CN111455341A - Physical vapor deposition equipment based on magnetic coupling rotation - Google Patents

Physical vapor deposition equipment based on magnetic coupling rotation Download PDF

Info

Publication number
CN111455341A
CN111455341A CN202010557163.5A CN202010557163A CN111455341A CN 111455341 A CN111455341 A CN 111455341A CN 202010557163 A CN202010557163 A CN 202010557163A CN 111455341 A CN111455341 A CN 111455341A
Authority
CN
China
Prior art keywords
module
driven
ring
rotation
magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202010557163.5A
Other languages
Chinese (zh)
Other versions
CN111455341B (en
Inventor
解文骏
宋维聪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Betone Semiconductor Energy Technology Co ltd
Original Assignee
Shanghai Betone Semiconductor Energy Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Betone Semiconductor Energy Technology Co ltd filed Critical Shanghai Betone Semiconductor Energy Technology Co ltd
Priority to CN202010557163.5A priority Critical patent/CN111455341B/en
Publication of CN111455341A publication Critical patent/CN111455341A/en
Application granted granted Critical
Publication of CN111455341B publication Critical patent/CN111455341B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • C23C14/505Substrate holders for rotation of the substrates
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The invention provides a physical vapor deposition device based on magnetic coupling rotation, which comprises a cavity, a support shaft, a main driving module, a driven module, a main magnetic rotation module, a vacuum insulation bush, a driven magnetic rotation module, a lifting ring, a heater and a shielding ring, wherein the support shaft is arranged on the cavity; the vacuum insulation bushing is positioned in the bottom plate; the main driving module and the driven module are both positioned at the lower part of the bottom plate; the main driving module comprises a driving gear and a motor, and the motor is electrically connected with the driving gear; the driven module comprises a driven gear, and the driven gear is positioned on one side of the driving gear and is meshed with the driving gear; the main magnetic rotation module is positioned below the driven magnetic rotation module; the driven magnetic force rotating module realizes rotation through magnetic coupling with the main magnetic force rotating module; the lifting ring is positioned at the upper part of the driven magnetic force rotating module and is connected with the driven magnetic force rotating module; the heater is fixed on the top of the supporting shaft; the shielding ring is positioned above the heater and used for bearing the wafer. The invention helps to improve the uniformity of the deposited film.

Description

Physical vapor deposition equipment based on magnetic coupling rotation
Technical Field
The present invention relates to a semiconductor integrated circuit manufacturing apparatus, and more particularly, to a physical vapor deposition apparatus based on magnetic coupling rotation.
Background
Physical Vapor Deposition (PVD) is a technique of vaporizing a solid or liquid material into gaseous atoms, molecules, or parts thereof by Physical methods under vacuum, ionizing them into ions, and depositing a thin film having a specific function on the surface of a substrate by low pressure gas or plasma processes. In the physical vapor deposition process, the uniformity of the thickness, stress, sheet resistance and the like of the film can be changed by heating the wafer and adjusting the magnetic field. However, in the process of coating, due to defects in the device structure (for example, due to uneven heating of the heater, uneven gas distribution, etc.), it is difficult to keep the coating conditions of the magnetic field, the heating power, the gas distribution, etc. at various positions in the cavity (mainly corresponding to various regions on the surface of the wafer) completely consistent, so that the thickness, the stress, and the sheet resistance of the film deposited on the surface of the wafer are easily uneven. In the existing physical vapor deposition apparatus, a rotation device is usually provided to rotate the susceptor, thereby rotating the wafer to improve the uniformity of the thin film. However, during the rotation of the base, various power supply lines (such as heating power lines, gas pipelines, etc.) in the base are easy to wind, and poor sealing performance of the bottom of the cavity is easily caused during the rotation (the bottom of the cavity is provided with an opening, a rotating device penetrates through the opening and extends from the outside of the cavity to the inside of the vacuum cavity, or a supporting seat of the base penetrates through the opening and extends from the inside of the cavity to the atmosphere, and after long-term rotation, a sealing part at the opening is easy to deteriorate, so that the sealing performance is reduced). In addition, in the prior art, the opening at the bottom of the cavity is usually sealed by magnetic fluid, so that leakage is easy to cause cavity pollution.
Disclosure of Invention
In view of the above disadvantages of the prior art, an object of the present invention is to provide a physical vapor deposition apparatus based on magnetic coupling rotation, which is used to solve the problems that in the process of driving a wafer to rotate by a base of the physical vapor deposition apparatus in the prior art, a common source line is easily wound, the sealing performance of the apparatus is easily reduced, and the apparatus is easily polluted due to leakage of a magnetic fluid due to the adoption of magnetic fluid sealing.
In order to achieve the above and other related objects, the present invention provides a physical vapor deposition apparatus based on magnetic coupling rotation, including a chamber, a support shaft, a main driving module, a driven module, a main magnetic rotation module, a vacuum insulation bushing, a driven magnetic rotation module, a lift ring, a heater, and a shield ring; the cavity comprises a bottom plate positioned at the bottom; the vacuum insulation bushing is positioned in the bottom plate to isolate the main magnetic rotating module from the driven magnetic rotating module and to isolate a vacuum environment in the cavity from an atmospheric environment together with the bottom plate; the supporting shaft penetrates through the lifting ring, the driven magnetic force rotating module, the driven module, the vacuum insulation bushing and the main magnetic rotating module; the main driving module and the driven module are both positioned at the lower part of the bottom plate; the main driving module comprises a driving gear and a motor, and the motor is electrically connected with the driving gear; the driven module comprises a driven gear, and the driven gear is positioned on one side of the driving gear and is meshed with the driving gear; the main magnetic rotation module is positioned below the driven magnetic rotation module and connected with the driven module so as to rotate under the driving of the driven module, and the main magnetic rotation module comprises a main magnetic unit; the driven magnetic force rotation module is positioned in the cavity and rotates through magnetic coupling with the main magnetic rotation module; the lifting ring is positioned at the upper part of the driven magnetic force rotating module and is connected with the driven magnetic force rotating module; the heater is fixed at the top of the supporting shaft; the shielding ring is positioned above the heater and used for bearing the wafer when the heater is in a descending state.
Optionally, the base plate, the vacuum insulation bushing, the support shaft, the driven module, the main magnetic rotation module, the driven magnetic rotation module, the lift ring, the heater, and the shield ring are coaxial.
Optionally, the driven module further comprises a rotating bearing, a bearing base and a bearing compression ring; the bearing base is connected to the bottom of the main magnetic rotation module, the rotating bearing and the driven gear are sleeved on the bearing base from inside to outside, and the bearing pressing ring is fixed to the bottom of the rotating bearing.
Optionally, the main magnetic unit includes a plurality of magnets, and the main magnetic rotation module further includes a sealing ring, a magnet mounting ring, and a ball; the bearing base is positioned at the bottom of the vacuum insulation bushing; the magnet mounting ring is fixed on the upper surface of the driven gear and is positioned on the periphery of the vacuum insulation bushing; the magnet is adsorbed on the inner surface of the magnet mounting ring; the vacuum insulation bushing is provided with a groove with an upward opening, and the ball is positioned in the groove; the sealing ring is located between the vacuum insulation bushing and the bottom plate.
Optionally, the ball is a silicon nitride ball.
Optionally, the vacuum insulation bushing includes a main body portion and an outer edge portion located in a circumferential direction of the main body portion, the outer edge portion is fixed to the bottom plate, the main body portion is embedded in the bottom plate, the groove is located in the main body portion, and a lower surface of the main body portion protrudes out of a lower surface of the bottom plate.
Optionally, the driven magnetic force rotating module comprises a driven magnetic force rotating ring, a ball guide base, balls and a rotating disc; the bottom of the driven magnetic force rotating ring is embedded into the groove of the vacuum insulation bushing, so that the driven magnetic force rotating ring is tightly matched with the balls in the groove; the ball guide base is positioned above the bottom plate, and the balls are positioned in the guide grooves of the ball guide base; the bottom of the rotating disc is embedded in the guide groove of the ball guide base, so that the rotating disc is tightly matched with the balls in the guide groove.
Optionally, the lift ring is fixed above the rotating disc by a plurality of positioning pins.
Optionally, the inner diameter of the shadow ring is larger than the inner diameter of the lift ring; the height of the shielding ring is 15-18 mm, and the height of the lifting ring is 50-70 mm.
Optionally, the lifting ring includes a bottom surface portion and an annular portion, the annular portion is connected to the bottom surface portion and extends upward from the bottom surface portion, and the annular portion has a plurality of openings.
As described above, the physical vapor deposition equipment based on magnetic coupling rotation of the invention can realize the rotation of the wafer without the rotation of the heater through the magnetic coupling effect through the improved structure design, thereby not only avoiding the winding of the common source line, but also accurately controlling the rotation angle of the wafer and being beneficial to improving the uniformity of the deposited film. The vacuum insulation bushing structure realizes the sealing of the cavity, has the advantages of simple structure, low price, good sealing effect, no leakage and liquid volatilization and the like compared with the magnetic fluid sealing, can effectively avoid the pollution of the cavity, and is beneficial to reducing the production cost.
Drawings
FIG. 1 is a schematic structural diagram of a magnetically coupled rotation-based PVD equipment according to the invention.
FIG. 2 is a schematic cross-sectional view of a magnetically coupled rotation-based PVD apparatus according to the present invention.
Fig. 3 shows an exploded view of the magnetic coupling rotation-based pvd apparatus of the present invention.
Description of the element reference numerals
11-a base plate; 12-a support shaft; 131-a drive gear; 132-a motor; 133-a motor base; 141-driven gear; 142-a rotational bearing; 143-a bearing pedestal; 144-a bearing compression ring; 151-a magnet; 152-vacuum insulation bushing; 1521-a main body portion; 1522-outer edge portion; 153-sealing ring; 154-magnet mounting ring; 155-a ball; 161-driven magnetic rotating ring; 162-ball guide base; 163-a ball; 164-rotating disk; 17-a lift ring; 171-bottom surface portion; 172-an annular portion; 173-an opening; 18-a heater; 19-a shield ring; 20-positioning pin.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 3. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
As shown in fig. 1 to 3, the present invention provides a physical vapor deposition apparatus based on magnetic coupling rotation, which includes a chamber, a supporting shaft 12, a main driving module, a driven module, a main magnetic rotation module, a vacuum insulation bushing 152, a driven magnetic rotation module, a lift ring 17, a heater 18, and a shadow ring 19; the cavity comprises a bottom plate 11 at the bottom; the vacuum insulation bushing 152 is located in the bottom plate 11 to isolate the main magnetic rotary module from the driven magnetic rotary module, and to isolate the vacuum environment in the cavity from the atmospheric environment together with the bottom plate 11; the supporting shaft 12 penetrates through the lifting ring 17, the driven magnetic force rotating module, the driven module, the vacuum insulation bushing 152 and the main magnetic rotating module (extends from the inner part of the cavity to the outer part of the cavity); the main driving module and the driven module are both positioned at the lower part of the bottom plate 11; the main driving module comprises a driving gear 131 and a motor 132, and the motor 132 is electrically connected with the driving gear 131; the driven module comprises a driven gear 141, and the driven gear 141 is positioned at one side of the driving gear 131 and is meshed with the driving gear 131; the main magnetic rotation module is positioned below the driven magnetic rotation module and connected with the driven module so as to rotate under the driving of the driven module, and the main magnetic rotation module comprises a main magnetic unit; the driven magnetic force rotation module is positioned in the cavity and rotates through magnetic coupling with the main magnetic rotation module; the lifting ring 17 is positioned at the upper part of the driven magnetic force rotating module and is connected with the driven magnetic force rotating module; the heater 18 is fixed on the top of the supporting shaft 12; the shadow ring 19 is located above the heater 18 for carrying a wafer when the heater 18 is in a lowered state. Through the improved structural design of the physical vapor deposition equipment based on magnetic coupling rotation, the rotation of the wafer can be realized without the rotation of the heater 18 through the magnetic coupling effect, the winding of a common source line can be avoided, the rotation angle of the wafer can be accurately controlled, and the uniformity of a deposited film is improved. In addition, the cavity is sealed through the vacuum insulation bushing 152 and other structures, compared with the magnetic fluid seal, the magnetic fluid seal has the advantages of simple structure, low price, good sealing effect, no leakage and liquid volatilization and the like, the cavity pollution can be effectively avoided, and the production cost is reduced.
It should be noted that, in order to make the invention more prominent, the whole structure of the cavity is not shown in the drawings of the present specification, but only the bottom plate 11 at the bottom of the cavity is shown, and the cavity may be rectangular column shaped, cylindrical column shaped or other shapes suitable for thin film deposition.
As an example, the heater 18 has a plurality of air holes on the surface, and the pvd apparatus further includes a driving device electrically connected to the support shaft 12 to drive the heater 18 to move up and down by driving the support shaft 12 to move up and down. Various power supply lines, including but not limited to heating power lines, air supply lines, etc., may be embedded in the support shaft 12 to be connected/communicated with the heater 18. Since the base plate 11, the support shaft 12 and the vacuum insulation bushing 152 do not rotate, the problem of wire winding of the source wire due to the rotation of the susceptor in the prior art can be effectively avoided, and the sealing property of the chamber can be maintained in a good state all the time.
By way of example, the base plate 11, the vacuum insulation bushing 152, the support shaft 12, the driven module, the main magnetic rotation module, the driven magnetic rotation module, the lift ring 17, the heater 18, and the shadow ring 19 are coaxial to ensure that the associated modules remain balanced during rotation.
By way of example, the motor 132 is preferably a servo motor to precisely control the angle of rotation as desired. The main driving module further comprises a motor base 133, and the motor base 133 is fixed to the bottom of the bottom plate 11, namely, is located in an atmospheric environment. The driving gear 131 and the driven gear 141 are completely meshed through the support of the motor base 133.
As an example, the driven module further includes a rotation bearing 142, a bearing base 143, and a bearing pressing ring 144; the bearing base 143 is connected to the bottom of the main magnetic rotation module, and the rotating bearing 142 and the driven gear 141 are sleeved on the bearing base 143 from inside to outside, that is, the rotating bearing 142 is sleeved on the bearing base 143, and the driven gear 141 is sleeved on the rotating bearing 142. The bearing pressing ring 144 is fixed to the bottom of the rotation bearing 142 to fix the rotation bearing 142 and the bearing base 143.
As an example, the main magnetic unit includes a plurality of magnets 151, the magnets 151 including, but not limited to, permanent magnets; the main magnetic rotation module further comprises a sealing ring 153, a magnet mounting ring 154 and a ball 155; the bearing base 143 is located at the bottom of the vacuum insulation bushing 152; the magnet mounting ring 154 is fixed on the upper surface of the driven gear 141 and is located at the periphery of the vacuum insulation bushing 152; the magnet 151 is attached to the inner surface of the magnet mounting ring 154, and the magnet 151 and the vacuum insulation bushing 152 have a distance therebetween to ensure that the magnet mounting ring 154 can rotate flexibly; the vacuum insulation bushing 152 has a groove with an opening 173 facing upward, and the ball 155 is located in the groove; the sealing ring 153 is located between the vacuum insulation bushing 152 and the base plate 11.
By way of example, the balls 155 are silicon nitride balls. Compared with the common steel ball commonly used in the prior art, the silicon nitride ball bearing has the advantages of reducing mechanical friction and increasing rotation precision, effectively avoiding the deformation of the ball bearing due to the advantages of lubricity, wear resistance, corrosion resistance, no magnetism, non-conductivity, high temperature resistance and the like of the silicon nitride ball body, ensuring the normal operation of equipment, being beneficial to prolonging the service life of the equipment and improving the production yield.
As an example, the vacuum insulation bushing 152 includes a main body portion 1521 and an outer edge portion 1522 located at a circumference of the main body portion 1521 and connected (preferably integrally connected) to the main body portion 1521, the outer edge portion 1522 is fixed to the bottom plate 11, for example, by a screw (the screw may not penetrate through the bottom plate 11, that is, a height of the screw is smaller than a thickness of the bottom plate 11 to ensure that there is no risk of contact with an atmospheric environment at a fixing position of the screw and the bottom plate), the main body portion 1521 is embedded in the bottom plate 11, the groove is located in the main body portion 1521, and in one example, a lower surface of the main body portion 1521 protrudes from a lower surface of the bottom plate 11, that is, a lower portion of the vacuum insulation bushing 152 protrudes from a surface of the bottom plate 11 to facilitate connection between other structures and the vacuum insulation bushing 152. As an example, the material of the vacuum insulation bushing 152 includes, but is not limited to, engineering plastics such as PEEK, so as to ensure that the vacuum insulation bushing 152 has good wear resistance and high temperature resistance while having good insulation performance, and the insulation performance of the vacuum insulation bushing 152 can improve the magnetic coupling effect of the main magnetic rotation module and the driven magnetic rotation module.
As an example, the driven magnetic force rotation module includes a driven magnetic force rotation ring 161, a ball guide base 162, a ball 163, and a rotation plate 164; the bottom of the driven magnetic rotating ring 161 is embedded into the groove of the vacuum insulation bushing 152, so that the driven magnetic rotating ring 161 is tightly matched with the balls in the groove; the ball guide base 162 is located above the bottom plate 11, and the balls 163 are located in the guide grooves of the ball guide base 162; the bottom of the rotary plate 164 is inserted into the guide groove of the ball guide base 162, so that the rotary plate 164 is closely fitted with the balls 163 in the guide groove. The driven magnetic rotary ring 161 may also be, but is not limited to, a permanent magnet. By way of example, the balls 163 are preferably silicon nitride balls, which further improves the high temperature resistance of the chamber, so that the physical vapor deposition apparatus of the present invention can be used for more types of thin film deposition processes.
As an example, the lifting ring 17 is fixed above the rotating disc 164 by a plurality of positioning pins 20, the number of the positioning pins 20 may be 2 or more (preferably 3 or more), the plurality of positioning pins 20 are evenly distributed along the circumferential direction, a plurality of positioning holes (not shown) are correspondingly formed on the bottom of the lifting ring 17 and the surface of the rotating disc 164, and both ends of the positioning pins 20 are fixed in the positioning holes, thereby fixing the lifting ring 17 above the rotating disc 164.
For example, the inner diameter of the shielding ring 19 is larger than the inner diameter of the lifting ring 17, for example, the inner diameter of the shielding ring 19 is 10 to 20mm larger than the inner diameter of the lifting ring 17, so that the shielding ring 19 can be lifted and fixed by the lifting ring 17 when the heater 18 descends and the shielding ring 19 falls to the surface of the lifting ring 17. For example, in one example, the inner diameter of the shadow ring 19 is 200mm-270mm (including end points, unless otherwise specified, all end points are included in the description of the numerical range), and the inner diameter of the lift ring 17 is 190 mm-250 mm; the height of the shielding ring 19 is 15-18 mm, and the height of the lifting ring 17 is 50-70 mm. The material of the shielding ring 19 includes, but is not limited to, ceramic.
As an example, the lift ring 17 includes a bottom surface portion 171 and an arc portion 172, and the arc portion 172 is connected to the bottom surface portion 171 and extends upward from the bottom surface portion 171. In a further example, the lifting ring 17 is generally bowl-like in structure, i.e., the upper inner diameter of the arc portion is larger than the bottom inner diameter (which may be a straight upper portion and a sloped lower portion). The arc portion 172 has a plurality of openings 173, and the openings 173 may be located at an upper portion (i.e., an upper surface of the openings 173 is flush with an upper surface of the arc portion 172) and/or a lower portion (i.e., the openings 173 are located only on a side of the arc portion 172) of the arc portion 172, or the openings 173 may be further provided on the bottom surface portion 171. The opening 173 is provided to facilitate mounting of other structures and to facilitate processing operations, such as a robot arm or other transfer device can be inserted into the opening 173 on the upper surface of the arcuate portion 172 to move the shadow ring 19, thereby adjusting the position of the wafer.
As an example, the pvd apparatus may further include a thin film measuring device (not shown) located in the chamber, and the thin film measuring device is connected to the motor 132, so that when the thin film measuring device measures the non-uniformity of the thin film on the surface of the wafer, the motor 132 drives the driving gear 131 to rotate and drives the wafer to rotate to a specific angle so that each pitch circle surface of the wafer can experience a completely uniform deposition condition, thereby improving the uniformity of the thin film deposition.
In order to make the technical scheme and advantages of the invention more prominent, the following is an illustrative description of the use of the physical vapor deposition apparatus of the invention in combination with the accompanying drawings.
Specifically, when the wafer needs to be rotated in the thin film deposition process, first, the heater 18 starts to descend (for example, by being driven by the support shaft 12), the shadow ring 19 carries the wafer to be separated from the heater 18, and finally falls on the lift ring 17;
then the motor 132 is started to rotate the driving gear 131 by a specified number of steps, the driving gear 131 drives the driven gear 141 to rotate through meshing transmission, the driven gear 141 drives the magnet mounting ring 154 provided with the magnet 151 to rotate, the driven magnetic force rotating ring 161 rotates along with the rotation under the magnetic force adsorption of the magnet 151, so that the rotating disc 164 is driven to rotate, and the rotating disc 164 drives the lifting ring 17 to carry the wafer to rotate;
after the wafer is rotated to a preset angle, the motor 132 is turned off, the rotation process is stopped, the heater 18 is lifted to jack up the shielding ring 19, the shielding ring 19 carries the wafer to be separated from the lifting ring 17 and falls back to the heater 18, and the film deposition is started again;
if necessary, the above process can be repeated for a plurality of times, for example, 3 times, and each rotation is 120 ° until the whole process is completed after the wafer has rotated one full rotation. Of course, the angle of each rotation and the number of rotation cycles of the wafer may be set in other ways according to the process requirements, and the embodiment is not limited strictly. Through the rotation of the wafer, the surfaces of the wafers in the same pitch circle area can be ensured to be exposed to the same deposition condition, so that the uniformity of the film thickness, the sheet resistance and the stress on each pitch circle of the wafer is improved, and the production yield is improved.
In summary, the present invention provides a physical vapor deposition apparatus based on magnetic coupling rotation, which includes a chamber, a support shaft, a driving module, a driven module, a driving magnetic rotation module, a vacuum insulation bushing, a driven magnetic rotation module, a lift ring, a heater, and a shield ring; the cavity comprises a bottom plate positioned at the bottom; the vacuum insulation bushing is positioned in the bottom plate to isolate the main magnetic rotating module from the driven magnetic rotating module and to isolate a vacuum environment in the cavity from an atmospheric environment together with the bottom plate; the supporting shaft penetrates through the lifting ring, the driven magnetic force rotating module, the driven module, the vacuum insulation bushing and the main magnetic rotating module; the main driving module and the driven module are both positioned at the lower part of the bottom plate; the main driving module comprises a driving gear and a motor, and the motor is electrically connected with the driving gear; the driven module comprises a driven gear, and the driven gear is positioned on one side of the driving gear and is meshed with the driving gear; the main magnetic rotation module is positioned below the driven magnetic rotation module and connected with the driven module so as to rotate under the driving of the driven module, and the main magnetic rotation module comprises a main magnetic unit; the driven magnetic force rotation module is positioned in the cavity and rotates through magnetic coupling with the main magnetic rotation module; the lifting ring is positioned at the upper part of the driven magnetic force rotating module and is connected with the driven magnetic force rotating module; the heater is fixed at the top of the supporting shaft; the shielding ring is positioned above the heater and used for bearing the wafer when the heater is in a descending state. Through the improved structural design of the physical vapor deposition equipment based on magnetic coupling rotation, the rotation of the wafer can be realized without the rotation of a heater through the magnetic coupling effect, the winding of a common source line can be avoided, the rotation angle of the wafer can be accurately controlled, and the uniformity of a deposited film is improved. The vacuum insulation bushing structure realizes the sealing of the cavity, has the advantages of simple structure, low price, good sealing effect, no leakage and liquid volatilization and the like compared with the magnetic fluid sealing, can effectively avoid the pollution of the cavity, and is beneficial to reducing the production cost. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.

Claims (10)

1. A magnetically coupled rotation-based physical vapor deposition apparatus, comprising: the device comprises a cavity, a support shaft, a main driving module, a driven module, a main magnetic rotating module, a vacuum insulation bushing, a driven magnetic rotating module, a lifting ring, a heater and a shielding ring; the cavity comprises a bottom plate positioned at the bottom; the vacuum insulation bushing is positioned in the bottom plate to isolate the main magnetic rotating module from the driven magnetic rotating module and to isolate a vacuum environment in the cavity from an atmospheric environment together with the bottom plate; the supporting shaft penetrates through the lifting ring, the driven magnetic force rotating module, the driven module, the vacuum insulation bushing and the main magnetic rotating module; the main driving module and the driven module are both positioned at the lower part of the bottom plate; the main driving module comprises a driving gear and a motor, and the motor is electrically connected with the driving gear; the driven module comprises a driven gear, and the driven gear is positioned on one side of the driving gear and is meshed with the driving gear; the main magnetic rotation module is positioned below the driven magnetic rotation module and connected with the driven module so as to rotate under the driving of the driven module, and the main magnetic rotation module comprises a main magnetic unit; the driven magnetic force rotation module is positioned in the cavity and rotates through magnetic coupling with the main magnetic rotation module; the lifting ring is positioned at the upper part of the driven magnetic force rotating module and is connected with the driven magnetic force rotating module; the heater is fixed at the top of the supporting shaft; the shielding ring is positioned above the heater and used for bearing the wafer when the heater is in a descending state.
2. The magnetically-coupled rotation-based physical vapor deposition apparatus of claim 1, wherein: the bottom plate, the vacuum insulation bushing, the supporting shaft, the driven module, the main magnetic rotating module, the driven magnetic rotating module, the lifting ring, the heater and the shielding ring are coaxial.
3. The magnetically-coupled rotation-based physical vapor deposition apparatus of claim 2, wherein: the driven module also comprises a rotating bearing, a bearing base and a bearing compression ring; the bearing base is connected to the bottom of the main magnetic rotation module, the rotating bearing and the driven gear are sleeved on the bearing base from inside to outside, and the bearing pressing ring is fixed to the bottom of the rotating bearing.
4. The magnetically-coupled rotation-based physical vapor deposition apparatus of claim 3, wherein: the main magnetic unit comprises a plurality of magnets; the main magnetic rotation module further comprises a sealing ring, a magnet mounting ring and a ball; the bearing base is positioned at the bottom of the vacuum insulation bushing; the magnet mounting ring is fixed on the upper surface of the driven gear and is positioned on the periphery of the vacuum insulation bushing; the magnet is adsorbed on the inner surface of the magnet mounting ring; the vacuum insulation bushing is provided with a groove with an upward opening, and the ball is positioned in the groove; the sealing ring is located between the vacuum insulation bushing and the bottom plate.
5. The magnetically-coupled rotation-based physical vapor deposition apparatus of claim 4, wherein: the ball is a silicon nitride ball.
6. The magnetically-coupled rotation-based physical vapor deposition apparatus of claim 4, wherein: the vacuum insulation bushing comprises a main body part and an outer edge part located in the circumferential direction of the main body part, the outer edge part is fixed with the bottom plate, the main body part is embedded into the bottom plate, the groove is located in the main body part, and the lower surface of the main body part protrudes out of the lower surface of the bottom plate.
7. The magnetically-coupled rotation-based physical vapor deposition apparatus of claim 4, wherein: the driven magnetic force rotating module comprises a driven magnetic force rotating ring, a ball guide base, balls and a rotating disc; the bottom of the driven magnetic force rotating ring is embedded into the groove of the vacuum insulation bushing, so that the driven magnetic force rotating ring is tightly matched with the balls in the groove; the ball guide base is positioned above the bottom plate, and the balls are positioned in the guide grooves of the ball guide base; the bottom of the rotating disc is embedded in the guide groove of the ball guide base, so that the rotating disc is tightly matched with the balls in the guide groove.
8. The magnetically-coupled rotation-based physical vapor deposition apparatus of claim 7, wherein: the lifting ring is fixed above the rotating disc through a plurality of positioning pins.
9. The magnetically-coupled rotation-based physical vapor deposition apparatus of claim 1, wherein: the inner diameter of the shielding ring is larger than that of the lifting ring; the height of the shielding ring is 15-18 mm, and the height of the lifting ring is 50-70 mm.
10. A magnetically-coupled-rotation-based physical vapor deposition apparatus according to any of claims 1 to 9, wherein: the lifting ring comprises a bottom surface part and an annular part, the annular part is connected with the bottom surface part and extends upwards from the bottom surface part, and a plurality of openings are formed in the annular part.
CN202010557163.5A 2020-06-18 2020-06-18 Physical vapor deposition equipment based on magnetic coupling rotation Active CN111455341B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010557163.5A CN111455341B (en) 2020-06-18 2020-06-18 Physical vapor deposition equipment based on magnetic coupling rotation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010557163.5A CN111455341B (en) 2020-06-18 2020-06-18 Physical vapor deposition equipment based on magnetic coupling rotation

Publications (2)

Publication Number Publication Date
CN111455341A true CN111455341A (en) 2020-07-28
CN111455341B CN111455341B (en) 2020-09-08

Family

ID=71678149

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010557163.5A Active CN111455341B (en) 2020-06-18 2020-06-18 Physical vapor deposition equipment based on magnetic coupling rotation

Country Status (1)

Country Link
CN (1) CN111455341B (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112853306A (en) * 2021-01-07 2021-05-28 广东开放大学(广东理工职业学院) Magnetic coupling transmission mechanism for realizing workpiece rotation
CN113774352A (en) * 2021-11-11 2021-12-10 上海陛通半导体能源科技股份有限公司 Vapor deposition equipment capable of reciprocating, rotating and lifting
CN115323339A (en) * 2022-08-01 2022-11-11 厦门金鹭特种合金有限公司 Frock and physical vapor deposition equipment
CN115896738A (en) * 2023-03-10 2023-04-04 上海陛通半导体能源科技股份有限公司 Annular shield and thin film deposition apparatus
CN117467962A (en) * 2023-12-28 2024-01-30 上海陛通半导体能源科技股份有限公司 Thin film deposition apparatus
WO2024169608A1 (en) * 2023-02-17 2024-08-22 盛美半导体设备(上海)股份有限公司 Thin film deposition device

Citations (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS594434A (en) * 1982-06-30 1984-01-11 Matsushita Electric Ind Co Ltd Vapor phase reactor
JPH02103928A (en) * 1988-10-13 1990-04-17 Toshiba Ceramics Co Ltd Vapor growth device
CN1878889A (en) * 2003-09-24 2006-12-13 阿维扎技术公司 Thermal processing system with cross-flow liner
JP2007042846A (en) * 2005-08-03 2007-02-15 Furukawa Co Ltd Hydride vapor phase epitaxy apparatus, method of manufacturing group iii nitride semiconductor substrate, and group iii nitride semiconductor substrate
JP2007525017A (en) * 2003-09-24 2007-08-30 アヴィザ テクノロジー インコーポレイテッド Heat treatment system with cross-flow liner
US20090232810A1 (en) * 2007-12-26 2009-09-17 Elmar Kraus Immunoconjugates targeting cd138 and uses thereof
CN101704452A (en) * 2009-09-03 2010-05-12 东莞宏威数码机械有限公司 Roller device driving mechanism
CN101958264A (en) * 2010-05-06 2011-01-26 东莞宏威数码机械有限公司 Dustless vacuum power transfer unit
JP2013136475A (en) * 2011-12-28 2013-07-11 Jx Nippon Mining & Metals Corp Vapor phase growth apparatus
CN103233210A (en) * 2013-05-20 2013-08-07 吉林大学 Organic metal chemical vapor deposition equipment for high-temperature growth of oxide film
CN103299413A (en) * 2010-12-29 2013-09-11 Oc欧瑞康巴尔斯公司 Vacuum treatment apparatus and a method for manufacturing
CN104882359A (en) * 2014-02-27 2015-09-02 斯克林集团公司 Substrate processing apparatus and substrate processing method
US20150275360A1 (en) * 2014-03-25 2015-10-01 Tokyo Electron Limited Vacuum Processing Apparatus
CN107022754A (en) * 2016-02-02 2017-08-08 东京毅力科创株式会社 Substrate board treatment
CN107686978A (en) * 2016-08-03 2018-02-13 豪泽尔涂层技术有限公司 Equipment for coated substrates
CN108385075A (en) * 2018-05-14 2018-08-10 成都华聚科技有限公司 A kind of realization wafer picks and places and pinpoint rotary heating mechanism with MASK
CN109326537A (en) * 2017-07-31 2019-02-12 Asm知识产权私人控股有限公司 Substrate processing device
KR20190082333A (en) * 2016-12-03 2019-07-09 어플라이드 머티어리얼스, 인코포레이티드 Process kit design for chamber heater and wafer rotation mechanism
CN111065488A (en) * 2017-09-13 2020-04-24 佳能半导体制造设备股份有限公司 Processing device
CN111162025A (en) * 2018-11-07 2020-05-15 东京毅力科创株式会社 Substrate processing apparatus and substrate processing method

Patent Citations (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS594434A (en) * 1982-06-30 1984-01-11 Matsushita Electric Ind Co Ltd Vapor phase reactor
JPH02103928A (en) * 1988-10-13 1990-04-17 Toshiba Ceramics Co Ltd Vapor growth device
CN1878889A (en) * 2003-09-24 2006-12-13 阿维扎技术公司 Thermal processing system with cross-flow liner
JP2007525017A (en) * 2003-09-24 2007-08-30 アヴィザ テクノロジー インコーポレイテッド Heat treatment system with cross-flow liner
JP2007042846A (en) * 2005-08-03 2007-02-15 Furukawa Co Ltd Hydride vapor phase epitaxy apparatus, method of manufacturing group iii nitride semiconductor substrate, and group iii nitride semiconductor substrate
US20090232810A1 (en) * 2007-12-26 2009-09-17 Elmar Kraus Immunoconjugates targeting cd138 and uses thereof
CN101704452A (en) * 2009-09-03 2010-05-12 东莞宏威数码机械有限公司 Roller device driving mechanism
CN101958264A (en) * 2010-05-06 2011-01-26 东莞宏威数码机械有限公司 Dustless vacuum power transfer unit
CN103299413A (en) * 2010-12-29 2013-09-11 Oc欧瑞康巴尔斯公司 Vacuum treatment apparatus and a method for manufacturing
JP2013136475A (en) * 2011-12-28 2013-07-11 Jx Nippon Mining & Metals Corp Vapor phase growth apparatus
CN103233210A (en) * 2013-05-20 2013-08-07 吉林大学 Organic metal chemical vapor deposition equipment for high-temperature growth of oxide film
CN104882359A (en) * 2014-02-27 2015-09-02 斯克林集团公司 Substrate processing apparatus and substrate processing method
US20150275360A1 (en) * 2014-03-25 2015-10-01 Tokyo Electron Limited Vacuum Processing Apparatus
CN107022754A (en) * 2016-02-02 2017-08-08 东京毅力科创株式会社 Substrate board treatment
CN107686978A (en) * 2016-08-03 2018-02-13 豪泽尔涂层技术有限公司 Equipment for coated substrates
KR20190082333A (en) * 2016-12-03 2019-07-09 어플라이드 머티어리얼스, 인코포레이티드 Process kit design for chamber heater and wafer rotation mechanism
CN110062954A (en) * 2016-12-03 2019-07-26 应用材料公司 For chamber internal heater and the processing fitting designs of afer rotates mechanism
CN109326537A (en) * 2017-07-31 2019-02-12 Asm知识产权私人控股有限公司 Substrate processing device
CN111065488A (en) * 2017-09-13 2020-04-24 佳能半导体制造设备股份有限公司 Processing device
CN108385075A (en) * 2018-05-14 2018-08-10 成都华聚科技有限公司 A kind of realization wafer picks and places and pinpoint rotary heating mechanism with MASK
CN111162025A (en) * 2018-11-07 2020-05-15 东京毅力科创株式会社 Substrate processing apparatus and substrate processing method

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112853306A (en) * 2021-01-07 2021-05-28 广东开放大学(广东理工职业学院) Magnetic coupling transmission mechanism for realizing workpiece rotation
CN113774352A (en) * 2021-11-11 2021-12-10 上海陛通半导体能源科技股份有限公司 Vapor deposition equipment capable of reciprocating, rotating and lifting
WO2023082855A1 (en) * 2021-11-11 2023-05-19 上海陛通半导体能源科技股份有限公司 Vapor deposition device capable of rotating and lifting in reciprocating manner
CN115323339A (en) * 2022-08-01 2022-11-11 厦门金鹭特种合金有限公司 Frock and physical vapor deposition equipment
CN115323339B (en) * 2022-08-01 2023-12-05 厦门金鹭特种合金有限公司 Frock and physical vapor deposition equipment
WO2024169608A1 (en) * 2023-02-17 2024-08-22 盛美半导体设备(上海)股份有限公司 Thin film deposition device
CN115896738A (en) * 2023-03-10 2023-04-04 上海陛通半导体能源科技股份有限公司 Annular shield and thin film deposition apparatus
CN117467962A (en) * 2023-12-28 2024-01-30 上海陛通半导体能源科技股份有限公司 Thin film deposition apparatus
CN117467962B (en) * 2023-12-28 2024-03-08 上海陛通半导体能源科技股份有限公司 Thin film deposition apparatus

Also Published As

Publication number Publication date
CN111455341B (en) 2020-09-08

Similar Documents

Publication Publication Date Title
CN111455341B (en) Physical vapor deposition equipment based on magnetic coupling rotation
CN103972014B (en) Plasma reaction chamber electrode gap adjusting device and plasma reaction chamber
KR101453233B1 (en) Substrate processing device
JPH01252770A (en) Apparatus for supporting structure
CN113025976B (en) Physical vapor deposition equipment capable of preventing error sputtering
US20220415702A1 (en) Semiconductor processing chamber with dual-lift mechanism for edge ring elevation management
KR20190074984A (en) Film formation apparatus
CN109841558A (en) Base plate carrying table
US20020094600A1 (en) Substrate processing apparatus and method for manufacturing a semiconductor device employing same
CN218385137U (en) Semiconductor reaction equipment
CN108385075B (en) Rotary heating mechanism for realizing picking, placing and accurate positioning of wafer and MASK
US11361984B2 (en) Substrate processing apparatus
TW202213584A (en) Heater assembly with process gap control for batch processing chambers
CN115613002B (en) Vapor deposition apparatus
CN110875167A (en) Cooling chamber and semiconductor processing equipment
CN110273143B (en) Process chamber and semiconductor processing equipment
KR102508025B1 (en) Substrate disposition apparatus arranged in process chamber and operating method thereof
EP4041935A1 (en) Substrate support unit, and apparatus and method for depositing a layer using the same
CN219547082U (en) Base device, sputtering cavity and physical vapor deposition equipment
JP2007088176A (en) Substrate treating device, and method for manufacturing semiconductor device
JP7548981B2 (en) Substrate Processing Equipment
KR20220012608A (en) Apparatus and method for processing substrate
US20240120233A1 (en) Vacuum processing apparatus
TW202310076A (en) Methods for processing a semiconductor substrate
CN115483085A (en) Device for improving air exhaust uniformity of integrated circuit equipment

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant