KR102483421B1 - 반도체 웨이퍼들의 주입을 위한 주입기, 장치, 및 그 방법 - Google Patents

반도체 웨이퍼들의 주입을 위한 주입기, 장치, 및 그 방법 Download PDF

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KR102483421B1
KR102483421B1 KR1020187022750A KR20187022750A KR102483421B1 KR 102483421 B1 KR102483421 B1 KR 102483421B1 KR 1020187022750 A KR1020187022750 A KR 1020187022750A KR 20187022750 A KR20187022750 A KR 20187022750A KR 102483421 B1 KR102483421 B1 KR 102483421B1
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South Korea
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clamp
flood gun
plasma flood
hbr
clamp current
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KR20180095711A (ko
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마이클 더블유. 오스본
데이비드 이. 수로넨
줄리앙 지. 블레이크
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베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01L21/26586—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H01L21/425—
    • H01L21/67213—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0471—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007—Holding mechanisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30405—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31703—Dosimetry

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020187022750A 2016-01-14 2017-01-04 반도체 웨이퍼들의 주입을 위한 주입기, 장치, 및 그 방법 Active KR102483421B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662278950P 2016-01-14 2016-01-14
US62/278,950 2016-01-14
US15/131,520 2016-04-18
US15/131,520 US9824857B2 (en) 2016-01-14 2016-04-18 Method for implantation of semiconductor wafers having high bulk resistivity
PCT/US2017/012112 WO2017123438A1 (en) 2016-01-14 2017-01-04 Method for implantation of semiconductor wafers having high bulk resistivity

Publications (2)

Publication Number Publication Date
KR20180095711A KR20180095711A (ko) 2018-08-27
KR102483421B1 true KR102483421B1 (ko) 2022-12-30

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KR1020187022750A Active KR102483421B1 (ko) 2016-01-14 2017-01-04 반도체 웨이퍼들의 주입을 위한 주입기, 장치, 및 그 방법

Country Status (6)

Country Link
US (1) US9824857B2 (https=)
JP (1) JP6814218B2 (https=)
KR (1) KR102483421B1 (https=)
CN (1) CN108463872B (https=)
TW (1) TWI722085B (https=)
WO (1) WO2017123438A1 (https=)

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EP3843123A1 (fr) 2017-12-20 2021-06-30 The Swatch Group Research and Development Ltd Installation pour la mise en oeuvre d'un procédé d'implantation d'ions sur une surface d'un objet à traiter
CN111987030A (zh) * 2019-05-22 2020-11-24 芯恩（青岛）集成电路有限公司 半导体设备及提高静电吸盘吸附晶圆能力的方法
US11875967B2 (en) * 2020-05-21 2024-01-16 Applied Materials, Inc. System apparatus and method for enhancing electrical clamping of substrates using photo-illumination
CN115516599B (zh) * 2020-05-21 2025-06-20 应用材料股份有限公司 用于处理衬底的方法
US20210366757A1 (en) * 2020-05-21 2021-11-25 Applied Materials, Inc. System apparatus and method for enhancing electrical clamping of substrates using photo-illumination
US11315819B2 (en) 2020-05-21 2022-04-26 Applied Materials, Inc. System apparatus and method for enhancing electrical clamping of substrates using photo-illumination
US11538714B2 (en) * 2020-05-21 2022-12-27 Applied Materials, Inc. System apparatus and method for enhancing electrical clamping of substrates using photo-illumination

Citations (3)

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JP2009238632A (ja) 2008-03-27 2009-10-15 Fujitsu Microelectronics Ltd イオン注入装置及び半導体装置の製造方法
JP2014165076A (ja) 2013-02-26 2014-09-08 Toshiba Corp イオン注入装置およびイオン注入装置の状態判定方法
WO2015061578A1 (en) 2013-10-25 2015-04-30 Varian Semiconductor Equipment Associates, Inc. Pinched plasma bridge flood gun for substrate charge neutralization

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JPH0215552A (ja) * 1988-07-01 1990-01-19 Mitsubishi Electric Corp イオン注入装置
JPH09167593A (ja) * 1995-12-14 1997-06-24 Nissin Electric Co Ltd イオン注入装置
JPH1027566A (ja) * 1996-07-10 1998-01-27 Nissin Electric Co Ltd 基板保持装置
GB9710380D0 (en) 1997-05-20 1997-07-16 Applied Materials Inc Electron flood apparatus for neutralising charge build-up on a substrate during ion implantation
US6489225B1 (en) * 1999-06-11 2002-12-03 Electron Vision Corporation Method for controlling dopant profiles and dopant activation by electron beam processing
KR100416661B1 (ko) * 2001-02-20 2004-01-31 동부전자 주식회사 반도체 이온 주입 장비에서의 이온 빔 중성화 시스템
KR20040005402A (ko) * 2002-07-10 2004-01-16 삼성전자주식회사 이온 주입 설비의 플라즈마 플라드 건
JP2005072521A (ja) * 2003-08-28 2005-03-17 Hitachi Ltd プラズマ処理装置
JP3742638B2 (ja) * 2003-09-19 2006-02-08 アプライド マテリアルズ インコーポレイテッド エレクトロンフラッド装置及びイオン注入装置
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JP4468194B2 (ja) * 2005-01-28 2010-05-26 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
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Publication number Priority date Publication date Assignee Title
JP2009238632A (ja) 2008-03-27 2009-10-15 Fujitsu Microelectronics Ltd イオン注入装置及び半導体装置の製造方法
JP2014165076A (ja) 2013-02-26 2014-09-08 Toshiba Corp イオン注入装置およびイオン注入装置の状態判定方法
WO2015061578A1 (en) 2013-10-25 2015-04-30 Varian Semiconductor Equipment Associates, Inc. Pinched plasma bridge flood gun for substrate charge neutralization

Also Published As

Publication number Publication date
WO2017123438A1 (en) 2017-07-20
CN108463872B (zh) 2022-10-14
JP6814218B2 (ja) 2021-01-13
CN108463872A (zh) 2018-08-28
KR20180095711A (ko) 2018-08-27
JP2019508840A (ja) 2019-03-28
US20170207063A1 (en) 2017-07-20
TWI722085B (zh) 2021-03-21
TW201732862A (zh) 2017-09-16
US9824857B2 (en) 2017-11-21

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