CN108370240B - E2类放大器 - Google Patents

E2类放大器 Download PDF

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Publication number
CN108370240B
CN108370240B CN201680072921.6A CN201680072921A CN108370240B CN 108370240 B CN108370240 B CN 108370240B CN 201680072921 A CN201680072921 A CN 201680072921A CN 108370240 B CN108370240 B CN 108370240B
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China
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circuit
fundamental frequency
amplifier
harmonic
impedance
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CN201680072921.6A
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English (en)
Chinese (zh)
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CN108370240A (zh
Inventor
G·I·梅奥
C·E·惠特利
黄方
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Qualcomm Inc
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Qualcomm Inc
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2176—Class E amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B5/00—Near-field transmission systems, e.g. inductive or capacitive transmission systems
    • H04B5/20—Near-field transmission systems, e.g. inductive or capacitive transmission systems characterised by the transmission technique; characterised by the transmission medium
    • H04B5/24—Inductive coupling
    • H04B5/26—Inductive coupling using coils
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B5/00—Near-field transmission systems, e.g. inductive or capacitive transmission systems
    • H04B5/70—Near-field transmission systems, e.g. inductive or capacitive transmission systems specially adapted for specific purposes
    • H04B5/79—Near-field transmission systems, e.g. inductive or capacitive transmission systems specially adapted for specific purposes for data transfer in combination with power transfer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/171—A filter circuit coupled to the output of an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/351—Pulse width modulation being used in an amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/391—Indexing scheme relating to amplifiers the output circuit of an amplifying stage comprising an LC-network
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2171—Class D power amplifiers; Switching amplifiers with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2173—Class D power amplifiers; Switching amplifiers of the bridge type
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B2001/0408—Circuits with power amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Amplifiers (AREA)
  • Microwave Amplifiers (AREA)
CN201680072921.6A 2015-12-14 2016-11-16 E2类放大器 Active CN108370240B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562266747P 2015-12-14 2015-12-14
US62/266,747 2015-12-14
US15/152,660 2016-05-12
US15/152,660 US9929704B2 (en) 2015-12-14 2016-05-12 Class E2 amplifier
PCT/US2016/062131 WO2017105732A1 (en) 2015-12-14 2016-11-16 Class e2 amplifier

Publications (2)

Publication Number Publication Date
CN108370240A CN108370240A (zh) 2018-08-03
CN108370240B true CN108370240B (zh) 2021-11-12

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ID=59020286

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680072921.6A Active CN108370240B (zh) 2015-12-14 2016-11-16 E2类放大器

Country Status (9)

Country Link
US (1) US9929704B2 (enExample)
EP (1) EP3391539B1 (enExample)
JP (1) JP6849682B2 (enExample)
KR (1) KR102632024B1 (enExample)
CN (1) CN108370240B (enExample)
BR (1) BR112018011855A2 (enExample)
CA (1) CA3003882A1 (enExample)
TW (1) TWI685191B (enExample)
WO (1) WO2017105732A1 (enExample)

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* Cited by examiner, † Cited by third party
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US9929704B2 (en) * 2015-12-14 2018-03-27 Qualcomm Incorporated Class E2 amplifier
JP7165355B2 (ja) * 2019-02-19 2022-11-04 株式会社デンソー 電力増幅回路
JP7689975B2 (ja) * 2020-03-06 2025-06-09 ヤンク テクノロジーズ，インコーポレーテッド 自動車センターコンソール無線充電システム
CN112260522B (zh) * 2020-09-03 2022-04-05 西安理工大学 用于mosfet的e2类谐振驱动电路及其调制方法
US11469724B2 (en) * 2020-11-09 2022-10-11 Aira, Inc. Free-boost class-e amplifier
WO2022265728A2 (en) * 2021-04-25 2022-12-22 University Of Southern California Millimeter-wave class ef power amplifier with concurrent harmonic and subharmonic tuning
US12166458B2 (en) * 2021-10-08 2024-12-10 Rachit Joshi Radio frequency power amplifier and method for manufacturing Doherty power amplifier
US12155235B2 (en) 2021-11-29 2024-11-26 Samsung Electronics Co., Ltd. Electronic device including matching circuit for reducing harmonics
US12104967B2 (en) * 2022-02-25 2024-10-01 Wisconsin Alumni Research Foundation Electromechanical force sensor based on extrema degeneracy point with nonlinear response

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US6359513B1 (en) * 2001-01-31 2002-03-19 U.S. Philips Corporation CMOS power amplifier with reduced harmonics and improved efficiency
CN1395364A (zh) * 2001-06-07 2003-02-05 三垦电气株式会社 开关放大器和信号放大方法
CN1479969A (zh) * 2000-10-10 2004-03-03 ���������Ǽ���Э�� E/f类开关功率放大器
JP2008028791A (ja) * 2006-07-24 2008-02-07 Matsushita Electric Ind Co Ltd Ｅ級増幅器およびそれを用いたリーダライタならびに書類管理システム
WO2009060264A1 (en) * 2007-11-08 2009-05-14 Freescale Semiconductor, Inc. Integrated circuit having harmonic termination circuitry
JP2010206420A (ja) * 2009-03-02 2010-09-16 Chiba Univ Ｅｍ級増幅器及びこれを備えた機器
CN104242829A (zh) * 2013-06-03 2014-12-24 天工方案公司 与基于多谐波近似的功率放大器效率相关的电路和方法
CN104604082A (zh) * 2012-05-07 2015-05-06 高通股份有限公司 用于产生用于无线电力传送的信号的推挽驱动器
CN104617678A (zh) * 2008-09-17 2015-05-13 高通股份有限公司 用于无线功率发射的发射器
CN104953965A (zh) * 2008-09-01 2015-09-30 艾利森电话股份有限公司 混合类放大器

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US6359513B1 (en) * 2001-01-31 2002-03-19 U.S. Philips Corporation CMOS power amplifier with reduced harmonics and improved efficiency
CN1395364A (zh) * 2001-06-07 2003-02-05 三垦电气株式会社 开关放大器和信号放大方法
JP2008028791A (ja) * 2006-07-24 2008-02-07 Matsushita Electric Ind Co Ltd Ｅ級増幅器およびそれを用いたリーダライタならびに書類管理システム
WO2009060264A1 (en) * 2007-11-08 2009-05-14 Freescale Semiconductor, Inc. Integrated circuit having harmonic termination circuitry
CN104953965A (zh) * 2008-09-01 2015-09-30 艾利森电话股份有限公司 混合类放大器
CN104617678A (zh) * 2008-09-17 2015-05-13 高通股份有限公司 用于无线功率发射的发射器
JP2010206420A (ja) * 2009-03-02 2010-09-16 Chiba Univ Ｅｍ級増幅器及びこれを備えた機器
CN104604082A (zh) * 2012-05-07 2015-05-06 高通股份有限公司 用于产生用于无线电力传送的信号的推挽驱动器
CN104242829A (zh) * 2013-06-03 2014-12-24 天工方案公司 与基于多谐波近似的功率放大器效率相关的电路和方法

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Also Published As

Publication number Publication date
CN108370240A (zh) 2018-08-03
BR112018011855A2 (pt) 2018-11-27
JP6849682B2 (ja) 2021-03-24
KR20180092980A (ko) 2018-08-20
CA3003882A1 (en) 2017-06-22
US20170170794A1 (en) 2017-06-15
TW201729534A (zh) 2017-08-16
WO2017105732A1 (en) 2017-06-22
KR102632024B1 (ko) 2024-01-31
TWI685191B (zh) 2020-02-11
EP3391539B1 (en) 2022-07-13
EP3391539A1 (en) 2018-10-24
US9929704B2 (en) 2018-03-27
JP2019505112A (ja) 2019-02-21

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