CN108346613A - Separate type base assembly suitable for one chip epitaxial furnace - Google Patents
Separate type base assembly suitable for one chip epitaxial furnace Download PDFInfo
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- CN108346613A CN108346613A CN201710056500.0A CN201710056500A CN108346613A CN 108346613 A CN108346613 A CN 108346613A CN 201710056500 A CN201710056500 A CN 201710056500A CN 108346613 A CN108346613 A CN 108346613A
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- separate type
- base assembly
- cavern
- type base
- main part
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
Abstract
The present invention provides a kind of separate type base assembly suitable for one chip epitaxial furnace, including separate type pedestal, and the separate type pedestal includes：First part, first part include main part and cavern part, and cavern part runs through main part along the thickness direction of main part；Second part, second part includes planar portions, the shape and size of planar portions are identical as the shape of cavern part and size, second part is used cooperatively with first part, when second part coordinates with first part, planar portions are embedded in cavern part, and the upper surface flush of the upper surface of planar portions and main part adjacent on the outside of cavern part.By two parts that pedestal is designed to separate type so that the pedestal after combination two parts is not necessarily to through-hole or thimble, can be achieved with the existing requirement for passing piece equipment；Meanwhile the pedestal after combination show it is complete discoid, it is complete it is discoid be beneficial to the uniform of substrate temperature, that improves extension meron just shows nanotopography, while reducing the backside deposition of extension meron.
Description
Technical field
The invention belongs to technical field of semiconductors, more particularly to a kind of separate type pedestal suitable for one chip epitaxial furnace
Component.
Background technology
Existing mainstream one chip epitaxial furnace is generally used disc type pedestal (Susceptor) design, and pedestal is as outer
The device that pedestal displays when prolonging deposition, decisive role is played to extension tablet quality.
A kind of existing pedestal is as shown in Figure 1, the pedestal includes：Base body 11 is equipped in the Base body 11
Multiple first through hole 12, the effect of the first through hole 12 is can smooth pulldown when bernoulli gripper works；If no
The first through hole 12, in pulldown, the region sealed between substrate 15 and the pedestal will form negative pressuren zone, and then increase
The pressure of 15 upper and lower surface of the substrate, the pressure difference press the substrate 15 on the pedestal, in turn result in pulldown failure.On
The substrate is stated due to being equipped with the first through hole 12 in the base body 11, substrate 15 is be easy to cause during extension
Non-uniform temperature, and then non-uniform deposition is caused in the upper and lower surface of the substrate 15, to cause in the substrate 15
Cause the deterioration of the parameters such as nanotopography (nanotopography) in surface.
Existing another kind pedestal is as shown in Fig. 2, the pedestal includes：Base body 11 and thimble 14, the pedestal master
The second through-hole 13 is equipped in body 11, the thimble 14 is inserted into via second through-hole 13 in the Base body 11.It is needing
When pulldown, substrate 15 is jacked up by the thimble 14, then the crawl of the substrate 15 is carried out with mechanical arm.However, in this
The pedestal is in normal epitaxial growth, and since the thimble 14 is suspended on the pedestal, thimble the last 14 outstanding is led
Causing the substrate 15, temperature distribution is non-uniform in 14 position of the thimble, and then causes the top at 15 back side of the substrate
The needle marking (lift pin mark), while can also cause the deterioration of the parameters such as nanotopography in the front of the substrate 15.
Invention content
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide one kind being suitable for one chip epitaxial furnace
Separate type base assembly, for solve pedestal in the prior art due in Base body be equipped with through-hole caused by extension
During be easy to cause the non-uniform temperature of substrate, and then non-uniform deposition is caused in the upper and lower surface of substrate, to make
The problem of at the deterioration for causing the parameters such as nanotopography in substrate surface, and due to pedestal in the prior art using thimble and
Temperature distribution is non-uniform in thimble position for caused substrate, and then the thimble marking is caused in substrate back, simultaneously also
It can be the problem of the deterioration of the parameters such as nanotopography be caused in the front of substrate.
In order to achieve the above objects and other related objects, the present invention provides a kind of separate type suitable for one chip epitaxial furnace
Base assembly, the separate type base assembly include separate type pedestal, and the separate type pedestal includes：
First part, the first part include main part and cavern part, thickness of the cavern part along the main part
The main part is run through in direction；
Second part, the second part include planar portions, shape and size and the cavern part of the planar portions
Shape and size are identical, and the second part is used cooperatively with the first part, the second part and the first part
When cooperation, the planar portions are embedded in the cavern part, and the upper surface of the planar portions and adjoining on the outside of the cavern part
The upper surface flush of the main part.
A kind of preferred embodiment of the separate type base assembly suitable for one chip epitaxial furnace as the present invention, the main body
The upper surface in portion is equipped with the groove for being suitable for placing substrate, and the groove is located at the periphery of the cavern part.
A kind of preferred embodiment of the separate type base assembly suitable for one chip epitaxial furnace as the present invention, the groove
Periphery be equipped with arc slope surface, the arch section of the arc slope surface and near substrate edge matches.
A kind of preferred embodiment of the separate type base assembly suitable for one chip epitaxial furnace as the present invention, the main body
The lower surface in portion is located at the periphery of the cavern part equipped at least the first hierarchic structure of level-one, first hierarchic structure；It is described
Second part further includes stepped part, and the stepped part includes the second hierarchic structure, second hierarchic structure and first rank
Terraced structure is correspondingly arranged up and down, and when the first part and the second part coordinate, second hierarchic structure and institute
It is seamless applying to state the first hierarchic structure.
A kind of preferred embodiment of the separate type base assembly suitable for one chip epitaxial furnace as the present invention, the separation
Formula base assembly further includes support shaft, and one end of the support shaft is connected with the bottom of the second part, is suitable for driving institute
State second part up and down motion.
A kind of preferred embodiment of the separate type base assembly suitable for one chip epitaxial furnace as the present invention, the main body
Portion is annular body portion, and the cavern part is the through-hole on the inside of the main part.
A kind of preferred embodiment of the separate type base assembly suitable for one chip epitaxial furnace as the present invention, the separation
Formula base assembly further includes the first preheating ring and the first pallet；The first preheating ring is located at outside the separate type pedestal
It encloses；First pallet is located at described first and preheats on the inside of ring, and first tray upper surface is less than first pre-add
Hot ring upper surface, first pallet is interior to be equipped with through-hole, and the lateral dimension of first pallet is greater than or equal to described first
The lateral dimension of the lateral dimension divided, the through-hole is less than the lateral dimension of the first part and more than the second part
Lateral dimension.
A kind of preferred embodiment of the separate type base assembly suitable for one chip epitaxial furnace as the present invention, the main body
Portion is to have main part jaggy, the cavern part include be located at through-hole on the inside of the main part and by the through-hole with it is described
The notch being connected on the outside of main part.
A kind of preferred embodiment of the separate type base assembly suitable for one chip epitaxial furnace as the present invention, the separation
Formula base assembly further includes the second preheating ring and the second pallet；The second preheating ring is located at outside the separate type pedestal
It encloses；Second pallet is loop configuration, and the internal diameter of second pallet is greater than or equal to the described second internal diameter for preheating ring,
Second pallet is fixed on the lower section of the second preheating ring via link block, and is mutually separated with the second preheating ring
Spacing；The link block is located at the lower section of the preheating ring, and positioned at the outside of the through-hole.
As described above, the separate type base assembly suitable for one chip epitaxial furnace of the present invention, has the advantages that：
By two parts that pedestal is designed to separate type so that the pedestal after combination two parts is not necessarily to through-hole or thimble, can be achieved with
The existing requirement for passing piece equipment；Meanwhile the pedestal after combination show it is complete discoid, it is complete discoid to be beneficial to base
Piece temperature it is uniform, improve extension meron and just show nanotopography, while reducing the backside deposition of extension meron.
Description of the drawings
Fig. 1 and Fig. 2 is shown as the cross section structure of the separate type base assembly suitable for one chip epitaxial furnace of the prior art
Schematic diagram.
Fig. 3 is shown as the vertical of the separate type base assembly suitable for one chip epitaxial furnace provided in the embodiment of the present invention one
Body structural schematic diagram.
Fig. 4 and Fig. 5 is cross section structure schematic diagrams of the Fig. 3 along the directions AA '.
Fig. 6 and Fig. 7 is shown as the separate type pedestal group suitable for one chip epitaxial furnace provided in the embodiment of the present invention one
The cross section structure schematic diagram that the first part of part detaches with second part.
Fig. 8 is shown as the work of the separate type base assembly suitable for one chip epitaxial furnace provided in the embodiment of the present invention one
Make theory structure schematic diagram.
Fig. 9 is shown as the vertical of the separate type base assembly suitable for one chip epitaxial furnace provided in the embodiment of the present invention two
Body structural schematic diagram.
Figure 10 is cross section structure schematic diagrams of the Fig. 9 along the directions BB '.
Figure 11 is shown as the separate type base assembly suitable for one chip epitaxial furnace provided in the embodiment of the present invention two
Positive structure diagram.
Figure 12 is shown as the separate type base assembly suitable for one chip epitaxial furnace provided in the embodiment of the present invention two
Separate type pedestal first part and the second structural schematic diagram for combining of preheating ring.
Figure 13 is shown as the separate type base assembly suitable for one chip epitaxial furnace provided in the embodiment of the present invention two
The cross section structure schematic diagram that first part detaches with second part.
Figure 14 is shown as the separate type base assembly suitable for one chip epitaxial furnace provided in the embodiment of the present invention two
Operation principle structural schematic diagram.
Component label instructions
11 Base bodies
12 first through hole
13 second through-holes
14 thimbles
15 pedestals
2 separate type pedestals
21 first parts
211 main parts
2111 grooves
2112 arc slope surfaces
2113 first hierarchic structures
212 cavern parts
2121 through-holes
2122 notches
22 second parts
221 planar portions
222 second hierarchic structures
3 first preheating rings
4 first pallets
5 support shafts
6 second preheating rings
7 second pallets
8 link blocks
91 bernoulli grippers
92 substrates
93 mechanical arms
Specific implementation mode
Illustrate that embodiments of the present invention, those skilled in the art can be by this specification below by way of specific specific example
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Fig. 3 to Figure 14 is please referred to it should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, though package count when only display is with related component in the present invention rather than according to actual implementation in diagram
Mesh, shape and size are drawn, when actual implementation form, quantity and the ratio of each component can be a kind of random change, and its
Assembly layout form may also be increasingly complex.
Embodiment one
Fig. 3 to Fig. 7 is please referred to, the present invention provides a kind of separate type base assembly suitable for one chip epitaxial furnace, described
Separate type base assembly includes separate type pedestal 2, and the separate type pedestal 2 includes：First part 21, the first part 21 wrap
Main part 211 and cavern part 212 are included, the cavern part 212 runs through the main part along the thickness direction of the main part 211
211；Second part 22, the second part 22 include planar portions 221, shape and size and the digging of the planar portions 221
The shape and size in empty portion 212 are identical, and the second part 22 is used cooperatively with the first part 21, the second part 22
When coordinating with the first part 21, the planar portions 221 are embedded in the cavern part 212, and the upper table of the planar portions 221
The upper surface flush of the face main part 211 adjacent with 22 outside of the cavern part.
As an example, the upper surface of the main part 211 is equipped with the groove 2111 for being suitable for placing substrate 92, the groove
2111 are located at the periphery of the cavern part 212.
As an example, the periphery of the groove 2111 is equipped with arc slope surface 2112, the arc slope surface 2112 and substrate 92
The arch section of adjacent edges matches, to make the substrate 92 when ensuring that the substrate 92 is placed in the groove 2111
The remaining groove 2111 comes into full contact with, and contact surface reaches maximum.
As an example, the lower surface of the main part 211 is equipped at least the first hierarchic structure of level-one 2113, first rank
Terraced structure 2113 is located at the periphery of the cavern part 212；The second part 22 further includes stepped part, and the stepped part includes the
Two hierarchic structures 222, second hierarchic structure 222 are correspondingly arranged with about 2,113 first hierarchic structure, and described
When first part 21 coordinates with the second part 22, second hierarchic structure 222 and 2113 nothing of the first hierarchic structure
Seam fitting.The main part 211 of the first part 21 passes through first hierarchic structure 2113 with the second part 22
The grade second stage structure 222 is combined, and the first part 21 may be implemented and combined with the sealing of the second part 22.
As an example, the separate type base assembly further includes support shaft 5, one end of the support shaft 5 and described second
The bottom of part 22 is connected, and is suitable for that the second part 22 is driven to move up and down.
As an example, as shown in Fig. 3 to Fig. 7, the main part 211 is annular body portion, the cavern part 212 be positioned at
The through-hole of 211 inside of the main part.
As an example, the separate type base assembly further includes the first preheating ring 3 and the first pallet 4；Described first is pre-
Heating ring 3 is located at 2 periphery of the separate type pedestal；First pallet 4 is located at described first and preheats 3 inside of ring, and described
First pallet, 4 upper surface preheats 3 upper surface of ring less than described first, and through-hole, first support are equipped in first pallet 3
The lateral dimension of disk 4 is greater than or equal to the lateral dimension of the first part 21, and the lateral dimension of the through-hole is less than described the
The lateral dimension of a part 21 and the lateral dimension for being more than the second part 22.
As shown in figure 8, the work of the separate type base assembly suitable for one chip epitaxial furnace described in the present embodiment is former
Reason is：When placing substrate 92, the first part 21 of the separate type pedestal 2 and second part 22 combine at this time, use
The substrate 92 is sucked bernoulli gripper 91 is positioned on the separate type pedestal 2；When taking out the substrate 92, reduce
The height of the support shaft 5 so that the first part 21 of the separate type pedestal 2, which reduces, is in reset state, at this point, described point
First pallet 4 that second part 22 from formula pedestal 2 is integrated on the first preheating ring 3 is held, and described first
Part 21 is detached with the second part 22, and the pressure of 92 upper and lower surface of the pedestal is identical so that the bernoulli gripper 91
Smoothly the substrate 92 can be picked up.
Embodiment two
Fig. 9 to Figure 13 is please referred to, the present embodiment also provides a kind of separate type base assembly suitable for one chip epitaxial furnace,
The structure of the separate type base assembly suitable for one chip epitaxial furnace described in the present embodiment and fitting described in embodiment one
The structure of separate type base assembly for one chip epitaxial furnace is roughly the same, the two difference lies in：It is described in embodiment one
Main part 211 is annular body portion, and the cavern part 212 is the through-hole positioned at 211 inside of the main part；The separate type base
Holder assembly further includes the first preheating ring 3 and the first pallet 4；The first preheating ring 3 is located at outside the separate type pedestal 2
It encloses；First pallet 4 is located at described first and preheats 3 inside of ring, and 4 upper surface of the first pallet is pre- less than described first
Ring 3 upper surface is heated, is equipped with through-hole in first pallet 3, the lateral dimension of first pallet 4 is greater than or equal to described the
The lateral dimension of a part 21, the lateral dimension of the through-hole are less than the lateral dimension of the first part 21 and more than described the
The lateral dimension of two parts 22；And in the present embodiment, the main part 211 is the main part with notch 2122, the digging
Empty portion 212 includes the through-hole 2121 being located on the inside of the main part 211 and will 211 outside of the through-hole 2121 and the main part
The notch 2122 being connected；The separate type base assembly further includes the second preheating ring 6 and the second pallet 7；Described second is pre-
Heating ring 6 is located at 2 periphery of the separate type pedestal；Second pallet 7 is loop configuration, and the internal diameter of second pallet 7 is big
In or equal to it is described second preheating ring 6 internal diameter, second pallet 7 via link block 8 be fixed on it is described second preheating
The lower section of ring 6, and it is separated with spacing with the second preheating 6 phase of ring；The link block 8 is located at the lower section of the preheating ring 6,
And positioned at the outside of the through-hole 2121.
As shown in figure 14, the work of the separate type base assembly suitable for one chip epitaxial furnace described in the present embodiment is former
Reason is：When placing substrate 92, first, the height of support shaft 5 is reduced so that the first part 21 of the separate type pedestal 2 and the
Two parts 22 are separated, at this point, the first part 21 of the separate type pedestal 2 is located on second pallet 7, by described second
Pallet 7 supports；Secondly, the mechanical arm 93 for carrying the substrate 92 is extend into the epitaxial furnace, the machinery is reduced
The height of arm 93 so that the first part 21 of the separate type pedestal 2 holds the substrate 92；Then, the machinery is exited
Arm 93；Finally, the height of the support shaft 5 is raised so that the first part 21 of the separate type pedestal 2 and second part 22
It combines.When taking out the substrate 92, first, the height of the support shaft 5 is reduced so that the separate type pedestal 2
First part 21 is separated with second part 22, at this point, the first part 21 of the separate type pedestal 2 is located at second pallet
It on 7, is supported by second pallet 7, the substrate 92, which is located at the separation, actually to be done in 2 first part 21；Secondly, it stretches into
The mechanical arm 93 raises the height of the mechanical arm 93 so that the mechanical arm 93 holds up the substrate 92；Most
Afterwards, the mechanical arm 93 is exited, that is, completes to take piece.
In conclusion the present invention provides a kind of separate type base assembly suitable for one chip epitaxial furnace, the separate type
Base assembly includes separate type pedestal, and the separate type pedestal includes：First part, the first part include main part and digging
Empty portion, the cavern part run through the main part along the thickness direction of the main part；Second part, the second part include
Planar portions, the shape and size of the planar portions are identical as the shape of the cavern part and size, the second part with it is described
First part is used cooperatively, and when the second part coordinates with the first part, the planar portions are embedded in the cavern part,
And the upper surface flush of the upper surface of the planar portions and the main part adjacent on the outside of the cavern part.By by pedestal
It is designed to two parts of separate type so that the pedestal after combination two parts is not necessarily to through-hole or thimble, can be achieved with existing biography piece and sets
Standby requirement；Meanwhile the pedestal after combination show it is complete discoid, it is complete discoid to be beneficial to the equal of substrate temperature
One, that improves extension meron just shows nanotopography, while reducing the backside deposition of extension meron.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology can all carry out modifications and changes to above-described embodiment without violating the spirit and scope of the present invention.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should by the present invention claim be covered.
Claims (9)
1. a kind of separate type base assembly suitable for one chip epitaxial furnace, which is characterized in that the separate type base assembly packet
Separate type pedestal is included, the separate type pedestal includes：
First part, the first part include main part and cavern part, thickness direction of the cavern part along the main part
Through the main part；
Second part, the second part include planar portions, the shape of the shape and size and the cavern part of the planar portions
And size is identical, the second part is used cooperatively with the first part, and the second part coordinates with the first part
When, the planar portions are embedded in the cavern part, and the upper surface of the planar portions with abutted on the outside of the cavern part it is described
The upper surface flush of main part.
2. the separate type base assembly according to claim 1 suitable for one chip epitaxial furnace, it is characterised in that：The master
The upper surface in body portion is equipped with the groove for being suitable for placing substrate, and the groove is located at the periphery of the cavern part.
3. the separate type base assembly according to claim 2 suitable for one chip epitaxial furnace, it is characterised in that：It is described recessed
The periphery of slot is equipped with arc slope surface, and the arch section of the arc slope surface and near substrate edge matches.
4. the separate type base assembly according to claim 1 suitable for one chip epitaxial furnace, it is characterised in that：The master
The lower surface in body portion is located at the periphery of the cavern part equipped at least the first hierarchic structure of level-one, first hierarchic structure；Institute
It further includes stepped part to state second part, and the stepped part includes the second hierarchic structure, second hierarchic structure and described first
Hierarchic structure is correspondingly arranged up and down, and when the first part and the second part coordinate, second hierarchic structure with
First hierarchic structure is seamless applying.
5. the separate type base assembly according to claim 1 suitable for one chip epitaxial furnace, it is characterised in that：Described point
Further include support shaft from formula base assembly, one end of the support shaft is connected with the bottom of the second part, is suitable for driving
The second part moves up and down.
6. the separate type base assembly according to any one of claim 1 to 5 suitable for one chip epitaxial furnace, feature
It is：The main part is annular body portion, and the cavern part is the through-hole on the inside of the main part.
7. the separate type base assembly according to claim 6 suitable for one chip epitaxial furnace, it is characterised in that：Described point
Further include the first preheating ring and the first pallet from formula base assembly；The first preheating ring is located at outside the separate type pedestal
It encloses；First pallet is located at described first and preheats on the inside of ring, and first tray upper surface is less than first pre-add
Hot ring upper surface, first pallet is interior to be equipped with through-hole, and the lateral dimension of first pallet is greater than or equal to described first
The lateral dimension of the lateral dimension divided, the through-hole is less than the lateral dimension of the first part and more than the second part
Lateral dimension.
8. the separate type base assembly according to any one of claim 1 to 5 suitable for one chip epitaxial furnace, feature
It is：The main part is to have main part jaggy, and the cavern part includes the through-hole being located on the inside of the main part and will
The notch being connected on the outside of the through-hole and the main part.
9. the separate type base assembly according to claim 8 suitable for one chip epitaxial furnace, it is characterised in that：Described point
Further include the second preheating ring and the second pallet from formula base assembly；The second preheating ring is located at outside the separate type pedestal
It encloses；Second pallet is loop configuration, and the internal diameter of second pallet is greater than or equal to the described second internal diameter for preheating ring,
Second pallet is fixed on the lower section of the second preheating ring via link block, and is mutually separated with the second preheating ring
Spacing；The link block is located at the lower section of the preheating ring, and positioned at the outside of the through-hole.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710056500.0A CN108346613A (en) | 2017-01-25 | 2017-01-25 | Separate type base assembly suitable for one chip epitaxial furnace |
| TW106124966A TWI649447B (en) | 2017-01-25 | 2017-07-25 | Separate base element for monolithic epitaxial furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710056500.0A CN108346613A (en) | 2017-01-25 | 2017-01-25 | Separate type base assembly suitable for one chip epitaxial furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108346613A true CN108346613A (en) | 2018-07-31 |
Family
ID=62961804
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710056500.0A Pending CN108346613A (en) | 2017-01-25 | 2017-01-25 | Separate type base assembly suitable for one chip epitaxial furnace |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN108346613A (en) |
| TW (1) | TWI649447B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113463190A (en) * | 2021-05-13 | 2021-10-01 | 顾赢速科技(合肥)有限公司 | Epitaxial growth device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030186563A1 (en) * | 2002-03-25 | 2003-10-02 | Dainippon Screen Mfg. Co., Ltd. | Thermal processing apparatus and thermal processing method |
| US20090068851A1 (en) * | 2007-09-11 | 2009-03-12 | Hironobu Hirata | Susceptor, manufacturing apparatus for semiconductor device and manufacturing method for semiconductor device |
| CN102082109A (en) * | 2009-10-27 | 2011-06-01 | Nps股份有限公司 | Susceptor unit and apparatus for processing substrate by using the susceptor unit |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102006055038B4 (en) * | 2006-11-22 | 2012-12-27 | Siltronic Ag | An epitaxated semiconductor wafer and apparatus and method for producing an epitaxied semiconductor wafer |
| CN103510158A (en) * | 2013-10-15 | 2014-01-15 | 瀚天天成电子科技（厦门）有限公司 | Compatible small-disk base for silicon carbide epitaxial furnace and using method thereof |
-
2017
- 2017-01-25 CN CN201710056500.0A patent/CN108346613A/en active Pending
- 2017-07-25 TW TW106124966A patent/TWI649447B/en active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030186563A1 (en) * | 2002-03-25 | 2003-10-02 | Dainippon Screen Mfg. Co., Ltd. | Thermal processing apparatus and thermal processing method |
| US20090068851A1 (en) * | 2007-09-11 | 2009-03-12 | Hironobu Hirata | Susceptor, manufacturing apparatus for semiconductor device and manufacturing method for semiconductor device |
| CN102082109A (en) * | 2009-10-27 | 2011-06-01 | Nps股份有限公司 | Susceptor unit and apparatus for processing substrate by using the susceptor unit |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113463190A (en) * | 2021-05-13 | 2021-10-01 | 顾赢速科技(合肥)有限公司 | Epitaxial growth device |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI649447B (en) | 2019-02-01 |
| TW201837229A (en) | 2018-10-16 |
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Application publication date: 20180731 |