CN105047692A - Substrate for high-electron-mobility transistor - Google Patents
Substrate for high-electron-mobility transistor Download PDFInfo
- Publication number
- CN105047692A CN105047692A CN201510315434.5A CN201510315434A CN105047692A CN 105047692 A CN105047692 A CN 105047692A CN 201510315434 A CN201510315434 A CN 201510315434A CN 105047692 A CN105047692 A CN 105047692A
- Authority
- CN
- China
- Prior art keywords
- channel layer
- substrate
- mobility transistor
- layer
- electron mobility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 33
- 230000004888 barrier function Effects 0.000 claims abstract description 15
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 7
- 150000004767 nitrides Chemical class 0.000 claims abstract description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 7
- 239000000203 mixture Substances 0.000 claims abstract description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 17
- 229910002704 AlGaN Inorganic materials 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 230000007547 defect Effects 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 5
- 239000013078 crystal Substances 0.000 abstract description 4
- 230000008569 process Effects 0.000 abstract description 2
- 238000004377 microelectronic Methods 0.000 abstract 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 16
- 229910002601 GaN Inorganic materials 0.000 description 15
- 230000000694 effects Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000012779 reinforcing material Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
The present invention provides a substrate for a high-electron-mobility transistor, comprising a supporting substrate, a high resistance layer at the surface of the supporting substrate, a channel layer at the surface of the high resistance layer, and a barrier layer at the surface of the channel layer, wherein materials of the high resistance layer, the channel layer and the barrier layer are all nitrides, the material of the channel layer is GaN material with a doped element having the concentration ranging from 1*10<15> cm<-3> to 9*10<19> cm<-3>, the doped element is selected from one of As and P, and a mixture thereof. The substrate of the present invention has the advantages that an isoelectronic element, i.e., As or P, is doped in the process of epitaxial growth of a nitride channel layer, so as to improve a micro-electronic structure of the material, in this way, defect density is reduced, lattice integrality is improved, and crystal quality is raised, thereby improving electronic characteristics, such as electronic mobility, of the material, reducing square resistance, and so on.
Description
Technical field
The present invention relates to field of semiconductor materials, particularly relate to a kind of substrate for High Electron Mobility Transistor.
Background technology
The characteristics such as gallium nitride (GaN) has that energy gap is large, electron drift velocity is large, pyroconductivity is high, high pressure resistant, resistance to thermal decomposition, corrosion-resistant and radioresistens irradiation, be particularly suitable for making hyperfrequency, high temperature, high withstand voltage, high power device, being described as is the main representative of " rear silicon device epoch material ".Aluminium gallium nitride alloy/gallium nitride (AlGaN/GaN) High Electron Mobility Transistor (HEMT) microwave device is the important component part in the microwave telecommunication system such as base station, satellite.Its high-power and high efficiency will reduce the volume of device to a great extent, and reduces system difficulty, and high voltage operation characteristic makes system element quantity reduce.
The key of AlGaN/GaNHEMT advantageous characteristic is the two-dimensional electron gas (2DEG) that AlGaN/GaN near interface is formed.The electrical characteristics of 2DEG are if mobility, surface density etc. are not only by there is strong piezoelectricity and spontaneous polarization effects between potential barrier AlGaN layer and channel layer GaN, but also the backing material be subject to owing to lacking heat coupling and Lattice Matching and produce the impact of the aspects such as high density of defects.Transmitting procedure due to charge carrier depends on quality of materials and the characteristic of channel layer GaN sensitively, and therefore the raising of the optimisation technique of channel layer GaN is conducive to the Electronic Performance parameter of HEMT material and the raising of device performance.
Summary of the invention
Technical problem to be solved by this invention is, provides the optimisation technique of a kind of channel layer GaN, can improve the characteristic electron of backing material.
In order to solve the problem, the invention provides a kind of substrate for High Electron Mobility Transistor, comprise support substrates, the resistive formation on support substrates surface, the channel layer on resistive formation surface and the barrier layer of channel layer surface, the material of described resistive formation, channel layer and barrier layer is nitride, and the material of described channel layer is doped chemical concentration is 1 × 10
15cm
-3~ 9 × 10
19cm
-3gaN material, described doped chemical is selected from the one in As and P, and both mixtures.
Optionally, the material of described resistive formation is selected from any one that GaN, Al component is less than in AlGaN and AlGaInN of 15%.
Optionally, the thickness of described channel layer is 2 nanometers to 2 micron.
Optionally, the material of described barrier layer is selected from the one in AlGaN, InGaN and AlGaInN.
Optionally, resilient coating is comprised further between described support substrates and resistive formation.
Optionally, described barrier layer surface comprises cap further.
The invention has the advantages that, electronic elements arsenic or the phosphorus such as to mix in epitaxial growth nitride channel process, to improve the microcosmic electronic structure of material, reduce defect concentration, improve perfection of lattice, improve crystal mass, thus the characteristic electron of raising material is as electron mobility, reduction square surface resistance etc.
Accompanying drawing explanation
It is the structural representation for High Electron Mobility Transistor substrate described in this embodiment shown in accompanying drawing 1.
Embodiment
Elaborate below in conjunction with the embodiment of accompanying drawing to the substrate for High Electron Mobility Transistor provided by the invention.
With reference to shown in accompanying drawing 1 being structural representation for High Electron Mobility Transistor substrate described in this embodiment, comprise the barrier layer 40 on support substrates 10, the resistive formation 20 on support substrates 10 surface, the channel layer 30 on resistive formation 20 surface and channel layer 30 surface.
Described support substrates 10 can be the common Semiconductor substrate such as monocrystalline silicon or sapphire, also can be the nitride such as GaN.The material of described resistive formation 20, channel layer 30 and barrier layer 40 is all nitride.
In order to improve the crystal mass of resistive formation 20 and channel layer 30, between described support substrates 10 and resistive formation 20, comprise resilient coating 50 further.In order to protect barrier layer 40 not oxidized, its surface comprises a cap 60 further.The material of described resilient coating 50 can be the AlN/AlGaN of multilayer alternating growth, and the material of cap 60 can be GaN.
In order to improve the two-dimensional electron gas characteristic between channel layer 30 and barrier layer 40, the Material selec-tion of described channel layer 30 is GaN, and comprises 1 × 10
15cm
-3~ 9 × 10
19cm
-3doped chemical, described doped chemical is selected from the one in As and P, and both mixtures.The thickness of described channel layer 30 is 2 nanometers to 2 micron.Because the outer electronic structure of As with P is consistent with N, it is the electronic elements such as grade of N.N vacancy defect is the main scattering imperfection of GaN material in channel layer 30, Deng mixing of electronic elements As or P, N room can be filled, reduce defect concentration, thus the defect scattering effect of GaN channel layer can be shielded, the perfection of lattice of reinforcing material, improves the crystal mass of material, and then can promote the electrical property of material and corresponding device.
In this embodiment, the material that the material of described resistive formation 20 is selected from described resistive formation be selected from that GaN, Al component is less than in AlGaN and AlGaInN of 15% any one.The material of described barrier layer 40 is selected from the one in AlGaN, InGaN and AlGaInN.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (6)
1. the substrate for High Electron Mobility Transistor, comprise support substrates, the resistive formation on support substrates surface, the channel layer on resistive formation surface and the barrier layer of channel layer surface, the material of described resistive formation, channel layer and barrier layer is nitride, it is characterized in that, the material of described channel layer is doped chemical concentration is 1 × 10
15cm
-3~ 9 × 10
19cm
-3gaN material, described doped chemical is selected from the one in As and P, and both mixtures.
2. the substrate for High Electron Mobility Transistor according to claim 1, is characterized in that, the material of described resistive formation be selected from that GaN, Al component is less than in AlGaN and AlGaInN of 15% any one.
3. the substrate for High Electron Mobility Transistor according to claim 1, is characterized in that, the thickness of described channel layer is 2 nanometers to 2 micron.
4. the substrate for High Electron Mobility Transistor according to claim 1, is characterized in that, the material of described barrier layer is selected from the one in AlGaN, InGaN and AlGaInN.
5. the substrate for High Electron Mobility Transistor according to claim 1, is characterized in that, comprises resilient coating further between described support substrates and resistive formation.
6. the substrate for High Electron Mobility Transistor according to claim 1, is characterized in that, described barrier layer surface comprises cap further.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510315434.5A CN105047692B (en) | 2015-06-10 | 2015-06-10 | substrate for high electron mobility transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510315434.5A CN105047692B (en) | 2015-06-10 | 2015-06-10 | substrate for high electron mobility transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105047692A true CN105047692A (en) | 2015-11-11 |
| CN105047692B CN105047692B (en) | 2018-08-24 |
Family
ID=54454090
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510315434.5A Active CN105047692B (en) | 2015-06-10 | 2015-06-10 | substrate for high electron mobility transistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105047692B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107230619A (en) * | 2016-03-25 | 2017-10-03 | 北京大学 | The preparation method of enhancement type gallium nitride transistor |
| CN110379854A (en) * | 2019-07-26 | 2019-10-25 | 同辉电子科技股份有限公司 | A kind of epitaxy of gallium nitride technology suitable for power device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060060895A1 (en) * | 2004-09-17 | 2006-03-23 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for fabricating the same |
| CN101319402A (en) * | 2007-06-01 | 2008-12-10 | 住友电气工业株式会社 | Growth method of a gan crystal, and gan crystal substrate |
| CN101399284A (en) * | 2007-09-26 | 2009-04-01 | 中国科学院半导体研究所 | Gallium nitride based transistor structure with high electron mobility |
| CN102544086A (en) * | 2010-12-24 | 2012-07-04 | 山东华光光电子有限公司 | GaN-based high-electron-mobility transistor and manufacturing method thereof |
| CN102569390A (en) * | 2010-12-24 | 2012-07-11 | 中国科学院微电子研究所 | High-breakdown gallium nitride-based field effect transistor device and manufacturing method thereof |
-
2015
- 2015-06-10 CN CN201510315434.5A patent/CN105047692B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060060895A1 (en) * | 2004-09-17 | 2006-03-23 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for fabricating the same |
| CN101319402A (en) * | 2007-06-01 | 2008-12-10 | 住友电气工业株式会社 | Growth method of a gan crystal, and gan crystal substrate |
| CN101399284A (en) * | 2007-09-26 | 2009-04-01 | 中国科学院半导体研究所 | Gallium nitride based transistor structure with high electron mobility |
| CN102544086A (en) * | 2010-12-24 | 2012-07-04 | 山东华光光电子有限公司 | GaN-based high-electron-mobility transistor and manufacturing method thereof |
| CN102569390A (en) * | 2010-12-24 | 2012-07-11 | 中国科学院微电子研究所 | High-breakdown gallium nitride-based field effect transistor device and manufacturing method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107230619A (en) * | 2016-03-25 | 2017-10-03 | 北京大学 | The preparation method of enhancement type gallium nitride transistor |
| CN110379854A (en) * | 2019-07-26 | 2019-10-25 | 同辉电子科技股份有限公司 | A kind of epitaxy of gallium nitride technology suitable for power device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105047692B (en) | 2018-08-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Wong et al. | N-polar GaN epitaxy and high electron mobility transistors | |
| US9112048B2 (en) | Vertical field effect transistor on oxide semiconductor substrate | |
| CN101399284B (en) | Gallium nitride based transistor structure with high electron mobility | |
| Kaun et al. | Molecular beam epitaxy for high-performance Ga-face GaN electron devices | |
| CN100495724C (en) | Gallium nitride radical heterojunction field effect transistor structure and method for making the same | |
| EP2610898B1 (en) | Method for fabricating epitaxial substrate for semiconductor device, and method for fabricating semiconductor device | |
| CN104134690B (en) | A kind of HEMT and preparation method thereof | |
| CN104600109A (en) | High pressure resistant nitride semiconductor epitaxial structure and growing method thereof | |
| CN108352306A (en) | The manufacturing method of epitaxial substrate for semiconductor device, semiconductor element and epitaxial substrate for semiconductor device | |
| CN102789982A (en) | Enhanced A1N/GaN high-electron mobility transistor and fabrication method thereof | |
| JP6882503B2 (en) | Gallium Nitride High Electron Mobility Transistor with High Breakdown Voltage and Its Formation Method | |
| CN102569390A (en) | High-breakdown gallium nitride-based field effect transistor device and manufacturing method thereof | |
| CN101266999A (en) | GaN dual heterogeneity node field effect transistor structure and its making method | |
| CN108447908A (en) | A kind of high electron mobility transistor | |
| CN104091759B (en) | A kind of Sapphire Substrate AlN epitaxial layers HEMT growing method | |
| KR20150091705A (en) | Nitride semiconductor and method thereof | |
| CN100397655C (en) | Structure of improving gallium nitride base high electronic mobility transistor property and producing method | |
| CN105047692A (en) | Substrate for high-electron-mobility transistor | |
| CN108352327A (en) | The manufacturing method of epitaxial substrate for semiconductor device, semiconductor element and epitaxial substrate for semiconductor device | |
| CN104465403B (en) | The preparation method of enhanced AlGaN/GaN HEMT devices | |
| CN112216739B (en) | Low-thermal-resistance silicon-based gallium nitride microwave millimeter wave device material structure and preparation method | |
| US20120280233A1 (en) | Nitride-based heterostructure field effect transistor having high efficiency | |
| Hsu et al. | Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications | |
| CN102544086A (en) | GaN-based high-electron-mobility transistor and manufacturing method thereof | |
| KR101205872B1 (en) | GaN based semiconductor device and method of manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |