BR112018011855A2 - amplificador de classe e2 - Google Patents

amplificador de classe e2

Info

Publication number
BR112018011855A2
BR112018011855A2 BR112018011855A BR112018011855A BR112018011855A2 BR 112018011855 A2 BR112018011855 A2 BR 112018011855A2 BR 112018011855 A BR112018011855 A BR 112018011855A BR 112018011855 A BR112018011855 A BR 112018011855A BR 112018011855 A2 BR112018011855 A2 BR 112018011855A2
Authority
BR
Brazil
Prior art keywords
signal
switch
fundamental frequency
amplifier
circuit
Prior art date
Application number
BR112018011855A
Other languages
English (en)
Inventor
Edward Wheatley Charles
Isaac Mayo Gabriel
Huynh Phuong
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of BR112018011855A2 publication Critical patent/BR112018011855A2/pt

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217Class D power amplifiers; Switching amplifiers
    • H03F3/2176Class E amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56Modifications of input or output impedances, not otherwise provided for
    • H03F1/565Modifications of input or output impedances, not otherwise provided for using inductive elements
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217Class D power amplifiers; Switching amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02Transmitters
    • H04B1/04Circuits
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B5/00Near-field transmission systems, e.g. inductive or capacitive transmission systems
    • H04B5/20Near-field transmission systems, e.g. inductive or capacitive transmission systems characterised by the transmission technique; characterised by the transmission medium
    • H04B5/24Inductive coupling
    • H04B5/26Inductive coupling using coils
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B5/00Near-field transmission systems, e.g. inductive or capacitive transmission systems
    • H04B5/70Near-field transmission systems, e.g. inductive or capacitive transmission systems specially adapted for specific purposes
    • H04B5/79Near-field transmission systems, e.g. inductive or capacitive transmission systems specially adapted for specific purposes for data transfer in combination with power transfer
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/171A filter circuit coupled to the output of an amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/351Pulse width modulation being used in an amplifying circuit
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/387A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/391Indexing scheme relating to amplifiers the output circuit of an amplifying stage comprising an LC-network
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/451Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217Class D power amplifiers; Switching amplifiers
    • H03F3/2171Class D power amplifiers; Switching amplifiers with field-effect devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217Class D power amplifiers; Switching amplifiers
    • H03F3/2173Class D power amplifiers; Switching amplifiers of the bridge type
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02Transmitters
    • H04B1/04Circuits
    • H04B2001/0408Circuits with power amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Amplifiers (AREA)
  • Microwave Amplifiers (AREA)

Abstract

trata-se de um amplificador (400) que inclui um circuito amplificador (410) compreendendo um comutador (416), o comutador (416) configurado para fornecer um sinal de saída que responde a um sinal de entrada (415), o sinal de saída compreendendo um primeiro sinal de saída em uma frequência fundamental e um segundo sinal em uma segunda harmônica da frequência fundamental, o sinal de entrada (415) configurado para controlar o comutador (416) de acordo com um valor nominal de 25% quando estacionário, 75% no ciclo, um circuito de filtragem configurado para controlar uma impedância apresentada ao circuito amplificador (410) e um circuito de carga (440), pelo menos uma parte do qual está configurado para combinar com o circuito de filtragem para formar um circuito de transformação de impedância (430) configurado para ser ressonante na segunda harmônica da frequência fundamental.
BR112018011855A 2015-12-14 2016-11-16 amplificador de classe e2 BR112018011855A2 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562266747P 2015-12-14 2015-12-14
US15/152,660 US9929704B2 (en) 2015-12-14 2016-05-12 Class E2 amplifier
PCT/US2016/062131 WO2017105732A1 (en) 2015-12-14 2016-11-16 Class e2 amplifier

Publications (1)

Publication Number Publication Date
BR112018011855A2 true BR112018011855A2 (pt) 2018-11-27

Family

ID=59020286

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112018011855A BR112018011855A2 (pt) 2015-12-14 2016-11-16 amplificador de classe e2

Country Status (9)

Country Link
US (1) US9929704B2 (pt)
EP (1) EP3391539B1 (pt)
JP (1) JP6849682B2 (pt)
KR (1) KR102632024B1 (pt)
CN (1) CN108370240B (pt)
BR (1) BR112018011855A2 (pt)
CA (1) CA3003882A1 (pt)
TW (1) TWI685191B (pt)
WO (1) WO2017105732A1 (pt)

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Publication number Priority date Publication date Assignee Title
US9929704B2 (en) * 2015-12-14 2018-03-27 Qualcomm Incorporated Class E2 amplifier
JP7165355B2 (ja) 2019-02-19 2022-11-04 株式会社デンソー 電力増幅回路
CN112260522B (zh) * 2020-09-03 2022-04-05 西安理工大学 用于mosfet的e2类谐振驱动电路及其调制方法
US11469724B2 (en) * 2020-11-09 2022-10-11 Aira, Inc. Free-boost class-e amplifier
WO2022265728A2 (en) * 2021-04-25 2022-12-22 University Of Southern California Millimeter-wave class ef power amplifier with concurrent harmonic and subharmonic tuning
US20230116432A1 (en) * 2021-10-08 2023-04-13 Rachit Joshi Radio frequency power amplifier and method for manufacturing doherty power amplifier
US12104967B2 (en) * 2022-02-25 2024-10-01 Wisconsin Alumni Research Foundation Electromechanical force sensor based on extrema degeneracy point with nonlinear response

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DE60133409T2 (de) * 2000-10-10 2008-07-24 California Institute Of Technology, Pasadena Schalt-leistungsverstärker der e/f-klasse
US6359513B1 (en) * 2001-01-31 2002-03-19 U.S. Philips Corporation CMOS power amplifier with reduced harmonics and improved efficiency
CN1248407C (zh) * 2001-06-07 2006-03-29 三垦电气株式会社 开关放大器和信号放大方法
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CN102138281B (zh) * 2008-09-01 2015-07-08 艾利森电话股份有限公司 混合类放大器
CN104953965B (zh) * 2008-09-01 2018-07-24 艾利森电话股份有限公司 混合类放大器
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JP5207390B2 (ja) * 2009-03-02 2013-06-12 国立大学法人 千葉大学 Em級増幅器及びこれを備えた機器
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Also Published As

Publication number Publication date
CN108370240A (zh) 2018-08-03
KR20180092980A (ko) 2018-08-20
EP3391539A1 (en) 2018-10-24
US20170170794A1 (en) 2017-06-15
US9929704B2 (en) 2018-03-27
TW201729534A (zh) 2017-08-16
JP6849682B2 (ja) 2021-03-24
CA3003882A1 (en) 2017-06-22
EP3391539B1 (en) 2022-07-13
CN108370240B (zh) 2021-11-12
TWI685191B (zh) 2020-02-11
JP2019505112A (ja) 2019-02-21
WO2017105732A1 (en) 2017-06-22
KR102632024B1 (ko) 2024-01-31

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Legal Events

Date Code Title Description
B11A Dismissal acc. art.33 of ipl - examination not requested within 36 months of filing
B11Y Definitive dismissal - extension of time limit for request of examination expired [chapter 11.1.1 patent gazette]