CN108430156A - Nano metal substrate and manufacturing method for ultra fine-line FPC and COF material - Google Patents
Nano metal substrate and manufacturing method for ultra fine-line FPC and COF material Download PDFInfo
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- CN108430156A CN108430156A CN201710075053.3A CN201710075053A CN108430156A CN 108430156 A CN108430156 A CN 108430156A CN 201710075053 A CN201710075053 A CN 201710075053A CN 108430156 A CN108430156 A CN 108430156A
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- copper foil
- polyimide
- ultrathin nanometer
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 110
- 239000002184 metal Substances 0.000 title claims abstract description 110
- 239000000758 substrate Substances 0.000 title claims abstract description 41
- 239000000463 material Substances 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 97
- 239000004642 Polyimide Substances 0.000 claims abstract description 54
- 229920001721 polyimide Polymers 0.000 claims abstract description 54
- 229910052802 copper Inorganic materials 0.000 claims abstract description 21
- 239000010949 copper Substances 0.000 claims abstract description 21
- 230000003746 surface roughness Effects 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 388
- 239000011889 copper foil Substances 0.000 claims description 75
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 49
- 229910052759 nickel Inorganic materials 0.000 claims description 25
- 229910052709 silver Inorganic materials 0.000 claims description 16
- 239000004332 silver Substances 0.000 claims description 16
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 15
- 229920005989 resin Polymers 0.000 claims description 13
- 239000011347 resin Substances 0.000 claims description 13
- 238000007747 plating Methods 0.000 claims description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 238000007788 roughening Methods 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 238000005275 alloying Methods 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 150000002815 nickel Chemical class 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims 1
- 238000012545 processing Methods 0.000 abstract description 12
- 230000003628 erosive effect Effects 0.000 abstract description 4
- 238000005530 etching Methods 0.000 abstract description 4
- 238000011161 development Methods 0.000 abstract description 3
- 230000037427 ion transport Effects 0.000 abstract description 3
- 239000003153 chemical reaction reagent Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 6
- 239000000654 additive Substances 0.000 description 3
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 238000011143 downstream manufacturing Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 150000005690 diesters Chemical class 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 150000003071 polychlorinated biphenyls Chemical class 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
- H05K1/056—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an organic insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/142—Metallic substrates having insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
- H01L23/4924—Bases or plates or solder therefor characterised by the materials
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/381—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0154—Polyimide
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/05—Flexible printed circuits [FPCs]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
Abstract
The invention discloses a kind of nano metal substrates for ultra fine-line FPC and COF material; including polyimide layer, it is formed in the ultrathin nanometer metal layer and protection film layer of the polyimide layer at least one side, the ultrathin nanometer metal layer is between the polyimide layer and the protection film layer；The thickness of the polyimide layer is 5 50um；The thickness of the ultrathin nanometer metal layer is 0.09 0.8um；The thickness of the protection film layer is 6 60um；The polyimide layer is polyimide layer of the surface roughness between 80 800nm；The ultrathin nanometer metal layer is sputtered layer or electroplated layer.The present invention has splendid resistance to ion transport, dimensional stability, resistance to chemical reagents, heat resisting and adhesion；It is processed suitable for laser, is suitable for processing blind hole by laser/micropore, and be not likely to produce pin hole, be suitble to fine rule road etching, be not easy lateral erosion；The present invention is designed using Nanometer Copper, meets the needs of substrate graph thinning development.
Description
Technical field
The invention belongs to electric substrate technical fields, more particularly to a kind of receiving for ultra fine-line FPC and COF material
Rice metal substrate.
Background technology
FPC (Flexible Printed Circuit), i.e. flexible printed circuit board, are commonly called as " soft board ", have it is light, thin,
The advantages that short, small, is widely adopted in the small-sized electronic products such as mobile phone, digital camera, digital camera, and COF (Chip
On Film, chip on film encapsulation) technology is to make encapsulation chip carrier by chip and flexible PCB electricity with flexible PCB
The technology that road combines.As electronic product tends to microminaturization development, FPC or COF flexible PCBs are functionally required to more
Powerful and trend high frequency, the developing direction of high density and graph thinning.
Flexibility coat copper plate is the baseplate material of FPC or COF processing, and the high density of flexibility coat copper plate, the performance of graph thinning
It is largely dependent on the processing technology of thin copper foil part.
Substrate manufacturer mainly uses two class methods to the processing of thin copper foil part at present：When sputtering method/copper-plating method, second is that
Carrier copper foil method.
Sputtering method/copper-plating method, using PI (polyimides) films as base material, alloy of the sputter containing chromium is as intermediary on PI films
Layer, then sputter copper metal are seed layer, and then electro-coppering makes layers of copper thicken.But general PI film surfaces roughness is in 10-20nm,
Adhesion is bad, needs to be surface-treated PI films with plasma-based or short wavelength ultraviolet, but treated PI films are to follow-up
Heat treatment requirements are high, otherwise adhesion deterioration stripping；In addition, the surface due to PI films has certain roughness, in very thin copper
Surface easy tos produce pin hole when foil is electroplated；And thin copper foil made of this method often results in etching in COF or FPC etch process
Not exclusively, circuit root residual minim obtains the problem of chromium metal can cause Ion transfer, and influences fine rule road COF or FPC
Quality.
And carrier copper foil method, it may be difficult stripping although carrier layer protects copper foil not injured, pressure wound, when removing, make
Stress-retained at processing difficulties, and when removing be easy to cause copper foil deformation and the variation of size harmomegathus, in addition, extra thin copper foil price
It is expensive and be difficult to obtain, in addition extra thin copper foil processing is not easy, so existing copper thickness is difficult to be less than 6 μm or less.
Invention content
The invention mainly solves the technical problem of providing a kind of nano metals for ultra fine-line FPC and COF material
Substrate has splendid resistance to ion transport, dimensional stability, resistance to chemical reagents, heat resisting and adhesion；Suitable for thunder
Processing is penetrated, is suitable for processing blind hole by laser/micropore, and be not likely to produce pin hole, is suitble to fine rule road etching, is not easy lateral erosion；The present invention
It is designed using Nanometer Copper, meets the needs of substrate graph thinning development.
In order to solve the above technical problems, one aspect of the present invention is：It provides a kind of for ultra fine-line FPC
And the nano metal substrate of COF materials, including polyimide layer, the ultrathin nanometer for being formed in the polyimide layer at least one side
Metal layer and protection film layer, the ultrathin nanometer metal layer is between the polyimide layer and the protection film layer；
The thickness of the polyimide layer is 5-50um；
The thickness of the ultrathin nanometer metal layer is 0.09-0.8um；
The thickness of the protection film layer is 6-60um；
The polyimide layer is polyimide layer of the surface roughness between 80-800nm；
The ultrathin nanometer metal layer is sputtered layer or electroplated layer.
It further says, the nano metal substrate is by polyimide layer, is formed in the polyimide layer any surface
Ultrathin nanometer metal layer and the single side nano metal substrate that is constituted of protection film layer.
Further say, the nano metal substrate be by polyimide layer, to be formed in the polyimide layer two-sided
The double-face nanometer metal substrate that ultrathin nanometer metal layer and protection film layer are constituted.
It further says, the thickness of the polyimide layer is 25-50um, and the thickness of the ultrathin nanometer metal layer is
The thickness of 0.09-0.2um, the protection film layer are 28-60um.
It further says, the ultrathin nanometer metal layer is the multilayer that copper foil layer or copper foil layer are constituted with another metal layer
Alloying metal layer, another metal layer refer to silver layer, nickel layer, layers of chrome, palladium layers, aluminium layer, titanium layer, layers of copper, molybdenum layer, indium layer, platinum
At least one of layer and layer gold, wherein the thickness of the copper foil layer is 0.09-0.2um, and the thickness of another metal layer is
0.005-0.015um。
It further says, the ultrathin nanometer metal layer is one kind in following six kinds of structures：
One, one layer of structure：It is made of single layer copper foil layer, the thickness of the copper foil layer is 0.1-0.2um；
Two, two stacking structure：It is made of copper foil layer and the nickel layer for being formed in copper foil layer any surface, the thickness of the copper foil layer
Thickness for 0.09-0.15um, the nickel layer is 0.005-0.015um；
Three, two stacking structure：It is made of copper foil layer and the silver layer for being formed in copper foil layer any surface, the thickness of the copper foil layer
Thickness for 0.09-0.15um, the silver layer is 0.005-0.015um；
Four, three stacking structure：By copper foil layer and it is formed in the laminated nickel layer of copper foil and is formed in copper foil layer another side
Silver layer is constituted, and the thickness of the copper foil layer is 0.09-0.15um, and the thickness of the nickel layer and the silver layer is respectively 0.005-
0.015um；
Five, three stacking structure：It is made of copper foil layer and the nickel layer for being respectively formed in copper foil layer two sides, the thickness of the copper foil layer
It is 0.09-0.15um to spend, and the thickness of nickel layer described in two sides is respectively 0.005-0.015um；
Six, three stacking structure：By copper foil layer and it is formed in the laminated layers of copper of copper foil and is formed in copper foil layer another side
Nickel layer is constituted, and the thickness of the copper foil layer is 0.09-0.15um, and the thickness of the layers of copper and the nickel layer is respectively 0.005-
0.015um。
It further says, the adhesion ＞ 0.8kgf/cm of the polyimide layer and the ultrathin nanometer metal layer.
It further says, the protection film layer is carrier layer, and the carrier layer is by pet layer (poly terephthalic acid second
Diester) and be formed in the low adhesion layer on a surface of the pet layer and constitute, the carrier layer passes through the low adhesion layer
It is covered on the ultrathin nanometer layer on surface of metal, wherein the thickness of the pet layer is 23-50um, the thickness of the low adhesion layer
Off-type force for 5-10um, the low adhesion layer is 1-5g.
It further says, the protection film layer is photopolymer layer, and the photopolymer layer includes photosensitive resin layer and light-transmissive film layer, institute
The one side for stating photosensitive resin layer covers the light-transmissive film layer and another side is covered on the ultrathin nanometer layer on surface of metal.
A kind of manufacturing method of the nano metal substrate for ultra fine-line FPC and COF material：First provide once
Polyimide layer after surface roughening treatment, with sputter or plating mode in the one side of polyimide layer or two-sided sputter or plating
Ultrathin nanometer metal layer then sticks protection film layer to get finished product on the surface of ultrathin nanometer metal layer.
Beneficial effects of the present invention at least have the following：
One, the PI films due to the polyimide layer of the present invention using surface roughness between 80-800nm, should
PI films are a kind of PI resins by roughening treatment, can increase the adhesion with metal alloy, and its surface roughening treatment
Surface corona or plasma-based processing are also passed through, surface energy can be promoted, increased between polyimide layer and ultrathin nanometer metal layer
Adhesion；
Two, ultrathin nanometer metal layer of the present invention includes the multilayer alloying metal layer that copper foil layer is constituted with another metal layer, is closed
Layer gold be designed with conducive to improve nano metal substrate resistance to ion transport, improve FPC or COF materials graph thinning quality and
Insulation performance；
Three, carrier layer can be selected in protection film layer of the invention or photopolymer layer, carrier film or dry film are suitable for half addition
Method technique, the slim highdensity graph thinning line requirements of the more applicable FPC or COF materials of technology of semi-additive process；And carrier film
Not injured, pressure wound and the oxidation before half addition processing procedure of FPC or COF of ultrathin nanometer metal layer can be protected with dry film；
When protection film layer selects carrier layer, carrier layer is made of pet layer and low adhesion layer, and carrier layer passes through low
Adhesion layer is covered on ultrathin nanometer layer on surface of metal, and for the temperature tolerance of PET in 180-220, DEG C heat resisting is good；Low adhesion layer
Off-type force be only 1-5g, therefore carrier layer is easy to be stripped, and does not easily cause the viscous glutinous copper particle of nano metal substrate after stripping
In in carrier film, when stripping, residual stress is small will not cause ultrathin nanometer metal layer to deform, and not influence the dimensional stability of substrate,
Be conducive to use and the promotion yield of Downstream processing；
When protection film layer selects photopolymer layer, photopolymer layer includes photosensitive resin layer and light-transmissive film layer, and the one of photosensitive resin layer
Face covers light-transmissive film layer and another side and is covered on ultrathin nanometer layer on surface of metal, by ultraviolet irradiation, in photosensitive resin layer
Part resin crosslinks curing reaction, forms a kind of substance of stabilization and is attached in plate face, then develop, demoulding is to get required
Circuit, thus it is high using dry film imaging reliability, it is possible to reduce and Downstream processing process is allowed to be directly used in the erosion of exposure imaging circuit
It carves, is advantageously implemented mechanization and automation；
Four, when low adhesion layer selects high temperature resistant silicon glue adhesion layer or acrylic acid adhesion layer, adherence is splendid, and high temperature is high
It is wet it is lower will not delamination/detach with the interface of ultrathin nanometer metal layer；
Five, nano metal substrate of the invention will not crimp, and dimensional stability is excellent, be suitble to laser processing, be applicable in
In micropore/blind hole and the requirement of any hole shape；And multiple sputter or multi-layer plating alloy are used, plating level copper is uniform, is not easy to produce
Raw pin hole is suitble to fine rule road etching, is not easy lateral erosion；
Six, the thickness of ultrathin nanometer metal layer of the invention is 0.1-0.2um, and line width/line-spacing can be to 15/15um, even
The design of 10/10um or lower line requirements, Nanometer Copper meets the graph thinning requirement of FPC or COF substrates.
Description of the drawings
Fig. 1 is the structural schematic diagram of the embodiment of the present invention (by taking double-face nanometer metal substrate as an example)；
Fig. 2 is the structural schematic diagram of carrier layer of the present invention；
Fig. 3 is the structural schematic diagram of photopolymer layer of the present invention；
Fig. 4 is the first schematic diagram in six kinds of structures of ultrathin nanometer metal layer of the present invention；
Fig. 5 is second of schematic diagram in six kinds of structures of ultrathin nanometer metal layer of the present invention；
Fig. 6 is the third schematic diagram in six kinds of structures of ultrathin nanometer metal layer of the present invention；
Fig. 7 is the 4th kind of schematic diagram in six kinds of structures of ultrathin nanometer metal layer of the present invention；
Fig. 8 is the 5th kind of schematic diagram in six kinds of structures of ultrathin nanometer metal layer of the present invention；
Fig. 9 is the 6th kind of schematic diagram in six kinds of structures of ultrathin nanometer metal layer of the present invention；
The label of each component is as follows in attached drawing：
100- polyimide layers；
200- ultrathin nanometer metal layers；
201- copper foil layers, 202- nickel layers, 203- silver layers, 204- layers of copper；
300- protection film layers；
301-PET layers, the low adhesion layers of 302-, 303- photosensitive resin layers and 304- light-transmissive film layers.
Specific implementation mode
The preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings, so that advantages and features of the invention energy
It is easier to be readily appreciated by one skilled in the art, so as to make a clearer definition of the protection scope of the present invention.
Embodiment：A kind of nano metal substrate for ultra fine-line FPC and COF material, the present invention includes polyimides
Layer 100, the ultrathin nanometer metal layer 200 and protection film layer 300 for being formed in 100 at least one side of the polyimide layer are described super
Thin nano metal layer 200 is between the polyimide layer 100 and the protection film layer 300；
The thickness of the polyimide layer 100 is 5-50um；
The thickness of the ultrathin nanometer metal layer 200 is 0.09-0.8um；
The thickness of the protection film layer 300 is 6-60um；
The polyimide layer 100 is polyimide layer of the surface roughness between 80-800nm.Polyamides of the present invention
Imine layer is using roughness in the PI films of 80-800nm, and for optimization between 80-400nm, the roughness of general PI films is 10-
20nm, adhesion is bad, which is a kind of PI resins by roughening treatment, can increase the adhesion with metal alloy,
And the PI films also pass through surface corona or plasma-based processing, can promote surface energy, increase polyimide layer and ultrathin nanometer gold
Belong to the adhesion of layer.
The ultrathin nanometer metal layer 200 is sputtered layer or electroplated layer.
The nano metal substrate is by polyimide layer 100, is formed in the ultra-thin of 100 any surface of the polyimide layer
The single side nano metal substrate that nano metal layer 200 and protection film layer 300 are constituted.
As shown in Figure 1, in the present embodiment, the nano metal substrate is by polyimide layer 100, is formed in described gather
The double-face nanometer metal substrate that the two-sided ultrathin nanometer metal layer 200 of imide layer 100 and protection film layer 300 are constituted.
The thickness of the polyimide layer 100 is 25-50um, and the thickness of the ultrathin nanometer metal layer 200 is 0.09-
The thickness of 0.2um, the protection film layer 300 are 28-60um.
The ultrathin nanometer metal layer 200 is that copper foil layer 201 or copper foil layer 201 are closed with the multilayer that another metal layer is constituted
Gold metal layer, another metal layer refer to silver layer, nickel layer, layers of chrome, palladium layers, aluminium layer, titanium layer, layers of copper, molybdenum layer, indium layer, platinum layer
At least one of with layer gold, wherein the thickness of the copper foil layer 201 is 0.09-0.2um, the thickness of another metal layer
For 0.005-0.015um.
The ultrathin nanometer metal layer 200 is one kind in following six kinds of structures：
One, one layer of structure：As shown in figure 4, being made of single layer copper foil layer 201, the thickness of the copper foil layer 201 is 0.1-
0.2um；
Two, two stacking structure：As shown in figure 5, be made of copper foil layer 201 and the nickel layer 202 for being formed in copper foil layer any surface,
The thickness of the copper foil layer 201 is 0.09-0.15um, and the thickness of the nickel layer 202 is 0.005-0.015um；
Three, two stacking structure：As shown in fig. 6, be made of copper foil layer 201 and the silver layer 203 for being formed in copper foil layer any surface,
The thickness of the copper foil layer 201 is 0.09-0.15um, and the thickness of the silver layer 203 is 0.005-0.015um；
Four, three stacking structure：As shown in fig. 7, by copper foil layer 201 and being formed in the laminated nickel layer 202 of copper foil and being formed
It is constituted in the silver layer 203 of copper foil layer another side, the thickness of the copper foil layer 201 is 0.09-0.15um, the nickel layer 202 and institute
The thickness for stating silver layer 203 is respectively 0.005-0.015um；
Five, three stacking structure：As shown in figure 8, by copper foil layer 201 and being respectively formed in 202 structure of nickel layer on copper foil layer two sides
Thickness at, the copper foil layer 201 is 0.09-0.15um, and the thickness of nickel layer 202 described in two sides is respectively 0.005-0.015um；
Six, three stacking structure：As shown in figure 9, by copper foil layer 201 and being formed in the laminated layers of copper 204 of copper foil and being formed
It is constituted in the nickel layer 202 of copper foil layer another side, the thickness of the copper foil layer 201 is 0.09-0.15um, the layers of copper 204 and institute
The thickness for stating nickel layer 202 is respectively 0.005-0.015um.
The color that the polyimide layer 100 uses for black, yellow, white or Transparent color, but not limited to this.The present invention
Using black polyimide layer, the adhesion ＞ 0.8kgf/cm of black polyimide layer and nano metal layer.
As shown in Fig. 2, the protection film layer 300 is carrier layer, the carrier layer is by pet layer 301 and is formed in
The low adhesion layer 302 on one surface of the pet layer 301 is constituted, and the carrier layer is covered on by the low adhesion layer 302
200 surface of ultrathin nanometer metal layer, wherein the thickness of the pet layer 301 is 23-50um, the low adhesion layer 302
Thickness is 5-10um, and the off-type force of the low adhesion layer 302 is 1-5g.
When low adhesion layer selects high temperature resistant silicon glue adhesion layer or acrylic acid adhesion layer, adherence is splendid, high temperature and humidity
Under, it will not delamination/detach with the interface of ultrathin nanometer metal layer.
As shown in figure 3, the protection film layer 300 is photopolymer layer, the photopolymer layer includes photosensitive resin layer 303 and light-transmissive film
The one side of layer 304, the photosensitive resin layer 303 covers the light-transmissive film layer 304 and another side is covered on the ultrathin nanometer gold
Belong to 200 surface of layer.
Carrier layer can be selected in the protection film layer of the present invention or photopolymer layer, carrier film or dry film are suitable for semi-additive process work
Skill, the slim highdensity graph thinning line requirements of the more applicable FPC or COF materials of technology of semi-additive process.
A kind of manufacturing method of the nano metal substrate for ultra fine-line FPC and COF material：First provide once
Polyimide layer after surface roughening treatment, with sputter or plating mode in the one side of polyimide layer or two-sided sputter or plating
Ultrathin nanometer metal layer then sticks protection film layer to get finished product on the surface of ultrathin nanometer metal layer.
Example the above is only the implementation of the present invention is not intended to limit the scope of the invention, every to utilize this hair
Equivalent structure transformation made by bright specification and accompanying drawing content is applied directly or indirectly in other relevant technical fields,
Similarly it is included within the scope of the present invention.
Claims (10)
1. a kind of nano metal substrate for ultra fine-line FPC and COF material, it is characterised in that：Including polyimide layer, shape
The ultrathin nanometer metal layer and protection film layer of polyimide layer at least one side described in Cheng Yu, the ultrathin nanometer metal layer is between institute
It states between polyimide layer and the protection film layer；
The thickness of the polyimide layer is 5-50um；
The thickness of the ultrathin nanometer metal layer is 0.09-0.8um；
The thickness of the protection film layer is 6-60um；
The polyimide layer is polyimide layer of the surface roughness between 80-800nm；
The ultrathin nanometer metal layer is sputtered layer or electroplated layer.
2. the nano metal substrate according to claim 1 for ultra fine-line FPC and COF material, it is characterised in that：Institute
Stating nano metal substrate is by polyimide layer, is formed in ultrathin nanometer metal layer and the protection of the polyimide layer any surface
The single side nano metal substrate that film layer is constituted.
3. the nano metal substrate according to claim 1 for ultra fine-line FPC and COF material, it is characterised in that：Institute
Stating nano metal substrate is by polyimide layer, is formed in the polyimide layer two-sided ultrathin nanometer metal layer and protective film
The double-face nanometer metal substrate that layer is constituted.
4. the nano metal substrate according to claim 1 for ultra fine-line FPC and COF material, it is characterised in that：Institute
The thickness for stating polyimide layer is 25-50um, and the thickness of the ultrathin nanometer metal layer is 0.09-0.2um, the protection film layer
Thickness be 28-60um.
5. the nano metal substrate according to claim 1 for ultra fine-line FPC and COF material, it is characterised in that：Institute
It is the multilayer alloying metal layer that copper foil layer or copper foil layer are constituted with another metal layer, another gold to state ultrathin nanometer metal layer
It refers at least one of silver layer, nickel layer, layers of chrome, palladium layers, aluminium layer, titanium layer, layers of copper, molybdenum layer, indium layer, platinum layer and layer gold to belong to layer,
Wherein, the thickness of the copper foil layer is 0.09-0.2um, and the thickness of another metal layer is 0.005-0.015um.
6. the nano metal substrate according to claim 5 for ultra fine-line FPC and COF material, it is characterised in that：Institute
It is one kind in following six kinds of structures to state ultrathin nanometer metal layer：
One, one layer of structure：It is made of single layer copper foil layer, the thickness of the copper foil layer is 0.1-0.2um；
Two, two stacking structure：It is made of copper foil layer and the nickel layer for being formed in copper foil layer any surface, the thickness of the copper foil layer is
The thickness of 0.09-0.15um, the nickel layer are 0.005-0.015um；
Three, two stacking structure：It is made of copper foil layer and the silver layer for being formed in copper foil layer any surface, the thickness of the copper foil layer is
The thickness of 0.09-0.15um, the silver layer are 0.005-0.015um；
Four, three stacking structure：By copper foil layer and it is formed in the laminated nickel layer of copper foil and is formed in the silver layer of copper foil layer another side
It constitutes, the thickness of the copper foil layer is 0.09-0.15um, and the thickness of the nickel layer and the silver layer is respectively 0.005-
0.015um；
Five, three stacking structure：It is made of copper foil layer and the nickel layer for being respectively formed in copper foil layer two sides, the thickness of the copper foil layer is
The thickness of 0.09-0.15um, nickel layer described in two sides are respectively 0.005-0.015um；
Six, three stacking structure：By copper foil layer and it is formed in the laminated layers of copper of copper foil and is formed in the nickel layer of copper foil layer another side
It constitutes, the thickness of the copper foil layer is 0.09-0.15um, and the thickness of the layers of copper and the nickel layer is respectively 0.005-
0.015um。
7. the nano metal substrate according to claim 1 for ultra fine-line FPC and COF material, it is characterised in that：Institute
State the adhesion ＞ 0.8kgf/cm of polyimide layer and the ultrathin nanometer metal layer.
8. the nano metal substrate according to claim 1 for ultra fine-line FPC and COF material, it is characterised in that：Institute
It is carrier layer to state protection film layer, and the carrier layer is by pet layer and is formed in the low of surface of the pet layer and sticks together
Layer is constituted, and the carrier layer is covered on the ultrathin nanometer layer on surface of metal by the low adhesion layer, wherein the PET
The thickness of layer is 23-50um, and the thickness of the low adhesion layer is 5-10um, and the off-type force of the low adhesion layer is 1-5g.
9. the nano metal substrate according to claim 1 for ultra fine-line FPC and COF material, it is characterised in that：Institute
It is photopolymer layer to state protection film layer, and the photopolymer layer includes photosensitive resin layer and light-transmissive film layer, and the photosensitive resin layer covers on one side
It covers the light-transmissive film layer and another side is covered on the ultrathin nanometer layer on surface of metal.
10. the manufacturing method of the nano metal substrate according to claim 1 for ultra fine-line FPC and COF material,
It is characterized in that：The polyimide layer after surface roughening treatment is first provided, with sputter or plating mode in polyimide layer
On one side or two-sided sputter or plating ultrathin nanometer metal layer, protection film layer then is sticked on the surface of ultrathin nanometer metal layer, i.e.,
Obtain finished product.
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| CN201710075053.3A CN108430156A (en) | 2017-02-13 | 2017-02-13 | Nano metal substrate and manufacturing method for ultra fine-line FPC and COF material |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109263210A (en) * | 2018-09-29 | 2019-01-25 | 太仓斯迪克新材料科技有限公司 | A kind of Multifunctional silica gel protective film |
| CN110568964A (en) * | 2019-09-12 | 2019-12-13 | 业成科技（成都）有限公司 | Sensor assembly, preparation method thereof, bonding structure and touch panel module |
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| JP2004299312A (en) * | 2003-03-31 | 2004-10-28 | Nippon Steel Chem Co Ltd | Metal-polyimide laminate |
| US20060115670A1 (en) * | 2002-12-13 | 2006-06-01 | Shigeru Tanaka | Thermoplastic polyimide resin film, multilayer body and method for manufacturing printed wiring board composed of same |
| WO2017016395A1 (en) * | 2015-07-29 | 2017-02-02 | 苏州卫鹏机电科技有限公司 | Method for preparing adhesive-free, polyimide flexible printed circuit board |
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| US20060115670A1 (en) * | 2002-12-13 | 2006-06-01 | Shigeru Tanaka | Thermoplastic polyimide resin film, multilayer body and method for manufacturing printed wiring board composed of same |
| JP2004299312A (en) * | 2003-03-31 | 2004-10-28 | Nippon Steel Chem Co Ltd | Metal-polyimide laminate |
| WO2017016395A1 (en) * | 2015-07-29 | 2017-02-02 | 苏州卫鹏机电科技有限公司 | Method for preparing adhesive-free, polyimide flexible printed circuit board |
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| CN109263210A (en) * | 2018-09-29 | 2019-01-25 | 太仓斯迪克新材料科技有限公司 | A kind of Multifunctional silica gel protective film |
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Application publication date: 20180821 |