BR112018011855A2 - amplificador de classe e2 - Google Patents
amplificador de classe e2Info
- Publication number
- BR112018011855A2 BR112018011855A2 BR112018011855A BR112018011855A BR112018011855A2 BR 112018011855 A2 BR112018011855 A2 BR 112018011855A2 BR 112018011855 A BR112018011855 A BR 112018011855A BR 112018011855 A BR112018011855 A BR 112018011855A BR 112018011855 A2 BR112018011855 A2 BR 112018011855A2
- Authority
- BR
- Brazil
- Prior art keywords
- signal
- switch
- fundamental frequency
- amplifier
- circuit
- Prior art date
Links
- 230000009466 transformation Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2176—Class E amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B5/00—Near-field transmission systems, e.g. inductive or capacitive transmission systems
- H04B5/20—Near-field transmission systems, e.g. inductive or capacitive transmission systems characterised by the transmission technique; characterised by the transmission medium
- H04B5/24—Inductive coupling
- H04B5/26—Inductive coupling using coils
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B5/00—Near-field transmission systems, e.g. inductive or capacitive transmission systems
- H04B5/70—Near-field transmission systems, e.g. inductive or capacitive transmission systems specially adapted for specific purposes
- H04B5/79—Near-field transmission systems, e.g. inductive or capacitive transmission systems specially adapted for specific purposes for data transfer in combination with power transfer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/171—A filter circuit coupled to the output of an amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/351—Pulse width modulation being used in an amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/391—Indexing scheme relating to amplifiers the output circuit of an amplifying stage comprising an LC-network
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2171—Class D power amplifiers; Switching amplifiers with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2173—Class D power amplifiers; Switching amplifiers of the bridge type
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
- H04B2001/0408—Circuits with power amplifiers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Amplifiers (AREA)
- Microwave Amplifiers (AREA)
Abstract
trata-se de um amplificador (400) que inclui um circuito amplificador (410) compreendendo um comutador (416), o comutador (416) configurado para fornecer um sinal de saída que responde a um sinal de entrada (415), o sinal de saída compreendendo um primeiro sinal de saída em uma frequência fundamental e um segundo sinal em uma segunda harmônica da frequência fundamental, o sinal de entrada (415) configurado para controlar o comutador (416) de acordo com um valor nominal de 25% quando estacionário, 75% no ciclo, um circuito de filtragem configurado para controlar uma impedância apresentada ao circuito amplificador (410) e um circuito de carga (440), pelo menos uma parte do qual está configurado para combinar com o circuito de filtragem para formar um circuito de transformação de impedância (430) configurado para ser ressonante na segunda harmônica da frequência fundamental.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562266747P | 2015-12-14 | 2015-12-14 | |
US15/152,660 US9929704B2 (en) | 2015-12-14 | 2016-05-12 | Class E2 amplifier |
PCT/US2016/062131 WO2017105732A1 (en) | 2015-12-14 | 2016-11-16 | Class e2 amplifier |
Publications (1)
Publication Number | Publication Date |
---|---|
BR112018011855A2 true BR112018011855A2 (pt) | 2018-11-27 |
Family
ID=59020286
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR112018011855A BR112018011855A2 (pt) | 2015-12-14 | 2016-11-16 | amplificador de classe e2 |
Country Status (9)
Country | Link |
---|---|
US (1) | US9929704B2 (pt) |
EP (1) | EP3391539B1 (pt) |
JP (1) | JP6849682B2 (pt) |
KR (1) | KR102632024B1 (pt) |
CN (1) | CN108370240B (pt) |
BR (1) | BR112018011855A2 (pt) |
CA (1) | CA3003882A1 (pt) |
TW (1) | TWI685191B (pt) |
WO (1) | WO2017105732A1 (pt) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9929704B2 (en) * | 2015-12-14 | 2018-03-27 | Qualcomm Incorporated | Class E2 amplifier |
JP7165355B2 (ja) | 2019-02-19 | 2022-11-04 | 株式会社デンソー | 電力増幅回路 |
CN112260522B (zh) * | 2020-09-03 | 2022-04-05 | 西安理工大学 | 用于mosfet的e2类谐振驱动电路及其调制方法 |
US11469724B2 (en) * | 2020-11-09 | 2022-10-11 | Aira, Inc. | Free-boost class-e amplifier |
WO2022265728A2 (en) * | 2021-04-25 | 2022-12-22 | University Of Southern California | Millimeter-wave class ef power amplifier with concurrent harmonic and subharmonic tuning |
US20230116432A1 (en) * | 2021-10-08 | 2023-04-13 | Rachit Joshi | Radio frequency power amplifier and method for manufacturing doherty power amplifier |
US12104967B2 (en) * | 2022-02-25 | 2024-10-01 | Wisconsin Alumni Research Foundation | Electromechanical force sensor based on extrema degeneracy point with nonlinear response |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
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US3798539A (en) | 1973-02-15 | 1974-03-19 | Magnetic Analysis Corp | Pulse eddy current testing apparatus using pulses having a 25% duty cycle with gating at pulse edges |
US4717884A (en) * | 1986-04-14 | 1988-01-05 | Motorola, Inc. | High efficiency RF power amplifier |
DE60133409T2 (de) * | 2000-10-10 | 2008-07-24 | California Institute Of Technology, Pasadena | Schalt-leistungsverstärker der e/f-klasse |
US6359513B1 (en) * | 2001-01-31 | 2002-03-19 | U.S. Philips Corporation | CMOS power amplifier with reduced harmonics and improved efficiency |
CN1248407C (zh) * | 2001-06-07 | 2006-03-29 | 三垦电气株式会社 | 开关放大器和信号放大方法 |
US6552610B1 (en) * | 2002-01-15 | 2003-04-22 | Mva.Com Eurotec, B.V. | Transmission-line tuned switching power amplifier |
US6806767B2 (en) * | 2002-07-09 | 2004-10-19 | Anadigics, Inc. | Power amplifier with load switching circuit |
DE10252146B4 (de) * | 2002-11-09 | 2012-03-29 | Hüttinger Elektronik Gmbh + Co. Kg | Verfahren zum Erzeugen einer hochfrequenten Wechselspannung sowie Hochfrequenz-Leistungsverstärker dafür |
JP2008028791A (ja) * | 2006-07-24 | 2008-02-07 | Matsushita Electric Ind Co Ltd | E級増幅器およびそれを用いたリーダライタならびに書類管理システム |
JP4743077B2 (ja) * | 2006-10-23 | 2011-08-10 | 三菱電機株式会社 | 高周波電力増幅器 |
WO2009060264A1 (en) | 2007-11-08 | 2009-05-14 | Freescale Semiconductor, Inc. | Integrated circuit having harmonic termination circuitry |
CN102017400B (zh) | 2008-05-05 | 2013-07-31 | Nxp股份有限公司 | 高效线性linc功率放大器 |
CN102138281B (zh) * | 2008-09-01 | 2015-07-08 | 艾利森电话股份有限公司 | 混合类放大器 |
CN104953965B (zh) * | 2008-09-01 | 2018-07-24 | 艾利森电话股份有限公司 | 混合类放大器 |
US8532724B2 (en) * | 2008-09-17 | 2013-09-10 | Qualcomm Incorporated | Transmitters for wireless power transmission |
JP5207390B2 (ja) * | 2009-03-02 | 2013-06-12 | 国立大学法人 千葉大学 | Em級増幅器及びこれを備えた機器 |
JP5408616B2 (ja) * | 2009-08-31 | 2014-02-05 | 国立大学法人電気通信大学 | 増幅回路 |
US20110129037A1 (en) * | 2009-11-30 | 2011-06-02 | Bogdan Staszewski | Digital power amplifier with i/q combination |
JP5537461B2 (ja) * | 2011-02-17 | 2014-07-02 | 株式会社東芝 | 送信器及び送受信器 |
US8310305B1 (en) * | 2011-04-14 | 2012-11-13 | Rockwell Collins, Inc. | Tapered-impedance distributed switching power amplifiers |
JP2012257070A (ja) * | 2011-06-09 | 2012-12-27 | Nippon Telegr & Teleph Corp <Ntt> | トランスインピーダンスアンプ |
JP5759286B2 (ja) * | 2011-06-27 | 2015-08-05 | 住友電気工業株式会社 | スイッチング回路 |
US8736368B2 (en) * | 2011-08-16 | 2014-05-27 | Qualcomm Incorporated | Class E amplifier overload detection and prevention |
GB2510084B (en) * | 2011-11-04 | 2018-02-21 | Skyworks Solutions Inc | Apparatus and methods for power amplifiers |
US9093215B2 (en) * | 2012-05-07 | 2015-07-28 | Qualcomm Incorporated | Push-pull driver for generating a signal for wireless power transfer |
US8773200B2 (en) * | 2012-07-08 | 2014-07-08 | R2 Semiconductor, Inc. | Decoupling circuits for filtering a voltage supply of multiple power amplifiers |
US9602063B2 (en) * | 2013-03-12 | 2017-03-21 | Peregrine Semiconductor Corporation | Variable impedance match and variable harmonic terminations for different modes and frequency bands |
US9024691B2 (en) | 2013-05-17 | 2015-05-05 | Georgia Tech Research Corporation | Adaptive power amplifier and methods of making same |
US9419568B2 (en) * | 2013-06-03 | 2016-08-16 | Skyworks Solutions, Inc. | Circuits and methods related to power amplifier efficiency based on multi-harmonic approximation |
US9929704B2 (en) * | 2015-12-14 | 2018-03-27 | Qualcomm Incorporated | Class E2 amplifier |
KR101899922B1 (ko) * | 2016-04-19 | 2018-09-18 | 한국전자통신연구원 | 저전력 고주파 증폭기 |
KR102467950B1 (ko) * | 2016-12-08 | 2022-11-17 | 한국전자통신연구원 | 통신 장치의 임피던스 정합 회로 |
-
2016
- 2016-05-12 US US15/152,660 patent/US9929704B2/en active Active
- 2016-11-14 TW TW105137005A patent/TWI685191B/zh not_active IP Right Cessation
- 2016-11-16 CN CN201680072921.6A patent/CN108370240B/zh active Active
- 2016-11-16 CA CA3003882A patent/CA3003882A1/en not_active Abandoned
- 2016-11-16 JP JP2018530551A patent/JP6849682B2/ja active Active
- 2016-11-16 WO PCT/US2016/062131 patent/WO2017105732A1/en active Application Filing
- 2016-11-16 KR KR1020187016420A patent/KR102632024B1/ko active IP Right Grant
- 2016-11-16 EP EP16805636.4A patent/EP3391539B1/en active Active
- 2016-11-16 BR BR112018011855A patent/BR112018011855A2/pt not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
CN108370240A (zh) | 2018-08-03 |
KR20180092980A (ko) | 2018-08-20 |
EP3391539A1 (en) | 2018-10-24 |
US20170170794A1 (en) | 2017-06-15 |
US9929704B2 (en) | 2018-03-27 |
TW201729534A (zh) | 2017-08-16 |
JP6849682B2 (ja) | 2021-03-24 |
CA3003882A1 (en) | 2017-06-22 |
EP3391539B1 (en) | 2022-07-13 |
CN108370240B (zh) | 2021-11-12 |
TWI685191B (zh) | 2020-02-11 |
JP2019505112A (ja) | 2019-02-21 |
WO2017105732A1 (en) | 2017-06-22 |
KR102632024B1 (ko) | 2024-01-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
B11A | Dismissal acc. art.33 of ipl - examination not requested within 36 months of filing | ||
B11Y | Definitive dismissal - extension of time limit for request of examination expired [chapter 11.1.1 patent gazette] |