CN108364997A - A kind of GaN base HEMT device epitaxial structure - Google Patents
A kind of GaN base HEMT device epitaxial structure Download PDFInfo
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- 230000004888 barrier function Effects 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000000926 separation method Methods 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 15
- 229910017083 AlN Inorganic materials 0.000 claims description 14
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000000407 epitaxy Methods 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 claims 31
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 1
- 229910002704 AlGaN Inorganic materials 0.000 abstract description 14
- 230000000694 effects Effects 0.000 abstract description 11
- 238000005036 potential barrier Methods 0.000 abstract description 9
- 230000008901 benefit Effects 0.000 abstract description 3
- 230000005684 electric field Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000002269 spontaneous effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
The present invention relates to a kind of GaN base HEMT device epitaxial structures, including substrate, nucleating layer, buffer layer, codope GaN layer, intrinsic GaN channel layers, AIN separation layers, the codope Al set gradually from bottom to top x Ga 1‑x N barrier layers and GaN cap layers；Wherein, codope GaN layer includes the N-shaped doping GaN epitaxial layer, undoped GaN epitaxial layer and p-type doping GaN epitaxial layer set gradually from top to bottom；Codope Al x Ga 1‑x N barrier layers include N-shaped doping Al from bottom to top successively x Ga 1‑x N epitaxial layers, undoped Al x Ga 1‑x N epitaxial layers and p-type adulterate Al x Ga 1‑x N epitaxial layers, and codope Al x Ga 1‑x The molar content x of Al elements meets 0.2 in N barrier layers<x<0.5.The advantage of the invention is that：The present invention keeps AlGaN potential barrier relatively thin under conditions of high voltagehigh frequency, still is able to obtain the AlGaN/GaN hetero-junctions HEMT devices having compared with strong polarity effect.
Description
Technical field
The invention belongs to semiconductor power electronic device manufacturing field, more particularly to a kind of GaN base HEMT device epitaxy junction
Structure.
Background technology
GaN is as third generation semi-conducting material, due to its broad stopband, high breakdown electric field and good radiation hardness high temperature resistance super
Property, it has also become the hot spot that the modern times are studied in the world.The distinctive polarity effect of GaN material and high electron saturation velocities so that GaN
Base device becomes good microwave power device.Since AlGaN/GaN hetero-junctions HEMT device is reported for the first time, with growth skill
The progress of art, the raising of material property and the improvement of device development technology, the device properties such as output power density carry steadily
It rises.
With wireless telecommunications market rapid advances and traditional military apply lasting follow-up, GaN base HEMT device
Application field is constantly widened, and is gradually developed towards high-voltage high-frequency rate direction.However as the continuous increase of device cut-in voltage,
Big electric field can be generated between grid leak, electronics is tunneling to the surfaces AlGaN from grid, is captured by the surface state between grid leak, causes to consume
Area extends to drain terminal to the greatest extent, forms empty grid, and the high concentration two-dimensional electron gas 2DEG in raceway groove is reduced, and current collapse effect occurs in device
It answers.In addition, in order to improve the frequency characteristic of device, the grid length of device answer it is as small as possible, but with the shortening of grid length, GaN base
HEMT device will appear apparent short-channel effect.Short-channel effect makes the subthreshold current of device increase, threshold voltage shift,
Saturated characteristic degeneration, mutual conductance reduction, frequency characteristic are deteriorated.
In order to improve current collapse and short-channel effect, cap layer, device passivation, field plate can be used, potential barrier thickness is thinned
The technologies such as degree.However the weakening that will certainly lead to polarity effect is thinned in AlGaN potential barrier among these, to reduce high concentration two dimension
Electron gas 2DEG surface densities, reduce the switching speed of device.This contradiction be present in always high voltagehigh frequency GaN base HEMT device it
In.
Invention content
The technical problem to be solved in the present invention is to provide a kind of GaN base HEMT device epitaxial structures, in the item of high voltagehigh frequency
It under part, keeps AlGaN potential barrier relatively thin, still is able to obtain the AlGaN/GaN hetero-junctions HEMT devices having compared with strong polarity effect.
In order to solve the above technical problems, the technical scheme is that：A kind of GaN base HEMT device epitaxial structure, wound
New point is：Including set gradually from bottom to top substrate, nucleating layer, buffer layer, codope GaN layer, intrinsic GaN channel layers,
AIN separation layers, codope Al x Ga 1-x N barrier layers and GaN cap layers；Wherein, codope GaN layer includes setting successively from top to bottom
N-shaped doping GaN epitaxial layer, undoped GaN epitaxial layer and the p-type doping GaN epitaxial layer set；Codope Al x Ga 1-x N barrier layer packets
Include the N-shaped doping Al set gradually from bottom to top x Ga 1-x N epitaxial layers, undoped Al x Ga 1-x N epitaxial layers and p-type adulterate Al x Ga 1- x N epitaxial layers, and codope Al x Ga 1-x The molar content x of Al elements meets 0.2 in N barrier layers< x < 0.5.
Further, the substrate be can III group nitride material of epitaxial growth polarity common substrate material, polarity nitrogen
Change any one of gallium or polarity aluminium nitride, and the common substrate material is appointing in sapphire, silicon, silicon carbide or zinc oxide
It is a kind of.
Further, polar AlN or GaN on substrate is grown under the temperature condition that the nucleating layer is 550-700 DEG C
Island structure, thickness are 5~20nm.
Further, the buffer layer be the polar AlN being grown under 1100-1300 DEG C of temperature condition on nucleating layer or
GaN layer shape structure.
Further, the N-shaped adulterates the thickness of GaN epitaxial layer as 10~50nm, the thickness of undoped GaN epitaxial layer
It is 10~50nm to adulterate the thickness of GaN epitaxial layer for 50~5000nm and p-type；And N-shaped doping GaN epitaxial layer utilizes Si, S
Or Se is doped, electron concentration is 1 × 1015 ~ 1×1020 cm-3；P-type is adulterated GaN epitaxial layer and is carried out using Mg, Be or Zn
Doping, hole concentration are 1 × 1015 ~ 1×1019 cm-3。
Further, the intrinsic GaN channel layers, to be grown in the polarity high resistant GaN in codope GaN layer, thickness
For 5~50nm, polarity high resistant GaN forms the raceway groove of high concentration two-dimensional electron gas with the interface of AlN separation layers again.
Further, the AlN separation layers, the polar AlN that the thickness to be grown on intrinsic GaN channel layers is 1~5nm
Material.
Further, the N-shaped adulterates Al x Ga 1-x The thickness of N epitaxial layers is 2~10nm, undoped Al x Ga 1-x N extensions
The thickness of layer is 5~50nm and p-type adulterates Al x Ga 1-x The thickness of N epitaxial layers is 2~10nm；And N-shaped adulterates Al x Ga 1-x N
Epitaxial layer is doped using Si, S or Se, and electron concentration is 1 × 1015 ~1 × 1020 cm-3；P-type adulterates Al x Ga 1-x N extensions
Layer is doped using Mg, Be or Zn, and hole concentration is 1 × 1015 ~1 × 1019 cm-3。
Further, the GaN cap layers are to be grown in codope A lx G a1-x The pole that thickness on N barrier layers is 1~5nm
Property GaN material.
The advantage of the invention is that：Using codope AlGaN/GaN hetero-junctions HEMT provided by the invention, by GaN
It is adulterated with n doping and p is carried out at the upper and lower interface of AlGaN potential barrier respectively, material internal is made to be formed and spontaneous polarization electric field side
To identical additional electric field, to enhance its polarity effect, improving hetero-junctions, nearby potential barrier acts on the constraint of electronics, increases high
Concentration two-dimensional electron gas（2DEG）Surface density, while foreign atom and carrier being made spatially further to be detached, reduce
The influence of coulomb interaction and impurity scattering between the two, especially effect is very notable in relatively thin AlGaN potential barriers.
Description of the drawings
The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.
Fig. 1 is the structural schematic diagram of GaN base HEMT device epitaxial structure of the present invention.
Fig. 2 is the structural schematic diagram of codope GaN layer in Fig. 1.
Fig. 3 is codope Al in Fig. 1 x Ga 1-x The structural schematic diagram of N barrier layers.
Fig. 4, which is doped epitaxial layer polarized electric field, enhances principle schematic.
Specific implementation mode
The following examples can make professional and technical personnel that the present invention be more fully understood, but therefore not send out this
It is bright to be limited among the embodiment described range.
Embodiment
The present embodiment GaN base HEMT device epitaxial structure, as shown in Figure 1, including the substrate set gradually from bottom to top
101, nucleating layer 102, buffer layer 103, codope GaN layer 104, intrinsic GaN channel layers 105, AIN separation layers 106, codope
Al x Ga 1-x N barrier layers 107 and GaN cap layers 108.
As shown in Fig. 2, for the enlarged section structure of codope GaN layer 104 provided by the invention, including from top to bottom successively
N-shaped doping GaN epitaxial layer 1041, undoped GaN epitaxial layer 1042 and the p-type of setting adulterate GaN epitaxial layer 1043.
As shown in figure 3, being codope Al provided by the invention x Ga 1-x The enlarged section structure of N barrier layers 107, including from
N-shaped on down successively adulterates Al x Ga 1-x N epitaxial layers 1071, undoped Al x Ga 1-x N epitaxial layers 1072 and p-type adulterate Al x Ga 1- x N epitaxial layers 1073, and codope Al x Ga 1-x The molar content x of Al elements meets 0.2 in N barrier layers 107< x < 0.5.
In the present embodiment, 102 thickness of nucleating layer is 10nm, and 103 thickness of buffer layer is 200nm, p-type doped gan layer 1041
Thickness is 20nm, and 1042 thickness of undoped GaN layer is 200nm, and 1043 thickness of N-shaped doped gan layer is 20nm, intrinsic GaN raceway grooves
105 thickness of layer are 50nm, and 106 thickness of AlN separation layers is 2nm, and p-type adulterates Al x Ga 1-x 1071 thickness of N layers is 5nm, undoped
Al x Ga 1-x 1072 thickness of N layers is 20nm, and N-shaped adulterates Al x Ga 1-x 1073 thickness of N layers is 5nm, and 108 thickness of GaN cap layers is 4nm.
The present embodiment, in the specific implementation, substrate 101 are 4 inches of Si substrates, and nucleating layer 102 is polaritycFace (0001)
GaN island random distribution structures, buffer layer 103 are polaritycLayer structure made of face (0001) GaN island structures merge.
N-shaped doping GaN epitaxial layer 1043 is doped using Si in codope GaN layer 104, and the electron concentration of Si doping is
1×1015 ~1 × 1020 cm-3；P-type doping GaN epitaxial layer 1041 is doped using Mg, and the hole concentration of Mg doping is 1
×1015 ~1 × 1019 cm-3。
Intrinsic GaN channel layers 105 are undoped polaritycFace (0001) GaN, with upper layer codope Al x Ga 1-x N barrier layers
107 form hetero-junctions, strong polarized electric field are generated due to spontaneous polarization and doping, in the poly- high concentration of upper interfacial area
2DEG forms conducting channel.
AlN separation layers 106 are inserted into GaN channel layers 105 and codope Al x Ga 1-x Between N barrier layers 107, effectively reduces and close
The disordered chain of gold reduces influence to carrier, and it is interrupted to increase conduction band, improves 2DEG concentration.
Codope Al x Ga 1-x N-shaped adulterates Al in N barrier layers 107 x Ga 1-x N layers 1071 are doped using Si, Si doping
Electron concentration is 1 × 1015 ~1 × 1020 cm-3；P-type adulterates Al x Ga 1-x N layers 1073 are doped using Mg, the sky of Mg doping
Cave a concentration of 1 × 1015 ~1 × 1019 cm-3。
GaN cap layers 108 are grown in codope Al x Ga 1-x On N barrier layers 107, inhibit current collapse, reduces ohm and connect
It gets an electric shock and hinders.
After the above-mentioned GaN base HEMT epitaxial structures with codope hetero-junctions prepare completion, photoetching etc. can be used and carve
Etch tool exposes lower layer GaN or AlGaN layer, and carries out electrode vapor deposition, and the device optimizations technique such as passivation and field plate, final to make
For the AlGaN/GaN hetero-junctions HEMT devices of high quality are gone out, solid base is laid for high voltagehigh frequency semiconductor power device application
Plinth.
The GaN base HEMT epitaxial structures with codope hetero-junctions that the present embodiment is provided, core include double
Doped gan layer 104 and codope Al x Ga 1-x N barrier layers 107.This part is 2DEG caused by solution AlGaN potential barrier is thinned
Surface density declines the key of problem.Its main function is by carrying out p doping and n doping respectively in material upper and lower interface, such as
Shown in Fig. 4, structure and wurtzite structure material spontaneous polarization electric field E0The identical additional electric field E in direction1, enhance its polarity effect,
To increase 2DEG surface densities, caused by grid length is shorter AlGaN potential barrier be thinned and there are cap layer under the premise of, ensure
Device operating frequencies are normal and the promotion of switching speed.
The basic principles and main features and advantages of the present invention of the present invention have been shown and described above.The skill of the industry
Art personnel it should be appreciated that the present invention is not limited to the above embodiments, the above embodiments and description only describe
The principle of the present invention, without departing from the spirit and scope of the present invention, various changes and improvements may be made to the invention, these
Changes and improvements all fall within the protetion scope of the claimed invention.The claimed scope of the invention by appended claims and
Its equivalent thereof.
Claims (9)
1. a kind of GaN base HEMT device epitaxial structure, it is characterised in that：Including set gradually from bottom to top substrate, nucleating layer,
Buffer layer, codope GaN layer, intrinsic GaN channel layers, AIN separation layers, codope Al x Ga 1-x N barrier layers and GaN cap layers；Its
In, codope GaN layer includes N-shaped doping GaN epitaxial layer, undoped GaN epitaxial layer and the p-type doping set gradually from top to bottom
GaN epitaxial layer；Codope Al x Ga 1-x N barrier layers include the N-shaped doping Al set gradually from bottom to top x Ga 1-x N epitaxial layers non-are mixed
Miscellaneous Al x Ga 1-x N epitaxial layers and p-type adulterate Al x Ga 1-x N epitaxial layers, and codope Al x Ga 1-x Al elements mole contains in N barrier layers
It measures x and meets 0.2< x < 0.5.
2. GaN base HEMT device epitaxial structure according to claim 1, it is characterised in that：The substrate is can extension life
Any one of common substrate material, polarity gallium nitride or polarity aluminium nitride of III group nitride material of long polarity, and it is described normal
It is any one of sapphire, silicon, silicon carbide or zinc oxide with substrate material.
3. GaN base HEMT device epitaxial structure according to claim 1, it is characterised in that：The nucleating layer is 550-700
DEG C temperature condition under grow polar AlN or GaN island structures on substrate, thickness is 5~20nm.
4. GaN base HEMT device epitaxial structure according to claim 1, it is characterised in that：The buffer layer is 1100-
The polar AlN or GaN layer shape structure being grown under 1300 DEG C of temperature condition on nucleating layer.
5. GaN base HEMT device epitaxial structure according to claim 1, it is characterised in that：The N-shaped adulterates GaN epitaxy
The thickness of layer is 10~50nm, the thickness of undoped GaN epitaxial layer is 50~5000nm and the thickness of p-type doping GaN epitaxial layer
Degree is 10~50nm；And N-shaped doping GaN epitaxial layer is doped using Si, S or Se, electron concentration is 1 × 1015 ~ 1×
1020 cm-3；P-type doping GaN epitaxial layer is doped using Mg, Be or Zn, and hole concentration is 1 × 1015 ~ 1×1019 cm-3。
6. GaN base HEMT device epitaxial structure according to claim 1, it is characterised in that：The intrinsic GaN channel layers,
To be grown in the polarity high resistant GaN in codope GaN layer, thickness is 5~50nm, polarity high resistant GaN again with AlN separation layers
Interface forms the raceway groove of high concentration two-dimensional electron gas.
7. GaN base HEMT device epitaxial structure according to claim 1, it is characterised in that：The AlN separation layers, make a living
Grow the polar AlN material that the thickness on intrinsic GaN channel layers is 1~5nm.
8. GaN base HEMT device epitaxial structure according to claim 1, it is characterised in that：The N-shaped adulterates Al x Ga 1-x N
The thickness of epitaxial layer is 2~10nm, undoped Al x Ga 1-x The thickness of N epitaxial layers is 5~50nm and p-type adulterates Al x Ga 1-x N
The thickness of epitaxial layer is 2~10nm；And N-shaped adulterates Al x Ga 1-x N epitaxial layers are doped using Si, S or Se, and electron concentration is
1×1015 ~1 × 1020 cm-3；P-type adulterates Al x Ga 1-x N epitaxial layers are doped using Mg, Be or Zn, hole concentration be 1 ×
1015 ~1 × 1019 cm-3。
9. GaN base HEMT device epitaxial structure according to claim 1, it is characterised in that：The GaN cap layers are growth
In codope A lx G a1-x The polar GaN material that thickness on N barrier layers is 1~5nm.
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Cited By (1)
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| CN110379854A (en) * | 2019-07-26 | 2019-10-25 | 同辉电子科技股份有限公司 | A kind of epitaxy of gallium nitride technology suitable for power device |
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Application publication date: 20180803 |