CN110379854A - A kind of epitaxy of gallium nitride technology suitable for power device - Google Patents
A kind of epitaxy of gallium nitride technology suitable for power device Download PDFInfo
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 99
- 238000000407 epitaxy Methods 0.000 title claims abstract description 33
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 24
- 238000005516 engineering process Methods 0.000 title claims abstract description 19
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 53
- 230000033228 biological regulation Effects 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 15
- 238000002161 passivation Methods 0.000 claims abstract description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 5
- 230000003247 decreasing effect Effects 0.000 claims abstract description 4
- 230000004888 barrier function Effects 0.000 claims description 8
- 239000000470 constituent Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 10
- 229910052710 silicon Inorganic materials 0.000 abstract description 10
- 239000010703 silicon Substances 0.000 abstract description 10
- 239000004065 semiconductor Substances 0.000 abstract description 3
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- 239000010410 layer Substances 0.000 description 119
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- 208000037656 Respiratory Sounds Diseases 0.000 description 7
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- 239000013078 crystal Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
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- 150000001721 carbon Chemical group 0.000 description 2
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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Abstract
The present invention relates to a kind of epitaxy of gallium nitride technologies suitable for power device, belong to technical field of semiconductors, epitaxy technology the specific steps are, utilize Metalorganic Chemical Vapor Deposition successively growing AIN nucleating layer on a si substrate, AlGaN stress regulation and control layer, AlGaN resistive formation, heterogenous junction epitaxy layer, GaN cap and Si3N4 passivation layer, it include that Al component is successively successively decreased one group of son regulation layer along the direction of growth in AlGaN stress regulation and control layer, the technology is to the alleviation of existing silicon based gallium nitride material lattice mismatch problems and overcoming with good effect for thermal mismatch problem, the performance of the gallium nitride epitaxial materials prepared on silicon substrate and the yields of subsequent production GaN device can significantly be improved.
Description
Technical field
The invention belongs to technical field of semiconductors more particularly to a kind of epitaxy of gallium nitride technologies suitable for power device.
Background technique
Due to the advantageous characteristic of gallium nitride material itself, forbidden bandwidth is big, critical breakdown strength is high, electron saturation velocities are fast
It is strong etc. with Radiation hardness, power device compared with traditional silicon semiconductor power device, while realizing higher voltage and also
It can guarantee lower conducting resistance, lower quiescent dissipation.The energy damage of about 30%-50% is reduced in conversion process of energy
Consumption, there is a more high conversion efficiency, faster working frequency, so the preparation of high reliability GaN base power device is at present in the world
The hot spot of research.
Based on large scale Si substrate prepare GaN HEMT epitaxial layer when, due between the two lattice mismatch (17%) and heat mistake
It will cause very much epitaxial layer crackle and warpage greatly with (118%), the bigger warpage of substrate dimension and seminess are more serious, so optimization
It is outstanding to the preparation of subsequent GaN HEMT device that epitaxial growth conditions obtain flawless, low warpage, the GaN epitaxial layer of high-crystal quality
Its is important, this is the premise for preparing high reliability GaN power device.
Summary of the invention
To solve problems of the prior art, the present invention provides a kind of epitaxy of gallium nitride suitable for power device
Technology, wherein each step operation is easy, the disadvantage for overcoming existing Si base gallium nitride power device material epitaxial layer angularity big is mentioned
The yield rate of high Si base GaN epitaxial layer.
The technical solution adopted by the present invention is that:
A kind of epitaxy of gallium nitride technology suitable for power device, it is critical that the specific steps of the epitaxy technology
For, using Metalorganic Chemical Vapor Deposition on a si substrate successively growing AIN nucleating layer, AlGaN stress regulation and control layer,
AlGaN resistive formation, heterogenous junction epitaxy layer, GaN cap and Si3N4 passivation layer include in the AlGaN stress regulation and control layer
Al component is successively successively decreased one group of son regulation layer along the direction of growth.
The AlN nucleating layer with a thickness of 18-24nm, the thickness of AlGaN stress regulation and control layer neutron regulation layer is
190-210nm, AlGaN resistive formation with a thickness of 50-62nm, the thickness of heterogenous junction epitaxy layer is greater than 2 μm, the thickness of GaN cap
Degree is 18-22nm, Si3N4Passivation layer with a thickness of 0.8-1.2nm.
The AlGaN stress regulation and control layer includes that four stratons regulate and control layer, and Al constituent content is successively in the described son regulation layer
For 0.96-0.99,0.76-0.80,0.54-0.58,0.20-0.24.
Al group is divided into 8% in the AlGaN resistive formation.
The heterogenous junction epitaxy layer includes GaN channel layer, insert layer, barrier layer.
The beneficial effects of the present invention are: successively growing AIN nucleating layer, AlGaN stress regulation and control layer, AlGaN on a si substrate
Resistive formation, heterogenous junction epitaxy layer, GaN cap and Si3N4Passivation layer, wherein AlGaN stress regulation and control layer can be obviously improved due to
Warpage and crack phenomenon caused by Si and GaN big lattice mismatch and thermal mismatching；AlGaN high resistant is grown above stress regulation and control layer
Layer can reduce internal stress while improving device resistance to pressure, reduce crackle；Heterogenous junction epitaxy layer reduces alloy scattering, mentions
High Two-dimensional electron mobility, to realize the GaN film material of high quality flawless；GaN cap reduces reverse current, inhibits electricity
Pull-in effect is flowed, ohmic contact resistance is reduced；Si3N4Passivation layer forms protective layer to device surface；The technology is to existing silicon substrate
The alleviation of gallium nitride material lattice mismatch issue and overcoming with good effect for thermal mismatch problem can significantly improve silicon lining
The yields of the performance of the gallium nitride epitaxial materials prepared on bottom and subsequent production GaN device.
Detailed description of the invention
Fig. 1 is flow diagram of the invention.
Fig. 2 is the structural schematic diagram of the epitaxial layer of gallium nitride of power device.
Fig. 3 is the X-ray double crystal diffraction scanning figure of Si base GaN HEMT epitaxial wafer.
Fig. 4 is the Raman spectrogram of 5 points of tests on Si base GaN HEMT sample central axes.
In attached drawing, 1, Si substrate, 2, AlN nucleating layer, 3, AlGaN stress regulation and control layer, 4, AlGaN resistive formation, 5, hetero-junctions
Epitaxial layer, 6, GaN cap, 7, Si3N4Passivation layer.
Specific embodiment
The present invention relates to a kind of epitaxy of gallium nitride technologies suitable for power device, it is important to, the epitaxy technology
The specific steps are, using Metalorganic Chemical Vapor Deposition on Si substrate 1 successively growing AIN nucleating layer 2, AlGaN stress
Regulate and control layer 3, AlGaN resistive formation 4, heterogenous junction epitaxy layer 5, GaN cap 6 and SiN passivation layer 7, the AlGaN stress tune
It include one group of son regulation layer that Al component is successively successively decreased along the direction of growth in control layer 3.
With reference to the accompanying drawing and specific embodiment the invention will be further described.
Specific embodiment, as shown in Figs. 1-2, the silicon based gallium nitride of power device from bottom to top successively include Si substrate 1,
AlN nucleating layer 2, AlGaN stress regulation and control layer 3, AlGaNk resistive formation 4, heterogenous junction epitaxy layer 5, GaNk cap 6 and Si3N4It is blunt
Change layer 7.Wherein AlGaN stress regulation and control layer 3 is made of four layers of different component AlGaN, and the epitaxy technology of the structure includes following tool
Body step:
A, substrate is arranged
Select 6 inches of p-type Si (111) substrates for growing GaN HEMT device, using heat abstraction method in MOCVD cavity
High-temperature heat treatment 5min, Si and SiO under atmosphere of hydrogen2It chemically reacts, generates volatilizable SiO, to remove substrate surface
Oxide starts grown buffer layer later.
B, stress regulation and control layer
There are commonly compound substrate, graph substrate, low temperature AI N insertions for GaN epitaxy growth stress regulation and control scheme on Si substrate 1
Layer, AlN (GaN)/AlGaN superlattices and AlGaN buffer layer etc..Although first two scheme can grow thicker GaN epitaxial layer,
But the preparation before epitaxial growth is cumbersome.Low temperature insert layer technology be in order to first introduce compression, can be to avoid subsequent life
Long GaN film crackle, but this layer easily becomes the electric leakage channel of device.Superlattice structure also can effectively introduce compression, but
The source MO need to frequently switch in growth course, be difficult to control and less reproducible.
The present invention realizes the purpose of stress regulation and control using AlGaN buffer layer technique, which can be in AlGaN layer number
It is combined with changing in component, single layer continuous gradation component not only can be used but also the fixations such as three layers or five layers or gradual change Al component can be used
AlGaN buffer layer, technological difficulties are how to optimize AlGaN layer number and component to reach and provide enough precompressed to GaN layer
Stress avoids GaN crackle and warpage in temperature-fall period.
First at 800 DEG C, grown on Si substrate 1 using Metalorganic Chemical Vapor Deposition the AlN of about 20nm at
Stratum nucleare 2, nucleating layer thickness is too thick, is easy three dimensional growth always, it is difficult to two-dimensional growth is gone to, it is too thin, and do not have the work of seed crystal
With subsequent epitaxial layer is not easy to grow, and reaction chamber is warming up to 1150 DEG C later, and successively four layers of growth is the Al group of 200nm thickness
Divide the AlGaN layer of gradual change, the increase of thickness is conducive to reduce stress, but considers from cost and effect, selects the thickness, both reached
Cost factor has been comprehensively considered again to the purpose for reducing stress, and Al component is followed successively by 0.99,0.78,0.56,0.22, Si substrate
Extension GaN on 1, since GaN is adapted to and thermal mismatching is very big with the lattice of Si, when epitaxial growth terminates cooling, GaN will receive pole
Big tensile stress, epitaxial wafer present concave simultaneously be cracked, in AlGaN stress control layer Al component descending processing be due to from
AlN nucleating layer 2 is transitioned into GaN epitaxial layer, by introducing the AlGaN stress control layer of multilayer different component, reaches release stress
Purpose.Entire about 0.8 μm of buffer layer thickness.
Extension GaN on Si substrate 1 is the two of Si substrate 1 since the thermal mismatching of GaN and Si is 118%, GaN contraction rate
Times or more, with growth after temperature reduction, for GaN by great tensile stress, concave is presented in epitaxial wafer, and angularity increases
While epitaxial wafer can be cracked.We are by introducing the previously-introduced compression of multilayer Al GaN stress control layer, epitaxial wafer
Convex is presented, after being further continued for growth GaN, curvature is become much larger, and convex is more serious, when epitaxial wafer growth terminates to be down to room temperature,
Extension plate curvature restores, and GaN film is now in compressive stress state, balances the transformation of convex to concave, and nothing is presented in epitaxial wafer
Warpage lacks crackle state.So having reached release lattice by using the AlGaN stress regulation and control layer 4 of insertion multilayer different component
The purpose of stress caused by mismatch and big thermal mismatching, also solves the phenomenon that face crack.
C, high resistivity layer epitaxy is grown
Being leaked electricity for GaN power device, under OFF state with power output under ON state is to measure the weight of electronic device performance
Want index.Device body material leakage path promotes device breakdown by buffer layer and silicon materials (or the interface AlN/Si)
Voltage main bottleneck is epitaxial buffer layer and substrate (or substrate surface).The present invention is based on improve GaN from epitaxial layer design aspect
The breakdown voltage of Base HEMT device mainly passes through background in the miserable miscellaneous compensation epitaxial film of C to improve the high resistance of HEMT epitaxial layer
Carrier concentration, using the carbon atom in the source MO, use automatic carbon doping process carry out it is miserable it is miscellaneous (the common source Ga for TMGa,
In contain carbon atom), by change epitaxial growth conditions (V/III ratio, chamber pressure, growth rate and temperature) can be changed it is thin
The concentration of carbon being incorporated in film, in a certain range ([C] < 1019) improve concentration of carbon and can promote the breakdown voltage i.e. lifter of device
The OFF state pressure resistance of part.
By growing single-layer or multi-layer GaN or AlGaN layer above stress control layer as resistive formation, improving, device is resistance to
Also play the role of reducing internal stress while pressure, reduce crackle, the Al component of AlGaN resistive formation 4 is designed as 8%, on the layer
Face directly grows GaN epitaxial layer, the AlGaN of setting one layer of 8%Al component of growth first is that can continue to play the role of discharging stress,
It second is considered from technological angle in order to be more advantageous to the growth of GaN layer, multilayer Al GaN growth condition (V/III ratio, chamber pressure
Power, growth rate and temperature) it is different, master-plan thickness is greater than 50nm, which is reducing internal stress, reducing and split
Facilitate to promote device pressure resistance under the premise of line.
D, with the HEMT hetero structure epitaxy layer 5 of Al (In) GaN/GaN/AlN/AlGaN structure
Using TMAl, TMGa, NH3 as the source Al, the source Ga and the source N, H2As carrier gas, based on growing AIN on Si substrate 1 at
After stratum nucleare 2, the AlGaN stress regulation and control layer 3 of four layers of different component with a thickness of 200nm is grown, successively grows AlGaN high resistant later
Layer 4 and greater than 2 μ m thicks hetero structure epitaxy layer 5, thickness increase be conducive to improve device 2DEG (two-dimensional electron gas) it is close
Degree and the breakdown voltage for improving device, but will increase cost, growth thickness is comprehensively considered between 2~2.5 μm, we select to give birth to
2 μm of long thickness, growth temperature are 1050 DEG C, to realize the GaN film material of high quality flawless.
It is inserted into Al (In) GaN below GaN channel layer and forms back barrier layer, then conduction level can be improved, 2DEG is limited
System avoids electronics from overflowing GaN channel layer between two layers of barrier layer, for this HEMT structure of Al (In) GaN/GaN/AlGaN,
Al component will affect device breakdown pressure resistance in back barrier layer, and high Al contents advantageously reduce element leakage, to mention high Al contents
It is formed, compensates the problem of being not easy to be formed uniform high aluminium film since Al atomic mobility is low by the way that In atom is added, but work as Al
When component excessively high (> 10%), two-dimensional hole gas can be formed in the lower interface (In) GaN hetero-junctions GaN/Al, reduce HEMT extension
The electric property of piece.In addition, GaN growth, on Al (In) GaN back barrier layer, if GaN thinner thickness, channel layer can be in pressure
Strain regime, then grow AlGaN top barrier layer just become smaller with GaN channel layer lattice mismatch, piezoelectric polarization effect also with
Decrease, finally then cause 2DEG density decline.Therefore, Al component and GaN layer thickness are flat in design Al (In) GaN back barrier layer
The 2DEG confinement of weighing apparatus and concentration are extremely important.
In order to improve two-dimensional electron gas mobility, we use Al (In) GaN/GaN/AlN/AlGaN structure, are added one layer
AlN insert layer, AlN insert layer can be improved effective band scale of AlGaN potential barrier and GaN channel layer, realize narrow and deep three
Angular Quantum Well enhances the confinement of 2DEG, and 2DEG is inhibited to penetrate into Al (In) GaN alloy, reduces alloy scattering and improves electricity
Transport factor.
F, cap is grown
The GaN cap 6 that 30nm is grown after AlGaN potential barrier growth, plays and reduces reverse current, inhibits electric current
Pull-in effect reduces the effects of ohmic contact resistance, if GaN cap 6 is too thin, easily causes the avalanche of electric current.
G, the growth of passivation layer
Passivation protection layer is formed in device surface deposition medium film, passivation has good effect to inhibition surface state,
Parasitic capacitance will not be introduced and influence high frequency characteristics.We are using 1nm thickness Si3N4Passivation layer, to realize isolation passivation
Effect, using one layer of atomic layer level thickness.
It is tested as shown in figure 3, having carried out X-ray double crystal diffraction to the epitaxial wafer of growth, in figure: I is the contracting of ordinate intensity
It writes, θ is abscissa (theta).Each insert layer interference peaks are respectively in figure, and the peak A corresponds to GaN epitaxial layer, outside the peak G corresponding A lN
Prolong layer, B, C, D, E and 5 peaks F are corresponding in turn to the AlGaN heterogenous junction epitaxy layer 5, Al of 4,4 content gradually variationals of AlGaN resistive formation
Atomicity score be followed successively by 8%, 22%, 56%, 78% and 99%.The wherein AlGaN layer that the atomicity score of Al is 22%
Form the two-dimensional electron gas (2DEG) of HEMT material.Each peak half-breadth is narrow in figure, and the epitaxial material quality grown is relatively high,
Interface is precipitous.
As shown in figure 4, the peak position of each point is overlapped very well in figure, it was demonstrated that the uniformity of epitaxial wafer is relatively good.The sound of Si substrate
Sub- peak E2 (h) position is in 521.18cm-1, signal is stronger；The position GaN phonon peak E2 (h) is 567.02cm-1, with body material GaN
Phonon peak 567.6cm-1Compare, has been displaced 0.58cm-1, it was demonstrated that GaN epitaxial layer receives tensile stress, is calculated lesser
Surface tensile stress 0.1706GPa illustrates that AlGaN buffer layer technique is taken to effectively reduce the stress between Si and GaN, to obtain
To the epitaxial wafer of not crackle.
Hall test separately is carried out to sample, Ohmic contact uses silver-tin alloy, and sample is in N2Atmosphere, alloy at 280 DEG C
1min, it is 279.8 Ω/, mobility 2080cm that test, which obtains square resistance,2/ (Vs), surface density of charge be 1.07 ×
1013cm-2。
The silicon based gallium nitride power device introduced in the present invention is to existing silicon based gallium nitride material lattice mismatch problems
Alleviation overcomes with thermal mismatch problem with good effect, can increase substantially the gallium nitride epitaxial materials prepared on silicon substrate
Performance and yields also by setting resistive formation to realize the high voltage demand of GaN power device be silicon substrate gallium nitride device
Basis is done in the preparation of part, and the step relative ease which is related to, the easy to operate and period is short, is suitble to application
In marketing.
Claims (5)
1. a kind of epitaxy of gallium nitride technology suitable for power device, it is characterised in that: the specific steps of the epitaxy technology
For, using Metalorganic Chemical Vapor Deposition on Si substrate (1) successively growing AIN nucleating layer (2), AlGaN stress regulation and control
Layer (3), AlGaN resistive formation (4), heterogenous junction epitaxy layer (5), GaN cap (6) and Si3N4Passivation layer (7), it is described
It include one group of son regulation layer that Al component is successively successively decreased along the direction of growth in AlGaN stress regulation and control layer (3).
2. a kind of epitaxy of gallium nitride technology suitable for power device according to claim 1, it is characterised in that: described
AlN nucleating layer (2) with a thickness of 18-24nm, the thickness that AlGaN stress regulation and control layer (3) neutron regulates and controls layer is 190-210nm,
AlGaN resistive formation (4) with a thickness of 50-62nm, the thickness of heterogenous junction epitaxy layer (5) is greater than 2 μm, the thickness of GaN cap (6)
For 18-22nm, Si3N4Passivation layer with a thickness of 0.8-1.2nm.
3. a kind of epitaxy of gallium nitride technology suitable for power device according to claim 1, it is characterised in that: described
AlGaN stress regulation and control layer (3) includes that four stratons regulate and control layer, in the described son regulation layer Al constituent content be followed successively by 0.96-0.99,
0.76-0.80,0.54-0.58,0.20-0.24.
4. a kind of epitaxy of gallium nitride technology suitable for power device according to claim 1, it is characterised in that: described
Al group is divided into 8% in AlGaN resistive formation (4).
5. a kind of epitaxy of gallium nitride technology suitable for power device according to claim 1, it is characterised in that: described
Heterogenous junction epitaxy layer (5) includes GaN channel layer, insert layer, barrier layer.
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| CN115842042A (en) * | 2023-02-20 | 2023-03-24 | 江苏能华微电子科技发展有限公司 | Epitaxial layer structure and preparation method and application thereof |
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