BR112018011855A2 - amplificador de classe e2 - Google Patents

amplificador de classe e2

Info

Publication number
BR112018011855A2
BR112018011855A2 BR112018011855A BR112018011855A BR112018011855A2 BR 112018011855 A2 BR112018011855 A2 BR 112018011855A2 BR 112018011855 A BR112018011855 A BR 112018011855A BR 112018011855 A BR112018011855 A BR 112018011855A BR 112018011855 A2 BR112018011855 A2 BR 112018011855A2
Authority
BR
Brazil
Prior art keywords
signal
switch
fundamental frequency
amplifier
circuit
Prior art date
Application number
BR112018011855A
Other languages
English (en)
Portuguese (pt)
Inventor
Edward Wheatley Charles
Isaac Mayo Gabriel
Huynh Phuong
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of BR112018011855A2 publication Critical patent/BR112018011855A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2176—Class E amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B5/00—Near-field transmission systems, e.g. inductive or capacitive transmission systems
    • H04B5/20—Near-field transmission systems, e.g. inductive or capacitive transmission systems characterised by the transmission technique; characterised by the transmission medium
    • H04B5/24—Inductive coupling
    • H04B5/26—Inductive coupling using coils
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B5/00—Near-field transmission systems, e.g. inductive or capacitive transmission systems
    • H04B5/70—Near-field transmission systems, e.g. inductive or capacitive transmission systems specially adapted for specific purposes
    • H04B5/79—Near-field transmission systems, e.g. inductive or capacitive transmission systems specially adapted for specific purposes for data transfer in combination with power transfer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/171—A filter circuit coupled to the output of an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/351—Pulse width modulation being used in an amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/391—Indexing scheme relating to amplifiers the output circuit of an amplifying stage comprising an LC-network
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2171—Class D power amplifiers; Switching amplifiers with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2173—Class D power amplifiers; Switching amplifiers of the bridge type
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B2001/0408—Circuits with power amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Amplifiers (AREA)
  • Microwave Amplifiers (AREA)
BR112018011855A 2015-12-14 2016-11-16 amplificador de classe e2 BR112018011855A2 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562266747P 2015-12-14 2015-12-14
US15/152,660 US9929704B2 (en) 2015-12-14 2016-05-12 Class E2 amplifier
PCT/US2016/062131 WO2017105732A1 (en) 2015-12-14 2016-11-16 Class e2 amplifier

Publications (1)

Publication Number Publication Date
BR112018011855A2 true BR112018011855A2 (pt) 2018-11-27

Family

ID=59020286

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112018011855A BR112018011855A2 (pt) 2015-12-14 2016-11-16 amplificador de classe e2

Country Status (9)

Country Link
US (1) US9929704B2 (enExample)
EP (1) EP3391539B1 (enExample)
JP (1) JP6849682B2 (enExample)
KR (1) KR102632024B1 (enExample)
CN (1) CN108370240B (enExample)
BR (1) BR112018011855A2 (enExample)
CA (1) CA3003882A1 (enExample)
TW (1) TWI685191B (enExample)
WO (1) WO2017105732A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9929704B2 (en) * 2015-12-14 2018-03-27 Qualcomm Incorporated Class E2 amplifier
JP7165355B2 (ja) * 2019-02-19 2022-11-04 株式会社デンソー 電力増幅回路
JP7689975B2 (ja) * 2020-03-06 2025-06-09 ヤンク テクノロジーズ，インコーポレーテッド 自動車センターコンソール無線充電システム
CN112260522B (zh) * 2020-09-03 2022-04-05 西安理工大学 用于mosfet的e2类谐振驱动电路及其调制方法
US11469724B2 (en) * 2020-11-09 2022-10-11 Aira, Inc. Free-boost class-e amplifier
WO2022265728A2 (en) * 2021-04-25 2022-12-22 University Of Southern California Millimeter-wave class ef power amplifier with concurrent harmonic and subharmonic tuning
US12166458B2 (en) * 2021-10-08 2024-12-10 Rachit Joshi Radio frequency power amplifier and method for manufacturing Doherty power amplifier
US12155235B2 (en) 2021-11-29 2024-11-26 Samsung Electronics Co., Ltd. Electronic device including matching circuit for reducing harmonics
US12104967B2 (en) * 2022-02-25 2024-10-01 Wisconsin Alumni Research Foundation Electromechanical force sensor based on extrema degeneracy point with nonlinear response

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US4717884A (en) * 1986-04-14 1988-01-05 Motorola, Inc. High efficiency RF power amplifier
CN1295865C (zh) * 2000-10-10 2007-01-17 加利福尼亚技术协会 E/f类开关功率放大器
US6359513B1 (en) * 2001-01-31 2002-03-19 U.S. Philips Corporation CMOS power amplifier with reduced harmonics and improved efficiency
CN1248407C (zh) * 2001-06-07 2006-03-29 三垦电气株式会社 开关放大器和信号放大方法
US6552610B1 (en) * 2002-01-15 2003-04-22 Mva.Com Eurotec, B.V. Transmission-line tuned switching power amplifier
US6806767B2 (en) * 2002-07-09 2004-10-19 Anadigics, Inc. Power amplifier with load switching circuit
DE10252146B4 (de) * 2002-11-09 2012-03-29 Hüttinger Elektronik Gmbh + Co. Kg Verfahren zum Erzeugen einer hochfrequenten Wechselspannung sowie Hochfrequenz-Leistungsverstärker dafür
JP2008028791A (ja) * 2006-07-24 2008-02-07 Matsushita Electric Ind Co Ltd Ｅ級増幅器およびそれを用いたリーダライタならびに書類管理システム
JP4743077B2 (ja) * 2006-10-23 2011-08-10 三菱電機株式会社 高周波電力増幅器
WO2009060264A1 (en) 2007-11-08 2009-05-14 Freescale Semiconductor, Inc. Integrated circuit having harmonic termination circuitry
EP2274829B1 (en) 2008-05-05 2012-09-05 Nxp B.V. Efficient linear linc power amplifier
WO2010024746A1 (en) * 2008-09-01 2010-03-04 Telefonaktiebolaget L M Ericsson (Publ) Hybrid class amplifier
CN104953965B (zh) * 2008-09-01 2018-07-24 艾利森电话股份有限公司 混合类放大器
US8532724B2 (en) * 2008-09-17 2013-09-10 Qualcomm Incorporated Transmitters for wireless power transmission
JP5207390B2 (ja) * 2009-03-02 2013-06-12 国立大学法人 千葉大学 Ｅｍ級増幅器及びこれを備えた機器
JP5408616B2 (ja) * 2009-08-31 2014-02-05 国立大学法人電気通信大学 増幅回路
EP2333950B1 (en) * 2009-11-30 2016-06-29 Technische Universiteit Delft Digital power amplifier with I/Q combination
JP5537461B2 (ja) * 2011-02-17 2014-07-02 株式会社東芝 送信器及び送受信器
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JP2012257070A (ja) * 2011-06-09 2012-12-27 Nippon Telegr & Teleph Corp <Ntt> トランスインピーダンスアンプ
JP5759286B2 (ja) * 2011-06-27 2015-08-05 住友電気工業株式会社 スイッチング回路
US8736368B2 (en) * 2011-08-16 2014-05-27 Qualcomm Incorporated Class E amplifier overload detection and prevention
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US9093215B2 (en) 2012-05-07 2015-07-28 Qualcomm Incorporated Push-pull driver for generating a signal for wireless power transfer
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Also Published As

Publication number Publication date
CN108370240A (zh) 2018-08-03
JP6849682B2 (ja) 2021-03-24
KR20180092980A (ko) 2018-08-20
CA3003882A1 (en) 2017-06-22
US20170170794A1 (en) 2017-06-15
TW201729534A (zh) 2017-08-16
WO2017105732A1 (en) 2017-06-22
KR102632024B1 (ko) 2024-01-31
TWI685191B (zh) 2020-02-11
EP3391539B1 (en) 2022-07-13
EP3391539A1 (en) 2018-10-24
US9929704B2 (en) 2018-03-27
CN108370240B (zh) 2021-11-12
JP2019505112A (ja) 2019-02-21

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Legal Events

Date Code Title Description
B11A Dismissal acc. art.33 of ipl - examination not requested within 36 months of filing
B11Y Definitive dismissal - extension of time limit for request of examination expired [chapter 11.1.1 patent gazette]