that default surge value or described furnace temperature testing circuit 213 detect be greater than default furnace temperature value time, described warning device 217 sends alarm sound.

In the present embodiment, the power end of described warning device 217 is connected with described switching power circuit 206 (namely the supply power voltage of described warning device 217 is provided by described switching power circuit 206), and the control input end of described warning device 217 is connected with described MCU205.

In the present embodiment, the alarm appliance in described warning device 217 is buzzer.

The operation principle of the electromagnetic heating control system of the present embodiment SOC (system on a chip) and workflow specifically describe as follows:

(1) mains supply that inputs of described mains input 201 is after the rectifying and wave-filtering of described first current rectifying and wave filtering circuit 202, becomes level and smooth direct current, is supplied to described resonant circuit 204; The mains supply that described mains input 201 inputs is after the rectifying and wave-filtering of described second current rectifying and wave filtering circuit 203, become level and smooth direct current, be supplied to described switching power circuit 206, for the work of the electromagnetic heating control system of the present embodiment SOC (system on a chip) provides supply power voltage;

(2) when the electromagnetic heating control system of the present embodiment SOC (system on a chip) enters heated condition, first, the zero crossing of described civil power zero cross detection circuit 208 pairs of mains supplies detects, when described civil power zero cross detection circuit 208 detects the zero passage of described mains supply, described MCU205 shields the detection output function of described IGBT voltage extremity testing circuit 2051; Then, described MCU205 control described PWM produce circuit 2052 preset time period in export preset duty when predeterminated frequency pwm signal (if duty ratio is 50%, frequency is 20Khz) to described IGBT drive circuit 207 to control the switch motion of the IGBT pipe in described resonant circuit 204; Then, when Preset Time then, the detection output function of the enable described IGBT voltage extremity testing circuit 2051 of described MCU205; Again then, when described IGBT voltage extremity testing circuit 2051 detects that the collector voltage of described IGBT pipe is minimum point voltage, described MCU205 controls described PWM generation circuit 2052 and produces the conducting pulsewidth that makes the described IGBT pipe conducting in described resonant circuit 204.Until when described civil power zero cross detection circuit 208 detects the zero passage of described mains supply next time, repeat above-mentioned steps.The electromagnetic heating control system of the present embodiment SOC (system on a chip) is IGBT pipe described in conducting during minimum point voltage owing to being the collector voltage of described IGBT pipe in described resonant circuit 204, therefore, the electromagnetic heating control system of the present embodiment SOC (system on a chip) has the low advantage of power loss.

(3) when the electromagnetic heating control system of the present embodiment SOC (system on a chip) is in heating process, the electric current of IGBT pipe described in described resonant circuit 204 is flow through detected by the line voltage of described MCU205 detected by described line voltage testing circuit 209 and described IGBT current detection circuit 210, control described PWM generation circuit 2052 and export corresponding pwm signal, to regulate ON time and the shut-in time of IGBT pipe described in described resonant circuit 204, thus regulate the heating power of the electromagnetic heating control system of the present embodiment SOC (system on a chip);

(4) when the electromagnetic heating control system of the present embodiment SOC (system on a chip) is in heating process, the temperature of the IGBT pipe of described MCU205 detected by described IGBT temperature detection circuit 212 and the furnace temperature detected by described furnace temperature testing circuit 213, export and control signal to described fan drive circuit 214 accordingly, to regulate the rotating speed of the fan in described electromagnetic heater, and then regulate the temperature of described electromagnetic heater;

(5) when the electromagnetic heating control system of the present embodiment SOC (system on a chip) is in heating process, the set value of the power that described MCU205 inputs according to described keypad communication interface circuit 215, control described PWM generation circuit 2052 and export corresponding pwm signal, to regulate ON time and the shut-in time of IGBT pipe described in described resonant circuit 204, thus regulate the heating power of the electromagnetic heating control system of the present embodiment SOC (system on a chip);

(6) when the electromagnetic heating control system of the present embodiment SOC (system on a chip) is in heating process, described line voltage testing circuit 209 detects line voltage in real time, described IGBT current detection circuit 210 detects the electric current of IGBT pipe described in described resonant circuit 204 in real time, described IGBT over-voltage detection circuit 211 detects the collector voltage of described IGBT pipe in real time, described civil power surge testing circuit 216 detects civil power surge in real time, described furnace temperature testing circuit 213 detects furnace temperature in real time, the line voltage detected when described line voltage testing circuit 209 is greater than default line voltage value, the electric current that described IGBT current detection circuit 210 detects is greater than default current value, the collector voltage of the described IGBT pipe that described IGBT over-voltage detection circuit 211 detects is greater than default collector voltage value, the surge that described civil power surge testing circuit 216 detects is greater than furnace temperature temperature that default surge value or described furnace temperature testing circuit 213 detect when being greater than default furnace temperature value, described MCU205 exports the control input end controlling signal to described warning device 217 accordingly, alarm sound is sent with the buzzer controlled in described warning device 217.

Fig. 3 is IGBT voltage extremity testing circuit in electromagnetic heating control system one embodiment of the utility model SOC (system on a chip), the circuit connection structure schematic diagram of PWM generation between circuit, resonant circuit and IGBT drive circuit.

In the lump with reference to Fig. 2 and Fig. 3, in the present embodiment, described resonant circuit 204 comprises resonant capacitance C21, heater coil disc LH2, resistance R21, resistance RK2, voltage stabilizing didoe D21 and IGBT pipe Q2;

Particularly, the first end OUT21 of described heater coil disc LH2 connects with the output terminals A of described first current rectifying and wave filtering circuit 202 and the first end (corresponding number in the figure is that end of 1) of described resonant capacitance C21 respectively, and the first end OUT22 of described heater coil disc LH2 connects with second end (corresponding number in the figure is that end of 2) of described resonant capacitance C21 and the collector electrode C of described IGBT pipe Q2 respectively; The collector electrode C of described IGBT pipe Q2 is also connected with the detection input of described IGBT voltage extremity testing circuit 2051; The gate pole G of described IGBT pipe Q2 is connected with the output of described IGBT drive circuit (the gate pole G of described IGBT pipe Q2 is the drived control input of described resonant circuit 204), and the emitter E of described IGBT pipe Q2 is through described resistance RK2 ground connection; The negative electrode of described voltage stabilizing didoe D21 is connected with the gate pole G of described IGBT pipe Q2, and the anode of described voltage stabilizing didoe D21 is connected with the emitter E of described IGBT pipe Q2; Described resistance R21 is in parallel with described voltage stabilizing didoe D21.

In the present embodiment, described IGBT drive circuit 207 comprises resistance R22, resistance R23, resistance R24, resistance R25, resistance R26, electric capacity C22, electric capacity C23 and IGBT driving chip 2071;

Particularly, described resistance R22 and described resistance R23 is in parallel, described resistance R22 is connected with the gate pole G of the one end after described resistance R23 parallel connection with described IGBT pipe Q2, and described resistance R22 is connected with described IGBT driving chip 2071 output OUT with the other end after described resistance R23 parallel connection, first power end VCC of described IGBT driving chip 2071 is connected (in the present embodiment through resistance R24 with the first operating voltage input VCC1, described first operating voltage input VCC1 is connected with the output of described switching power circuit 206, the voltage of described first operating voltage input VCC1 is 5V), first power end VCC of described IGBT driving chip 2071 is also through electric capacity C23 ground connection, the input IN of described IGBT driving chip 2071 is connected with the first end of resistance R25, (namely corresponding label is that end of PWM21 to second end of resistance R25, also the input of i.e. described IGBT drive circuit 207) be connected with the output that described PWM produces circuit 2052, the second source end VDD of described IGBT driving chip 2071 is connected with the first end of electric capacity C22, the second end ground connection of electric capacity C22, the ground end ground connection of described IGBT driving chip 2071, the first end of electric capacity C22 is also connected with the second operating voltage input VCC2 (in the present embodiment, described second operating voltage input VCC2 is connected with the output of described switching power circuit 206), the output that described second operating voltage input VCC2 also produces circuit 2052 through resistance R26 and described PWM is connected.

In the present embodiment, described IGBT voltage extremity testing circuit 2051 comprises bleeder circuit unit (being made up of resistance R27, resistance R28, resistance R29, resistance R30, electric capacity C24 and diode D22) and active differentiator unit 20511.Wherein, the input of described bleeder circuit unit is connected with the collector electrode of described IGBT pipe Q2, and the output of described bleeder circuit unit is connected with the input of described active differentiator unit 20511; The input that output and the described PWM of described active differentiator unit 20511 produce circuit 2052 is connected.

Particularly, the first end of the described resistance R27 in described bleeder circuit unit (resistance R27 lower end in corresponding diagram, also be the detection input of described IGBT voltage extremity testing circuit 2051) be connected with the collector electrode C of described IGBT pipe Q2, second end of described resistance R27 is connected with the first end of described resistance R29 through resistance R28, and second end of described resistance R29 is through resistance R30 ground connection; Second end of described resistance R29 is also connected with the anode of described diode D22; The negative electrode of described diode D22 is connected with described first operating voltage input VCC1; Described electric capacity C24 is in parallel with described resistance R30;

Described active differentiator unit 20511 comprises the first voltage comparator A21-U4 of the first operating voltage input VCC1, the first resistance R31, the second resistance R32, the 3rd resistance R33, the 4th resistance R34, the first electric capacity C25, the second electric capacity C26 and described MCU205 inside.

Particularly, the first end (i.e. the input of described active differentiator unit 20511) of described first electric capacity C25 is connected with the first end (being also the output of above-mentioned bleeder circuit unit) of described resistance R29, and second end of described first electric capacity C25 is connected with the first end of the second resistance R32 through the first resistance R31; Second end of described second resistance R32 is connected with the output of described first voltage comparator A21-U4; The output of described first voltage comparator A21-U4 also produces circuit 2052 input with described PWM is connected; Described second electric capacity C26 is in parallel with described second resistance R32; The first end of described second resistance R32 is also connected with the inverting input of described first voltage comparator A21-U4 (voltage of the inverting input of described first voltage comparator A21-U4 is Vaa); The in-phase input end of described first voltage comparator A21-U4 is connected (voltage of the in-phase input end of described first voltage comparator A21-U4 is Vbb) with the first end of described 3rd resistance R33 and the first end of described 4th resistance R34 respectively; Second end of described 3rd resistance R33 is connected with described first operating voltage input VCC1; The second end ground connection of described 4th resistance R34.

In the present embodiment, described PWM produce circuit 2052 comprise the 5th resistance R35, the 6th resistance R36, the second voltage comparator A21-U1 of described MCU205 inside, described MCU205 inside with the PWM generation module A21-U3 of door A21-U2 and described MCU205 inside.

Particularly, the in-phase input end of described second voltage comparator A21-U1 is connected with the output (being also the detection output of described IGBT voltage extremity testing circuit 2051) of described first voltage comparator A21-U4, and the inverting input of described second voltage comparator A21-U1 is connected with the first end of described 5th resistance R35 and the first end of described 6th resistance R36 respectively; Second end of described 5th resistance R35 is connected with described first operating voltage input VCC1; The second end ground connection of described 6th resistance R36; The output of described second voltage comparator A21-U1 is connected with the first input end IN1 of door A21-U2 with described; Describedly to be connected with the output of described PWM generation module A21-U3 with the first input end IN2 of door A21-U2; Describedly to be connected with the input of described PWM generation module A21-U3 with the output of door A21-U2; The output (being also the PWM pin of described MCU205) of described PWM generation module A21-U3 is also connected with second end of the described resistance R25 in described IGBT drive circuit 207.

In the present embodiment, described IGBT voltage extremity testing circuit 2051 detects the voltage waveform of the collector electrode C of IGBT pipe Q2 described in described resonant circuit 204 in real time, described IGBT voltage extremity testing circuit 2051 can capture the extreme point (comprising peak voltage and minimum point voltage) of the voltage waveform of the collector electrode C of described IGBT pipe Q2 in real time, when the collector voltage that described IGBT voltage extremity testing circuit 2051 detects described IGBT pipe Q2 is minimum point voltage, described PWM produces circuit 2052 and will export the conducting pulsewidth making described IGBT pipe Q2 conducting, described IGBT pipe Q2 is made to be in conducting state.

Described IGBT voltage extremity testing circuit 2051 in the present embodiment adopts active differentiator unit 20511 to realize the measuring ability of the voltage extremity of the collector electrode C to IGBT pipe Q2, active differentiator has the wide advantage of response band, when the system frequency of the present embodiment changes in the scope of 20KHz-30KHz, described IGBT voltage extremity testing circuit 2051 can both detect the voltage extremity point of the collector electrode C of IGBT pipe Q2 very accurately, time deviation can control in ns level, namely the described IGBT voltage extremity testing circuit 2051 in the present embodiment adopts active differentiator to realize, stability and the reliability that can improve the present embodiment (it should be noted that, in other embodiments, also passive differential circuit can be adopted to detect the voltage extremity of the collector electrode of IGBT pipe Q2).

In the present embodiment, the collector voltage of described IGBT voltage extremity testing circuit 2051 to described IGBT pipe Q2 detects, when the collector voltage described IGBT pipe Q2 being detected is minimum point voltage, the operation principle and the workflow that control described IGBT pipe Q2 conducting specifically describe as follows:

(1) electromagnetic heating control system of the present embodiment SOC (system on a chip) is in resonance heating process, when described IGBT pipe Q2 is in conducting state (in the present embodiment, during the output output low level signal of described PWM generation module A21-U3, described IGBT pipe Q2 conducting), electric current flows to the second end OUT22 (namely electric current flows to right-hand member from the left end of described heater coil disc LH2) of described heater coil disc LH2 from the first end OUT21 of described heater coil disc LH2, (namely number in the figure is that end of 2 to the right-hand member voltage of described resonant capacitance C21, also be the collector voltage of described IGBT pipe Q2) be pulled to ground, now the right-hand member voltage of described resonant capacitance C21 is about 0V.The collector voltage of described IGBT pipe enters to the input of active differentiator unit 20511 after the dividing potential drop of resistance R27, resistance R28, resistance R29, resistance R30 by the left end of the first electric capacity C25.In the present embodiment, the described first electric capacity C25 in described active differentiator unit 20511 is differential capacitance, the second resistance R32 is feedback resistance, the second electric capacity C26 is feedback capacity.Described 3rd resistance R33 and the 4th resistance R34 forms bleeder circuit.In the present embodiment, described second resistance R32 is the effect playing the differential signal amplifying input, and feedback capacity C26 is the effect playing stable output signal.According to formula f=1/2 π RC (in the present embodiment, f is an input resonance signal of 20Khz-30Khz), suitable differential capacitance C25 and the first resistance R31 can be chosen by formulae discovery.Because the described active differentiator unit 20511 in the present embodiment employs single power supply mode, and bias treatment has been carried out to the comparison terminal voltage of described first voltage comparator A21-U4, calculate the output voltage Vout of active differentiator unit 20511 according to output signal formula Vout=-R31C25 (dui/dt)+(V+) of single supply active differentiator, " V+ " wherein in formula is the quiescent voltage of the in-phase input end of described first voltage comparator A21-U4.Because the described active differentiator unit 20511 in the present embodiment employs single power supply mode, and carried out bias treatment to the comparison terminal voltage of described first voltage comparator A21-U4, now Vout approximates VCC1*R34/ (R33+R34) V.In the present embodiment, Vout inputs to the in-phase input end of described second voltage comparator A21-U1, this Vout signal that the in-phase input end of described second voltage comparator A21-U1 inputs and the reference voltage that its inverting input inputs compare (namely the voltage of described 5th resistance R35 and described 6th resistance R36 to described first operating voltage input VCC1 carries out the voltage Vref after dividing potential drop, voltage Vref=VCC1*R36/ (R35+R36) V).The present embodiment is by configuring suitable the 3rd resistance R33, the 4th resistance R34 and the 5th resistance R35, the 6th resistance R36, make VCC1*R34/ (R33+R34) V equal VCC1*R36/ (R35+R36) V, described in namely during static state, the voltage of the in-phase input end of the second voltage comparator A21-U1 is equal with the voltage of its inverting input.When the voltage of the in-phase input end of described second voltage comparator A21-U1 is greater than the voltage of its inverting input (during Vout>VCC1*R36/ (R35+R36) V), the output of described second voltage comparator A21-U1 exports high level, on the contrary then output low level;

(2) output of described second voltage comparator A21-U1 is connected with the first input end IN1 of door A21-U2 with described, when described IGBT pipe Q2 is in conducting state, the output output low level of the described PWM generation module A21-U3 in the present embodiment is (namely when the output output low level of described PWM generation module A21-U3, also namely when in figure, signal PWM21 is low level, described IGBT pipe Q2 just conducting), and when the output output low level of described PWM generation module A21-U3, described is also low level with the output of door A21-U2, thus the false triggering signal of the output of described second voltage comparator A21-U1 can be shielded, to improve stability and the reliability of the present embodiment,

(3) when described IGBT pipe Q2 is in off state (when the output of corresponding described PWM generation module A21-U3 exports high level), due to the inductive effect of described heater coil disc LH2, electric current can not suddenly change, electric current maintains and flows to right-hand member (namely electric current continues to flow to from the first end OUT21 of described heater coil disc LH2 the second end OUT22 of described heater coil disc LH2) from left end, and charge to described resonant capacitance C21, the right-hand member voltage of described resonant capacitance C21 (being also the collector voltage of described IGBT pipe Q2) is constantly raised in sine relation, until the electric current release of described heater coil disc LH2 is complete.When the electric current of described heater coil disc LH2 is 0, the right-hand member voltage of described resonant capacitance C21 reaches peak.The collector voltage of described IGBT pipe Q2 inputs to the input of described active differentiator unit 20511 after resistance R27, resistance R28, resistance R29 and resistance R30 dividing potential drop by the left end of differential capacitance C25.Because the described active differentiator unit 20511 in the present embodiment employs single power supply mode, and bias treatment has been carried out to the comparison terminal voltage of described first voltage comparator A21-U4, calculate the output voltage Vout of active differentiator unit 20511 according to output signal formula Vout=-R31C25 (dui/dt)+(V+) of single supply active differentiator, " V+ " wherein in formula is the quiescent voltage of the in-phase input end of described first voltage comparator A21-U4." V+ " wherein in formula is the quiescent voltage of the in-phase input end of described first voltage comparator A21-U4.Known, before the collector voltage of described IGBT pipe Q2 rises to peak voltage, (dui/dt) >0 in formula Vout=-R31C25 (dui/dt)+(V+), thus make Vout<V+, thus make the output output low level of the second voltage comparator A21-U1 of described MCU205 inside, now the output of described PWM output modules A 21-U3 exports high level (namely in figure, signal PWM21 is high level), the described output output low level with door A21-U2, when the collector voltage of described IGBT pipe Q2 peaks voltage, i.e. (dui/dt)=0, thus Vout=V+.

(4) when the collector voltage of described IGBT pipe Q2 peaks voltage (during as Vout=V+), described resonant capacitance C21 discharges to described heater coil disc LH2, electric current flows to the left end (i.e. the first end OUT21 of described heater coil disc LH2) of described heater coil disc LH2 from the right-hand member (i.e. the second end OUT22 of described heater coil disc LH2) of described heater coil disc LH2, until the electric energy release of described resonant capacitance C21 is complete (when the electric energy release of described resonant capacitance C21 is complete, now the left end voltage of described resonant capacitance C21 equals its right-hand member voltage).In like manner, due to the inductive effect of described heater coil disc LH2, when the electric energy release of resonant capacitance C21 is complete, described heater coil disc LH2 still also have electric current flow from right to left side, now the left end voltage of described resonant capacitance C21 is clamped at line voltage, the right-hand member voltage of described resonant capacitance C21 is constantly dragged down, until the electric current that described heater coil disc LH2 flows to left end from right-hand member reduces to 0.In above process, the collector voltage of described IGBT pipe Q2 is that sine relation declines.Because the described active differentiator unit 20511 in the present embodiment employs single power supply mode, and bias treatment has been carried out to the comparison terminal voltage of described first voltage comparator A21-U4, the output voltage Vout of active differentiator unit 20511 is calculated according to output signal formula Vout=-R31C25 (dui/dt)+(V+) of single supply active differentiator, " V+ " wherein in formula is the quiescent voltage of the in-phase input end of described first voltage comparator A21-U4, V+ approximates VCC1*R34/ (R33+R34) V, thus Vout>V+, when the collector voltage of described IGBT pipe Q2 declines from crest voltage (i.e. peak voltage), Vout becomes from V+ and is greater than V+ voltage, thus make the output end signal of the second voltage comparator A21-U1 of described MCU205 inside from low transition to high level, now described is all high level with two inputs (i.e. the output of the PWM pin of described MCU205 and the second voltage comparator A21-U1 of described MCU205 inside) of door A21-U2, and then make the described output end signal with door A21-U2 also from low transition to high level, namely an edging trigger is produced described with the output of door A21-U2, now described MCU205 can read the collector voltage of described IGBT pipe Q2, and this voltage that now described MCU205 reads is exactly the crest voltage (i.e. peak voltage) of the collector voltage of described IGBT pipe Q2.In addition, it should be noted that, in the present embodiment, when the crest voltage of the collector voltage described IGBT pipe Q2 being detected is greater than default collector voltage value (as during higher than 1200V), at next turn-on cycle of described IGBT pipe Q2, reduce the service time of described IGBT pipe Q2, to reduce the peak-inverse voltage of the collector voltage of next turn-on cycle of described IGBT pipe Q2, described IGBT pipe Q2 is worked more reliable;

(5) when the collector voltage of described IGBT pipe Q2 constantly decline slowly become 0V time, because the described active differentiator unit 20511 in the present embodiment employs single power supply mode, and bias treatment has been carried out to the comparison terminal voltage of described first voltage comparator A21-U4, the output voltage Vout of active differentiator unit 20511 is calculated according to output signal formula Vout=-R31C25 (dui/dt)+(V+) of single supply active differentiator, " V+ " wherein in formula is the quiescent voltage of the in-phase input end of described first voltage comparator A21-U4, V+ approximates VCC1*R34/ (R33+R34) V, Vout=V+, the output output low level of the voltage comparator A11-U1 of described MCU205 inside, making described is low level with the output end signal of door A21-U2 from high level saltus step, when the described output end signal with door A21-U2 is that the described PWM generation module A21-U3 triggering described MCU205 inside low level process produces the PWM conducting pulsewidth (low level) that makes described IGBT pipe Q2 conducting from high level saltus step, described IGBT pipe Q2 is made to be in conducting state.Next harmonic period, repeats above-mentioned (one) process to (five).

In sum, the electromagnetic heating control system of this SOC (system on a chip) that the present embodiment provides is when the collector voltage of the described IGBT pipe Q2 that described IGBT voltage extremity testing circuit 2051 detects in described resonant circuit 204 is minimum point voltage, the described PWM generation module A21-U3 triggering described MCU205 inside produces the PWM conducting pulsewidth that makes described IGBT pipe Q2 conducting, thus make the electromagnetic heating control system of the present embodiment SOC (system on a chip) relative to electromagnetic heating control system of the prior art shown in Fig. 1, greatly can reduce the power loss of circuit; Further, the electromagnetic heating control system of the present embodiment SOC (system on a chip) also has the high advantage of reliability.

The electromagnetic heating control system of the SOC (system on a chip) that the present embodiment provides, for controlling the resonance heating work of electromagnetic heater, the electromagnetic heating control system of described SOC (system on a chip) comprises mains input, resonant circuit, IGBT drive circuit, MCU, switching power circuit, the first current rectifying and wave filtering circuit, the second current rectifying and wave filtering circuit; Described resonant circuit comprises the IGBT pipe of the heated condition for controlling described resonant circuit; The inside of described MCU is provided with IGBT voltage extremity testing circuit that the voltage extremity for the collector electrode to described IGBT pipe detects and produces circuit to described IGBT drive circuit with the PWM controlling the switch motion of described IGBT pipe for exporting corresponding pwm signal according to the testing result of described IGBT voltage extremity testing circuit; The input of described first current rectifying and wave filtering circuit and the input of described second current rectifying and wave filtering circuit are all connected with described mains input, the output of described first current rectifying and wave filtering circuit is connected with the power input of described resonant circuit, and the output of described second current rectifying and wave filtering circuit is connected with the input of described switching power circuit; The output of described switching power circuit is connected with the power end of described MCU and the power end of described IGBT drive circuit respectively; The output that input and the described PWM of described IGBT drive circuit produce circuit is connected, and the output of described IGBT drive circuit is connected with the drived control input of described resonant circuit; The detection input of IGBT voltage extremity testing circuit is connected with the collector electrode of described IGBT pipe, and the input that detection output and the described PWM of GBT voltage extremity testing circuit produce circuit is connected.The electromagnetic heating control system of this SOC (system on a chip) that the present embodiment provides has the advantage that power loss is low and reliability is high; Meanwhile, the electromagnetic heating control system of the present embodiment SOC (system on a chip) also has circuit structure advantage that is simple and that easily realize.

These are only preferred embodiment of the present utility model; not thereby the scope of the claims of the present utility model is limited; every utilize the utility model specification and accompanying drawing content to do equivalent structure or equivalent flow process conversion; or be directly or indirectly used in other relevant technical fields, be all in like manner included in scope of patent protection of the present utility model.

Claims (10)

1. the electromagnetic heating control system of a SOC (system on a chip), for controlling the resonance heating work of electromagnetic heater, it is characterized in that, the electromagnetic heating control system of described SOC (system on a chip) comprises mains input (201), for carrying out the resonant circuit (204) of resonance heating to described electromagnetic heater, the IGBT drive circuit (207) worked for driving described resonant circuit (204), for controlling the MCU (205) of the heating work of described resonant circuit (204), for the switching power circuit (206) of powering for described MCU (205) and described IGBT drive circuit (207), for carrying out rectifying and wave-filtering to described mains supply and first current rectifying and wave filtering circuit (202) of powering for described resonant circuit (204), for carrying out rectifying and wave-filtering to described mains supply and second current rectifying and wave filtering circuit (203) of powering for described switching power circuit (206), described resonant circuit (204) comprises the IGBT pipe of the heated condition for controlling described resonant circuit (204), the inside of described MCU (205) is provided with IGBT voltage extremity testing circuit (2051) that the voltage extremity for the collector electrode to described IGBT pipe detects and produces circuit (2052) to described IGBT drive circuit (207) with the PWM controlling the switch motion of described IGBT pipe for exporting corresponding pwm signal according to the testing result of described IGBT voltage extremity testing circuit (2051), wherein,

The input of described first current rectifying and wave filtering circuit (202) and the input of described second current rectifying and wave filtering circuit (203) are all connected with described mains input (201), the output of described first current rectifying and wave filtering circuit (202) is connected with the power input of described resonant circuit (204), and the output of described second current rectifying and wave filtering circuit (203) is connected with the input of described switching power circuit (206); The output of described switching power circuit (206) is connected with the power end of described MCU (205) and the power end of described IGBT drive circuit (207) respectively; The output that input and the described PWM of described IGBT drive circuit (207) produce circuit (2052) is connected, and the output of described IGBT drive circuit (207) is connected with the drived control input of described resonant circuit (204); The detection input of described IGBT voltage extremity testing circuit (2051) is connected with the collector electrode of described IGBT pipe, and the input that detection output and the described PWM of described IGBT voltage extremity testing circuit (2051) produce circuit (2052) is connected.

2. the electromagnetic heating control system of SOC (system on a chip) as claimed in claim 1, it is characterized in that, the electromagnetic heating control system of described SOC (system on a chip) also comprises the civil power zero cross detection circuit (208) for detecting the zero crossing of described mains supply, the detection input of described civil power zero cross detection circuit (208) is connected with the output of described second current rectifying and wave filtering circuit (203), the detection output of described civil power zero cross detection circuit (208) is connected with first signal input part of described MCU (205), described MCU (205) is when described civil power zero cross detection circuit (208) detects the zero passage of described mains supply, shield described IGBT voltage extremity testing circuit (2051) detection output function and control described PWM produce circuit (2052) preset time period in export preset duty when predeterminated frequency pwm signal to described IGBT drive circuit (207) to control the switch motion of described IGBT pipe.

3. the electromagnetic heating control system of SOC (system on a chip) as claimed in claim 2, it is characterized in that, the detection input of described IGBT voltage extremity testing circuit (2051) is connected with the collector electrode of the described IGBT pipe in described resonant circuit (204), the input that detection output and the described PWM of described IGBT voltage extremity testing circuit (2051) produce circuit (2052) is connected, described IGBT voltage extremity testing circuit (2051) is when the voltage of the collector electrode described IGBT pipe being detected is minimum point voltage, control described PWM and produce the conducting pulsewidth that circuit (2052) output one makes the conducting of described IGBT pipe.

4. the electromagnetic heating control system of the SOC (system on a chip) as described in claim 1,2 or 3, it is characterized in that, described IGBT voltage extremity testing circuit (2051) comprises bleeder circuit unit (R27, R28, R29, R30, C24, D22) and active differentiator unit (20511); Wherein,

The input of described bleeder circuit unit is connected with the collector electrode of described IGBT pipe, and the output of described bleeder circuit unit is connected with the input of described active differentiator unit (20511); The input that output and the described PWM of described active differentiator unit (20511) produce circuit (2052) is connected.

5. the electromagnetic heating control system of SOC (system on a chip) as claimed in claim 4, it is characterized in that, described active differentiator unit (20511) comprises inner the first voltage comparator (A21-U4) of the first operating voltage input (VCC1), the first resistance (R31), the second resistance (R32), the 3rd resistance (R33), the 4th resistance (R34), the first electric capacity (C25), the second electric capacity (C26) and described MCU (205); Wherein,

The first end of described first electric capacity (C25) is connected with the output of described bleeder circuit unit, and the second end of described first electric capacity (C25) is connected through the first end of the first resistance (R31) with the second resistance (R32); Second end of described second resistance (R32) is connected with the output of described first voltage comparator (A21-U4); The input that the output of described first voltage comparator (A21-U4) also produces circuit with described PWM is connected; Described second electric capacity (C26) is in parallel with described second resistance (R32); The first end of described second resistance (R32) is also connected with the inverting input of described first voltage comparator (A21-U4); The in-phase input end of described first voltage comparator (A21-U4) is connected with the first end of described 3rd resistance (R33) and the first end of described 4th resistance (R34) respectively; Second end of described 3rd resistance (R33) is connected with described first operating voltage input (VCC1); Second end ground connection of described 4th resistance (R34).

6. the electromagnetic heating control system of SOC (system on a chip) as claimed in claim 5, it is characterized in that, described PWM produce circuit (2052) comprise inner the second voltage comparator (A21-U1) of the 5th resistance (R35), the 6th resistance (R36), described MCU (205), described MCU (205) inner with door (A21-U2) and the inner PWM generation module (A21-U3) of described MCU (205); Wherein,

The in-phase input end of described second voltage comparator (A21-U1) is connected with the output of described first voltage comparator (A21-U4), and the inverting input of described second voltage comparator (A21-U1) is connected with the first end of described 5th resistance (R35) and the first end of described 6th resistance (R36) respectively; Second end of described 5th resistance (R35) is connected with described first operating voltage input (VCC1); Second end ground connection of described 6th resistance (R36); The output of described second voltage comparator (A21-U1) is connected with the first input end (IN1) of door (A21-U2) with described; Describedly to be connected with the output of described PWM generation module (A21-U3) with the first input end (IN2) of door (A21-U2); Describedly to be connected with the input of described PWM generation module (A21-U3) with the output of door (A21-U2); The output of described PWM generation module (A21-U3) is also connected with the input of described IGBT drive circuit (207).

7. the electromagnetic heating control system of SOC (system on a chip) as claimed in claim 1, it is characterized in that, the electromagnetic heating control system of described SOC (system on a chip) also comprises the line voltage testing circuit (209) for detecting the voltage of described mains supply; The detection input of described line voltage testing circuit (209) is connected with the output of described second current rectifying and wave filtering circuit (203), and the detection output of described line voltage testing circuit (209) is connected with the secondary signal input of described MCU (205).

8. the electromagnetic heating control system of SOC (system on a chip) as claimed in claim 7, it is characterized in that, the electromagnetic heating control system of described SOC (system on a chip) also comprises IGBT current detection circuit (210) for detecting the electric current of described IGBT pipe and the IGBT over-voltage detection circuit (211) for the collector voltage whether overvoltage that detects described IGBT pipe; The detection input of described IGBT current detection circuit (210) is connected with the current output terminal of described IGBT pipe, and the detection output of described IGBT current detection circuit (210) is connected with the 3rd signal input part of described MCU (205); The detection input of described IGBT over-voltage detection circuit (211) is connected with the collector electrode of described IGBT pipe, and the detection output of described IGBT over-voltage detection circuit (210) is connected with the 4th signal input part of described MCU (205).

9. the electromagnetic heating control system of SOC (system on a chip) as claimed in claim 8, it is characterized in that, the electromagnetic heating control system of described SOC (system on a chip) also comprises the keypad communication interface circuit (215) of the set value of the power for inputting described electromagnetic heater and the civil power surge testing circuit (216) for detecting the surge of described mains supply; The power end of described keypad communication interface circuit (215) is connected with described switching power circuit (206), and the output of described keypad communication interface circuit (215) is connected with the 5th signal input part of described MCU (205); The detection input of described civil power surge testing circuit (216) is connected with the output of described second current rectifying and wave filtering circuit (203), and the detection output of described civil power surge testing circuit (216) is connected with the 6th signal input part of described MCU (205).

10. the electromagnetic heating control system of SOC (system on a chip) as claimed in claim 9, it is characterized in that, the electromagnetic heating control system of described SOC (system on a chip) is also included in the line voltage that described line voltage testing circuit (209) detects and is greater than default line voltage value, the electric current that described IGBT current detection circuit (210) is detected is greater than default current value, the collector voltage of the described IGBT pipe that described IGBT over-voltage detection circuit (211) is detected is greater than the civil power surge that default collector voltage value or described civil power surge testing circuit (216) detect and is greater than default surge value, for sending the warning device (217) of alarm sound, the power end of described warning device (217) is connected with described switching power circuit (206), and the control input end of described warning device (217) is connected with described MCU (205).