CN108389807A - 用于垂直半导体器件的精度提高的器件体系结构和方法 - Google Patents

用于垂直半导体器件的精度提高的器件体系结构和方法 Download PDF

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Publication number
CN108389807A
CN108389807A CN201810153423.5A CN201810153423A CN108389807A CN 108389807 A CN108389807 A CN 108389807A CN 201810153423 A CN201810153423 A CN 201810153423A CN 108389807 A CN108389807 A CN 108389807A
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CN
China
Prior art keywords
semiconductor devices
vertical semiconductor
gate
terminal
fuse
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Pending
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CN201810153423.5A
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English (en)
Chinese (zh)
Inventor
T.E.哈林顿三世
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D3 Semiconductor Co Ltd
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D3 Semiconductor Co Ltd
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Publication of CN108389807A publication Critical patent/CN108389807A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/493—Fuses, i.e. interconnections changeable from conductive to non-conductive
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/493—Fuses, i.e. interconnections changeable from conductive to non-conductive
    • H10W20/494—Fuses, i.e. interconnections changeable from conductive to non-conductive changeable by the use of an external beam, e.g. laser beam or ion beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links

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  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
CN201810153423.5A 2012-11-26 2013-11-26 用于垂直半导体器件的精度提高的器件体系结构和方法 Pending CN108389807A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261729720P 2012-11-26 2012-11-26
US61/729720 2012-11-26
CN201380071294.0A CN105051876B (zh) 2012-11-26 2013-11-26 用于垂直半导体器件的精度提高的器件体系结构和方法

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Publications (1)

Publication Number Publication Date
CN108389807A true CN108389807A (zh) 2018-08-10

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CN201810153423.5A Pending CN108389807A (zh) 2012-11-26 2013-11-26 用于垂直半导体器件的精度提高的器件体系结构和方法
CN201380071294.0A Expired - Fee Related CN105051876B (zh) 2012-11-26 2013-11-26 用于垂直半导体器件的精度提高的器件体系结构和方法

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Country Status (7)

Country Link
US (3) US9117709B2 (https=)
EP (1) EP2923375A4 (https=)
JP (1) JP6276905B2 (https=)
KR (1) KR20150092212A (https=)
CN (2) CN108389807A (https=)
MY (1) MY170333A (https=)
WO (1) WO2014082098A1 (https=)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
CN111383695A (zh) * 2018-12-26 2020-07-07 美光科技公司 在读取电路中调谐电压

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US9704598B2 (en) * 2014-12-27 2017-07-11 Intel Corporation Use of in-field programmable fuses in the PCH dye
JP6610785B2 (ja) 2016-07-04 2019-11-27 三菱電機株式会社 半導体装置の製造方法
WO2018125110A1 (en) * 2016-12-29 2018-07-05 Intel Corporation Configurable resistor
CN107065997B (zh) * 2017-02-09 2018-10-26 张帅 修调功率器件输入电阻的控制方法
CN107769767B (zh) * 2017-10-16 2021-03-09 苏州浪潮智能科技有限公司 一种电阻修调电路及方法
DE112020001798T5 (de) * 2019-04-08 2022-01-20 Rohm Co. Ltd. Verfahren zur messung eines bauelementparameters
WO2022205169A1 (zh) * 2021-03-31 2022-10-06 华为技术有限公司 一种场效应晶体管、其制作方法、开关电路及电路板
JP7775618B2 (ja) * 2021-10-05 2025-11-26 富士電機株式会社 デバイス、半導体装置、ゲートドライバ、および、パワーモジュール
CN115684864B (zh) * 2023-01-05 2023-03-31 佛山市联动科技股份有限公司 适于开关时间测试和阈值电压测试的测试电路及测试方法

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US5446310A (en) * 1992-06-08 1995-08-29 North Carolina State University Integrated circuit power device with external disabling of defective devices and method of fabricating same
JPH08316327A (ja) * 1995-05-18 1996-11-29 Sony Corp 半導体装置の製造方法
US6433386B1 (en) * 1997-10-20 2002-08-13 Samsung Electronics Co., Ltd. Sense FET having a selectable sense current ratio and method of manufacturing the same
US20050007160A1 (en) * 2003-07-10 2005-01-13 Neff Robert M. R. Tunable differential transconductor and adjustment method
US7960997B2 (en) * 2007-08-08 2011-06-14 Advanced Analogic Technologies, Inc. Cascode current sensor for discrete power semiconductor devices

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US4779060A (en) * 1987-06-01 1988-10-18 Gentron Corporation Linear power amplifying system
JP2664793B2 (ja) * 1990-04-06 1997-10-22 株式会社東芝 半導体装置の製造方法
US5563447A (en) * 1993-09-07 1996-10-08 Delco Electronics Corp. High power semiconductor switch module
GB9605672D0 (en) 1996-03-18 1996-05-22 Westinghouse Brake & Signal Insulated gate bipolar transistors
US7271643B2 (en) * 2005-05-26 2007-09-18 International Business Machines Corporation Circuit for blowing an electrically blowable fuse in SOI technologies
US7782083B2 (en) * 2006-12-14 2010-08-24 Cambridge Semiconductor Limited Trimming circuits and methods
US10600902B2 (en) * 2008-02-13 2020-03-24 Vishay SIliconix, LLC Self-repairing field effect transisitor
DE102009047670B4 (de) * 2009-12-08 2020-07-30 Robert Bosch Gmbh Schaltungseinrichtung mit einem Halbleiter-Bauelement
JP2012160538A (ja) * 2011-01-31 2012-08-23 Elpida Memory Inc 半導体装置
KR20130017349A (ko) * 2011-08-10 2013-02-20 삼성전자주식회사 모니터링 패드 및 이를 포함하는 반도체 장치

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US4742425A (en) * 1985-09-11 1988-05-03 Robert Bosch Gmbh Multiple-cell transistor with base and emitter fuse links
US5446310A (en) * 1992-06-08 1995-08-29 North Carolina State University Integrated circuit power device with external disabling of defective devices and method of fabricating same
JPH08316327A (ja) * 1995-05-18 1996-11-29 Sony Corp 半導体装置の製造方法
US6433386B1 (en) * 1997-10-20 2002-08-13 Samsung Electronics Co., Ltd. Sense FET having a selectable sense current ratio and method of manufacturing the same
US20050007160A1 (en) * 2003-07-10 2005-01-13 Neff Robert M. R. Tunable differential transconductor and adjustment method
US7960997B2 (en) * 2007-08-08 2011-06-14 Advanced Analogic Technologies, Inc. Cascode current sensor for discrete power semiconductor devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111383695A (zh) * 2018-12-26 2020-07-07 美光科技公司 在读取电路中调谐电压
CN111383695B (zh) * 2018-12-26 2021-05-14 美光科技公司 在读取电路中调谐电压

Also Published As

Publication number Publication date
US9589889B2 (en) 2017-03-07
US9117709B2 (en) 2015-08-25
US20140145240A1 (en) 2014-05-29
JP2016508284A (ja) 2016-03-17
US20150340318A1 (en) 2015-11-26
EP2923375A4 (en) 2016-07-20
MY170333A (en) 2019-07-17
US9997455B2 (en) 2018-06-12
EP2923375A1 (en) 2015-09-30
US20170179024A1 (en) 2017-06-22
JP6276905B2 (ja) 2018-02-07
CN105051876B (zh) 2018-03-27
KR20150092212A (ko) 2015-08-12
CN105051876A (zh) 2015-11-11
WO2014082098A1 (en) 2014-05-30

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Application publication date: 20180810