CN102082109A - Susceptor unit and apparatus for processing substrate by using the susceptor unit - Google Patents
Susceptor unit and apparatus for processing substrate by using the susceptor unit Download PDFInfo
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- CN102082109A CN102082109A CN2010105286736A CN201010528673A CN102082109A CN 102082109 A CN102082109 A CN 102082109A CN 2010105286736 A CN2010105286736 A CN 2010105286736A CN 201010528673 A CN201010528673 A CN 201010528673A CN 102082109 A CN102082109 A CN 102082109A
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- substrate
- base
- pedestal
- main basal
- subbase seat
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
Abstract
A susceptor unit and an apparatus for processing a substrate using the same are provided to prevent temperature gradient due to the unbalance of a shape by forming a separable susceptor. A susceptor comprises a main susceptor and a sub susceptor. The main susceptor has a lift groove passing through the center of the main susceptor. The sub susceptor is inserted into the lift groove and engaged with it. The main susceptor is divided into a fixed susceptor and a separable susceptor. The fixing susceptor has a division groove passing through the center of the fixing susceptor. A lifting unit raises the sub susceptor or the separable susceptor.
Description
Technical field
The present invention relates to a kind of pedestal (susceptor) and a kind of substrate-treating apparatus with described pedestal, and more particularly, the present invention relates to a kind of generation that can prevent temperature gradient (temperature gradient) so that carry out heat treated pedestal equably with respect to substrate, and a kind of substrate-treating apparatus with described pedestal.
Background technology
Recently, because heat treatment is (slicated) of layering in semi-conductive manufacturing, so (rapid thermal process, RTP) use of equipment increases day by day to rapid thermal treatment.RTP equipment can come Fast Heating and cooling substrate by using from the radiation that thermal source radiated (radiant ray) of for example lamp.
Has base unit in the RTP equipment of prior art.Described base unit by the substrate disposal unit that substrate is moved up and down and above lay substrate through moving pedestal constitute.
According to prior art, lifting push rod (lift pin) is usually as the substrate disposal unit.Jogger hole (pin hole) via being formed on the pedestal drives the lifting push rod up and down so that substrate is placed on the pedestal.Use a plurality of lifting push rods to keep the horizontal level of the substrate that moves up and down.
Yet,,, therefore reduced the comparatively output of expensive substrate, and reduced productivity ratio so the surface of substrate may be damaged (push rod vestige) because the tip, top (supporting the lower surface of substrate) of lifting push rod is sharp.
According to prior art, will cover tip, top that (cap) be coupled to or be formed at the point of lifting push rod and sentence and prevent this type of damage of causing by the tip, top of lifting push rod substrate.The upper face of lid is through forming horizontal plane and making that forming the surface with the lower surface of substrate contacts (surface-contact).With with the identical mode of lifting push rod at tip, the slightly pointed top of tool, also drive lifting push rod up and down with lid via the jogger hole that is formed at the pedestal place.
The lifting push rod of prior art moves down in the state of support substrates, and then substrate is placed on the pedestal.Here, owing to substrate is placed on the pedestal, so the lifting push rod is placed in the jogger hole.Yet, in the prior art, make its little diameter of ratio jogger hole that moves up and down smoothly owing to the lifting push rod has, so in this state, generated white space (empty space) in the jogger hole.
White space reduces the balance of the shape of pedestal, and causes the temperature gradient at pedestal place during the heat treatment of substrate.Therefore, the heat treatment that is placed in the substrate on the pedestal is to carry out unevenly.(here, uneven heat treatment result can prove by the roughness according to the regional substrate surface that changes.)
Simultaneously, according to prior art, because the substrate that is placed on the pedestal forms surperficial the contact each other with pedestal, so the degree that closely contacts during the processing of substrate has improved.In other words, when substrate after substrate processing during with base-separation, substrate may damage or be out of shape, therefore the defective of bringing out substrate.
Summary of the invention
The invention provides a kind of base unit and a kind of substrate-treating apparatus that uses described base unit.
The present invention also provides temperature gradient that a kind of base unit with pedestal of divergence type prevents that the imbalance by the shape of pedestal from causing and the substrate-treating apparatus that uses described base unit.
The present invention also provides a kind of even heat treated base unit that can realize substrate by the pedestal of disposing divergence type with vacuum adsorption method.
According to one exemplary embodiment, base unit comprises: pedestal, described pedestal is divided into main basal base, described main basal base has the lift span that vertically penetrates Base body through forming, with the subbase seat, described subbase seat inserts in the lift span and with the lift span engagement and forms coplanar surface with the upper face with main basal base, makes substrate be placed on main basal base and the subbase seat; And the substrate lifting unit, described substrate lifting unit is suitable for vacuum pick and moves up and down the subbase seat that separates with the center of pedestal.
According to another one exemplary embodiment, substrate-treating apparatus comprises: the chamber, and described chamber is suitable for supplying the reaction compartment that is used for handling substrate; The loading and unloading unit, it is suitable for substrate is moved into and shift out reaction compartment; Base unit, it is installed in the reaction compartment and lays thereon with the substrate that will be received from the loading and unloading unit; And heating unit, it is installed in the chamber and heats with the undercoat in being placed in reaction compartment, wherein base unit comprises: pedestal, described pedestal is divided into main basal base, described main basal base has the lift span that vertically penetrates Base body through forming, with the subbase seat, described subbase seat inserts in the lift span and with the lift span engagement and forms coplanar surface with the upper face with main basal base, makes substrate be placed on main basal base and the subbase seat; And the substrate lifting unit, it is suitable for vacuum pick and moves up and down the subbase seat that separates with the center of pedestal.
Description of drawings
Can understand one exemplary embodiment in more detail from following description in conjunction with the accompanying drawings, wherein:
Fig. 1 is the decomposition diagram according to the base unit of one exemplary embodiment.
Fig. 2 is the vertical cross-section diagram of the base unit of Fig. 1.
Fig. 3 is the vertical cross-section diagram of first revision of base unit.
Fig. 4 is the vertical cross-section diagram of second revision of base unit.
Fig. 5 is the mode of operation figure of base unit.
Fig. 6 is the schematic configuration diagram according to the substrate-treating apparatus of one exemplary embodiment.
Embodiment
To describe specific embodiment with reference to the accompanying drawings in detail hereinafter.Yet form that the present invention can be different embodies and the invention should not be deemed to be limited to the embodiment that this paper proposes.On the contrary, provide these embodiment so that the present invention will be comprehensive and complete, and will fully pass on scope of the present invention to the those skilled in the art.Identical Ref. No. runs through accompanying drawing and represents components identical.
Fig. 1 is the decomposition diagram according to the base unit of one exemplary embodiment.Fig. 2 is the vertical cross-section diagram of the base unit of Fig. 1.Fig. 3 is the vertical cross-section diagram of first revision of base unit.Fig. 4 is the vertical cross-section diagram of second revision of base unit.Fig. 5 is the mode of operation figure of base unit.
Referring to figs. 1 to Fig. 5, lay the pedestal 200 of substrate 1 above being included in according to the base unit 100 of one exemplary embodiment and be suitable for substrate 1 is moved to substrate lifting unit 300 on the pedestal 200.
The lower surface of substrate lifting unit 300 vacuum pick (vacuum-pick) subbase seat 220, and move up and down subbase seat 220 to the top of main basal base 210 part and from the top part of main basal base 210.Therefore, substrate lifting unit 300 drives the substrate 1 that is supported by subbase seat 220 up and down at part place, the top of pedestal 200.
As mentioned before, pedestal 200 is divided into main basal base 210 and subbase seat 220, and supplies a position of laying substrate 1.In the time of in main basal base 210 is fixed in lining processor 1000 (will describe in detail with Fig. 6), subbase seat 220 is placed in the lift span 212 that is formed at main basal base 210 places, and is driven up and down by substrate lifting unit 300.
The plate of the arbitrary shape of main basal base 210 in forming circle, ellipse, square and other polygon that has according to the shape of substrate 1.In the present embodiment, main basal base 210 has corresponding to the circular slab shape with round-shaped substrate 1.
Equally, subbase seat 220 can be cut into the arbitrary shape in circle, ellipse, square and other polygon from main basal base 210.In the present embodiment, subbase seat 220 has the minimized circular slab shape of the contact area that makes between main basal base 210 and the subbase seat 220.
According to one exemplary embodiment, go out subbase seat 220 from the heartcut of main basal base 210.Specifically, with the central point C of subbase seat 220
1(Fig. 2) the central point Cs with main basal base 220 is placed in same vertical line L
2On.Therefore, subbase seat 220 supports the center of the lower surface of the substrate 1 that contacts with subbase seat 220 surfaces.That is, although not supported in a plurality of positions, the lower surface of substrate 1 still can support with being stabilized.
Although not shown, embodiment can be changed so that form a plurality of subbase seats 220 from main basal base 210.In this case, independent substrate lifting unit driven element pedestal 220 about in the of 300.
Can form supporting side walls (support sidewall) 400 in addition along the circumference of the upper face of main basal base 210 and prevent that substrate 1 from escaping from the position of laying and improve the heat efficiency of substrate 1 during the heat treatment of substrate 1.Because the main basal base 210 of present embodiment has the circular slab shape, therefore supporting side walls 400 is formed annular.
As shown in Figure 2, around the height h of the supporting side walls 400 of the side surface of substrate 1
2Can be according to the thickness t of substrate 1
O 'And change.Although the height h of supporting side walls 400
2Can be less than the thickness t of substrate 1
O ', but can demonstrate be, the height h
2Be equal to or greater than thickness t
O 'To obtain the more stable support of side surface.
According to present embodiment, the thickness t of main basal base 210
1With the thickness of subbase seat 220 through forming identical in fact imbalance with the shape that prevents pedestal 200.Therefore, group pedestal 220 inserts the lift span 212 of main basal bases 210 and during with lift span 212 engagements, does not generate white space in lift span 212.Because main basal base 210 has identical in fact thickness t with subbase seat 220
1And t
2So group pedestal 220 is during fully with main basal base 210 engagements, the upper face formation coplanar surface L of the upper face of main basal base 210 and subbase seat 220
1
Main basal base 210 and subbase seat 220 can be made by identical materials.According to present embodiment, (silicon carbide, SiC) graphite of Tu Fuing or the pottery that contains SiC are made by graphite, carborundum for main basal base 210 and subbase seat 220.
When forming and thickness t by identical materials
1And t
2When identical main basal base 210 was engaged with each other with subbase seat 220, the pedestal 200 with separation-type structure during heating treatment can have the effect identical with integrated pedestal.Therefore, pedestal 200 is during heating treatment applied heat equably in the mode that runs through Zone Full, thereby forms uniform heat distribution.Therefore, not only be placed in substrate 1 on the pedestal 200 and applied radiant heat equably, and the heat between substrate 1 and the pedestal 200 shifts (transfer) and obtained effective realization from substrate-treating apparatus 1000.That is, can in the whole zone of substrate 1, carry out heat treatment equably.
The thickness t of substrate step 214
3Thickness t with support level 224
4Sum can equal the thickness t of main basal base 210 in fact
1Or the thickness t of subbase seat 220
2, shown in following equation (1).
t
3+ t
4=t
1Or t
3+ t
4=t
2... (1)
As long as satisfy the thickness t that equation (1) just can change base station rank 214
3Thickness t with support level 224
4
Exemplarily, support the thickness t of the substrate step 214 of this support level 224
3Be equal to or greater than the thickness t of this support level 224
4In the present embodiment, thickness t
3And t
4Equate, that is, equal the thickness t of main basal base 210
1Or the thickness t of subbase seat 220
2Half.
The outstanding length L of substrate step 214
3Equal the outstanding length L of support level 224 in fact
4Outstanding length L
3And L
4Be to calculate by following equation (2).
L
3＝L
4＝(D
h-D
o’)/2......(2)
Wherein, D
hThe diameter and the D of expression lift span 212
O 'The diameter of expression subbase seat 220.
When main basal base 210 and subbase seat 220 are configured to have identical thickness t
1And t
2, and simultaneously, substrate step 214 is configured to have identical outstanding length L with support level 224
3And L
4The time, the white space of lift span 212 is filled up by substrate step 214 and support level 224, because main basal base 210 is overlapping with subbase seat 220.In other words, do not generate white space in the pedestal 200.
According to first revision as shown in Figure 3, a plurality of dimples (recess) 218 and 228 can be formed on the upper face (more particularly, being respectively the upper face of main basal base 210a and the upper face of subbase seat 220a) of pedestal 200a.In this case, the substrate 1 that is in the position of laying and the contact area between the pedestal 200a are minimized, and then tight contact the between constraint substrate 1 and the pedestal 200a.In addition, 1 heat shifts and can adjust by the size of adjusting dimple 218 and 228 from pedestal 200a to substrate.
Here, dimple 218 and 228 can form by blasting treatment (sand blasting) or bead (shot peening).
According to second revision of as shown in Figure 4 embodiment, main basal base 210 can further be divided into fixed pedestal (fixed susceptor) 240 and separate pedestal (divided susceptor) 250.Fixed pedestal 240 is supplied a position to be placed on the upper face of supporting side walls 400 along excircle for supporting side walls 400.What fixed pedestal 240 comprised the center that vertically penetrates Base body blocks hole (cutout hole) 242.Separate pedestal 250 and comprise lift span 252, subbase seat 220 be inserted in the lift span 252 and with its engagement.Separate pedestal 250 insert block in the hole 242 and with block hole 242 engagements and form coplanar surface L with upper face with fixed pedestal 240
1When pedestal 200b is divided into three parts or more parts like this, subbase seat 220 or with subbase seat 220 overlapping separate pedestal 250 can according to the size that is placed in the substrate 1 on the pedestal 200b or move up and down substrate 1 substrate lifting unit 300 size and driven up and down.
According to second revision, main basal base 210 is divided into a fixed pedestal 240 and separates pedestal 250 with one.Yet, being not limited to this, main basal base 210 can be divided into two or more separation pedestals.
To be illustrated in the substrate lifting unit 300 of mover pedestal 200 and 220a among pedestal 200,200a and the 200b according to one exemplary embodiment, first revision and second revision originally hereinafter.
The diameter D of absorbing rod 310
a(Fig. 2) less than the diameter D of subbase seat 220
O 'Therefore, shown in Fig. 5 B, when absorbing rod 310 moves up and support the lower surface of subbase seat 220, the complete covering vacuum pick-up 312 of the lower surface of subbase seat 220.
When the lower surface of the upper end contact shoe pedestal 220 of absorbing rod 310, drive this pump unit 330 in absorbing rod 310, to form vacuum P
2, make subbase seat 220 be attached to absorbing rod 310.Although (not shown, can further provide a contact pickup or position transducer with sensing absorbing rod 310 upper end and the contact condition between the subbase seat 220.)
Then, shown in Fig. 5 (d), when substrate 1 was placed on the subbase seat 220, excellent lift unit 320 moved down absorbing rod 320.In the time will being placed on the pedestal 200 by the substrate 1 that subbase seat 220 moves, pump unit 330 with the internal pressure of absorbing rod 330 from vacuum P
2Become atmospheric pressure P
1Therefore, absorbing rod 310 separates (Fig. 5 (e)) with subbase seat 220.Here, owing to being applied in downward power, subbase seat 220 becomes atmospheric pressure P up to the internal pressure of absorbing rod 310
1Till, so subbase seat 220 spontaneously inserts in the main basal base 210 and is overlapping with main basal base 210.
To and revise embodiment and explain the substrate-treating apparatus that comprises base unit according to one exemplary embodiment hereinafter.
In below describing, rapid thermal treatment (RTP) equipment is through being illustrated as the example of substrate-treating apparatus.Yet, be not limited to this, embodiment can be applied to various other substrate-treating apparatus of for example vapour deposition (vapor-deposition) equipment, etching (etching) equipment and ashing (ashing) equipment etc.
Equally, can use all base units according to the substrate-treating apparatus of one exemplary embodiment according to one exemplary embodiment, first revision and second revision.Therefore, will only explain or no longer explain the element of having explained simply.
Fig. 6 is the schematic configuration diagram according to the substrate-treating apparatus of one exemplary embodiment.
With reference to figure 6, lining processor 1000 comprises: chamber (chamber) 1100, the reaction compartment S that its supply can be heat-treated substrate 1, be suitable for substrate 1 move into or shift out reaction compartment S loading and unloading unit 1200, be installed among the reaction compartment S base unit 100 being laid from the substrate 1 that loading and unloading unit 1200 is received, and be installed on the heating unit 1300 so that the substrate 1 that is placed among the reaction compartment S is heated in the chamber 1100.
The gate (gate) 1110 that is used for the passage of substrate 1 is through being formed at a side place of the chamber 1100 that is connected with loading and unloading unit 1200.In addition, be installed on heating unit 1300 in the chamber 1100 and comprise a plurality of lamps 1310 as thermal source.Radiation R emits to substrate 1 from lamp 1310.
To the fixed-site of the main basal base 210 that substrate-treating apparatus 1000 provides in reaction compartment S.In addition, can provide support sidewall 400 along the circumference of the upper face of main basal base 210 and prevent that substrate 1 from escaping and improve the heat efficiency of substrate 1.The position of main basal base 210 can be fixed among the reaction compartment S by the strutting piece (not shown) on the lower inner surface that vertically is installed on chamber 110 or by the prodger (not shown) on the side surface that is formed at chamber 1100.
Main basal base 210 and subbase seat 220 are through forming identical in fact thickness.When main basal base 210 and subbase seat 220 overlapped each other, the upper face of the upper face of main basal base 210 and subbase seat 220 formed coplanar surface.In addition, the lift span 212 (Fig. 1) of main basal base 210 is filled up by subbase seat 220, thereby does not stay white space in pedestal 200.
More particularly, subbase seat 220 is by inserting in the lift span 212 and overlapping with the lift span 212 of main basal base 210.According to present embodiment, substrate step 214 (Fig. 2) is outstanding from the bottom inner periphery of lift span 212, and support level 224 is inwardly outstanding from the top excircle of subbase seat 220.Because subbase seat 220 is inserted in the lift span 212, so that the lower surface of support level 224 contact with the upper face of substrate step 214.
Described a plurality of dimple 218 and 228 (Fig. 3) can be formed on the upper face of the upper face of main basal base 210 and subbase seat 220.
As shown in Figure 4, main basal base 210 can further be divided into fixed pedestal 240 and separate pedestal 250.
According to the base unit of the foregoing description with have the substrate-treating apparatus of described base unit, the part support substrates of divergence type pedestal but pedestal has isolating construction, and then prevent the damaged surfaces of for example push rod vestige (pin mark) etc. of substrate.
In addition, the part that substrate can be by the pedestal disposed by the vacuum suction method and stably being placed on the pedestal.Especially, owing to the center of pedestal is to contact with substrate surface supporting substrate, so although not supported in a plurality of positions, substrate still can move up and down with being stabilized.
Because the divergence type pedestal does not generate white space, so during heating treatment can prevent the generation of the temperature gradient of pedestal.
Therefore, can carry out heat treatment equably to the whole zone of substrate.Therefore, the quality and the output of substrate have been improved.Therefore, improved the productivity ratio of substrate processing.
By with the upper face of the lower surface substrate contacted that is placed in the substrate on the pedestal on form a plurality of dimples, but tight contact the between release liners and the pedestal then.
Therefore, after heat treatment, can be with substrate and base-separation under the situation of damage that does not cause substrate or distortion.That is, can reduce or prevent defective substrate.
Although described base unit and substrate-treating apparatus with reference to specific embodiment, it is not limited to this.Therefore, the those skilled in the art can easily recognize, under situation about not breaking away from by the spirit and scope of the present invention that claims defined of enclosing, can carry out various modifications and change to it.
Claims (18)
1. base unit, it comprises:
Pedestal, it comprises main basal base, described main basal base has the lift span that vertically penetrates Base body through forming, and subbase seat, described subbase seat inserts in the described lift span and with described lift span engagement and forms coplanar surface with the upper face with described main basal base, and wherein substrate is placed on described main basal base and the described subbase seat; And
The substrate lifting unit, it is suitable for vacuum pick and moves up and down the described subbase seat that separates with the center of described pedestal.
2. base unit according to claim 1 is characterized in that, described main basal base comprises that the supporting side walls that forms along the circumference of the described upper face of described main basal base is to prevent the escape of described substrate.
3. base unit according to claim 1 is characterized in that, described main basal base and described subbase seat have identical in fact thickness.
4. base unit according to claim 1 is characterized in that, a plurality of dimples are formed on the upper face of the described upper face of described main basal base and described subbase seat.
5. according to the described base unit of arbitrary claim in the claim 1 to 4, it is characterized in that,
Described main basal base comprises the substrate step of giving prominence to from the bottom inner periphery of described lift span, and
Described subbase seat comprises that itself and described lift span mesh and be placed on the described substrate step from the inwardly outstanding support level of the top excircle of described subbase seat.
6. base unit according to claim 5 is characterized in that the thickness sum of the thickness of described substrate step and described support level equals the thickness of described main basal base or described subbase seat in fact.
7. base unit according to claim 5, it is characterized in that the diameter of described lift span equals outstanding length sum or the described diameter of described subbase seat and the outstanding length sum of described support level of the diameter and the described substrate step of described subbase seat in fact.
8. base unit according to claim 1 and 2 is characterized in that, described main basal base is divided into: fixed pedestal, and described fixed pedestal is through forming the hole of blocking with center of vertically penetrating described Base body; And the separation pedestal, described separation pedestal describedly blocks in the hole and blocks the hole engagement and form coplanar surface with the upper face with described fixed pedestal with described through forming to have described lift span and insert.
9. base unit according to claim 8 is characterized in that, described substrate lifting unit vacuum pick and move up and down the described pedestal that separates that separates with the described center of described pedestal.
10. according to the described base unit of arbitrary claim in the claim 1 to 4, it is characterized in that any one in the group that described main basal base and described subbase seat are made up of the pottery of graphite that is selected from graphite, silicon carbide coating or silicon carbide-containing made.
11., it is characterized in that described substrate lifting unit comprises according to claim 1 described base unit of arbitrary claim to the claim 4:
Absorbing rod, wherein the vacuum pick device is opened to the lower surface of described subbase seat or described separation pedestal;
The rod lift unit, it is suitable for driving up and down described absorbing rod; And
The pump unit, it is suitable for adjusting the internal pressure of described absorbing rod.
12. base unit according to claim 11 is characterized in that, described absorbing rod comprises the pressure sealing component that is formed at the upper end place.
13. a substrate-treating apparatus, it comprises:
The chamber, it is suitable for supplying the reaction compartment that is used for handling substrate;
The loading and unloading unit, it is suitable for described substrate is moved into and shift out described reaction compartment;
Base unit, it is installed in the described reaction compartment so that the described substrate that is received from described loading and unloading unit is laid thereon; And
Heating unit, it is installed in the described chamber and heats with the described undercoat in being placed in described reaction compartment,
It is characterized in that, described base unit comprises pedestal, described pedestal comprises: main basal base, described main basal base has the lift span that vertically penetrates Base body through forming, and subbase seat, described subbase seat inserts in the described lift span and with described lift span engagement and forms coplanar surface with the upper face with described main basal base, makes substrate be placed on described main basal base and the described subbase seat; And the substrate lifting unit, it is suitable for vacuum pick and moves up and down the described subbase seat that separates with the center of described pedestal.
14. substrate-treating apparatus according to claim 13, it is characterized in that, described main basal base is placed in the described reaction compartment regularly, and comprise along the circumference of the described upper face of described main basal base and the supporting side walls that forms to prevent the escape of described substrate.
15. substrate-treating apparatus according to claim 13 is characterized in that, described main basal base and described subbase seat have identical in fact thickness.
16. substrate-treating apparatus according to claim 13 is characterized in that, a plurality of dimples are formed on the upper face of the described upper face of described main basal base and described subbase seat.
17. substrate-treating apparatus according to claim 13 is characterized in that, described main basal base is divided into: fixed pedestal, and described fixed pedestal is through forming the hole of blocking with center of vertically penetrating described Base body; And the separation pedestal, described separation pedestal describedly blocks in the hole and blocks the hole engagement and form coplanar surface with the upper face with described fixed pedestal with described through forming to have described lift span and insert.
18. substrate-treating apparatus according to claim 13 is characterized in that, described substrate lifting unit comprises:
Absorbing rod, wherein the vacuum pick device is opened to the lower surface of described subbase seat or described separation pedestal;
The rod lift unit, it is suitable for driving up and down described absorbing rod; And
The pump unit, it is suitable for adjusting the internal pressure of described absorbing rod.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2009-0102380 | 2009-10-27 | ||
| KR1020090102380A KR100965143B1 (en) | 2009-10-27 | 2009-10-27 | Susceptor unit and apparatus for processing a substrate using it |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102082109A true CN102082109A (en) | 2011-06-01 |
| CN102082109B CN102082109B (en) | 2013-11-13 |
Family
ID=42370297
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010105286736A Active CN102082109B (en) | 2009-10-27 | 2010-10-26 | Susceptor unit and apparatus for processing substrate by using the susceptor unit |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR100965143B1 (en) |
| CN (1) | CN102082109B (en) |
| TW (1) | TWI442510B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108346613A (en) * | 2017-01-25 | 2018-07-31 | 上海新昇半导体科技有限公司 | Separate type base assembly suitable for one chip epitaxial furnace |
| CN108461442A (en) * | 2018-03-27 | 2018-08-28 | 武汉华星光电技术有限公司 | Bogey for bearing substrate and the heat annealing equipment with the bogey |
| CN109037136A (en) * | 2017-06-12 | 2018-12-18 | 上海新昇半导体科技有限公司 | The method of the thimble trace of supporting table, improvement wafer or epitaxial growth crystal column surface |
| CN109841544A (en) * | 2017-11-29 | 2019-06-04 | Tes股份有限公司 | The moving method and substrate board treatment of ejector pin unit |
| CN113539914A (en) * | 2021-06-28 | 2021-10-22 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment and wafer transmission system thereof |
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| KR101900547B1 (en) * | 2016-03-07 | 2018-09-19 | 주식회사 케이씨씨 | Loading system for producing ceramic substrate and method of producing ceramic board using thereof |
| KR101992379B1 (en) | 2018-12-05 | 2019-06-25 | (주)앤피에스 | Apparatus for processing substrate and method for processing substrate |
| EP4104208A4 (en) * | 2020-02-13 | 2024-04-10 | Jabil Inc | Apparatus, system and method for providing a substrate chuck |
| US11581213B2 (en) | 2020-09-23 | 2023-02-14 | Applied Materials, Inc. | Susceptor wafer chucks for bowed wafers |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108346613A (en) * | 2017-01-25 | 2018-07-31 | 上海新昇半导体科技有限公司 | Separate type base assembly suitable for one chip epitaxial furnace |
| CN109037136A (en) * | 2017-06-12 | 2018-12-18 | 上海新昇半导体科技有限公司 | The method of the thimble trace of supporting table, improvement wafer or epitaxial growth crystal column surface |
| CN109037136B (en) * | 2017-06-12 | 2021-10-26 | 上海新昇半导体科技有限公司 | Supporting table and method for improving thimble marks on surface of wafer or epitaxial wafer |
| CN109841544A (en) * | 2017-11-29 | 2019-06-04 | Tes股份有限公司 | The moving method and substrate board treatment of ejector pin unit |
| CN108461442A (en) * | 2018-03-27 | 2018-08-28 | 武汉华星光电技术有限公司 | Bogey for bearing substrate and the heat annealing equipment with the bogey |
| CN113539914A (en) * | 2021-06-28 | 2021-10-22 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment and wafer transmission system thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102082109B (en) | 2013-11-13 |
| KR100965143B1 (en) | 2010-06-25 |
| TWI442510B (en) | 2014-06-21 |
| TW201120986A (en) | 2011-06-16 |
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