CN108364943A - A kind of package module of power conversion circuit - Google Patents
A kind of package module of power conversion circuit Download PDFInfo
- Publication number
- CN108364943A CN108364943A CN201810157551.7A CN201810157551A CN108364943A CN 108364943 A CN108364943 A CN 108364943A CN 201810157551 A CN201810157551 A CN 201810157551A CN 108364943 A CN108364943 A CN 108364943A
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- China
- Prior art keywords
- electrode
- semiconductor element
- conductive
- conductive pattern
- power conversion
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
- H01L23/49844—Geometry or layout for devices being provided for in H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
The present invention provides a kind of package module of power conversion circuit, the present invention is used in the vertically arranged chip of insulating substrate, convenient to be electrically connected, and realizes no bonding wire electrical connection, and longitudinal space is reasonably utilized, it is possible to reduce the use of horizontal space；The purpose that plastic packaging had both may be implemented in the electrical interconnection between two semiconductor chips is carried out using the first plastic packaging resin, having can achieve the purpose that save electrode plate and bonding wire, also ensure the reliability of electrical connection；Radiated using plastic packaging resin, and it is additional be added to radiating insulating particle, enhance heat dissipation effect.
Description
Technical field
The present invention relates to field of power conversion, and in particular to a kind of Encapsulation Moulds of the power conversion circuit of processing high current
Block.
Background technology
The encapsulation of existing electrical power conversion chip is mostly to be carried out in same level, this kind is packaged with conducive to slimming
Needs, but be very unfavorable for reducing lateral dimension, facilitating wiring and improve radiating efficiency, such as shown in Fig. 1
Electrical power conversion encapsulation comprising carry conductive pattern insulating substrate 100, the insulating substrate 100 include insulating layer 1100, on
The second conductive pattern 1200 on first conductive pattern 1000 and second surface on surface, two semiconductor elements 110 pass through weldering
Line 140 is electrically connected to each other and is connected on the first conductive pattern 1000, and by two 420 leading-out terminals of electrode, leaks out outer connect
Face a finally carries out whole plastic packaging with resin 130.The encapsulation needs prodigious horizontal space, but wastes longitudinal space, and
The bonding wire used is more, is also easy to produce the risk of disconnection, and chip and electrode are bonded in the first conductive pattern by binder 150
On 100, when usage time is longer, cracking is will produce, leads to problems such as to be electrically connected unstable.
Invention content
Based on solving the above problems, the present invention provides a kind of package modules of power conversion circuit comprising：
Ceramic substrate is provided with electric each other on the first surface with opposite first surface and second surface
The first conductive pattern and the second conductive pattern of isolation, are provided with third conductive pattern, and in institute on the second surface
Stating setting on first surface, there are two grooves, and the groove is between the first conductive pattern and the second conductive pattern；
First semiconductor element and the second semiconductor element, first semiconductor element have opposite third surface and
4th surface has first electrode on the third surface, has second electrode and third electrode on the 4th surface；It is described
Second semiconductor element has opposite the 5th surface and the 6th surface, has the 4th electrode on the 5th surface, and described the
There is the 5th electrode on six surfaces；First semiconductor element and the second semiconductor element respectively part, be inserted perpendicularly into institute
It states in groove, and a part for the exposing first electrode, a part for second electrode, the whole of third electrode, the 4th electrode
A part and the 5th electrode a part, the 4th surface and the opposite setting in the 5th surface；The first electrode is logical
It crosses the first conductive adhesive and is electrically connected to first conductive pattern, the second electrode is electrically connected by the second conductive adhesive
Second conductive pattern, the 5th electrode are electrically connected to first conductive pattern by third conductive adhesive；
First plastic packaging resin, it includes can activated metal organic polymer material, cover first conductive pattern, second
The part of conductive pattern and semiconductor chip and the second semiconductor chip, and first sealing resin has upper surface,
A part for a part and the 4th electrode for the third electrode is exposed in the upper surface, and first sealing resin, which has, to be located at
Conductive layer between the third electrode of first semiconductor element and the 4th electrode of second semiconductor element, it is described to lead
Electric layer is got by activating the organometallic polymer, and the upper surface of the conductive layer is upper with first sealing resin
Surface flushes；The third electrode is electrically connected to the conductive layer by the 4th conductive adhesive, and the 4th electrode passes through
Five conductive adhesives are electrically connected to the conductive layer；
Insertion the first plastic packaging resin of first electrode plate and second electrode plate, the first electrode plate part is interior and logical
It crosses solder and is electrically connected to first conductive pattern, insertion the first plastic packaging resin of the second electrode plate part and pass through
Solder is electrically connected to the conductive layer；
Second plastic packaging resin is set on the first plastic packaging resin, is sealed first semiconductor element, the second half is led
The part of volume elements part and first electrode plate and second electrode plate, and at least expose the first electrode plate and second electrode plate
Outer even terminal.
According to an embodiment of the invention, further include shell, the shell is located on the ceramic substrate, and around described the
One and the second plastic packaging resin, in the insertion shell of the both ends part of the ceramic substrate.
According to an embodiment of the invention, first to fourth conductive adhesive is solder, electroconductive curable resin or conduction
Ink etc..
According to an embodiment of the invention, evenly dispersed in the first and second plastic packagings resin to have heat dissipation ceramic particle, institute
The material for stating ceramic particle is selected from the one or more of SiC, Al2O3, SiO2 and Si3N4.
According to an embodiment of the invention, the first electrode plate and second electrode plate are lead frame.
According to an embodiment of the invention, further include radiator, the radiator is attached at the 4th conductive pattern.
According to an embodiment of the invention, it is provided with adhesive glue in the groove, be used for the first semiconductor element and second
In semiconductor element bonding and the groove.
According to an embodiment of the invention, first semiconductor element is IGBT or MOSFET chips, and described the second half lead
Body chip is diode.
Advantages of the present invention is as follows：
(1) present invention is used in the vertically arranged chip of insulating substrate, convenient to be electrically connected, and realizes no bonding wire and is electrically connected
It connects, and longitudinal space is reasonably utilized, it is possible to reduce the use of horizontal space；
(2) purpose that plastic packaging had both may be implemented in the electrical interconnection between two semiconductor chips is carried out using the first plastic packaging resin, had
It can achieve the purpose that save electrode plate and bonding wire, also ensure the reliability of electrical connection；
(3) radiated using plastic packaging resin, and it is additional be added to radiating insulating particle, enhance heat dissipation effect.
Description of the drawings
Fig. 1 is the sectional view of the package module of the power conversion circuit of the prior art；
Fig. 2 is the sectional view of the package module of the power conversion circuit of the present invention.
Specific implementation mode
Referring to Fig. 2, the package module of power conversion circuit of the invention comprising：
Ceramic substrate 1 is provided with electric each other on the first surface with opposite first surface and second surface
The first conductive pattern 4 and the second conductive pattern 5 of isolation, are provided with third conductive pattern 6 on the second surface, and
There are two grooves 7 for setting on the first surface, and the groove 7 is between the first conductive pattern 4 and the second conductive pattern 5；
First semiconductor element 2 and the second semiconductor element 3, first semiconductor element 2 have opposite third table
Face and the 4th surface have first electrode on the third surface, have second electrode and third electrode on the 4th surface；
Second semiconductor element 3 has opposite the 5th surface and the 6th surface, has the 4th electrode, institute on the 5th surface
Stating has the 5th electrode on the 6th surface；First semiconductor element 2 is distinguished part, vertical with the second semiconductor element 3
It is inserted into the groove 7, and exposes the part of the first electrode, a part for second electrode, the whole of third electrode, the
A part for a part for four electrodes and the 5th electrode, the 4th surface and the opposite setting in the 5th surface；Described first
Electrode is electrically connected to first conductive pattern 4 by the first conductive adhesive 9, and the second electrode passes through the second conductive bond
Agent 10 is electrically connected second conductive pattern 5, and the 5th electrode is electrically connected to described first by third conductive adhesive 11
Conductive pattern 4；
First plastic packaging resin 12, it includes can activated metal organic polymer material, cover first conductive pattern 4,
The part of second conductive pattern 5 and semiconductor chip 2 and the second semiconductor chip 3, and first sealing resin 12 has
There are upper surface 14, the upper surface 14 to expose a part for a part and the 4th electrode for the third electrode, described first is close
Seal the 4th electrode of third electrode and second semiconductor element 3 that resin 12 has positioned at first semiconductor element 2
Between conductive layer 15, the conductive layer 15 gets by activating the organometallic polymer, the conductive layer 15 it is upper
The upper surface flush on surface and first sealing resin 12；The third electrode is electrically connected to by the 4th conductive adhesive 16
The conductive layer 15, the 4th electrode are electrically connected to the conductive layer 15 by the 5th conductive adhesive 17；
First electrode plate 18 and second electrode plate 20, insertion the first plastic packaging resin of 18 part of first electrode plate
It is electrically connected to first conductive pattern 4, insertion first modeling of 20 part of second electrode plate in 12 and by solder
It seals resin 12 and the conductive layer 15 is electrically connected to by solder；
Second plastic packaging resin 13 is set on the first plastic packaging resin 12, seals first semiconductor element 2, the
The part of two semiconductor elements 3 and first electrode plate 18 and second electrode plate 20, and at least expose the first electrode plate 18
Outer with second electrode plate 20 connects terminal；
Shell 19, the shell 19 are located on the ceramic substrate 1, and around 12 He of the first and second plastic packagings resin
13, in the insertion of the both ends part of the ceramic substrate 1 shell 19.
Wherein, first to fourth conductive adhesive is solder, electroconductive curable resin or electrically conductive ink etc., described first
Have a heat dissipation ceramic particle with evenly dispersed in the second plastic packaging resin 12 and 13, the material of the ceramic particle be selected from SiC, Al2O3,
SiO2's and Si3N4 is one or more；The first electrode plate 18 and second electrode plate 20 are lead frame.
Further include radiator, the radiator is attached at the 4th conductive pattern.Also, bonding is provided in the groove 7
Glue 8, for will the first semiconductor element 2 and the second semiconductor element 3 bond in the groove 7.First semiconductor element
Part 2 is IGBT or MOSFET chips, and second semiconductor chip 3 is diode.
Finally it should be noted that：Obviously, the above embodiment is merely an example for clearly illustrating the present invention, and simultaneously
The non-restriction to embodiment.For those of ordinary skill in the art, it can also do on the basis of the above description
Go out other various forms of variations or variation.There is no necessity and possibility to exhaust all the enbodiments.And thus drawn
The obvious changes or variations that Shen goes out are still in the protection scope of this invention.
Claims (8)
1. a kind of package module of power conversion circuit comprising：
Ceramic substrate is provided with electrically isolated from one on the first surface with opposite first surface and second surface
The first conductive pattern and the second conductive pattern, third conductive pattern is provided on the second surface, and described
There are two grooves for setting on one surface, and the groove is between the first conductive pattern and the second conductive pattern；
First semiconductor element and the second semiconductor element, first semiconductor element have opposite third surface and the 4th
Surface has first electrode on the third surface, has second electrode and third electrode on the 4th surface；Described second
Semiconductor element has opposite the 5th surface and the 6th surface, has the 4th electrode, the 6th table on the 5th surface
There is the 5th electrode on face；First semiconductor element and the second semiconductor element respectively part, be inserted perpendicularly into it is described recessed
In slot, and the one of a part for the exposing first electrode, a part for second electrode, the whole of third electrode, the 4th electrode
A part for part and the 5th electrode, the 4th surface and the opposite setting in the 5th surface；The first electrode passes through
One conductive adhesive is electrically connected to first conductive pattern, and the second electrode passes through described in the electrical connection of the second conductive adhesive
Second conductive pattern, the 5th electrode are electrically connected to first conductive pattern by third conductive adhesive；
First plastic packaging resin, it includes can activated metal organic polymer material, cover first conductive pattern, second conductive
The part of pattern and semiconductor chip and the second semiconductor chip, and first sealing resin has upper surface, it is described
A part for a part and the 4th electrode for the third electrode is exposed in upper surface, and first sealing resin has positioned at described
Conductive layer between the third electrode of first semiconductor element and the 4th electrode of second semiconductor element, the conductive layer
It is got by activating the organometallic polymer, the upper surface of the upper surface of the conductive layer and first sealing resin
It flushes；The third electrode is electrically connected to the conductive layer by the 4th conductive adhesive, and the 4th electrode is led by the 5th
Electric binder is electrically connected to the conductive layer；
Insertion the first plastic packaging resin of first electrode plate and second electrode plate, the first electrode plate part is interior and passes through weldering
Material is electrically connected to first conductive pattern, insertion the first plastic packaging resin of the second electrode plate part and passes through solder
It is electrically connected to the conductive layer；
Second plastic packaging resin is set on the first plastic packaging resin, seals first semiconductor element, the second semiconductor element
The part of part and first electrode plate and second electrode plate, and at least expose the first electrode plate and the outer of second electrode plate connects
Terminal.
2. the package module of power conversion circuit according to claim 1, it is characterised in that：Further include shell, the shell
Body is located on the ceramic substrate, and surround the first and second plastic packagings resin, the both ends part of the ceramic substrate
It is inserted into the shell.
3. the package module of power conversion circuit according to claim 2, it is characterised in that：Described first to fourth is conductive
Binder is solder, electroconductive curable resin or electrically conductive ink etc..
4. the package module of power conversion circuit according to claim 1, it is characterised in that：First and second plastic packaging
It is evenly dispersed in resin to there is heat dissipation ceramic particle, the material of the ceramic particle to be selected from the one of SiC, Al2O3, SiO2 and Si3N4
Kind is a variety of.
5. the package module of power conversion circuit according to claim 1, it is characterised in that：The first electrode plate and
Two electrode plates are lead frame.
6. the package module of power conversion circuit according to claim 1, it is characterised in that：Further include radiator, it is described
Radiator is attached at the 4th conductive pattern.
7. the package module of power conversion circuit according to claim 1, it is characterised in that：It is provided in the groove viscous
Close glue, for will the first semiconductor element and the second semiconductor element bond in the groove.
8. the package module of power conversion circuit according to claim 1, it is characterised in that：First semiconductor element
For IGBT or MOSFET chips, second semiconductor chip is diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810157551.7A CN108364943B (en) | 2018-02-24 | 2018-02-24 | Packaging module of power conversion circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810157551.7A CN108364943B (en) | 2018-02-24 | 2018-02-24 | Packaging module of power conversion circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108364943A true CN108364943A (en) | 2018-08-03 |
| CN108364943B CN108364943B (en) | 2020-10-23 |
Family
ID=63002686
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810157551.7A Active CN108364943B (en) | 2018-02-24 | 2018-02-24 | Packaging module of power conversion circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108364943B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115632100A (en) * | 2022-12-23 | 2023-01-20 | 广东中科半导体微纳制造技术研究院 | Matrix semiconductor circuit structure, packaging structure thereof and light-emitting device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5305344A (en) * | 1993-04-29 | 1994-04-19 | Opto Power Corporation | Laser diode array |
| CN103222053A (en) * | 2010-09-24 | 2013-07-24 | 半导体元件工业有限责任公司 | Circuit device |
| CN103400810A (en) * | 2013-06-28 | 2013-11-20 | 三星半导体(中国)研究开发有限公司 | Semiconductor chip laminating and packaging structure and manufacturing method thereof |
| CN107112316A (en) * | 2014-12-26 | 2017-08-29 | 三菱电机株式会社 | Semiconductor module |
-
2018
- 2018-02-24 CN CN201810157551.7A patent/CN108364943B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5305344A (en) * | 1993-04-29 | 1994-04-19 | Opto Power Corporation | Laser diode array |
| CN103222053A (en) * | 2010-09-24 | 2013-07-24 | 半导体元件工业有限责任公司 | Circuit device |
| CN103400810A (en) * | 2013-06-28 | 2013-11-20 | 三星半导体(中国)研究开发有限公司 | Semiconductor chip laminating and packaging structure and manufacturing method thereof |
| CN107112316A (en) * | 2014-12-26 | 2017-08-29 | 三菱电机株式会社 | Semiconductor module |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115632100A (en) * | 2022-12-23 | 2023-01-20 | 广东中科半导体微纳制造技术研究院 | Matrix semiconductor circuit structure, packaging structure thereof and light-emitting device |
| CN115632100B (en) * | 2022-12-23 | 2023-03-10 | 广东中科半导体微纳制造技术研究院 | Matrix semiconductor circuit structure, packaging structure thereof and light-emitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108364943B (en) | 2020-10-23 |
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Effective date of registration: 20200922 Address after: 225300 No. 999, Nanhuan West Road, Luotang Street, Jiangyan District, Taizhou City, Jiangsu Province (in Jiangyan High-tech Venture Center) Applicant after: TAIZHOU YUANHEDA ELECTRONIC TECHNOLOGY Co.,Ltd. Address before: 262700 South Ring Road, Shouguang City, Weifang, Shandong Province, No. 1500 Applicant before: Han Dejun |
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