CN108394905B - 还原炉全自动平稳运行方法 - Google Patents
还原炉全自动平稳运行方法 Download PDFInfo
- Publication number
- CN108394905B CN108394905B CN201710069075.9A CN201710069075A CN108394905B CN 108394905 B CN108394905 B CN 108394905B CN 201710069075 A CN201710069075 A CN 201710069075A CN 108394905 B CN108394905 B CN 108394905B
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- CN
- China
- Prior art keywords
- hydrogen
- curve
- trichlorosilane
- preset
- pressure relief
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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- 230000009467 reduction Effects 0.000 title claims abstract description 83
- 238000000034 method Methods 0.000 title claims abstract description 49
- 239000001257 hydrogen Substances 0.000 claims abstract description 76
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 76
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 73
- 239000007789 gas Substances 0.000 claims abstract description 58
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims abstract description 53
- 239000005052 trichlorosilane Substances 0.000 claims abstract description 53
- 239000000463 material Substances 0.000 claims abstract description 45
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 230000001105 regulatory effect Effects 0.000 claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 15
- 239000010703 silicon Substances 0.000 claims abstract description 15
- 230000000630 rising effect Effects 0.000 claims abstract description 14
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 12
- 239000002912 waste gas Substances 0.000 claims description 42
- 230000001276 controlling effect Effects 0.000 claims description 6
- 238000007664 blowing Methods 0.000 claims description 5
- 238000012790 confirmation Methods 0.000 claims description 4
- 238000011017 operating method Methods 0.000 claims 4
- 238000006073 displacement reaction Methods 0.000 claims 1
- 238000013022 venting Methods 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 11
- 238000006722 reduction reaction Methods 0.000 description 66
- 230000008569 process Effects 0.000 description 16
- 230000002159 abnormal effect Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 230000009194 climbing Effects 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000005046 Chlorosilane Substances 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D19/00—Arrangements of controlling devices
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D19/00—Arrangements of controlling devices
- F27D2019/0087—Automatisation of the whole plant or activity
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201710069075.9A CN108394905B (zh) | 2017-02-08 | 2017-02-08 | 还原炉全自动平稳运行方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710069075.9A CN108394905B (zh) | 2017-02-08 | 2017-02-08 | 还原炉全自动平稳运行方法 |
Publications (2)
Publication Number | Publication Date |
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CN108394905A CN108394905A (zh) | 2018-08-14 |
CN108394905B true CN108394905B (zh) | 2019-12-31 |
Family
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Family Applications (1)
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CN201710069075.9A Active CN108394905B (zh) | 2017-02-08 | 2017-02-08 | 还原炉全自动平稳运行方法 |
Country Status (1)
Country | Link |
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CN (1) | CN108394905B (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109607549A (zh) * | 2019-01-31 | 2019-04-12 | 内蒙古通威高纯晶硅有限公司 | 一种多晶硅生产中的三氯氢硅生产工艺中的启炉方法 |
CN110879579B (zh) * | 2019-11-11 | 2021-11-12 | 青海黄河上游水电开发有限责任公司新能源分公司 | 基于多晶硅生产装置dcs系统的还原炉顺序控制方法 |
CN113741599B (zh) * | 2021-09-26 | 2022-05-31 | 四川永祥新能源有限公司 | 一种还原炉停炉控制工艺及其系统和计算机可读存储介质 |
CN115594182A (zh) * | 2022-10-28 | 2023-01-13 | 四川永祥新能源有限公司(Cn) | 用于多晶硅还原炉的一键开炉控制方法及其系统和计算机可读存储介质 |
CN117945404A (zh) * | 2024-01-30 | 2024-04-30 | 内蒙古大全半导体有限公司 | 一种集成电路芯片用多晶硅的还原进料方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0570118A (ja) * | 1991-09-13 | 1993-03-23 | Hoxan Corp | キヤストリボン法による多結晶シリコンシートの製造装置 |
CN102109827A (zh) * | 2011-01-14 | 2011-06-29 | 宜昌南玻硅材料有限公司 | 多晶硅生产中供料和供电同步自动控制方法 |
CN102608913A (zh) * | 2011-01-19 | 2012-07-25 | 内蒙古盾安光伏科技有限公司 | 多晶硅生产还原炉停炉控制系统及其方法 |
CN102923711A (zh) * | 2012-11-30 | 2013-02-13 | 内蒙古神舟硅业有限责任公司 | 一种多晶硅还原炉自动控制启炉方法 |
CN105045303A (zh) * | 2015-07-28 | 2015-11-11 | 新疆大全新能源有限公司 | 一种多晶硅生产过程中反应原料流量的控制方法 |
-
2017
- 2017-02-08 CN CN201710069075.9A patent/CN108394905B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0570118A (ja) * | 1991-09-13 | 1993-03-23 | Hoxan Corp | キヤストリボン法による多結晶シリコンシートの製造装置 |
CN102109827A (zh) * | 2011-01-14 | 2011-06-29 | 宜昌南玻硅材料有限公司 | 多晶硅生产中供料和供电同步自动控制方法 |
CN102608913A (zh) * | 2011-01-19 | 2012-07-25 | 内蒙古盾安光伏科技有限公司 | 多晶硅生产还原炉停炉控制系统及其方法 |
CN102923711A (zh) * | 2012-11-30 | 2013-02-13 | 内蒙古神舟硅业有限责任公司 | 一种多晶硅还原炉自动控制启炉方法 |
CN105045303A (zh) * | 2015-07-28 | 2015-11-11 | 新疆大全新能源有限公司 | 一种多晶硅生产过程中反应原料流量的控制方法 |
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CN108394905A (zh) | 2018-08-14 |
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Application publication date: 20180814 Assignee: Inner Mongolia Xinte silicon material Co.,Ltd. Assignor: XINTE ENERGY Co.,Ltd. Contract record no.: X2022990000326 Denomination of invention: Full automatic and stable operation method of reduction furnace Granted publication date: 20191231 License type: Common License Record date: 20220627 Application publication date: 20180814 Assignee: Xinte silicon based new materials Co.,Ltd. Assignor: XINTE ENERGY Co.,Ltd. Contract record no.: X2022990000325 Denomination of invention: Full automatic and stable operation method of reduction furnace Granted publication date: 20191231 License type: Common License Record date: 20220627 |
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