CN108422101A - A kind of cutting method of sapphire optical window - Google Patents

A kind of cutting method of sapphire optical window Download PDF

Info

Publication number
CN108422101A
CN108422101A CN201810326563.8A CN201810326563A CN108422101A CN 108422101 A CN108422101 A CN 108422101A CN 201810326563 A CN201810326563 A CN 201810326563A CN 108422101 A CN108422101 A CN 108422101A
Authority
CN
China
Prior art keywords
optical window
sapphire
cutting method
sapphire optical
metallic diaphragm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201810326563.8A
Other languages
Chinese (zh)
Other versions
CN108422101B (en
Inventor
赵培
李旭光
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuxi Hoft Optical Technology Co Ltd
Original Assignee
Wuxi Hoft Optical Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuxi Hoft Optical Technology Co Ltd filed Critical Wuxi Hoft Optical Technology Co Ltd
Priority to CN201810326563.8A priority Critical patent/CN108422101B/en
Publication of CN108422101A publication Critical patent/CN108422101A/en
Application granted granted Critical
Publication of CN108422101B publication Critical patent/CN108422101B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/38Removing material by boring or cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043Making grooves, e.g. cutting

Abstract

The present invention provides a kind of cutting methods of sapphire optical window, belong to sapphire optical window production technical field.Laser is carried out to sapphire substrate to precut, and reserves multiple tie points;It is coated with metallic diaphragm in the arbitrary face of the sapphire substrate;UV films are sticked on the metallic diaphragm;Tie point is cut away, and by ultraviolet photolysis UV films, carries out sliver.The metallic diaphragm for avoiding product after the completion of cutting is damaged, and the resultant metal film layer being cut into using the cutting method is without any damage, and it is that efficiency is low effectively to solve the production of small-size product monolithic, the low problem of yield.

Description

A kind of cutting method of sapphire optical window
Technical field
The present invention relates to sapphire optical window production technical field, more particularly to a kind of cutting of sapphire optical window Method.
Background technology
Currently, sapphire bare die cutting technique uses laser cutting substantially, but temperature is very high when due to laser cutting, and blue After gemstone surface has plated metal film, laser cutting can damage metallic film, be easy to cause product rejection.If using first will be blue Jewel is cut into the method that small pieces are coated with metallic diaphragm again, and efficiency is very low, unsuitable mass production.Therefore, one is developed It is kind novel be coated with metal film after sapphire cutting method be the technical issues of being badly in need of solving.
Invention content
The purpose of the present invention is to provide a kind of cutting methods of sapphire optical window, to solve existing cutting efficiency Low problem.
In order to solve the above technical problems, the present invention provides a kind of cutting method of sapphire optical window, including walk as follows Suddenly:
Step 1, reserved multiple tie points precut to sapphire substrate progress laser;
Step 2 is coated with metallic diaphragm in the arbitrary face of the sapphire substrate;
Step 3 sticks UV films on the metallic diaphragm;
Step 4 cuts away tie point, and by ultraviolet photolysis UV films, carries out sliver.
Optionally, sapphire substrate is subjected to twin polishing before the step 1.
Optionally, the quantity of the tie point is 2 ~ 8.
Optionally, the width of the tie point is finally to cut the 1/5 ~ 1/50 of obtained sapphire optical window diameter.
Optionally, ultrasonic cleaning is first carried out before the step 2, washes away the residue on surface.
Optionally, the material of the metallic diaphragm is one or more of Ti, Cr, Ni, Sn, Cu, Pt, Au.
Optionally, it is cut using mechanical bit in the step 4.
A kind of cutting method of sapphire optical window is provided in the present invention, and laser pre-cut is carried out to sapphire substrate It cuts, reserves multiple tie points;It is coated with metallic diaphragm in the arbitrary face of the sapphire substrate;UV is sticked on the metallic diaphragm Film;Tie point is cut away, and by ultraviolet photolysis UV films, carries out sliver.Avoid cutting after the completion of product metallic diaphragm by Damage, the resultant metal film layer being cut into using the cutting method effectively solve the life of small-size product monolithic without any damage Production is that efficiency is low, the low problem of yield.
Description of the drawings
Fig. 1 is the cutting method flow diagram of sapphire optical window provided by the invention;
Fig. 2 is the structural schematic diagram of sapphire substrate provided by the invention.
Specific implementation mode
Below in conjunction with the drawings and specific embodiments to a kind of cutting method work of sapphire optical window proposed by the present invention It is further described.According to following explanation and claims, advantages and features of the invention will become apparent from.It should be noted That attached drawing is all made of very simplified form and uses non-accurate ratio, only to it is convenient, lucidly aid in illustrating this hair The purpose of bright embodiment.
Embodiment one
This hair provides a kind of cutting method of sapphire optical window, and flow diagram is as shown in Figure 1.Include the following steps:
Step S11, it carries out laser to sapphire substrate to precut, reserves multiple tie points;
Step S12, it is coated with metallic diaphragm in the arbitrary face of the sapphire substrate;
Step S13, UV films are sticked on the metallic diaphragm;
Step S14, tie point is cut away, and by ultraviolet photolysis UV films, carries out sliver.
Specifically, first first to sapphire substrate 1 carry out twin polishing, then to its by laser along precut road 3 into Row is precut, reserves 2 ~ 8 tie points, and in the present embodiment one, the quantity of the tie point 2 is 4, as shown in Figure 2.It is described The width of tie point 2 is finally to cut the 1/5 ~ 1/50 of obtained 5 diameter of sapphire optical window;Then use ultrasonic wave to pre- Sapphire substrate cleaning after cutting, washes away the residue on surface;Then it is coated with metal film in the arbitrary face of the sapphire substrate 1 The material of layer, the metallic diaphragm is one or more of Ti, Cr, Ni, Sn, Cu, Pt, Au;It is pasted on the metallic diaphragm Upper UV films protect outermost metallic diaphragm not to be scratched or polluted by cutting residue;It is carried out along Cutting Road 4 by mechanical bit Final cutting, this cutting cuts away four points of connection 2 according to smooth vertical and horizontal method, after ultraviolet photolysis UV Conventional sliver is carried out, sapphire optical window 5 is obtained.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hair Any change, the modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claims Range.

Claims (7)

1. a kind of cutting method of sapphire optical window, which is characterized in that include the following steps:
Step 1, reserved multiple tie points precut to sapphire substrate progress laser;
Step 2 is coated with metallic diaphragm in the arbitrary face of the sapphire substrate;
Step 3 sticks UV films on the metallic diaphragm;
Step 4 cuts away tie point, and by ultraviolet photolysis UV films, carries out sliver.
2. the cutting method of sapphire optical window as described in claim 1, which is characterized in that will before the step 1 Sapphire substrate carries out twin polishing.
3. the cutting method of sapphire optical window as described in claim 1, which is characterized in that the quantity of the tie point is 2 ~ 8.
4. the cutting method of sapphire optical window as described in claim 1, which is characterized in that the width of the tie point is Finally cut the 1/5 ~ 1/50 of obtained sapphire optical window diameter.
5. the cutting method of sapphire optical window described in claim 1, which is characterized in that first carried out before the step 2 Ultrasonic cleaning washes away the residue on surface.
6. the cutting method of sapphire optical window as described in claim 1, which is characterized in that the material of the metallic diaphragm For one or more of Ti, Cr, Ni, Sn, Cu, Pt, Au.
7. the cutting method of sapphire optical window as described in claim 1, which is characterized in that use machine in the step 4 Tool blade is cut.
CN201810326563.8A 2018-04-12 2018-04-12 Cutting method of sapphire optical window Active CN108422101B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810326563.8A CN108422101B (en) 2018-04-12 2018-04-12 Cutting method of sapphire optical window

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201810326563.8A CN108422101B (en) 2018-04-12 2018-04-12 Cutting method of sapphire optical window

Publications (2)

Publication Number Publication Date
CN108422101A true CN108422101A (en) 2018-08-21
CN108422101B CN108422101B (en) 2020-04-14

Family

ID=63160810

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810326563.8A Active CN108422101B (en) 2018-04-12 2018-04-12 Cutting method of sapphire optical window

Country Status (1)

Country Link
CN (1) CN108422101B (en)

Citations (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005243947A (en) * 2004-02-26 2005-09-08 Sumitomo Electric Ind Ltd Method for manufacturing semiconductor device, and semiconductor device
CN1241253C (en) * 2002-06-24 2006-02-08 丰田合成株式会社 Semiconductor element and mfg method
KR20080026400A (en) * 2006-09-20 2008-03-25 삼성전자주식회사 Fixing apparatus for semiconductor wafer
US20080318497A1 (en) * 2007-06-19 2008-12-25 Disco Corporation Method of machining substrate
US20090137097A1 (en) * 2007-11-26 2009-05-28 United Microelectronics Corp. Method for dicing wafer
JP2011131453A (en) * 2009-12-24 2011-07-07 Dainippon Printing Co Ltd Method for manufacturing nanoimprint mold for manufacturing optical element
JP2012114322A (en) * 2010-11-26 2012-06-14 Shinko Electric Ind Co Ltd Dicing method of semiconductor wafer
CN102779786A (en) * 2011-05-12 2012-11-14 株式会社迪思科 Splitting method for optical device wafer
CN102969408A (en) * 2011-08-30 2013-03-13 三星钻石工业股份有限公司 Method of processing a substrate comprising a led pattern
CN103107078A (en) * 2011-11-11 2013-05-15 株式会社迪思科 Optical device wafer processing method
JP2013219271A (en) * 2012-04-11 2013-10-24 Disco Abrasive Syst Ltd Method for processing optical device wafer
JP2014038903A (en) * 2012-08-13 2014-02-27 Disco Abrasive Syst Ltd Wafer processing method
JP2014060290A (en) * 2012-09-18 2014-04-03 Disco Abrasive Syst Ltd Wafer processing method
US20150132925A1 (en) * 2013-11-11 2015-05-14 Disco Corporation Wafer processing method
US20160247964A1 (en) * 2015-02-17 2016-08-25 Genesis Photonics Inc. Light emitting diode and manufacturing method thereof
JP2017092135A (en) * 2015-11-05 2017-05-25 株式会社ディスコ Manufacturing method of device
JP2017199717A (en) * 2016-04-25 2017-11-02 株式会社ディスコ Processing method
JP2018006520A (en) * 2016-06-30 2018-01-11 株式会社ディスコ Wafer processing method
CN107591361A (en) * 2016-07-06 2018-01-16 株式会社迪思科 The manufacture method of semiconductor device chip
CN107685515A (en) * 2017-09-19 2018-02-13 海安浩驰科技有限公司 Fenestrated membrane and preparation method thereof

Patent Citations (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1241253C (en) * 2002-06-24 2006-02-08 丰田合成株式会社 Semiconductor element and mfg method
JP2005243947A (en) * 2004-02-26 2005-09-08 Sumitomo Electric Ind Ltd Method for manufacturing semiconductor device, and semiconductor device
KR20080026400A (en) * 2006-09-20 2008-03-25 삼성전자주식회사 Fixing apparatus for semiconductor wafer
US20080318497A1 (en) * 2007-06-19 2008-12-25 Disco Corporation Method of machining substrate
US20090137097A1 (en) * 2007-11-26 2009-05-28 United Microelectronics Corp. Method for dicing wafer
JP2011131453A (en) * 2009-12-24 2011-07-07 Dainippon Printing Co Ltd Method for manufacturing nanoimprint mold for manufacturing optical element
JP2012114322A (en) * 2010-11-26 2012-06-14 Shinko Electric Ind Co Ltd Dicing method of semiconductor wafer
CN102779786B (en) * 2011-05-12 2016-08-03 株式会社迪思科 The dividing method of optical device wafer
CN102779786A (en) * 2011-05-12 2012-11-14 株式会社迪思科 Splitting method for optical device wafer
CN102969408A (en) * 2011-08-30 2013-03-13 三星钻石工业股份有限公司 Method of processing a substrate comprising a led pattern
CN103107078A (en) * 2011-11-11 2013-05-15 株式会社迪思科 Optical device wafer processing method
JP2013219271A (en) * 2012-04-11 2013-10-24 Disco Abrasive Syst Ltd Method for processing optical device wafer
JP2014038903A (en) * 2012-08-13 2014-02-27 Disco Abrasive Syst Ltd Wafer processing method
JP2014060290A (en) * 2012-09-18 2014-04-03 Disco Abrasive Syst Ltd Wafer processing method
US20150132925A1 (en) * 2013-11-11 2015-05-14 Disco Corporation Wafer processing method
US20160247964A1 (en) * 2015-02-17 2016-08-25 Genesis Photonics Inc. Light emitting diode and manufacturing method thereof
JP2017092135A (en) * 2015-11-05 2017-05-25 株式会社ディスコ Manufacturing method of device
JP2017199717A (en) * 2016-04-25 2017-11-02 株式会社ディスコ Processing method
JP2018006520A (en) * 2016-06-30 2018-01-11 株式会社ディスコ Wafer processing method
CN107591361A (en) * 2016-07-06 2018-01-16 株式会社迪思科 The manufacture method of semiconductor device chip
CN107685515A (en) * 2017-09-19 2018-02-13 海安浩驰科技有限公司 Fenestrated membrane and preparation method thereof

Also Published As

Publication number Publication date
CN108422101B (en) 2020-04-14

Similar Documents

Publication Publication Date Title
CN107068820B (en) A method of improve in GaAs base LED chip cutting process and falls tube core
CN101621026B (en) Back laser cutting method of glass passivated silicon wafer
CN105226143B (en) A kind of cutting method of GaAs base LED chips
CN101465402B (en) Method for manufacturing film LED chip device based on gapless plane bonding
CN104476684B (en) A kind of LED chip cutting method
TW201438078A (en) Method for cutting wafer
CN109559983A (en) The cutting method of wafer
WO2023019738A1 (en) Slicing method for large size ultra-thin lithium niobate wafer
CN108422101A (en) A kind of cutting method of sapphire optical window
TWI644774B (en) a method for separating a brittle material substrate, a substrate holding member for breaking a brittle material substrate, and a frame for adhering the adhesive film used for breaking the brittle material substrate
CN108582529A (en) A kind of cutting method of optical window
CN111070448A (en) Wafer ring cutting method
CN107336090A (en) The method of saw blade secondary use
CN103612015A (en) LED wafer cutting method
CN207630298U (en) A kind of ultra high efficiency multi-wire saw diamond wire
JP6507866B2 (en) Device and method for manufacturing semiconductor chip with solder ball
CN104362080A (en) Method for growing GaN-base thin film materials on Si substrate selectively
CN111092045A (en) Novel GPP chip blue film processing method
CN105789128B (en) A kind of ultra-thin wafers piece saw blade repaiies knife method
TWI262553B (en) Wafer dicing method
JP6561565B2 (en) Method and apparatus for dividing bonded substrate
CN108109907B (en) A kind of bonding method of optimization crystal round fringes removing
CN216760403U (en) Novel reduce electroplating scribing sword that collapses limit
JP2009016778A (en) Method for cutting light-emitting diode chip
CN104290204A (en) Silicon rod gluing method in slice gluing process

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant