CN102110634B - Rotary heating adsorption device - Google Patents
Rotary heating adsorption device Download PDFInfo
- Publication number
- CN102110634B CN102110634B CN2010105556171A CN201010555617A CN102110634B CN 102110634 B CN102110634 B CN 102110634B CN 2010105556171 A CN2010105556171 A CN 2010105556171A CN 201010555617 A CN201010555617 A CN 201010555617A CN 102110634 B CN102110634 B CN 102110634B
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- heating
- wafer
- hot plate
- rotation axis
- absorption hot
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
Abstract
The invention relates to the field of semiconductor equipment, in particular to a rotary heating adsorption device, and discloses a technological processing device which integrates various functions such as loading, adsorbing, heating, rotating and the like during technological processing of a wafer. The device is provided with an adsorption heat plate, a supporting pin driving device, a rotating slip ring and a rotating shaft, wherein the top of the rotating shaft is provided with the absorption heat plate; the wafer is arranged on the top of the adsorption heat plate; the rotating slip ring is connected to the rotating shaft; a vacuum passage and a cable passage are formed in the rotating shaft; and the output end of the supporting pin driving device is connected with supporting pins which penetrate through the adsorption heat plate and are uniformly distributed at the bottom of the wafer. Through the device, the problems such as difficulty in simultaneous realization of adsorbing, heating, rotating and the like existing in the prior art are solved. The device integrates a wafer adsorption function, a speed controllable wafer rotation function and a heating function of heating the wafer to different temperatures according to different requirements, so that the problems are completely solved.
Description
Technical field
The present invention relates to field of semiconductor devices, be specially a kind of adsorbent equipment of rotatable heating, the multi-functional process treatment devices that integrate such as the loading when it is the wafer process processing, absorption, heating, rotation.The present invention is used for the automatic double surface gluer, developing apparatus, cleaning equipment, etching apparatus of manufacture of semiconductor etc. more, and especially spray-bonding crafts such as TSV (silicon through hole) processing procedure, MEMS (MEMS) processing procedure being handled is must be obligato.
Background technology
At present, along with the variation of manufacture of semiconductor, PROCESS FOR TREATMENT a lot of in the equipment become increasingly complex; In manufacture process, require also loaded down with trivial details more to wafer state; There are a lot of processing procedures to need wafer under heated condition, to possess absorption, spinfunction simultaneously,, and should vacuum suction heat rotation again because the limitation of heating can cause trouble to rotation; Just more extremely difficult; If substep carries out said process, can make the processes processing procedure of whole wafer various defectives occur again, and can not satisfy the processing procedure requirement.
Summary of the invention
The object of the present invention is to provide a kind of adsorbent equipment of rotatable heating, solve problems such as realizing absorption and heating rotation difficulty when existing in the prior art.This device is with the wafer adsorption function, and the wafer spinfunction of speed-controllable rolls into one the heating function that wafer is heated to different temperatures according to demands of different, has solved the problems referred to above fully.
The technical solution adopted for the present invention to solve the technical problems is:
A kind of adsorbent equipment of rotatable heating, this device are provided with the absorption hot plate, support needle actuating device, rotary slip ring, rotation axis, and the absorption hot plate is installed at the rotation axis top; Wafer is arranged at absorption hot plate top; Rotary slip ring is connected on the rotation axis, is provided with vacuum passage and cable passage in the rotation axis, and the output that supports needle actuating device is connected with the support pin; Support pin and pass the absorption hot plate, support pin and be uniformly distributed in the wafer bottom.
The adsorbent equipment of described rotatable heating also comprises rotary electric machine and transmission mechanism, and the output of rotary electric machine connects rotation axis through transmission mechanism.
Vacuum passage in the adsorbent equipment of described rotatable heating, rotation axis is connected with vacuum line through rotary slip ring, in said vacuum passage and vacuum line junction, seals through vacuum sealing device.
The adsorbent equipment of described rotatable heating loads reseting sensor in the rotation axis outside.
The adsorbent equipment of described rotatable heating, absorption hot plate upper surface is circular, square or irregularly shaped, absorption hot plate surface is scratched has groove, gash depth 0.2mm-3mm, groove width 0.5mm-5mm, groove communicates with the vacuum passage at absorption hot plate center.
The adsorbent equipment of described rotatable heating has at least 3 to support the pin through hole on the absorption hot plate, and supporting the pin through hole is to support pin passage up and down, supports pin through-hole diameter 2-10mm.
The adsorbent equipment of described rotatable heating, the size of absorption hot plate and the size shape of wafer to be processed are complementary, and the size of absorption hot plate face is less than or equals the size of wafer.
The adsorbent equipment of described rotatable heating, the heat of adsorption intralamellar part is provided with heating plate and heater strip, and heater strip is evenly coiling in heating plate, and the centre bore of heating plate is a vacuum passage, and vacuum passage is through the heat resistant joint ring sealing.
The adsorbent equipment of described rotatable heating, heating cable line that heating plate is inner and temperature sensor cable are through rotary slip ring output.
Advantage of the present invention and beneficial effect are:
1, the loading of wafer of the present invention is accomplished by the rise and fall of supporting pin, fits fully with following plane heat of adsorption plate after the wafer load; Absorption has groove above the hot plate, and groove connects the vacuum pipe of bottom rotation axis, through vacuum with the wafer adsorbed close; The heat of adsorption intralamellar part is installed heating module; Can the heat of adsorption plate temperature be controlled at the temperature of appointment, thereby wafer is heated to the temperature of appointment, rotation axis is a motor-driven; Drive whole absorption hot plate and wafer and rotate together, the cable of absorption hot plate and temperature sensor is accomplished rotating function through rotary slip ring.
2, gas circuit of the present invention, circuit isolation work realize accurate, the random spinfunction of wafer temperature control.
3, the present invention's performance rational in infrastructure is stable, and is easy to maintenance, and multi-functional collection can satisfy the kinds of processes processing procedure all over the body, is applicable to various semiconductor equipments.
Description of drawings
Fig. 1 is a general structure sketch map of the present invention.
Fig. 2 is absorption hot plate and power transmission shaft installed beside reseting sensor sketch map.
Fig. 3 is an absorption hot plate upper surface sketch map.
Fig. 4 is a heat of adsorption intralamellar part sketch map.
Fig. 5 is power transmission shaft inner vacuum passage and cable passage sketch map.
Each number designation among the figure is represented respectively:
101, wafer; 102, absorption hot plate; 103, support needle actuating device; 104, rotary slip ring; 105, vacuum sealing device; 106, vacuum line; 107, rotation axis; 108, substrate; 109, rotary electric machine; 110, transmission mechanism (belt gear); 111, support pin; 201, reseting sensor; 301, support the pin through hole; 302, groove; 303, vacuum passage I; 401, heating plate; 402, heater strip; 501, cable passage; 502, vacuum passage II; 503, temperature sensor.
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is further specified.
Shown in Fig. 1-5; The adsorbent equipment of the rotatable heating of the present invention mainly comprises: wafer 101, absorption hot plate 102, support needle actuating device 103, rotary slip ring 104, vacuum sealing device 105, vacuum line 106, rotation axis 107, substrate 108, rotary electric machine 109, transmission mechanism (belt gear) 110, support pin 111 etc., and concrete structure is following:
Substrate 108 bottoms are provided with rotary electric machine 109, support needle actuating device 103; Substrate 108 tops are provided with absorption hot plate 102, and the output of rotary electric machine 109 connects rotation axis 107 through transmission mechanism (belt gear) 110, and absorption hot plate 102 is installed on rotation axis 107 tops; Wafer 101 is arranged at absorption hot plate 102 tops; Rotary slip ring 104 is connected on the rotation axis 107 through jackscrew, is provided with vacuum passage II 502 and cable passage 501 in the rotation axis 107, and said vacuum passage II 502 is connected with vacuum line 106; In said vacuum passage II 502 and vacuum line 106 junctions, through vacuum sealing device 105 sealings; The output that supports needle actuating device 103 is connected with the support pin 111 more than three or three; Support pin 111 and pass absorption hot plate 102; Support pin 111 and can be uniformly distributed in wafer 101 bottoms; Support pin 111 risings and can take over wafer 101, support pin 111 and descend and can wafer 101 be loaded on the absorption hot plate 102.
Like Fig. 1, shown in 2,, load reseting sensor 201 in rotation axis 107 outsides in order to prevent to reset after motor from rotating; Each rotation axis 107 drives the synchronous band driven in rotation of transmission mechanism (belt gear) 110 through rotary electric machine 109; After driving wafer 101 and rotating, rotary electric machine 109 all will detect the angle that stops through reseting sensor 201, rises when holding up wafers 101 to prevent to support pin 111; The position is not right, produces to interfere.
As shown in Figure 3, absorption hot plate 102 upper surfaces are circular, square or irregularly shaped, decide according to actual conditions; Absorption hot plate 102 surfaces are scratched has groove 302; Degree of depth 0.2mm-3mm, width 0.5mm-5mm (distortion is as the criterion not take place obviously behind the absorption wafer), groove 302 communicates with the vacuum passage I 303 at absorption hot plate 102 centers; Be used to adsorb fixedly wafer 101, vacuum passage I 303 is communicated with rotation axis 107 interior vacuum passage II 502.Have at least 3 to support pin through hole 301 on the absorption hot plate 102, supporting pin through hole 301 is to support the passage of pin about in the of 111, is used to support the rising and the decline of pin 111, and the loading of wafer is through supporting the realization of getting off on the pin.Vacuum passage I 303 diameter 2-10mm, it is as far as possible little to support the pin through hole, when preventing heat of adsorption plate 102 heating wafers 101, to the influence of temperature homogeneity.
Among the present invention; The size of absorption hot plate 102 and the size shape of wafer to be processed are complementary; The size of absorption hot plate face is less than or equals the area of wafer; Can prevent to adsorb hot plate 102 heat radiation like this, control surface temperature preferably, in the time of also can effectively preventing processing procedure to the pollution of absorption hot plate plate face.
As shown in Figure 4; Absorption hot plate 102 inside are provided with heating plate 401, in the middle of the heating plate 401 heater strip 402 are arranged, for homogeneous heating; Heater strip 402 is evenly coiled; The centre bore of heating plate 401 is a vacuum passage, and by the heat resistant joint ring sealing, the temperature range of absorption hot plate is controlled in 50 ℃ of-200 ℃ of scopes.
Like Fig. 1, shown in 5, rotation axis 107 is the major parts that connect whole device, and rotary electric machine 109 drive transmission devices (belt gear) 110 drive power transmission shaft 107 single unit system is rotated.There are 2 passages the inside of rotation axis 107: vacuum passage II502 and cable passage 501; Because cable and vacuum line can not unconfinedly rotate; Solve this problem through rotary slip ring 104; The inner heater strip cable of heating plate 401 and temperature sensor cables are through rotary slip ring 104 outputs, and the heater strip cable of heating plate 401 inside and temperature sensor cable are realized rotating through rotary slip ring 104.The heater strip cable of the vacuum passage of unitary rotation and heating plate 401 inside and the cable passage of temperature sensor cable all are arranged at rotation axis 107 inside.
The course of work of the present invention is following:
To adsorb hot plate 102 and be heated to assigned temperature, temperature sensor 503 is used for detecting the real time temperature of absorption hot plate 102; Open vacuum line 106, start rotary electric machine 109 and make reset motor; Start and support needle actuating device 103, make support pin 111 be in propradation; Wafer 101 is positioned on the support pin 111, and wafer 101 centers overlap with absorption hot plate 102 centers as far as possible; Start support needle actuating device 103 and make support pin 111 be in the decline state, wafer 101 is loaded on the absorption hot plate 102, heating absorption wafer 101 carries out fabrication process.
Processing procedure finishes, and closes vacuum line 106; Start support needle actuating device 103 and make support pin 111 be in propradation, unloading wafer 101; Starting support needle actuating device 103 makes support pin 111 be in the decline state; Starting rotary electric machine 109 makes reset motor, restarts processing procedure.
Claims (7)
1. the adsorbent equipment of a rotatable heating is characterized in that: this device is provided with the absorption hot plate, supports needle actuating device, rotary slip ring, rotation axis, and the absorption hot plate is installed at the rotation axis top; Wafer is arranged at absorption hot plate top; Rotary slip ring is connected on the rotation axis, is provided with vacuum passage and cable passage in the rotation axis, and the output that supports needle actuating device is connected with the support pin; Support pin and pass the absorption hot plate, support pin and be uniformly distributed in the wafer bottom; Vacuum passage in the rotation axis is connected with vacuum line through rotary slip ring, in said vacuum passage and vacuum line junction, seals through vacuum sealing device; The heat of adsorption intralamellar part is provided with heating plate and heater strip, and heating cable line that heating plate is inner and temperature sensor cable are through rotary slip ring output.
2. according to the adsorbent equipment of the described rotatable heating of claim 1, it is characterized in that: also comprise rotary electric machine and transmission mechanism, the output of rotary electric machine connects rotation axis through transmission mechanism.
3. according to the adsorbent equipment of the described rotatable heating of claim 1, it is characterized in that: load reseting sensor in the rotation axis outside.
4. according to the adsorbent equipment of the described rotatable heating of claim 1; It is characterized in that: absorption hot plate upper surface is circular, square or irregularly shaped; Absorption hot plate surface is scratched has groove; Gash depth 0.2mm-3mm, groove width 0.5mm-5mm, groove communicates with the vacuum passage at absorption hot plate center.
5. according to the adsorbent equipment of the described rotatable heating of claim 1, it is characterized in that: have at least 3 to support the pin through hole on the absorption hot plate, supporting the pin through hole is to support pin passage up and down, supports pin through-hole diameter 2-10mm.
6. according to the adsorbent equipment of the described rotatable heating of claim 1, it is characterized in that: the size of absorption hot plate and the size shape of wafer to be processed are complementary, and the size of absorption hot plate face is less than or equals the size of wafer.
7. according to the adsorbent equipment of the described rotatable heating of claim 1; It is characterized in that: the heat of adsorption intralamellar part is provided with heating plate and heater strip; Heater strip is evenly coiling in heating plate, and the centre bore of heating plate is a vacuum passage, and vacuum passage is through the heat resistant joint ring sealing.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105556171A CN102110634B (en) | 2010-11-22 | 2010-11-22 | Rotary heating adsorption device |
| US13/884,440 US9666457B2 (en) | 2010-11-22 | 2010-12-10 | Adsorption device for rotatable heating |
| PCT/CN2010/079664 WO2012068751A1 (en) | 2010-11-22 | 2010-12-10 | Absorption device for rotatable heating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105556171A CN102110634B (en) | 2010-11-22 | 2010-11-22 | Rotary heating adsorption device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102110634A CN102110634A (en) | 2011-06-29 |
| CN102110634B true CN102110634B (en) | 2012-04-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010105556171A Active CN102110634B (en) | 2010-11-22 | 2010-11-22 | Rotary heating adsorption device |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US9666457B2 (en) |
| CN (1) | CN102110634B (en) |
| WO (1) | WO2012068751A1 (en) |
Families Citing this family (9)
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| US9633875B2 (en) * | 2015-03-13 | 2017-04-25 | Varian Semiconductor Equipment Associates, Inc. | Apparatus for improving temperature uniformity of a workpiece |
| CN106093644A (en) * | 2016-06-14 | 2016-11-09 | 成都迅德科技有限公司 | Novel cable heat run device |
| CN106970109B (en) * | 2017-05-05 | 2024-01-05 | 核工业理化工程研究院 | Equipment for measuring heat conduction property of material |
| CN108257896B (en) * | 2018-01-31 | 2020-04-21 | 吴克足 | Automatic heating device for integrated circuit packaging equipment |
| CN111215295A (en) * | 2018-11-27 | 2020-06-02 | 沈阳芯源微电子设备股份有限公司 | Heating rotary platform device and using method thereof |
| JP7361005B2 (en) * | 2020-09-18 | 2023-10-13 | 株式会社Kokusai Electric | Substrate processing equipment, substrate holder, semiconductor device manufacturing method, and program |
| CN115083988B (en) * | 2022-07-12 | 2023-01-31 | 法特迪精密科技（苏州）有限公司 | Wafer adsorption platform facing probe platform and reducing ring groove and rotating ring groove thereof |
| CN115938995B (en) * | 2023-02-24 | 2023-05-30 | 深圳市新凯来技术有限公司 | Wafer heating device and semiconductor processing equipment |
| CN116190273B (en) * | 2023-03-01 | 2023-11-21 | 苏州联讯仪器股份有限公司 | Adsorption type chip carrying device |
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| JPH02196415A (en) * | 1989-01-25 | 1990-08-03 | Oki Electric Ind Co Ltd | Resist spin-coating apparatus |
| US5536918A (en) * | 1991-08-16 | 1996-07-16 | Tokyo Electron Sagami Kabushiki Kaisha | Heat treatment apparatus utilizing flat heating elements for treating semiconductor wafers |
| JPH0697137A (en) * | 1992-09-14 | 1994-04-08 | Dainippon Screen Mfg Co Ltd | Substrate cleaning equipment |
| KR100246964B1 (en) * | 1996-11-28 | 2000-03-15 | 윤종용 | Spinner for manufacturing semiconductor devices |
| JP4371497B2 (en) * | 1999-10-19 | 2009-11-25 | パナソニック株式会社 | Heating device for bump bonding |
| JP4456234B2 (en) * | 2000-07-04 | 2010-04-28 | パナソニック株式会社 | Bump formation method |
| JP4079212B2 (en) * | 2001-04-17 | 2008-04-23 | 東京エレクトロン株式会社 | Coating film forming apparatus and spin chuck |
| US20030047551A1 (en) * | 2001-09-13 | 2003-03-13 | Worm Steven Lee | Guard heater and pressure chamber assembly including the same |
| JP4030787B2 (en) * | 2002-03-04 | 2008-01-09 | 東京エレクトロン株式会社 | Substrate heating method, substrate heating apparatus, coating and developing apparatus |
| US6722642B1 (en) * | 2002-11-06 | 2004-04-20 | Tokyo Electron Limited | High pressure compatible vacuum chuck for semiconductor wafer including lift mechanism |
| JP2005150468A (en) * | 2003-11-17 | 2005-06-09 | Ebara Corp | Substrate drying apparatus and substrate polishing apparatus |
| CN2847524Y (en) * | 2005-12-05 | 2006-12-13 | 北京中科信电子装备有限公司 | Wafter jack-up device |
| JP4361572B2 (en) * | 2007-02-28 | 2009-11-11 | 株式会社新川 | Bonding apparatus and method |
| CN201171044Y (en) | 2008-01-25 | 2008-12-24 | 沈阳芯源微电子设备有限公司 | Apparatus for adsorbing base plate |
| CN101261284B (en) | 2008-04-14 | 2010-09-29 | 无锡市易控系统工程有限公司 | Wafer adsorption and unloading device capable of longitudinally elevating and horizontally rotating |
| JP5423529B2 (en) * | 2010-03-29 | 2014-02-19 | 東京エレクトロン株式会社 | Film forming apparatus, film forming method, and storage medium |
-
2010
- 2010-11-22 CN CN2010105556171A patent/CN102110634B/en active Active
- 2010-12-10 US US13/884,440 patent/US9666457B2/en active Active
- 2010-12-10 WO PCT/CN2010/079664 patent/WO2012068751A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| WO2012068751A1 (en) | 2012-05-31 |
| US20130228563A1 (en) | 2013-09-05 |
| CN102110634A (en) | 2011-06-29 |
| US9666457B2 (en) | 2017-05-30 |
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Address after: 110168 No. 16 Feiyun Road, Hunnan District, Shenyang City, Liaoning Province Patentee after: Shenyang Core Source Microelectronic Equipment Co., Ltd. Address before: 110168 No. 16 Feiyun Road, Hunnan New District, Shenyang City, Liaoning Province Patentee before: Shenyang Siayuan Electronic Equipment Co., Ltd. |
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