CN108463872B - 离子植入机、半导体晶片的植入设备及方法 - Google Patents

离子植入机、半导体晶片的植入设备及方法 Download PDF

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CN108463872B
CN108463872B CN201780006590.0A CN201780006590A CN108463872B CN 108463872 B CN108463872 B CN 108463872B CN 201780006590 A CN201780006590 A CN 201780006590A CN 108463872 B CN108463872 B CN 108463872B
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plasma gun
high bulk
current
bulk resistivity
wafer
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CN108463872A (zh
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麦可·W·奥斯邦
大卫·E·苏若恩
朱利安·G·布雷克
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Varian Semiconductor Equipment Associates Inc
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Varian Semiconductor Equipment Associates Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0471—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007—Holding mechanisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30405—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31703—Dosimetry

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN201780006590.0A 2016-01-14 2017-01-04 离子植入机、半导体晶片的植入设备及方法 Active CN108463872B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662278950P 2016-01-14 2016-01-14
US62/278,950 2016-01-14
US15/131,520 2016-04-18
US15/131,520 US9824857B2 (en) 2016-01-14 2016-04-18 Method for implantation of semiconductor wafers having high bulk resistivity
PCT/US2017/012112 WO2017123438A1 (en) 2016-01-14 2017-01-04 Method for implantation of semiconductor wafers having high bulk resistivity

Publications (2)

Publication Number Publication Date
CN108463872A CN108463872A (zh) 2018-08-28
CN108463872B true CN108463872B (zh) 2022-10-14

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Country Link
US (1) US9824857B2 (https=)
JP (1) JP6814218B2 (https=)
KR (1) KR102483421B1 (https=)
CN (1) CN108463872B (https=)
TW (1) TWI722085B (https=)
WO (1) WO2017123438A1 (https=)

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EP3843123A1 (fr) 2017-12-20 2021-06-30 The Swatch Group Research and Development Ltd Installation pour la mise en oeuvre d'un procédé d'implantation d'ions sur une surface d'un objet à traiter
CN111987030A (zh) * 2019-05-22 2020-11-24 芯恩（青岛）集成电路有限公司 半导体设备及提高静电吸盘吸附晶圆能力的方法
US11875967B2 (en) * 2020-05-21 2024-01-16 Applied Materials, Inc. System apparatus and method for enhancing electrical clamping of substrates using photo-illumination
CN115516599B (zh) * 2020-05-21 2025-06-20 应用材料股份有限公司 用于处理衬底的方法
US20210366757A1 (en) * 2020-05-21 2021-11-25 Applied Materials, Inc. System apparatus and method for enhancing electrical clamping of substrates using photo-illumination
US11315819B2 (en) 2020-05-21 2022-04-26 Applied Materials, Inc. System apparatus and method for enhancing electrical clamping of substrates using photo-illumination
US11538714B2 (en) * 2020-05-21 2022-12-27 Applied Materials, Inc. System apparatus and method for enhancing electrical clamping of substrates using photo-illumination

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JP2005072521A (ja) * 2003-08-28 2005-03-17 Hitachi Ltd プラズマ処理装置
CN101523357A (zh) * 2006-10-04 2009-09-02 应用材料股份有限公司 等离子腔室中用于基板夹持的设备与方法
JP2013206833A (ja) * 2012-03-29 2013-10-07 Sen Corp イオン注入装置及びその制御方法
CN103890897A (zh) * 2011-07-28 2014-06-25 先进能源工业公司 用于先进等离子体能量处理系统的离子能量控制系统
CN104347358A (zh) * 2014-09-15 2015-02-11 上海华力微电子有限公司 改善器件等离子体损伤的方法
CN104994676A (zh) * 2011-03-30 2015-10-21 东京毅力科创株式会社 等离子体处理装置

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GB9710380D0 (en) 1997-05-20 1997-07-16 Applied Materials Inc Electron flood apparatus for neutralising charge build-up on a substrate during ion implantation
US6489225B1 (en) * 1999-06-11 2002-12-03 Electron Vision Corporation Method for controlling dopant profiles and dopant activation by electron beam processing
KR100416661B1 (ko) * 2001-02-20 2004-01-31 동부전자 주식회사 반도체 이온 주입 장비에서의 이온 빔 중성화 시스템
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CN104994676A (zh) * 2011-03-30 2015-10-21 东京毅力科创株式会社 等离子体处理装置
CN103890897A (zh) * 2011-07-28 2014-06-25 先进能源工业公司 用于先进等离子体能量处理系统的离子能量控制系统
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Also Published As

Publication number Publication date
KR102483421B1 (ko) 2022-12-30
WO2017123438A1 (en) 2017-07-20
JP6814218B2 (ja) 2021-01-13
CN108463872A (zh) 2018-08-28
KR20180095711A (ko) 2018-08-27
JP2019508840A (ja) 2019-03-28
US20170207063A1 (en) 2017-07-20
TWI722085B (zh) 2021-03-21
TW201732862A (zh) 2017-09-16
US9824857B2 (en) 2017-11-21

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