CN108369979A - 电光组件 - Google Patents

电光组件 Download PDF

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CN108369979A
CN108369979A CN201680072902.3A CN201680072902A CN108369979A CN 108369979 A CN108369979 A CN 108369979A CN 201680072902 A CN201680072902 A CN 201680072902A CN 108369979 A CN108369979 A CN 108369979A
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electro
reflecting member
package according
substrate
electrooptic cell
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J·H·维瑟
埃里克·彼得·维尼格
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Cati BV
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Abstract

根据本发明的一方面,提供了一种电光器件,该电光器件包括:具有电端子的电光元件、以及用于支撑所述电光元件的支撑件,所述支撑件包括基板、用于至少电连接至该电光元件的电端子上的至少一个电极、以及反射构件,所述反射构件被布置在该基板表面上、跨该电光元件的周边,以便在使用时经由所述反射构件向或从该电光元件反射电磁辐射。该反射构件被容纳在设置在该基板表面中或上的凹陷中,该基板表面具有覆盖所述凹陷的透明盖。该反射构件是由在使用时处于液态的金属形成的。优点可以包括反射特性得到改进并且光学退化减小。

Description

电光组件
技术领域
本发明涉及制造照明装置和灯具的LED封装体的领域。
背景技术
在现有技术中,已知经由互连技术(例如,倒装芯片的焊料凸块)将LED芯片器件电连接至基板。基板具有例如经由铜接线、通孔等为芯片器件供电的接线。LED器件通过透明树脂进行封装,透明树脂为可以经由电连接器进行电连接的LED提供光学壳体和保护。为了优化光输出,已知为基板提供反射层,反射层反射从LED芯片器件发出的光并且增强器件发出的光的输出耦合。出于这些目的,通常提供银层。然而,这种材料存在一些问题,其由于银迁移、硫化物的形成而发生光学退化。而且,提供较低波长(例如,在500nm和更低波长下的银)的反射率具有挑战性。此外,当前led封装体的材料成本和工艺步骤仍是很大的,并且由于键合工艺产生的热机械应力,工作寿命有限。替代性地,电接线附接到芯片的上部电极部分(与倒装芯片技术相反),进一步产生复杂因素。此外,存在发光器件的光取出效率由于接线和电极的这种暴露部分吸收光而可能降低的风险。
对这两个变型,目的是为反射体的形成提供低成本替代物,其不会存在上述退化并且将反射值保持在最佳水平。而且,目的是提供一种具有可靠的低温键合工艺和在制造和工作寿命期间热机械应力减小的封装体。
JP 2012-156214 A公开了一种发光器件,该发光器件包括作为安装在具有接线的基板上的倒装芯片的发光元件,该发光器件的特征在于,该发光器件具有布置在接线上的绝缘反光层并且具有穿透绝缘反光层达到接线并由此将发光元件连接至接线的凸块。
发明内容
根据本发明的一个方面,提供了一种电光组件,该电光组件包括:具有电端子的至少一个电光元件、以及用于支撑所述电光元件的支撑件,所述支撑件包括基板、用于电连接至该电光元件的电端子上的至少一个电极、以及反射构件,所述反射构件以与该电光元件光学对应的方式被布置在该基板表面上,以便在使用时经由所述反射构件向或从该电光元件反射电磁辐射。该反射构件被容纳在设置在该基板表面中或上的凹陷中,该基板表面具有覆盖所述凹陷的透明盖。该反射构件是由在使用时处于液态的金属形成的。优点可以包括反射特性得到改进并且光学退化减小。可以通过控制盖或基板的几何形状来设计凹陷,使得当沉积时通过封装反射构件来形成凹陷。替代性地,凹陷可以被特别设计,并且反射构件可以以固态或液态插入如此形成的凹陷中。
根据本发明的进一步方面,提供了一种用于制造电光器件的工艺,该工艺包括:提供包括基板的支撑件和具有一个或多个电端子的电光元件的步骤;在所述基板上设置电极以用于电连接至该电光元件的所述端子之一上的步骤、将反射构件在该基板表面上布置在设置在该基板表面中或上的凹陷中的步骤;将该电光元件相对于该反射构件放置以便在使用时经由所述反射构件向或从该电光元件反射电磁辐射的步骤;其中,该反射构件是由在使用时处于液态的金属形成的;以及提供覆盖所述凹陷的透明盖的步骤,所述凹陷容纳该反射构件。
优点可以包括反射特性得到改进并且光学退化减小。进一步的优点可以包括由于更好的芯片裸片(die)连接的热机械应力管理从而减少了工艺步骤的数量并降低了制造工艺和工作寿命中的故障风险。
附图说明
图1示出了根据本发明的第一实施例的示意性截面视图;
图2示出了根据本发明的第二实施例的示意性截面视图;
图3示出了根据本发明的第三实施例的示意性截面视图;
图4示出了根据本发明的第四实施例的示意性截面视图;
图5示出了根据本发明的第五实施例的示意性截面视图;
图6示出了根据本发明的第六实施例的示意性截面视图;
图7示出了根据本发明的第七实施例的示意性截面视图;
图8示出了根据本发明的第八实施例的示意性截面视图;
图9a、图9b示出了根据本发明的第九实施例的示意性截面视图;
图10示出了根据本发明的第十实施例的示意性截面视图。
具体实施方式
除非另外定义,否则当阅读说明书和附图的文字时,本文中所使用的所有术语(包括技术和科技术语)都具有本发明所属领域的普通技术人员通常所理解的相同含义。应进一步理解的是,在常用词典中定义的术语应被解释为具有与其在相关技术领域的背景下的含义相一致的含义,并且不会在理想化的或过度正式的意义上进行解释,除非本文中明确地如此定义。在一些情况下,可能忽略了对众所周知的器件和方法的详细描述,以便不使对本发明系统的方法的描述模糊。术语“和/或”包括相关联的所列项中的一项或多项的任一项和所有组合。应进一步理解的是,术语“包括(comprises)”和/或“包括(comprising)”具体说明所陈述特征的存在,但不排除存在或添加一个或多个其他特征。本文所提及的全部出版物、专利申请、专利和其他参考文献通过援引以其全文并入本文。在有冲突的情况下,将以本说明书(包括定义)为准。
在整个本申请中,用于在电光组件中提供反射镜的任何装置(该组件可以是LED、OLED或电光转换二极管,诸如在使用时是液态的太阳能电池)可能适用于实施本发明,具体如以下进一步阐明的。反射镜的功能是将光取出并引导出组件,并在(多个)LED芯片和基板之间建立电互连。反射镜是通过使用液体或具有导电特性和反射特性的液态材料(例如液态金属)(例如包含镓和/或铟的共晶混合物)或具有在使用时(例如,在大约80摄氏度或更低的熔化温度的情况下)变为液态的特性的另一种金属混合物来建立的。在使用中,反射镜在凹陷中由弯月面形成,该弯月面由液体形成。本发明提供了一种低温芯片键合方法,用于范围从无基板封装到灯具上的直接芯片组件的各种led封装解决方案。
该概念可以为以下led封装问题提供解决方案:
·银反射镜光学退化(例如,银迁移、形成硫化银)
·热界面性能降低和变化(例如,上片空洞)
·由于热机械应力而引起的芯片大小限制和几何限制
·在较低波长下的反射率下降(例如,银在500nm和更低波长下)
·由于材料和工艺步骤而引起的高封装成本。
·没有为拆卸并回收而设计。
这种概念的进一步优点可以是:
·由于零件和工艺步骤数量的减少,所以成本低。
·可靠性得到改进,因为减少的零件数量、低温键合工艺以及在工作寿命和制造期间较低的热机械应力。
·客户订单分离点(CODP)前移,使用裸片而不是已封装芯片。
·由于低温键合工艺而可能产生灯具上芯片(COL)。
·去除了供应链步骤。
·形状和大小自由并且芯片和封装体具有柔性。
参照这些附图在下文中更全面地描述本发明,在附图中示出了本发明的实施例。然而,本发明可以实施为许多不同的形式,而不应被解释为限于本文中给出的实施例。而是,提供这些实施例使得本公开将是完全的和完整的,并且将完全地将本发明的范围传达给本领域技术人员。示例性实施例的描述旨在通过结合附图阅读,附图应被认为是整个书面说明书的一部分。在附图中,为了清楚,可能放大了系统、部件、层和区域的大小和相对大小。参照本发明的可能理想化结构和/或中间结构的示意图描述实施例。
现在参考图1,示出了根据本发明的第一实施例的示意性截面视图。更详细地,已封装的发光二极管(LED)组件10被描绘成具有单个或多个LED芯片1。LED包括在裸片1上的发光层11(进一步包括例如光转换层,诸如磷层),该裸片经由形成电端子的凸块13而安装在基板2上。许多替代方案在这里是可能的。组件10被完全覆盖所述电光元件1的透明盖构件5密封为封装体。电光元件1、特别是倒装芯片LED裸片经由所述凸块13连接至用于电连接至电光元件1的电端子13的电极14。反射构件4被设置在基板表面上。反射体4覆盖该表面的大部分,特别是至少跨周边围绕电光元件。因此在使用时,可以经由所述反射构件4向或从电光元件反射电磁辐射。
倒装芯片1连接至电极14,该电极设置在基板2的上表面上、面向所述电光器件1的底部。
在图1中,电极14由带(例如,至少部分地位于反射体层4下面的铜)形成。金属带与以常规方式横穿基板2的通孔结构15相接触。在底侧,即,与LED 1相反,形成了接触垫16。在此实施例中,反射构件4由在使用时处于液态的金属形成。优点是反射镜是自愈性的。并且很少的污染物可以被金属液体轻易地吸收,同时使弯月面保持处于理想形式。因此,反射特性增强。在优选实施例中,可以通过选择合适的金属来进一步增强反射镜4的反射特性。例如,对于低于500nm的波长,共晶镓铟混合物比常规银层具有更好的反射特性。
此外,在此实施例中,反射构件与(多个)电极并与所述电端子处于电接触。以此方式,用于提供改进的电接触的已知方法与液态金属的反射镜功能结合。此外,在此实施例中,容置液态金属的凹陷经由直立阻挡层分离开,该直立阻挡层将该基板表面上的容纳所述反射构件部分的一个或多个凹陷电分离开,这些反射构件部分与两个或更多个电极处于相应的电连接。如果仅提供了单一电接触,则可以省略此阻挡层。例如,通过未经由反射镜层4提供另一连接(见下文)。
图2示出了替代性实施例,其中,通过省略常规带状电极来提供进一步改进。在此实施例中,液体反射镜4可以与通孔结构15直接接触。磷层从裸片1中省略,但是磷材料可以被添加至盖5,从而密封容置液体反射镜4的室。
图3示出了进一步的替代方案,与先前示例相比之下,其中,基板是导电的,例如形成与裸片1处于电连接的至少一个电极。在此示例中,常规带状电极部分2a、2b的基板形成裸片1与包含化学稳定的阻挡层和润湿层(例如,具有Ni阻挡层和限定液体反射镜的润湿特性的Au层的Cu带)的适当金属化层之间的互连。部分2a、2b与相应的液体反射镜部分4a、4b直接电连接,这些液体反射镜部分被设置在盖5与相邻的基板部分2a、2b之间的相应凹陷中。这些反射镜部分通过同样分离开基板部分2a、2b的阻挡层3而电分离。
图4示出了电极14a被设置为与单一反射构件4处于电接触、并且另一电极14b经由LED 1上的顶表面接线键合而连接的实施例。组件40被容纳在由基板2、直立壁20和透明盖构件5形成的壳体内。
图5示出了封装体50,其中,LED组件设有覆盖LED 1的扩散盖5。LED具有与对应反射镜部分4a、4b处于直接电接触的凸块14,这些反射镜部分被容纳在基板部分22与盖5之间的凹陷中。反射镜部分4a、4b与通孔结构和外部接触垫处于导电接触。阻挡层3将在基板表面上的容纳所述反射构件部分4a、4b的两个或更多个凹陷电分离。
图6示出了类似于前述组件的‘浴缸形’组件60,其中,提供了盖5,并且在使用时液化的反射镜层4被设置在盖5与基板2之间的相应凹陷中。在此示例中,有利地,在不使用时该反射镜是固态。
图7示出了引线框架组件70,作为图4的接线键合的替代品。在此,中央阻挡层3划分反射镜部分4a、4b。
图8示出了例如5mm信号led类型低功率设计100,具有被设置在填充有起到反射镜作用的液态金属的凹陷2中的芯片、以及与连接器16b处于连接的电极。LED的上部部分可以经由接线键合连接至连接器16a。
图9示出了(用于间接照明或感测的)倒装组件80。图9a示出了截面视图;图9b示出了相应的透视图。反射体4在基板2与透明盖5之间以及在裸片1与电极16a和16b之间形成。
图10示出了进一步替代性实施例。在图10中,展示了基板2和薄的芯片或OLED 1可以具有柔性性质,即,可以以一定曲率弯曲,例如,柔性箔片等。反射镜部分4a、4b可以例如通过柔性透明盖5被设置在箔片2上的凹陷中。因此,在使用中,反射体可以是可模制的,其可以以主动方式或被动方式使用。例如,以主动方式,即,通过形式的主动控制,例如通过致动可适配的反射镜致动器,可以主动改变表面的光反射特性。
虽然在附图和上述描述中详细展示并描述了本发明,但是这样的展示和描述认为是说明展示性的或示例性的,而不是限制性的;本发明不局限于所披露的实施例。此外,技术人员将理解的是,在此使用的术语测试不局限于指定的物理设计,而是可以涵盖可以与芯片裸片互连的所有类型的结构。此外,本发明不限于特定类型的应用,而是可以用在以下各项的(O)Led照明中:汽车前大灯;汽车DRL(日间行车灯);工业照明;户外照明;住宅照明;商业/建筑照明;项目-桌面和高架;汽车后组合灯;信令;汽车(中央高位制动灯);汽车内部;闪光灯;台式监视器;大型显示器、TV;投影仪,皮秒且高度便携;太阳能;工业用途,例如,用于加工用途(例如固化)的基于(O)Led的照明/光照。
通过附图、披露内容、和所附权利要求的研究中,本领域技术人员在实践所要求保护的本发明时可以理解所披露的实施例的其他变化。在权利要求中,词语“包括”不排除其他的要素或步骤,并且不定冠词“一”或“一个”并不排除多个。单个单元可以满足权利要求中引用的若干项的功能。在相互不同的从属权利要求中引用某些措施的这一单纯事实并不表明不能有利地使用这些措施的组合。例如,在图3中描述的润湿特性可以同样适用于其他实施例。此外,尽管所描述的金属是由镓和铟的共晶混合物形成的,但是这不包括可以应用产生相同功能的其他混合物。显然,这些混合物的进一步添加确实落入所附权利要求的范围内,在权利要求中的任何附图标记不应被解释为限制范围。

Claims (15)

1.一种电光组件,包括:具有电端子的至少一个电光元件、以及用于支撑所述电光元件的支撑件,所述支撑件包括基板、用于电连接至该电光元件的电端子上的至少一个电极、以及反射构件,所述反射构件相对于该电光元件被布置在该基板表面上,以便在使用时经由所述反射构件向或从该电光元件反射电磁辐射;其中,该反射构件被容纳在设置在该基板表面中或上的凹陷中;其中,该反射构件是由在使用时处于液态的金属形成的。
2.根据权利要求1所述的电光组件,其中,该反射构件与该电极并与所述电端子处于电接触。
3.根据权利要求1所述的电光组件,进一步包括将该基板表面上的容纳所述反射构件部分的两个或更多个凹陷电分离的阻挡层,这些反射构件部分与两个或更多个电极处于相应的电连接。
4.根据权利要求1所述的电光组件,其中,透明盖构件覆盖所述凹陷和所述电光元件。
5.根据权利要求4所述的电光组件,其中,所述透明盖构件包括光学转换元件,诸如磷光体、填充物或绝缘体。
6.根据权利要求1所述的电光组件,其中,该反射构件是由包括Ga和In的共晶混合物形成的。
7.根据权利要求1所述的电光组件,其中,该反射构件形成弯月面,该弯月面具有受该凹陷的润湿特性控制的形式。
8.根据权利要求1所述的电光组件,其中,所述基板是柔性的。
9.根据权利要求1所述的电光组件,其中,该反射构件在不使用时处于固态。
10.根据权利要求1所述的电光组件,其中,所述电极被布置在该基板的上表面上、面向所述电光器件的底部。
11.根据权利要求1所述的电光组件,其中,所述电极经通孔结构横穿所述基板。
12.根据权利要求1所述的电光组件,其中,所述电光元件的所述电端子面向所述反射构件。
13.根据权利要求1所述的电光组件,其中,所述支撑件是灯具,并且所述电光器件由所述灯具直接支撑。
14.根据权利要求1所述的电光组件,其中,所述电光元件是LED裸片或OLED。
15.一种用于制造电光器件的工艺,所述工艺包括:
提供包括基板的支撑件和具有一个或多个电端子的电光元件的步骤;
在所述基板上设置电极以用于电连接至该电光元件的所述端子之一上的步骤;
将反射构件在该基板表面上布置在设置在该基板表面中或上的凹陷中的步骤;
将该电光元件相对于该反射构件放置以便在使用时经由所述反射构件向或从该电光元件反射电磁辐射的步骤;其中,该反射构件是由在使用时处于液态的金属形成的;以及
提供覆盖所述凹陷的透明盖的步骤,所述凹陷容纳该反射构件。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112467018A (zh) * 2020-10-20 2021-03-09 深圳市隆利科技股份有限公司 mini-LED/micro-LED面光源及其制造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060066224A1 (en) * 2004-07-30 2006-03-30 Dai Nippon Printing Co., Ltd. Organic functional element, organic EL element, organic semiconductor element, organic TFT element and method for producing the same
CN101666433A (zh) * 2009-08-27 2010-03-10 符建 利用室温液态金属导热的大功率led光源
CN101984510A (zh) * 2010-08-20 2011-03-09 符建 基于液态金属基底的软性连接的led装置
CN102135248A (zh) * 2011-01-23 2011-07-27 符建 基于液态金属散热的螺纹连接结构的大功率led光源
JP2012156214A (ja) * 2011-01-24 2012-08-16 Nichia Chem Ind Ltd 発光装置
CN103311378A (zh) * 2012-03-06 2013-09-18 展晶科技(深圳)有限公司 Led封装结构的制造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3371287A (en) * 1963-03-15 1968-02-27 Rca Corp High power laser incorporating self-healing mirror means
JPH05142487A (ja) * 1991-11-18 1993-06-11 Nippon Telegr & Teleph Corp <Ntt> 自己保持型光スイツチ
JPH06175052A (ja) * 1992-12-11 1994-06-24 Sumitomo Electric Ind Ltd 光スイッチおよび光スイッチアレイ
CA2362106A1 (en) * 2000-11-20 2002-05-20 Universite Laval Surface chemical treatment for liquid gallium or gallium alloy mirrors
TW533446B (en) * 2000-12-22 2003-05-21 Koninkl Philips Electronics Nv Electroluminescent device and a method of manufacturing thereof
JP2003059648A (ja) * 2001-08-10 2003-02-28 Sony Corp 表示装置及びその製造方法
JPWO2008087883A1 (ja) * 2007-01-15 2010-05-06 アルプス電気株式会社 照光装置およびこれを備えた入力装置
US7724349B2 (en) * 2007-05-02 2010-05-25 Asml Netherlands B.V. Device arranged to measure a quantity relating to radiation and lithographic apparatus
US7939945B2 (en) 2008-04-30 2011-05-10 Intel Corporation Electrically conductive fluid interconnects for integrated circuit devices
JP4561870B2 (ja) * 2008-05-14 2010-10-13 株式会社デンソー 電子装置およびその製造方法
JP5659519B2 (ja) * 2009-11-19 2015-01-28 豊田合成株式会社 発光装置、発光装置の製造方法、発光装置の実装方法及び光源装置
US9698563B2 (en) * 2010-11-03 2017-07-04 3M Innovative Properties Company Flexible LED device and method of making
TWI514050B (zh) * 2010-12-06 2015-12-21 Hon Hai Prec Ind Co Ltd 背光膜片及其製造方法與成型設備
WO2013013154A2 (en) * 2011-07-21 2013-01-24 Cree, Inc. Light emitter device packages, components, and methods for improved chemical resistance and related methods
KR101516358B1 (ko) * 2012-03-06 2015-05-04 삼성전자주식회사 발광 장치
JP2014146474A (ja) * 2013-01-28 2014-08-14 National Institute Of Advanced Industrial & Technology 有機el表示装置及びそれに用いるテープ状構造体
JP2015090480A (ja) * 2013-11-07 2015-05-11 株式会社フジクラ レーザモジュール及びレーザ光生成方法
CN103906358A (zh) * 2013-11-26 2014-07-02 番禺得意精密电子工业有限公司 电连接器

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060066224A1 (en) * 2004-07-30 2006-03-30 Dai Nippon Printing Co., Ltd. Organic functional element, organic EL element, organic semiconductor element, organic TFT element and method for producing the same
CN101666433A (zh) * 2009-08-27 2010-03-10 符建 利用室温液态金属导热的大功率led光源
CN101984510A (zh) * 2010-08-20 2011-03-09 符建 基于液态金属基底的软性连接的led装置
CN102135248A (zh) * 2011-01-23 2011-07-27 符建 基于液态金属散热的螺纹连接结构的大功率led光源
JP2012156214A (ja) * 2011-01-24 2012-08-16 Nichia Chem Ind Ltd 発光装置
CN103311378A (zh) * 2012-03-06 2013-09-18 展晶科技(深圳)有限公司 Led封装结构的制造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112467018A (zh) * 2020-10-20 2021-03-09 深圳市隆利科技股份有限公司 mini-LED/micro-LED面光源及其制造方法

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