CN108441938A - Special-shaped thermal-field device suitable for crystal growth - Google Patents
Special-shaped thermal-field device suitable for crystal growth Download PDFInfo
- Publication number
- CN108441938A CN108441938A CN201810184323.9A CN201810184323A CN108441938A CN 108441938 A CN108441938 A CN 108441938A CN 201810184323 A CN201810184323 A CN 201810184323A CN 108441938 A CN108441938 A CN 108441938A
- Authority
- CN
- China
- Prior art keywords
- special
- crystal growth
- crucible
- field device
- device suitable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
Abstract
The present invention relates to a kind of special-shaped thermal-field devices suitable for crystal growth, including induction coil (1), insulating layer (2), induction heater (3), raw material (4), crucible (5) and crucible pillar (6), the induction heater (3) is arranged at insulating layer (2) inner wall, and the shape of the two is abnormally-structured.Compared with prior art, the present invention has widened the selection of heating material significantly, simplifies heater processing, is conducive to grow high quality crystal.
Description
Technical field
The invention belongs to crystalline material preparing technical field, it is related to that one is to classes such as Bridgman-Stockbarger method, temperature gradient methods
The improved special-shaped thermal-field device suitable for crystal growth of innovation formula is carried out like the thermal field of crystal growth technique.
Background technology
Bridgman-Stockbarger method, temperature gradient method are always arsenide, fluoride, oxide (such as GaAs, CaF2、MgF2、BGO、
BBO、Al2O3) etc. artificial lens main growth methods.It is controllably easily adjusted with temperature gradient, high degree of automation, artificial
The advantages that simple operation, thermal field are reproducible, and thermal field structure is simple, and production efficiency is high is that one kind being very suitable for industrialization, scale
The crystal growth technique of change.But its technique has a disadvantage that：
1, current traditional handicraft is generally resistance heating manner, heating shape be serpentine rings around straight tube shape, birdcage shape
Or metal mesh tubular structure.Needing to destroy insulating layer can make heater be connected with electrode, to temperature gradient shadow
Sound is larger.And since straight barrel type heater temperature gradient does not have gradual change, cause temperature gradient that can occur the feelings of supercooling overheat suddenly
Condition.
2, when heater electrode is connect with power supply copper electrode, overcurrent may be caused to beat due to there is corrosion phenomenon
Fire；Or the volatilization of heater electrode makes itself and the unmatched situation of copper electrode.
3, copper electrode needs a large amount of cooling water guarantee copper electrode and will not melt, and has not only consumed energy but also increased the complexity of equipment
Degree.
Invention content
It is an object of the present invention to overcome the above-mentioned drawbacks of the prior art and provide one kind having widened hair significantly
The selection of hot body material simplifies heater processing, is conducive to the abnormity suitable for crystal growth for growing high quality crystal
Thermal-field device.
The purpose of the present invention can be achieved through the following technical solutions：A kind of special-shaped thermal field suitable for crystal growth fills
It sets, including induction coil, insulating layer, induction heater, raw material, crucible and crucible pillar, which is characterized in that the induction hair
Hot body is arranged at insulating layer inner wall, and the shape of the two is abnormally-structured.
The induction heater and insulating layer flue, back-off bowl-type or without bottom trapezoidal shape.
The crucible is placed in insulating layer, and apart from the induction heater in 7mm -40mm.
The thickness of the insulating layer is in 15mm -40mm.
The induction coil is arranged on the outside of insulating layer, and apart from insulating layer 5-10mm.
The induction coil is 7-12 circle coils, and induction frequencies are 2kHz -15kHz.
The material of the induction heater is tungsten, molybdenum, graphite, iridium or rhenium.
The material of the insulating layer is graphite felt, carbon felt, zirconium oxide, aluminium oxide or quartz.
The crucible has crucible pillar, by crucible pillar adjust crucible and incude heater between away from
From.
According to thermal field material and crystal property Selective filling gas type and pressure.
Can be as needed during long crystalline substance, regulating winding builds temperature gradient with respect to the position of heater.
Can be as needed during long crystalline substance, the relative position of crucible and heater is adjusted, temperature gradient is built.
Long brilliant requirement that in the process can be according to growth characteristics to temperature gradient, 1) select crucible motionless, only adjust work(
Rate；2) power is motionless, the lifting of carry out crucible relative position in heater；3) or method 1) with method 2) intersect it is synchronous
Implementation carries out growth control.Requirement according to crystal to temperature gradient simultaneously, can adjust the number of turns of coil, coil phase in shove charge
To the position of heater.
The innovation of the present invention is：
1, the heater of abnormity is had devised on the basis of traditional sensing heating so that a gradual change is presented in temperature gradient
Process.
2 at the same crucible have elevating function, Bridgman-Stockbarger method and the terraced method perfect adaptation of temperature are got up, technique is easily facilitated
Control and design crystal growth thermal gradient.
Compared with prior art, the invention has the advantages that：
1, it is radial can to make the angle adjustment that heater can be changed in special-shaped (such as tubaeform, back-off bowl-type etc.) for fever shape
Temperature change；Increased bottom of bowl can improve axial-temperature gradient by its thickness；Coil is with respect to the position of heater, coil simultaneously
The heating efficiency of heater is adjusted in the size of internal diameter, adjusts temperature of thermal field gradient.Fever has been widened in the invention significantly
The selection of body material simplifies heater processing, is conducive to grow high quality crystal.
2) long brilliant two means of relative position by power control and crucible up and down inside heater in the process, reach
To the control of crystal growth technique.
Description of the drawings
Fig. 1 is apparatus of the present invention overall structure diagram.
Specific implementation mode
The present invention is described in detail with specific embodiment below in conjunction with the accompanying drawings.
Embodiment 1
As shown in Figure 1, a kind of special-shaped thermal-field device suitable for crystal growth, including induction coil 1, insulating layer 2, induction
Heater 3, raw material 4, crucible 5 and crucible pillar 6, the induction coil 1 are arranged in 2 outside of insulating layer, and apart from insulating layer
25-10mm.The induction heater 3 is arranged at 2 inner wall of insulating layer, and the shape of the two is abnormally-structured.The sense
Answer 2 flue of heater 3 and insulating layer, back-off bowl-type or without bottom trapezoidal shape (in the present embodiment be without go to the bottom it is trapezoidal
Shape).The crucible 5 is placed in insulating layer 2, and apart from the induction heater 3 in 7mm -40mm.Pass through 5 outer wall of crucible
The distribution of radial symmetry gradient is built to the distance of heater inner wall.The upper bottom portion point of induction heater 3 can greatly increase earthenware
The temperature on 5 top of crucible, is conducive to the axial-temperature gradient of structure science, is conducive to growth of large size high quality crystal.
The crucible 5 has crucible pillar 6, by between the adjusting crucible 5 and induction heater 3 of crucible pillar 6
Distance.Long brilliant requirement that in the process can be according to growth characteristics to temperature gradient, 1) select crucible motionless, only adjust work(
Rate；2) power is motionless, the lifting of carry out crucible relative position in heater；3) or method 1) with method 2) intersect it is synchronous
Implementation carries out growth control.Requirement according to crystal to temperature gradient simultaneously, can adjust the number of turns of coil, coil phase in shove charge
To the position of heater.
The thickness of the insulating layer 2 is in 15mm -40mm.The induction coil 1 is 7-12 circle coils, induction frequencies
For 2kHz -15kHz.The material of the induction heater 3 is tungsten, molybdenum, graphite, iridium or rhenium.The material of the insulating layer 2
For graphite felt, carbon felt, zirconium oxide, aluminium oxide or quartz.
What has been described above is only a preferred embodiment of the present invention, but not limited to this.It should be pointed out that for the general of this field
For logical technical staff, without departing from the principle of the present invention, the skill that creative work can be associated is needed not move through
Art feature can also make several variations and modifications, these variations are obviously regarded as equivalent feature, still fall within the guarantor of the present invention
Within the scope of shield.
Claims (9)
1. a kind of special-shaped thermal-field device suitable for crystal growth, including induction coil (1), insulating layer (2), induction heater
(3), raw material (4), crucible (5) and crucible pillar (6), which is characterized in that the induction heater (3) is arranged in insulating layer
(2) at inner wall, and the shape of the two is abnormally-structured.
2. a kind of special-shaped thermal-field device suitable for crystal growth according to claim 1, which is characterized in that the sense
Answer heater (3) and insulating layer (2) flue, back-off bowl-type or without bottom trapezoidal shape.
3. a kind of special-shaped thermal-field device suitable for crystal growth according to claim 1, which is characterized in that the earthenware
Crucible (5) is placed in insulating layer (2), and apart from the induction heater (3) in 7mm -40mm.
4. a kind of special-shaped thermal-field device suitable for crystal growth according to claim 1, which is characterized in that the guarantor
The thickness of warm layer (2) is in 15mm -40mm.
5. a kind of special-shaped thermal-field device suitable for crystal growth according to claim 1, which is characterized in that the sense
Answer coil (1) setting on the outside of insulating layer (2), and apart from insulating layer (2) 5-10mm.
6. a kind of special-shaped thermal-field device suitable for crystal growth according to claim 1, which is characterized in that the sense
It is 7-12 circle coils to answer coil (1), and induction frequencies are 2kHz -15kHz.
7. a kind of special-shaped thermal-field device suitable for crystal growth according to claim 1, which is characterized in that the sense
It is tungsten, molybdenum, graphite, iridium or rhenium to answer the material of heater (3).
8. a kind of special-shaped thermal-field device suitable for crystal growth according to claim 1, which is characterized in that the guarantor
The material of warm layer (2) is graphite felt, carbon felt, zirconium oxide, aluminium oxide or quartz.
9. a kind of special-shaped thermal-field device suitable for crystal growth according to claim 1, which is characterized in that the earthenware
Crucible (5) has crucible pillar (6), passes through the distance between the adjusting crucible (5) of crucible pillar (6) and induction heater (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810184323.9A CN108441938A (en) | 2018-03-06 | 2018-03-06 | Special-shaped thermal-field device suitable for crystal growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810184323.9A CN108441938A (en) | 2018-03-06 | 2018-03-06 | Special-shaped thermal-field device suitable for crystal growth |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108441938A true CN108441938A (en) | 2018-08-24 |
Family
ID=63193346
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810184323.9A Pending CN108441938A (en) | 2018-03-06 | 2018-03-06 | Special-shaped thermal-field device suitable for crystal growth |
Country Status (1)
| Country | Link |
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| CN (1) | CN108441938A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109974373A (en) * | 2019-03-28 | 2019-07-05 | 刘丽春 | It is a kind of that dual convection current frost-free refrigerator is surround according to electrode law |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102628184A (en) * | 2012-05-07 | 2012-08-08 | 江苏浩瀚蓝宝石科技有限公司 | Method for growing gem crystals by way of vacuum induction heating and device realizing method |
| CN103806102A (en) * | 2014-02-14 | 2014-05-21 | 闽能光电集团有限公司 | Thermal field structure for growth of sapphire crystal |
| JP2015083524A (en) * | 2013-10-25 | 2015-04-30 | 株式会社フジクラ | Single crystal growth apparatus |
| CN106480493A (en) * | 2015-08-27 | 2017-03-08 | 中国科学院上海硅酸盐研究所 | A kind of New Heating for crystal growth |
| CN107254714A (en) * | 2017-08-12 | 2017-10-17 | 哈尔滨奥瑞德光电技术有限公司 | The thermal field structure of more than 200kg large-size sapphire single-crystal stoves |
-
2018
- 2018-03-06 CN CN201810184323.9A patent/CN108441938A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102628184A (en) * | 2012-05-07 | 2012-08-08 | 江苏浩瀚蓝宝石科技有限公司 | Method for growing gem crystals by way of vacuum induction heating and device realizing method |
| JP2015083524A (en) * | 2013-10-25 | 2015-04-30 | 株式会社フジクラ | Single crystal growth apparatus |
| CN103806102A (en) * | 2014-02-14 | 2014-05-21 | 闽能光电集团有限公司 | Thermal field structure for growth of sapphire crystal |
| CN106480493A (en) * | 2015-08-27 | 2017-03-08 | 中国科学院上海硅酸盐研究所 | A kind of New Heating for crystal growth |
| CN107254714A (en) * | 2017-08-12 | 2017-10-17 | 哈尔滨奥瑞德光电技术有限公司 | The thermal field structure of more than 200kg large-size sapphire single-crystal stoves |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109974373A (en) * | 2019-03-28 | 2019-07-05 | 刘丽春 | It is a kind of that dual convection current frost-free refrigerator is surround according to electrode law |
| CN109974373B (en) * | 2019-03-28 | 2020-12-04 | 山东沃华远达环境科技股份有限公司 | Surrounding double convection frost-free refrigerator according to electrode law |
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Application publication date: 20180824 |