CN108385075A - A kind of realization wafer picks and places and pinpoint rotary heating mechanism with MASK - Google Patents
A kind of realization wafer picks and places and pinpoint rotary heating mechanism with MASK Download PDFInfo
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- CN108385075A CN108385075A CN201810454513.8A CN201810454513A CN108385075A CN 108385075 A CN108385075 A CN 108385075A CN 201810454513 A CN201810454513 A CN 201810454513A CN 108385075 A CN108385075 A CN 108385075A
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- 230000007246 mechanism Effects 0.000 title claims abstract description 100
- 238000010438 heat treatment Methods 0.000 title claims abstract description 51
- 238000002791 soaking Methods 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910002804 graphite Inorganic materials 0.000 claims description 5
- 239000010439 graphite Substances 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 abstract description 61
- 230000004807 localization Effects 0.000 description 5
- 238000007789 sealing Methods 0.000 description 4
- 239000012530 fluid Substances 0.000 description 3
- 239000000686 essence Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention discloses a kind of realization wafers and MASK to pick and place and pinpoint rotary heating mechanism, including double-layer lifting mechanism, wafer positioning rotating cylinder, heating device, rotating mechanism and detent mechanism, the detent mechanism is mounted on the bottom of rotating mechanism, the wafer positioning rotating cylinder is mounted on the top of rotating mechanism, the heating device is mounted on inside wafer positioning rotating cylinder, the top that rotating cylinder is positioned in wafer is arranged in the double-layer lifting mechanism, and bottom is fixedly connected with the top of rotating mechanism.The the picking and placeing of rotation, heating, wafer and MASK, wafer and MASK the function sets such as are accurately positioned in same mechanism by the present invention, realize wafer and the automatic and accurate positioning function of MASK.
Description
Technical field
The invention belongs to semiconductor production equipment technical field, picked and placeed more particularly to a kind of realization wafer and MASK and smart
Determine the rotary heating mechanism of position.
Background technology
In semiconductor PVD, CVD technique, it is often necessary to be placed above wafer in vacuum environment of different shapes
MASK (mask plate) deposits the film of specific function by specific figure on MASK in crystal column surface.To ensure the essence of film
Degree, must be requested that wafer and MASK precise positionings, meanwhile, in order to improve the quality and film thickness uniformity of film, in coating process
In need the rotation that is heated at high temperature to wafer and remained a constant speed.But in existing equipment, be not only difficult to realize to wafer and
The precise positioning of MASK, and unevenness is heated, it be easy to cause product quality problem.
Therefore, how solve the above problems the emphasis studied as those skilled in the art.
Invention content
It is an object of the invention to provide a kind of realization wafers and MASK to pick and place and pinpoint rotary heating mechanism, energy
It is fully solved in place of above-mentioned the deficiencies in the prior art.
The purpose of the present invention is realized by following technical proposals：
A kind of realization wafer picks and places and pinpoint rotary heating mechanism, including double-layer lifting mechanism, wafer with MASK
Rotating cylinder, heating device, rotating mechanism and detent mechanism are positioned, the detent mechanism is mounted on the bottom of rotating mechanism, localization machine
Structure includes driving cylinder and locating shaft, the driving cylinder by connecting seat and positioning axis connection, drive cylinder cylinder axis and
Rotating mechanism bottom connects, and the rotating mechanism bottom is provided with location hole, and the locating shaft is aligned with location hole and mutually matches,
The wafer positioning rotating cylinder is mounted on the top of rotating mechanism, and the heating device is mounted on inside wafer positioning rotating cylinder, wafer
Several positioning pins are provided at the top of positioning rotating cylinder, the double-layer lifting mechanism includes lifting column and double decked flat pallet, the double-deck support
Disk is mounted on lifting column, and the bottom end of the lifting column is fixed at the top of rotating mechanism.
Preferably, being provided with water-cooling system in the rotating mechanism.
Preferably, the double decked flat pallet is followed successively by MASK pallets and wafer location tray, the MASK supports from top to bottom
It is provided on disk and wafer location tray and the matched dowel hole of positioning pin.
Preferably, the double-layer lifting mechanism is by the wavy metal seal of tube, and lifting column is controlled by driving motor.
Preferably, being provided with soaking plate at the top of the heating device, it is provided with graphite flake below the soaking plate, it is described
Thermal insulation board is provided with outside heating device.
Preferably, being provided with the temperature control thermocouple of control heating temperature in the heating device.
Compared with prior art, the beneficial effects of the present invention are：
1. by innovative design, for the first time by the picking and placeing of rotation, heating, wafer and MASK, wafer and MASK are accurately positioned
Function set is in same mechanism.
2. by the way that positioning pin is arranged on rotating cylinder, wafer and the automatic and accurate positioning function of MASK are realized.
3. by the way that positioning device is arranged, it is ensured that rotating mechanism is parked in same position every time, ensures per wafer plated film
The consistency of position.
4. by the way that double-layer lifting mechanism is arranged, realize that wafer and the independent of MASK pick and place.
Description of the drawings
Fig. 1 is the stereogram of the present invention；
Fig. 2 is the front view of the present invention；
Fig. 3 is the vertical view of the present invention.
Reference numeral：1- double-layer liftings mechanism, 2- wafers position rotating cylinder, 3- heating devices, 4- rotating mechanisms, 5- localization machines
Structure, 6- driving cylinders, 7- locating shafts, 8- connecting seats, 9- positioning pins, 10- lifting columns, 11- double decked flat pallets, 12-MASK pallets,
13- wafer location trays, 14- dowel holes, 15- top flanges, 16- top flanges, 17- servo drive motors.
Specific implementation mode
With reference to specific embodiments and the drawings, the present invention is further illustrated.
Embodiment one
As shown in Figure 1 to Figure 3, a kind of realization wafer and MASK pick and place with pinpoint rotary heating mechanism, including it is double
Elevator mechanisms 1, wafer positioning rotating cylinder 2, heating device 3, rotating mechanism 4 and detent mechanism 5, in 5 inside of rotating mechanism uses
Meshing gear be driven, by magnet fluid sealing axis by servo motor drive 17, can forward and reverse rotation, rotating speed is adjustable, vacuum leak rate
Less than 1 × 10-9Pam3/s, the top of rotating mechanism 4 is provided with top flange 15, and bottom is provided with flange in the bottom 16, localization machine
Structure 5 is mounted on the flange in the bottom 17 of rotating mechanism 4, and detent mechanism 5 includes driving cylinder 6 and locating shaft 7, and driving cylinder 6 is logical
It crosses connecting seat 8 to connect with locating shaft 7, the cylinder axis of driving cylinder 6 is connect with 4 bottom of rotating mechanism, and locating shaft 7 is by driving cylinder
6 drivings realize that raising and lowering, 4 bottom of rotating mechanism are provided with location hole, and locating shaft 7 is aligned and is mutually matched with location hole,
Wafer positions rotating cylinder 2 and is mounted in the top flange 15 of rotating mechanism 4, wafer positioning rotating cylinder 2 top be provided with 3 it is high-precision fixed
Position pin 9, double-layer lifting mechanism 1 include lifting column 10 and double decked flat pallet 11, and double decked flat pallet 11 is mounted on lifting column 10, bilayer support
Disk 11 is from top to bottom followed successively by MASK pallets 12 and wafer location tray 13, and MASK pallets 12 and wafer location tray 13 are provided with
The bottom end of the dowel hole 14 matched with positioning pin 9, lifting column 10 is fixed on 4 top of rotating mechanism, and double decked flat pallet 11 was lifting
Cheng Zhong, positioning pin coordinate with dowel hole, realize that the precise positioning to double decked flat pallet 11, heating device 3 are positioned mounted on wafer
In rotating cylinder 2, the rotation that rotating cylinder 2 will not be positioned to wafer causes any interference, and 3 top of heating device, which is provided with to position with wafer, holds in the palm
The soaking plate that disk 13 is aligned, soaking plate lower section are provided with graphite flake, this design ensures temperature uniformity within ± 10 DEG C, highest
Heating temperature carries out radiant heating up to 700 DEG C, to wafer, and thermal insulation board is provided with outside heating device 3, reduces external radiation heat
Influence to other components.
When the present invention works, in 4 rotary course of rotating mechanism, the cylinder axis of driving cylinder 6 is retracted, and locating shaft 7 drops to
4 lower section of rotating mechanism, the not action of shadow rotating mechanism 4.Before the rotation of rotating mechanism 4 starts and after rotation, the gas of cylinder 6 is driven
Cylinder shaft is stretched out, and locating shaft 7 is inserted into the location hole of rotating mechanism 4, and the zero-bit of rotating mechanism 4 is made to be always at same position not
Become, that is, ensure that the relative position of wafer and MASK are constant.Locating shaft 7 is sealed using double O-ring seals, ensures that locating shaft 7 exists
Vacuum leak rate under motion and standstill state is less than 1 × 10-9Pam3/ s, meanwhile, MASK pallets are arranged in 1 top of double-layer lifting mechanism
13 and wafer location tray 14, wafer and MASK can be placed respectively.By adjusting the height of each layer blowing pallet, it can be achieved that wafer
With individually picking and placeing for MASK.
The present invention ensures that the vacuum leak rate of entire mechanism is less than 1 × 10-9Pam3/s by reliable design of Sealing Structure,
It is tested by actually using, this patent can use in the high vacuum environment of 3 × 10-5Pa.
Embodiment two
As shown in Figure 1 to Figure 3, a kind of realization wafer and MASK pick and place with pinpoint rotary heating mechanism, including it is double
Elevator mechanisms 1, wafer positioning rotating cylinder 2, heating device 3, rotating mechanism 4 and detent mechanism 5, in 5 inside of rotating mechanism uses
Meshing gear be driven, by magnet fluid sealing axis by servo motor drive 17, can forward and reverse rotation, rotating speed is adjustable, vacuum leak rate
Less than 1 × 10-9Pam3/s, the top of rotating mechanism 4 is provided with top flange 15, and bottom is provided with flange in the bottom 16, localization machine
Structure 5 is mounted on the flange in the bottom 17 of rotating mechanism 4, and detent mechanism 5 includes driving cylinder 6 and locating shaft 7, and driving cylinder 6 is logical
It crosses connecting seat 8 to connect with locating shaft 7, the cylinder axis of driving cylinder 6 is connect with 4 bottom of rotating mechanism, and locating shaft 7 is by driving cylinder
6 drivings realize that raising and lowering, 4 bottom of rotating mechanism are provided with location hole, and locating shaft 7 is aligned and is mutually matched with location hole,
Wafer positions rotating cylinder 2 and is mounted in the top flange 15 of rotating mechanism 4, wafer positioning rotating cylinder 2 top be provided with 3 it is high-precision fixed
Position pin 9, double-layer lifting mechanism 1 include lifting column 10 and double decked flat pallet 11, and double decked flat pallet 11 is mounted on lifting column 10, bilayer support
Disk 11 is from top to bottom followed successively by MASK pallets 12 and wafer location tray 13, and MASK pallets 12 and wafer location tray 13 are provided with
The bottom end of the dowel hole 14 matched with positioning pin 9, lifting column 10 is fixed on 4 top of rotating mechanism, and double decked flat pallet 11 was lifting
Cheng Zhong, positioning pin coordinate with dowel hole, realize that the precise positioning to double decked flat pallet 11, heating device 3 are positioned mounted on wafer
In rotating cylinder 2, the rotation that rotating cylinder 2 will not be positioned to wafer causes any interference, and 3 top of heating device, which is provided with to position with wafer, holds in the palm
The soaking plate that disk 13 is aligned, soaking plate lower section are provided with graphite flake, thermal insulation board are provided with outside heating device 3.
In the present embodiment, the temperature control thermocouple for controlling heating temperature is additionally provided in the heating device 3, this design
It realizes that intelligent automation controls heating temperature, improves the safety of the present apparatus.
Embodiment three
As shown in Figure 1 to Figure 3, a kind of realization wafer and MASK pick and place with pinpoint rotary heating mechanism, including it is double
Elevator mechanisms 1, wafer positioning rotating cylinder 2, heating device 3, rotating mechanism 4 and detent mechanism 5, in 5 inside of rotating mechanism uses
Meshing gear be driven, by magnet fluid sealing axis by servo motor drive 17, can forward and reverse rotation, rotating speed is adjustable, vacuum leak rate
Less than 1 × 10-9Pam3/s, the top of rotating mechanism 4 is provided with top flange 15, and bottom is provided with flange in the bottom 16, localization machine
Structure 5 is mounted on the flange in the bottom 17 of rotating mechanism 4, and detent mechanism 5 includes driving cylinder 6 and locating shaft 7, and driving cylinder 6 is logical
It crosses connecting seat 8 to connect with locating shaft 7, the cylinder axis of driving cylinder 6 is connect with 4 bottom of rotating mechanism, and locating shaft 7 is by driving cylinder
6 drivings realize that raising and lowering, 4 bottom of rotating mechanism are provided with location hole, and locating shaft 7 is aligned and is mutually matched with location hole,
Wafer positions rotating cylinder 2 and is mounted in the top flange 15 of rotating mechanism 4, wafer positioning rotating cylinder 2 top be provided with 3 it is high-precision fixed
Position pin 9, double-layer lifting mechanism 1 include lifting column 10 and double decked flat pallet 11, and double decked flat pallet 11 is mounted on lifting column 10, bilayer support
Disk 11 is from top to bottom followed successively by MASK pallets 12 and wafer location tray 13, and MASK pallets 12 and wafer location tray 13 are provided with
The bottom end of the dowel hole 14 matched with positioning pin 9, lifting column 10 is fixed on 4 top of rotating mechanism, and double decked flat pallet 11 was lifting
Cheng Zhong, positioning pin coordinate with dowel hole, realize that the precise positioning to double decked flat pallet 11, heating device 3 are positioned mounted on wafer
In rotating cylinder 2, the rotation that rotating cylinder 2 will not be positioned to wafer causes any interference, and 3 top of heating device, which is provided with to position with wafer, holds in the palm
The soaking plate that disk 13 is aligned is provided with graphite flake below soaking plate, is provided with thermal insulation board outside heating device 3, in heating device 3
It is provided with the temperature control thermocouple for controlling heating temperature.
In the present embodiment, it is provided with water-cooling system in the rotating mechanism 4, this design ensures rotating mechanism 4 at normal temperatures
Work improves service life.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
All any modification, equivalent and improvement etc., should all be included in the protection scope of the present invention made by within refreshing and principle.
Claims (6)
1. a kind of realization wafer picks and places and pinpoint rotary heating mechanism with MASK, it is characterised in that：Including double-layer lifting
Mechanism (1), wafer positioning rotating cylinder (2), heating device (3), rotating mechanism (4) and detent mechanism (5), the detent mechanism (5)
Bottom mounted on rotating mechanism (4), detent mechanism (5) include driving cylinder (6) and locating shaft (7), the driving cylinder (6)
It is connect with locating shaft (7) by connecting seat (8), the cylinder axis of driving cylinder (6) is connect with rotating mechanism (4) bottom, the rotation
Rotation mechanism (4) bottom is provided with location hole (9), and the locating shaft (7) is aligned and is mutually matched with location hole, the wafer positioning
Rotating cylinder (2) is mounted on the top of rotating mechanism (4), and the heating device (3) is mounted on wafer positioning rotating cylinder (2) inside, wafer
Several positioning pins (9) are provided at the top of positioning rotating cylinder (2), the double-layer lifting mechanism (1) includes lifting column (10) and the double-deck support
Disk (11), the double decked flat pallet (11) are mounted on lifting column (10), and the bottom end of the lifting column (10) is fixed on rotating mechanism
(4) top.
2. a kind of realization wafer according to claim 1 picks and places and pinpoint rotary heating mechanism, spy with MASK
Sign is：It is provided with water-cooling system in the rotating mechanism (4).
3. a kind of realization wafer according to claim 1 picks and places and pinpoint rotary heating mechanism, spy with MASK
Sign is：The double decked flat pallet (11) is followed successively by MASK pallets (12) and wafer location tray (13), the MASK from top to bottom
It is provided on pallet (12) and wafer location tray (13) and positioning pin (9) matched dowel hole (14).
4. a kind of realization wafer according to claim 1 picks and places and pinpoint rotary heating mechanism, spy with MASK
Sign is：The double-layer lifting mechanism (1) is by the wavy metal seal of tube, and lifting column (10) is controlled by driving motor.
5. a kind of realization wafer according to claim 1 picks and places and pinpoint rotary heating mechanism, spy with MASK
Sign is：It is provided with soaking plate at the top of the heating device (3), graphite flake, the heating dress are provided with below the soaking plate
It sets and is provided with thermal insulation board outside (3).
6. a kind of realization wafer according to claim 5 picks and places and pinpoint rotary heating mechanism, spy with MASK
Sign is：The temperature control thermocouple of control heating temperature is provided in the heating device (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810454513.8A CN108385075B (en) | 2018-05-14 | 2018-05-14 | Rotary heating mechanism for realizing picking, placing and accurate positioning of wafer and MASK |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810454513.8A CN108385075B (en) | 2018-05-14 | 2018-05-14 | Rotary heating mechanism for realizing picking, placing and accurate positioning of wafer and MASK |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108385075A true CN108385075A (en) | 2018-08-10 |
| CN108385075B CN108385075B (en) | 2024-02-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810454513.8A Active CN108385075B (en) | 2018-05-14 | 2018-05-14 | Rotary heating mechanism for realizing picking, placing and accurate positioning of wafer and MASK |
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| CN (1) | CN108385075B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111455341A (en) * | 2020-06-18 | 2020-07-28 | 上海陛通半导体能源科技股份有限公司 | Physical vapor deposition equipment based on magnetic coupling rotation |
| CN112359339A (en) * | 2020-12-10 | 2021-02-12 | 百腾科技(苏州)有限公司 | Cooling turntable mechanism for vacuum coating |
| CN114059034A (en) * | 2021-10-20 | 2022-02-18 | 北京中科科美科技股份有限公司 | Special vacuum continuous beat type coating system |
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| TW460941B (en) * | 1999-04-23 | 2001-10-21 | Toshiba Machine Co Ltd | Wafer heating device and method of controlling the same background of the invention |
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| CN105483638A (en) * | 2015-12-16 | 2016-04-13 | 昆山国显光电有限公司 | Positioning device of evaporation equipment |
| CN208803139U (en) * | 2018-05-14 | 2019-04-30 | 成都华聚科技有限公司 | A kind of realization wafer and MASK is picked and placed and pinpoint rotary heating mechanism |
-
2018
- 2018-05-14 CN CN201810454513.8A patent/CN108385075B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW460941B (en) * | 1999-04-23 | 2001-10-21 | Toshiba Machine Co Ltd | Wafer heating device and method of controlling the same background of the invention |
| JP2002353292A (en) * | 2001-05-29 | 2002-12-06 | Tokyo Electron Ltd | Apparatus and system for treating substrate, and discrimination method and method for treating substrate |
| US20090277359A1 (en) * | 2008-05-06 | 2009-11-12 | Gm Global Technology Operations, Inc. | Reconfigurable Pallet Using Pins and Hollow Supports |
| KR20100045790A (en) * | 2008-10-24 | 2010-05-04 | 현대자동차주식회사 | Device for preventing interference of locating pin |
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| CN105483638A (en) * | 2015-12-16 | 2016-04-13 | 昆山国显光电有限公司 | Positioning device of evaporation equipment |
| CN208803139U (en) * | 2018-05-14 | 2019-04-30 | 成都华聚科技有限公司 | A kind of realization wafer and MASK is picked and placed and pinpoint rotary heating mechanism |
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| CN111455341A (en) * | 2020-06-18 | 2020-07-28 | 上海陛通半导体能源科技股份有限公司 | Physical vapor deposition equipment based on magnetic coupling rotation |
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| CN114059034A (en) * | 2021-10-20 | 2022-02-18 | 北京中科科美科技股份有限公司 | Special vacuum continuous beat type coating system |
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